CN107403812A - A kind of InGaAs detector arrays and preparation method thereof - Google Patents
A kind of InGaAs detector arrays and preparation method thereof Download PDFInfo
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- CN107403812A CN107403812A CN201710518435.9A CN201710518435A CN107403812A CN 107403812 A CN107403812 A CN 107403812A CN 201710518435 A CN201710518435 A CN 201710518435A CN 107403812 A CN107403812 A CN 107403812A
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- 229910000530 Gallium indium arsenide Inorganic materials 0.000 title claims abstract description 138
- 238000003491 array Methods 0.000 title claims abstract description 37
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 92
- 229910052751 metal Inorganic materials 0.000 claims abstract description 92
- 230000010287 polarization Effects 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 27
- 239000010703 silicon Substances 0.000 claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000011248 coating agent Substances 0.000 claims abstract description 20
- 238000000576 coating method Methods 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 18
- 239000003292 glue Substances 0.000 claims abstract description 15
- 238000011049 filling Methods 0.000 claims abstract description 8
- 238000005260 corrosion Methods 0.000 claims description 22
- 230000007797 corrosion Effects 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 17
- 235000012431 wafers Nutrition 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims description 10
- 238000005516 engineering process Methods 0.000 claims description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 8
- 238000005498 polishing Methods 0.000 claims description 8
- 229920006335 epoxy glue Polymers 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- 241001080929 Zeugopterus punctatus Species 0.000 claims description 6
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 5
- 239000011975 tartaric acid Substances 0.000 claims description 5
- 235000002906 tartaric acid Nutrition 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 4
- 238000002161 passivation Methods 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 238000010992 reflux Methods 0.000 claims description 3
- 230000008033 biological extinction Effects 0.000 abstract description 8
- 238000003384 imaging method Methods 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 229910052681 coesite Inorganic materials 0.000 description 12
- 229910052906 cristobalite Inorganic materials 0.000 description 12
- 239000000377 silicon dioxide Substances 0.000 description 12
- 229910052682 stishovite Inorganic materials 0.000 description 12
- 229910052905 tridymite Inorganic materials 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 239000000243 solution Substances 0.000 description 9
- 229910004205 SiNX Inorganic materials 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 6
- 238000009616 inductively coupled plasma Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000004043 responsiveness Effects 0.000 description 3
- 229920001486 SU-8 photoresist Polymers 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241000998584 Nuda Species 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005388 cross polarization Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/144—Devices controlled by radiation
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H01L31/02—Details
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- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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Abstract
The invention discloses a kind of InGaAs detector arrays, including silicon readout circuit chip, bottoming metal level, In posts, filling glue, InP substrate layer, InGaAs material layers, polarization metal grating, lenticule and InGaAs photosensitive element chips；Also disclose its preparation method; the thinned InP substrate layer of the present invention can shorten the distance between polarizer and detector photosensitive area; metal coating ring is added around metal grating array; integrated pixel level microlens array; improve the alignment precision of photosensitive member, polarizer and lenticule three; realized by integrated sub-wave length metal grating array and divide focal plane polarization detector; the light channel structure and energy real time imagery of simplified polarized imaging system, while by the cross-talk between the extinction ratio of pixel level microlens array raising polarization detector, the different pixels of reduction.
Description
Technical field
The present invention relates to field of photodetectors, and in particular to a kind of integrated pixel level lenticule and sub-wave length metal grating
InGaAs detector arrays, with and preparation method thereof.
Background technology
Short-wave infrared InGaAs（Indium GaAs）Detector have can working and room temperature, high mobility and good reliability etc. it is excellent
Point, it is the optimal selection of miniaturization, low cost and high reliability short-wave infrared detection system, in lll night vision, laser acquisition, boat
The fields such as its remotely sensed image have a wide range of applications demand.Traditional photo-detector can only detect the strength information of photon, and lose
The other informations such as polarization entrained by photon, phase are leaked.An important parameter of the polarization of light as light field, can be with object
Surface physicochemical property, observation angle and bulk properties and change, so Polarization Detection is further to improve target identification
A kind of effective means.
