CN114213120A - 用于小尺寸mlcc的介质材料及其制备方法与电容器 - Google Patents
用于小尺寸mlcc的介质材料及其制备方法与电容器 Download PDFInfo
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- 239000003989 dielectric material Substances 0.000 title claims abstract description 51
- 239000003990 capacitor Substances 0.000 title claims abstract description 13
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000003985 ceramic capacitor Substances 0.000 title abstract description 8
- 239000000919 ceramic Substances 0.000 claims abstract description 33
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910002113 barium titanate Inorganic materials 0.000 claims abstract description 17
- 238000000498 ball milling Methods 0.000 claims abstract description 16
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000013078 crystal Substances 0.000 claims abstract description 13
- 239000002019 doping agent Substances 0.000 claims abstract description 13
- 239000011521 glass Substances 0.000 claims abstract description 12
- 239000004094 surface-active agent Substances 0.000 claims abstract description 12
- 239000000654 additive Substances 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 11
- 238000001354 calcination Methods 0.000 claims abstract description 9
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 claims abstract description 8
- 238000002156 mixing Methods 0.000 claims abstract description 8
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910001928 zirconium oxide Inorganic materials 0.000 claims abstract description 7
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical compound [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 claims abstract description 4
- 229910000030 sodium bicarbonate Inorganic materials 0.000 claims abstract description 4
- 235000017557 sodium bicarbonate Nutrition 0.000 claims abstract description 3
- 239000000843 powder Substances 0.000 claims description 18
- 238000001035 drying Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 230000000996 additive effect Effects 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims description 5
- 238000007873 sieving Methods 0.000 claims description 5
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-O ammonium group Chemical group [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 4
