CN109980044A - A kind of coupling process for extension wavelength InGaAs focus planar detector - Google Patents
A kind of coupling process for extension wavelength InGaAs focus planar detector Download PDFInfo
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- CN109980044A CN109980044A CN201910246114.7A CN201910246114A CN109980044A CN 109980044 A CN109980044 A CN 109980044A CN 201910246114 A CN201910246114 A CN 201910246114A CN 109980044 A CN109980044 A CN 109980044A
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- fixed substrate
- adhesive
- photosensor chip
- chip
- photosensor
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- 229910000530 Gallium indium arsenide Inorganic materials 0.000 title claims abstract description 14
- 238000010168 coupling process Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 239000000853 adhesive Substances 0.000 claims abstract description 25
- 230000001070 adhesive effect Effects 0.000 claims abstract description 24
- 238000005498 polishing Methods 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 16
- 238000000926 separation method Methods 0.000 claims abstract description 12
- 230000002238 attenuated effect Effects 0.000 claims abstract description 9
- 238000007711 solidification Methods 0.000 claims abstract description 7
- 230000008023 solidification Effects 0.000 claims abstract description 7
- 238000004528 spin coating Methods 0.000 claims abstract description 7
- 239000011248 coating agent Substances 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims abstract description 4
- 239000000945 filler Substances 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 claims description 3
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229960002415 trichloroethylene Drugs 0.000 claims description 3
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 claims description 3
- 229940022682 acetone Drugs 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 239000003960 organic solvent Substances 0.000 abstract description 2
- 238000012545 processing Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- 239000012188 paraffin wax Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- -1 Hydrogen furans Chemical class 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
Abstract
The invention discloses a kind of coupling process for extension wavelength InGaAs focus planar detector, specific step is as follows: 1) pasting photosensor chip, 2) attenuated polishing, 3) coating adhesive, 4) stickup fixed substrate, 5) solidification adhesive, 6) separation polishing substrate, 7) photosensor chip is coupled with reading circuit, and 8) underfill may, 9) separation fixed substrate.The present invention is by introducing fixed substrate after photosensor chip attenuated polishing, guarantee that photosensor chip has good flatness in coupling process, reduce the alignment difficulty between flip chip bonding Shi Qiyu reading circuit, coupled interconnection efficiency and quality are improved, solves the problems, such as that the focus planar detector electric property caused by the self-deformation of extension wavelength photosensor chip and reliability reduce.Adhesive is insoluble in organic solvent used in common process simultaneously, and is coated on fixed substrate surface using spin coating mode, simple process, strong operability, reproducible, and has good processing compatibility and versatility.
Description
Technical field
The present invention relates to the technologies of preparing of focus planar detector, in particular to one kind to be used for the focal plane extension wavelength InGaAs
The coupling process of detector, it is suitable for preparing the InGaAs focus planar detector of extension wavelength, high reliability, solve due to
The problem of focus planar detector electric property caused by the self-deformation of extension wavelength photosensor chip and reliability reduce.
Background technique
Short-wave infrared InGaAs detector has many advantages, such as nearly working and room temperature, high-quantum efficiency, low-dark current, in space day
There is significant application value in the fields such as text, air remote sensing, military surveillance, become high sensitivity, low-power consumption, high reliability short-wave infrared
The ideal chose of system.Under the traction of application demand, high performance extension wavelength InGaAs detector become one it is important
Research and development direction, and with the technical need that short-wave infrared imaging technique develops to high-resolution, the scale of detector
It is being continuously increased.
InxGa1-xAs is III-V race's direct band-gap semicondictor material, when In group is divided into 0.53, In0.53Ga0.47As and
Complete Lattice Matching may be implemented in InP substrate.In order to extend the detection wavelength of InGaAs detector, need to increase the component of In,
But for high In ingredient InGaAs detector, the lattice of epitaxial material and InP substrate be will not be matched, and between the two
Lattice mismatch increase with the increase of In content.Therefore the photosensor chip developed for epitaxial material, flatness is poor,
It is easy to produce warpage, and the stress introduced in photosensor chip attenuated polishing may also will increase its angularity.Meanwhile this
Kind warping phenomenon can become apparent with the increase of detector scale.This will lead to be difficult to ensure during flip chip bonding
High-precision between photosensor chip and reading circuit is aligned and matches, and reduces electric communication rate, to influence photosensor chip and read
The coupled interconnection quality of circuit out reduces the electric property and reliability of focus planar detector.
