CN107359140B - 以压差法抑制材料翘曲的方法 - Google Patents
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Abstract
本发明公开了一种以压差法抑制材料翘曲的方法,其步骤包括:a.准备多个载板;b.准备多个载板抵压装置,各载板抵压装置具有相对的一上表面及一下表面,该下表面设置至少一气囊,该上表面对应至少一气囊放置至少一载板;c.各载板及各载板抵压装置于一处理腔室内,笼罩在该处理腔室的工作温度及工作压力中;d.利用气囊内部的第一预定压力和该处理腔室的工作压力所形成的压力差,有效抑制载板翘曲变形,大幅度提高了载板的生产质量及降低生产成本。另,借由真空吸力将气囊吸附在载板抵压装置的下表面,方便取出载板,有效节省人力作业成本。
Description
技术领域
本发明涉及电子封装的技术领域,尤指是指一种以压差法抑制材料翘曲的方法。
背景技术
近年来电子技术日新月异,利用集成电路元件所组成的电子产品,已成为现代人日常生活中不可或缺的工具。随着电子产品迈向轻、薄、短、小设计的潮流,半导体封装技术也相对地开发出许多高密度的半导体封装形式。当一封装构造大量生产时,一般是将多个半导体芯片或电子元件固设于一基板上,随后进行封胶制程,接着再对该封装基板进行切割,以形成多个封装单元。然而,由于该封胶制程所使用的封胶材料与该封装基板的热膨胀系数不同,因此在封胶后的硬化(curing)制程中,该封装基板与该封胶材料间会随温度变化而产生不同的热膨胀或热收缩,导致该封装基板产生热应力而翘曲(warpage);且当硬化时的温度越高或时间越长,该封装基板所产生的翘曲就越大,使得后续切割制程难以进行。再者,该封装基板上会产生一弯曲力矩施加在该半导体芯片或电子元件上,若该弯曲力矩太大,其甚至会造成该半导体芯片或电子元件的损坏。另,封装过程为了防止基板及芯片因热膨胀系数差距太大,造成变形量不同,进而发生翘曲情况,因此基板尽可能使用热膨胀系数与芯片(主要成份为硅)较为接近的材料制作,使得基板材料的使用受到极大的限制,实有加以改良的必要。
所以,针对上述习知封装结构因热应力而产生翘曲所存在的问题点,如何开发一种更具有理想实用性并兼顾经济效益的抑制材料翘曲的方法,实为相关业者积极研发突破的目标及方向。
欲解决的技术问题点:习知封装结构由于在封胶制程所使用的封胶材料与封装基板的热膨胀系数不同,导致该封装基板因温度变化产生热应力而翘曲(warpage),严重影响产品的可靠性与质量,实有加以改良的必要。
鉴于此,本发明人本于多年从事相关产品的制造开发与设计经验,针对上述的目标,详加设计与审慎评估后,终得本发明。
发明内容
本发明的目的在于提供一种有效抑制载板翘曲变形,大幅度提高了载板的生产质量及有效降低生产成本的以压差法抑制材料翘曲的方法。
基于此,本发明主要采用下列技术手段,来实现上述目的。
一种以压差法抑制材料翘曲的方法,步骤包括:
a.准备多个载板,各载板具有相对的一第一表面及一第二表面;
b.准备多个载板抵压装置,各载板抵压装置相互平行设置于一处理框架内侧,该载板抵压装置包含至少一气体入口、至少一气体出口、至少一气囊及至少一气体通道,至少一气体入口连接一气压源,各载板抵压装置具有相对的一上表面及一下表面,该下表面设置至少一该气囊,该上表面对应至少一气囊放置至少一载板,至少一气体通道一端结合至少一气体入口及至少一气体出口,另一端结合至少一气囊,所述气囊及所述气体通道相连通且形成一密闭空间;另,最上层的该载板抵压装置的上表面不放置载板。
c.各载板及各载板抵压装置于一处理腔室内,笼罩在该处理腔室的工作温度及工作压力中;
d.通过该气压源对各气囊填充气体,使气体经由各气体通道流入各气囊,让各气囊内部充满气体至第一预定压力,使各气囊外部分别抵压各载板的第一表面,利用各气囊内部的第一预定压力和该处理腔室的工作压力所形成的压力差,克服各载板由于材料热膨胀所产生的热应力,抑制各载板翘曲变形,其中各气囊内部的第一预定压力大于该处理腔室的工作压力,压力差大于0.01大气压( atm )。
进一步,所述以压差法抑制材料翘曲的方法还包括下列步骤:将各气体出口连接一真空产生器,通过该真空产生器,使各气体通道及各气囊内的压力下降为真空压力的第二预定压力,借由真空吸力将各气囊分别吸附在各载板抵压装置的下表面,方便取出各载板。
进一步,该载板抵压装置可滑移地套设于该处理框架内侧。
进一步,该载板抵压装置的下表面通过至少一密封结构固设至少一气囊。
进一步,该载板为一印刷电路板、一有机基板、一玻璃基板、一金属基板、一导电支架、一晶圆、一硅中介层、一封装体至少其中之一。
