CN105449056A - High-light-efficiency spot-evening LED chip with sapphire substrate and preparation method of LED chip - Google Patents
High-light-efficiency spot-evening LED chip with sapphire substrate and preparation method of LED chip Download PDFInfo
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- CN105449056A CN105449056A CN201511022233.2A CN201511022233A CN105449056A CN 105449056 A CN105449056 A CN 105449056A CN 201511022233 A CN201511022233 A CN 201511022233A CN 105449056 A CN105449056 A CN 105449056A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
- H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
The invention provides a high-light-efficiency spot-evening LED chip with a sapphire substrate and a preparation method of the LED chip. The LED chip comprises a sapphire substrate layer, an N-type GaN layer, a multiple-quantum-well luminous layer, a P-type GaN layer and a current expanding layer from the top down sequentially, wherein inner concave micro-lens structures are formed in the sapphire substrate layer. The preparation method comprises the following steps: (1) growing the N-type GaN layer, the multiple-quantum-well luminous layer and the P-type GaN layer on the sapphire substrate sequentially; (2) forming the inner concave micro-lens structures in a surface of the sapphire substrate layer via femto-second laser pulse shock; (3) conducting chemical etching on the inner concave micro-lens structures; (4) preparing the current expanding layer on the P-type GaN layer on an epilayer; and (5) conducting electrode etching on a wafer from the current expanding layer to the N-type GaN layer, and preparing a P metal electrode and an N metal electrode on a P electrode table surface and an N electrode table surface respectively. The LED chip prepared according to the preparation method has the advantages that the light extraction efficiency is remarkably improved; the light-emitting angle is expanded; and the beams emitted by an LED are evened.
Description
Technical field
The present invention relates to a kind of specular removal can the LED chip structure and preparation method thereof of even spot Sapphire Substrate, belongs to LED field of luminescent technology.
Background technology
The appearance of LED is a revolution for conventional light source, LED is called as forth generation lighting source or green light source, there is the features such as energy-saving and environmental protection, the life-span is long, volume is little, be widely used in the fields such as various instruction, display, decoration, backlight, general lighting and urban landscape.Current LED application market has a extensive future, and LED product is mainly used in backlight, color screen, the large field of room lighting three.Along with the continuation of industry develops, the leap of technology breaks through, wideling popularize of application, and the light efficiency of LED is also improving constantly, but the development of LED also also exists some bottlenecks simultaneously, as light efficiency is still inadequate, and the unequal problem of emergent light spot.Thus, people, by continuous experimental study, achieve certain effect.
Microlens array refers to by the micro lens of a series of diameter between 10-100 μm, the array arranged in a certain way.Lenticule has the purposes such as light splitting, beam homogenization, parallel photoetching, since the eighties in 20th century is born, utilize microlens array to realize the transmitting of light beam, focusing, deviation, segmentation, compound, switch, coupling and reception etc., have lightweight, volume is little, flexible design, can array, be easy to the advantage such as integrated.The preparation of micro lens technology adds dry etching mainly with photoetching or wet etching method obtains, and also has the important technology realizing microlens fabrication by the COULOMB EXPLOSION mechanism of action in addition, as femtosecond Laser lithography.
Photon journal the 38th volume the 3rd phase " femtosecond laser and acid etch method make concave surface microlens array ", utilize COULOMB EXPLOSION mechanism when ultra-short pulse laser and transparent medium effect, K9 optical glass is prepared lenticule dot matrix, the conglobate microexplosion hole of shape, centre is dark, edge is shallow, then utilize the feature that hydrofluoric acid etches optical glass, etch-polish is carried out to surface, microexplosion hole, thus obtains the neat surface interface of smoother.By recognizing the COULOMB EXPLOSION mechanism of action of femtosecond laser to the study of this article, comply with to move to and adopt this application to carry out light splitting, the beam homogenization of light in LED Sapphire Substrate.
