CN107464866A - A kind of high light-emitting efficiency diode with hemisphere photonic crystal complicated periodic structure - Google Patents
A kind of high light-emitting efficiency diode with hemisphere photonic crystal complicated periodic structure Download PDFInfo
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- CN107464866A CN107464866A CN201710614758.8A CN201710614758A CN107464866A CN 107464866 A CN107464866 A CN 107464866A CN 201710614758 A CN201710614758 A CN 201710614758A CN 107464866 A CN107464866 A CN 107464866A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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Abstract
The present invention provides a kind of high light-emitting efficiency diode with hemisphere photonic crystal complicated periodic structure, including to it is lower and on the Sapphire Substrate, cushion, n type semiconductor layer, multiple quantum well layer and the p type semiconductor layer that are sequentially connected；The p type semiconductor layer is provided with the hemisphere photonic crystal complicated periodic structure array of tetragonal；The hemisphere photonic crystal complicated periodic structure array includes some big hemisphere and small hemisphere, and the diameter of the big hemisphere is more than the diameter of small hemisphere；Pros of the big hemisphere using lattice constant as a arrange, and the small hemisphere is also that the square arrangement using lattice constant as a is evenly arranged in the arrangement of big hemisphere, and the adjacent big hemisphere and small hemisphere are spaced apart composition rounded projections arranged.The present invention utilizes finite time-domain calculus of finite differences, and a kind of multiple periodic photonic crystal structure of simple large and small hemispheres is designed on p type semiconductor layer, LED light emission rate is increased substantially, is 8.3 times of common LED or so.
Description
Technical field
The invention belongs to LED research fields, are related to a kind of photonic crystal base hair etched with photonic crystal in light output surface
Optical diode, particularly a kind of high light-emitting efficiency diode with hemisphere photonic crystal complicated periodic structure.
Background technology
Semiconductor light-emitting-diode is wide just because of its long lifespan, energy-conserving and environment-protective, high reliability since invention
General applies in terms of the illuminations such as indicator lamp, traffic lights, display screen, but its outer quantum light extraction efficiency is low governs luminous two
The development of pole pipe.Because the semi-conducting material of the light emitting diode of preparation and the refractive index of air are bigger, light is two
Understand experiences total internal reflection on person interface and return in semiconductor, so that most of light energy is bound in semiconductor
Portion；And Fresnel reflection occurs when penetrating interface for light, the loss of energy is also inevitably resulted in.For not any
The GaN base blue-ray LED of surface texture, its top light extraction efficiency LEE only 4% or so.In view of the folding of GaN (n ≈ 2.5) and air
Rate is penetrated, the critical angle of light escape cone is about 23, and only the light less than critical angle can be run away from LED.Therefore, reduce complete
Reflection, the critical angle of increase escape light cone, turns into the effective means for improving extraction efficiency., can by the surface-texturing on surface
To suppress the reflection of interior lights and light is scattered upwards.Since E.Yablonovitch in 1987 proposes photonic crystal (PC),
Photonic crystal just causes the interest of different researchers.The special construction of the height index dielectric of periodic distribution makes light
Sub- crystal can be used to strengthen spontaneous radiation or improve the light extraction efficiency of solid state light emitter.In recent years, photonic crystal is increased on surface
The light extraction efficiency for improving LED is widely paid close attention to.
Photonic crystal is the artificial crystal formed by the dielectric substance periodic arrangement of different refractivity.Photonic crystal
LED is applied to, due to its distinctive forbidden photon band effect, on the one hand the guided wave mode for dropping into forbidden band can be made directly to be coupled
As radiation mode, penetrate and air inlet another aspect, if glow frequency is located on photonic crystal band, photonic crystal
These Mode Couplings can be made to turn into radiation mode by Bragg diffraction, reach the purpose of improving extraction efficiency.Therefore, photon
The preparation of crystal has great importance to the light extraction efficiency of lifting.Disclosed in Chinese patent CN101916805A《Increase is luminous
The concentric photonic crystal structure of diode outer luminous efficiency》, it is proposed that a kind of air or low-index material are situated between with coating or layer
The closed-loop that matter ITO is formed improves LED light extraction efficiency for circular or rectangular configuration, is 3 times of no photonic crystal.China
Disclosed in patent CN104966769A《A kind of light emitting diode with quantum dots with two-photon crystal structure》, upper and lower two layers of photon
Crystal effectively improves LED light extraction efficiency respectively.