Polarization Detection imaging system includes timesharing polarization detector, divides amplitude polarization detector, point aperture polarization detector
With divide focal plane polarization detector, wherein dividing the imaging of focal plane Polarization Detection that there is light channel structure to simplify and real-time polarization imaging etc.
Advantage, it is increasingly becoming study hotspot.
So-called point of focal plane polarization detector refers to micro- polarizer on different polarization direction to be integrated on focal plane, its
In the spacing of micro- polarizer match with pixel spacing, different pixel detecting different polarization directions.Divide focal plane polarization detector
The concept of super pixel is employed, i.e., four 2x2 pixels in physical significance form a super pixel, wherein 4 in super pixel
Sub- pixel detects information on different polarization direction simultaneously, then by the way that Stokes parameters corresponding to super pixel are calculated.Divide Jiao
The image-forming principle of plane polarization detector is similar with color imaging sensor：It is directly raw for color imaging sensor, filter coating
Grow on the different pixels of focal plane；Then it is that the micro- polarizer in different polarization direction directly collects for dividing focal plane polarization detector
Into on the different pixels of focal plane.
Sub-wave length metal grating polarizer is that a kind of metal grating for being less than incident wavelength using screen periods is inclined to filter
Shake the film-type device of light, and its preparation needs to use nano level photolithography method, such as：Beamwriter lithography, holographic exposure, nanometer pressure
Print etc.；The selection of grating material also mainly has Au, Al, Cu, Ag and Mo etc..2007, Milsys Technologies companies into
Four direction wire grating polarizer is integrated on the back of the body incidence InGaAs detectors focal plane of substrate thinning by work(.In order to reduce
Cross-talk, metal grating polarizer should with detector photosensitive area close to.Wire grating be by 0 °, 45 °, 90 ° and
The super pixel unit composition of 135 ° of four polarization directions, super pixel array are 80 × 60.To the metal being integrated into before detector
Grating polarizer carries out polarization property test, and average extinction ratio reaches 125：1.
But after identical metal grating polarizer is integrated into the incident InGaAs detectors focal plane of the back of the body, extinction ratio is big
It is reduced to 6 greatly：1, the cross-talk that reason is presumably due between the photosensitive member in different polarization direction causes.
The content of the invention
The problem of existing for the back of the body incidence InGaAs detector arrays of above-mentioned single-chip integration sub-wavelength metal polarization grating,
In order to improve a polarization extinction ratio for point focal plane polarization InGaAs detectors, reduce cross-talk between different photosensitive members, the present invention
A kind of new polarization photodetector is proposed, using single chip integrated mode by pixel level lenticule and sub-wave length metal grating
Combine with InGaAs detector arrays, realize High Extinction Ratio, point focal plane polarization InGaAs detectors of low cross-talk, can answer
For infrared polarization detection system.
The technical solution adopted for the present invention to solve the technical problems is：A kind of InGaAs detector arrays, including the back of the body subtract
Thin InGaAs detector arrays and polarization metal grating array, the thinned InGaAs detectors of the described back of the body are photosensitive by InGaAs
Element chip is formed by In posts and silicon readout circuit chip upside-down mounting interconnection, and described InGaAs photosensitive element chips are by InP substrate layer
Form with the InGaAs material layers that are grown on InP substrate layer, described InGaAs material layers by arranging from bottom to up
InGaAs corrosion barrier layers, InP cushions, InGaAs absorbed layers and InP cap layers composition, described InGaAs photosensitive element chips and
It is provided between filling glue, In posts and silicon readout circuit chip and the photosensitive first cores of InGaAs and is respectively provided between silicon readout circuit chip
There is bottoming metal level, lenticule is also integrated with above described polarization metal grating.
