CN107390444B - 一种阵列基板及其制作方法和显示装置 - Google Patents

一种阵列基板及其制作方法和显示装置 Download PDF

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Publication number
CN107390444B
CN107390444B CN201710795480.9A CN201710795480A CN107390444B CN 107390444 B CN107390444 B CN 107390444B CN 201710795480 A CN201710795480 A CN 201710795480A CN 107390444 B CN107390444 B CN 107390444B
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layer
pattern
diffuse reflection
array substrate
metal film
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CN107390444A (zh
Inventor
姚磊
史大为
王文涛
杨璐
徐海峰
闫雷
王金锋
司晓文
闫芳
薛进进
候林
李元博
郭志轩
李晓芳
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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Priority to CN201710795480.9A priority Critical patent/CN107390444B/zh
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Priority to US16/121,968 priority patent/US10795228B2/en
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Abstract

本发明提供一种阵列基板及其制作方法和显示装置。该阵列基板包括：包括衬底基板，以及设置于所述衬底基板上的栅线和数据线，所述栅线和数据线限定出多个像素区域，所述像素区域中设置有漫反射层，所述漫反射层的朝向所述阵列基板的出光侧的表面凹凸不平。本发明中，设置在阵列基板的像素区域中的漫反射层能够对外界光进行漫反射，从而能够提高具有该阵列基板的显示装置在户外环境下的亮度，改善在户外环境下的显示效果。此外，由于借助外界光提高显示装置的亮度，因而不会增加显示装置的能耗。

Description

一种阵列基板及其制作方法和显示装置
技术领域
本发明涉及显示技术领域，尤其涉及一种阵列基板及其制作方法和显示装置。
背景技术
现有的薄膜晶体管液晶显示装置(TFT-LCD)，尤其是便携式显示装置，在户外光照强烈的情况下其显示存在一定的局限性。因外界光线较强，户外的光照强度往往高于室内，导致显示的内容难以分辨。通常情况下，为了改善此时的显示效果，需提高背光亮度以维持正常的内容显示，但这样不仅会加速电池电量的消耗，缩短显示装置的待机时长，而且会对眼睛造成额外的伤害。
发明内容
有鉴于此，本发明提供一种阵列基板及其制作方法和显示装置，能够提高显示装置在户外的显示效果，且不会增加显示装置的能耗。
为解决上述技术问题，本发明提供一种阵列基板，包括衬底基板，以及设置于所述衬底基板上的栅线和数据线，所述栅线和数据线限定出多个像素区域，所述像素区域中设置有漫反射层，所述漫反射层的朝向所述阵列基板的出光侧的表面凹凸不平。