Summary of the invention
Based on above-mentioned extension wavelength InGaAs photosensor chip and the problem of reading circuit coupling process and develop
Demand, the invention proposes a kind of coupling process for extension wavelength InGaAs focus planar detector, advantageously ensure that photosensitive
Chip has good flatness in coupling process, alignment difficulty when reducing flip chip bonding between photosensor chip and reading circuit,
Coupled interconnection quality is improved, solves the focus planar detector electricity caused by the self-deformation of extension wavelength photosensor chip
The problem of Performance And Reliability reduces.
A kind of coupling process for extension wavelength InGaAs focus planar detector of the invention, includes the following steps:
1 pastes photosensor chip, first carries out gluing protection to the positive indium column 3 of photosensor chip 1 with positive photoresist 2, guarantees
Indium column 3 is completely covered, and paraffin 4 is reused after drying, 1 front of photosensor chip is affixed on polishing substrate 5, structure such as 1 institute of attached drawing
Show, and after patch 1 back side of photosensor chip flatness less than 10 μm；
2 attenuated polishings carry out attenuated polishing using the back side of the cmp method to photosensor chip 1, make its thickness
5~50 μm are reduced, the flatness at 1 back side of photosensor chip is less than 5 μm after polishing；
Adhesive 7, is covered the front of fixed substrate 6 by 3 coating adhesives, reuses the thickness of sol evenning machine control adhesive 7
Degree makes it be evenly applied to 6 front of fixed substrate, spin coating condition are as follows: revolving speed is 500~2000 revs/min, Shi Changwei 5~20 seconds；
4 paste fixed substrates, are overturn after the back side of fixed substrate 6 is lived using sucker suction, then by fixed substrate 6
Front is aligned and pastes with the back side of photosensor chip 1, and structure is as shown in Fig. 2, and bonding place is without visible bubble in bubble；
The sample of structure shown in attached drawing 2 is put into baking oven by 5 solidification adhesives, and heat is dried under the conditions of 20~50 DEG C of temperature,
Guarantee that adhesive 7 is fully cured；
6 separation polishing substrates, the sample of structure shown in attached drawing 2 is placed in 60 DEG C of heating plates, paraffin 4 is melted, separation
Polish substrate 5, cleaning sample；
7 photosensor chips are coupled with reading circuit, by the photosensor chip 1 for posting fixed substrate 6 and are read using face-down bonding technique
Circuit 8 is aligned out, and structure is as shown in Fig. 3, is then carried out photosensor chip 1 and reading circuit 8 by flip chip method
Coupled interconnection；
Filler 9 is filled into the gap between photosensor chip 1 and reading circuit 8, and keeps filler 9 complete by 8 underfill mays
All solidstate, structure are as shown in Fig. 4；
9 separation fixed substrates, remove adhesive 7, remove fixed substrate 6, cleaning sample, final sample structure such as attached drawing 5
It is shown.
The fixed substrate 6 is sapphire sheet double-polished chip, and for flatness less than 5 μm, length and width dimensions are identical as photosensor chip,
With a thickness of 100~1000 μm.
The adhesive 7 is resin, and trichloro ethylene, acetone and dehydrated alcohol are insoluble in after solidification.
The filler 9 is insoluble in used solvent when separation fixed substrate in step 9) after hardening.
The present invention has the advantages that
1 introduces fixed substrate after photosensor chip attenuated polishing, ensure that photosensor chip is several after separating with polishing substrate
Deformation occurs, and the flatness of photosensor chip when improving flip chip bonding reduces the alignment difficulty between reading circuit, improves coupling
Interconnect efficiency and quality；
2 adhesives are insoluble in organic solvent used in common process, have good processing compatibility and versatility；
3 adhesives by spin coating mode be coated on fixed substrate surface, and using sucker overturning fixed substrate after with it is photosensitive
Chip carries out alignment stickup, simple process, strong operability and reproducible.
