CN109980058A - A kind of high light-emitting efficiency diode with airport photon crystal structure - Google Patents
A kind of high light-emitting efficiency diode with airport photon crystal structure Download PDFInfo
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- CN109980058A CN109980058A CN201910151621.2A CN201910151621A CN109980058A CN 109980058 A CN109980058 A CN 109980058A CN 201910151621 A CN201910151621 A CN 201910151621A CN 109980058 A CN109980058 A CN 109980058A
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- 239000013078 crystal Substances 0.000 title claims abstract description 45
- 239000004065 semiconductor Substances 0.000 claims abstract description 45
- 239000004038 photonic crystal Substances 0.000 claims abstract description 29
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 11
- 239000010980 sapphire Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000003491 array Methods 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 11
- 238000000605 extraction Methods 0.000 abstract description 31
- 238000000034 method Methods 0.000 description 14
- 230000000694 effects Effects 0.000 description 6
- 238000005457 optimization Methods 0.000 description 5
- 238000004364 calculation method Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000011084 recovery Methods 0.000 description 4
- 239000011148 porous material Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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Abstract
The present invention provides a kind of high light-emitting efficiency diode with airport photon crystal structure, including sequentially connected Sapphire Substrate from bottom to top, buffer layer, n type semiconductor layer, multiple quantum well layer, p type semiconductor layer；The p type semiconductor layer is equipped with airport photonic crystal arrays, and the airport photonic crystal arrays include multiple airports；The depth of the airport extends downward into multiple quantum well layer from the upper surface of p type semiconductor layer.The light extraction efficiency of airport photon crystal structure LED of the present invention is 38.56%, and the light extraction efficiency of common LED is 3.26%, and airport photon crystal structure LED light extraction efficiency of the present invention about improves 11.8 times or so relative to common LED, and structure is simple.
Description
Technical field
The invention belongs to LED technology fields, and in particular to a kind of high light-emitting efficiency with airport photon crystal structure
Diode.
Background technique
Light-Emitting Diode is that one kind can directly carry out luminous device by electro-optic conversion, and luminescence mechanism is to utilize
Semiconductor material is formed by the progress recombination radiation of the electron hole pair in PN junction and shines.LED illumination light source and traditional at present
Lighting source is compared, and is had many advantages, such as that high-efficient, the service life is long, safe and environmentally protective, has been become the forth generation of the mankind
Lighting source, LED have a wide range of applications in terms of automobile, traffic signal, display screen, electronic equipment and illumination.Due to preparation
Light emitting diode semiconductor material and air refractive index it is bigger, light can occur anti-in complete on the two interface
It penetrates and returns in semiconductor, so that most of light energy is bound in inside semiconductor；And light is penetrating interface
Shi Fasheng Fresnel reflection also inevitably results in the loss of energy.For the GaN base blue light of no any surface texture
LED, top light extraction efficiency LEE only 4% or so.In view of the refractive index of GaN (n ≈ 2.5) and air, light escape cone faces
Boundary angle is about 23, can only be run away from LED less than the light of critical angle.Therefore, total reflection is reduced, escape light cone is increased
Critical angle becomes the effective means for improving extraction efficiency.By the surface-texturing on surface, the reflection of interior lights can be inhibited simultaneously
Scatter light upwards.It is proposed that photonic crystal just causes difference since photonic crystal (PC) from E.Yablonovitch in 1987
The interest of researcher.The special construction of the height index dielectric of periodic distribution make photonic crystal can be used to enhance it is spontaneous
Radiation or the light extraction efficiency for improving solid state light emitter.In recent years, increase photonic crystal on surface to obtain to improve the light extraction efficiency of LED
Extensive concern.
