CN102931201A - Energy-gathering micro-mirror array based on infrared focal plane array and manufacturing method thereof - Google Patents

Energy-gathering micro-mirror array based on infrared focal plane array and manufacturing method thereof Download PDF

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Publication number
CN102931201A
CN102931201A CN2011102298632A CN201110229863A CN102931201A CN 102931201 A CN102931201 A CN 102931201A CN 2011102298632 A CN2011102298632 A CN 2011102298632A CN 201110229863 A CN201110229863 A CN 201110229863A CN 102931201 A CN102931201 A CN 102931201A
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hole
micro mirror
focal plane
infrared focal
lenticule
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闫建华
朱慧珑
欧文
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Institute of Microelectronics of CAS
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Institute of Microelectronics of CAS
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Abstract

The invention provides an energy-collecting micromirror array based on an infrared focal plane array, which comprises a plurality of energy-collecting micromirror units positioned on a substrate, wherein each energy-collecting micromirror unit comprises a through hole and a microlens, the upper port of each through hole is not smaller than the lower port, and the side wall of each through hole is arranged between the upper port and the lower port; the micro lens covers the upper port of the through hole; the micro-mirror unit comprises a through hole, at least one energy-collecting micro-mirror unit and at least one micro-mirror unit, wherein the upper port of the through hole in the at least one energy-collecting micro-mirror unit is larger than the lower port, the micro-mirror unit also comprises a micro-mirror covering the inner side wall of the through hole, and the micro-mirror reflects light rays incident on the micro-mirror through the micro-; and the lower port of the through hole in the energy-collecting micro-mirror unit corresponds to the photosensitive absorption area of the infrared focal plane array. Correspondingly, the invention also provides a manufacturing method of the energy-gathering micro-mirror array based on the infrared focal plane array. The invention can reduce the waste of incident light and improve the filling factor of the infrared focal plane array integrated with the energy-gathering micro mirror array.

Description

Based on cumulative micro mirror array of infrared focal plane array and preparation method thereof
Technical field
The present invention relates to infrared imaging cumulative field, particularly relate to cumulative micro mirror array based on infrared focal plane array and preparation method thereof.
Background technology
Infrared imagery technique has in the civil and military field very widely to be used, it is one of irreplaceable practical technique of military field always, as being used for remote warning system and weapon-aiming system, individual soldier's portable night vision instrument, helmet night vision device and Infra-Red Search ﹠ Track System etc., and the design of IRFPA (infrared focal plane array, infrared focal plane array) is again a technology of the most core in the infrared imaging system.Arranging light-sensing element array on the focal plane of IRFPA, pass through optical system imaging on these photo-sensitive cells of infrared focus plane from the infrared ray of unlimited distance emission, the detector that comprises IRFPA is converted to the signal of telecommunication with the light signal that receives and carries out integration amplification, sampling maintenance, by output buffering and multiplex system, finally send to surveillance and form image.
The photosensitive uptake zone scope of the photo-sensitive cell of the IRFPA that has developed at present is smaller, see Fig. 1, it is the photo-sensitive cell schematic diagram of IRFPA among the figure, 102 of the photosensitive uptake zones of photo-sensitive cell 101 account for about 40% of photo-sensitive cell area, about 40% of incident light 103 is absorbed by photo-sensitive cell, other about 60% incident light can not be utilized by photo-sensitive cell, and this part light that is wasted is called " death ray ".The light that the fill factor, curve factor of infrared focal plane array is effectively utilized by infrared focal plane array accounts for the ratio of incident light, and the fill factor, curve factor of existing infrared focal plane array is about 40%.Along with the further research of infrared focal plane array, the Area Ratio regular meeting of photosensitive uptake zone in the focal plane is more and more less, so how to collect " death ray " that those can not be utilized, the fill factor, curve factor that improves IRFPA is a urgent problem.The monolithic of microlens array and IRFPA is integrated, the optimum method that addresses this problem just.The integrated cumulative lenticule of monolithic forward is the development trend of Infrared Detectors and infrared focal plane array device microminiaturization on Infrared Detectors and infrared focal plane array.Fig. 2 is in the lenticular principle schematic of the integrated cumulative of photo-sensitive cell forward, and incident light 103 shines photo-sensitive cell 101 front elder generations by cumulative lenticule integrated above photo-sensitive cell 104 refractions, and incident light is gathered on the photosensitive uptake zone 102 of photo-sensitive cell.Lenticular integrated make " death ray " that can not be utilized of cumulative gathers photosensitive uptake zone, can make in theory the fill factor, curve factor of photo-sensitive cell reach 100%.
