CN110391307A - A kind of preparation method of the up-conversion device of InGaAs detector in conjunction with OLED - Google Patents
A kind of preparation method of the up-conversion device of InGaAs detector in conjunction with OLED Download PDFInfo
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- CN110391307A CN110391307A CN201810350162.6A CN201810350162A CN110391307A CN 110391307 A CN110391307 A CN 110391307A CN 201810350162 A CN201810350162 A CN 201810350162A CN 110391307 A CN110391307 A CN 110391307A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
The present invention provides a kind of preparation methods of up-conversion device of InGaAs detector in conjunction with OLED, comprising: provides an InGaAs/InP epitaxial wafer；At least one microlens array unit is formed on the first surface of the InGaAs/InP epitaxial wafer, each microlens array unit includes multiple lenticules arranged with array manner, to focus on infrared light on the InGaAs/InP epitaxial wafer；At least one OLED is formed on the second surface of the InGaAs/InP epitaxial wafer, the first surface is opposite with the second surface, and at least one described OLED is arranged with being aligned at least one described microlens array unit, to obtain the up-conversion device.The present invention so as to focus infrared light, and then improves the absorption of infrared light by preparing at least one microlens array unit on the surface of InGaAs/InP epitaxial wafer.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of upper conversion of InGaAs detector in conjunction with OLED
The preparation method of device.
Background technique
Currently, infrared imagery technique is using indium bump joining technology, it is by an infrared photoelectric detector array and one
A to be connected based on the reading of silicon-output integrated circuit pixel to carry out the detection of IR Scene, the signal of detection passes through liquid again
Crystal display or the output of other imaging devices.It is a kind of good technology in indium bump joining technical know-how, but it is real in technique
It is existing difficult.Crucial one of reason is, to divide on infrared detector array chip and silicon signal processing circuit chip
Other growing high density, thin diameter, the indium column array that height is enough and consistency is good, to be interconnected.However, to grow full
The indium column array of sufficient above-mentioned requirements needs the processing step of very accurate electronic equipment and complexity, and yield rate is not high,
Thus cause production cost very high indirectly.Furthermore infrared imaging is carried out using indium bump joining technology, resolution ratio is lower, exists
Integrity problem.
The up-conversion device that InGaAs infrared detector is combined with Organic Light Emitting Diode (OLED) can solve well
It has determined the above problem.However the transfer efficiency and detectivity of current up-conversion device of the InGaAs detector in conjunction with OLED are not
Height is difficult to realize practical application.One of principal element be infrared light only some can be absorbed by InGaAs detector,
Rest part can all be wasted, this has seriously affected the performance of device.
Summary of the invention
It is an object of the present invention to solve upconverter of the InGaAs detector in the prior art in conjunction with OLED
The low technical problem of transfer efficiency caused by weak to infrared Absorption ability.
The present invention provides a kind of preparation methods of up-conversion device of InGaAs detector in conjunction with OLED, comprising:
One InGaAs/InP epitaxial wafer is provided；
At least one microlens array unit is formed on the first surface of the InGaAs/InP epitaxial wafer, it is each micro-
Lens array unit includes multiple lenticules arranged with array manner, infrared light is focused on the InGaAs/InP extension
On piece；
Form at least one OLED on the second surface of the InGaAs/InP epitaxial wafer, the first surface with it is described
Second surface is opposite, and at least one described OLED is arranged with being aligned at least one described microlens array unit, to obtain
Obtain the up-conversion device.
Optionally, at least one microlens array unit is formed on the first surface of the InGaAs/InP epitaxial wafer,
Include the following steps:
Apply the first photoresist on the first surface of the InGaAs/InP epitaxial wafer；
Lenticule template is placed on the first surface for being applied with the photoresist；
Apply an active force to the lenticule template, and withdraws from the active force after preset time；
The lenticule template is removed from the InGaAs/InP epitaxial wafer, it is described to be formed on the first surface
Microlens array unit.
Optionally, first photoresist is negative photoresist.
Optionally, after applying the first photoresist on the first surface of the InGaAs/InP epitaxial wafer, by lenticule
Before template is placed on the first surface for be applied with the photoresist, further includes: to the InGaAs/InP epitaxial wafer
1-60min is heated at 100-150 DEG C.