A kind of described InGaAs detector arrays, its InGaAs photosensitive element chip is provided with and levels graphic structure pair
Accurate notched mark.
A kind of described InGaAs detector arrays, it polarizes and is provided with a circle metal coating ring around metal grating.
A kind of described InGaAs detector arrays, its lenticule and polarization metal grating vertically correspond to one by one respectively
InGaAs photosensitive element chips, lenticule, polarize center superposition of the metal grating with corresponding InGaAs photosensitive element chips.
A kind of described InGaAs detector arrays, it is Low-temperature epoxy glue that it, which fills glue,.
The second object of the present invention is to provide a kind of preparation method of InGaAs detector arrays, and step is as follows：
a）, in InP substrate layer Epitaxial growth InGaAs epitaxial wafers, the structure of InGaAs epitaxial wafers is InP respectively from bottom to up
Substrate layer, InGaAs corrosion barrier layers, InP cushions, InGaAs absorbed layers and InP cap layers；
b）, prepare the photosensitive element array of table top knot, passivation layer and contact electrode layer on InGaAs epitaxial wafers, it is photosensitive to form InGaAs
Element chip array, umbilicate type etching mark is prepared in the surrounding of InGaAs photosensitive element chip arrays, etches position, the shape of mark
It is consistent with the etching mark on silicon readout circuit chip with size；
c）, bottoming metal level and In post arrays are prepared on silicon readout circuit chip and InGaAs photosensitive element chip arrays, and lead to
Cross upside-down mounting interconnection and In post reflux techniques realize the electricity interconnection of silicon readout circuit chip and InGaAs photosensitive element chip arrays, in light
Low-temperature epoxy glue is filled between quick chip and silicon readout circuit chip and is solidified at room temperature；
d）, first remove most InP substrate layer with mechanical polishing method, it is then remaining using wet etching selective removal
InP substrate layer, next still fall InGaAs corrosion barrier layers using wet etching selective corrosion, so as to realize that InGaAs is photosensitive
The substrate thinning of element chip；
e）, complete substrate thinning the InGaAs photosensitive element chips back side cover layer of transparent deielectric-coating；
f）, on deielectric-coating spin coating positive electronic beam glue, prepare polarization metal grating array and surrounding metal etch mark；
g）, alignment metal etch mark prepare microlens array, each lenticule and metal grating array in microlens array
In each metal grating correspond, and central point coincides with the upper and lower.
Further, described step b）Umbilicate type etching mark depths on middle InGaAs photosensitive element chips array are more than
1um。
Further, described step d）It is middle corrosion InP substrate layer corrosive liquid composition be 37.5% hydrochloric acid solution and
85% phosphoric acid solution presses 3：1 mixing, corrosion temperature are 25 DEG C；The corrosive liquid composition for corroding InGaAs substrates is molten for tartaric acid
Liquid presses 5 with hydrogen peroxide：1 mixing, corrosion temperature are 35 DEG C.
The beneficial effects of the invention are as follows：
1, by combining mechanical polishing and selective chemical erosion removal the InP substrate layer at the InGaAs photosensitive element chips back side,
Further shorten the distance between polarizer and detector photosensitive area, reduce the cross-talk come due to the diffraction zone of light；
2, the sub-wavelength above photosensitive member, which polarizes, adds the different gratings of a circle metal coating ring suppression around metal grating array
Cross-talk between block；
3, by single-chip integration pixel level microlens array, acted on using convergence of the microlens array to incident photon, by incidence
Light is converged in InGaAs absorbed layers, is further improved the responsiveness of detector and is reduced the cross-talk between different photosensitive members；
4, lithography is covered by directly preparing alignment mark in the photosensitive members of InGaAs and introducing high-precision electron beam exposure,
The alignment precision of photosensitive member, polarizer and lenticule three is improved, reduces the cross-talk come due to manufacture craft error band.