Semiconductor journal the 28th volume supplementary issue " the lenticular coarsening technique of upside-down mounting GaN base light emitting diode matrix ", adopt inductive couple plasma (ICP) dry etching technology to prepare array lenticule at sapphire surface, realize the alligatoring of inverted structure GaN base LED exiting surface.Relative to common inverted structure, the alligatoring of array micro-lens surface can make LED extraction efficiency improve about 50%.This article prepares litho pattern at sapphire surface, is prepared in hemispheric microlens array, improves light efficiency, but can not play the effect expanding light emitting anger, make the homogenize of LED light spot by the backflow of photoresist thermal resistance.
Luminous journal the 30th volume the 1st phase " the LED light performance based on microlens array ", establish a kind of encapsulating structure of great power LED, secondary optical design adopts microlens array technology, uses Image Synthesis by Ray Tracing to have studied the optical property of this encapsulating structure.Analysis result shows: utilize microlens array technology significantly can improve the optical property of LED, improves and gets optical efficiency, the brightness decay of LED can be reduced by more than 12%, obtain good effect.The method introduces microlens array technology on the secondary optical design of LED encapsulation structure, effectively can reduce brightness decay, but can not play useful effect for the luminous efficiency of luminescence chip own and hot spot luminous intensity distribution.
Summary of the invention
Still not high enough for existing LED chip luminous efficiency, emergent light hot spot problem pockety after encapsulation, the invention provides a kind of specular removal can even spot sapphire substrate LED chip, provides a kind of preparation method of this LED chip simultaneously.
Specular removal of the present invention can even spot sapphire substrate LED chip, by the following technical solutions:
This LED chip, comprise Sapphire Substrate layer, N-type GaN layer, multiple quantum well light emitting layer, P type GaN layer and current extending from top to bottom successively, current extending and N-type GaN layer are respectively arranged with P metal electrode and N metal electrode, Sapphire Substrate layer are provided with indent microlens structure.
Each indent lenticule in described indent microlens structure is arranged in array.
In described indent microlens structure, the lenticular horizontal direction diameter of single indent is 20-50 μm, and the vertical direction degree of depth is 3-10 μm.
Above-mentioned specular removal can the preparation method of even spot sapphire substrate LED chip, comprises the following steps:
(1) grown epitaxial layer on a sapphire substrate, described epitaxial loayer comprises N-type GaN layer, multiple quantum well light emitting layer and P type GaN layer successively;
(2) wafer with above-mentioned epitaxial loayer is inverted (wafer here refers to the total comprising substrate and epitaxial loayer), Sapphire Substrate face is impacted by femto-second laser pulse the indent microlens structure obtaining and be arranged in array;
(3) carry out chemical etching by concave microlens structure, polishing is carried out to the sapphire substrate surface after femto-second laser pulse impacts;
(4) there is the wafer of indent microlens structure just to put preparation, in the P type GaN layer of epitaxial loayer, prepare current extending by electron beam evaporation plating;
(5) in the enterprising column electrode etching of the wafer preparing current extending, be etched to N-type GaN layer by current extending, then on the P electrode table top obtained and N electrode table top, prepare P metal electrode and N metal electrode respectively.
The single pulse energy of the femtosecond laser in described step (2) is 80 μ J-120 μ J, and pulsewidth is 80fs-120fs.
Because the femto-second laser pulse duration only has femtosecond magnitude, in material, excited electron is by the release time of phonon by the form such as energy trasfer, conversion, thus avoid the impact of thermal diffusion, heat affected area is limited in the course of processing, avoid the existence of heat fusing, therefore the region around femtosecond laser photoetching hole can not be subject to thermal impact, and the edge in hole there will not be a large amount of melted materials.
Chemical etching in described step (3), be by sulfuric acid and phosphoric acid by volume 3:1 be mixed into mixed liquor, be heated to 250 DEG C-280 DEG C, whole wafer be immersed in mixed liquor, to be immersed in mixed liquor 4 hours-8 hours, then to rinse well with clear water.
In described step (5), P metal electrode and N metal electrode include reflection electrode layer and metal bonding layer.