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- 229920000058 polyacrylate Polymers 0.000 claims description 4
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- 229910052689 Holmium Inorganic materials 0.000 claims description 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 3
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 3
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 239000011572 manganese Substances 0.000 claims description 3
- 238000010791 quenching Methods 0.000 claims description 3
- 230000000171 quenching effect Effects 0.000 claims description 3
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 3
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 2
- 229910052810 boron oxide Inorganic materials 0.000 claims description 2
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 2
- 239000002612 dispersion medium Substances 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 150000004649 carbonic acid derivatives Chemical class 0.000 claims 1
- 230000007547 defect Effects 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000010345 tape casting Methods 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- YIWGJFPJRAEKMK-UHFFFAOYSA-N 1-(2H-benzotriazol-5-yl)-3-methyl-8-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carbonyl]-1,3,8-triazaspiro[4.5]decane-2,4-dione Chemical compound CN1C(=O)N(c2ccc3n[nH]nc3c2)C2(CCN(CC2)C(=O)c2cnc(NCc3cccc(OC(F)(F)F)c3)nc2)C1=O YIWGJFPJRAEKMK-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003440 dysprosium oxide Inorganic materials 0.000 description 1
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(iii) oxide Chemical compound O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910000016 manganese(II) carbonate Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002609 medium Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000010405 reoxidation reaction Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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Abstract
本发明涉及片式多层陶瓷电容器技术领域,特别涉及用于小尺寸高容MLCC的陶瓷介质材料及其制备方法与电容器,包括将主晶相钛酸钡进行预处理的步骤;所述预处理的步骤为:将钛酸钡、碳酸氢钠、氧化锆、界面活性剂和水混合球磨6~10h后在980℃下煅烧3h。所述陶瓷介质材料包括如下质量百分数的组分:96.5~99%钛酸钡,0.1~0.5%副料,0.5~1.5%改性添加剂,0.5~1.3%掺杂剂,0.3~1.0%玻璃;所述副料包括如下质量百分数的组分:5~10%碳酸氢钠和90~95%氧化锆。本发明所提供的陶瓷介质材料可适用于制备小尺寸电容器且由该陶瓷介质材料制备得到的电容器符合X5R温度特性。
