CN1073909C - 适于高精度平面化的化学机械抛光方法 - Google Patents
适于高精度平面化的化学机械抛光方法 Download PDFInfo
- Publication number
- CN1073909C CN1073909C CN98120209A CN98120209A CN1073909C CN 1073909 C CN1073909 C CN 1073909C CN 98120209 A CN98120209 A CN 98120209A CN 98120209 A CN98120209 A CN 98120209A CN 1073909 C CN1073909 C CN 1073909C
- Authority
- CN
- China
- Prior art keywords
- polishing
- backing plate
- layer
- cmp method
- interconnection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- 239000002184 metal Substances 0.000 claims description 51
- 229920002635 polyurethane Polymers 0.000 claims description 49
- 239000004814 polyurethane Substances 0.000 claims description 49
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 34
- 239000000377 silicon dioxide Substances 0.000 claims description 16
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 2
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- 230000008021 deposition Effects 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 216
- 239000012212 insulator Substances 0.000 description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 229910052710 silicon Inorganic materials 0.000 description 20
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- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- 239000002002 slurry Substances 0.000 description 2
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Chemical compound [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 150000003673 urethanes Chemical class 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- KXDHJXZQYSOELW-UHFFFAOYSA-M Carbamate Chemical compound NC([O-])=O KXDHJXZQYSOELW-UHFFFAOYSA-M 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000009954 braiding Methods 0.000 description 1
- HRYZWHHZPQKTII-UHFFFAOYSA-N chloroethane Chemical compound CCCl HRYZWHHZPQKTII-UHFFFAOYSA-N 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
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- 238000005259 measurement Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- -1 polysiloxanes Polymers 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
- 235000019394 potassium persulphate Nutrition 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (28)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP265580/97 | 1997-09-30 | ||
JP9265580A JPH11111656A (ja) | 1997-09-30 | 1997-09-30 | 半導体装置の製造方法 |
JP265580/1997 | 1997-09-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1212919A CN1212919A (zh) | 1999-04-07 |
CN1073909C true CN1073909C (zh) | 2001-10-31 |
Family
ID=17419105
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN98120209A Expired - Lifetime CN1073909C (zh) | 1997-09-30 | 1998-09-30 | 适于高精度平面化的化学机械抛光方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6132292A (zh) |
JP (1) | JPH11111656A (zh) |
CN (1) | CN1073909C (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100500377C (zh) * | 2006-04-03 | 2009-06-17 | 深圳南玻显示器件科技有限公司 | 透明导电膜层抛光装置及其抛光方法 |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MY125115A (en) * | 1999-03-31 | 2006-07-31 | Hoya Corp | Substrate for an information recording medium, information recording medium using the substrate and method of producing the substrate |
JP3439402B2 (ja) * | 1999-11-05 | 2003-08-25 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
EP1212171A1 (en) * | 1999-12-23 | 2002-06-12 | Rodel Holdings, Inc. | Self-leveling pads and methods relating thereto |
US7059948B2 (en) * | 2000-12-22 | 2006-06-13 | Applied Materials | Articles for polishing semiconductor substrates |
US7670468B2 (en) | 2000-02-17 | 2010-03-02 | Applied Materials, Inc. | Contact assembly and method for electrochemical mechanical processing |
US7678245B2 (en) | 2000-02-17 | 2010-03-16 | Applied Materials, Inc. | Method and apparatus for electrochemical mechanical processing |