In the development of present cumulative microlens array, adopt " melting photoresist melts---etching shifts " legal system to make the cumulative microlens array, its manufacturing process is first melting photoresist, the array of formation take photoresist as material, and then shift photoetching offset plate figure to silicon substrate with etchings such as argon ions, finally obtain the microlens array take silicon as material, as shown in Figure 3, comprise a plurality of lenticules unit 201 (shown in the dotted line frame) in the cumulative microlens array, can converge the convex lens 202 of light and the planar shaped lens 203 that the edge can not converge incident ray in the middle part of the lens in such cumulative micro mirror unit comprise.The problem that prior art exists is, exist the edge can not assemble the planar lens of incident light in the lenticule unit that adopts the method to make, the light that incides the planar lens place of lenticule unit can not be refracted into the photosensitive uptake zone of light-sensitive element and be wasted, microlens array and other devices such as CCD (Charge-coupled Device that this method obtains, charge coupled cell), FPA (focal plane array, focal plane array) etc. when detector is integrated, can not fully assemble incident optical energy to the photosensitive uptake zone of device, fill factor, curve factor is 78.5% to the maximum, is 100% to the maximum with theoretical fill factor, curve factor and differs far away.
Summary of the invention
The invention provides a kind of cumulative micro mirror array based on infrared focal plane array, can improve the fill factor, curve factor that forward is integrated with the infrared focal plane array of microlens array.
For addressing the above problem, the invention provides a kind of cumulative micro mirror array based on infrared focal plane array, comprise a plurality of cumulative micro mirror unit that are positioned at substrate,
Described cumulative micro mirror unit comprises through hole and lenticule, wherein,
The upper port of described through hole is not less than lower port, is the sidewall of through hole between upper port and the lower port;
Described lenticule covers the upper port of described through hole;
Wherein, comprise micro-reflector at least one cumulative micro mirror unit,
Micro-reflector covers the sidewall of described through hole, and described micro-reflector will be incident on light reflection on the micro-reflector to the lower port of through hole by lenticule;
The through hole upper port of the described cumulative micro mirror unit that comprises micro-reflector is greater than lower port;
The through hole lower port is corresponding with the photosensitive uptake zone of infrared focal plane array in the described cumulative micro mirror unit.
Preferably, the upper port close-packed arrays of through hole forms void-free plane in a plurality of described cumulative micro mirror unit.
Preferably, the upper port of through hole is parallelogram, square or regular hexagon in the described cumulative micro mirror unit.
Preferably, all comprise micro-reflector in the described cumulative micro mirror unit.
Wherein, the lower port of through hole is identical with the upper port shape in the described cumulative micro mirror unit, and the sidewall of through hole comprises a plurality of planes.
Wherein, the lower port of through hole is circular in the described cumulative micro mirror unit, and the madial wall of through hole is curved surface.
Wherein, the lenticule in the described cumulative micro mirror unit can converge the lenticule of incident light and the lenticule that the edge can not converge incident light in the middle part of comprising.
Wherein, described cumulative micro mirror unit also comprises the second through hole and the second lenticule that is arranged in substrate except the first through hole and the first lenticule, wherein,
The upper port of the upper port of described the second through hole and the first through hole has a limit;
Described the second lenticule covers the upper port of described the second through hole, will incide light on the second lenticule and all be refracted to the lower port of the second through hole;
The lower port of described the second through hole is corresponding with the photosensitive uptake zone of infrared focal plane array.
Wherein, in the described cumulative micro mirror unit except the first micro-reflector that covers the through hole madial wall, comprise also between through hole upper port and the lenticule that the surface is the second micro-reflector of reflecting surface, this second micro-reflector is perpendicular to substrate, upper port is identical with the lower port shape, and lower port overlaps with the upper port of through hole.
Preferably, the micro-reflector material in the described cumulative micro mirror unit is aluminium, copper, iron or nickel alloy.
Preferably, the lenticule in the described cumulative micro mirror unit is refractive lenses or diffraction type lens.
Preferably, the lenticule in the described cumulative micro mirror unit is convex lens.
Preferably, the convex lens material in the described cumulative micro mirror unit is silicon.
Preferably, the lenticule in the described cumulative micro mirror unit is shelly dome shape lens or the plane lens of shelly.
Preferably, the microlens material in the described cumulative micro mirror unit is polycarbonate or polystyrene PS.
Accordingly, also provide a kind of manufacture method of the cumulative micro mirror array based on infrared focal plane array, comprising:
Etch the through hole that a plurality of upper port are not less than lower port in substrate, the lower port of through hole is corresponding with the photosensitive uptake zone of IRFPA;
Make micro-reflector and micro-reflector protective layer in upper port greater than the through-hole side wall of lower port;
In the through hole of substrate, fill the lenticule expendable material;
Make lenticule in the through hole upper port that is filled with the lenticule expendable material;
Discharge lenticule expendable material and micro-reflector protective layer in the through hole.
Wherein, the manufacture method of described cumulative micro mirror array based on infrared focal plane array also comprises:
Adopt optical cement will be manufactured with micro-reflector and lenticular substrate and infrared focal plane array and paste, make the lower port of through hole corresponding with the photosensitive uptake zone of infrared focus plane.
Wherein, the manufacture method of described cumulative micro mirror array based on infrared focal plane array comprises the substrate fabrication step:
Remove the infrared focal plane array of photosensitive uptake zone sacrifice layer as substrate take etching not;
Deposit spathic silicon layer on above-mentioned substrate.
