CN107500754A - 一种用于高容高压mlcc的陶瓷介质材料及其制备方法 - Google Patents
一种用于高容高压mlcc的陶瓷介质材料及其制备方法 Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 63
- 239000000919 ceramic Substances 0.000 title claims abstract description 53
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000003985 ceramic capacitor Substances 0.000 claims abstract description 17
- 239000000470 constituent Substances 0.000 claims abstract description 15
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 9
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 9
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 9
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000011656 manganese carbonate Substances 0.000 claims abstract description 9
- 229910000016 manganese(II) carbonate Inorganic materials 0.000 claims abstract description 9
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 9
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 9
- FIXNOXLJNSSSLJ-UHFFFAOYSA-N ytterbium(III) oxide Inorganic materials O=[Yb]O[Yb]=O FIXNOXLJNSSSLJ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 9
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(III) oxide Inorganic materials O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 claims abstract description 8
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 claims abstract description 4
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 claims description 14
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 12
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 11
- 239000012298 atmosphere Substances 0.000 claims description 10
- 238000000227 grinding Methods 0.000 claims description 9
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 claims description 8
- 229910000019 calcium carbonate Inorganic materials 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 5
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 claims description 4
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- 238000000498 ball milling Methods 0.000 abstract description 4
- 238000001465 metallisation Methods 0.000 abstract description 3
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- 238000010532 solid phase synthesis reaction Methods 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 16
