CN107481935A - The preparation method of diamond base field-effect transistor - Google Patents
The preparation method of diamond base field-effect transistor Download PDFInfo
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- CN107481935A CN107481935A CN201710632626.8A CN201710632626A CN107481935A CN 107481935 A CN107481935 A CN 107481935A CN 201710632626 A CN201710632626 A CN 201710632626A CN 107481935 A CN107481935 A CN 107481935A
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 64
- 239000010432 diamond Substances 0.000 title claims abstract description 64
- 230000005669 field effect Effects 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 43
- 239000002184 metal Substances 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 36
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- 239000007788 liquid Substances 0.000 claims description 10
- 238000000407 epitaxy Methods 0.000 claims description 9
- 238000005468 ion implantation Methods 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 8
- 238000005566 electron beam evaporation Methods 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 12
- 239000000243 solution Substances 0.000 description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
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- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
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- 229910005855 NiOx Inorganic materials 0.000 description 1
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- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
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- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
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- 239000000203 mixture Substances 0.000 description 1
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- 229910052750 molybdenum Inorganic materials 0.000 description 1
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- 229910052754 neon Inorganic materials 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- 229910052718 tin Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
- H01L29/66037—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66045—Field-effect transistors
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The invention discloses a kind of preparation method of diamond base field-effect transistor, it is related to technical field of semiconductors.This method comprises the following steps：Conductive layer is formed in the upper surface of diamond layer；In the upper surface mask film covering layer of the conductive layer；Remove mask layer and conductive layer corresponding to inactive regions；Mask layer corresponding to mask layer corresponding to source region and drain region is removed respectively；Respectively source region high-doped zone and drain region high-doped zone are formed in the source region and the drain region；The carrier of the source region high-doped zone, the drain region high-doped zone and the conductive layer is activated respectively；The first metal layer is covered in the upper surface of the upper surface of the source region high-doped zone and the drain region high-doped zone respectively, forms source electrode and drain electrode；Second metal layer is covered in the upper surface of mask layer corresponding to grid region, forms grid.The present invention can improve the resistance to breakdown characteristics of device, reduce the ohmic contact resistance of device.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of preparation method of diamond base field-effect transistor.
Background technology
Device using monocrystalline, polycrystalline and nanocrystalline diamond as material foundation is referred to as diamond-based devices, such as Buddha's warrior attendant
Stone metal-semiconductor field effect transistor（Metal Semiconductor Field Effect Transistor, MESFET）、
Metal-insulator field effect property crystal (Metal Insulating Field Effect Transistor, MISFET) and crystal type field
Effect transistor（Junction Field Effect Transistor, JFET）Deng.Diamond-based devices have operating temperature
High, the advantages that breakdown field is powerful, cut-off frequency is high, power density is big, it is the first choice in the high-power field of future microwave.But Buddha's warrior attendant
The grid of ground mass field-effect transistor and the Schottky resistance to sparking of diamond can be poor, and then cause diamond base field-effect
The performance of transistor reduces.
The content of the invention
In view of this, the embodiment of the present invention provides a kind of preparation method of hard rock field-effect transistor, to solve existing skill
Because the Schottky resistance to sparking of grid and diamond poor can cause the technical problem of device performance reduction in art.
In order to solve the above technical problems, the technical solution used in the present invention is：
A kind of preparation method of diamond base field-effect transistor, comprises the following steps：
Conductive layer is formed in the upper surface of diamond layer, the diamond layer is resistive formation；
In the upper surface mask film covering layer of the conductive layer, the material of the mask layer is the material with dielectric property；
Remove mask layer and conductive layer corresponding to inactive regions；
Mask layer corresponding to mask layer corresponding to source region and drain region is removed respectively；
Source region high-doped zone is formed in the source region, drain region high-doped zone is formed in the drain region；
The carrier of the source region high-doped zone, the drain region high-doped zone and the conductive layer is activated respectively；
In the upper surface of the source region high-doped zone, covering the first metal layer forms source electrode, the upper table in the drain region high-doped zone
Face covering the first metal layer forms drain electrode；
Second metal layer is covered in the upper surface of mask layer corresponding to grid region, forms grid.
Optionally, it is described to form conductive layer in the upper surface of diamond layer, specifically include：
Diamond layer upper surface epitaxial growth doped diamond as conductive layer；Or
Doped ions are injected on diamond layer by ion implantation and form conductive layer.