Wherein, the manufacture method of described cumulative micro mirror array based on infrared focal plane array etches the through hole that a plurality of upper port are not less than lower port in described polysilicon layer, and the lower port of described through hole is exposed the photosensitive uptake zone of infrared focal plane array;
Wherein, the manufacture method of described cumulative micro mirror array based on infrared focal plane array also comprises the sacrifice layer of the photosensitive uptake zone that discharges infrared focal plane array.
Compared with prior art, the present invention has following advantages:
Cumulative micro mirror array based on infrared focal plane array of the present invention comprises a plurality of cumulative micro mirror unit that are positioned at substrate, comprises in the described cumulative micro mirror unit that upper port is not less than through hole and the lenticule of lower port, and lenticule covers the upper port of described through hole; Wherein comprise micro-reflector at least one cumulative micro mirror unit, comprise that the through hole upper port of cumulative micro mirror unit of micro-reflector is greater than lower port, described micro-reflector covers on the sidewall between through hole upper port and the lower port, and micro-reflector will be incident on light reflection on the micro-reflector to the lower port of through hole by lenticule; The through hole lower port is corresponding with the photosensitive uptake zone of infrared focal plane array in the described cumulative micro mirror unit.The lenticule that is arranged in like this through hole upper port makes incident optical energy be refracted to its below by lenticule, incident ray is radiated on the lower port or micro-reflector of through hole after reflecting through lenticule, micro-reflector will shine light reflection on it to the lower port of through hole, after cumulative micro mirror array and infrared focal plane array were integrated, the light by through hole lower port in the substrate was absorbed by the photosensitive uptake zone of infrared focal plane array.Make so the photosensitive uptake zone that converges in infrared focal plane array after the effect of incident light by the cumulative micro mirror array, " death ray " that be wasted in the incident light reduced, can improve the fill factor, curve factor of infrared focal plane array.
In addition, cumulative micro mirror array of the present invention can adopt optical cement and infrared focal plane array to be pasted together, and perhaps can directly make cumulative micro mirror array, convenient the integrated of cumulative micro mirror array and infrared focus plane of realizing on infrared focus plane.
Description of drawings
Shown in accompanying drawing, above-mentioned and other purpose of the present invention is more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Deliberately do not draw accompanying drawing according to actual size equal proportion convergent-divergent, focus on illustrating purport of the present invention.
Fig. 1 is the position view of photosensitive uptake zone in light-sensitive element in the infrared focal plane array;
Fig. 2 is the cumulative schematic diagram that increases the cumulative lens above the light-sensitive element of infrared focal plane array;
Fig. 3 is the vertical view of existing cumulative micro mirror array;
Fig. 4 to Figure 10 is the schematic diagram of first embodiment of the invention;
Figure 11 to Figure 12 is the schematic diagram of second embodiment of the invention;
Figure 13 is the making flow chart of the cumulative micro mirror array based on infrared focal plane array of the present invention;
Figure 14 to Figure 20 is for making the schematic flow sheet of a cumulative micro mirror unit among the present invention;
Figure 21 is the generalized section that cumulative micro mirror array of the present invention and infrared focus plane are pasted together;
Figure 22 is the schematic diagram of third embodiment of the invention;
Figure 23 is the schematic diagram of fourth embodiment of the invention.
Embodiment
In the existing infrared focus plane monolithic integral micro-lens array technique, adopt the lenticule unit in the cumulative microlens array of " melting photoresist melts---etching shifts " method preparation to have the planar lens that can not converge incident light, only incide the middle part, unit and can converge the photosensitive uptake zone that the incident ray of the convex lens of incident light gathers infrared focus plane, the incident ray that shines planar lens can not be refracted into photosensitive uptake zone and be wasted, and therefore the fill factor, curve factor maximum of the infrared focal plane array of existing monolithic forward integral micro-lens array can only reach 78.5%.Lenticule of the present invention refers to the device that all can transmitted light, is not to be limited to convex lens and concavees lens.
The present invention proposes a kind of cumulative micro mirror array based on infrared focal plane array, the incident light that the method that adopts lenticule and micro-reflector to combine will shine the cumulative micro mirror array converges to the photosensitive uptake zone of infrared focal plane array, can improve like this fill factor, curve factor of infrared focus plane.For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.
A lot of details have been set forth in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here and implement, those skilled in the art can be in the situation that do similar popularization without prejudice to intension of the present invention, so the present invention is not subjected to the restriction of following public specific embodiment.
Secondly, the present invention is described in detail in conjunction with schematic diagram, when the embodiment of the invention is described in detail in detail; for ease of explanation; the profile of expression device architecture can be disobeyed general ratio and be done local the amplification, and described schematic diagram is example, and it should not limit the scope of protection of the invention at this.The three-dimensional space that in Practical manufacturing, should comprise in addition, length, width and the degree of depth.
Embodiment one:
Lenticule adopts the thin layer convex lens in the present embodiment, and body silicon is adopted in substrate, also can adopt other materials.
