CN107437570B - 雪崩光电二极管及其制造方法 - Google Patents
雪崩光电二极管及其制造方法 Download PDFInfo
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- CN107437570B CN107437570B CN201610362765.9A CN201610362765A CN107437570B CN 107437570 B CN107437570 B CN 107437570B CN 201610362765 A CN201610362765 A CN 201610362765A CN 107437570 B CN107437570 B CN 107437570B
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- 229910052751 metal Inorganic materials 0.000 claims description 53
- 239000004020 conductor Substances 0.000 claims description 34
- 230000003667 anti-reflective effect Effects 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 230000007547 defect Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 238000010849 ion bombardment Methods 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
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- 239000000463 material Substances 0.000 description 9
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201610362765.9A CN107437570B (zh) | 2016-05-27 | 2016-05-27 | 雪崩光电二极管及其制造方法 |
Applications Claiming Priority (1)
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CN201610362765.9A CN107437570B (zh) | 2016-05-27 | 2016-05-27 | 雪崩光电二极管及其制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN107437570A CN107437570A (zh) | 2017-12-05 |
CN107437570B true CN107437570B (zh) | 2019-07-26 |
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CN201610362765.9A Active CN107437570B (zh) | 2016-05-27 | 2016-05-27 | 雪崩光电二极管及其制造方法 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109216495B (zh) * | 2018-10-24 | 2023-12-29 | 芯思杰技术(深圳)股份有限公司 | 雪崩光电探测器、制作方法以及激光雷达系统 |
US10854768B2 (en) * | 2018-12-20 | 2020-12-01 | Hewlett Packard Enterprise Development Lp | Optoelectronic component with current deflected to high-gain paths comprising an avalanche photodiode having an absorbing region on a p-doped lateral boundary, an n-doped lateral boundary and an amplifying region |
CN109860315B (zh) * | 2019-02-27 | 2021-04-02 | 吉林大学 | 一种雪崩光电二极管 |
CN114068754A (zh) * | 2021-12-29 | 2022-02-18 | 上海集成电路研发中心有限公司 | 双面雪崩光电二极管及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101546789A (zh) * | 2008-03-28 | 2009-09-30 | Jds尤尼弗思公司 | 半导体光电二极管及其制造方法 |
CN104247046A (zh) * | 2012-07-25 | 2014-12-24 | 惠普发展公司,有限责任合伙企业 | 具有缺陷辅助的硅吸收区域的雪崩光电二极管 |
JP5735321B2 (ja) * | 2011-03-28 | 2015-06-17 | 株式会社スペクトラテック | 光検出器用高電圧回路 |
-
2016
- 2016-05-27 CN CN201610362765.9A patent/CN107437570B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101546789A (zh) * | 2008-03-28 | 2009-09-30 | Jds尤尼弗思公司 | 半导体光电二极管及其制造方法 |
JP5735321B2 (ja) * | 2011-03-28 | 2015-06-17 | 株式会社スペクトラテック | 光検出器用高電圧回路 |
CN104247046A (zh) * | 2012-07-25 | 2014-12-24 | 惠普发展公司,有限责任合伙企业 | 具有缺陷辅助的硅吸收区域的雪崩光电二极管 |
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Effective date of registration: 20191204 Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: Shenzhen BYD Microelectronics Co., Ltd. Address before: BYD 518118 Shenzhen Road, Guangdong province Pingshan New District No. 3009 Patentee before: Biyadi Co., Ltd. |
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Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kwai Chung street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. |