CN201749851U - Infrared focal plane detector for immersion type micro convex lens array - Google Patents
Infrared focal plane detector for immersion type micro convex lens array Download PDFInfo
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- CN201749851U CN201749851U CN2010202034955U CN201020203495U CN201749851U CN 201749851 U CN201749851 U CN 201749851U CN 2010202034955 U CN2010202034955 U CN 2010202034955U CN 201020203495 U CN201020203495 U CN 201020203495U CN 201749851 U CN201749851 U CN 201749851U
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- infrared
- focal plane
- lens array
- convex lens
- plane detector
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Abstract
The invention discloses an infrared focal plane detector for an immersion type micro convex lens array, which adopts the structural scheme that the infrared focal plane detector for the immersion type micro convex lens array of an infrared lens surface window is integrated in site in the front foresight field direction. The infrared focal plane detector for the immersion type micro convex lens array not only has the advantages that a micro convex lens array detector can inhibit the crosstalk and improve the responding efficiency, but also can reduce the size of a photosensitive unit limited by the diffraction limit by migrating a micro lens array and a foresight field coupling interface to the position of the infrared lens surface window. The utility model overcomes the defect that the micro convex lens array type infrared focal plane detector is seriously limited by the infrared diffraction limit. Meanwhile, the infrared lens surface window of the infrared focal plane detector for the immersion type micro convex lens array can be conveniently prepared from low-temperature epoxy glue, silicon dioxide, zinc sulphide and various materials with proper refractive index. Therefore, the utility model has the characteristics of reasonable structure and favorable productivity.
Description
Technical field
This patent relates to the photoelectric detector technology, is meant that specifically a kind of original position is integrated with the immersion micro convex mirror array type infrared focal plane detector of infrared minute surface window.
Background technology
Infrared focal plane array device is not only to have had the imaging sensor that infrared information obtained but also had the advanced person of the information processing function, has important in military, civilian fields such as earth observation from space, electrooptical countermeasures, robot vision, Search/Track, medical and industrial thermal imaging and guided missile precise guidances and uses widely.Because its irreplaceable status and effect, the big state of key industry in the world all classifies the infrared focal plane array device technology of preparing as give priority to high technology item.
Under the driving energetically of senior infrared application system, it is the developing stage of characteristics that Infrared Detectors has entered with big face battle array, miniaturization and multicolor etc., sees S.Horn, P.Norton, T.Cincotta, A.Stoltz, etal, " Challenges for third-generation cooled imagers ", proceeding of SPIE, Vol.5074,2003, P44-51.High-resolution is the target of Infrared Detectors development institute unremitting pursue all the time, and infrared focal plane detector of new generation has been developed into 4096 * 4096 the big face battle array of staring by single pixel, expect infrared focal plane detector scale in 2010 and will reach 10K * 10K.
But, along with big face battle array and miniaturization, the photosensitive pixel dimension of infrared focal plane detector becomes more and more littler, and electricity cross-talk between its infrared detector pixel and space cross-talk just certainly will become the key factor of restriction infrared focal plane detector high-resolution performance.
For the performance that reduces high density statuette unit photodetector is subjected to the electricity cross-talk between the more and more serious pixel and the restriction of space cross-talk, visible light cameral CCD and cmos device have adopted the optoelectronic device structure of the integrated convergence micro-convex lens array with vertical centering of pixel and equidimension of on incident field direction original position.The converging action of the micro-convex lens array that the utilization of the integrated micro-convex lens array type of such original position Infrared Detectors is integrated dorsad makes the infrared radiation of vertical irradiation on each photosensitive pixel all converge to the central area of photaesthesia unit active area.Originally be radiated at the infrared radiation of the position, neighboring area of each pixel, can both be focused at the central area of each photaesthesia pixel, thereby improve the photoelectric conversion efficiency of Infrared Detectors, and and then improve responsiveness and the detectivity of infrared focal plane detector the target infrared radiation.And, the infrared radiation of vertical irradiation on each photaesthesia pixel all converges to the central area of photosensitive first active area, thereby help increasing the spacing between the high density pixel opto-electronic conversion efficient carrier collecting region, and and then reduce space and electricity cross-talk between each photosensitive unit of the responsive first array chip of infrared light.Therefore, micro-convex lens array type infrared focal plane detector both can improve the responsiveness of high density pixel detecting chip, can suppress electricity, optics cross-talk between the little pixel again.
But, after the integrated convergence microlens array of photodetector original position, the light field coupled interface of micro-convex lens array type infrared focal plane detector has become direct-coupled diffraction limit between micro-convex lens array and forward sight light field (atmosphere, vacuum) by the diffraction limit of the indirect coupling that originally was subjected to the inner high index of refraction of photodetector.For example, when the Infrared Detectors inner refractive index was n, it was optical diffraction Airy disc radius r that corresponding Infrared Detectors is subjected to the pixel dimension of diffraction limit restriction
Airy1/n.Yet integrated in position behind the micro-convex lens array, Infrared Detectors is subjected to the pixel dimension of diffraction limit restriction directly just to become optical diffraction Airy disc radius r
AirySo, approaching or less than optical diffraction Airy disc radius r when the pixel dimension of Infrared Detectors
AiryThe time, the resolution of the integrated micro-convex lens array type of original position infrared focal plane detector will seriously be subjected to the restriction of diffraction limit.
