JP2003068771A - 基板に電子部品を取付ける方法 - Google Patents
基板に電子部品を取付ける方法Info
- Publication number
- JP2003068771A JP2003068771A JP2002209236A JP2002209236A JP2003068771A JP 2003068771 A JP2003068771 A JP 2003068771A JP 2002209236 A JP2002209236 A JP 2002209236A JP 2002209236 A JP2002209236 A JP 2002209236A JP 2003068771 A JP2003068771 A JP 2003068771A
- Authority
- JP
- Japan
- Prior art keywords
- component
- pressure
- equipment
- board
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29339—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75314—Auxiliary members on the pressing surface
- H01L2224/75315—Elastomer inlay
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75314—Auxiliary members on the pressing surface
- H01L2224/75317—Removable auxiliary member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Die Bonding (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
を部品に発生させることなく基板に取付け可能なタイプ
の方法を提供する。 【解決手段】 加圧焼結により基板に電子部品を取りつ
ける方法であって、金属粉と溶剤からなるペーストは前
記部品と基板の間に塗られる。一度、前記ペーストが完
全に乾燥すると、部品は基板に置かれる。その後、基板
と部品と共にそのような複数の設備は静水圧圧縮機
(6)において焼結温度で加圧される。非常に多くの複
雑で、及び又は弱い部分が同時に、しかも非常に高精度
で接続されることができる。
Description
に関し、特に、加圧焼結により基板に電子部品を取付け
る方法に関する。
95 B 1により公知である。この場合には、基板及びパワ
ー電子部品を含む設備は2個の圧力金型と共に圧縮機に
導入される。耐熱材料からなる弾力的に変形可能な本体
は部品の上面と1個の圧力金型の間に配置される。変形
可能な本体は、加圧処理の間、お互いに接続される部品
上に均一に圧力を伝える。
品の形状がかなり複雑な場合には、変形可能な本体は、
通常、全体の実表面領域上に均一に圧力を伝えるのに十
分な柔軟性を有していない。その上さらに、変形可能な
本体の熱膨張は、接続される部品を移動させ、及び又は
部品を破損させ、それはまた非常に壊れやすい。
され又は亀裂を生じた上面が機械的損傷を部品に発生さ
せることなく基板に取付けることにより、最初に述べた
タイプの方法を提供することである。
的は独立請求項1の特徴により達成される。
共に設備が加圧のため静水圧圧縮機の圧力チャンバーに
導入され、高圧の流体によりそこで加圧される。
えることがある機械的その過程において部品に損傷を与
えることがある機械的応力を発生させることなく、加圧
される設備に絶対的に均一な圧力を作用させることにな
る。
理の前に、設備が弾力的に変形可能で気密なカバーに導
入され、その後、これは閉塞される。
間を通過できないこと、及び又は接続される部品が流体
により損傷されるそれ自体ではないことを保証する。カ
バーはまた、保管及び移動の間、設備を保護するために
使用される。
共に、カバーにとって特に有利である。結果として、接
続される部品はお互いに対して固定され、それは再度、
保管及び移動を簡素化する。
数の設備は1個の圧力チャンバーで同時に加圧されるこ
とができる。これはスループット率を増加させ、製造さ
れる接続部は絶対的に一定の品質を有する。
を、図1及び図2a)及びb)を参照しつつ説明する。
図はスケッチの形式であり、長さの関係は尺度を有して
いない。
ウント基板2に取付けられるようになっている。
タ、GTO、IGBT)であり、上部に配置された複数
の接点及び又は制御電極を有している。各種電極は幾分
高く形成された面となる。部品の底面11は接触形成層
により覆われている。
デンからなる1.5mm厚のウェーハである。これには
少なくとも部品1に面する側に接触層21が供給され、
それは約2〜3μmの厚さを有し、例えば、銀からなっ
ている。
1に部品を取り付けるため、金属粉、特に銀粉からなる
焼結層3が形成される。例えば、焼結層3はケーストの
形式で塗布され、それは本質的に銀粉及び溶剤からなっ
ている。このペーストは溶剤を絞り出すことにより塗布
後に乾燥される。室温での乾燥時間は約30分である。
乾燥時間は温度が高い場合、数分に減少される。その
後、部品1は基板2に配置される。
配置された部品から形成された設備4は気密で弾力性の
あるプラスチックカバー5に導入され、その後、それは
少なくとも部分的に排気され、閉塞される。弾力性のあ
るカバーは、図2b)に示されているように、設備の輪
郭にぴったりと従う。カバーの排気はさらに設備を安定
化させる。結果として、部品及び基板は加圧処理の前又
はその間、移動できない。
ンゴム又は圧縮ポリテトラフルオロエチレンフィルムか
ら作られ、それは試験で特に適切であると認められた。
て、例えば、ゴムペーストからなる保護層を使用して、
部品と基板の間の接触領域だけを密閉することも可能で
ある。
うな設備4は静水圧圧縮機6の圧力チャンバー61に導
入される。このような静水圧圧縮機は、例えば、US6,25
0,907により公知である。
気体)7により作られ、それは高圧で圧力チャンバー6
1内に加圧される。流体は、圧力チャンバーに導入され
る前、その間及び又はその後、150と250℃の間の
焼結温度まで加熱される。
間の間、約4000N/cm2の圧力を設備に作用させ
ることにより達成される。
せることにより減少される。
温度以上の圧力流体が有利に使用される(例えば、GALD
EN HT、沸点が309℃)。
バーから取出される。
行うのに適した設備の断面図を示している。
本発明による方法の一実施例での主なステップを示して
いる。
示している。
Claims (4)
- 【請求項1】 加圧焼結により基板に電子部品を取付け
る方法であって、 本質的に金属粉からなる焼結層が、基板の接触層又は境
界面と前記接触層の両方に接触形成層を与える部品の境
界面に形成され、 前記部品の境界面が前記基板の接触面に配置され、 前記基板及び部品を備えた設備が焼結温度で加圧され、 前記設備は加圧のため静水圧圧縮機の圧力チャンバーに
導入され、 前記設備は高圧の流体により圧力チャンバー内で加圧さ
れる、ことを特徴とする方法。 - 【請求項2】 前記設備は、前記加圧処理の前に、弾力
的に変形可能で、気密なカバーに導入され、その後、前
記カバーが閉塞される請求項1に記載の方法。 - 【請求項3】 前記設備を有するカバーは、前記加圧処
理の前に、少なくとも部分的に排気される請求項2に記