In a word, the present invention will be helpful to reduce the string between point different photosensitive members of focal plane polarization InGaAs detector arrays
Sound, improve the extinction ratio for polarizing photosensitive member.
Brief description of the drawings
Fig. 1 is the section of structure of single pixel in InGaAs detector arrays of the present invention；
Fig. 2 is the preparation method flow chart of InGaAs detector arrays of the present invention；
Fig. 3 is the schematic diagram that sub-wavelength of the present invention polarizes metal grating and metal coating ring（A, B, C, D represent 4 kinds of differences respectively
Metal grating direction, the dark border around grating represents the metal coating ring for helping to reduce cross-talk, the cross of corner
Square represents etches mark for the shell of alignment）；
Fig. 4 is shown in preparation method of the present invention in InP substrate layer Epitaxial growth InGaAs epitaxial wafers；
It is to prepare the photosensitive element array of table top knot in preparation method of the present invention on InGaAs epitaxial wafers described in Fig. 5；
Fig. 6 show In post upside-down mounting interconnections and the underfill work of InGaAs photosensitive element chips of the present invention and silicon readout circuit chip
Skill；
Fig. 7 show the substrate thinning of InGaAs photosensitive element chips of the present invention；
Fig. 8 show the present invention and grows one layer of SiO at the InGaAs photosensitive element chips back side2；
Fig. 9 show the present invention in SiO2Sub-wavelength polarization metal grating array, metal coating ring and metal etch are prepared on layer
Mark；
Figure 10 show the present invention and grows certain thickness SiO on the metal layer2Layer；
Figure 11 show the present invention and prepares SiO2Microlens array.
Each reference is：1-silicon readout circuit chip, 2-bottoming metal level, 3-In posts, 4-filling glue, 5-InP
Substrate layer, 6-InGaAs material layers, 7-polarization metal grating, 8-lenticule, 9-InGaAs photosensitive element chips.
Embodiment
In order that the advantages of purpose of the present invention, technical scheme, is clearer, below in conjunction with implementation of the accompanying drawing to the present invention
It is further described.
Referring to figs. 1 to shown in Fig. 3, the invention provides a kind of compatible with conventional InGaAs detector arrays preparation technology
, the InGaAs detector arrays that pixel level lenticule and sub-wave length metal grating are integrated on the piece that can be mass, for passing
System divides the problem of focal plane polarization detector polarization extinction ratio is relatively low, cross-talk is bigger than normal, and it is photosensitive that the program can improve InGaAs
The responsiveness of element chip, and can reduce the cross-talk between adjacent picture elements, and the sectional structure chart of its single pixel is as shown in figure 1, bag
Contain with lower part：Silicon readout circuit chip 1, In posts 3 and filling glue 4, carry on the back thinned InGaAs photosensitive element chips, polarization metal
Grating 7 and lenticule 8.The thinned InGaAs detectors of the wherein described back of the body pass through In posts 3 and silicon by InGaAs photosensitive element chips 9
The upside-down mounting of readout circuit chip 1 interconnection forms, and described InGaAs photosensitive element chips 9 are by InP substrate layer 5 and are grown in InP substrate
Layer 5 on InGaAs material layers 6 form, described InGaAs material layers 6 by arrange from bottom to up InGaAs corrosion barrier layers,
InP cushions, InGaAs absorbed layers and InP cap layers composition, described InGaAs photosensitive element chips 9 and silicon readout circuit chip 1
Between be provided with filling glue 4, be provided between In posts 3 and silicon readout circuit chip 1 and InGaAs photosensitive element chips 9 bottoming gold
Belong to layer 2, the described top of polarization metal grating 7 is also integrated with lenticule 8, and incident infrared photon after lenticule 8 by wearing
Cross polarization metal grating 7, the InGaAs Intrinsic Gettering layers of InGaAs photosensitive element chips 9 can be focused on.