Optionally, mask layer and conductive layer corresponding to the removal inactive regions, are specifically included：
Photoresist is covered in the upper surface of active region by photoetching process；
The mask layer of inactive regions is removed by corrosive liquid；
The conductive layer of the inactive regions is etched by etching technics；
Remove the photoresist.
Optionally, it is described remove mask layer and drain region corresponding to source region respectively corresponding to mask layer, specifically include：
The upper surface covering photoresist in the region outside source region and drain region respectively；
Mask layer corresponding to mask layer corresponding to the source region and the drain region is removed by corrosive liquid respectively；
Remove the photoresist.
Optionally, it is described to form source region high-doped zone in the source region, drain region high-doped zone is formed in the drain region, specifically
Including：
Carrier is injected in conductive layer corresponding to the source region by ion implantation and forms source region high-doped zone, is noted by ion
Enter method and form drain region high-doped zone in conductive layer injection carrier corresponding to the drain region.
Optionally, it is described to form source region high-doped zone in the source region, drain region high-doped zone is formed in the drain region, specifically
Including：
Source region high-doped zone is formed in the highly doped epitaxial layer of conductive layer epitaxially grown corresponding to the source region by epitaxy, led to
Cross epitaxy and form drain region high-doped zone in the highly doped epitaxial layer of conductive layer epitaxially grown corresponding to the drain region.
Optionally, it is described to form source electrode in the upper surface of source region high-doped zone covering the first metal layer, in the leakage
The upper surface covering the first metal layer of area high-doped zone forms drain electrode, specifically includes：
Pass through region overlay photoresist of the photoetching process outside the source region and the drain region；
By electron beam evaporation process respectively in the upper table of the upper surface of the source region high-doped zone and the drain region high-doped zone
Face covers the first metal layer；
The source region high-doped zone and the drain region high-doped zone is set to be formed with the first metal layer respectively by annealing process
Ohmic contact；
Remove the photoresist.
Optionally, second metal layer is covered in the upper surface of mask layer corresponding to grid region, forms grid, specifically include：
Pass through region overlay photoresist of the photoetching process outside the grid region；
Second metal layer is covered in the upper surface of mask layer corresponding to the grid region by electron beam evaporation process；
Remove the photoresist.
Optionally, the load for activating the source region high-doped zone, the drain region high-doped zone and the conductive layer respectively
Stream, is specifically included：
Annealed in high vacuum, reducibility gas atmosphere or inert gas atmosphere, activate the source region high-doped zone, described respectively
Drain region high-doped zone and the carrier of the conductive layer.
It is using beneficial effect caused by above-mentioned technical proposal：The embodiment of the present invention in grid lower channel area by using
Material with dielectric property is as mask layer, it is possible to increase the resistance to breakdown characteristics and reliability of device, also, noted using ion
Enter method or be epitaxially formed source region high-doped zone and drain region high-doped zone, significantly reduce the Ohmic contact potential barrier of device so that
Good Ohmic contact is formed between diamond and metal electrode, reduces the ohmic contact resistance of device.
Brief description of the drawings
Fig. 1 is the schematic flow sheet of the preparation method for the diamond base field-effect transistor that the embodiment of the present invention one provides；
Fig. 2 is the cross-sectional view of the preparation method for the diamond base field-effect transistor that the embodiment of the present invention one provides.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, accompanying drawing is compareed below and is combined implements
Example, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only explaining this hair
It is bright, it is not intended to limit the present invention.
Embodiment one
Fig. 1 and Fig. 2 are refer to, Fig. 1 is the preparation method for the diamond base field-effect transistor that the embodiment of the present invention one provides
Schematic flow sheet, Fig. 2 are the cross-section structures of the preparation method for the diamond base field-effect transistor that the embodiment of the present invention one provides
Schematic diagram.
In embodiments of the present invention, such as Fig. 2（1）Shown, diamond substrate is divided into active region and inactive regions, described to have
Source region refers to the preparation region of mesa region, i.e. active device, and the part beyond active region is inactive regions.Wherein, have
Source region is divided into source region, grid region and drain region again, and source region and drain region are located at the both sides in grid region respectively.