- 239000011575 calcium Substances 0.000 description 10
- 229910002113 barium titanate Inorganic materials 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
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- 238000004519 manufacturing process Methods 0.000 description 3
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- 239000002184 metal Substances 0.000 description 3
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- 230000000996 additive effect Effects 0.000 description 2
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- 238000005516 engineering process Methods 0.000 description 2
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- 239000000203 mixture Substances 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
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- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 229910052793 cadmium Inorganic materials 0.000 description 1
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- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
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Abstract
本发明提供一种用于高容高压MLCC的陶瓷介质材料及其制备方法,涉及陶瓷介质技术领域。其包括质量分数为96~98%的主晶相成分和质量分数为2~4%的改性添加物。主晶相成分包括Ca、Y掺杂的BaTiO3,改性添加物选自ZrO2、MnCO3、MgO、Y2O3、Yb2O3、ZnO、Er2O3、La2O3、SiO2中的一种或多种。先通过固相合成法得到预先掺杂Ca、Y的BaTiO3主晶相,然后加入一定的改性添加物球磨得到陶瓷介质材料,其介电常数介于4000~4500之间,能够制备出容量为100nF,直流耐压大于50V的高容高压的优质多层陶瓷电容器,符合X7R特性要求、及MLCC高性能、贱金属化发展趋势的要求,具有广阔的市场应用前景。
Description
技术领域
本发明涉及陶瓷介质领域,且特别涉及一种用于高容高压MLCC的陶瓷介质材料的制备方法。
背景技术
片式多层陶瓷电容器(MLCC)已经被广泛用作微型尺寸、高容量和高可靠性的电子元件,面临更小尺寸、更高容量、更低成本和更高可靠性的市场需求。MLCC是由印好电极(内电极)的陶瓷介质膜片以错位的方式叠合起来,经一次性高温烧结形成陶瓷芯片,再在芯片的两端封上金属层(外电极),形成一个类似独石的结构体。适合在空气气氛中烧结的MLCC,是以贵金属钯或钯银合金做内电极;并且所用的陶瓷介质材料大多含有Pd、Cd等有害金属元素。由于贵金属价格较高,面对日益激烈的市场竞争及HSF的要求,近几年多层陶瓷电容器(MLCC)技术的发展主要集中在产品的高容量化、贱金属化、小型化及多功能化等方面。
采用廉价金属如铜、镍或其合金替代贵金属作为内电极可使MLCC的材料成本得到大幅度的下降;但由于铜、镍或其合金与陶瓷材料在空气中烧结时会引起铜、镍或其合金内电极氧化失效,因此,以铜、镍或其合金作为内电极的MLCC必须要在还原气氛中进行烧结,因此,选用铜、镍或其合金作为内电极时,要求使用的陶瓷介质材料必须具有强的抗还原性。
发明人研究发现,对于具有EIA标准X7R温度特性的陶瓷介质材料,通常是以BaTiO3为主晶材料进行掺杂改性获得。专利CN1252755A公开了一种温度稳定型的贱金属内电极多层陶瓷电容器介电材料,其以纯BaTiO3为主晶相,采用后添加的方式进行掺杂,获得符合X7R特性的材料,获得的陶瓷介质材料的介电常数低,且无法满足高容量高电压MLCC的需求。
发明内容
本发明的目的在于提供一种用于高容高压MLCC的陶瓷介质材料,此陶瓷介质材料Ca、Y掺杂的BaTiO3为主晶相,辅以一定的改性添加物,具有良好的介电性能,能够用于制备高容量高电压的多层陶瓷电容器,市场前景广阔。
本发明的另一目的在于提供一种用于高容高压MLCC的陶瓷介质材料的制备方法,制备方法简单、易操作,适用于工业化大规模生产。
