CN107046026A - 一种防硫化和卤化且具有抗氧化功能的led光源 - Google Patents

一种防硫化和卤化且具有抗氧化功能的led光源 Download PDF

Info

Publication number
CN107046026A
CN107046026A CN201610080260.3A CN201610080260A CN107046026A CN 107046026 A CN107046026 A CN 107046026A CN 201610080260 A CN201610080260 A CN 201610080260A CN 107046026 A CN107046026 A CN 107046026A
Authority
CN
China
Prior art keywords
led
metal substrate
light source
vulcanization
silver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610080260.3A
Other languages
English (en)
Inventor
李俊东
刘云
李绍军
袁国平
曹丽华
张路华
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SHENZHEN SMALITE OPTO-ELECTRONIC Co Ltd
Original Assignee
SHENZHEN SMALITE OPTO-ELECTRONIC Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SHENZHEN SMALITE OPTO-ELECTRONIC Co Ltd filed Critical SHENZHEN SMALITE OPTO-ELECTRONIC Co Ltd
Priority to CN201610080260.3A priority Critical patent/CN107046026A/zh
Publication of CN107046026A publication Critical patent/CN107046026A/zh
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

本发明公开了一种防硫化和卤化且具有抗氧化功能的LED光源,它涉及LED光源技术领域。制作方法为:通过一些特殊工艺在金属基材上蒸镀金属或金属化合物形成金属基板,用模具冲压金属基板,做出相应图形;用注塑方式,把胶材,金属基板冲压出相应图形、结构;在产品支架安装LED灯后进行固晶,焊线工艺,封装完成LED半成品;LED半成品经过封装胶进行灌胶封装工艺,做成所需求不同颜色LED灯珠。基材选取灵活,可根据产品性能需求选取,支架加工工艺简单,可直接冲压注塑成型,不需电镀,在金属基板表面进行适当处理,可有效果防止硫化,卤化,氧化等污染,故光源可以在更高温度,更恶劣环境之下使用,进一步提高产品自身性能。