The content of the invention
The purpose of the present invention is to provide a kind of high light extraction with hemisphere photonic crystal complicated periodic structure regarding to the issue above
Efficiency diode, strengthen the light extraction efficiency of light emitting diode using hemispherical complicated periodic structure.
The technical scheme is that：A kind of high light-emitting efficiency diode with hemisphere photonic crystal complicated periodic structure,
Including to it is lower and on the Sapphire Substrate, cushion, n type semiconductor layer, multiple quantum well layer and the p type semiconductor layer that are sequentially connected；
The p type semiconductor layer is provided with the hemisphere photonic crystal complicated periodic structure array of tetragonal；The hemisphere light
Sub- crystal complicated periodic structure array includes some big hemisphere and small hemisphere, and the diameter of the big hemisphere is more than the diameter of small hemisphere；
Pros of the big hemisphere using lattice constant as a arrange, and the small hemisphere is also that the pros using lattice constant as a arrange
Row are evenly arranged in the arrangement of big hemisphere, and the adjacent big hemisphere and small hemisphere are spaced apart composition rounded projections arranged.
In such scheme, in rounded projections arranged, the side between two adjacent big hemisphere is a, big hemisphere and small hemisphere
Between side be
In such scheme, the big hemispherical diameter is 1200 ± 50nm, and the small hemispherical diameter is 360 ± 20nm.
Further, the big hemispherical diameter is 1200nm, and the small hemispherical diameter is 360nm.
In such scheme, the tetragonal constant a is 1500 scholar 50nm.
Further, the tetragonal constant is 1500nm.
In such scheme, the material of the big hemisphere and small hemisphere is semi-conducting material.
Further, the material of the big hemisphere and small hemisphere is zinc oxide material, gallium nitride material or carbofrax material
In any one.
Further, the material of the big hemisphere and small hemisphere is gallium nitride material.
The present invention improves the construction design method of LED light extraction efficiency, concretely comprises the following steps：
Step 1. builds one on the basis of time-domain finite difference, using FDTD in Rsoft softwares and carries hemisphere
The LED models of photonic crystal complicated periodic structure, it is included in the large and small hemispheres photonic crystal that tetragonal is designed on p type semiconductor layer
Multiple periodic array.
Step 2. calculates evolution of the light inside LED structure based on Finite-Difference Time-Domain Method, by being brought out on record cast
The intensity for the light penetrated, obtain final light extraction efficiency；
Step 3. passes through to hemisphere photonic crystal complicated periodic structure parameter, including large and small half radius of a ball, tetragonal constant
Etc. optimizing, the high light extraction efficiency of comparison is obtained.
Simulation shows, in hemisphere photonic crystal complicated periodic structure, big hemispherical diameter is in 1200 ± 50nm, small hemispherical diameter
360 ± 20nm, tetragonal constant have high light extraction efficiency in 1500 ± 50nm.
Compared with prior art, the beneficial effects of the invention are as follows：In order to improve light extraction efficiency, the present invention designs a kind of half
Ball photonic crystal complicated periodic structure, model is established by Finite-Difference Time-Domain Method and calculated, then carry out parameter optimization, selected
Suitable structural parameters improve LED light emission rates.Particularly, the chip structure that the present invention designs, it is followed successively by from bottom to top
Sapphire Substrate, cushion, n-type semiconductor layer, MQW multiple quantum well layers, p type semiconductor layer.Except bottom boundary condition is metal
Speculum PEC, other other five face boundary conditions are perfect domination set PML.Wherein, pros are devised on p type semiconductor layer
The big hemisphere of lattice and the multiple periodic array of small hemisphere photonic crystal.As a result show：The light extraction efficiency of common LED is 3.25%, multiple
Periodic photonic crystal structure LED light extraction efficiency is 27.1%, and multiple periodic photonic crystal structure LED light extraction efficiency is relative to common
LED about improves 8.3 times or so, and the LED light extraction efficiency of this photonic crystal complicated periodic structure is higher, and this is simple in construction,
It is easy to process.
Brief description of the drawings
Fig. 1 is the LED structure schematic diagram of an embodiment of the present invention.
Fig. 2 is used large and small hemispheres photonic crystal on p type semiconductor layer in the LED structure of an embodiment of the present invention
Complicated periodic structure schematic front view.