Summary of the invention
Problem based on the existence of the integrated micro-convex lens array type of above-mentioned original position infrared focal plane detector, the purpose of this patent provides and a kind ofly can improve the responsiveness of high density pixel detecting chip and suppress electricity, optics cross-talk between the little pixel, and the detection resolution that can alleviate the high density pixel again is subjected to the new formation Infrared Detectors of the serious restriction of diffraction limit.
For achieving the above object, this patent adopts the organization plan of the infrared focal plane detector of the immersion micro convex mirror array of the integrated infrared minute surface window of original position on the forward sight field orientation.
The infrared focal plane detector of the immersion micro convex mirror array of this patent comprises: traditional infrared focal plane, micro-convex lens array and infrared minute surface window.Wherein, infrared focal plane detector is electrically connected to form by mixing and interconnecting indium post and reading circuit by infrared photosensitive first array chip.Infrared photosensitive first array chip is by substrate, and the photosensitive first array that is equipped with the radiation of response infrared target on the substrate constitutes.Said micro-convex lens array is directly integrated by the micromachined original position at the substrate back of infrared photosensitive first array chip, each dimpling mirror in the micro-convex lens array spatially, respectively vertical one by one corresponding to each the photosensitive unit in photosensitive first array, and the photosurface centre normal coincidence of the optical axis of each the dimpling mirror photosensitive unit corresponding with it.The radiation of incident infrared target converges at the central area of photosensitive first array chip pixel active area through the dimpling mirror.Be positioned at the infrared minute surface window of infrared focal plane detector forward sight light field, be made by micromachined by infrared-transparent material.Infrared minute surface window need be with the complete submergence of micro-convex lens array of infrared focal plane detector back side substrate.
Though the infrared focal plane detector of the immersion micro convex mirror array in this patent should satisfy the refractive index of infrared minute surface window less than the integrated micro-convex lens array of the original position refractive index of (being equal to the Infrared Detectors substrate), promptly satisfies n
Infrared minute surface window＜n
Micro-convex lens arrayBut the multiple infrared-transparent materials such as low temperature epoxy glue, silicon dioxide and zinc sulphide that refractive index is suitable can be made into the infrared minute surface window of the infrared focal plane detector of immersion micro convex mirror array easily.
This patent propose the infrared focal plane detector of immersion micro convex mirror array, not only have micro-convex lens array type infrared focal plane detector and can suppress electricity, optics cross-talk between the high density pixel and the advantage that improves the responsiveness of surveying.And, the infrared focal plane detector original position integrated behind the infrared minute surface window, it can also alleviate the serious restriction that the infrared focal plane detector detection performance is subjected to diffraction limit.This is relevant with the complete submergence of micro-convex lens array with the integrated infrared minute surface window of original position.Because the integrated infrared minute surface window of original position is subjected to micro-convex lens array and the direct-coupled diffraction limit of forward sight light field with script, become in the medium of integrated in position infrared minute surface window and carry out indirect coupling, thereby can further reduce to be subjected to the photosensitive elemental size of micro-convex lens array type infrared focus plane of diffraction limit restriction.
For example, the refractive index of hot epi mirror face-port mouth is n
Infrared minute surface windowThe time, Infrared Detectors is subjected to the pixel dimension of diffraction limit restriction, can be reduced into the 1/n that does not have the infrared detector pixel of integrated infrared minute surface window physical dimension
Infrared minute surface windowLaterally physical dimension is approaching or less than the Airy disc radius r at infrared detector photosensitive elements (dimpling mirror) for this
AiryThe time, be subjected to the serious restriction of diffraction limit to seem particularly important for alleviating performances such as infrared focus plane detection resolution.
The advantage of this patent is: because the refractive index of infrared minute surface window is less than the refractive index of micro-convex lens array, the infrared focal plane detector of immersion micro convex mirror array, not only have the advantage that micro-convex lens array type detector can suppress cross-talk and improve responsiveness, and can also reduce to be subjected to the photosensitive elemental size of diffraction limit restriction.Simultaneously, the multiple materials such as low temperature epoxy glue, silicon dioxide and zinc sulphide that refractive index is suitable can both be made the infrared minute surface window of the infrared focal plane detector of immersion micro convex mirror array easily.
Description of drawings
Fig. 1 is the cross-sectional view and the fundamental diagram of the infrared focal plane detector of immersion micro convex mirror array.