Description

一种防硫化和卤化且具有抗氧化功能的LED光源
技术领域
本发明涉及一种防硫化和卤化且具有抗氧化功能的LED光源,属于LED光源技术领域。
背景技术
LED自从问世以上,受到广泛重视而得到迅速发展,是与它本身所具有的优点分不开的。这些优点概括起来是:亮度高、工作电压低、功耗小、小型化、寿命长、耐冲击和性能稳定。LED的发展前景极为广阔,目前正朝着更高亮度、更高耐气候性、更高的发光密度、更高的发光均匀性方向发展。
但实际在生产使用LED产品的过程中,我们经常会遭遇“产品硫化(包含硫化、卤化、氧化等污染现象)导致产品失效”等问题,这些问题给客户和生产厂家都带来一定损失,出现硫化反应后,产品功能区会黑化,光通量会逐渐下降,色温出现明显漂移。其原理是:因为贴片LED的支架是在铜的基材上镀银(银层会起到发亮,反射光的作用),TOP LED在高温焊接时,碰到了硫或硫蒸气,则会造成支架上的银层与硫发生化学反应Ag+S=AgS↓,形成AgS ,视反应量的多少,其颜色为黄色或黑色不等。最严重的银层都反应完,金丝断裂,造成LED开路。可以说,封装厂商几乎是谈硫化色变。
发明内容
针对上述问题,本发明要解决的技术问题是提供一种防硫化和卤化且具有抗氧化功能的LED光源。
本发明防硫化和卤化且具有抗氧化功能的LED光源,它包含金属基板1、产品支架2、LED灯3、焊线4和封装胶5,产品支架2内部安装有金属基板1,且金属基板1上设置有LED灯3,相互的两个LED灯3之间通过焊线4连接,产品支架2内部和LED灯3上方采用封装胶5封装。
它的具体的制作方法为:a、通过一些特殊工艺在金属基材上蒸镀金属或金属化合物形成金属基板,用模具冲压金属基板1,做出相应图形;
b、用注塑方式,把胶材,金属基板冲压出相应图形、结构;
c、在产品支架2安装LED灯后进行固晶,焊线工艺,封装完成LED半成品;
d、LED半成品经过封装胶5进行灌胶封装工艺,做成所需求不同颜色LED灯珠。
作为优选,所述的金属基板1的具体制作方法为将一定比例成份的氧化铝、银、氧化铝、氧化钛按顺序沉积在铝基板上表面,然后在分别把一定比例铜、银按顺序沉积在铝基板下表面,制作而成。
本发明的有益效果:1、基材选取灵活,可根据产品性能需求选取,铜,铝,铁等金属均可,通过物理方法金属表面沉积另外一层金属或金属化合物,根据需求,可以选择性沉积,如:银可以提高基板反射率;氧化铝可以保护金属表面光泽度,防止硫化,提高反光率;氧化钛保持表面光泽度,保护表面不被硫化,卤化,氧化等污染;底部铜有助于基板上锡,底部银可以保护金属基板不被污染,提高上锡吃锡效果。
2、支架加工工艺简单,可直接冲压注塑成型,不需电镀,化学药水等一系列复杂工艺。
3、在金属基板表面进行适当处理,可有效果防止硫化,卤化,氧化等污染,故光源可以在更高温度,更恶劣环境之下使用,进一步提高产品自身性能。
4、通过对基板表面处理,可以实现一些看似非常难以实现工艺,如:在主体金属铝,铜,铁等基板上表面打线,底部焊锡;实现等同常规贴片产品生产使用。
附图说明:
为了易于说明,本发明由下述的具体实施及附图作以详细描述。
图1为本发明结构示意图;
图2为本发明中冲压后的金属基板的结构示意图;
图3为本发明中产品支架的结构示意图;
图4为本发明未封装封装胶的状态结构示意图;
图5为本发明中未冲压的金属基板的结构示意图。
具体实施方式:
具体实施方式一:如图1-5所示,本具体实施方式采用以下技术方案:它包含金属基板1、产品支架2、LED灯3、焊线4和封装胶5,产品支架2内部安装有金属基板1,且金属基板1上设置有LED灯3,相互的两个LED灯3之间通过焊线4连接,产品支架2内部和LED灯3上方采用封装胶5封装。
它的具体的制作方法为:a、通过一些特殊工艺在金属基材上蒸镀金属或金属化合物形成金属基板,用模具冲压金属基板1,做出相应图形;
b、用注塑方式,把胶材,金属基板冲压出相应图形、结构;
c、在产品支架2安装LED灯后进行固晶,焊线工艺,封装完成LED半成品;
d、LED半成品经过封装胶5进行灌胶封装工艺,做成所需求不同颜色LED灯珠。
作为优选,所述的金属基板1的具体制作方法为将一定比例成份的氧化铝、银、氧化铝、氧化钛按顺序沉积在铝基板上表面,然后在分别把一定比例铜、银按顺序沉积在铝基板下表面,制作所需的金属基板。
具体实施方式二:本具体实施方式与具体实施方式的不同之处在于所述的金属基板1的具体制作方法不同,它的制作方法为:把一定比例成份的氧化铝、银、氧化铝、氧化钛按顺序沉积在铜基板上表面,把一定比例银沉积在铜基板下表面,制作所需的金属基板,其他组成和连接方式与具体实施方式一相同。
具体实施方式三:本具体实施方式与具体实施方式的不同之处在于所述的金属基板1的具体制作方法不同,它的制作方法为:把一定比例成份银、氧化铝、氧化钛按顺序沉积在铜基板上表面,把一定比例银沉积在铜基板下表面,制作所需的金属基板,其他组成和连接方式与具体实施方式一相同。
具体实施方式四:本具体实施方式与具体实施方式的不同之处在于所述的金属基板1的具体制作方法不同,它的制作方法为:把一定比例成份氧化铝,银、氧化铝、氧化钛按顺序沉积在铜基板上表面,把一定比例铜,银按顺序沉积在铁基板下表面,制作所需的金属基板,其他组成和连接方式与具体实施方式一相同。
以上显示和描述了本发明的基本原理和主要特征和本发明的优点。本行业的技术人员应该了解,本发明不受上述实施例的限制,上述实施例和说明书中描述的只是说明本发明的原理,在不脱离本发明精神和范围的前提下,本发明还会有各种变化和改进,这些变化和改进都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其等效物界定。

Claims (6)

1.一种防硫化和卤化且具有抗氧化功能的LED光源,其特征在于:它包含金属基板(1)、产品支架(2)、LED灯(3)、焊线(4)和封装胶(5),产品支架(2)内部安装有金属基板(1),且金属基板(1)上设置有LED灯(3),相互的两个LED灯(3)之间通过焊线(4)连接,产品支架(2)内部和LED灯(3)上方采用封装胶(5)封装。
2.按照权利要求1所述的一种防硫化和卤化且具有抗氧化功能的LED光源,其特征在于:它的具体的制作方法为:(a)、通过一些特殊工艺在金属基材上蒸镀金属或金属化合物形成金属基板,用模具冲压金属基板(1),做出相应图形;
(b)、用注塑方式,把胶材,金属基板冲压出相应图形、结构;
(c)、在产品支架(2)安装LED灯后进行固晶,焊线工艺,封装完成LED半成品;
(d)、LED半成品经过封装胶(5)进行灌胶封装工艺,做成所需求不同颜色LED灯珠。
3.按照权利要求1所述的一种防硫化和卤化且具有抗氧化功能的LED光源,其特征在于:所述的金属基板(1)的具体制作方法为:将一定比例成份的氧化铝、银、氧化铝、氧化钛按顺序沉积在铝基板上表面,然后在分别把一定比例铜、银按顺序沉积在铝基板下表面,制作而成。
4.按照权利要求1所述的一种防硫化和卤化且具有抗氧化功能的LED光源,其特征在于:所述的金属基板(1) 具体制作方法为:把一定比例成份的氧化铝、银、氧化铝、氧化钛按顺序沉积在铜基板上表面,把一定比例银沉积在铜基板下表面,制作所需的金属基板。
5.按照权利要求1所述的一种防硫化和卤化且具有抗氧化功能的LED光源,其特征在于:所述的金属基板(1) 具体制作方法为:把一定比例成份银、氧化铝、氧化钛按顺序沉积在铜基板上表面,把一定比例银沉积在铜基板下表面,制作所需的金属基板。
6.按照权利要求1所述的一种防硫化和卤化且具有抗氧化功能的LED光源,其特征在于:所述的金属基板(1) 具体制作方法为:把一定比例成份氧化铝,银、氧化铝、氧化钛按顺序沉积在铜基板上表面,把一定比例铜,银按顺序沉积在铁基板下表面,制作所需的金属基板。
CN201610080260.3A 2016-02-05 2016-02-05 一种防硫化和卤化且具有抗氧化功能的led光源 Pending CN107046026A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610080260.3A CN107046026A (zh) 2016-02-05 2016-02-05 一种防硫化和卤化且具有抗氧化功能的led光源