In order to further shorten polarization the distance between metal grating 7 and detector photosensitive area, made in polarization metal grating 7
Also needed to before standby by chemically-mechanicapolish polishing the InP removed with the method for chemical attack on the array of InGaAs photosensitive element chips 9
Substrate layer 5；On InGaAs photosensitive element chips 9, also it is used for the notched mark with the alignment of levels graphic structure.
A circle metal coating ring is provided with around described polarization metal grating 7, for suppressing adjacent sub-wavelength metal light
Cross-talk between grid block；Metal membrane material can be Au, Al, Cu, Ag and Mo etc., preferably Al.
Described polarization metal grating 7 array is to be prepared by micro-nano technology on the array of InGaAs photosensitive element chips 9
Sub-wavelength polarizes metal grating, and the described array of lenticule 8 is to be prepared by micro-nano technology on the polarization array of metal grating 7
Transparent dielectric film, transparent dielectric film can be SiO2, the material such as SiNx and Su-8 photoresists.
Each polarization metal light in each lenticule 8 and the polarization array of metal grating 7 in the described array of lenticule 8
Each InGaAs photosensitive element chips that grid 7 vertically correspond in the array of InGaAs photosensitive element chips 9 one by one respectively；And lenticule 8
Center, the center and the center of corresponding InGaAs photosensitive element chips 9 that polarize metal grating 7 be coincidence.
Described filling glue 4 is Low-temperature epoxy glue, is filled between InGaAs photosensitive element chips 9 and silicon readout circuit chip 1
Enter Low-temperature epoxy glue and solidified at room temperature.
The novelty of the present invention is that synthesis takes following four measure to improve a point focal plane polarization InGaAs detectors
Polarization extinction ratio, reduce cross-talk between different photosensitive members：
1, polarizer and detector light are further shortened by the InP substrate layer reduction process for combining mechanical polishing and chemical attack
The distance between quick area, reduce the cross-talk come due to the diffraction zone of light；By removing the InGaAs photosensitive element chips back side completely
InP substrate layer, further shorten sub-wavelength polarization the distance between metal grating and detector photosensitive area；
2, the cross-talk added around sub-wavelength polarization metal grating array between the different grating blocks of a circle metal coating ring suppression；
The circle metal coating ring of design one suppresses cross-talk around the metal grating block above photosensitive member；
3, by single-chip integration pixel level microlens array, by incident light rays into InGaAs absorbed layers, further improve and visit
Survey the responsiveness of device and reduce the cross-talk between different photosensitive members；
4, photosensitive member, polarizer and the alignment precision of lenticule three are improved by the innovation of preparation technology scheme, reduce due to
The cross-talk that manufacture craft error band comes.
Reference picture 4 to shown in Figure 11, introduced below in a manner of specific embodiment the present invention specific preparation flow：
1, in InP substrate layer Epitaxial growth InGaAs epitaxial wafers, the structure of epitaxial wafer be respectively from bottom to up InP substrate layer,
InGaAs corrosion barrier layers, InP cushions, InGaAs absorbed layers and InP cap layers.InP substrate layer is exhausted for the N-type half of 350 μ m-thicks
Edge substrate；InGaAs corrosion barrier layers are the thick n-type doping In of 500nm0.53Ga0.47As materials, doping concentration>1*1018cm-3；
InP cushions are the thick n-type doping InP materials of 1000 nm, doping concentration>1*1018cm-3；InGaAs absorbed layers are 2000 nm
Thick unintentional doping In0.53Ga0.47As materials, doping concentration<1*1016cm-3；InP cap layers are the thick p-type doping of 500 nm
InP materials, doping concentration>1*1018cm-3.Material growing device is chosen as metal-organic chemical vapor deposition equipment
（MOCVD）Or molecular beam epitaxy growth apparatus（MBE）.