The preparation method of diamond base field-effect transistor comprises the following steps：
Step S101, conductive layer is formed in the upper surface of diamond layer；The diamond layer is resistive formation.
Optionally, step S101 specific implementation is：In the upper surface epitaxial growth doped diamond of diamond layer
As conductive layer；Or Doped ions are injected on diamond layer by ion implantation and form conductive layer.
In embodiments of the present invention, such as Fig. 2（1）It is shown to form conductive layer 202 in the upper surface of diamond layer 201.Pass through
Ion implantation injects Doped ions on diamond layer 201 and forms conductive layer 202, the ion of injection include but is not limited to H from
Son, B ions, P ion and Si ions.Or by epitaxy in the upper surface epitaxial growth doped epitaxial layer of diamond layer 201, shape
Into conductive layer 202.Conductive layer can also be formed by the element doping method such as plasma processing method, chemical doping method or B, P and N
202。
Step S102, in the upper surface mask film covering layer of the conductive layer, the mask material is with dielectric property
Material.
In embodiments of the present invention, such as Fig. 2（2）It is shown, in the upper surface mask film covering layer 203 of conductive layer 202.Mask layer
203 material includes but is not limited to Al2O3、SixNy、SixOy、HfxOy、PdxOy、TixOy、AgxOy、CrxOy、GaxOy、CuxOy、
NiOx、SnOxAnd W2O5, metal organic chemical vapor deposition can be passed through（Metal-organic Chemical Vapor
Deposition, MOCVD）, hydride gas-phase epitaxy（Hydride Vapor Epitaxy, HVPE）, molecular beam epitaxy
（Molecular Beam Epitaxy, MBE）, ald（Atomic Layer Deposition, ALD）In conductive layer
202 upper surface growth mask layer 203.
Step S103, remove mask layer and conductive layer corresponding to inactive regions.
Optionally, step S103 specific implementation is：Light is covered in the upper surface of active region by photoetching process
Photoresist；The mask layer of inactive regions is removed by corrosive liquid；The conductive layer of the inactive regions is etched by etching technics；Remove
The photoresist.
In embodiments of the present invention, such as Fig. 2（3）It is shown, by photoetching process in the upper surface of mesa region, i.e. active area
The upper surface covering photoresist in domain, exposes inactive regions, protects active region by photoresist, avoid the mask layer of active region
It is removed with conductive layer in follow-up technique.The mask layer of inactive regions is removed by corrosive liquid again, corrosive liquid is included but not
It is limited to mixed liquor, boric acid solution, hydrochloric acid solution or the nitric acid of hydrofluoric acid, ammoniacal liquor and hydrogen peroxide and the mixed liquor of glacial acetic acid.Finally
The conductive layer of inactive regions is etched away by etching technics, and removes photoresist, realizes mesa-isolated.
Step S104, mask layer corresponding to mask layer corresponding to source region and drain region is removed respectively.
Optionally, step S104 specific implementation is：The upper surface in the region outside source region and drain region is covered respectively
Lid photoresist；Mask layer corresponding to mask layer corresponding to the source region and the drain region is removed by corrosive liquid respectively；Remove institute
State photoresist.
In embodiments of the present invention, such as Fig. 2（4）It is shown, the upper surface covering in the region outside source region and drain region respectively
Photoresist, expose source region and drain region, other regions are protected by photoresist.It is corresponding by removing the source region by corrosive liquid again
Mask layer and the drain region corresponding to mask layer, corrosive liquid include but is not limited to hydrofluoric acid, ammoniacal liquor and hydrogen peroxide mixed liquor,
The mixed liquor of boric acid solution, hydrochloric acid solution or nitric acid and glacial acetic acid, finally removes photoresist.
Step S105, source region high-doped zone is formed in the source region, and drain region high-doped zone is formed in the drain region.
Optionally, step S105 specific implementation is：By ion implantation in conductive layer corresponding to the source region
Inject carrier and form source region high-doped zone, injecting carrier in conductive layer corresponding to the drain region by ion implantation forms
Drain region high-doped zone.
Optionally, step S105 specific implementation is：By epitaxy in conductive layer extension corresponding to the source region
Grow highly doped epitaxial layer and form source region high-doped zone, it is high in conductive layer epitaxially grown corresponding to the drain region by epitaxy
The epitaxial layer of doping forms drain region high-doped zone.