Fig. 3 be an embodiment of the present invention LED structure in used by p type semiconductor layer large and small hemispheres photonic crystal answer
Cycle overlooks partial schematic diagram.
In figure：1- Sapphire Substrates, 2- cushions, 3-N type semiconductor layers, 4- multiple quantum well layers, 5-P type semiconductor layers,
The big hemisphere of 6-, the small hemisphere of 7-.
Embodiment
The present invention is described in further detail with reference to the accompanying drawings and detailed description, but protection scope of the present invention
It is not limited to this.
A kind of high light-emitting efficiency diode with hemisphere photonic crystal complicated periodic structure, include as shown in Figure 1 to lower and
On the Sapphire Substrate 1, cushion 2, n type semiconductor layer 3, multiple quantum well layer 4 and the p type semiconductor layer 5 that are sequentially connected.
As shown in Fig. 2 the p type semiconductor layer 5 is provided with the hemisphere photonic crystal complicated periodic structure array of tetragonal；
The hemisphere photonic crystal complicated periodic structure array includes some big hemisphere 6 and small hemisphere 7, and the diameter of the big hemisphere 6 is more than
The diameter of small hemisphere 7.
As shown in figure 3, pros of the big hemisphere 6 using lattice constant as a arrange, the small hemisphere 7 is also normal with lattice
Number is evenly arranged in the arrangement of big hemisphere 6 for a square arrangement, and the adjacent big hemisphere 6 and small hemisphere 7 are spaced apart
Form rounded projections arranged.In rounded projections arranged, the side between two adjacent big hemisphere 6 is a, it is preferred that the big hemisphere 6
Side between small hemisphere 7 is
6 a diameter of 1200 ± 50nm of big hemisphere, small 7 a diameter of 360 ± 20nm of hemisphere, the tetragonal are normal
Number a is 1500 scholar 50nm.
The material of the big hemisphere 6 and small hemisphere 7 is semi-conducting material.Preferably, the big hemisphere 6 and small hemisphere 7
Material is any one in zinc oxide material, gallium nitride material or carbofrax material.
The construction design method of LED light extraction efficiency is improved, specifically includes following steps：
Step 1. builds one on the basis of time-domain finite difference, using FDTD in Rsoft softwares and carries hemisphere
The LED models of photonic crystal complicated periodic structure, it is included on p type semiconductor layer and designs the big hemisphere of tetragonal and small hemisphere light
The multiple periodic array of sub- crystal.
Step 2. calculates evolution of the light inside LED structure based on Finite-Difference Time-Domain Method, by being brought out on record cast
The intensity for the light penetrated, obtain final light extraction efficiency；
Step 3. passes through to hemisphere photonic crystal complicated periodic structure parameter, including large and small half radius of a ball, tetragonal constant
Etc. optimizing, the high light extraction efficiency of comparison is obtained.
By following examples contrast draw, in embodiment two after optimization big 6 a diameter of 1200nm of hemisphere, institute
Small 7 a diameter of 360nm of hemisphere is stated, the tetragonal constant is 1500nm, and the material of the big hemisphere 6 and small hemisphere 7 is nitrogen
Highest light extraction efficiency is obtained when changing gallium material as 27.1%.
Embodiment one
A kind of high light-emitting efficiency diode with hemisphere photonic crystal complicated periodic structure, including to it is lower and on be sequentially connected
Sapphire Substrate 1, cushion 2, n type semiconductor layer 3, multiple quantum well layer 4 and p type semiconductor layer 5.
The p type semiconductor layer 5 is provided with the hemisphere photonic crystal complicated periodic structure array of tetragonal；The hemisphere light
Sub- crystal complicated periodic structure array includes some big hemisphere 6 and small hemisphere 7, and the diameter for doing big hemisphere 6 is more than small hemisphere 7
Diameter.