載の方法。 - 【請求項4】 基板及び部品を有する複数の設備が1つ
の圧力チャンバー内で加圧される請求項1〜3のいずれ
か1の請求項に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01810711A EP1280196A1 (de) | 2001-07-18 | 2001-07-18 | Verfahren zum Befestigen von elektronischen Bauelementen auf Substraten |
EP01810711.0 | 2001-07-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2003068771A true JP2003068771A (ja) | 2003-03-07 |
Family
ID=8184038
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002209236A Pending JP2003068771A (ja) | 2001-07-18 | 2002-07-18 | 基板に電子部品を取付ける方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6935556B2 (ja) |
EP (1) | EP1280196A1 (ja) |
JP (1) | JP2003068771A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009033168A (ja) * | 2007-07-26 | 2009-02-12 | Semikron Elektronik Gmbh & Co Kg | 金属コンタクト層を有するパワー半導体素子およびその製造方法 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1783829A1 (en) * | 2005-11-02 | 2007-05-09 | Abb Research Ltd. | Method for bonding electronic components |
US7525187B2 (en) * | 2006-10-13 | 2009-04-28 | Infineon Technologies Ag | Apparatus and method for connecting components |
JP2008159820A (ja) * | 2006-12-22 | 2008-07-10 | Tdk Corp | 電子部品の一括実装方法、及び電子部品内蔵基板の製造方法 |
JP2008159819A (ja) * | 2006-12-22 | 2008-07-10 | Tdk Corp | 電子部品の実装方法、電子部品内蔵基板の製造方法、及び電子部品内蔵基板 |
DE102007054710B3 (de) * | 2007-11-16 | 2009-07-09 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung einer Halbleiterbaugruppe |
JP5083161B2 (ja) * | 2008-04-16 | 2012-11-28 | 株式会社村田製作所 | 電子部品の製造方法及び製造装置 |
DE102009008926B4 (de) * | 2009-02-13 | 2022-06-15 | Danfoss Silicon Power Gmbh | Verfahren zur Schaffung einer hochtemperatur- und temperaturwechselfesten Verbindung eines Halbleiterbausteins mit einem Verbindungspartner und einer Kontaktlasche unter Verwendung eines temperaturbeaufschlagenden Verfahrens |
CN102668051A (zh) * | 2009-10-19 | 2012-09-12 | 住友电木株式会社 | 电子装置的制造方法、电子装置以及制造电子装置的设备 |
DE102010020900C5 (de) * | 2010-05-18 | 2013-06-06 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung von Leistungshalbleitersubstraten |
DE102011080929B4 (de) * | 2011-08-12 | 2014-07-17 | Infineon Technologies Ag | Verfahren zur Herstellung eines Verbundes und eines Leistungshalbleitermoduls |
DE102012212249B4 (de) * | 2012-07-12 | 2016-02-25 | Infineon Technologies Ag | Verfahren zur Herstellung eines Verbundes und eines Halbleitermoduls |
US20140224409A1 (en) * | 2013-02-11 | 2014-08-14 | International Rectifier Corporation | Sintering Utilizing Non-Mechanical Pressure |
EP2800131A1 (en) * | 2013-04-29 | 2014-11-05 | ABB Technology AG | Method for sinter bonding semiconductor devices |
US9355984B2 (en) * | 2013-07-18 | 2016-05-31 | Infineon Technologies Ag | Electronic device and method for fabricating an electronic device |
DE102014111634A1 (de) * | 2014-08-14 | 2016-02-18 | Atv Technologie Gmbh | Vorrichtung zum insbesondere thermischen Verbinden mikro-elektromechanischer Bauteile |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01255231A (ja) * | 1988-03-03 | 1989-10-12 | Siemens Ag | 基板に電子デバイスを固着する方法及び装置 |
JPH0529362A (ja) * | 1990-06-06 | 1993-02-05 | Siemens Ag | 半導体と基板との接合方法及び装置 |
US5352629A (en) * | 1993-01-19 | 1994-10-04 | General Electric Company | Process for self-alignment and planarization of semiconductor chips attached by solder die adhesive to multi-chip modules |