优选地，所述陈列基板还包括：用于为所述阵列基板的薄膜晶体管遮挡背光的遮光层，所述漫反射层与所述遮光层同层同材料设置。
优选地，所述漫反射层在所述衬底基板上的正投影与对应的像素区域在所述衬底基板上的正投影至少部分重叠。
优选地，所述阵列基板还包括：设置于所述衬底基板上的绝缘层，所述绝缘层设置在所述漫反射层的靠近所述衬底基板的一侧，所述绝缘层的朝向所述漫反射层的一侧的表面凹凸不平。
优选地，所述漫反射层采用的材料包括Ag、Au、Mo、Al和Cu中的至少一种。
优选地，所述漫反射层包括板状结构、条状结构和矩阵排列的块状结构中的至少一种。
本发明还提供一种阵列基板的制作方法，用于上述阵列基板，所述制作方法包括：
形成位于像素区域内的漫反射层，所述漫反射层的朝向所述阵列基板的出光侧的表面凹凸不平。
优选地，所述形成位于像素区域内的漫反射层的步骤包括：
形成金属膜层；
在所述金属膜层上形成光刻胶层；
对所述光刻胶层进行曝光和显影，形成光刻胶层图形，所述光刻胶层图形至少包括第一图形，所述第一图形与用于设置所述漫反射层的区域对应；
去除未被所述光刻胶层图形覆盖的金属膜层，形成金属膜层图形；
采用等离子工艺对所述光刻胶层图形进行轰击，使得所述光刻胶层图形被灰化，并继续对所述金属膜层图形进行轰击，使得所述金属膜层图形的表面凹凸不平，所述金属膜层图形包括漫反射层的图形；
剥离剩余的光刻胶。
优选地，所述形成位于像素区域内的漫反射层的步骤之前还包括：
形成绝缘层；
采用等离子工艺对所述绝缘层进行轰击，形成表面凹凸不平的绝缘层；
其中，所述形成位于像素区域内的漫反射层的步骤包括：
形成金属膜层；
在所述金属膜层上形成光刻胶层；
对所述光刻胶层进行曝光和显影，形成光刻胶层图形，所述光刻胶层图形至少包括第一图形，所述第一图形与用于设置所述漫反射层的区域对应；
去除未被所述光刻胶层图形覆盖的金属膜层，形成表面凹凸不平的金属膜层的图形，所述金属膜层的图形包括漫反射层的图形；
剥离剩余的光刻胶。
优选地，所述光刻胶层图形还包括第二图形，所述第二图形与用于设置为所述阵列基板的薄膜晶体管遮挡背光的遮光层的区域对应，形成的金属膜层图形还包括遮光层的图形。
本发明还提供一种显示装置，包括上述阵列基板。
本发明的上述技术方案的有益效果如下：
由于在阵列基板的像素区域设置表面凹凸不平的漫反射层，能够对外界光进行漫反射，从而能够提高具有该阵列基板的显示装置在户外环境下的亮度，改善在户外环境下的显示效果。此外，由于借助外界光提高显示装置的亮度，因而不会增加显示装置的能耗。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对本发明实施例的描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施例一的阵列基板的俯视示意图；
图2为本发明实施例二的阵列基板的俯视示意图；
图3为本发明实施例三的阵列基板的俯视示意图；
图4为本发明实施例四的阵列基板的俯视示意图；
图5为本发明实施例五的阵列基板的剖面示意图；
图6为本发明实施例五的阵列基板的俯视示意图；
图7为本发明实施例六的阵列基板的剖面示意图；
图8为本发明实施例七的阵列基板的制作方法示意图；
图9为本发明实施例八的阵列基板的制作方法示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员所获得的所有其他实施例，都属于本发明保护的范围。
本发明实施例提供一种阵列基板，包括衬底基板，以及设置于所述衬底基板上的栅线和数据线，所述栅线和数据线限定出多个像素区域，所述像素区域中设置有漫反射层，所述漫反射层的朝向所述阵列基板的出光侧的表面凹凸不平。