The schematic top plan view of the cumulative micro mirror array based on infrared focal plane array of the present invention is seen Fig. 4, the cumulative micro mirror array comprises cumulative micro mirror unit 300 (shown in the dotted line frame), comprise the through hole that is produced in the body silicon in the cumulative micro mirror unit 300, upper port 301 sizes of through hole are greater than lower port 302, madial wall at through hole is coated with micro-reflector 303, lenticule covers the upper port of through hole, and the lenticule here is the thin layer convex lens.The upper and lower port of through hole in the present embodiment all is square, and the medial surface of through hole comprises 4 planes.For the structure of clearer demonstration cumulative micro mirror array, Fig. 5 is along the profile of AB line among Fig. 4.Wherein, the cumulative micro mirror array comprises cumulative micro mirror unit 300 (shown in the dotted line frame), comprises body silicon 304, micro-reflector 303 and lenticule 306 in the cumulative micro mirror unit 300.Body silicon 304 comprises through hole 305, and micro-reflector 303 covers on the madial wall of through hole, and the upper port of through hole is greater than lower port, and lenticule 306 is the thin layer convex lens, and the edge of these thin layer convex lens overlaps with the upper port of through hole.Thin layer convex lens in the present embodiment are refracted to the lower port of through hole or the madial wall of micro-reflector with parallel incident ray, and micro-reflector will be radiated at light reflection on the micro-reflector to the through hole lower port.
See Fig. 6 after the cumulative micro mirror array of the present embodiment and infrared focal plane array forward are integrated, the photosensitive uptake zone 307 of the lower port of the through hole of cumulative micro mirror unit 300 and infrared focal plane array integrates, light by the through hole lower port can both be absorbed by the photosensitive uptake zone of infrared focal plane array, the present invention can make " death ray " that be wasted in the incident light to reduce, and has improved the fill factor, curve factor of infrared focal plane array.
Through hole lower port shape in the present embodiment substrate can be different from upper port, for example can be circular, and the sidewall of through hole is arc; Micro-reflector can the partial coverage through hole madial wall, for example only cover in the through hole medial surface near upper port.
According to the arrangement mode of photosensitive uptake zone in the infrared focal plane array, the bottom shape of thin layer convex lens can be square, rectangle or parallelogram in the present embodiment.In the cumulative micro mirror array of the present embodiment, when linking together, the through hole upper port of adjacent cumulative micro mirror can be close-packed arrays, can not close-packed arrays according to the arrangement mode of photosensitive uptake zone yet.
The reflecting surface material of the micro-reflector in the present embodiment is the metals such as aluminium, copper or iron, such as polished aluminum, hair side aluminium, conventional aluminium, polish copper, bronze, cupric oxide, ferrous oxide, iron oxide, polishing iron, zinc-plated glossy iron etc.The reflecting surface material also can be alloy material, such as corronil, inconel etc.Microlens material is silicon or organic substance, and organic substance is polycarbonate, polystyrene PS or photoresist for example.
Lenticule in the present embodiment also can adopt the shelly lens of other shapes, Fig. 7 is that employing shelly spherical lens are lenticular generalized section, shelly ellipsoid type lens 315 are arranged in the upper port of body silicon 314 through holes, and its edge overlaps with the upper port of through hole.Fig. 8 is that employing shelly planar lenses is lenticular generalized section, and shelly planar lenses 325 is positioned at the through hole upper port of body silicon 324, and its edge overlaps with the upper port of through hole.The material of shelly ellipsoid type lens and shelly planar lenses is polycarbonate or polystyrene PS.Fig. 9 adopts the lenticular generalized section of diffraction type, and diffraction type lenticule 335 is arranged in the upper port of body silicon 334 through holes, and its edge overlaps with the upper port of through hole.The lenticular material of diffraction type is polyolefin or glass, and one surface is the plane, the another side imprinting ascending concentric circles, the lenticular vertical view of diffraction type is seen Figure 10.
Embodiment two:
Can converge the lenticule of incident light and the lenticule that the edge can not converge incident light in the middle part of the lenticule that adopts in the present embodiment comprises, the through hole that is coated with micro-reflector is produced in the body silicon, also can be produced in the other materials.
The profile based on the cumulative micro mirror array of infrared focal plane array of the present embodiment is seen Figure 11, the cumulative micro mirror array comprises cumulative micro mirror unit 400 (shown in the dotted line frame), comprises through hole, micro-reflector 402 and lenticule 403 in the body silicon 401 in the cumulative micro mirror unit 400.Wherein, the lower surface of lenticule 403 is the plane; The edge of upper surface is the plane, and the middle part raises up.The middle part of lenticule 403 is for converging the convex lens of incident ray, and the edge is not for converging the planar lens of light.Micro-reflector 402 covers upper port greater than the through hole medial surface of lower port, and the outward flange of lenticule 403 overlaps with the upper port of through hole.Lenticule 403 in the present embodiment is refracted to parallel incident ray on the lower port or micro-reflector of through hole, and micro-reflector will shine thereon light reflection to the lower port of through hole.After the cumulative micro mirror array of the present embodiment and infrared focal plane array are integrated, light by the micro-reflector lower port can both be absorbed by the photosensitive uptake zone of infrared focal plane array, the present invention can make " death ray " that be wasted in the incident light to reduce, and has improved the fill factor, curve factor of infrared focal plane array.The convex lens bottom shape at lenticule middle part can be circle, regular hexagon, square etc.