Pros of the big hemisphere 6 using lattice constant as a arrange, the small hemisphere 7 and the pros using lattice constant as a
Arrangement is evenly arranged in the arrangement of big hemisphere 6, and the adjacent big hemisphere 6 and small hemisphere 7 are spaced apart composition triangle
Arrangement.In rounded projections arranged, the side between two adjacent big hemisphere 6 is a, it is preferred that the big hemisphere 6 and small hemisphere 7
Between side be
Pass through following steps：LED structure model is established based on Finite-Difference Time-Domain Method；Design the big smaller part of p type semiconductor layer
Ball photonic crystal complicated periodic structure initial parameter, carry out primary Calculation；Processing is optimized with FDTD algorithms, obtains optimal result
Parameter；According to conventional wafer growing method, growing sapphire substrate 1 successively, cushion 2, n type semiconductor layer 3, MQW Multiple-quantums
Well layer 4, p type semiconductor layer 5；P type semiconductor layer 5 is that material is sowed in nitridation, and simple zinc oxide material is designed this layer of upper surface
Big hemisphere 6 and small hemisphere 7 photonic crystal complicated periodic structure.In order to which the effect of the structure is better described, the present invention uses
Result parameter after optimization, unit big 6 a diameter of 1180nm of hemisphere, small 7 a diameter of 340nm of hemisphere, tetragonal constant a be
1450nm, the light extraction efficiency that the structure so optimized calculates are 16.25%.
Embodiment two
A kind of high light-emitting efficiency diode with hemisphere photonic crystal complicated periodic structure, including to it is lower and on be sequentially connected
Sapphire Substrate 1, cushion 2, n type semiconductor layer 3, multiple quantum well layer 4 and p type semiconductor layer 5.
The p type semiconductor layer 5 is provided with the hemisphere photonic crystal complicated periodic structure array of tetragonal；The hemisphere light
Sub- crystal complicated periodic structure array includes some big hemisphere 6 and small hemisphere 7, and the diameter for doing big hemisphere 6 is more than small hemisphere 7
Diameter.
Pros of the big hemisphere 6 using lattice constant as a arrange, the small hemisphere 7 and the pros using lattice constant as a
Arrangement is evenly arranged in the arrangement of big hemisphere 6, and the adjacent big hemisphere 6 and small hemisphere 7 are spaced apart composition triangle
Arrangement.In rounded projections arranged, the side between two adjacent big hemisphere 6 is a, it is preferred that the big hemisphere 6 and small hemisphere 7
Between side be
Pass through following steps：LED structure model is established based on Finite-Difference Time-Domain Method；Design the big smaller part of p type semiconductor layer
Ball photonic crystal complicated periodic structure initial parameter, carry out primary Calculation；Processing is optimized with FDTD algorithms, obtains optimal result
Parameter；According to conventional wafer growing method, growing sapphire substrate 1 successively, cushion 2, n type semiconductor layer 3, MQW Multiple-quantums
Well layer 4, p type semiconductor layer 5；P type semiconductor layer 5 is that material is sowed in nitridation, and simple gallium nitride material is designed this layer of upper surface
Big hemisphere 6 and small hemisphere 7 photonic crystal complicated periodic structure.In order to which the effect of the structure is better described, the present invention uses
Result parameter after optimization, the big hemispherical diameter of unit is 1200nm, small hemispherical diameter is 360nm, and tetragonal constant is
1500nm, the light extraction efficiency that the structure so optimized calculates are 27.1%.
Embodiment three
A kind of high light-emitting efficiency diode with hemisphere photonic crystal complicated periodic structure, including to it is lower and on be sequentially connected
Sapphire Substrate 1, cushion 2, n type semiconductor layer 3, multiple quantum well layer 4 and p type semiconductor layer 5.
The p type semiconductor layer 5 is provided with the hemisphere photonic crystal complicated periodic structure array of tetragonal；The hemisphere light
Sub- crystal complicated periodic structure array includes some big hemisphere 6 and small hemisphere 7, and the diameter for doing big hemisphere 6 is more than small hemisphere 7
Diameter.
Pros of the big hemisphere 6 using lattice constant as a arrange, the small hemisphere 7 and the pros using lattice constant as a
Arrangement is evenly arranged in the arrangement of big hemisphere 6, and the adjacent big hemisphere 6 and small hemisphere 7 are spaced apart composition triangle
Arrangement.In rounded projections arranged, the side between two adjacent big hemisphere 6 is a, it is preferred that the big hemisphere 6 and small hemisphere 7
Between side be
Pass through following steps：LED structure model is established based on Finite-Difference Time-Domain Method；Design the big smaller part of p type semiconductor layer
Ball photonic crystal complicated periodic structure initial parameter, carry out primary Calculation；Processing is optimized with FDTD algorithms, obtains optimal result
Parameter；According to conventional wafer growing method, growing sapphire substrate 1 successively, cushion 2, n type semiconductor layer 3, MQW Multiple-quantums
Well layer 4, p type semiconductor layer 5；P type semiconductor layer 5 is that material is sowed in nitridation, and simple carbofrax material is designed this layer of upper surface
Big hemisphere 6 and small hemisphere 7 photonic crystal complicated periodic structure.In order to which the effect of the structure is better described, the present invention uses
Result parameter after optimization, the big hemispherical diameter of unit is 1250nm, small hemispherical diameter is 380nm, and tetragonal constant is
1550nm, the light extraction efficiency that the structure so optimized calculates are 26.1%.