本发明实施例中，由于在阵列基板的像素区域设置表面凹凸不平的漫反射层，能够对外界光进行漫反射，从而能够提高具有该阵列基板的显示装置在户外环境下的亮度，改善在户外环境下的显示效果。此外，由于借助外界光提高显示装置的亮度，因而不会增加显示装置的能耗。
本发明实施例中的漫反射层可以采用反射系数较高的金属材料制成，例如所述漫反射层采用的材料可以包括Ag、Au、Mo、Al和Cu中的至少一种，当然，也不排除采用其他材料制成。
本发明实施例中的阵列基板可以是用于液晶显示装置的阵列基板，也可以是用于有机电致发光二极管(OLED)显示装置的阵列基板。
当本发明实施例中的阵列基板是用于液晶显示装置的阵列基板时，由于像素区域需要透过背光，因而，所述漫反射层在所述衬底基板上的正投影与对应的像素区域在所述衬底基板上的正投影部分重叠，即在像素区域内，所述漫反射层仅能够占据对应的像素区域的部分区域，不能够占据对应的像素区域的全部区域，以使得背光可以透过。
请参考图1，图1为本发明实施例一的阵列基板的俯视示意图，本发明实施例中，阵列基板包括衬底基板(图未示出)以及设置于衬底基板上的栅线171和数据线191，栅线171和数据线191限定出多个像素区域，所述像素区域中设置有漫反射层131，所述漫反射层131的朝向所述阵列基板的出光侧的表面凹凸不平。本发明实施例中，所述漫反射层131呈整块板状结构，所述漫反射层131在衬底基板上的正投影与对应的像素区域在衬底基板上的正投影部分重叠，即漫反射层131仅占据像素区域的部分区域。从而，当本发明实施例中的阵列基板是用于液晶显示装置的阵列基板时，背光可以通过漫反射层131与栅线171和数据线191之间的缝隙透过。本发明实施例中的漫反射层131为矩形板状结构，当然，在本发明的其他一些实施例中，漫反射层也可以是正方形或圆形等板状结构。
当然，漫反射层也可以为其他类型的设置方法。
请参考图2，图2为本发明实施例二的阵列基板的俯视示意图，本发明实施例中，阵列基板包括衬底基板(图未示出)以及设置于衬底基板上的栅线171和数据线191，栅线171和数据线191限定出多个像素区域，所述像素区域中设置有漫反射层131，所述漫反射层131的朝向所述阵列基板的出光侧的表面凹凸不平。本发明实施例中，所述漫反射层131呈条状结构，包括多条平行的条状图形，所述漫反射层131在衬底基板上的正投影与对应的像素区域在衬底基板上的正投影部分重叠，即，漫反射层131仅占据像素区域的部分区域。从而，当本发明实施例中的阵列基板是用于液晶显示装置的阵列基板时，背光可以通过条状图形与栅线171和数据线191之间的缝隙以及条状图形之间的缝隙透过。本发明实施例中，一个像素区域中的漫反射层131包括七个平行设置的条状图形，当然，条状图形的数量并不以此为限。另外，各个条状图形除了是平行设置之外，也可以是其他设置方式，例如纵横交叉的网状结构等。
请参考图3，图3为本发明实施例三的阵列基板的俯视示意图，本发明实施例中，阵列基板包括衬底基板(图未示出)以及设置于衬底基板上的栅线171和数据线191，栅线171和数据线191限定出多个像素区域，所述像素区域中设置有漫反射层131，所述漫反射层131的朝向所述阵列基板的出光侧的表面凹凸不平。本发明实施例中，所述漫反射层131呈矩阵排列的块状结构，包括多个块状图形，所述漫反射层131在衬底基板上的正投影与对应的像素区域在衬底基板上的正投影部分重叠，即，漫反射层131仅占据像素区域的部分区域。从而，当本发明实施例中的阵列基板是用于液晶显示装置的阵列基板时，背光可以通过块状图形与栅线171和数据线191之间的缝隙以及块状图形之间的缝隙透过。本发明实施例中的一个像素区域中的漫反射层131呈六行四列的矩阵结构，当然，矩阵结构的行列个数并不限于此，也可以为其他数值。
另外，漫反射层的结构并不限于上述方式，其实际形状及其大小可根据显示装置对开口率的设计要求进行调整。