Photonic crystal is the dielectric substance periodic arrangement by different refractivity and the artificial crystal formed.Photonic crystal
It is applied to LED, due to its distinctive forbidden photon band effect, on the one hand the guided wave mode for dropping into forbidden band can be made directly to be coupled
As radiation mode, penetrates and enter air；On the other hand, if luminous frequency is located on photonic crystal band, photon is brilliant
Body can make these Mode Couplings become radiation mode by Bragg diffraction, achieve the purpose that improving extraction efficiency.Therefore, light
The preparation of sub- crystal has great importance to the light extraction efficiency of promotion." increase hair disclosed in Chinese patent CN101916805A
The concentric photonic crystal structure of optical diode outer luminous efficiency ", propose a kind of air or low-index material and coating or layer
The closed-loop that medium ITO is constituted is round or rectangular configuration come the light extraction efficiency for improving LED, is 3 times of not photonic crystal.In
" a kind of high light-emitting efficiency diode with hemisphere photonic crystal complicated periodic structure " disclosed in state patent CN107464866A,
Array answers periodic photonic crystal structure to improve the light extraction efficiency of LED, although light extraction efficiency is on light output surface p-type GaN
It improves, but is not very high, it is therefore desirable to further increase the light emission rate of diode.
Summary of the invention
In view of the above-mentioned problems, the present invention provides a kind of high light-emitting efficiency diode with airport photon crystal structure,
Enhance the light extraction efficiency of light emitting diode using airport photon crystal structure.In order to improve light extraction efficiency, the present invention is main
It is to etch cylindrical air hole photonic crystal in light output surface, model is established by Finite-Difference Time-Domain Method and is calculated, then
Parameter optimization is carried out, selects suitable structural parameters to improve LED light emission rate.Particularly, the chip structure that the present invention designs,
It is followed successively by Sapphire Substrate, buffer layer, n-type semiconductor layer, MQW multiple quantum well layer, p type semiconductor layer from bottom to top.The bottom of except
End boundary condition is metallic mirror PEC, other other five face boundary conditions are perfect domination set PML.Wherein, p-type is partly led
Body layer interior surface etches cylindrical air hole photonic crystal.
The technical solution adopted by the present invention to solve the technical problems is: a kind of height with airport photon crystal structure
Light extraction efficiency diode, including sequentially connected Sapphire Substrate from bottom to top, buffer layer, n type semiconductor layer, multiple quantum wells
Layer, p type semiconductor layer；
The p type semiconductor layer is equipped with airport photonic crystal arrays, and the airport photonic crystal arrays include more
A airport；
The depth of the airport extends downward into multiple quantum well layer from the upper surface of p type semiconductor layer.
In above scheme, the airport is the cylindrical air holes of triangle arrangement.
Further, the air pore radius of the airport photonic crystal arrays be 312 ± 20nm, depth be 300 ±
10nm, lattice constant are 1040 scholar 50nm.
Further, the air pore radius is 312nm, depth 300nm, lattice constant 1040nm.
In above scheme, the material of the p type semiconductor layer is that material is sowed in nitridation.
In above scheme, the bottom end boundary condition of the diode is metallic mirror, remaining five face boundary condition is
Perfect domination set.
Compared with prior art, the beneficial effects of the present invention are: the present invention is followed successively by Sapphire Substrate, buffering from bottom to top
Layer, n type semiconductor layer, multiple quantum well layer, p type semiconductor layer, the present invention etch in light output surface and justify to improve light extraction efficiency
The depth of column type airport photonic crystal, the airport extends downward into multiple quantum well layer from the upper surface of p type semiconductor layer
It is interior.In airport photon crystal structure, radius is in 312 ± 20nm, and 300 ± 10nm of depth, lattice constant is in 1040 scholar 50nm,
There is high light extraction efficiency.The air pore radius is 312nm, depth 300nm, lattice constant 1040nm, airport photon
The light extraction efficiency of crystal structure LED is 38.56%, and the light extraction efficiency of common LED is 3.26%, and airport photon of the present invention is brilliant
Body structure LED light extraction efficiency about improves 11.8 times or so relative to common LED, and the structure is simple.
Detailed description of the invention
Above-mentioned and/or additional aspect of the invention and advantage will become from the description of the embodiment in conjunction with the following figures
Obviously and it is readily appreciated that, in which:
Fig. 1 is schematic structural view of the invention.
Fig. 2 is the cross-sectional view of Fig. 1.
Fig. 3 is the top view of Fig. 1.
In figure: 1- Sapphire Substrate, 2- buffer layer, 3-N type semiconductor layer, 4- multiple quantum well layer, 5-P type semiconductor layer,
6- airport.