Embodiment
Be the mercury cadmium telluride (Hg of 10 μ m, immersion micro convex mirror array below with cut-off wavelength
1-xCd
xTe) the photovoltaic infrared focal plane detector is embodiment, and the embodiment to this patent is described in further detail in conjunction with the accompanying drawings:
See Fig. 1, the HgCdTe infrared focal plane detector of immersion micro convex mirror array comprises: the photosensitive first array chip 1 of mercury cadmium telluride, reading circuit 2, mixing and interconnecting indium post 3, micro-convex lens array 4 and infrared minute surface window 5.The infrared photosensitive first array chip 1 of mercury cadmium telluride is equipped with the photosensitive first array that responds the infrared target radiation by gallium arsenide substrate 101 in gallium arsenide substrate 101, and each photosensitive unit is made of the n type district 103 that p type floor mercury cadmium telluride 102 and boron ion are injected into knot.Micro-convex lens array 4 is to form by micromachined at gallium arsenide substrate 101 back sides of infrared photosensitive first array chip 1.The infrared minute surface window 5 that is positioned at infrared focal plane detector forward sight light field is made by micromachined for the low temperature epoxy glue.Infrared minute surface window 5 need be with the micro-convex lens array 4 complete submergences of infrared focal plane detector back side substrate.
In the present embodiment, the low temperature epoxy glue refractive index that is used to make infrared minute surface window 5 is 1.5, is 3.4 less than the refractive index of the micro-convex lens array of being made by gallium arsenide substrate 101 4.Thereby, satisfy the infrared focal plane detector n of immersion micro convex mirror array
Infrared minute surface window＜n
Micro-convex lens arrayRequirement.
The optical diffraction Airy disc radius r of infrared focus plane detection system
AirySatisfy following formula:
Wherein λ surveys wavelength,
It is optical system aperture F number.Get λ=10 μ m and
Can calculate r
Airy=40 μ m.For guaranteeing the detection resolution of infrared focal plane detector, the pixel dimension of micro-convex lens array type Infrared Detectors must be greater than 40 μ m.But, adopting the Infrared Detectors of low temperature epoxy glue as the immersion micro convex mirror array of infrared minute surface window, the pixel dimension of Infrared Detectors can narrow down to r
Airy/ n
Infrared minute surface windown
Infrared minute surface windowRefractive index with the low temperature epoxy glue is 1.5 calculating, and the minimum pixel of Infrared Detectors can be reduced into 25 μ m.This can alleviate the serious restriction that performances such as infrared focus plane detection resolution are subjected to diffraction limit.
For this reason, the HgCdTe infrared focal plane detector of the immersion micro convex mirror array of this patent proposition is rational in infrastructure and can makes.
Claims (2)
1. the infrared focal plane detector of an immersion micro convex mirror array, it comprises infrared focus plane, micro-convex lens array and infrared minute surface window, it is characterized in that: gallium arsenide substrate (101) back side at infrared photosensitive first array chip of infrared focal plane detector directly is integrated with micro-convex lens array (4) by the micromachined original position, each dimpling mirror in the described micro-convex lens array (4) spatially, respectively vertical one by one corresponding to each the photosensitive unit in photosensitive first array, and the photosurface centre normal coincidence of the optical axis of each the dimpling mirror photosensitive unit corresponding with it; Be positioned at infrared focal plane detector forward sight light field by infrared-transparent material by the infrared minute surface window (5) that micromachined is made, described infrared minute surface window (5) is with the complete submergence of micro-convex lens array on the infrared focal plane detector back side gallium arsenide substrate (101); The infrared target radiation of incident converges at the central area of photosensitive first array chip pixel active area through the dimpling mirror by infrared minute surface window.
2. the infrared focal plane detector of a kind of immersion micro convex mirror array according to claim 1, it is characterized in that: the refractive index of described infrared minute surface window (5) material should satisfy:
n
Infrared minute surface window＜n
Micro-convex lens array
For the lenticule of being made by gallium arsenide substrate, the material of infrared minute surface window (5) adopts low temperature epoxy glue, silicon dioxide or zinc sulphide.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010202034955U CN201749851U (en) | 2010-05-21 | 2010-05-21 | Infrared focal plane detector for immersion type micro convex lens array |
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| CN2010202034955U CN201749851U (en) | 2010-05-21 | 2010-05-21 | Infrared focal plane detector for immersion type micro convex lens array |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101894847A (en) * | 2010-05-21 | 2010-11-24 | 中国科学院上海技术物理研究所 | Infrared focal plane detector of in-situ integrated immersion micro convex mirror array |
| CN107403812A (en) * | 2017-06-29 | 2017-11-28 | 华中光电技术研究所（中国船舶重工集团公司第七七研究所） | A kind of InGaAs detector arrays and preparation method thereof |
-
2010
- 2010-05-21 CN CN2010202034955U patent/CN201749851U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101894847A (en) * | 2010-05-21 | 2010-11-24 | 中国科学院上海技术物理研究所 | Infrared focal plane detector of in-situ integrated immersion micro convex mirror array |
| CN101894847B (en) * | 2010-05-21 | 2011-11-02 | 中国科学院上海技术物理研究所 | Infrared focal plane detector of in-situ integrated immersion micro convex mirror array |
| CN107403812A (en) * | 2017-06-29 | 2017-11-28 | 华中光电技术研究所（中国船舶重工集团公司第七七研究所） | A kind of InGaAs detector arrays and preparation method thereof |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20110216 Effective date of abandoning: 20111102 |
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| AV01 | Patent right actively abandoned |
Granted publication date: 20110216 Effective date of abandoning: 20111102 |