当本发明实施例中的阵列基板是用于OLED的阵列基板时，由于像素区域不需要透过背光，因而，所述漫反射层131在衬底基板上的正投影能够与对应的像素区域在衬底基板上的正投影完全重叠，即，漫反射层131能够占据对应的像素区域的全部区域，请参考图4，当然，所述漫反射层也可以是仅占据对应的像素区域的部分区域，请参考图1、图2和图3，也就是说，图1、图2和图3中的漫反射层即可以应用于液晶类型的阵列基板，也可以应用于OLED类型的阵列基板。
当本发明实施例中的阵列基板是用于液晶显示装置的阵列基板时，为了避免阵列基板上的薄膜晶体管的沟道区域被背光照射，影响薄膜晶体管的性能，通常情况下，需要为薄膜晶体管与阵列基板的衬底基板之间设置遮光层，用于为薄膜晶体管遮挡背光。本发明实施例中，优选地，所述漫反射层可以与遮挡层同层同材料设置，从而漫反射层和遮挡层可以通过一次构图工艺形成，节省掩膜(mask)数量，降低生产成本。同时，还可以降低阵列基板的厚度。
请参考图5和图6，图5为本发明实施例五的阵列基板的剖面示意图，图6为本发明实施例五的阵列基板的俯视示意图，该阵列基板包括：衬底基板11、金属膜层图形、缓冲层14、有源层15、栅金属层，栅电极172，层间介质层18，源漏金属层，平坦层20，公共电极层21，钝化层22和像素电极层23。其中，栅金属层包括栅线161和栅电极162，源漏金属层包括数据线191、源电极192和漏电极193。有源层15、栅电极162、源电极192和漏电极193等组成薄膜晶体管，所述金属膜层图形包括：漫反射层131和遮光层132，遮光层132遮挡薄膜晶体管的沟道区域(即栅电极162与有源层15重叠的区域)。漫反射层131与遮光层132同层同材料设置，可以通过一次构图工艺形成，从而节省mask数量，降低生产成本。
本发明实施例，有源层15可以为低温多晶硅(LTPS)有源层。
本发明实施例中的阵列基板，在使用背光源的基础上，漫反射层能够通过反射外界光实现光的补给，提高具有该阵列基板的显示装置的亮度，改善在外界环境下的显示效果。
请参考图7，图7为本发明实施例六的阵列基板的剖面示意图，该阵列基板与图5所示的阵列基板的区别在于：还包括：绝缘层12，所述绝缘层12设置在所述金属膜层图形的靠近所述衬底基板的一侧，所述绝缘层12的朝向所述金属膜层图形的表面凹凸不平，从而使得形成在其上的金属膜层图形的表面凹凸不平。
本发明实施例还提供一种显示装置，包括上述任一实施例中的阵列基板。所述显示装置可以是包括阵列基板的显示面板，也可以是包括显示面板和驱动电路的显示器件。
基于同一发明构思，本发明实施例还提供一种阵列基板的制作方法，用于制作上述任一实施例所述的阵列基板，所述制作方法包括：形成位于像素区域内的漫反射层，所述漫反射层的朝向所述阵列基板的出光侧的表面凹凸不平。
采用上述方法形成的阵列基板，像素区域设置表面凹凸不平的漫反射层，能够对外界光进行漫反射，从而能够提高具有该阵列基板的显示装置在户外环境下的亮度，改善在户外环境下的显示效果。此外，由于借助外界光提高显示装置的亮度，因而不会增加显示装置的能耗。
本发明实施例中的漫反射层可以采用反射系数较高的金属材料制成，例如所述漫反射层采用的材料可以包括Ag、Au、Mo、Al和Cu中的至少一种，当然，也不排除采用其他材料制成。
本发明实施例中的阵列基板可以是用于液晶显示装置的阵列基板，也可以是用于有机电致发光二极管显示装置的阵列基板。
当本发明实施例中的阵列基板是用于液晶显示装置的阵列基板时，由于像素区域需要透过背光，因而，所述漫反射层在所述衬底基板上的正投影与对应的像素区域在所述衬底基板上的正投影部分重叠，即在像素区域内，所述漫反射层仅能够占据对应的像素区域的部分区域，不能够占据对应的像素区域的全部区域，以使得背光可以透过。