It should be appreciated that although this specification is described according to each embodiment, not each embodiment only includes one
Individual independent technical scheme, this narrating mode of specification is only that those skilled in the art will should say for clarity
Bright book is as an entirety, and the technical solutions in the various embodiments may also be suitably combined, and forming those skilled in the art can be with
The other embodiment of understanding.
Those listed above is a series of to describe illustrating only for possible embodiments of the invention in detail,
They simultaneously are not used to limit the scope of the invention, all equivalent embodiments made without departing from skill spirit of the present invention or change
It should be included in the scope of the protection.
Claims (9)
- A kind of 1. high light-emitting efficiency diode with hemisphere photonic crystal complicated periodic structure, it is characterised in that including to lower and On the Sapphire Substrate (1), cushion (2), n type semiconductor layer (3), multiple quantum well layer (4) and the p type semiconductor layer that are sequentially connected (5)；The p type semiconductor layer (5) is provided with the hemisphere photonic crystal complicated periodic structure array of tetragonal；The hemisphere photon Crystal complicated periodic structure array includes some big hemisphere (6) and small hemisphere (7), and the diameter of the big hemisphere (6) is more than small hemisphere (7) diameter；Pros of the big hemisphere (6) using lattice constant as a arrange, the small hemisphere (7) and the pros using lattice constant as a Arrangement is evenly arranged in the arrangement of big hemisphere (6), and the adjacent big hemisphere (6) and small hemisphere (7) are spaced apart composition Rounded projections arranged.
- 2. the high light-emitting efficiency diode according to claim 1 with hemisphere photonic crystal complicated periodic structure, its feature It is, in rounded projections arranged, the side between two adjacent big hemisphere (6) is a, between big hemisphere (6) and small hemisphere (7) While it is
- 3. the high light-emitting efficiency diode according to claim 1 with hemisphere photonic crystal complicated periodic structure, its feature It is, a diameter of 1200 ± 50nm of the big hemisphere (6), a diameter of 360 ± 20nm of the small hemisphere (7).
- 4. the high light-emitting efficiency diode according to claim 3 with hemisphere photonic crystal complicated periodic structure, its feature It is, a diameter of 1200nm of the big hemisphere (6), a diameter of 360nm of the small hemisphere (7).
- 5. the high light-emitting efficiency diode according to claim 3 with hemisphere photonic crystal complicated periodic structure, its feature It is, the tetragonal constant a is 1500 scholar 50nm.
- 6. the high light-emitting efficiency diode according to claim 5 with hemisphere photonic crystal complicated periodic structure, its feature It is, the tetragonal constant is 1500nm.
- 7. the high light-emitting efficiency diode according to claim 1 with hemisphere photonic crystal complicated periodic structure, its feature It is, the material of the big hemisphere (6) and small hemisphere (7) is semi-conducting material.
- 8. the high light-emitting efficiency diode according to claim 7 with hemisphere photonic crystal complicated periodic structure, its feature It is, the material of the big hemisphere (6) and small hemisphere (7) is appointing in zinc oxide material, gallium nitride material or carbofrax material Meaning is a kind of.
- 9. the high light-emitting efficiency diode according to claim 8 with hemisphere photonic crystal complicated periodic structure, its feature It is, the material of the big hemisphere (6) and small hemisphere (7) is gallium nitride material.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109980058A (en) * | 2019-02-28 | 2019-07-05 | 江苏大学 | A kind of high light-emitting efficiency diode with airport photon crystal structure |
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| CN101814562A (en) * | 2010-04-21 | 2010-08-25 | 哈尔滨工业大学 | LED with two-dimensional photonic crystals |
| JP2016044273A (en) * | 2014-08-25 | 2016-04-04 | 国立大学法人 筑波大学 | Polymer spherical array and method for producing the same |
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