US6848970B2 (en) | 2002-09-16 | 2005-02-01 | Applied Materials, Inc. | Process control in electrochemically assisted planarization |
KR100394572B1 (ko) * | 2000-12-28 | 2003-08-14 | 삼성전자주식회사 | 복합특성을 가지는 씨엠피 패드구조와 그 제조방법 |
US6811470B2 (en) | 2001-07-16 | 2004-11-02 | Applied Materials Inc. | Methods and compositions for chemical mechanical polishing shallow trench isolation substrates |
US20030224678A1 (en) * | 2002-05-31 | 2003-12-04 | Applied Materials, Inc. | Web pad design for chemical mechanical polishing |
US7063597B2 (en) | 2002-10-25 | 2006-06-20 | Applied Materials | Polishing processes for shallow trench isolation substrates |
JP2004186493A (ja) * | 2002-12-04 | 2004-07-02 | Matsushita Electric Ind Co Ltd | 化学的機械研磨方法及び化学的機械研磨装置 |
US20060088976A1 (en) * | 2004-10-22 | 2006-04-27 | Applied Materials, Inc. | Methods and compositions for chemical mechanical polishing substrates |
CN100582314C (zh) * | 2007-09-10 | 2010-01-20 | 厦门致力金刚石工具有限公司 | 抛镀机 |
US20110086586A1 (en) * | 2009-10-13 | 2011-04-14 | Andrews Edward A | Industrial finishing files |
CN102402635B (zh) * | 2010-09-19 | 2014-03-05 | 复旦大学 | 一种针对耦合电容影响的化学机械抛光工艺哑元金属填充方法 |
CN102480018B (zh) * | 2011-06-01 | 2013-07-03 | 深圳光启高等理工研究院 | 一种超材料的制备方法和超材料 |
JP6301003B2 (ja) * | 2014-07-08 | 2018-03-28 | エーシーエム リサーチ (シャンハイ) インコーポレーテッド | 金属配線形成方法 |
CN107210209B (zh) * | 2015-02-15 | 2020-05-19 | 盛美半导体设备(上海)股份有限公司 | 优化金属平坦化工艺的方法 |
TWI769988B (zh) | 2015-10-07 | 2022-07-11 | 美商3M新設資產公司 | 拋光墊與系統及其製造與使用方法 |
CN110328598A (zh) * | 2019-07-05 | 2019-10-15 | 拓米(成都)应用技术研究院有限公司 | 一种玻璃用抛光毛刷 |
CN112935994B (zh) * | 2021-01-29 | 2023-08-01 | 中国建筑材料科学研究总院有限公司 | 异型表面抛光装置及抛光方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3397501B2 (ja) * | 1994-07-12 | 2003-04-14 | 株式会社東芝 | 研磨剤および研磨方法 |
JPH09174430A (ja) * | 1995-12-27 | 1997-07-08 | Komatsu Electron Metals Co Ltd | 半導体ウェハの研磨装置 |
JPH09225827A (ja) * | 1996-02-20 | 1997-09-02 | Asahi Daiyamondo Kogyo Kk | ドレッサ及びその製造方法 |
US5976000A (en) * | 1996-05-28 | 1999-11-02 | Micron Technology, Inc. | Polishing pad with incompressible, highly soluble particles for chemical-mechanical planarization of semiconductor wafers |
JPH10166262A (ja) * | 1996-12-10 | 1998-06-23 | Nikon Corp | 研磨装置 |
US5944583A (en) * | 1997-03-17 | 1999-08-31 | International Business Machines Corporation | Composite polish pad for CMP |
US5916016A (en) * | 1997-10-23 | 1999-06-29 | Vlsi Technology, Inc. | Methods and apparatus for polishing wafers |
-
1997
- 1997-09-30 JP JP9265580A patent/JPH11111656A/ja active Pending
-
1998
- 1998-09-28 US US09/161,218 patent/US6132292A/en not_active Expired - Lifetime
- 1998-09-30 CN CN98120209A patent/CN1073909C/zh not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100500377C (zh) * | 2006-04-03 | 2009-06-17 | 深圳南玻显示器件科技有限公司 | 透明导电膜层抛光装置及其抛光方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH11111656A (ja) | 1999-04-23 |
US6132292A (en) | 2000-10-17 |
CN1212919A (zh) | 1999-04-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: NEC ELECTRONICS TAIWAN LTD. Free format text: FORMER OWNER: NIPPON ELECTRIC CO., LTD. Effective date: 20030523 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20030523 Address after: Kanagawa, Japan Patentee after: NEC Corp. Address before: Tokyo, Japan Patentee before: NEC Corp. |
|
C56 | Change in the name or address of the patentee |
Owner name: RENESAS ELECTRONICS CORPORATION Free format text: FORMER NAME: NEC CORP. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: NEC Corp. |
|
CP02 | Change in the address of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: Tokyo, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: Renesas Electronics Corporation |
|
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20011031 |