Optionally, after removing the lenticule template from the InGaAs/InP epitaxial wafer, further includes: to described
InGaAs/InP epitaxial wafer is exposed, dries afterwards and development treatment.
Optionally, the preparation method of the lenticule template includes the following steps:
One substrate is provided；
Apply the second photoresist on the surface of the substrate, and carries out front baking, exposure, development and rear baking processing, with
The model with the lenticule curve form is formed on the substrate；
The material solution for being used to make the lenticule template is applied to the substrate for being formed with the model；
Curing process is carried out to the substrate, and by the material for being used to make the lenticule template after solidification from described
It is removed on substrate, to obtain the lenticule template.
Optionally, the material solution for making the lenticule template be dimethyl silicone polymer and curing agent by
It is the mixed liquor of 5-20:1 configuration according to volume ratio.
Optionally, second photoresist is positive photoresist.
Optionally, at least one OLED is formed on the second surface of the InGaAs/InP epitaxial wafer, including walked as follows
It is rapid:
Photoetching is carried out to the InGaAs/InP epitaxial wafer, and the InGaAs/InP epitaxial wafer after photoetching is immersed into acid carve
It is performed etching in erosion liquid；
Insulating layer is grown on InGaAs/InP epitaxial wafer after etching；
Secondary photoetching carried out to the lnGaAs/InP epitaxial wafer, and to the InGaAs/InP epitaxial wafer after secondary photoetching into
Row etching；
Mask plate is set on the second surface of the InGaAs/InP epitaxial wafer；
Organic light-emitting units layer, intermediate connecting layer and electrode layer is deposited, to be formed on the InGaAs/InP epitaxial wafer
At least one OLED.
Optionally, the insulating layer is silicon nitride or silica.
According to the solution of the present invention, by preparing at least one microlens array on the surface of InGaAs/InP epitaxial wafer
Unit so as to focus infrared light, and then improves the absorption of infrared light, improves the transfer efficiency of up-conversion device.
According to the following detailed description of specific embodiments of the present invention in conjunction with the accompanying drawings, those skilled in the art will be brighter
The above and other objects, advantages and features of the present invention.
Detailed description of the invention
Some specific embodiments of the present invention is described in detail by way of example and not limitation with reference to the accompanying drawings hereinafter.
Identical appended drawing reference denotes same or similar part or part in attached drawing.It should be appreciated by those skilled in the art that these
What attached drawing was not necessarily drawn to scale.In attached drawing:
Fig. 1 is the preparation side of up-conversion device of the InGaAs detector according to an embodiment of the invention in conjunction with OLED
The schematic flow chart of method；
Fig. 2 is the schematic flow chart of step S200 shown in Fig. 1；
Fig. 3 is the schematic structure flow chart of step S200 shown in Fig. 1；
Fig. 4 is the schematic flow chart of the preparation method of lenticule template according to an embodiment of the invention；
Fig. 5 is the schematic structure flow chart of the preparation method of lenticule template according to an embodiment of the invention；
Fig. 6 is the relational graph between different whirl coating speed and thickness；
Fig. 7 is the schematic flow chart of step S300 shown in Fig. 1.
Specific embodiment
Fig. 1 shows the system of up-conversion device of the InGaAs detector according to an embodiment of the invention in conjunction with OLED
The schematic flow chart of Preparation Method.As shown in Figure 1, the preparation method includes:
Step S100 provides an InGaAs/InP epitaxial wafer；
Step S200 forms at least one microlens array unit, often on the first surface of InGaAs/InP epitaxial wafer
A microlens array unit includes multiple lenticules arranged with array manner, to focus on infrared light outside InGaAs/InP
Prolong on piece；
Step S300 forms at least one OLED, first surface and on the second surface of InGaAs/InP epitaxial wafer
Two surfaces are opposite, and at least one OLED is arranged with being aligned at least one microlens array unit, to obtain upconverter
Part.
According to the solutions of the embodiments of the present invention, micro- by preparing at least one on the surface of InGaAs/InP epitaxial wafer
Lens array unit so as to focus infrared light, and then improves the absorption of infrared light, improves the transfer efficiency of up-conversion device.