Specific embodiment
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached
The embodiment of figure description is exemplary, it is intended to is used to explain the present invention, and is not considered as limiting the invention.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
The orientation or positional relationship of the instructions such as " thickness ", "upper", "lower", " axial direction ", " radial direction ", "vertical", "horizontal", "inner", "outside"
To be based on the orientation or positional relationship shown in the drawings, be merely for convenience of description of the present invention and simplification of the description, rather than indicate or
It implies that signified device or element must have a particular orientation, be constructed and operated in a specific orientation, therefore should not be understood as
Limitation of the present invention.In addition, term " first ", " second " are used for description purposes only, it is not understood to indicate or imply phase
To importance or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be with
Explicitly or implicitly include one or more of the features.In the description of the present invention, the meaning of " plurality " is two or
Two or more, unless otherwise specifically defined.
In the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " fixation " etc.
Term shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can be machine
Tool connection, is also possible to be electrically connected；It can be directly connected, two members can also be can be indirectly connected through an intermediary
Connection inside part.For the ordinary skill in the art, above-mentioned term can be understood in this hair as the case may be
Concrete meaning in bright.
Fig. 1,2 and 3 show the high light-emitting efficiency diode of the present invention with airport photon crystal structure, have
The high light-emitting efficiency diode of airport photon crystal structure includes sequentially connected Sapphire Substrate 1 from bottom to top, buffer layer
2, n type semiconductor layer 3, multiple quantum well layer 4, p type semiconductor layer 5.
The p type semiconductor layer 5 is equipped with airport photonic crystal arrays, and the airport photonic crystal arrays include more
A airport 6；The depth of the airport 6 extends downward into multiple quantum well layer 4 from the upper surface of p type semiconductor layer 5.
The airport 6 is the cylindrical air holes of triangle arrangement.
The purpose of the present invention is improving the light extraction efficiency of light emitting diode, by being built based on Fdtd Method theory
Vertical airport photon crystal structure model, devises the airport photon crystal structure of triangular crystal lattice arrangement, utilizes FDTD algorithm
Different lattice constants, different etching depth, different radii size are carried out to calculate LED recovery rate, select optimal photonic crystal
Structure is designed the photon crystal structure parameter of optimum extraction rate chip, is included the following steps:
LED structure model is established based on Finite-Difference Time-Domain Method；
P type semiconductor layer airport photon crystal structure initial parameter is designed, primary Calculation is carried out；
1) processing is optimized with FDTD algorithm, obtains optimum structure parameter；
2) according to conventional wafer growing method, successively growing sapphire substrate 1, buffer layer 2, n type semiconductor layer 3, MQW are more
Quantum well layer 4, p type semiconductor layer 5；P type semiconductor layer is that material is sowed in nitridation, and simple cylindrical type is designed in this layer of upper surface
Airport photon crystal structure, and it is allowed to etch into multiple quantum well layer.The bottom end boundary condition of the diode is that metal is anti-
Mirror is penetrated, remaining five face boundary condition is perfect domination set.
In order to which the effect of the structure is better described, present invention employs the result parameter after optimization, 6 radius of airport exists
310 ± 20nm, 300 ± 10nm of depth, in 1000 scholar 50nm, the result that the structure optimized in this way calculates has well lattice constant
Effect.
Embodiment one
The purpose of the present invention is improving the light extraction efficiency of light emitting diode, by being built based on Fdtd Method theory
Vertical airport photon crystal structure model, devises the airport photon crystal structure of triangular crystal lattice arrangement, utilizes FDTD algorithm
Different lattice constants, different etching depth, different radii size are carried out to calculate LED recovery rate, select optimal photonic crystal
Structure is designed the photon crystal structure parameter of optimum extraction rate chip, is included the following steps:
LED structure model is established based on Finite-Difference Time-Domain Method；
P type semiconductor layer airport photon crystal structure initial parameter is designed, primary Calculation is carried out；
1) processing is optimized with FDTD algorithm, obtains optimum structure parameter；
2) according to conventional wafer growing method, successively growing sapphire substrate 1, buffer layer 2, n type semiconductor layer 3, MQW are more
Quantum well layer 4, p type semiconductor layer 5；P type semiconductor layer is that material is sowed in nitridation, and simple cylindrical type is designed in this layer of upper surface
Airport photon crystal structure, and it is allowed to etch into multiple quantum well layer.The bottom end boundary condition of the diode is that metal is anti-
Mirror is penetrated, remaining five face boundary condition is perfect domination set.