本发明解决其技术问题是采用以下技术方案来实现的。
本发明提出一种用于高容高压MLCC的陶瓷介质材料,包括质量分数为96~98%的主晶相成分和质量分数为2~4%的改性添加物。主晶相成分包括Ca、Y掺杂的BaTiO3,改性添加物选自ZrO2、MnCO3、MgO、Y2O3、Yb2O3、ZnO、Er2O3、La2O3、SiO2中的一种或多种。
本发明提出上述的用于高容高压MLCC的陶瓷介质材料的制备方法,包括以下步骤:
S1,将碳酸钡、Ca的氧化物或碳酸盐、Y的氧化物或碳酸盐、二氧化钛进行湿法球磨,然后在空气气氛下煅烧2~4h,得到主晶相成分;
S2,将主晶相成分和改性添加物进行湿法球磨,干燥得到陶瓷介质材料。
本发明实施例的的高容高压的MLCC陶瓷介质材料及其制备方法的有益效果为:
以Ca、Y掺杂的BaTiO3作为主晶相材料,利用Ca、Y的氧化物或碳酸盐的形式进行预先掺杂,得到预先掺杂有Ca、Y的BaTiO3,生产工序简单,然后再进行改性掺杂。此外,通过优化改性添加物的选择和用量配比,获得符合X7R温度特性的陶瓷介质材料,制备过程简单,不含有毒物质,成本低廉,具有良好的分散性、均匀性和稳定性。特别地,该陶瓷介质材料制得的陶瓷电容器的容量可达100nF,直流耐压在50V以上,该电容器能在还原气氛中进行烧结,与铜、镍或其合金内电极匹配良好,瓷体致密,缺陷少,具有优良的介电性能。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚,下面将对本发明实施例中的技术方案进行清楚、完整地描述。实施例中未注明具体条件者,按照常规条件或制造商建议的条件进行。所用试剂或仪器未注明生产厂商者,均为可以通过市售购买获得的常规产品。
下面对本发明实施例的可低温烧结的陶瓷介质材料、制备方法及多层陶瓷电容器进行具体说明。
本发明实施例提供一种用于高容高压MLCC的陶瓷介质材料,包括质量分数为96~98%的主晶相成分和质量分数为2~4%的改性添加物。主晶相成分包括Ca、Y掺杂的BaTiO3,改性添加物选自ZrO2、MnCO3、MgO、Y2O3、Yb2O3、ZnO、Er2O3、La2O3、SiO2中的一种或多种。在该主晶相和该性添加物的配比下,能够对钛酸钡进行有效改性,提高材料的介电常数,使得该陶瓷介质材料制得的陶瓷电容器具有高容量和高电压。
进一步地,在本发明较佳实施例中,改性添加物中,各组分在所述陶瓷介质材料中的质量分数如下::ZrO2为0.0~0.5%、MnCO3为0~1.5%、MgO为0~1.5%;Y2O3为0.5~1.5%;ZnO为0.0~0.4%;Yb2O3为0~0.4%;Er2O3为0~0.2%;La2O3为0.0~0.2%;SiO2为0.0~0.4%。
进一步地,在本发明较佳实施例中,改性添加物中,各组分在所述陶瓷介质材料中的质量分数如下::ZrO2为0.0~0.5%、MnCO3为0.5~1.5%、MgO为0.8~1.5%、Y2O3为0.5~1.5%、ZnO为0.0~0.4%、Yb2O3为0.1~0.4%、Er2O3为0.1~0.2%、La2O3为0.1~0.2%、SiO2为0.2~0.4%。
更为优选地,主晶相成分的质量分数为96~97%,改性添加物包括以下成分:ZrO2为0~0.2%;MnCO3为0.6~0.9%;MgO为0.8~1.0%;Y2O3为1.0~1.2%;ZnO为0.2~0.4%;Yb2O3为0.0~0.2%;La2O3为0~0.2%;SiO2为0.2~0.3%。
通过优化改性添加物的选择和配比,能够进一步改善陶瓷介质材料的性能,得到性能更为优良的多层陶瓷电容器,例如进一步提高介电性能和容量。
进一步地,在本发明较佳实施例中,陶瓷介质材料制得的介电常数为4000~4500,符合X7R的温度特性。
进一步地,陶瓷介质材料能够还原气氛中1250~1350℃条件下烧结制得多层陶瓷电容器。制得的多层陶瓷电容器的容量大于或等于100nF,且直流耐压值大于50V。
本发明还提供上述的用于高容高压MLCC的陶瓷介质材料的制备方法,包括以下步骤:
S1,将碳酸钡、Ca的氧化物或碳酸盐、Y的氧化物或碳酸盐、二氧化钛进行湿法球磨,然后在空气气氛下煅烧2~4h,得到主晶相成分;
S2,将主晶相成分和改性添加物进行湿法球磨,干燥得到陶瓷介质材料。
进一步地,Ca的氧化物或碳酸盐选用CaCO3,Y的氧化物或碳酸盐选用Y2O3。BaCO3、CaCO3、TiO2和Y2O3的质量比为70:0.35~0.45:30:0.05~0.15。更为优选地,BaCO3、CaCO3、TiO2和Y2O3的质量比为70:0.4:30:0.1。在对BaTiO3进行预先掺杂改性的过程中,掺杂的材料和用量不同,得到的主晶相在材料性能上有较大的差异。使用上述用量的Ca、Y得到预先掺杂的BaTiO3,改变了主晶相的微观结构、介电性能等,使其能够获得高介电常数和高容量。此外,能够使得主晶相能够和其它改性添加物更好地结合。
进一步地,S1步骤中,先将BaCO3、CaCO3、TiO2和Y2O3湿法球磨后,用喷雾干燥塔或其他方式干燥后,置于空气炉中,在1150℃~1200℃的条件下煅烧3小时,合成BaTiO3主晶相。
进一步地,步骤S1中,按重量比1:1~2将物料和水混合进行湿法球磨。