In embodiments of the present invention, such as Fig. 2（5）It is shown, can by injection method respectively in conductive layer corresponding to source region and
Conductive layer corresponding to drain region injects carrier, forms source region high-doped zone 204 and drain region high-doped zone 205, the ion bag of injection
Include but be not limited to H ions, Si ions, B ions and F ion.Can also be by orienting epitaxial growth doped diamond epitaxial layer shape
Into source region high-doped zone 204 and drain region high-doped zone 205, doped diamond epitaxial layer include but is not limited to the extension of diamond containing H,
The extension of diamond containing Si, the extension of diamond containing B, the extension of diamond containing N, the extension of diamond containing F and the extension of diamond containing Fe, extension
Thickness degree is 0.1 nanometer to 1 micron.
Step S106, the current-carrying of the source region high-doped zone, the drain region high-doped zone and the conductive layer is activated respectively
Son.
Optionally, step S106 specific implementation is：In high vacuum, reducibility gas atmosphere or inert gas atmosphere
Middle annealing, the carrier of the source region high-doped zone, the drain region high-doped zone and the conductive layer is activated respectively.
In embodiments of the present invention, reducibility gas atmosphere includes but is not limited to hydrogen, carbon monoxide and hydrogen sulfide, inertia
Gas atmosphere includes but is not limited to argon gas, helium and neon；Annealing temperature is 50 DEG C to 2000 DEG C.
Step S107, in the upper surface of the source region high-doped zone, covering the first metal layer forms source electrode, in the drain region
The upper surface covering the first metal layer of high-doped zone forms drain electrode.
Optionally, step S107 specific implementation is：By photoetching process outside the source region and the drain region
Region overlay photoresist；It is highly doped in the upper surface of the source region high-doped zone and the drain region by electron beam evaporation process
The upper surface covering the first metal layer in area；Make the source region high-doped zone and the drain region high-doped zone respectively by annealing process
Ohmic contact is formed with the first metal layer；Remove the photoresist.
In embodiments of the present invention, such as Fig. 2（6）It is shown, by photoresist by the region overlay outside source region and drain region, dew
Go out source region and drain region, the metal of source region first is covered in the upper surface of source region high-doped zone 204 by electron beam evaporation process respectively
Layer 206, drain region the first metal layer 207 is covered in the upper surface of drain region high-doped zone 205, then make source region highly doped by annealing process
Miscellaneous area 204 forms Ohmic contact with source region the first metal layer 206, and drain region high-doped zone 205 is formed with drain region the first metal layer 207
Ohmic contact, finally remove photoresist.The material of source region the first metal layer and drain region the first metal layer include but is not limited to Au,
Pt, Pd, Ni, Ti or the alloy by two or three of composition described above in above metal.
Step S108, second metal layer is covered in the upper surface of mask layer corresponding to grid region, forms grid.
Optionally, step S108 specific implementation is：Pass through region overlay of the photoetching process outside the grid region
Photoresist；Second metal layer is covered in the upper surface of mask layer corresponding to the grid region by electron beam evaporation process；Remove institute
State photoresist.
In embodiments of the present invention, such as Fig. 2（7）It is shown, pass through region overlay light of the photoetching process outside the grid region
Photoresist；Second metal layer 208 is covered in the upper surface of mask layer corresponding to the grid region by electron beam evaporation process；Remove institute
State photoresist.The material of second metal layer 208 includes but is not limited to Al, Ni, Sn, Ti and W.Grid includes but is not limited to straight grid, T
Type grid and Y type grid.
The embodiment of the present invention in grid lower channel area by using the material with dielectric property to be used as mask layer, it is possible to increase
The resistance to breakdown characteristics and reliability of device, also, using ion implantation or it is epitaxially formed source region high-doped zone and drain region height
Doped region, significantly reduce the Ohmic contact potential barrier of device so that good ohm is formed between diamond and metal electrode and is connect
Touch, reduce the ohmic contact resistance of device, the current characteristics and frequency performance of device can be lifted.
Embodiment two
The embodiment of the present invention two provides a kind of preparation method of diamond base field-effect transistor, and this method includes：
（1）Hydrogen plasma process is utilized on diamond layer 30 minutes, p-type electric-conducting layer is formed on high resistant diamond layer.
