CN107393897A - 硅光电倍增器上重新图案化传输线 - Google Patents
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Abstract
本发明公开一种硅光电倍增器阵列,所述硅光电倍增器阵列包括在所述光电倍增管阵列内且位于硅晶片上的多个微单元,所述多个微单元以行和列布置,所述多个微单元中的每一个包括输出端口,并且配置成提供:具有脉冲特征的脉冲波形;与硅晶片层背表面接触的至少一个重新图案化介电层,所述硅晶片具有与所述背表面相对的有源表面;以及多个相应的硅通孔,所述硅通孔将所述硅晶片的所述有源表面上的所述多个微单元中的相应微单元的输出端口连接到设置在所述硅晶片的所述背表面的所述至少一个重新图案化介电层上的多个相应电路线路。本发明还公开了一种用于制造硅光电倍增器阵列的方法。
Description
技术领域
本申请涉及硅光电倍增器阵列(silicon photomultiplier array)以及制造硅光电倍增器阵列的方法。
背景技术
存在采用包括微单元(例如,单光子雪崩二极管(single photon avalanchediode,SPAD))的光传感器在Geiger模式下操作来进行辐射检测的方法。这些方法中的某些方法已经在大面积器件中实现,例如可以在核探测器中使用。读出像素可以由微单元(microcells)阵列构成,其中每个单独的微单元可以经由100kΩ至1MΩ之间电阻的猝灭电阻器(a quenching resistor)连接到读出网络,其称为固态光电倍增器(solid statephotomultiplier,SSPM)、硅光电倍增器(silicon photomultipliers,SiPM)、多像素光子计数(multi-pixel photon counting,MPPC)。当施加到硅光电倍增器(SiPM)的偏压高于击穿电压时,检测到的光子将产生雪崩,APD电容将放电到击穿电压,并且再充电电流将产生信号。
通常,与单个光电子(SPE)信号相关联的脉冲形状具有快速上升时间,随后是长下降时间。当检测到快速光脉冲(例如,数十纳秒的数量级)时,所述信号被聚集在形成SiPM器件的像素的大量微单元上。由于单个微单元响应使用检测到光脉冲进行卷积,所得的求和信号脉冲形状具有缓慢的上升时间(例如,几十纳秒)。因此,由于聚合信号对于给定光脉冲的上升时间缓慢,难以用这些器件实现良好的定时分辨率。
SiPM可以通过连接到器件的电线或者通过使用硅通孔(TSV)技术中实现的短垂直互连对像素输出进行电连接。微单元可以通过线路连接,并且通常每个微单元(像素)阵列的一个或几个焊盘可以用作输出(电线接合或TSV)。模拟SiPM通常需要前端电子设备来缓冲(和/或放大)来自SiPM的信号以用于进一步处理。
其上制造有SiPM的半导体晶片由于其高填充因子要求而具有有限的空间。这种有限的空间使得常规SiPM设备必须具有将单个微单元互连到光电检测器输出的窄电路线路。这些窄电路线路通常是高阻抗传输线,所述高阻抗传输线具有导致脉冲特征(形状、上升时间和下降时间)劣化的失配非连续性(mismatched discontinuities)。基于在光电倍增器阵列内的位置,不同的微单元之间可能具有不同的劣化(degradation),从而使得检测到的光子事件之间的定时分辨率不准确。
发明内容
在一方面,提供一种硅光电倍增器阵列。包括:多个微单元,多个微单元在硅光电倍增器阵列中并位于硅晶片上,多个微单元以行和列布置;多个微单元中的每一个包括输出端口,并配置成提供具有脉冲特征的脉冲波形;与硅晶片层背表面接触的至少一个重新图案化介电层,硅晶片具有与所述背表面相对的有源表面;以及多个相应硅通孔(TSV),多个相应硅通孔将硅晶片的有源表面上的所述多个微单元中的相应微单元的输出端口连接到设置在硅晶片的背表面上的所述至少一个重新图案化介电层上的多个相应电路线路。
优选地,硅光电倍增器阵列,包括构造为传输线的电路线路。
优选地,硅光电倍增器阵列,包括邻接至少一个重新图案化层的地平面层。
优选地,硅光电倍增器阵列中的介电层包括聚酰亚胺。
优选地,电路线路大体上包括铜、镍和金其中之一。
另一方面,提供一种制造硅光电倍增器阵列的方法,包括:在硅光电倍增器阵列中制造多个位于硅晶片上的微单元,多个微单元以行和列布置;在硅晶片的背表面上形成至少一个重新图案化介电层,所述背表面与所述硅晶片的有源表面相对;以及产生多个相应硅通孔(TSV),多个相应硅通孔(TSV)将所述多个微单元中的相应微单元的所述输出端口连接到所述至少一个重新图案化介电层上的多个相应电路线路。