进一步,该气囊以聚酰亚胺(polyimide)或铁氟龙(Teflon)材质制成。
进一步,该处理腔室内工作温度的设定介于摄氏20度至摄氏800度的范围,工作压力变化范围的设定介于1.01大气压( atm )至100大气压( atm )之间。
进一步,在最底层的该载板抵压装置下方,还可相互平行设置一置物板于该处理框架内侧,该置物板上表面对应最底层的该载板抵压装置上的至少一气囊放置至少一载板。
进一步,该置物板可滑移地套设于该处理框架内侧。
进一步,该第二预定压力变化范围的设定介于0.01托耳( Torr ) 至760托耳(Torr )之间。
其中各该载板抵压装置上的气体入口、气体出口亦可合并形成气体出入口,气体出入口可同时连接该气压源及该真空产生器。另,当置入载板于载板抵压装置前亦可先执行本步骤,借以挪出更多的作业空间,有效节省人力作业成本。
前述,该气压源为一空气压缩机或厂务气体管路。
前述,该真空产生器为一真空泵浦。
前述,各载板抵压装置可分别连接或共享气压源。
前述,各载板抵压装置可分别连接或共享真空产生器。
本发明以压差法抑制材料翘曲的方法采用上述技术手段后,可视制程需求调整各载板抵压装置的间距及载板抵压装置的使用数量,有效提升制程弹性运用的灵活度;利用气囊内部的第一预定压力和处理腔室的工作压力所形成的压力差,对载板的第一表面施加作用力,有效抑制载板翘曲变形,大幅度提高了载板的生产质量及有效降低生产成本 ;借由真空吸力将各气囊分别吸附在各载板抵压装置的下表面,无需人力挪移各气囊,即可轻易地置入及取出各载板,有效节省人力作业成本。
附图说明
图1为本发明的较佳实施例的以压差法抑制材料翘曲的方法的流程图。
图2为本发明的较佳实施例的气囊抵压状态示意图。
【符号说明】
501-505 步骤 10 载板
11 第一表面 12 第二表面
20 载板抵压装置 201 上表面
202 下表面 21 气体入口
22 气体出口 23 气囊
24 密封结构 25 气体通道
26 气压源 27 置物板
28 真空产生器 30 处理框架
31 滑槽 40 处理腔室。
具体实施方式
有关本发明所采用的技术、手段及其功效,兹举一较佳实施例并配合图式详细说明于后,相信本发明上述的目的、构造及特征,当可深入而具体的了解。
参阅图1至图2所示,本发明提供一种以压差法抑制材料翘曲的方法,其步骤包括:a. (步骤501)准备多个载板10,各载板10具有相对的一第一表面11及一第二表面12,该载板10为一印刷电路板(printed circuit board)、一有机基板、一玻璃基板、一金属基板、一导电支架(lead frame)、一晶圆(wafer)、一硅中介层(silicon interposer)、一封装体(package) 至少其中之一。
b. (步骤502) 准备多个载板抵压装置20,各载板抵压装置20相互平行及可滑移地套设于一处理框架30内侧的滑槽31上,该载板抵压装置20包含至少一气体入口21、至少一气体出口22、至少一气囊23、至少一密封结构24及至少一气体通道25,至少一气体入口21连接一气压源26,该气压源26为一空气压缩机或厂务气体管路,该载板抵压装置20具有相对的一上表面201及一下表面202,该下表面202通过至少一密封结构24设置至少一气囊23,该密封结构24例如为迫紧环及O形环等的组合,该上表面201对应至少一气囊23放置至少一载板10,使所放置至少一载板10的第二表面12和该上表面201贴合,至少一气体通道25一端结合至少一气体入口21及至少一气体出口22,另一端结合至少一气囊23,该气囊23以聚酰亚胺(polyimide)或铁氟龙(Teflon)材质制成,所述气囊23及所述气体通道25相连通且形成一密闭空间,其中最底层的该载板抵压装置20下方,还可相互平行及可滑移地套设一置物板27于该处理框架30内侧的滑槽31上,该置物板27上表面对应最底层的该载板抵压装置20上的至少一气囊23放置至少一载板10,使所放置至少一载板10的第二表面12和该置物板27上表面贴合,另,最上层的该载板抵压装置20的上表面201不放置载板10。
c. (步骤503)将各载板10及各载板抵压装置20于一处理腔室40内执行封胶后的硬化(curing)、除泡等相关制程,使其笼罩在该处理腔室40的工作温度及工作压力中,该处理腔室40内工作温度的设定介于摄氏20度(室温)至摄氏800度的范围,工作压力变化范围的设定介于1.01大气压( atm )至100大气压( atm )之间。
