CN107393970B - 一种碳化硅结势垒二极管 - Google Patents
一种碳化硅结势垒二极管 Download PDFInfo
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- CN107393970B CN107393970B CN201710749274.4A CN201710749274A CN107393970B CN 107393970 B CN107393970 B CN 107393970B CN 201710749274 A CN201710749274 A CN 201710749274A CN 107393970 B CN107393970 B CN 107393970B
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 63
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 38
- 230000004888 barrier function Effects 0.000 title claims abstract description 37
- 239000000758 substrate Substances 0.000 claims description 41
- 238000002161 passivation Methods 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052681 coesite Inorganic materials 0.000 claims description 8
- 229910052906 cristobalite Inorganic materials 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 229910052682 stishovite Inorganic materials 0.000 claims description 8
- 229910052905 tridymite Inorganic materials 0.000 claims description 8
- 238000000034 method Methods 0.000 abstract description 6
- 230000000903 blocking effect Effects 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000005468 ion implantation Methods 0.000 abstract description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 2
- 230000004913 activation Effects 0.000 abstract description 2
- 238000000137 annealing Methods 0.000 abstract description 2
- 229910052799 carbon Inorganic materials 0.000 abstract description 2
- 238000000407 epitaxy Methods 0.000 abstract description 2
- 238000005530 etching Methods 0.000 abstract description 2
- 230000008569 process Effects 0.000 abstract description 2
- 238000004088 simulation Methods 0.000 description 6
- 238000011084 recovery Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 208000032827 Ring chromosome 9 syndrome Diseases 0.000 description 1
- INQLNSVYIFCUML-QZTLEVGFSA-N [[(2r,3s,4r,5r)-5-(6-aminopurin-9-yl)-3,4-dihydroxyoxolan-2-yl]methoxy-hydroxyphosphoryl] [(2r,3s,4r,5r)-5-(4-carbamoyl-1,3-thiazol-2-yl)-3,4-dihydroxyoxolan-2-yl]methyl hydrogen phosphate Chemical compound NC(=O)C1=CSC([C@H]2[C@@H]([C@H](O)[C@@H](COP(O)(=O)OP(O)(=O)OC[C@@H]3[C@H]([C@@H](O)[C@@H](O3)N3C4=NC=NC(N)=C4N=C3)O)O2)O)=N1 INQLNSVYIFCUML-QZTLEVGFSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201710749274.4A CN107393970B (zh) | 2017-08-28 | 2017-08-28 | 一种碳化硅结势垒二极管 |
Applications Claiming Priority (1)
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CN201710749274.4A CN107393970B (zh) | 2017-08-28 | 2017-08-28 | 一种碳化硅结势垒二极管 |
Publications (2)
Publication Number | Publication Date |
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CN107393970A CN107393970A (zh) | 2017-11-24 |
CN107393970B true CN107393970B (zh) | 2020-02-14 |
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CN201710749274.4A Active CN107393970B (zh) | 2017-08-28 | 2017-08-28 | 一种碳化硅结势垒二极管 |
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CN (1) | CN107393970B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108767019A (zh) * | 2018-05-22 | 2018-11-06 | 西安电子科技大学 | 一种部分P型AlGaN帽层RESURF GaN基肖特基势垒二极管 |
WO2020042221A1 (zh) * | 2018-08-29 | 2020-03-05 | 无锡新洁能股份有限公司 | 一种高浪涌电流能力碳化硅二极管及其制作方法 |
CN111883577B (zh) * | 2020-06-16 | 2024-03-01 | 西安理工大学 | 一种SiC耐高压抗浪涌pn结单极二极管 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2081233A1 (de) * | 2007-12-21 | 2009-07-22 | SEMIKRON Elektronik GmbH & Co. KG | Leistungsdiode mit grabenförmigen Anodenkontaktbereich |
DE102011087591A1 (de) * | 2011-12-01 | 2013-06-06 | Robert Bosch Gmbh | Hochspannungs-Trench-Junction-Barrier-Schottkydiode |
JP2014041920A (ja) * | 2012-08-22 | 2014-03-06 | Rohm Co Ltd | 半導体装置 |
CN105023953A (zh) * | 2015-07-10 | 2015-11-04 | 淄博汉林半导体有限公司 | 一种垂直场效应二极管及制造方法 |
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2017
- 2017-08-28 CN CN201710749274.4A patent/CN107393970B/zh active Active
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CN107393970A (zh) | 2017-11-24 |
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Effective date of registration: 20211229 Address after: 214000 613, 614, 6 / F, building A3, 777 Jianshe West Road, Binhu District, Wuxi City, Jiangsu Province Patentee after: Wuxi ganye micro nano Electronics Co.,Ltd. Address before: 710048 No. 5 Jinhua South Road, Shaanxi, Xi'an Patentee before: XI'AN University OF TECHNOLOGY |
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CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 214000 613, 614, 6 / F, building A3, 777 Jianshe West Road, Binhu District, Wuxi City, Jiangsu Province Patentee after: Wuxi Qianye Micro Nano Technology Co.,Ltd. Address before: 214000 613, 614, 6 / F, building A3, 777 Jianshe West Road, Binhu District, Wuxi City, Jiangsu Province Patentee before: Wuxi ganye micro nano Electronics Co.,Ltd. |
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CP02 | Change in the address of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: 615, 6th Floor, Building A3, No. 777 Jianshe West Road, Binhu District, Wuxi City, Jiangsu Province, 214000 Patentee after: Wuxi Qianye Micro Nano Technology Co.,Ltd. Address before: 214000 613, 614, 6 / F, building A3, 777 Jianshe West Road, Binhu District, Wuxi City, Jiangsu Province Patentee before: Wuxi Qianye Micro Nano Technology Co.,Ltd. |