CN107516706A - 一种防硫化和卤化且具有抗氧化功能的led光源 - Google Patents

一种防硫化和卤化且具有抗氧化功能的led光源 Download PDF

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CN107516706A
CN107516706A CN201610432955.3A CN201610432955A CN107516706A CN 107516706 A CN107516706 A CN 107516706A CN 201610432955 A CN201610432955 A CN 201610432955A CN 107516706 A CN107516706 A CN 107516706A
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led
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support
chip
light source
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CN107516706B (zh
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李俊东
刘云
张明武
李绍军
柳欢
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SHENZHEN SMALITE OPTO-ELECTRONIC Co Ltd
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SHENZHEN SMALITE OPTO-ELECTRONIC Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0058Processes relating to semiconductor body packages relating to optical field-shaping elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0066Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

本发明公开了一种防硫化和卤化且具有抗氧化功能的LED光源,它属于LED灯技术领域;基材(1)的上方通过第一支架填充胶材(a)和支架填充胶材(b)的融合与LED支架(2)固定连接,LED支架(2)上安装芯片(4),芯片(4)上焊接有金线(5),芯片(4)和金线(5)的上方封装有荧光胶(3)。通过一些特殊工艺在基材上沉积(或蒸镀)金属化合物(氧化铝及氧化钛或氧化硅及氧化钛),保护基材不被硫化,溴化,氧化等,提高基材反射率和光泽度。LED支架2通过防渗漏,T型及倒T型避空设计,提高产品气密性,同时有效避免基材受到压伤,拉伸等损坏。LED半成品经过灌胶封装工艺,可做成不同颜色LED光源灯珠。

Description

一种防硫化和卤化且具有抗氧化功能的LED光源
技术领域
本发明涉及一种防硫化和卤化且具有抗氧化功能的LED光源,属于LED灯技术领域。
背景技术
LED自从问世以上,受到广泛重视而得到迅速发展,是与它本身所具有的优点分不开的。这些优点概括起来是:亮度高、工作电压低、功耗小、小型化、寿命长、耐冲击和性能稳定。LED的发展前景极为广阔,目前正朝着更高亮度、更高耐气候性、更高的发光密度、更高的发光均匀性方向发展。
但实际在生产使用LED产品的过程中,我们经常会遭遇“产品硫化(包含硫化、卤化、氧化等污染现象)导致产品失效”等问题,这些问题给客户和生产厂家都带来一定损失,出现硫化反应后,产品功能区会黑化,光通量会逐渐下降,色温出现明显漂移。其原理是:因为贴片LED的支架是在金属基材上镀银(银层会起到发亮,反射光的作用), LED在高温焊接时,碰到了硫或硫蒸气,则会造成支架上的银层与硫发生化学反应Ag+2S=Ag2S↓,形成Ag2S,视反应量的多少,其颜色为黄色或黑色不等。最严重的银层都反应完,金丝断裂,造成LED开路。
发明内容
针对上述问题,本发明要解决的技术问题是提供一种防硫化和卤化且具有抗氧化功能的LED光源。
本发明防硫化和卤化且具有抗氧化功能的LED光源。它包含基材1、第一支架填充胶材a、LED支架2、支架填充胶材b、荧光胶3、芯片4和金线5, 基材1的上方通过基材填充胶材a和支架填充胶材b的融合与LED支架2固定连接,LED支架2上安装芯片4, 芯片4上焊接有金线5, 芯片4和金线5的上方封装有荧光胶3。
作为优选,所述的LED支架2中部上方为避空设计,底部为蘑菇头及倒T型设计,两侧为支架填充胶材b。
本发明的有益效果:通过一些特殊工艺在基材上沉积(或蒸镀)金属化合物氧化铝和氧化钛(或氧化硅和氧化钛),保护基材不被硫化,溴化,氧化等,提高基材反射率和光泽度。LED支架通过防渗漏,T型及倒T型避空设计,提高产品气密性,同时有效避免基材受到压伤,拉伸等损坏。LED半成品经过灌胶封装工艺,可做成不同颜色LED光源灯珠。
附图说明:
为了易于说明,本发明由下述的具体实施及附图作以详细描述。
图1为本发明结构示意图;
图2为本发明中基材的结构示意图;
图3为本发明中LED支架的结构示意图;
图4为图3的左视结构示意图;
图5为本发明中LED半成品的结构示意图;
图6为本发明中基材与基材填充胶材的连接结构示意图。
具体实施方式:
具体实施方式一:如图1-6所示,本具体实施方式采用以下技术方案:它包含基材1、第一支架填充胶材a、LED支架2、支架填充胶材b、荧光胶3、芯片4和金线5, 基材1的上方通过基材填充胶材a和支架填充胶材b的融合与LED支架2固定连接,LED支架2上安装芯片4, 芯片4上焊接有金线5, 芯片4和金线5的上方封装有荧光胶3。
作为优选,所述的LED支架2中部上方为避空设计,底部为蘑菇头及倒T型设计,两侧为支架填充胶材b。
本具体方式的制作工艺为:它的制作工艺为:步骤一、对基材1进行工艺处理:把一定比例的氧化铝及氧化钛按从下到上顺序沉积在基材1的上表面,把一定比例银(也可是铜或镍或锡或金)沉积在基材1的下表面,制作成所需的LED基板,所述的基材1为多种金属和金属化合物同时存在;步骤二、LED支架2的制作:用热固或热塑成型LED支架2,且LED支架2做防渗漏、蘑菇头及倒T型和避空处理;步骤三、在LED支架2上固正装芯片4,然后进行焊金线5,封装完成LED正装半成品;步骤四、LED半成品经过灌封荧光胶6等封装工艺,做成所需求不同颜色的LED光源灯珠。
具体实施方式二:本具体实施方式与具体实施方式一的不同之处在于:所述的基材1的处理工艺不同,基材1的处理方法为:把一定比例的氧化硅及氧化钛按从下到上顺序沉积在基材1的上表面,把一定比例银(也可是铜或镍或锡或金)沉积基材1的下表面,制作成所需LED基板,其他工艺与具体实施方式一相同。
以上显示和描述了本发明的基本原理和主要特征和本发明的优点。本行业的技术人员应该了解,本发明不受上述实施例的限制,上述实施例和说明书中描述的只是说明本发明的原理,在不脱离本发明精神和范围的前提下,本发明还会有各种变化和改进,这些变化和改进都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其等效物界定。