当本发明实施例中的阵列基板是用于OLED的阵列基板时，由于像素区域不需要透过背光，因而，所述漫反射层在衬底基板上的正投影能够与对应的像素区域在衬底基板上的正投影完全重叠，即，漫反射层能够占据对应的像素区域的全部区域。
当本发明实施例中的阵列基板是用于液晶显示装置的阵列基板时，为了避免阵列基板上的薄膜晶体管的沟道区域被背光照射，影响薄膜晶体管的性能，通常情况下，需要为薄膜晶体管与阵列基板的衬底基板之间设置遮光层，用于为薄膜晶体管遮挡背光。本发明实施例中，优选地，漫反射层和遮挡层可以通过一次构图工艺形成，以节省掩mask数量，降低生产成本。同时，还可以降低阵列基板的厚度。
在本发明的一些实施例中，所述形成位于像素区域内的漫反射层的步骤可以包括：
步骤101：形成金属膜层；
具体的，可以通过沉积(Dep)工艺形成金属膜层；
步骤102：在所述金属膜层上形成光刻胶层；
步骤103：采用一掩膜版，对所述光刻胶层进行曝光和显影，形成光刻胶层图形，所述光刻胶层图形至少包括第一图形，所述第一图形与用于设置所述漫反射层的区域对应；
当本发明实施例中的阵列基板是用于液晶显示装置的阵列基板，且漫反射层和阵列基板的遮挡层通过一次构图工艺形成时，所述光刻胶层图形还包括第二图形，所述第二图形与用于设置为薄膜晶体管遮挡背光的遮光层的区域对应。
也就是说，与现有的制作遮光层的掩膜版相比，本发明实施例中的掩膜版除了具有对应遮光层的图形之外，还包括对应漫反射层的图形。
步骤104：去除未被所述光刻胶层图形覆盖的金属膜层，形成金属膜层图形；
具体的，可以采用湿刻(WetEtch)工艺刻蚀未被所述光刻胶层图形覆盖的金属膜层。当金属膜层采用Ag时，可以使用成分为硝酸和磷酸的刻蚀液对金属Ag进行刻蚀。
步骤105：采用等离子(Descum)工艺对所述光刻胶层图形进行轰击，使得所述光刻胶层图形被灰化，并继续对所述金属膜层图形进行轰击，使得所述金属膜层图形的表面凹凸不平，所述金属膜层图形包括漫反射层的图形；
具体的，Descum工艺中，可以使用惰性气体(如He/Ar)对光刻胶层图形进行轰击，直至光刻胶基本灰化完毕，并继续对所述金属膜层图形进行轰击，使得所述金属膜层图形的表面凹凸不平。
步骤107：剥离剩余的光刻胶。
为了避免在轰击时，光刻胶存在残留，优选地，最后还需要对光刻胶执行一次剥离工序。
在本发明的另外一些实施例中，所述形成位于像素区域内的漫反射层的步骤可以包括：
步骤101’：形成金属膜层；
具体的，可以通过沉积工艺形成金属膜层；
步骤102’：采用等离子工艺对所述金属膜层进行物理轰击，形成表面凹凸不平的金属膜层；
具体的，等离子工艺中，可以使用惰性气体(如He/Ar)对金属膜层进行轰击，使得所述金属膜层图形的表面凹凸不平。
步骤103’：在表面凹凸不平的金属膜层上形成光刻胶层；
步骤104’：采用一掩膜版，对所述光刻胶层进行曝光和显影，形成光刻胶层图形，所述光刻胶层图形至少包括第一图形，所述第一图形与用于设置所述漫反射层的区域对应；
当本发明实施例中的阵列基板是用于液晶显示装置的阵列基板，且漫反射层和阵列基板的遮挡层通过一次构图工艺形成时，所述光刻胶层图形还包括第二图形，所述第二图形与用于设置为薄膜晶体管遮挡背光的遮光层的区域对应。
也就是说，与现有的制作遮光层的掩膜版相比，本发明实施例中的掩膜版除了具有对应遮光层的图形之外，还包括对应漫反射层的图形。
步骤105’：去除未被所述光刻胶层图形覆盖的金属膜层，形成金属膜层图形，所述金属膜层图形包括漫反射层的图形。
具体的，可以采用湿刻(WetEtch)工艺刻蚀未被所述光刻胶层图形覆盖的金属膜层。当金属膜层采用Ag时，可以使用成分为硝酸和磷酸的刻蚀液对金属Ag进行刻蚀。
步骤106’：剥离剩余的光刻胶。