In order to which the effect of the structure is better described, the present embodiment 1 uses the result parameter after optimization, airport 6 half
Diameter is in 280nm, and depth 270nm, lattice constant is in 900nm, light extraction efficiency 25.53%.
Embodiment two
The purpose of the present invention is improving the light extraction efficiency of light emitting diode, by being built based on Fdtd Method theory
Vertical airport photon crystal structure model, devises the airport photon crystal structure of triangular crystal lattice arrangement, utilizes FDTD algorithm
Different lattice constants, different etching depth, different radii size are carried out to calculate LED recovery rate, select optimal photonic crystal
Structure is designed the photon crystal structure parameter of optimum extraction rate chip, is included the following steps:
LED structure model is established based on Finite-Difference Time-Domain Method；
P type semiconductor layer airport photon crystal structure initial parameter is designed, primary Calculation is carried out；
1) processing is optimized with FDTD algorithm, obtains optimum structure parameter；
2) according to conventional wafer growing method, successively growing sapphire substrate 1, buffer layer 2, n type semiconductor layer 3, MQW are more
Quantum well layer 4, p type semiconductor layer 5；P type semiconductor layer is that material is sowed in nitridation, and simple cylindrical type is designed in this layer of upper surface
Airport photon crystal structure, and it is allowed to etch into multiple quantum well layer.The bottom end boundary condition of the diode is that metal is anti-
Mirror is penetrated, remaining five face boundary condition is perfect domination set.
In order to which the effect of the structure is better described, the present embodiment 2 uses the result parameter after optimization, and radius exists
312nm, depth 300nm, lattice constant is in 1040nm, light extraction efficiency 38.56%.
Embodiment three
The purpose of the present invention is improving the light extraction efficiency of light emitting diode, by being built based on Fdtd Method theory
Vertical airport photon crystal structure model, devises the airport photon crystal structure of triangular crystal lattice arrangement, utilizes FDTD algorithm
Different lattice constants, different etching depth, different radii size are carried out to calculate LED recovery rate, select optimal photonic crystal
Structure is designed the photon crystal structure parameter of optimum extraction rate chip, is included the following steps:
LED structure model is established based on Finite-Difference Time-Domain Method；
P type semiconductor layer airport photon crystal structure initial parameter is designed, primary Calculation is carried out；
1) processing is optimized with FDTD algorithm, obtains optimum structure parameter；
2) according to conventional wafer growing method, successively growing sapphire substrate 1, buffer layer 2, n type semiconductor layer 3, MQW are more
Quantum well layer 4, p type semiconductor layer 5；P type semiconductor layer is that material is sowed in nitridation, and simple cylindrical type is designed in this layer of upper surface
Airport photon crystal structure, and it is allowed to etch into multiple quantum well layer.The bottom end boundary condition of the diode is that metal is anti-
Mirror is penetrated, remaining five face boundary condition is perfect domination set.
In order to which the effect of the structure is better described, the present embodiment 3 uses the result parameter after optimization, and radius exists
350nm, depth 330nm, lattice constant is in 1100nm, light extraction efficiency 37.54%.
Although not each embodiment only includes one it should be appreciated that this specification describes according to various embodiments
A independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should will say
As a whole, the technical solutions in the various embodiments may also be suitably combined for bright book, and forming those skilled in the art can be with
The other embodiments of understanding.
The series of detailed descriptions listed above are illustrated only for possible embodiments of the invention,
The protection scope that they are not intended to limit the invention, it is all without departing from equivalent embodiment made by technical spirit of the present invention or change
It should all be included in the protection scope of the present invention.