优选地,制造硅光电倍增器阵列的方法还包括应用重新图案化技术以产生所述介电表面。
优选地,优选地制造硅光电倍增器阵列的方法中重新图案化技术还包括应用液体聚酰亚胺。
优选地,制造硅光电倍增器阵列的方法还包括执行光刻图案化工艺和干法蚀刻工艺其中之一以制造所述TSV。
优选地,制造硅光电倍增器阵列的方法中多个相应电路线路中的每一个具有在约小于1微米到约大于10微米的范围内的厚度。
优选地,制造硅光电倍增器阵列的方法还包括通过蒸发沉积工艺和光刻工艺其中之一形成所述多个电路线路。
附图说明
图1示出了常规硅光电倍增器像素和阈值检测器电路;
图2示出了根据实施例的微单元阵列的配置;以及
图3示出了根据实施例的硅光电倍增器的侧视图。
具体实施方式
除了其上形成有微单元的半导体晶片之外,实施例的器件和方法还提供一个或多个附加层。根据实施例,这些附加层由介电常数比硅半导体晶片低的材料形成。此外,附加层可以包括由铜传输线形成的电路线路,铜传输线为来自各个微单元的输出脉冲提供较低的阻抗。
图1示出了包括常规硅光电倍增器像素的电路100,其中微单元是单元的SiPM阵列内的多个微单元88、86中的一个。在一个示例中,示出的微单元可以是在模拟SiPM中以Geiger模式操作的单光子雪崩二极管(SPAD)阵列的一部分。在示出的示例中,模型具有相关联的阴极52和阳极54。模型的微单元部分包括二极管电容58和电流源66,例如可以与光电二极管相关联。示出的示例中的猝灭电路(quench circuitry)包括猝灭电阻72和寄生猝灭电容60。该示例中猝灭电路的下游,电路线路阻抗90建模为寄生电阻62和寄生电感64。
在该模型中,例如所示的微单元这样的像素的每个单独的APD,通过猝灭电路连接到读出网络,包括典型值介于大约100kΩ到大约1MΩ之间的猝灭电阻(Rq)72。当检测到的光子生成雪崩事件时,产生电流脉冲74,所述微电子二极管电容(Cd)58放电到击穿电压,再充电电流产生可测量的输出信号。单个光电子(SPE)信号的阳极54处的典型脉冲形状92具有快速上升时间(即,急剧上升沿),随后是较长的下降时间(即,缓慢下降尾部)。
SiPM像素可以包括布置成矩阵的多个微单元,其中一些微单元更接近像素的输出端口,而另一些微单元更远离输出端口。存在于像素的输出端口处的脉冲形状的失真/劣化可由来自阵列的不同组成微单元的信号的线路路径中的不连续性和/或阻抗不匹配引起。不连续性和/或阻抗不匹配可能是由以下项造成的:电路线路中的结,其中每个微单元的输出端口连接到电路线路;半导体晶片上的互连电路线路中的线宽变化导致传输线阻抗变化;电路线路阻抗与像素输出端口和/或输出端口连接到的器件之间的不匹配。
SiPM像素阵列的单个微单元的几何位置提供了每个脉冲在其微单元和阵列输出之间传播的各种电路线路路径长度。随着阵列变大(例如,大约4×4mm或更大),由于阻抗不匹配引起的反应,脉冲形状失真会变得更强,这导致被检测到的光子事件之间的定时分辨率降低。
图2示出了根据实施例的SiPM像素200中的微单元阵列的配置。微单元210被布置成列,其中相邻的微单元可以被求和到由电路通道线路220形成的读出线。读出线提供来自SiPM阵列的像素输出240。阵列200内的微单元位置的几何形状和位置对来自每个微单元的信号引入不同的线路通道长度(具有相应的不连续性和/或阻抗不匹配)。像素输出240读出线可以连接到加法器(未示出)。从相应读出线到加法器输入的通道长度引入对于每一条读出线可能不同的另一级别的通道长度。在常规SiPM像素中,通道长度和电路线路通道上的这些差异会造成每个微单元所见的电路线路阻抗的变化,由于微单元所见的负载阻抗不同,电路线路阻抗不仅影响输出信号传输,而且影响脉冲形状特征。
根据实施例,来自每个微单元210的输出信号连接到位于相应微单元210输出处的相应硅通孔(TSV)230。硅通孔蚀刻穿过硅晶片的主体,并且提供从晶片的有源表面(activesurface)到晶片的背表面的连接。TVS将来自其上形成有微单元的半导体基板的有源表面的微单元输出信号连接到晶片的背表面。根据实施例,电路通道线路220形成在第二表面上,其中有充足的空间以产生低阻抗线路。
图3示出了根据实施例的SiPM阵列300的侧视图。SiPM阵列300包括半导体晶片310和印制电路板(PCB)320,其可以包括接地平面层。半导体晶片310包括第一(有源)表面312以及与第一表面相对定位的第二(背)表面314。有源半导体晶片表面具有暴露于撞击光子的器件(即,微单元)。在一些实施方式中,印制电路板(PCB)320可以是金属包覆印制电路板(MCPCB)。