为了避免在轰击时，光刻胶存在残留，优选地，最后还需要对光刻胶执行一次剥离工序。
在本发明的另外一些实施例中，所述形成位于像素区域内的漫反射层的步骤可以包括：
步骤101”：形成金属膜层；
具体的，可以通过沉积工艺形成金属膜层；
步骤102”：在所述金属膜层上形成光刻胶层；
步骤103”：采用一掩膜版，对所述光刻胶层进行曝光和显影，形成光刻胶层图形，所述光刻胶层图形至少包括第一图形，所述第一图形与用于设置所述漫反射层的区域对应；
当本发明实施例中的阵列基板是用于液晶显示装置的阵列基板，且漫反射层和阵列基板的遮挡层通过一次构图工艺形成时，所述光刻胶层图形还包括第二图形，所述第二图形与用于设置为薄膜晶体管遮挡背光的遮光层的区域对应。
也就是说，与现有的制作遮光层的掩膜版相比，本发明实施例中的掩膜版除了具有对应遮光层的图形之外，还包括对应漫反射层的图形。
步骤104”：去除未被所述光刻胶层图形覆盖的金属膜层，形成金属膜层图形；
具体的，可以采用湿刻(WetEtch)工艺刻蚀未被所述光刻胶层图形覆盖的金属膜层。当金属膜层采用Ag时，可以使用成分为硝酸和磷酸的刻蚀液对金属Ag进行刻蚀。
步骤105”：剥离剩余的光刻胶；
步骤106”：采用等离子工艺对所述金属膜层图形进行轰击，使得所述金属膜层图形的表面凹凸不平，所述金属膜层图形包括漫反射层的图形；
具体的，等离子工艺中，可以使用惰性气体(如He/Ar)对光刻胶层图形进行轰击，直至光刻胶基本灰化完毕，并继续对所述金属膜层图形进行轰击，使得所述金属膜层图形的表面凹凸不平。
在本发明的另外一些实施例中，所述形成位于像素区域内的漫反射层的步骤可以包括：
步骤101”’：形成金属膜层；
具体的，可以通过沉积工艺形成金属膜层；
步骤102”’：在所述金属膜层上形成第一光刻胶层；
步骤103”’：采用等离子工艺对所述第一光刻胶层进行轰击，使得所述第一光刻胶被灰化，并继续对所述金属膜层进行轰击，使得所述金属膜层的表面凹凸不平；
具体的，等离子工艺中，可以使用惰性气体(如He/Ar)对第一光刻胶层进行轰击，直至光刻胶基本灰化完毕，并继续对所述金属膜层进行轰击，使得所述金属膜层的表面凹凸不平。
步骤104”’：在表面凹凸不平的金属膜层上形成第二光刻胶层；
步骤105”’：采用一掩膜版，对所述第二光刻胶层进行曝光和显影，形成光刻胶层图形，所述光刻胶层图形至少包括第一图形，所述第一图形与用于设置所述漫反射层的区域对应；
当本发明实施例中的阵列基板是用于液晶显示装置的阵列基板，且漫反射层和阵列基板的遮挡层通过一次构图工艺形成时，所述光刻胶层图形还包括第二图形，所述第二图形与用于设置为薄膜晶体管遮挡背光的遮光层的区域对应。
也就是说，与现有的制作遮光层的掩膜版相比，本发明实施例中的掩膜版除了具有对应遮光层的图形之外，还包括对应漫反射层的图形。
步骤106”’：去除未被所述光刻胶层图形覆盖的金属膜层，形成金属膜层图形，所述金属膜层图形包括漫反射层的图形；
具体的，可以采用湿刻(WetEtch)工艺刻蚀未被所述光刻胶层图形覆盖的金属膜层。当金属膜层采用Ag时，可以使用成分为硝酸和磷酸的刻蚀液对金属Ag进行刻蚀。
步骤107”’：剥离剩余的光刻胶。
在本发明的其他一些实施例中，所述形成位于像素区域内的漫反射层的步骤之前，还可以包括：
所述形成位于像素区域内的漫反射层的步骤之前还包括：
步骤201：形成绝缘层；
具体的，可以通过沉积工艺形成绝缘层；所述绝缘层可以采用SiNx或SiOx等材料制成；
步骤202：采用等离子工艺对所述绝缘层进行物理轰击，形成表面凹凸不平的绝缘层；
具体的，Descum工艺中，可以使用惰性气体(如He/Ar)对绝缘层进行物理轰击。
其中，所述形成位于像素区域内的漫反射层的步骤包括：
步骤203：形成金属膜层；
具体的，可以通过沉积工艺形成金属膜层；