d. (步骤504)通过该气压源26经由各气体入口 21对各气囊23填充气体,使气体经由各气体通道25流入各气囊23,让各气囊23内部充满气体至第一预定压力,使各气囊23外部分别抵压各载板10的第一表面11,利用各气囊23内部的第一预定压力和该处理腔室40的工作压力所形成的压力差,克服各载板10在该处理腔室40的工作温度下由于材料热膨胀所产生的热应力,有效抑制各载板10翘曲变形,其中各气囊23内部的第一预定压力大于该处理腔室40的工作压力,其压力差大于0.01大气压( atm )。
e. (步骤505) 各载板10在处理腔室40内完成相关制程,令工作温度下降至初始温度(室温)、工作压力下降至初始压力(室压),在各气体出口22连接一真空产生器28,该真空产生器28为一真空泵浦,同时关闭该气压源26及启动该真空产生器28,通过该真空产生器28,使各气体通道25及各气囊23内的压力下降为真空压力的第二预定压力,借由真空吸力将各气囊23分别吸附在各载板抵压装置20的下表面202,以便轻易地取出各载板10,其中第二预定压力变化范围的设定介于0.01托耳( Torr ) 至760托耳( Torr )之间。另,在步骤502中置入载板10于载板抵压装置20前亦可先执行本步骤,借以挪出更多的作业空间,有效节省人力作业成本。
本发明以压差法抑制材料翘曲的方法,在步骤502中可视制程需求调整各载板抵压装置20的间距及载板抵压装置20的使用数量,有效提升制程弹性运用的灵活度。
本发明以压差法抑制材料翘曲的方法,在步骤504中利用各气囊23内部的第一预定压力和该处理腔室40的工作压力所形成的压力差,对各载板10的第一表面11施加作用力,有效抑制至各载板10翘曲变形,大幅度提高了载板10的生产质量及有效降低生产成本。
本发明以压差法抑制材料翘曲的方法,在步骤505中借由真空吸力将各气囊23吸附在各载板抵压装置20的下表面202,无需人力挪移各气囊23,即可轻易地取出各载板10,有效节省人力作业成本。
前文针对本发明的较佳实施例为本发明的技术特征进行具体的说明;本领域的技术人员当可在不脱离本发明的精神与原则下对本发明进行变更与修改,而该等变更与修改,皆应涵盖于权利要求书所界定的范畴中。
Claims (9)
1.一种以压差法抑制材料翘曲的方法,其特征在于,步骤包括:
a.准备多个载板,各载板具有相对的一第一表面及一第二表面;
b.准备多个载板抵压装置,各载板抵压装置相互平行及可滑移地套设于一处理框架内侧,该载板抵压装置包含至少一气体入口、至少一气体出口、至少一气囊及至少一气体通道,至少一气体入口连接一气压源,各载板抵压装置具有相对的一上表面及一下表面,该下表面设置至少一该气囊,该上表面对应至少一气囊放置至少一载板,至少一气体通道一端结合至少一气体入口及至少一气体出口,另一端结合至少一气囊,所述气囊及所述气体通道相连通且形成一密闭空间;
c.各载板及各载板抵压装置于一处理腔室内,笼罩在该处理腔室的工作温度及工作压力中;
d.通过该气压源对各气囊填充气体,使气体经由各气体通道流入各气囊,让各气囊内部充满气体至第一预定压力,使各气囊外部分别抵压各载板的第一表面,其中各气囊内部的第一预定压力大于该处理腔室的工作压力,压力差大于0.01大气压。
2.如权利要求1所述的以压差法抑制材料翘曲的方法,其特征在于,还包括下列步骤:将各气体出口连接一真空产生器,通过该真空产生器,使各气体通道及各气囊内的压力下降为真空压力的第二预定压力,借由真空吸力将各气囊分别吸附在各载板抵压装置的下表面。
3.如权利要求1所述的以压差法抑制材料翘曲的方法,其特征在于:该载板抵压装置的下表面通过至少一密封结构固设至少一气囊。
4.如权利要求1所述的以压差法抑制材料翘曲的方法,其特征在于:该载板为一印刷电路板、一有机基板、一玻璃基板、一金属基板、一导电支架、一晶圆、一硅中介层、一封装体至少其中之一。
5.如权利要求1所述的以压差法抑制材料翘曲的方法,其特征在于:该气囊以聚酰亚胺或铁氟龙材质制成。
6.如权利要求1所述的以压差法抑制材料翘曲的方法,其特征在于:该处理腔室内工作温度的设定介于摄氏20度至摄氏800度的范围,工作压力变化范围的设定介于1.01大气压至100大气压之间。
7.如权利要求1所述的以压差法抑制材料翘曲的方法,其特征在于:在最底层的该载板抵压装置下方,还可相互平行设置一置物板于该处理框架内侧,该置物板上表面对应最底层的该载板抵压装置上的至少一气囊放置至少一载板。
8.如权利要求7所述的以压差法抑制材料翘曲的方法,其特征在于:该置物板可滑移地套设于该处理框架内侧。
9.如权利要求2所述的以压差法抑制材料翘曲的方法,其特征在于:该第二预定压力变化范围的设定介于0.01托耳至760托耳之间。
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