SiPM阵列300还包括电路线路220所在的一个或多个介电(重新图案化)层330。PCB320可以通过第二有机介电层340中的开口350与电路线路220接合。半导体晶片310上的微单元的相应输出通过相应的TSV230连接到介电层330上的相应电路线路220。
介电层330上的布线层(routing layer)(即,电路线路220)可以通过应用晶粒重新图案化(die repatterning)技术来形成。在一些实施方式中,介电层可以包括聚合体(例如,聚酰亚胺),聚合体以液体形式施加在半导体晶片上。然后,可以高转速旋转晶片以实现介电层的均匀厚度,随后固化。TSV可以使用光刻图案化和干法刻蚀工艺形成。布线层本身可以通过蒸发沉积和光刻形成在固化的介电层上。
实施例的SiPM和/或PET检测器具有优于使用常规硅晶片制造工艺形成的常规SiPM和/或PET检测器的几个优点。聚酰亚胺具有比常规氧化硅(SiO 2)低的介电常数,例如,前者约3.0-3.2,而后者为3.8。此外,聚酰亚胺可以沉积在比可用于SiO2沉积的明显更厚、更低应力的膜上。
介电层330上的电路线路220的导电材料可以由铜(Cu)、镍(Ni)和/或金(Au)形成。介电层330上的铜电路线路的厚度可以在大约小于1微米到大约大于10微米的范围内。相比之下,常规晶片制造工艺提供小于1微米厚的线路。实施例的电路线路220的厚度可能取决于布局复杂度和所提供的布线通道的数量,数据可能取决于底层SiPM像素的M×N矩阵尺寸。此外,铝具有比Cu(1.67μΩ·cm)高约60%的电阻率(2.65μΩ·cm)。
根据实施例,使用重新图案化的材料和工艺形成的电路线路220传输线改善了来自微单元的脉冲输出波形的信号特征。这种改进归功于实施例的电路线路220的在常规SiPM像素中不可用的较低电阻率,以及在常规SiPM像素中也不可用的较低电容项(来自介电层330的较低介电常数)。
常规SiPM设备可以在SPAD的平面之上提供电路线路布线。这种布线必须考虑电路线路本身可以阻挡光子到达有源硅表面。因此,这些电路线路较窄,并且在晶片的有源表面上围绕有源器件的周边布线。不能针对信号质量优化线路的长度和宽度。重新图案化通常实现为重新配置区域阵列的I/O线周边环。这些器件和I/O线通常对布线寄生效应不敏感。
用于优化SiPM电路的常规方法受到设备制造中使用的材料和工艺的限制。介电层通常是二氧化硅(SiO2)或氮化硅(SiN),并且由于机械应力而具有有限的厚度。由于铜会对硅造成污染的已知问题,铜电路很少沉积在硅晶片上。
实施例的设备包括TSV,以及在硅层的背表面(即,与其有源前表面相对的硅层表面)上的一个或多个重新图案化层。因此,实施例的SiPM的整个表面积可用于布线电路线路和优化通道阻抗。此外,替换材料也可以用于最小化寄生效应。实施例的器件实现重新图案化以解决布线寄生效应造成常规SiPM设备中的信号劣化问题。
尽管本说明书中描述了特定硬件和方法,但是可以根据本发明的实施例提供任意数量的其他构造。因此,尽管本说明书中已图示、描述并指出本发明的基本新颖特征,但是应了解,所属领域中的技术人员能够在不脱离本发明精神和范围的情况下对图示实施例的形式和细节以及这些实施例的操作做出各种省略、替代和改变。此外还充分计划和考虑到了不同实施例之间的元素更替。本发明仅相对于随附的权利要求书以及其中引述内容的等效物来定义。
Claims (11)
1.一种硅光电倍增器阵列,包括:
多个微单元,所述多个微单元在所述硅光电倍增器阵列中并位于硅晶片上,所述多个微单元以行和列布置;
所述多个微单元中的每一个包括输出端口,并配置成提供具有脉冲特征的脉冲波形;
与硅晶片层背表面接触的至少一个重新图案化介电层,所述硅晶片具有与所述背表面相对的有源表面;以及
多个相应硅通孔(TSV),所述多个相应硅通孔将所述硅晶片的有源表面上的所述多个微单元中的相应微单元的输出端口连接到设置在所述硅晶片的背表面上的所述至少一个重新图案化介电层上的多个相应电路线路。
2.根据权利要求1所述的硅光电倍增器阵列,包括构造为传输线的所述电路线路。
3.根据权利要求1所述的硅光电倍增器阵列,包括邻接所述至少一个重新图案化层的地平面层。
4.根据权利要求1所述的硅光电倍增器阵列,所述介电层包括聚酰亚胺。
5.根据权利要求1所述的硅光电倍增器阵列,所述电路线路大体上包括铜、镍和金其中之一。
6.一种制造硅光电倍增器阵列的方法,所述方法包括:
在所述硅光电倍增器阵列中制造多个位于硅晶片上的微单元,所述多个微单元以行和列布置;
在所述硅晶片的背表面上形成至少一个重新图案化介电层,所述背表面与所述硅晶片的有源表面相对;以及