The present invention adopts inverted structure, adopt femto-second laser pulse to impact according to COULOMB EXPLOSION principle and prepare a series of indent microlens structure at sapphire substrate surface (exiting surface), and do polishing by the method concave microlens array surface of chemical etching, the light extraction efficiency of LED chip is obtained significantly improve, and have and expand light emitting anger, homogenize LED transmitted beam, effect that hot spot is evenly spread, such chip can be widely used in the device architectures such as SMD encapsulation, COB encapsulation.
Accompanying drawing explanation
Fig. 1 is the epitaxial layer structure schematic diagram of growth in step of the present invention (1).
Fig. 2 is the vertical view of the indent microlens structure obtained in step of the present invention (2).
Fig. 3 is the end view of the indent microlens structure obtained in step of the present invention (2).
Fig. 4 is the lenticular smooth outgoing schematic diagram of indent obtained in step of the present invention (2).
Fig. 5 is that the specular removal prepared of the present invention can the structural representation of even spot sapphire substrate LED chip.
In figure, 1, Sapphire Substrate layer; 2, N-type GaN layer; 3, multiple quantum well light emitting layer; 4, P type GaN layer; 5, indent lenticule; 6, current extending; 7, N metal electrode; 8, P metal electrode; N0: air layer refractive index, n1: sapphire substrate LED chip refractive index.
Embodiment
Specular removal of the present invention can even spot sapphire substrate LED chip, as shown in Figure 5, comprises Sapphire Substrate layer 1, N-type GaN layer 2, multiple quantum well light emitting layer 3 and P type GaN layer 4 from top to bottom successively.The surface of Sapphire Substrate layer 1 is provided with indent microlens structure, and each indent lenticule in this structure is arranged in array, and the lenticular horizontal direction diameter of single indent is 20-50 μm, and the vertical direction degree of depth is 3-10 μm.Prepared by the mode that described indent microlens structure adopts femto-second laser pulse to impact, adopt the method for chemical etching to carry out polishing.Indent microlens structure has the effect of diffusion light beam, homogenize hot spot, and as Fig. 4 shows, the sapphire substrate LED chip layer that light is n1 from refractive index sends, and is the air layer of n0 through indent micro-lens surface directive refractive index.Current extending 6 and N-type GaN layer 2 are respectively arranged with P metal electrode 8 and N metal electrode 7.
Above-mentioned specular removal can the concrete preparation process of even spot sapphire substrate LED chip, comprises the following steps:
(1) by metal organic chemical vapor deposition (mocvd) (MOCVD) equipment, at Sapphire Substrate 1 growing epitaxial layers, as Fig. 1 shows, described epitaxial loayer comprises N-type GaN layer 2, multiple quantum well light emitting layer 3 and P type GaN layer 4 successively.
(2) wafer with above-mentioned epitaxial loayer is inverted, the mode that Sapphire Substrate face adopts femto-second laser pulse to impact, obtains the lenticule of indent one by one 5 be arranged in array, concave microlens array namely.Wherein this femtosecond laser is a kind of ultra-short pulse laser, and single pulse energy is 80-120 μ J, and pulsewidth is 80-120fs.Single indent lenticule diameter is in the horizontal direction 20-50 μm, and the degree of depth of vertical direction is 3-10 μm.
(3) method of chemical etching is adopted to carry out surface finish to the Sapphire Substrate 1 with the indent microlens structure be arranged in array.Specifically sulfuric acid and phosphoric acid are mixed into mixed liquor by the ratio of 3:1 by volume, and under the heating condition of 250-280 DEG C, whole wafer to be immersed in mixed liquor 4 hours-8 hours, then to rinse well with clear water.
(4) wafer of preparation indent microlens structure is just put, adopt electron beam evaporation technique, the P type GaN layer of epitaxial loayer prepares current extending 6.
(5) in the enterprising column electrode etching of the wafer having prepared current extending 6, be etched to N-type GaN layer 2 by dry etching by current extending 6, then on the P electrode table top obtained and N electrode table top, prepare P metal electrode 8 and N metal electrode 7 respectively.