Fig. 2 shows the schematic flow charts of step S200 shown in Fig. 1.As shown in Fig. 2, step S200 includes following step
It is rapid:
Step S201 applies the first photoresist on the first surface of InGaAs/InP epitaxial wafer；
Lenticule template is placed on the first surface for being applied with photoresist by step S202；
Step S203 applies an active force to lenticule template, and withdraws from active force after preset time；
Step S204 removes lenticule template, from InGaAs/InP epitaxial wafer to form lenticule on the first surface
Array element.
Fig. 3 shows the schematic structure flow chart of step S200 shown in Fig. 1, describes below in conjunction with Fig. 2 and Fig. 3.One
In a embodiment, in step s 201, using negative photoresist such as SU-8 to the first surface of InGaAs/InP epitaxial wafer into
Row spin coating.The reason of spin coating negative photoresist is that the corruption of multi-solvents and acid solution can be born after negative photoresist crosslinking
Candle, thus it can be prevented that subsequent InGaAs/InP epitaxial wafer is corroded in wet etching, meanwhile, negative photoresist has good
Good heat resistance, it is insensitive to the temperature change of environment.When spin coating negative photoresist, by InGaAs/InP epitaxial wafer face down
Spin coater middle is placed, carries out spin coating with two-step method.It is arranged to the spin coating 8s in the case where revolving speed is 800rpm/min in the first step, the
It is arranged to the spin coating 40s in the case where revolving speed is 2000rpm/min in two steps, finally obtained negative photoresist is with a thickness of 10 μm.
It further include front baking processing between step S201 and S202.Specifically, the InGaAs/InP that photoresist will be applied with
Epitaxial wafer is face-up, dips a small amount of developer for negative photoresist and negative photoresist remained on surface is wiped clean, then by InGaAs/InP
Epitaxial wafer face down is placed on warm table, and the first preset time is heated under the first preset temperature.Wherein, the first default temperature
Degree for example can be 100 DEG C, 110 DEG C, 120 DEG C, 130 DEG C, 140 DEG C or 150 DEG C, be also possible to 100-150 DEG C any other
Temperature value.First preset time for example can be 1min, 10min, 30min, 40min or 60min, be also possible to 1-60min's
Any other time.
In step S202, lenticule template is placed on again after needing for InGaAs/InP epitaxial wafer to be cooled to room temperature and is applied
On first surface added with photoresist.
In step S204, from InGaAs/InP epitaxial wafer after removing lenticule template, further includes: exposure, rear baking
And development treatment.Wherein, in one embodiment, exposure-processed is that InGaAs/InP epitaxial wafer face down is placed on light
On quarter machine, it is exposed with MJB4 type litho machine, using the xenon lamp of 500W as exposure light source, and exposes 30s.Herein, it exposes
Light source and time are not limited to this.
Baking processing is after exposure-processed after in step S204, and concrete operations are, will be outside the InGaAs/InP after exposure
Prolong piece face down to be placed on warm table, the second preset time is heated under the second preset temperature.Wherein, the second preset temperature
Such as can be 100 DEG C, 110 DEG C, 120 DEG C, 130 DEG C, 140 DEG C or 150 DEG C, it is also possible to 100-150 DEG C of any other temperature
Angle value.Second preset time for example can be 1min, 10min, 30min, 40min or 60min, be also possible to appointing for 1-60min
One other time.
Development treatment is after rear baking in step S204, and concrete operations are, by the InGaAs/InP epitaxial wafer after heating
It is cooled to room temperature, is then immersed in developer solution, constantly shake, develop after 20s, dried up with nitrogen gun.
In one embodiment, the material of lenticule template can be dimethyl silicone polymer in step S202 and S203.
Fig. 4 shows the schematic flow chart of the preparation method of lenticule template according to an embodiment of the invention.As shown in figure 4,
The lenticule template is to be prepared from the following steps:
Step S1 provides a substrate；
Step S2 applies the second photoresist on the surface of the substrate, and carries out front baking, exposure, development and rear baking processing,
To form the model with lenticule curve form on substrate；
The material solution for being used to make lenticule template is applied to the substrate for being formed with model by step S3；
Step S4 carries out curing process to substrate, and by the material for being used to make lenticule template after solidification from substrate
Upper removing, to obtain lenticule template.