The lenticule of the present embodiment also can adopt organic substance shell shape lens, and Figure 12 is that employing organic substance shell shape lens are lenticular generalized section.The middle part of organic substance shell shape lens 413 is for converging the shell shape convex lens of incident ray, and the edge is not for converging the planar lens of light.This lenticule is arranged in the upper port of the through hole of body silicon 411, and its outward flange overlaps with the upper port of through hole.
The manufacture method flow process of the cumulative micro mirror array based on infrared focal plane array of the present invention is seen Figure 13, comprising:
Step S1 etches the through hole that a plurality of upper port are not less than lower port in substrate, and the lower port of through hole is corresponding with the photosensitive uptake zone of IRFPA;
Step S2 makes micro-reflector and micro-reflector protective layer in upper port greater than the through-hole side wall of lower port;
Step S3 fills the lenticule expendable material in the through hole of substrate;
Step S4 makes lenticule in the through hole upper port that is filled with the lenticule expendable material;
Step S5 discharges lenticule expendable material and micro-reflector protective layer in the through hole.
In order to realize the making of the cumulative micro mirror array based on infrared focal plane array of the present invention, can adopt 2 kinds of substrates to realize the making of cumulative micro mirror array of the present invention.A kind of is take body silicon or other materials as substrate, makes the cumulative micro mirror array based on infrared focal plane array of the present invention thereon; Another kind is the sacrifice layer that does not discharge photosensitive uptake zone behind the photosensitive uptake zone of the infrared focus plane that completes, and deposit spathic silicon layer on the photosensitive uptake zone of infrared focus plane is made the cumulative micro mirror array thereon take this multilayer silicon as substrate.
When making the cumulative lenticule, lenticular manufacture method has melting photoresist to melt-etching transfer method and organic substance heat fusing expanding method.Specifically introduce making step of the present invention below in conjunction with accompanying drawing as an example of the cumulative micro mirror unit of the present embodiment example:
Step S1 etches the through hole that a plurality of upper port are not less than lower port in substrate, and the lower port of through hole is corresponding with the photosensitive uptake zone of IRFPA.
See Figure 14, at the body silicon 500 upper surface spin coating photoresists 501 of twin polishing and be photo-etched into parallelogram or regular hexagon.Adopt KOH solution to carry out the opposite sex and be etched in and etch compact arranged through hole 502 in the body silicon, comprise that upper port is greater than the through hole of lower port through hole.Here amplified the edge thickness of through hole upper port, the edge of through hole upper port is very little in the reality.
Step S2 makes micro-reflector and micro-reflector protective layer in upper port greater than the through-hole side wall of lower port.
See Figure 15, the through hole 502 interior splash-proofing sputtering metal aluminium laminations 503 in body silicon, the thickness of this layer metallic aluminium is 200nm approximately.Also can adopt copper, iron or nickel alloy material as reflecting mirror material, the surface of speculum can be minute surface, hair side etc.
Then adopt low temperature deposition method deposition of silica layer 504 on the surface of speculum.The effect of this layer silicon dioxide is protection metal aluminium lamination in follow-up manufacturing process.Then be etched away metallic aluminium and the silicon dioxide of through hole lower port, last etching is removed the photoresist 501 of body silicon upper surface.
Step S3 fills the lenticule expendable material in the through hole of substrate;
See Figure 16, in the through hole that deposits silicon dioxide layer 504, fill organic glass, polymer 505 as the lenticule sacrifice layer, remove and remain in the outer polymethyl methacrylate polymer of through hole, and this polymethyl methacrylate polymer is carried out exposure-processed 506.
Step S4 makes lenticule in the through hole upper port that is filled with the lenticule expendable material;
At first describing melting photoresist in detail melts-etching transfer method making lenticule.
The below will make lenticule, and the lenticule middle part that makes in the present embodiment is for converging the convex lens of incident ray, and the edge adopts melting photoresist to melt-making of etching transfer method for not converging the planar lens of incident ray.
See Figure 17, through the polymethyl methacrylate polymer upper surface depositing silicon substrate 507 of exposure-processed, and be etched into the shape of design, the height of silicon substrate is determined by the lenticular height of design.Spin coating photoresist 508 on layer-of-substrate silicon is etched into lenticule bottom shape behind the planarization photoresist.
Can also increase silicon to ultrared transmissivity at the lenticule deposition one deck ZnS that completes.
The above-mentioned body silicon of handling well is put into the gradual change incubator, temperature remains on interior the heating two hours of temperature range that melting photoresist melts, the photoresist melting forms the photoresist lenticule, then adopt the etching transition diagrams such as argon ion to silicon substrate, form lenticule 509 shown in Figure 180, this lenticular middle part is convex lens, and the edge is level crossing.