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610080260.3A CN107046026A (zh) 2016-02-05 2016-02-05 一种防硫化和卤化且具有抗氧化功能的led光源

Publications (1)

Publication Number Publication Date
CN107046026A true CN107046026A (zh) 2017-08-15

Family

ID=59542636

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610080260.3A Pending CN107046026A (zh) 2016-02-05 2016-02-05 一种防硫化和卤化且具有抗氧化功能的led光源

Country Status (1)

Country Link
CN (1) CN107046026A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111403571A (zh) * 2019-12-24 2020-07-10 宁波凯耀电器制造有限公司 一种防硫化抗高温提高led光维的led支架及工艺方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110266570A1 (en) * 2010-04-28 2011-11-03 Advanced Optoelectronic Technology, Inc. Light emitting diode package and manufacturing method thereof
CN102646774A (zh) * 2011-02-18 2012-08-22 奇力光电科技股份有限公司 发光二极管元件及其制作方法
CN204045622U (zh) * 2014-08-25 2014-12-24 深圳市天电光电科技有限公司 Led 封装器件
CN205723624U (zh) * 2016-02-05 2016-11-23 深圳市斯迈得半导体有限公司 一种防硫化和卤化且具有抗氧化功能的led光源

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110266570A1 (en) * 2010-04-28 2011-11-03 Advanced Optoelectronic Technology, Inc. Light emitting diode package and manufacturing method thereof
CN102646774A (zh) * 2011-02-18 2012-08-22 奇力光电科技股份有限公司 发光二极管元件及其制作方法
CN204045622U (zh) * 2014-08-25 2014-12-24 深圳市天电光电科技有限公司 Led 封装器件
CN205723624U (zh) * 2016-02-05 2016-11-23 深圳市斯迈得半导体有限公司 一种防硫化和卤化且具有抗氧化功能的led光源

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111403571A (zh) * 2019-12-24 2020-07-10 宁波凯耀电器制造有限公司 一种防硫化抗高温提高led光维的led支架及工艺方法

Similar Documents

Publication Publication Date Title
CN104393154A (zh) 一种led芯片级白光光源的晶圆级封装方法
CN106684227B (zh) 一种紫外led封装方法
CN106505134A (zh) 一种量子点白光led器件及其制备方法
CN102339941A (zh) 发光二极管封装结构及发光二极管模组
CN203967110U (zh) 一种led灯丝片以及led灯丝片灯泡
CN108133929A (zh) 一种高对比度led光源封装结构
CN104916789A (zh) 一种oled封装方法及oled器件
CN205752228U (zh) 一种防硫化和卤化且具有抗氧化功能的倒装封led光源
CN107046026A (zh) 一种防硫化和卤化且具有抗氧化功能的led光源
CN205723624U (zh) 一种防硫化和卤化且具有抗氧化功能的led光源
CN107706280A (zh) 一种通过真空溅射技术制造的led光源的制造方法
CN102420282A (zh) 发光二极管封装结构及其制造方法
CN105518883B (zh) 发光装置用基板、发光装置、以及发光装置用基板的制造方法
CN205723614U (zh) 一种防硫化和卤化且具有抗氧化功能的led光源
CN106058021A (zh) 芯片级封装发光装置及其制造方法
CN107706271A (zh) 一种新型结构的led光源的制作方法
CN208157452U (zh) 一种倒装led发光器件
CN104465965B (zh) 一种用于白光led晶圆级封装的荧光粉薄膜制备方法
CN107516706A (zh) 一种防硫化和卤化且具有抗氧化功能的led光源
CN107046089A (zh) 一种防硫化和卤化且具有抗氧化功能的倒装封led光源
CN203746896U (zh) Led
CN206040689U (zh) 一种新型结构的led光源
CN107845705A (zh) 基材通过真空溅射技术制造的新型led光源的制造方法
CN107331737A (zh) 一种 led 封装方法
CN206685425U (zh) 高稳定性的led支架和led光源

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20170815

RJ01 Rejection of invention patent application after publication