Claims (3)

1.一种防硫化和卤化且具有抗氧化功能的LED光源,其特征在于:它包含基材(1)、第一支架填充胶材(a)、LED支架(2)、支架填充胶材(b)、荧光胶(3)、芯片(4)和金线(5), 基材(1)的上方通过第一支架填充胶材(a)和支架填充胶材(b)的融合与LED支架(2)固定连接,LED支架(2)上安装芯片(4), 芯片(4)上焊接有金线(5), 芯片(4)和金线(5)的上方封装有荧光胶(3),所述的LED支架(2)中部上方为避空设计,底部为蘑菇头及倒T型设计,两侧为支架填充胶材(b)。
2.根据权利要求1所述的一种防硫化和卤化且具有抗氧化功能的LED光源,其特征在于:它的制作工艺为:步骤一、对基材(1)进行工艺处理:把一定比例的氧化铝及氧化钛按从下到上顺序沉积在基材(1)的上表面,把一定比例银或铜或镍或锡或金沉积在基材(1)的下表面,制作成所需的LED基板,所述的基材(1)为多种金属和金属化合物同时存在;步骤二、LED支架(2)的制作:用热固或热塑成型LED支架(2),且LED支架(2)做防渗漏、蘑菇头及倒T型和避空处理;步骤三、在LED支架(2)上固正装芯片(4),然后进行焊金线(5),封装完成LED正装半成品;步骤四、LED半成品经过灌封荧光胶(6)等封装工艺,做成所需求不同颜色的LED光源灯珠。
3.根据权利要求1所述的一种防硫化和卤化且具有抗氧化功能的LED光源,其特征在于:所述的基材(1)的处理工艺不同,基材(1)的处理方法为:把一定比例的氧化硅及氧化钛按从下到上顺序沉积在基材(1)的上表面,把一定比例银或铜或镍或锡或金沉积基材(1)的下表面,制作成所需LED基板。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110864233A (zh) * 2019-11-25 2020-03-06 广东鑫特美科技有限公司 一种led灯珠

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110014734A1 (en) * 2009-07-20 2011-01-20 Lu Lien-Shine Method for fabricating flip chip gallium nitride light emitting diode
CN202267007U (zh) * 2011-10-11 2012-06-06 湖北云川光电科技有限公司 一种led日光灯cob光源
CN205723614U (zh) * 2016-06-17 2016-11-23 深圳市斯迈得半导体有限公司 一种防硫化和卤化且具有抗氧化功能的led光源

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110014734A1 (en) * 2009-07-20 2011-01-20 Lu Lien-Shine Method for fabricating flip chip gallium nitride light emitting diode
CN202267007U (zh) * 2011-10-11 2012-06-06 湖北云川光电科技有限公司 一种led日光灯cob光源
CN205723614U (zh) * 2016-06-17 2016-11-23 深圳市斯迈得半导体有限公司 一种防硫化和卤化且具有抗氧化功能的led光源

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110864233A (zh) * 2019-11-25 2020-03-06 广东鑫特美科技有限公司 一种led灯珠

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