（2）One layer of TiO is covered in diamond layer upper surface2Mask layer, mask layer thickness 100nm.
（3）Photoetching table top, table top exterior domain, i.e. inactive regions TiO are removed first with hydrofluoric acid2Mask, recycle oxygen
Plasma etch apparatus performs etching, and etches 2 minutes, removes the p-type electric-conducting layer outside mesa region, realizes mesa-isolated.
（4）In TiO2Photoetching source region and drain region are distinguished on mask layer.
（5）Remove the TiO in source region and drain region respectively using hydrofluoric acid2Mask.
（6）Respectively in source region and drain region injection H ion 100keV, implantation dosage 5 × 1015 cm-3, in hydrogen atmosphere
400 DEG C of annealing 20min, form source region high-doped zone and drain region high-doped zone respectively.
（7）Respectively in source region high-doped zone and drain region high-doped zone deposit Ohmic contact Au metal electrodes.
（8）In grid region TiO2Deposited metal Ti makes T-shaped gate electrode on mask.
Embodiment three
The embodiment of the present invention three provides a kind of preparation method of diamond base field-effect transistor, and this method includes：
（1）Pass through 5000 μm of MPCVD method growing high resistant polycrystalline diamond layer, profit on molybdenum substrate
Use molecular beam epitaxy（MBE）Method grows B doped p type diamond 100nm, forms conductive layer, is annealed at a temperature of 400 DEG C
30min, carrier concentration 1017 cm-3To 1019 cm-3。
（2）One layer of Al is covered in conductive layer surface2O3Mask layer, mask layer thickness 200nm.
（3）Photoetching table top, table top exterior domain Al is removed first with hydrofluoric acid2O3Mask, recycle oxygen plasma etch
Equipment performs etching, and etches 2 minutes, removes the p-type electric-conducting layer outside mesa region, realizes mesa-isolated.
（4）In Al3O2Photoetching source region and drain region are distinguished on mask layer.
（5）Remove the Al in source region and drain region respectively using hydrofluoric acid2O3Mask.
（6）Respectively B ion 80eV, implantation dosage 2 × 10 are injected in conductive layer corresponding to source region and drain region15 cm-3, in argon
800 DEG C of annealing 30min, form source region high-doped zone and drain region high-doped zone respectively in gas atmosphere.
（7）Respectively in source region high-doped zone and drain region high-doped zone deposit Ohmic contact Pt metal electrodes.
（8）In grid region Al3O2Deposited metal Al makes straight gate electrode on mask.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement made within refreshing and principle etc., should be included in the scope of the protection.
Claims (9)
1. a kind of preparation method of diamond base field-effect transistor, it is characterised in that comprise the following steps：
Conductive layer is formed in the upper surface of diamond layer, the diamond layer is resistive formation；
In the upper surface mask film covering layer of the conductive layer, the material of the mask layer is the material with dielectric property；
Remove mask layer and conductive layer corresponding to inactive regions；
Mask layer corresponding to mask layer corresponding to source region and drain region is removed respectively；
Source region high-doped zone is formed in the source region, drain region high-doped zone is formed in the drain region；
The carrier of the source region high-doped zone, the drain region high-doped zone and the conductive layer is activated respectively；
In the upper surface of the source region high-doped zone, covering the first metal layer forms source electrode, the upper table in the drain region high-doped zone
Face covering the first metal layer forms drain electrode；
Second metal layer is covered in the upper surface of mask layer corresponding to grid region, forms grid.
2. the preparation method of diamond base field-effect transistor as claimed in claim 1, it is characterised in that described in diamond
The upper surface of layer forms conductive layer, specifically includes：
Diamond layer upper surface epitaxial growth doped diamond as conductive layer；Or
Doped ions are injected on diamond layer by ion implantation and form conductive layer.
3. the preparation method of diamond base field-effect transistor as claimed in claim 1, it is characterised in that the removal is passive
Mask layer corresponding to region and conductive layer, are specifically included：
Photoresist is covered in the upper surface of active region by photoetching process；
The mask layer of inactive regions is removed by corrosive liquid；
The conductive layer of the inactive regions is etched by etching technics；
Remove the photoresist.