For adopting heat fusing expansion organic substance material method to make lenticule, the below introduces manufacturing process in detail.
See Figure 19, at the polymethyl methacrylate polymer 505 upper surface spin coating organic substances 516 through exposure-processed, this organic substance is polycarbonate or polystyrene PS, and the above-mentioned body silicon of handling well put into insulating box, temperature remains on interior heating a period of time of temperature range of organic substance heat fusing, the organic substance melting expansion forms the organic substance lenticule, sees Figure 20.
Discharge at last expendable material polymethyl methacrylate polymer below the lenticule and form cavity under the lenticule, and adopt the protective layer silicon dioxide of CF4 (carbon tetrafluoride) and CHF3 (fluoroform) dry etching removal micro-reflector.So far cumulative micro mirror unit of the present invention completes.
Adopting body silicon is after substrate fabrication goes out cumulative micro mirror array of the present invention, can cumulative micro mirror array and infrared focal plane array be pasted together with optical cement, see Figure 21, with optical cement 512 cumulative micro mirror array 513 and infrared focal plane array 510 are pasted together, make the lower port of through hole 514 in the cumulative micro mirror unit corresponding with the photosensitive uptake zone 511 of infrared focal plane array, incident light is all incided photosensitive uptake zone by the light that lenticule and micro-reflector incide the through hole lower port, by the reading circuit under the photosensitive uptake zone of infrared focus plane and transmission circuit layer 513 result of detection of infrared focus plane is being read.Integrated make " death ray " that be wasted in the incident light of cumulative micro mirror array of the present invention and infrared focus plane reduces, and is conducive to improve the fill factor, curve factor of infrared focal plane array.
Also can not discharge the sacrifice layer of photosensitive uptake zone behind the photosensitive uptake zone of the infrared focus plane that completes, deposit spathic silicon layer on the photosensitive uptake zone of infrared focus plane is made the cumulative micro mirror array thereon take this polysilicon as substrate.The through hole lower port of etching need to be exposed photosensitive uptake zone in polysilicon in the method, behind complete micro-reflector and the lenticule, discharges together sacrifice layer below the lenticule and the photosensitive uptake zone sacrifice layer below the photosensitive uptake zone.
Embodiment three:
Comprise the second through hole and the second lenticule that also comprise except the first through hole and the first lenticule in the substrate in the present embodiment in the cumulative micro mirror unit, the upper port of the upper port of described the second through hole and the first through hole has a limit; Described the second lenticule covers the upper port of described the second through hole, will incide light on the second lenticule and all be refracted to the lower port of the second through hole; The lower port of described the second through hole is corresponding with the photosensitive uptake zone of infrared focal plane array.The generalized section based on the cumulative micro mirror array of infrared focal plane array of the present embodiment is seen Figure 21.Cumulative micro mirror unit 600 (shown in the dotted line frame) comprises the micro-reflector 601 that covers the first through-hole side wall, the lenticule 602 that covers the first through hole upper port, second through hole 603 adjacent with the first through hole and covers the second lenticule 604 of the second through hole upper port.Lenticule among this embodiment is can converge the lens of light and the lens that the edge can not converge light in the middle part of comprising, the upper port that micro-reflector 601 covers through holes overlaps with the rims of the lens that can not converge light of lenticule 602 peripheries.After the cumulative micro mirror array of this embodiment and infrared focal plane array forward are integrated, light refraction by lenticule 602 is on the lower port or micro-reflector 601 of through hole, micro-reflector will shine light reflection on it to the lower port of the through hole that covers, and the lens that light can be converged in lenticule 604 middle parts will shine light on it and converge to photosensitive uptake zone, focal plane below it.The cumulative micro mirror array of this embodiment can make " death ray " that be wasted in the incident light to reduce, and has improved the fill factor, curve factor of infrared focal plane array.
Embodiment four:
In the present embodiment in the cumulative micro mirror unit except the first micro-reflector that covers the through hole madial wall, comprise also between through hole upper port and the lenticule that the surface is the second micro-reflector of reflecting surface.The profile based on the cumulative micro mirror array of infrared focal plane array of the present embodiment is seen Figure 23, cumulative micro mirror unit 700 (shown in the dotted line frame) comprises the first micro-reflector 701 that covers the through hole madial wall, lenticule 702 and the second micro-reflector 703, lenticule among this embodiment is can converge the lens of light and the lens that the edge can not converge light in the middle part of comprising, the coincident of the upper port of the second micro-reflector 703 and lenticule 702, the lower port of the second micro-reflector 703 overlaps with the upper port of micro-reflector 701, and the side of the second micro-reflector 703 is reflecting surface.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.
Although the present invention discloses as above with preferred embodiment, yet is not to limit the present invention.Any those of ordinary skill in the art, do not breaking away from the technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement that technical solution of the present invention is made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention according to any simple modification, equivalent variations and the modification that technical spirit of the present invention is done above embodiment, all still belongs in the scope of technical solution of the present invention protection.