产生多个相应硅通孔(TSV),所述多个相应硅通孔(TSV)将所述多个微单元中的相应微单元的所述输出端口连接到所述至少一个重新图案化介电层上的多个相应电路线路。
7.根据权利要求6所述的方法,包括应用重新图案化技术以产生所述介电表面。
8.根据权利要求7所述的方法,所述重新图案化技术包括应用液体聚酰亚胺。
9.根据权利要求6所述的方法,包括执行光刻图案化工艺和干法蚀刻工艺其中之一以制造所述TSV。
10.根据权利要求6所述的方法,所述多个相应电路线路中的每一个具有在约小于1微米到约大于10微米的范围内的厚度。
11.根据权利要求6所述的方法,包括通过蒸发沉积工艺和光刻工艺其中之一形成所述多个电路线路。
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Publication number | Priority date | Publication date | Assignee | Title |
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CN109738792A (zh) * | 2018-12-16 | 2019-05-10 | 深圳先进技术研究院 | SiPM阵列的信号读出方法、装置及SiPM阵列模块 |
CN117199155A (zh) * | 2023-11-06 | 2023-12-08 | 杭州特洛伊光电技术有限公司 | 一种波导型可见光及近红外光探测器结构与制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103890971A (zh) * | 2011-10-21 | 2014-06-25 | 浜松光子学株式会社 | 光检测装置 |
CN104459757A (zh) * | 2013-09-20 | 2015-03-25 | 株式会社东芝 | 放射检测器和放射检测装置 |
CN104779259A (zh) * | 2014-01-15 | 2015-07-15 | 全视科技有限公司 | 用于互补金属氧化物半导体堆叠式芯片应用的单光子雪崩二极管成像传感器 |
Family Cites Families (2)
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US7659519B1 (en) * | 2008-06-04 | 2010-02-09 | Kotura, Inc. | System having reduced distance between scintillator and light sensor array |
-
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Publication number | Priority date | Publication date | Assignee | Title |
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CN104459757A (zh) * | 2013-09-20 | 2015-03-25 | 株式会社东芝 | 放射检测器和放射检测装置 |
CN104779259A (zh) * | 2014-01-15 | 2015-07-15 | 全视科技有限公司 | 用于互补金属氧化物半导体堆叠式芯片应用的单光子雪崩二极管成像传感器 |
Cited By (4)
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---|---|---|---|---|
CN109738792A (zh) * | 2018-12-16 | 2019-05-10 | 深圳先进技术研究院 | SiPM阵列的信号读出方法、装置及SiPM阵列模块 |
CN109738792B (zh) * | 2018-12-16 | 2020-06-12 | 深圳先进技术研究院 | SiPM阵列的信号读出方法、装置及SiPM阵列模块 |
CN117199155A (zh) * | 2023-11-06 | 2023-12-08 | 杭州特洛伊光电技术有限公司 | 一种波导型可见光及近红外光探测器结构与制备方法 |
CN117199155B (zh) * | 2023-11-06 | 2024-02-13 | 杭州特洛伊光电技术有限公司 | 一种波导型可见光及近红外光探测器结构与制备方法 |
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