Claims (7)
1. a specular removal can even spot sapphire substrate LED chip, comprise Sapphire Substrate layer, N-type GaN layer, multiple quantum well light emitting layer, P type GaN layer and current extending from top to bottom successively, current extending and N-type GaN layer are respectively arranged with P metal electrode and N metal electrode, it is characterized in that: Sapphire Substrate layer is provided with indent microlens structure.
2. specular removal according to claim 1 can even spot sapphire substrate LED chip, it is characterized in that: each indent lenticule in described indent microlens structure is arranged in array.
3. specular removal according to claim 1 can even spot sapphire substrate LED chip, it is characterized in that: in described indent microlens structure, the lenticular horizontal direction diameter of single indent is 20-50 μm, and the vertical direction degree of depth is 3-10 μm.
4. specular removal described in claim 1 can the preparation method of even spot sapphire substrate LED chip, it is characterized in that, comprises the following steps:
(1) grown epitaxial layer on a sapphire substrate, described epitaxial loayer comprises N-type GaN layer, multiple quantum well light emitting layer and P type GaN layer successively;
(2) wafer with above-mentioned epitaxial loayer is inverted, Sapphire Substrate face is impacted by femto-second laser pulse the indent microlens structure obtaining and be arranged in array;
(3) carry out chemical etching by concave microlens structure, polishing is carried out to the sapphire substrate surface after femto-second laser pulse impacts;
(4) there is the wafer of indent microlens structure just to put preparation, in the P type GaN layer of epitaxial loayer, prepare current extending by electron beam evaporation plating;
(5) in the enterprising column electrode etching of the wafer preparing current extending, be etched to N-type GaN layer by current extending, then on the P electrode table top obtained and N electrode table top, prepare P metal electrode and N metal electrode respectively.
5. specular removal can the preparation method of even spot sapphire substrate LED chip according to claim 1, it is characterized in that: the single pulse energy of the femtosecond laser in described step (2) is 80 μ J-120 μ J, and pulsewidth is 80fs-120fs.
6. specular removal can the preparation method of even spot sapphire substrate LED chip according to claim 1, it is characterized in that: the chemical etching in described step (3), be by sulfuric acid and phosphoric acid by volume 3:1 be mixed into mixed liquor, be heated to 250 DEG C-280 DEG C, whole wafer to be immersed in mixed liquor 4 hours-8 hours, then to rinse well with clear water.
7. specular removal can the preparation method of even spot sapphire substrate LED chip according to claim 1, it is characterized in that: in described step (5), P metal electrode and N metal electrode include reflection electrode layer and metal bonding layer.
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| CN107086260A (en) * | 2016-08-17 | 2017-08-22 | 中山大学 | A kind of flip LED chips structure and preparation method thereof |
| CN112951962A (en) * | 2021-01-28 | 2021-06-11 | 广东中图半导体科技股份有限公司 | Polygonal concave patterned substrate and LED epitaxial wafer |
| CN112968079A (en) * | 2020-07-08 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Light-emitting unit, display back plate and manufacturing method thereof, and chip and transferring method thereof |
| CN113296175A (en) * | 2021-05-25 | 2021-08-24 | 北京理工大学 | Method for processing micro-lens array with multiple numerical apertures |
| CN114937731A (en) * | 2022-04-29 | 2022-08-23 | 福建兆元光电有限公司 | Micro LED light projection chip and manufacturing method thereof |
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| CN112951962A (en) * | 2021-01-28 | 2021-06-11 | 广东中图半导体科技股份有限公司 | Polygonal concave patterned substrate and LED epitaxial wafer |
| CN113296175A (en) * | 2021-05-25 | 2021-08-24 | 北京理工大学 | Method for processing micro-lens array with multiple numerical apertures |
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| CN114937731A (en) * | 2022-04-29 | 2022-08-23 | 福建兆元光电有限公司 | Micro LED light projection chip and manufacturing method thereof |
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