2, the photosensitive element array of table top knot, passivation layer and contact electrode layer are prepared on InGaAs epitaxial wafers, forms InGaAs
Photosensitive element chip array；The photosensitive first size of table top knot is 23 μm * 23 μm, and the cycle is 30 μm, in InGaAs photosensitive element chip arrays
Surrounding prepare umbilicate type alignment（Etching）Mark, etch the position of mark, shape and size must be with silicon readout circuit chip
On etching mark it is consistent, here from the square hole for 20 μm * 20 μm.400 nm thickness is grown on InGaAs epitaxial wafers first
SiNx is carved the figure of photosensitive element array and depression by the method for ultraviolet photolithographic plus dry etching as table top knot etch mask
The pattern transfer of mark is lost on SiNx films, after resist removal again by the method for dry etching by SiNx masks
Pattern transfer come on InP/InGaAs epitaxial layers, total etching depth of InP/InGaAs epitaxial layers is 2600nm.Ultraviolet light
Photoresist is chosen as positive photoresist such as AZ4620, AZ9260 etc., and negative photoresist such as AZ5214 also can be selected.Dry etching is optional
With inductively coupled plasma etching machine（ICP）, reactive ion etching machine（RIE）Etc. equipment.The passivation of the photosensitive members of InGaAs can
The chemical vapor depsotition equipment of using plasma enhancing（PECVD）Grow SiNx or SiO2Film realization, the electrode of photosensitive member
Contact layer by electron beam evaporation Ti/Pt/Au and can carry out rapid thermal annealing to realize Ohmic contact.
3, the method by ultraviolet photolithographic, electron beam evaporation, stripping is photosensitive in silicon readout circuit chip and InGaAs respectively
Element chip evaporation prepares bottoming metal level（UBM）, the composition of bottoming metal level from bottom to up is Ti/Pt/Au=50nm/40nm/
110nm.Then In balls are prepared by steps such as ultraviolet photolithographic, thermal evaporation, stripping, backflow contracting balls on bottoming metal level（In posts）
Array, the average height of In balls is 8-10 μm.Silicon readout circuit chip and light are realized by upside-down mounting interconnection and In ball reflux techniques
The electricity interconnection of quick element chip, upside-down mounting interconnection technology can be completed using the high-precision upside-down mounting soldering equipment FC150 that SET companies produce.
Low-temperature epoxy glue is filled between photosensor chip and silicon readout circuit chip and is solidified at room temperature.
4, remove major part first with mechanical polishing method（About 250 μ m-thicks）InP substrate layer, cleaning sample simultaneously removes
The polishing product of sample surfaces；Then the remaining InP substrate layer of wet etching selective removal is utilized, next still uses wet method
Etch selectivities erode InGaAs corrosion barrier layers（InGaAs substrates）, so as to realize the substrate thinning of photosensitive element chip.This
In be used for mechanically polish remove InP substrate layer equipment be Logitech companies PM6 precise finiss polishing systems；For selecting
Property corrosion InP substrate layer corrosive liquid composition be the hydrochloric acid solution that percent by volume is 37.5% and the phosphorus that percent by volume is 85%
The volume ratio of the mixed solution of acid solution, hydrochloric acid solution and phosphoric acid solution is preferably 3：1, corrosion temperature is 25 DEG C；For selecting
Property corrosion InGaAs substrates corrosive liquid composition be the mixed solution of tartaric acid solution and hydrogen peroxide, tartaric acid solution（Weight ratio
Tartaric acid：H2O=1：1）：H2O2Volume ratio is 5：1, corrosion temperature is 35 DEG C.
5, photosensitive first back side covering layer of transparent deielectric-coating of substrate thinning is completed, transparent dielectric film growth temperature is not high
In 150 DEG C.The chemical vapor depsotition equipment strengthened by inductively coupled plasma（ICPCVD）It is photosensitive after substrate thinning
First back side growth 100nm thickness SiO2As transparent dielectric film, SiO2Growth temperature is chosen as between 80-130 DEG C.