Description
技术领域
本发明涉及片式多层陶瓷电容器技术领域,特别涉及一种用于小尺寸高容MLCC的陶瓷介质材料及其制备方法与电容器。
背景技术
片式多层陶瓷电容器(MLCC)是重要的电子元器件,主要用于移动电话、5G通信和汽车电子等领域,其由内电极、陶瓷层和端电极三部分组成。其中,介质材料与内电极以错位的方式堆叠后经过高温烧结烧制成块体,再在块体两端封上金属层以形成端电极。
随着电子信息产品的高速发展,MLCC朝向小尺寸、高容量、高可靠性、低成本等方向不断发展。
目前国内用于制作小尺寸高容量MLCC的纳米级BaTiO3基本从日本、美国进口,而国内生产的纳米介质材料,存在羟基残留、气孔等缺陷,掺杂改性后,介质材料介电常数低,且在与Ni电极共烧时抗还原性差等问题。
发明内容
为了克服上述现有技术的缺陷,本发明所要解决的技术问题是:提供一种羟基残留量低、气孔缺陷少且适用于小尺寸高容MLCC的陶瓷介质材料及其制备方法,以及由该陶瓷介质材料制备得到的电容器。
为了解决上述技术问题,本发明提供用于小尺寸MLCC的介质材料的制备方法,包括将主晶相钛酸钡进行预处理的步骤;
所述预处理的步骤为:将钛酸钡、碳酸氢钠、氧化锆、界面活性剂和水混合球磨6~10h后在980℃下煅烧3h。
进一步提供一种由前述制备方法制备得到的用于小尺寸MLCC的介质材料。
更进一步提供由前述用于小尺寸MLCC的介质材料制备得到的电容器。
本发明的有益效果在于:通过在对主晶相与其余改性添加剂、掺杂剂和玻璃进行混合球磨前,对主晶相进行预处理,可有效消除陶瓷介质材料残留的羟基和气孔缺陷,并且能够有效增加主晶相的抗还原性,同时可抑制晶粒生长,所制备得到的陶瓷介质材料粒度分布均匀、分散性好,适用于制备小尺寸高容MLCC。
附图说明
图1所示为本发明在检测例2中未经过预处理的陶瓷介质材料的SEM图片;
图2所示为本发明在检测例2中经过预处理的陶瓷介质材料的SEM图片。
具体实施方式
为详细说明本发明的技术内容、所实现目的及效果,以下结合实施方式并配合附图予以说明。
用于小尺寸MLCC的介质材料的制备方法,包括将主晶相钛酸钡进行预处理的步骤;
所述预处理的步骤为:将钛酸钡、碳酸氢钠、氧化锆、界面活性剂和水混合球磨6~10h后在980℃下煅烧3h。
其中,所述球磨为将物料放入球磨机中,以锆球进行研磨。
需要说明的是,在本文中,在没有特别说明的情况下,水均指代去离子水或更高纯度水。
其中,所述钛酸钡是通过水热法制备得到的,其粒径在0.12~0.15μm。
具体的,用于小尺寸MLCC的介质材料的制备方法包括如下步骤:
S1、对所述钛酸钡进行预处理,并进行微粉碎、球磨、烘干,获得粉体A;
S2、将玻璃和水进行球磨、过筛、在1250℃下煅烧至熔融后进行急冷,然后继续球磨、过筛,获得粉体B;
S3、将改性添加剂、掺杂剂、粉体A、粉体B和界面活性剂混合,以水为分散介质进行球磨10~12h、烘干后获得介电陶瓷材料。
其中,在预处理过程中的界面活性剂和S3中所添加的界面活性剂可以为相同或不同。所述界面活性剂的添加量在S3中为组合物总质量的3~5%,所述界面活性剂的添加量在预处理中添加量为组合物总质量的1~2%。
所述微粉碎用于将煅烧后轻微结块的粉体进行粉碎,并保持粉体的平均粒径在0.12~0.15μm。
用于小尺寸MLCC的介质材料,由前述用于小尺寸MLCC的介质材料的制备方法制备得到;
所述陶瓷介质材料包括如下质量百分数的组分:
96.5~99%钛酸钡,0.1~0.5%副料,0.5~1.5%改性添加剂,0.5~1.3%掺杂剂,0.3~1.0%玻璃;
所述副料包括如下质量百分数的组分:
5~10%碳酸氢钠和90~95%氧化锆。
其中,所述主晶相、副料、改性添加剂、掺杂剂和玻璃的各组成成分的纯度>99.9%。
改性添加剂作为陶瓷介质材料的组成成分,可有效提高陶瓷介质材料的抗还原性,使陶瓷介质材料符合X5R的温度特性。
优选的,所述玻璃包括如下质量百分数的组分:
5~15%氧化硅、28~45%氧化硼、10~12%氧化铝和36~46%氧化铋。
进一步的,所述改性添加剂为镁和锰的氧化物或碳酸盐。
优选的,所述镁和锰的氧化物或碳酸盐的质量比为35~45:44~65。
进一步的,所述掺杂剂为稀土氧化物,所述稀土氧化物为镝、铈、钇、镱、钬中的至少一种。
优选的,所述掺杂剂包括质量百分数为70~100%的镝。
在一种实施方式中,所述掺杂剂由70~100%的镝的氧化物以及0~30%铈、钇、镱、钬中任一种稀土氧化物组成。
优选的,所述界面活性剂为聚丙烯酸铵盐。
一种电容器,由前述用于小尺寸MLCC的介质材料制备得到。
其中,由于制备得到的陶瓷介质材料经过预处理以及与其他组分进行混合,以使当陶瓷介质材料制备MLCC时无需经过氧化炉进行再氧化处理;并且由于陶瓷介质材料粒度分布均匀、分散性好且晶粒尺寸较小,可适用于流延处理,并经过与有机体系混合磨砂后,可通过流延工艺制备得到0.8~1.2μm的陶瓷膜片。
实施例1~9
用于小尺寸MLCC的介质材料,以100g为总重量,按如下表1配方将各组分加入球磨机中,并加入余量的聚丙烯酸铵盐和水,球磨(锆球)8h,并在空气环境下980℃煅烧3h,得粉体A-1、A-2、A-3;