步骤204：在所述金属膜层上形成光刻胶层；
步骤205：采用一掩膜版，对所述光刻胶层进行曝光和显影，形成光刻胶层图形，所述光刻胶层图形至少包括第一图形，所述第一图形与用于设置所述漫反射层的区域对应；
当本发明实施例中的阵列基板是用于液晶显示装置的阵列基板，且漫反射层和阵列基板的遮挡层通过一次构图工艺形成时，所述光刻胶层图形还包括第二图形，所述第二图形与用于设置为薄膜晶体管遮挡背光的遮光层的区域对应。
也就是说，与现有的制作遮光层的掩膜版相比，本发明实施例中的掩膜版除了具有对应遮光层的图形之外，还包括对应漫反射层的图形。
步骤206：去除未被所述光刻胶层图形覆盖的金属膜层，形成表面凹凸不平的金属膜层图形，所述金属膜层图形包括漫反射层的图形；
具体的，可以采用湿刻工艺刻蚀未被所述光刻胶层图形覆盖的金属膜层。当金属膜层采用Ag时，可以使用成分为硝酸和磷酸的刻蚀液对金属Ag进行刻蚀。
步骤207：剥离(Strip)所述光刻胶层图形。
本发明实施例中，先形成具有凹凸不平表面的绝缘层，然后在绝缘层上形成金属膜层，由于金属膜层的厚度较薄，因而自然也具有与绝缘层相对应的凹凸不平的粗糙表面。
请参考图8，图8为本发明实施例七的阵列基板的制作方法示意图，该阵列基板的制作方法包括：
步骤801：在衬底基板11上形成金属膜层和光刻胶层，并采用一掩膜版，对所述光刻胶层进行曝光和显影，形成光刻胶层图形80，所述光刻胶层图形80包括第一图形和第二图形，所述第一图形与用于设置漫反射层的区域对应，所述第二图形与用于设置为薄膜晶体管遮挡背光的遮光层的区域对应；去除未被所述光刻胶层图形80覆盖的金属膜层，形成金属膜层图形13；
具体的，可以通过沉积工艺形成金属膜层；并可以采用湿刻工艺刻蚀未被所述光刻胶层图形80覆盖的金属膜层。当金属膜层采用Ag时，可以使用成分为硝酸和磷酸的刻蚀液对金属Ag进行刻蚀。
步骤802：采用Descum工艺对所述光刻胶层图形80进行轰击，使得所述光刻胶层图形被灰化，并继续对金属膜层图形进行轰击，使得所述金属膜层图形13的表面凹凸不平；
具体的，Descum工艺中，可以使用惰性气体(如He/Ar)对光刻胶层图形80进行物理轰击，直至光刻胶基本灰化完毕，并继续对金属膜层图形进行轰击，使得所述金属膜层图形13的表面凹凸不平。
步骤803：剥离剩余的光刻胶。
步骤804：依次形成缓冲层14、有源层15、栅绝缘层16、栅金属层17、层间介质层18、源漏金属层19、平坦层20、公共电极层21、钝化层22和像素电极层23。
本发明实施例中，不增加Mask的基础上，仅对金属膜层的金属和工艺流程进行调整变更，而后续工艺不需进行改变。
请参考图9，图9为本发明实施例八的阵列基板的制作方法示意图，该阵列基板的制作方法包括：
步骤901：在衬底基板11上形成绝缘层12；
步骤902：采用等离子工艺对所述绝缘层12进行物理轰击，形成表面凹凸不平的绝缘层12；
步骤903：在所述绝缘层12上形成金属膜层图形13，所述金属膜层图形13包括漫反射层图形和遮光层图形，所述金属膜层图形的表面凹凸不平。
步骤903：形成缓冲层14、有源层15、栅绝缘层16、栅金属层17、层间介质层18、源漏金属层19、平坦层20、公共电极层21、钝化层22和像素电极层23。
本发明实施例中，不增加Mask的基础上，仅对金属膜层的金属和工艺流程进行调整变更，而后续工艺不需进行改变。
除非另作定义，本发明中使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本发明中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。同样，“一个”或者“一”等类似词语也不表示数量限制，而是表示存在至少一个。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也相应地改变。