Fig. 5 shows the schematic flow chart of the preparation method of lenticule template according to an embodiment of the invention.With
Under as shown in connection with fig. 5, in step sl, which for example can be silicon wafer.Successively use acetone, isopropanol and deionized water pair
Silicon wafer carries out ultrasound.Then it is dried, such as can be and toast 20- in the thermal station for be placed on silicon wafer 180 DEG C
30min.The purpose of cleaning silicon chip is the greasy dirt and impurity in order to remove silicon chip surface, and the purpose of baking is to sufficiently remove silicon
The solvent on piece surface, to improve the adhesion strength between photoresist and silicon wafer.
In step s 2, the second photoresist is positive photoresist such as AZ9260 photoresist.When it is implemented, silicon wafer is placed
In spin coater center, full photoresist is covered in silicon chip surface, spin coating is carried out with two-step method.Being arranged to revolving speed in the first step is
Spin coating 8s under 800rpm/min is arranged to the spin coating 40s in the case where revolving speed is 20000-6000rpm/min in second step.Fig. 6 is shown
Relational graph between different whirl coating speed and thickness.In order to obtain ideal microlens array unit, the rate of selection is
4000rpm/min, the thickness of the positive photoresist of acquisition are about 5 μm.
In front baking processing in step S2, if temperature is excessively high, skin effect can occur, be unfavorable for the solvent of internal glue-line
Volatilization, the adhesive force that will lead to photoresist and substrate in this way reduce, and rate when development slows down.It, can if pre-bake temperature is too low
Cause solvent volatilization to be not thorough, the pollution of photo mask board is be easy to cause in subsequent photoetching process, while can also make to develop
Speed accelerate.Inventor has found that 30min is heated at 100 DEG C can achieve best effect by lot of experiment validation.
Exposure-processed in step S2 is to be exposed using MJB4 type litho machine, uses 500W after front baking processing
Xenon lamp as exposure light source, and expose 1min.Herein, exposure light source and time are not limited to this.
Development treatment in step S2 is after exposure-processed, and concrete operations are to use immediately after end exposure
AZ300MIF type developer solution develops, developing time 50s.
Rear baking processing in step S2 is after development treatment, and concrete operations are completely to be placed on silicon wafer development and add
It is toasted in thermal station, process is similar to front baking, but purpose is different, and there are two the purposes dried afterwards, first is that in order to remove remaining
Solvent, second is that in order to make the AZ9260 type photoresist of unexposed area be heated to thermosol state under glass transition temperature,
Make it in surface tension and forms lenticule curved surface under the action of with the adhesive force of side wall.The temperature and time dried afterwards will select to fit
When, it is rear to dry deficiency to will lead to film layer consistency inadequate, be easily damaged in the subsequent process, but it is rear dry excessive, photoresist carbon can be made
Change and black, the film layer brittleness of photoresist is caused to increase, phenomena such as warpage, peel off occurs in subsequent technique process is easy.Invention
People dries 20min after the condition that lot of experiment validation discovery is dried by after is selected as at 110 DEG C, can achieve best effect
Fruit.
In one embodiment, the material solution of the lenticule template in step S3 for example can be dimethyl silicone polymer
With the mixed liquor of curing agent.Wherein the volume ratio of dimethyl silicone polymer and curing agent such as can be 5:1,10:1,15:1 or
20:1 is also possible to any other volume ratios of 5-20:1.When configuring the mixed liquor of dimethyl silicone polymer and curing agent, need
It slowly stirs and enters wherein to avoid air, the silicon after then being dried suitable after the mixed liquor being sufficiently stirred is poured over
On piece.
In step s 4, curing process is that silicon wafer is put into vacuum drying oven, 50 DEG C at a temperature of be allowed to for roasting 24 hours
Solidification.After cooling to room temperature, due to its material property, it can easily be stripped down from silicon wafer.
Fig. 7 shows the schematic flow chart of step S300 shown in Fig. 1.As shown in figure 3, step S300 includes:
Step S301 carries out photoetching to InGaAs/InP epitaxial wafer, and the InGaAs/InP epitaxial wafer after photoetching is immersed
It is performed etching in acid etching liquid；
Step S302 grows insulating layer on InGaAs/InP epitaxial wafer after etching；
Step S303 carries out secondary photoetching to lnGaAs/InP epitaxial wafer, and to the InGaAs/InP after secondary photoetching outside
Prolong piece to perform etching；
Mask plate is arranged on the second surface of InGaAs/InP epitaxial wafer in step S304；
Step S305, vapor deposition organic light-emitting units layer, intermediate connecting layer and electrode layer, on InGaAs/InP epitaxial wafer
Form at least one OLED.