6, in SiO2Spin coating positive electronic beam glue on layer, with the depression etching on photosensitive element chip labeled as positioning, pass through
Alignment process, the metal coating/stripping technology of electron beam exposure, prepare sub-wave length metal grating array, metal coating ring and four
The metal etch mark in week.Positive electronic beam glue can be ZEP520A, PMMA etc., and electron-beam exposure system used is
The EBPG 5000+ electron-beam exposure systems of Vistech companies.The metal film being deposited is Al films, and thickness is 100 nm；Wherein
Screen periods are 400 nm, and dutycycle 0.5, grating block size is 28 μm * 28 μm；The line thickness of metal coating ring is 4 μm.
Fig. 2 gives the structural representation of the metal etch mark of sub-wave length metal grating array, metal coating ring and surrounding.Due to this
Depression etching mark in step using electron-beam lithography system Direct Recognition etching on InGaAs photosensitive element chips so that sub-
Wave length metal grating array and the alignment error at photosensitive first pixel center greatly reduce（<50 nm）, reduce due to manufacture craft
The cross-talk that error band comes.
7, alignment metal etch mark prepares microlens array, each lenticule and metal grating battle array in microlens array
Each metal grating in row corresponds, and central point coincides with the upper and lower.Microlens array material can be SiO2、SiNxAnd
The materials such as Su-8 photoresists, the preparation method of lenticule can use nuda rice or melting photoresist to add dry etching to turn
The method of shifting, dry etching can use reactive ion etching, inductively coupled plasma etching, ion beam etching etc. respectively to different
The etch tool of property.The chemical vapor depsotition equipment strengthened by inductively coupled plasma（ICPCVD）It is raw on Al metal levels
Long 5000nm thickness SiO2, SiO2Growth temperature is chosen as between 80-130 DEG C.
8, in SiO2Spin coating ultraviolet photoresist AZ4620 on layer, glue thickness are 1.1 μm, are obtained by the alignment process of ultraviolet photolithographic
To square（The length of side=26 μm）Periodicity photoresist rod structure, photoresist is heated to 140 DEG C of molten condition, photoetching
Glue just forms spherical cap structure in the presence of its surface tension.Photoresist after hot melt is highly about 4um, and base size is still
For 26 μm.
9, by dry etching by the SiO of the lenticule pattern transfer of AZ4620 photoresists to lower floor2Up, etching depth
For 4.1 μm, dry etch process need to be to photoresist and SiO2With similar etch rate, that is, ratio is selected close to 1:1.Dry method is carved
Erosion can select the anisotropic etch tool such as reactive ion etching, inductively coupled plasma etching, ion beam etching.
Integrated on the detector chip for completing photosensitive element chip and silicon readout circuit chip upside-down mounting interconnection and possess analyzing
The sub-wave length metal grating array of function and the pixel level microlens array with light gathering.
The above-described embodiments merely illustrate the principles and effects of the present invention, and the embodiment that part uses, for
For one of ordinary skill in the art, without departing from the concept of the premise of the invention, can also make it is some deformation and
Improve, these belong to protection scope of the present invention.
Claims (9)
- A kind of 1. InGaAs detector arrays, it is characterised in that：Including carrying on the back thinned InGaAs detector arrays and polarization metal Grating（7）Array, the thinned InGaAs detectors of the described back of the body are by InGaAs photosensitive element chips（9）Pass through In posts（3）Read with silicon Go out circuit chip（1）Upside-down mounting interconnection forms, described InGaAs photosensitive element chips（9）By InP substrate layer（5）Be grown in InP Substrate layer（5）On InGaAs material layers（6）Form, described InGaAs material layers（6）By the InGaAs arranged from bottom to up Corrosion barrier layer, InP cushions, InGaAs absorbed layers and InP cap layers composition, described InGaAs photosensitive element chips（9）And silicon Readout circuit chip（1）Between be provided with filling glue（4）, In posts（3）With silicon readout circuit chip（1）With the photosensitive first cores of InGaAs Piece（9）Between be provided with bottoming metal level（2）, described polarization metal grating（7）Top is also integrated with lenticule（8）.
