CN107452615B - 一种电池片湿法刻蚀液 - Google Patents
一种电池片湿法刻蚀液 Download PDFInfo
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- 239000007788 liquid Substances 0.000 title claims abstract description 23
- 238000001039 wet etching Methods 0.000 title claims abstract description 6
- 238000005530 etching Methods 0.000 claims abstract description 33
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 22
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims abstract description 20
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 12
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 10
- 229960000583 acetic acid Drugs 0.000 claims abstract description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000012362 glacial acetic acid Substances 0.000 claims abstract description 7
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000000203 mixture Substances 0.000 claims abstract description 4
- 239000002253 acid Substances 0.000 claims description 5
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 claims 1
- 238000012876 topography Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- Condensed Matter Physics & Semiconductors (AREA)
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- Chemical Kinetics & Catalysis (AREA)
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Abstract
本发明公开了一种电池片湿法刻蚀液,该刻蚀液由如下重量比的成份组成:2‑5%硝酸,5‑8%冰醋酸,60‑65%磷酸,15‑20%BOE溶液和余量水,所述的BOE溶液是由25‑35份HF、20‑23份NH4F和余量水混合而成,且HF的浓度为45%,本发明的刻蚀液具有刻蚀速度快,刻蚀形貌均匀,平滑的优点。
Description
技术领域
本发明具体涉及一种电池片湿法刻蚀液,属于电池制造业技术领域。
背景技术
化学湿法刻蚀是利用刻蚀液与被刻蚀材料之间发生化学反应来去除被刻蚀材料以及含有高浓度杂质的再沉积层和亚表面裂缝中的杂质,目前HF是针对熔石英元件后处理主要采用的刻蚀液,利用HF酸与二氧化硅的反应,可以将加工引入的抛光粉杂质及其它污染物剥离,并去除或钝化元件表面和亚表面裂纹,从而在一定程度提高光学元件的激光损伤阈值,如中国专利公开号CN1778991A,但单独的HF开始刻蚀速度较快易给电池片的表面产生缺陷,且HF酸与二氧化硅反应的过程之中,随着刻蚀液中F离子的减少,反应速率会不断降低,直至最后不反应,完全影响刻蚀的速度和质量。
本发明就是基于此思路,选择了合适的材料,采用硝酸、冰醋酸和磷酸为基液,加入BOE刻蚀缓冲液,不仅可以提高刻蚀液的刻蚀质量,更有利于刻蚀速度的稳定,且硝酸、冰醋酸和磷酸的沸点相差较大,有利于分类回收利用,减少对环境的污染。
发明内容
本发明是为了克服现有背景技术中的不足之处,本发明提供了一种电池片湿法刻蚀液。
为实现上述目的,本发明提供如下技术方案:
一种电池片湿法刻蚀液,该刻蚀液由如下重量比的成份组成:2-5%硝酸,5-8%冰醋酸,60-65%磷酸,15-20%BOE溶液和余量水,其中,BOE溶液是由25-35份HF、20-23份NH4F和余量水配制而成。
优选的,所述的硝酸的浓度是30%,磷酸浓度是25%,HF的浓度是45%。
优选的,所述刻蚀液的使用温度为20-25℃。
与现有技术相比,本发明的有益效果是:
1.本发明中采用硝酸、冰醋酸和磷酸为基液的技术,刻蚀液可以分类回收利用,具有节省资源,保护环境的优点。
2.本发明中采用添加BOE溶液的技术,NH4F在此溶液中则作为缓冲剂存在,NH4F通过分解反应产生HF,从而维持了HF的恒定的浓度,具有刻蚀速度快,刻蚀质量好的优点。
具体实施方式
下面结合具体实施例对本发明做进一步的详细说明,以令本领域技术人员参照说明书文字能够据以实施。
实施例1
将质量分数为2%,浓度30%的硝酸,5%冰醋酸,60%的浓度25%的磷酸,混合均匀,然后向得到的混合酸中加入20%的由30份HF、20份NH4F和50份水混合的BOE溶液,搅拌均匀后加入13%的水,继续搅拌混合均匀,其中,HF的浓度是45%,将得到的刻蚀液温度调节至25℃后,将SiO2电池片样品,经过制绒、磷扩散后,在不需刻蚀的部分涂上保护层,然后将处理过的电池片浸入配制的刻蚀液中60S,取出后立即进行水洗,将样品表面残留药液充分洗净后干燥。
实施例2
本实施例的制备方法同实施例1,不同的是BOE溶液的质量分数是15%。
实施例3
本实施例的制备方法同实施例1,不同的是硝酸的质量分数是5%。
对实施例1-3的刻蚀液进行刻蚀性能的测试:每个实施例选取3组样进行刻蚀性能的测试,最后取平均值,测试结果如下:根据测试各样品刻蚀前后的膜厚计算得出,实施例1-3的刻蚀液的刻蚀速率分别为:1.732nm/s,1.543nm/s,1.745nm/s,经过对比刻蚀后的电池片的表面,实施例1-2的刻蚀液刻蚀的形貌较为均匀,平滑,这是由于添加的BOE溶液能与硝酸,冰醋酸和磷酸混酸液进行相互的配合、缓冲,添加的硝酸增加HF的刻蚀强度,冰醋酸和磷酸可以保持HF的刻蚀速度,BOE中的NH4F保持氟离子的浓度,相互配合使整个刻蚀过程快而稳的进行,实施例3由于硝酸的较多,导致刻蚀速度较快,刻蚀的形貌偏差。
尽管已经示出和描述了本发明的实施例,对于本领域的普通技术人员而言,可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型,本发明的范围由所附权利要求及其等同。
Claims (1)
1.一种电池片湿法刻蚀液,其特征在于:该刻蚀液由如下重量比的成份组成:2-5%硝酸,5-8%冰醋酸,60-65%磷酸,15-20%BOE溶液和余量水,其中,BOE溶液是由25-35份HF、20-23份NH4F和余量水配制而成;所述硝酸的浓度是30%,磷酸浓度是25%,HF的浓度是45%;所述刻蚀液的使用温度为20-25℃。
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CN103132078A (zh) * | 2011-11-30 | 2013-06-05 | 关东化学株式会社 | 蚀刻液、该蚀刻液的制造方法和使用该蚀刻液的蚀刻方法 |
CN105463462A (zh) * | 2014-09-30 | 2016-04-06 | 东友精细化工有限公司 | 用于银纳米线的蚀刻剂组合物 |
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CN103132078A (zh) * | 2011-11-30 | 2013-06-05 | 关东化学株式会社 | 蚀刻液、该蚀刻液的制造方法和使用该蚀刻液的蚀刻方法 |
CN105463462A (zh) * | 2014-09-30 | 2016-04-06 | 东友精细化工有限公司 | 用于银纳米线的蚀刻剂组合物 |
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