Claims (20)

1. the cumulative micro mirror array based on infrared focal plane array is characterized in that, comprises a plurality of cumulative micro mirror unit that are positioned at substrate,
Described cumulative micro mirror unit comprises through hole, lenticule, wherein,
The upper port of described through hole is not less than lower port, is the sidewall of through hole between upper port and the lower port;
Described lenticule covers the upper port of described through hole;
Wherein, comprise micro-reflector at least one cumulative micro mirror unit,
The through hole upper port of the described cumulative micro mirror unit that comprises micro-reflector is greater than lower port;
Micro-reflector covers the sidewall of described through hole, and described micro-reflector will be incident on light reflection on the micro-reflector to the lower port of through hole by lenticule;
The through hole lower port is corresponding with the photosensitive uptake zone of infrared focal plane array in the described cumulative micro mirror unit.
2. the cumulative micro mirror array based on infrared focal plane array according to claim 1 is characterized in that, the upper port close-packed arrays of through hole forms void-free plane in a plurality of described cumulative micro mirror unit.
3. the cumulative micro mirror array based on infrared focal plane array according to claim 2 is characterized in that, the upper port of through hole is parallelogram, square or regular hexagon in the described cumulative micro mirror unit.
4. the cumulative micro mirror array based on infrared focal plane array according to claim 1 is characterized in that, all comprises micro-reflector in the described cumulative micro mirror unit.
5. the cumulative micro mirror array based on infrared focal plane array according to claim 2 is characterized in that, the lower port of through hole is identical with the upper port shape in the described cumulative micro mirror unit, and the sidewall of through hole comprises a plurality of planes.
6. the cumulative micro mirror array based on infrared focal plane array according to claim 2 is characterized in that, the lower port of through hole is circular in the described cumulative micro mirror unit, and the madial wall of through hole is curved surface.
7. according to claim 1 to 6 each described cumulative micro mirror arrays based on infrared focal plane array, it is characterized in that, can converge the lenticule of incident light and the lenticule that the edge can not converge incident light in the middle part of the lenticule in the described cumulative micro mirror unit comprises.
8. the cumulative micro mirror array based on infrared focal plane array according to claim 7 is characterized in that, described cumulative micro mirror unit also comprises the second through hole and the second lenticule that is arranged in substrate except the first through hole and the first lenticule, wherein,
The upper port of the upper port of described the second through hole and the first through hole has a limit;
Described the second lenticule covers the upper port of described the second through hole, will incide light on the second lenticule and all be refracted to the lower port of the second through hole;
The lower port of described the second through hole is corresponding with the photosensitive uptake zone of infrared focal plane array.
9. according to claim 1 to 6 each described cumulative micro mirror arrays based on infrared focal plane array, it is characterized in that, in the described cumulative micro mirror unit except the first micro-reflector that covers the through hole madial wall, comprise also between through hole upper port and the lenticule that the surface is the second micro-reflector of reflecting surface, this second micro-reflector is perpendicular to substrate, upper port is identical with the lower port shape, and lower port overlaps with the upper port of through hole.
10. according to claim 1 to 6 each described cumulative micro mirror arrays based on infrared focal plane array, it is characterized in that, the micro-reflector material in the described cumulative micro mirror unit is aluminium, copper, iron or nickel alloy.
11. to 6 each described cumulative micro mirror arrays based on infrared focal plane array, it is characterized in that according to claim 1, the lenticule in the described cumulative micro mirror unit is refractive lenses or diffraction type lens.
12. to 6 each described cumulative micro mirror arrays based on infrared focal plane array, it is characterized in that according to claim 1, the lenticule in the described cumulative micro mirror unit is convex lens.
13. the cumulative micro mirror array based on infrared focal plane array according to claim 11 is characterized in that the convex lens material in the described cumulative micro mirror unit is silicon.
14. to 6 each described cumulative micro mirror arrays based on infrared focal plane array, it is characterized in that according to claim 1, the lenticule in the described cumulative micro mirror unit is shelly dome shape lens or the plane lens of shelly.
15. to 6 each described cumulative micro mirror arrays based on infrared focal plane array, it is characterized in that according to claim 1, the microlens material in the described cumulative micro mirror unit is polycarbonate or polystyrene PS.
16. the manufacture method based on the cumulative micro mirror array of infrared focal plane array is characterized in that, comprising:
Etch the through hole that a plurality of upper port are not less than lower port in substrate, the lower port of through hole is corresponding with the photosensitive uptake zone of IRFPA;
Make micro-reflector and micro-reflector protective layer in upper port greater than the through-hole side wall of lower port;
In the through hole of substrate, fill the lenticule expendable material;
Make lenticule in the through hole upper port that is filled with the lenticule expendable material;
Discharge lenticule expendable material and micro-reflector protective layer in the through hole.
17. the cumulative micro mirror array manufacture method based on infrared focal plane array according to claim 16 is characterized in that, also comprises:
Adopt optical cement will be manufactured with micro-reflector and lenticular substrate and infrared focal plane array and paste, make the lower port of through hole corresponding with the photosensitive uptake zone of infrared focus plane.