4. the preparation method of diamond base field-effect transistor as claimed in claim 1, it is characterised in that described to remove respectively
Mask layer corresponding to mask layer corresponding to source region and drain region, is specifically included：
The upper surface covering photoresist in the region outside source region and drain region respectively；
Mask layer corresponding to mask layer corresponding to the source region and the drain region is removed by corrosive liquid respectively；
Remove the photoresist.
5. the preparation method of diamond base field-effect transistor as claimed in claim 1, it is characterised in that described in the source
Area forms source region high-doped zone, forms drain region high-doped zone in the drain region, specifically includes：
Carrier is injected in conductive layer corresponding to the source region by ion implantation and forms source region high-doped zone, is noted by ion
Enter method and form drain region high-doped zone in conductive layer injection carrier corresponding to the drain region.
6. the preparation method of diamond base field-effect transistor as claimed in claim 1, it is characterised in that described in the source
Area forms source region high-doped zone, forms drain region high-doped zone in the drain region, specifically includes：
Source region high-doped zone is formed in the highly doped epitaxial layer of conductive layer epitaxially grown corresponding to the source region by epitaxy, led to
Cross epitaxy and form drain region high-doped zone in the highly doped epitaxial layer of conductive layer epitaxially grown corresponding to the drain region.
7. the preparation method of diamond base field-effect transistor as claimed in claim 1, it is characterised in that described in the source
The upper surface covering the first metal layer of area high-doped zone forms source electrode, and the first gold medal is covered in the upper surface of the drain region high-doped zone
Belong to layer and form drain electrode, specifically include：
Pass through region overlay photoresist of the photoetching process outside the source region and the drain region；
By electron beam evaporation process respectively in the upper table of the upper surface of the source region high-doped zone and the drain region high-doped zone
Face covers the first metal layer；
The source region high-doped zone and the drain region high-doped zone is set to be formed with the first metal layer respectively by annealing process
Ohmic contact；
Remove the photoresist.
8. the preparation method of diamond base field-effect transistor as claimed in claim 1, it is characterised in that corresponding to grid region
The upper surface covering second metal layer of mask layer, forms grid, specifically includes：
Pass through region overlay photoresist of the photoetching process outside the grid region；
Second metal layer is covered in the upper surface of mask layer corresponding to the grid region by electron beam evaporation process；
Remove the photoresist.
9. the preparation method of the diamond base field-effect transistor as described in claim any one of 1-8, it is characterised in that described
The carrier of the source region high-doped zone, the drain region high-doped zone and the conductive layer is activated respectively, is specifically included：
Annealed in high vacuum, reducibility gas atmosphere or inert gas atmosphere, activate the source region high-doped zone, described respectively
Drain region high-doped zone and the carrier of the conductive layer.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109887836A (en) * | 2019-01-25 | 2019-06-14 | 西安交通大学 | The preparation method of the field effect transistor of n-type doping single-crystal diamond field plate structure |
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| US5371383A (en) * | 1993-05-14 | 1994-12-06 | Kobe Steel Usa Inc. | Highly oriented diamond film field-effect transistor |
| US5523588A (en) * | 1993-09-28 | 1996-06-04 | Kabushiki Kaisha Kobe Seiko Sho | Diamond film field effect transistor with self aligned source and drain regions |
| CN101303979A (en) * | 2008-07-01 | 2008-11-12 | 上海大学 | Method for preparing nanocrystalline diamond film field-effect transistor |
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- 2017-07-28 CN CN201710632626.8A patent/CN107481935A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5371383A (en) * | 1993-05-14 | 1994-12-06 | Kobe Steel Usa Inc. | Highly oriented diamond film field-effect transistor |
| US5523588A (en) * | 1993-09-28 | 1996-06-04 | Kabushiki Kaisha Kobe Seiko Sho | Diamond film field effect transistor with self aligned source and drain regions |
| CN101303979A (en) * | 2008-07-01 | 2008-11-12 | 上海大学 | Method for preparing nanocrystalline diamond film field-effect transistor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109887836A (en) * | 2019-01-25 | 2019-06-14 | 西安交通大学 | The preparation method of the field effect transistor of n-type doping single-crystal diamond field plate structure |
| CN109887836B (en) * | 2019-01-25 | 2021-03-02 | 西安交通大学 | Preparation method of field effect transistor with n-type doped monocrystalline diamond field plate structure |
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