表1
粉体A | BaTiO<sub>3</sub>(g) | NaHCO<sub>3</sub>(g) | ZrO<sub>2</sub>(g) |
A-1 | 97 | 0.01 | 0.09 |
A-2 | 98 | 0.03 | 0.27 |
A-3 | 99 | 0.05 | 0.45 |
按如下表2配方将各组分混合后,加入水,球磨10h后烘干,烘干完成后在1250℃下煅烧,待全部熔融后,将熔融体放入水中急冷,最后在球磨机中磨细、过筛,获得粉体B;
表2
粉体B | SiO<sub>2</sub>(g) | B<sub>2</sub>O<sub>3</sub>(g) | Al<sub>2</sub>O<sub>3</sub>(g) | Bi<sub>2</sub>O<sub>3</sub>(g) |
B | 15 | 40 | 10 | 35 |
按如下表3将粉体A、粉体B和其他组分进行混合,加入水和0.97~1.98g聚丙烯酸铵盐并球磨12h,烘干后获得陶瓷介质材料。
表3
实施例10~18
电容器,取陶瓷介质材料(实施例1~9)100g,加入无水乙醇、乙酸乙酯、PVB等有机物,在砂磨机中研磨形成稳定的浆料,采用流延机(平野R2)制作厚度为1.1~1.2μm的陶瓷膜带,然后用丝网印刷的方式将贱金属镍印刷在陶瓷膜带上,再经过叠层、温水压、切割、生晶片倒角、脱脂、烧结、Cu浆封烧端、外电极研磨,获得尺寸为英制0201的MLCC。
其中叠层层数为170~190层,脱脂分两次进行,第一次在温度210~340℃,50mm水柱压力的氮气气氛下进行,第二次在氮氢气氛(氢气相对氮气浓度为0.2%)下进行;烧结条件为:温度1180±20℃,保温0.75~2h,氮氢气氛,其中氢气相对于氮气的浓度为0.08~5%。
对比例1
用于小尺寸MLCC的介质材料,与实施例1的区别在于:A-1是未经过预处理的钛酸钡。
检测例1
对实施例10~18制备得到的电容器进行性能检测,检测结果如表4所示。
表4
从表4可以看出,实施例10~18所制备得到的MLCC性能优异,符合制备英制0201电容器的尺寸要求,且符合X5R温度特性。
检测例2
将实施例1和对比例2制备得到的陶瓷介质材料采用如实施例10~18中相同的工艺制备陶瓷烧成品分别进行SEM检测,结果如图1和图2所示。
从图1和图2可以看出,经过预处理的陶瓷介质材料表面气孔缺陷少,陶瓷膜带更为致密。
综上所述,通过在对主晶相与其余改性添加剂、掺杂剂和玻璃进行混合球磨前,对主晶相进行预处理,可有效消除陶瓷介质材料残留的羟基和气孔缺陷,并且能够有效增加主晶相的抗还原性,同时可抑制晶粒生长,所制备得到的陶瓷介质材料粒度分布均匀、分散性好,适用于制备小尺寸高容MLCC。
以上所述仅为本发明的实施例,并非因此限制本发明的专利范围,凡是利用本发明说明书及附图内容所作的等同变换,或直接或间接运用在相关的技术领域,均同理包括在本发明的专利保护范围内。
Claims (10)
1.用于小尺寸MLCC的介质材料的制备方法,其特征在于,包括将主晶相钛酸钡进行预处理的步骤;
所述预处理的步骤为:将钛酸钡、碳酸氢钠、氧化锆、界面活性剂和水混合球磨6~10h后在980℃下煅烧3h。
2.根据权利要求1所述用于小尺寸MLCC的介质材料的制备方法,其特征在于,包括如下步骤:
S1、对所述钛酸钡进行预处理,并进行微粉碎、球磨、烘干,获得粉体A;
S2、将玻璃和水进行球磨、过筛、在1250℃下煅烧至熔融后进行急冷,然后继续球磨、过筛,获得粉体B;
S3、将改性添加剂、掺杂剂、粉体A、粉体B和界面活性剂混合,以水为分散介质进行球磨10~12h、烘干后获得介电陶瓷材料。
3.用于小尺寸MLCC的介质材料,其特征在于,由权利要求1或2所述用于小尺寸MLCC的介质材料的制备方法制备得到;
所述陶瓷介质材料包括如下质量百分数的组分:
96.5~99%钛酸钡,0.1~0.5%副料,0.5~1.5%改性添加剂,0.5~1.3%掺杂剂,0.3~1.0%玻璃;
所述副料包括如下质量百分数的组分:
5~10%碳酸氢钠和90~95%氧化锆。
4.根据权利要求3所述用于小尺寸MLCC的介质材料,其特征在于,所述玻璃包括如下质量百分数的组分:
5~15%氧化硅、28~45%氧化硼、10~12%氧化铝和36~46%氧化铋。
5.根据权利要求3所述用于小尺寸MLCC的介质材料,其特征在于,所述改性添加剂为镁和锰的氧化物或碳酸盐。
6.根据权利要求5所述用于小尺寸MLCC的介质材料,其特征在于,所述镁和锰的氧化物或碳酸盐的质量比为35~45:44~65。
7.根据权利要求3所述用于小尺寸MLCC的介质材料,其特征在于,所述掺杂剂为稀土氧化物,所述稀土氧化物为镝、铈、钇、镱、钬中的至少一种。
8.根据权利要求3所述用于小尺寸MLCC的介质材料,其特征在于,所述掺杂剂包括质量百分数为70~100%的镝。
9.根据权利要求3所述用于小尺寸MLCC的介质材料,其特征在于,所述界面活性剂为聚丙烯酸铵盐。
10.一种电容器,其特征在于,由权利要求3~9任一项所述用于小尺寸MLCC的介质材料制备得到。
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