- A kind of 2. InGaAs detector arrays according to claim 1, it is characterised in that the photosensitive first cores of described InGaAs Piece（9）It is provided with the notched mark with the alignment of levels graphic structure.
- A kind of 3. InGaAs detector arrays according to claim 1, it is characterised in that described polarization metal grating （7）Surrounding is provided with a circle metal coating ring.
- A kind of 4. InGaAs detector arrays according to claim 1, it is characterised in that described polarization metal grating （7）Prepared by micro-nano technology in InGaAs photosensitive element chips（9）On；Described lenticule（8）To be prepared by micro-nano technology In polarization metal grating（7）On transparent dielectric film.
- A kind of 5. InGaAs detector arrays according to claim 4, it is characterised in that described lenticule（8）With it is inclined Shake metal grating（7）Difference vertically corresponds to InGaAs photosensitive element chips one by one（9）, lenticule（8）, polarization metal grating（7） With corresponding InGaAs photosensitive element chips（9）Center superposition.
- A kind of 6. InGaAs detector arrays according to claim 1, it is characterised in that described filling glue（4）To be low Temperature epoxy glue.
- 7. a kind of preparation method of InGaAs detector arrays as claimed in claim 1, it is characterised in that step is as follows：a）, in InP substrate layer Epitaxial growth InGaAs epitaxial wafers, the structure of InGaAs epitaxial wafers is InP respectively from bottom to up Substrate layer, InGaAs corrosion barrier layers, InP cushions, InGaAs absorbed layers and InP cap layers；b）, prepare the photosensitive element array of table top knot, passivation layer and contact electrode layer on InGaAs epitaxial wafers, it is photosensitive to form InGaAs Element chip array, umbilicate type etching mark is prepared in the surrounding of InGaAs photosensitive element chip arrays, etches position, the shape of mark It is consistent with the etching mark on silicon readout circuit chip with size；c）, bottoming metal level and In post arrays are prepared on silicon readout circuit chip and InGaAs photosensitive element chip arrays, and lead to Cross upside-down mounting interconnection and In post reflux techniques realize the electricity interconnection of silicon readout circuit chip and InGaAs photosensitive element chip arrays, in light Low-temperature epoxy glue is filled between quick chip and silicon readout circuit chip and is solidified at room temperature；d）, first remove most InP substrate layer with mechanical polishing method, it is then remaining using wet etching selective removal InP substrate layer, next still fall InGaAs corrosion barrier layers using wet etching selective corrosion, so as to realize that InGaAs is photosensitive The substrate thinning of element chip；e）, complete substrate thinning the InGaAs photosensitive element chips back side cover layer of transparent deielectric-coating；f）, on deielectric-coating spin coating positive electronic beam glue, prepare polarization metal grating array and surrounding metal etch mark；g）, alignment metal etch mark prepare microlens array, each lenticule and metal grating array in microlens array In each metal grating correspond, and central point coincides with the upper and lower.
- A kind of 8. preparation method of InGaAs detector arrays according to claim 7, it is characterised in that described step b）Umbilicate type alignment etching mark depths on middle InGaAs photosensitive element chips array are more than 1 μm.
- A kind of 9. preparation method of InGaAs detector arrays according to claim 7, it is characterised in that described step d）The hydrochloric acid solution and 85% phosphoric acid solution that the corrosive liquid composition of middle corrosion InP substrate layer is 37.5% press 3：1 mixing, corrosion Temperature is 25 DEG C；The corrosive liquid composition for corroding InGaAs substrates presses 5 for tartaric acid solution and hydrogen peroxide：1 mixing, corrosion temperature are 35℃。
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| CN114068762B (en) * | 2021-11-18 | 2024-01-12 | 中国科学院长春光学精密机械与物理研究所 | Preparation method of photoelectric detector with light splitting structure |
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