Before step S301 can also include the InGaAs/InP epitaxial wafer that step S200 is obtained is carried out it is pretreated
Step.Concrete operations are that the InGaAs/InP epitaxial wafer that step S200 is obtained successively is used acetone, isopropanol and deionization moisture
Jin Hang not be ultrasonic, dry InGaAs/InP epitaxial wafer is transferred to UV ozone cleaning machine after ultrasound, face-up, clearly
Wash certain time, such as 10min, 20min or 30min.UV ozone cleaning machine not only can effectively clean the surface ITO, and
And the work function of InGaAs can be improved, reduce the hole injection barrier from InGaAs to oled layer.
It further include to InGaAs/InP after being pre-processed to InGaAs/InP epitaxial wafer, and before step S301
Epitaxial wafer applies the step of photoresist, and concrete operations are that InGaAs/InP epitaxial wafer is face-up placed spin coater middle,
With two-step method spin coating, the first step is arranged to spin coating 8s under 800rpm/min, is arranged in second step in revolving speed be 3500rpm/min
Lower spin coating 40s.Epitaxial wafer is put on warm table after spin coating, toasts 3min at 100 DEG C.
After to be baked, the lithography step in step S301 is carried out, is carried out specifically, epitaxial wafer is placed on litho machine
Photoetching, time for exposure 1.6s, then develops.
In step S301, the InGaAs/InP epitaxial wafer after photoetching is performed etching by the way of wet etching.Firstly,
Two kinds of etching liquids are needed to configure, one kind being used to etching of InP layer, by H3PO4: HCl is mixed according to the volume ratio of 3:1.Other one
Kind etching liquid is used to etch InGaAs layers, by H2SO4: H2O2:H2O is mixed according to the volume ratio of 1:1:60.Wherein, sulphur used
Acid is 98% concentrated sulfuric acid, and hydrochloric acid used is 36.5% concentrated hydrochloric acid, and hydrogen peroxide used is 30% aqueous hydrogen peroxide solution, water used
For deionized water.Then, the InGaAs/InP epitaxial wafer after development is immersed in H3PO4: it is carved in the acid etching liquid of HCl=3:1
30s is lost, then it is H that epitaxial wafer, which is immersed in volume ratio,2SO4: H2O2:H220min is etched in the acid etching liquid of O=1:1:60, then
It is rinsed with deionized water, is finally dried up with nitrogen gun.After etching, InGaAs/InP epitaxial wafer is immersed in acetone soln
In, to remove photoresist.
In step S302, be the InGaAs/InP epitaxial wafer that will be obtained after step S301 be transferred to inductively it is equal from
In daughter machine, insulating layer is grown.Wherein, insulating layer can be silicon nitride or silica, thickness can for 100nm, 150nm,
200nm or 250nm.
It is by treated InGaAs/InP epitaxial wafer face-up the places spin coater center step S302 in step S303
Between, with two-step method spin coating, it is arranged to the spin coating 8s in the case where revolving speed is 800rpm/min in the first step, is arranged in second step in revolving speed
For spin coating 40s under 3500rpm/min.Epitaxial wafer is put on warm table after spin coating, toasts 3min at 100 DEG C.Wait dry
After roasting, epitaxial wafer is put on litho machine, will carry out photoetching after the pattern alignment on epitaxial wafer, time for exposure 1.6s,
Then develop.InGaAs/LnP epitaxial wafer is transferred in reactive ion etching machine again, utilizes SF6、CHF3、O2With He tetra-
Kind gas performs etching, etch period 90s.