Claims (6)
1. a kind of high light-emitting efficiency diode with airport photon crystal structure, which is characterized in that including from bottom to top according to
The Sapphire Substrate (1) of secondary connection, buffer layer (2), n type semiconductor layer (3), multiple quantum well layer (4), p type semiconductor layer (5)；
The p type semiconductor layer (5) is equipped with airport photonic crystal arrays, and the airport photonic crystal arrays include multiple
Airport (6)；
The depth of the airport (6) extends downward into multiple quantum well layer (4) from the upper surface of p type semiconductor layer (5).
2. the high light-emitting efficiency diode according to claim 1 with airport photon crystal structure, which is characterized in that
The airport (6) is the cylindrical air holes of triangle arrangement.
3. the high light-emitting efficiency diode according to claim 2 with airport photon crystal structure, which is characterized in that
Airport (6) radius of the airport photonic crystal arrays is 312 ± 20nm, and depth is 300 ± 10nm, and lattice constant is
1040 scholar 50nm.
4. the high light-emitting efficiency diode according to claim 3 with airport photon crystal structure, which is characterized in that
Airport (6) radius is 312nm, depth 300nm, lattice constant 1040nm.
5. the high light-emitting efficiency diode according to claim 1 with airport photon crystal structure, which is characterized in that
The material of the p type semiconductor layer (5) is that material is sowed in nitridation.
6. the high light-emitting efficiency diode according to claim 1 with airport photon crystal structure, which is characterized in that
The bottom end boundary condition of the diode is metallic mirror, remaining five face boundary condition is perfect domination set.
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| CN201910151621.2A CN109980058A (en) | 2019-02-28 | 2019-02-28 | A kind of high light-emitting efficiency diode with airport photon crystal structure |
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| CN201910151621.2A CN109980058A (en) | 2019-02-28 | 2019-02-28 | A kind of high light-emitting efficiency diode with airport photon crystal structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111864019A (en) * | 2020-07-10 | 2020-10-30 | 武汉大学 | Flip light-emitting diode with embedded scattering layer and preparation method thereof |
| WO2021048624A1 (en) * | 2019-09-11 | 2021-03-18 | Hong Kong Beida Jade Bird Display Limited | Multi-color led pixel unit and micro-led display panel |
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| CN101110461A (en) * | 2007-07-31 | 2008-01-23 | 欧阳征标 | High efficiency light emitting diode with surface mini column array structure using diffraction effect |
| TW200919788A (en) * | 2007-09-03 | 2009-05-01 | Alps Electric Co Ltd | Diffraction grating light emitting diode |
| JP2011086853A (en) * | 2009-10-19 | 2011-04-28 | Kyoto Univ | Photonic crystal light-emitting diode |
| CN106653967A (en) * | 2016-12-29 | 2017-05-10 | 中国科学院半导体研究所 | Method for preparing single photon source through quantum well and quantum dot resonance energy transfer |
| CN107464866A (en) * | 2017-07-26 | 2017-12-12 | 江苏大学 | A kind of high light-emitting efficiency diode with hemisphere photonic crystal complicated periodic structure |
-
2019
- 2019-02-28 CN CN201910151621.2A patent/CN109980058A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101110461A (en) * | 2007-07-31 | 2008-01-23 | 欧阳征标 | High efficiency light emitting diode with surface mini column array structure using diffraction effect |
| TW200919788A (en) * | 2007-09-03 | 2009-05-01 | Alps Electric Co Ltd | Diffraction grating light emitting diode |
| JP2011086853A (en) * | 2009-10-19 | 2011-04-28 | Kyoto Univ | Photonic crystal light-emitting diode |
| CN106653967A (en) * | 2016-12-29 | 2017-05-10 | 中国科学院半导体研究所 | Method for preparing single photon source through quantum well and quantum dot resonance energy transfer |
| CN107464866A (en) * | 2017-07-26 | 2017-12-12 | 江苏大学 | A kind of high light-emitting efficiency diode with hemisphere photonic crystal complicated periodic structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2021048624A1 (en) * | 2019-09-11 | 2021-03-18 | Hong Kong Beida Jade Bird Display Limited | Multi-color led pixel unit and micro-led display panel |
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Application publication date: 20190705 |