Detailed description of the invention
Fig. 1 is that the present invention pastes the schematic diagram of the section structure after photosensor chip；
Fig. 2 is that the present invention pastes the schematic diagram of the section structure after fixed substrate；
Fig. 3 is the schematic diagram of the section structure after photosensor chip of the present invention is aligned with reading circuit；
Fig. 4 is the schematic diagram of the section structure after underfill may of the present invention；
Fig. 5 is the schematic diagram of the section structure after present invention separation fixed substrate；
Fig. 6 is process flow chart of the invention；
In figure:
1-photosensor chip；
2-positive photoresists；
3-indium columns；
4-paraffin；
5-polishing substrates；
6-fixed substrates；
7-adhesives；
8-reading circuits；
9-fillers.
Specific embodiment
The present invention is further explained in the following with reference to the drawings and specific embodiments, but not as the limitation of the invention.
As shown in attached drawing 1~5, the photosensor chip 1 of the present embodiment is scale 1024 × 512,2.5 μm of cutoff wavelength
InGaAs chip；Polishing substrate 5 used is glass substrate；For fixed substrate 6 used with a thickness of 400 μm, flatness is 3 μm；
Adhesive 7 used is negative photoresist；Filler 9 used is DW-3 epoxy resin.
The concrete technology flow process of the present embodiment are as follows:
1 pastes photosensor chip, first carries out gluing protection to the positive indium column 3 of photosensor chip 1 with positive photoresist 2, guarantees
Indium column 3 is completely covered, and paraffin 4 is reused after drying, 1 front of photosensor chip is affixed on polishing substrate 5, structure such as 1 institute of attached drawing
Show, the flatness at 1 back side of photosensor chip is 7 μm after patch；
2 attenuated polishings carry out attenuated polishing using the back side of the cmp method to photosensor chip 1, make its thickness
20 μm are reduced, the flatness at 1 back side of photosensor chip is 3 μm after polishing；
Adhesive 7, is covered the front of fixed substrate 6, the thickness of adhesive 7 is controlled using sol evenning machine by 3 coating adhesives,
It is set to be evenly applied to 6 front of fixed substrate, spin coating condition are as follows: revolving speed is 1000 revs/min, Shi Changwei 10 seconds；
4 paste fixed substrate, are overturn after the back side of fixed substrate 6 is lived using sucker suction, then just by fixed substrate 6
Face is aligned and pastes with the back side of photosensor chip 1, and structure is as shown in Fig. 2, and bonding place is without visible bubble in bubble；
The sample of structure shown in attached drawing 2 is put into baking oven by 5 solidification adhesives, and it is small that 2 are dried under the conditions of 40 DEG C of temperature
When, then placed 12 hours in 25 DEG C of drying boxes, guarantee that adhesive 7 is fully cured；
6 separation polishing substrates, the sample of structure shown in attached drawing 2 is placed in 60 DEG C of heating plates, paraffin 4 is melted, separation
Substrate 5 is polished, then successively uses trichloro ethylene, acetone and washes of absolute alcohol sample, is finally dried with nitrogen；
7 photosensor chips are coupled with reading circuit, by the photosensor chip 1 for posting fixed substrate 6 and are read using face-down bonding technique
Circuit 8 is aligned out, and structure is as shown in Fig. 3, is then carried out photosensor chip 1 and reading circuit 8 by pressure welding method
Coupled interconnection；
Filler 9 is filled into the gap between photosensor chip 1 and reading circuit 8, is then placed in 25 DEG C by 8 underfill mays
72 hours are stood in drying box, filler 9 is fully cured, structure is as shown in Fig. 4；
9 separation fixed substrates, sample are put into after impregnating 1 hour in tetrahydrofuran, remove fixed substrate 6, reuse four
Hydrogen furans and dehydrated alcohol are clean by 1 Wafer Backside Cleaning of photosensor chip, are dried with nitrogen later, finally obtained sample structure such as attached drawing
Shown in 5.