In one embodiment, step S305 is specifically, step S304 treated InGaAs/InP epitaxial wafer is shifted
It is vacuumized into thermal evaporation plated film instrument, is down to 4 × 10 to vacuum degree in cabin-4Just vacuum thermal evaporation is carried out when Pa or less.It presses
According to InGaAs/InP epitaxial wafer/NPB (40nm)/TCTA (20nm)/CBP:Ir (ppy)3(30nm, 8wt%)/TPBi (40nm)/
Each layer is successively deposited in Ca (10nm)/Ag (10nm) structure.Wherein, the hot evaporation rate control that organic material is deposited existsThe hot evaporation rate control of evaporation metal material exists
So far, although those skilled in the art will appreciate that present invention has been shown and described in detail herein multiple shows
Example property embodiment still without departing from the spirit and scope of the present invention, still can according to the present disclosure directly
Determine or deduce out many other variations or modifications consistent with the principles of the invention.Therefore, the scope of the present invention is understood that and recognizes
It is set to and covers all such other variations or modifications.
Claims (10)
1. a kind of preparation method of up-conversion device of InGaAs detector in conjunction with OLED characterized by comprising
One InGaAs/InP epitaxial wafer is provided；
At least one microlens array unit, each lenticule battle array are formed on the first surface of the InGaAs/InP epitaxial wafer
Column unit includes multiple lenticules arranged with array manner, infrared light is focused on the InGaAs/InP epitaxial wafer
On；
At least one OLED, the first surface and described second are formed on the second surface of the InGaAs/InP epitaxial wafer
Surface is opposite, and at least one described OLED is arranged with being aligned at least one described microlens array unit, to obtain
State up-conversion device.
2. the preparation method of up-conversion device according to claim 1, which is characterized in that in the InGaAs/InP extension
At least one microlens array unit is formed on the first surface of piece, is included the following steps:
Apply the first photoresist on the first surface of the InGaAs/InP epitaxial wafer；
Lenticule template is placed on the first surface for being applied with the photoresist；
Apply an active force to the lenticule template, and withdraws from the active force after preset time；
The lenticule template is removed from the InGaAs/InP epitaxial wafer, it is described micro- to be formed on the first surface
Lens array unit.
3. the preparation method of up-conversion device according to claim 2, which is characterized in that first photoresist is negativity
Photoresist.
4. the preparation method of up-conversion device according to claim 2, which is characterized in that in the InGaAs/InP extension
After applying the first photoresist on the first surface of piece, lenticule template is placed on it is applied with described the first of the photoresist
Before on surface, further includes: heat 1-60min at 100-150 DEG C to the InGaAs/InP epitaxial wafer.
5. the preparation method of up-conversion device according to claim 4, which is characterized in that from the InGaAs/InP extension
On piece is removed after the lenticule template, further includes: is exposed to the InGaAs/InP epitaxial wafer, is dried and develop afterwards
Processing.
6. the preparation method of up-conversion device according to claim 2, which is characterized in that the preparation of the lenticule template
Method includes the following steps:
One substrate is provided；
Apply the second photoresist on the surface of the substrate, and carry out front baking, exposure, development and rear baking processing, in institute
State the model for being formed on substrate and there is the lenticule curve form；
The material solution for being used to make the lenticule template is applied to the substrate for being formed with the model；
Curing process is carried out to the substrate, and by the material for being used to make the lenticule template after solidification from the substrate
Upper removing, to obtain the lenticule template.
7. the preparation method of up-conversion device according to claim 6, which is characterized in that described described micro- for making
The material solution of mirror template is dimethyl silicone polymer and curing agent according to the mixed liquor that volume ratio is that 5-20:1 is configured.
8. the preparation method of up-conversion device according to claim 6, which is characterized in that second photoresist is positivity
Photoresist.
9. the preparation method of up-conversion device according to claim 1 to 8, which is characterized in that described
At least one OLED is formed on the second surface of InGaAs/InP epitaxial wafer, is included the following steps:
Photoetching is carried out to the InGaAs/InP epitaxial wafer, and the InGaAs/InP epitaxial wafer after photoetching is immersed into acid etching liquid
In perform etching；
Insulating layer is grown on InGaAs/InP epitaxial wafer after etching；
Secondary photoetching is carried out to the InGaAs/InP epitaxial wafer, and the InGaAs/InP epitaxial wafer after secondary photoetching is carved
Erosion；
Mask plate is set on the second surface of the InGaAs/InP epitaxial wafer；
Organic light-emitting units layer, intermediate connecting layer and electrode layer is deposited, to be formed at least on the InGaAs/InP epitaxial wafer
One OLED.
10. the preparation method of up-conversion device according to claim 9, which is characterized in that the insulating layer is silicon nitride
Or silica.
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