以上所述是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明所述原理的前提下，还可以作出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (11)

1.一种阵列基板，包括衬底基板，以及设置于所述衬底基板上的栅线和数据线，所述栅线和数据线限定出多个像素区域，其特征在于，所述像素区域中设置有漫反射层，所述漫反射层的朝向所述阵列基板的出光侧的表面凹凸不平；
在所述多个像素区域中的每一区域中，所述漫反射层布置在除沟道区域所在区域之外的整个像素区域中；所述漫反射层与栅线之间存在用于通过从所述阵列基板入射的背光的间隙，和，所述漫反射层与数据线之间存在用于通过从所述阵列基板入射的背光的间隙；或者，背光从所述漫反射层之间的缝隙中通过。
2.根据权利要求1所述的阵列基板，其特征在于，还包括：用于为所述阵列基板的薄膜晶体管遮挡背光的遮光层，所述漫反射层与所述遮光层同层同材料设置。
3.根据权利要求1所述的阵列基板，其特征在于，所述漫反射层在所述衬底基板上的正投影与对应的像素区域在所述衬底基板上的正投影至少部分重叠。
4.根据权利要求1所述的阵列基板，其特征在于，还包括：设置于所述衬底基板上的绝缘层，所述绝缘层设置在所述漫反射层的靠近所述衬底基板的一侧，所述绝缘层的朝向所述漫反射层的一侧的表面凹凸不平。
5.根据权利要求1所述的阵列基板，其特征在于，所述漫反射层采用的材料包括Ag、Au、Mo、Al和Cu中的至少一种。
6.根据权利要求1所述的阵列基板，其特征在于，所述漫反射层包括板状结构、条状结构和矩阵排列的块状结构中的至少一种。
7.一种阵列基板的制作方法，其特征在于，用于制作如权利要求1-6任一项所述的阵列基板，所述制作方法包括：
形成位于像素区域内的漫反射层，所述漫反射层的朝向所述阵列基板的出光侧的表面凹凸不平。
8.根据权利要求7所述的阵列基板的制作方法，其特征在于，所述形成位于像素区域内的漫反射层的步骤包括：
形成金属膜层；
在所述金属膜层上形成光刻胶层；
对所述光刻胶层进行曝光和显影，形成光刻胶层图形，所述光刻胶层图形至少包括第一图形，所述第一图形与用于设置所述漫反射层的区域对应；
去除未被所述光刻胶层图形覆盖的金属膜层，形成金属膜层图形；
采用等离子工艺对所述光刻胶层图形进行轰击，使得所述光刻胶层图形被灰化，并继续对所述金属膜层图形进行轰击，使得所述金属膜层图形的表面凹凸不平，所述金属膜层图形包括漫反射层的图形；
剥离剩余的光刻胶。
9.根据权利要求7所述的阵列基板的制作方法，其特征在于，
所述形成位于像素区域内的漫反射层的步骤之前还包括：
形成绝缘层；
采用等离子工艺对所述绝缘层进行轰击，形成表面凹凸不平的绝缘层；
其中，所述形成位于像素区域内的漫反射层的步骤包括：
形成金属膜层；
在所述金属膜层上形成光刻胶层；
对所述光刻胶层进行曝光和显影，形成光刻胶层图形，所述光刻胶层图形至少包括第一图形，所述第一图形与用于设置所述漫反射层的区域对应；
去除未被所述光刻胶层图形覆盖的金属膜层，形成表面凹凸不平的金属膜层的图形，所述金属膜层的图形包括漫反射层的图形；
剥离剩余的光刻胶。
10.根据权利要求8或9所述的阵列基板的制作方法，其特征在于，所述光刻胶层图形还包括第二图形，所述第二图形与用于设置为所述阵列基板的薄膜晶体管遮挡背光的遮光层的区域对应，形成的金属膜层图形还包括遮光层的图形。
11.一种显示装置，其特征在于，包括如权利要求1-6任一项所述的阵列基板。
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