进一步地,步骤S2中,按重量比1:0.6~1将物料和水混合进行湿法球磨。更为优选地,该步骤中,在湿法球磨过程中,加入混合物质量分数2~5%的表面活性剂,能够有效增加球磨效果,增加材料的质量均一性和稳定性。
进一步地,步骤S2中,将物料球磨至平均颗粒尺寸达400~800nm。球磨完毕后用喷雾干燥塔或其他方法进行干燥。
以下结合实施例对本发明的特征和性能作进一步的详细描述。
实施例
(1)将碳酸钡、碳酸钙、氧化钇和二氧化钛按表1的组成比例置于球磨机中进行湿法球磨,混合均匀,用喷雾干燥塔进行干燥,分别在空气炉中于1150℃、1200℃条件下煅烧3小时,合成BaTiO3主晶相。
(2)按表2的组成比例,把BaTiO3主晶相及各种改性添加物按配方组成的重量比称重,置于球磨机中,按重量比为物料:去离子水=1:0.8的比例加入去离子水进行湿法球磨砂磨,要求物料混合均匀,使砂磨后的粉体平均颗粒尺寸达400~800nm。砂磨完毕后用喷雾干燥塔进行干燥,最后得到陶瓷介质材料粉末。
(3)制备陶瓷电容器试样:取上述方法获得的陶瓷介质材料粉末,按比例计算,于100g粉末中加入40-60g无水乙醇,30-45gPVB粘合剂,球磨均匀形成浆料,在经过流延获得厚度为15微米的陶瓷介质膜片生坯,用镍浆作为内电极进行叠印、等静压、切割、排胶、烧结、倒角、端铜或铜合金外部电极后得到多层陶瓷电容器;其中烧结条件是:还原气氛炉,于温度1250~1350℃烧结,保温1.5-6小时。
表1 BaTiO3主晶相的配方表
表2 陶瓷介质材料的配方表
如表3所示,经过上述过程制成的镍、铜内电极多层陶瓷电容器用的抗还原好的X7R陶瓷介质材料,可以在1250℃~1350℃的温度范围内烧结形成陶瓷电容器。通过调整材料合成的配比可形成室温介电常数介于4000~4500,容温变化率介于+15%~-15%之间,室温介电损耗≤5.0%,可制得容量达100nF,且直流耐压值均大于50V,其介电常数连续可调,符合X7R的温度特性,可制备出高容且高电压的优质多层陶瓷电容器,能满足MLCC高性能、贱金属化且抗还原的要求,具有广阔的市场应用前景。
表3 性能测试结果表
以上所描述的实施例是本发明一部分实施例,而不是全部的实施例。本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围,而是仅仅表示本发明的选定实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
Claims (10)
1.一种用于高容高压MLCC的陶瓷介质材料,其特征在于,包括质量分数为96~98%的主晶相成分和质量分数为2~4%的改性添加物,所述主晶相成分包括Ca、Y掺杂的BaTiO3,所述改性添加物选自ZrO2、MnCO3、MgO、Y2O3、Yb2O3、ZnO、Er2O3、La2O3、SiO2中的一种或多种。
2.根据权利要求1所述的用于高容高压MLCC的陶瓷介质材料,其特征在于,所述改性添加物中,各组分在所述陶瓷介质材料中的质量分数如下:ZrO2为0.0~0.5%、MnCO3为0~1.5%、MgO为0~1.5%;Y2O3为0.5~1.5%;ZnO为0.0~0.4%;Yb2O3为0~0.4%;Er2O3为0~0.2%;La2O3为0.0~0.2%;SiO2为0.0~0.4%。
3.根据权利要求1所述的用于高容高压MLCC的陶瓷介质材料,其特征在于,所述改性添加物中,各组分在所述陶瓷介质材料中的质量分数如下:ZrO2为0.0~0.5%、MnCO3为0.5~1.5%、MgO为0.8~1.5%、Y2O3为0.5~1.5%、ZnO为0.0~0.4%、Yb2O3为0.1~0.4%、Er2O3为0.1~0.2%、La2O3为0.1~0.2%、SiO2为0.2~0.4%。
4.根据权利要求1所述的用于高容高压MLCC的陶瓷介质材料,其特征在于,所述陶瓷介质材料制得的多层陶瓷电容器的介电常数为4000~4500,符合X7R的温度特性。
5.根据权利要求1所述的用于高容高压MLCC的陶瓷介质材料,其特征在于,所述陶瓷介质材料在还原气氛中1250~1350℃条件下烧结制得多层陶瓷电容器。
6.根据权利要求1所述的用于高容高压MLCC的陶瓷介质材料,其特征在于,所述陶瓷介质材料制得的多层陶瓷电容器的容量大于或等于100nF,且直流耐压值大于50V。
7.一种如权利要求1~6任意一项所述的用于高容高压MLCC的陶瓷介质材料的制备方法,其特征在于,包括以下步骤:
S1,将碳酸钡、Ca的氧化物或碳酸盐、Y的氧化物或碳酸盐、二氧化钛进行湿法球磨,然后在空气气氛下煅烧2~4h,得到所述主晶相成分;
S2,将所述主晶相成分和所述改性添加物进行湿法球磨,干燥得到所述陶瓷介质材料。
8.根据权利要求7所述的制备方法,其特征在于,步骤S1中,煅烧温度为1150℃~1200℃。
9.根据权利要求7所述的制备方法,其特征在于,所述Ca的氧化物或碳酸盐选用CaCO3,所述Y的氧化物或碳酸盐选用Y2O3,BaCO3、CaCO3、TiO2和Y2O3的质量比为70:0.35~0.45:30:0.05~0.15。
10.根据权利要求7所述的制备方法,其特征在于,步骤S2中,所述陶瓷介质材料的粒径为400~800nm。
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