Claims (1)
1. a kind of coupling process for extension wavelength InGaAs focus planar detector, the specific method of coupling includes following step
It is rapid: 1) stickup photosensor chip, 2) attenuated polishing, 3) coating adhesive, 4) stickup fixed substrate, 5) solidification adhesive, 6) separation
Polish substrate, 7) photosensor chip couples with reading circuit, and 8) underfill may, 9) separate fixed substrate, it is characterised in that:
Adhesive described in step 3), material are resin, are coated using spin coating mode, need to cover in adhesive before spin coating
It is placed on fixed substrate front, spin coating condition are as follows: revolving speed is 500~2000 revs/min, Shi Changwei 5~20 seconds；
Fixed substrate described in step 4), material are sapphire sheet double-polished chip, and flatness is less than 5 μm, length and width dimensions and light
Quick chip is identical, with a thickness of 100~1000 μm；Fixed substrate is overturn by the way of sucker suction when stickup, alignment is pasted
In the photosensor chip back side；
Solidification adhesive described in step 5), is solidified using heating method, and solidification temperature range is 20~50 DEG C, and is solidified
Adhesive is insoluble in trichloro ethylene, acetone and dehydrated alcohol afterwards；
Underfill may described in step 8), filler used are made when being insoluble in separation fixed substrate in step 9) after hardening
Solvent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910246114.7A CN109980044A (en) | 2019-03-29 | 2019-03-29 | A kind of coupling process for extension wavelength InGaAs focus planar detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910246114.7A CN109980044A (en) | 2019-03-29 | 2019-03-29 | A kind of coupling process for extension wavelength InGaAs focus planar detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109980044A true CN109980044A (en) | 2019-07-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910246114.7A Pending CN109980044A (en) | 2019-03-29 | 2019-03-29 | A kind of coupling process for extension wavelength InGaAs focus planar detector |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113013285A (en) * | 2021-01-26 | 2021-06-22 | 中国科学院上海技术物理研究所 | Process method for correcting errors of reverse welding process system of focal plane detector |
| CN114477075A (en) * | 2022-01-25 | 2022-05-13 | 北京智创芯源科技有限公司 | Processing method of on-chip integrated micro-nano structure and infrared detector |
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| CN106342344B (en) * | 2009-10-21 | 2013-05-15 | 中国空空导弹研究院 | A kind of indium antimonide infrared focal plane array seeker chip and manufacture method thereof |
| CN103413863A (en) * | 2013-07-30 | 2013-11-27 | 中国科学院上海技术物理研究所 | Method for manufacturing planar indium gallium arsenic infrared detector chip with extended wavelength |
| CN106508076B (en) * | 2010-12-06 | 2014-02-19 | 中国空空导弹研究院 | A kind of transfer method for realizing large stretch of indium antimonide array chip by silicon |
| KR101738939B1 (en) * | 2016-04-05 | 2017-05-23 | 국방과학연구소 | Photodiode and method of manufacturing the same |
| CN107403812A (en) * | 2017-06-29 | 2017-11-28 | 华中光电技术研究所（中国船舶重工集团公司第七七研究所） | A kind of InGaAs detector arrays and preparation method thereof |
-
2019
- 2019-03-29 CN CN201910246114.7A patent/CN109980044A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106342344B (en) * | 2009-10-21 | 2013-05-15 | 中国空空导弹研究院 | A kind of indium antimonide infrared focal plane array seeker chip and manufacture method thereof |
| CN106508076B (en) * | 2010-12-06 | 2014-02-19 | 中国空空导弹研究院 | A kind of transfer method for realizing large stretch of indium antimonide array chip by silicon |
| CN103413863A (en) * | 2013-07-30 | 2013-11-27 | 中国科学院上海技术物理研究所 | Method for manufacturing planar indium gallium arsenic infrared detector chip with extended wavelength |
| KR101738939B1 (en) * | 2016-04-05 | 2017-05-23 | 국방과학연구소 | Photodiode and method of manufacturing the same |
| CN107403812A (en) * | 2017-06-29 | 2017-11-28 | 华中光电技术研究所（中国船舶重工集团公司第七七研究所） | A kind of InGaAs detector arrays and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113013285A (en) * | 2021-01-26 | 2021-06-22 | 中国科学院上海技术物理研究所 | Process method for correcting errors of reverse welding process system of focal plane detector |
| CN114477075A (en) * | 2022-01-25 | 2022-05-13 | 北京智创芯源科技有限公司 | Processing method of on-chip integrated micro-nano structure and infrared detector |
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Application publication date: 20190705 |