18. the manufacture method of the cumulative micro mirror array based on infrared focal plane array according to claim 16 is characterized in that, comprises the substrate fabrication step:
Remove the infrared focal plane array of photosensitive uptake zone sacrifice layer as substrate take etching not;
Deposit spathic silicon layer on above-mentioned substrate.
19. the manufacture method of the cumulative micro mirror array based on infrared focal plane array according to claim 18 is characterized in that,
Etch the through hole that a plurality of upper port are not less than lower port in described polysilicon layer, the lower port of described through hole is exposed the photosensitive uptake zone of infrared focal plane array.
20. according to claim 18 or the manufacture method of 19 described cumulative micro mirror arrays based on infrared focal plane array, it is characterized in that, also comprise the sacrifice layer of the photosensitive uptake zone that discharges infrared focal plane array.
CN2011102298632A 2011-08-11 2011-08-11 Energy-gathering micro-mirror array based on infrared focal plane array and manufacturing method thereof Pending CN102931201A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015039303A1 (en) * 2013-09-18 2015-03-26 上海巨哥电子科技有限公司 Method for packaging uncooled focal plane array and focal plane array apparatus
CN107121770A (en) * 2017-06-13 2017-09-01 中国科学院光电技术研究所 Miniature mixed parabolic condenser array suitable for focal plane detector
CN108257999A (en) * 2018-01-24 2018-07-06 德淮半导体有限公司 Imaging sensor and the method for forming imaging sensor
CN111474614A (en) * 2020-05-14 2020-07-31 上海优周电子科技有限公司 Plane infrared detection lens

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4754139A (en) * 1986-04-10 1988-06-28 Aerojet-General Corporation Uncooled high resolution infrared imaging plane
GB2248964A (en) * 1990-10-17 1992-04-22 Philips Electronic Associated Plural-wavelength infrared detector devices
US5760398A (en) * 1995-12-04 1998-06-02 Lockheed Martin Ir Imaging Systems, Inc. Infrared radiation detector having a reduced active area
US20040214368A1 (en) * 1999-07-19 2004-10-28 Rhodes Howard E. Microlens array with improved fill factor
CN1933149A (en) * 2006-10-13 2007-03-21 中国科学院上海技术物理研究所 Backward integrated micro-lens infrared focal plane detector and micro-lens producing method
KR20100068699A (en) * 2008-12-15 2010-06-24 한국광기술원 Infra-red sensor array having micro-lens
CN101963530A (en) * 2009-07-22 2011-02-02 中国科学院微电子研究所 Method for improving infrared absorption rate of infrared sensitive unit
KR20110014707A (en) * 2011-01-31 2011-02-11 한국광기술원 Method of fabricating micro-lens array and method of manufacturing optical detector array having the lens
JP2011164491A (en) * 2010-02-12 2011-08-25 Nikon Corp Retroreflective member

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4754139A (en) * 1986-04-10 1988-06-28 Aerojet-General Corporation Uncooled high resolution infrared imaging plane
GB2248964A (en) * 1990-10-17 1992-04-22 Philips Electronic Associated Plural-wavelength infrared detector devices
US5760398A (en) * 1995-12-04 1998-06-02 Lockheed Martin Ir Imaging Systems, Inc. Infrared radiation detector having a reduced active area
US20040214368A1 (en) * 1999-07-19 2004-10-28 Rhodes Howard E. Microlens array with improved fill factor
CN1933149A (en) * 2006-10-13 2007-03-21 中国科学院上海技术物理研究所 Backward integrated micro-lens infrared focal plane detector and micro-lens producing method
KR20100068699A (en) * 2008-12-15 2010-06-24 한국광기술원 Infra-red sensor array having micro-lens
CN101963530A (en) * 2009-07-22 2011-02-02 中国科学院微电子研究所 Method for improving infrared absorption rate of infrared sensitive unit
JP2011164491A (en) * 2010-02-12 2011-08-25 Nikon Corp Retroreflective member
KR20110014707A (en) * 2011-01-31 2011-02-11 한국광기술원 Method of fabricating micro-lens array and method of manufacturing optical detector array having the lens

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015039303A1 (en) * 2013-09-18 2015-03-26 上海巨哥电子科技有限公司 Method for packaging uncooled focal plane array and focal plane array apparatus
CN105190264A (en) * 2013-09-18 2015-12-23 上海巨哥电子科技有限公司 Method for packaging uncooled focal plane array and focal plane array apparatus
CN107121770A (en) * 2017-06-13 2017-09-01 中国科学院光电技术研究所 Miniature mixed parabolic condenser array suitable for focal plane detector
CN108257999A (en) * 2018-01-24 2018-07-06 德淮半导体有限公司 Imaging sensor and the method for forming imaging sensor
CN111474614A (en) * 2020-05-14 2020-07-31 上海优周电子科技有限公司 Plane infrared detection lens
CN111474614B (en) * 2020-05-14 2022-07-01 上海优周电子科技有限公司 Plane infrared detection lens

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