JPH08235931A (ja) * | 1995-02-24 | 1996-09-13 | Asahi Chem Ind Co Ltd | Lsiチップ接続用導電性組成物及び接続してなる回路基板 |
JPH0945725A (ja) * | 1995-07-26 | 1997-02-14 | Toshiba Chem Corp | 半導体装置の製造方法 |
JP2000133771A (ja) * | 1998-10-23 | 2000-05-12 | Hitachi Chem Co Ltd | 回路部材の実装方法 |
JP2001053426A (ja) * | 1999-03-10 | 2001-02-23 | Matsushita Electric Ind Co Ltd | 電子部品の実装構造体及びその製造方法 |
JP2001308510A (ja) * | 2000-02-18 | 2001-11-02 | Matsushita Electric Ind Co Ltd | バンプ部品実装体の製造方法及びその製造装置 |
JP2003115510A (ja) * | 2001-08-03 | 2003-04-18 | Matsushita Electric Ind Co Ltd | 半導体実装体の製造方法、および半導体実装体の製造装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3608809A (en) * | 1968-08-16 | 1971-09-28 | Western Electric Co | Apparatus for uniform multiple-lead bonding |
US4243169A (en) * | 1978-12-27 | 1981-01-06 | Union Carbide Corporation | Deformation process for producing stress relieved metal/ceramic abradable seals |
DE3777995D1 (de) * | 1986-12-22 | 1992-05-07 | Siemens Ag | Verfahren zur befestigung von elektronischen bauelementen auf einem substrat, folie zur durchfuehrung des verfahrens und verfahren zur herstellung der folie. |
JPH01309343A (ja) * | 1988-06-08 | 1989-12-13 | Fuji Electric Co Ltd | 半導体装置の実装方法 |
US5632434A (en) * | 1995-06-29 | 1997-05-27 | Regents Of The University Of California | Pressure activated diaphragm bonder |
DE59611448D1 (de) * | 1995-09-11 | 2007-12-06 | Infineon Technologies Ag | Verfahren zur Befestigung elektronischer Bauelemente auf einem Substrat durch Drucksintern |
SE507179C2 (sv) * | 1995-12-01 | 1998-04-20 | Asea Brown Boveri | Sätt och anordning för gasrening vid varmisostatisk pressning |
-
2001
- 2001-07-18 EP EP01810711A patent/EP1280196A1/de not_active Withdrawn
-
2002
- 2002-07-11 US US10/192,630 patent/US6935556B2/en not_active Expired - Fee Related
- 2002-07-18 JP JP2002209236A patent/JP2003068771A/ja active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01255231A (ja) * | 1988-03-03 | 1989-10-12 | Siemens Ag | 基板に電子デバイスを固着する方法及び装置 |
JPH0529362A (ja) * | 1990-06-06 | 1993-02-05 | Siemens Ag | 半導体と基板との接合方法及び装置 |
US5352629A (en) * | 1993-01-19 | 1994-10-04 | General Electric Company | Process for self-alignment and planarization of semiconductor chips attached by solder die adhesive to multi-chip modules |
JPH08235931A (ja) * | 1995-02-24 | 1996-09-13 | Asahi Chem Ind Co Ltd | Lsiチップ接続用導電性組成物及び接続してなる回路基板 |
JPH0945725A (ja) * | 1995-07-26 | 1997-02-14 | Toshiba Chem Corp | 半導体装置の製造方法 |
JP2000133771A (ja) * | 1998-10-23 | 2000-05-12 | Hitachi Chem Co Ltd | 回路部材の実装方法 |
JP2001053426A (ja) * | 1999-03-10 | 2001-02-23 | Matsushita Electric Ind Co Ltd | 電子部品の実装構造体及びその製造方法 |
JP2001308510A (ja) * | 2000-02-18 | 2001-11-02 | Matsushita Electric Ind Co Ltd | バンプ部品実装体の製造方法及びその製造装置 |
JP2003115510A (ja) * | 2001-08-03 | 2003-04-18 | Matsushita Electric Ind Co Ltd | 半導体実装体の製造方法、および半導体実装体の製造装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009033168A (ja) * | 2007-07-26 | 2009-02-12 | Semikron Elektronik Gmbh & Co Kg | 金属コンタクト層を有するパワー半導体素子およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20030016510A1 (en) | 2003-01-23 |
EP1280196A1 (de) | 2003-01-29 |
US6935556B2 (en) | 2005-08-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2003068771A (ja) | 基板に電子部品を取付ける方法 | |
US4903885A (en) | Method and apparatus for fastening electronic components to substrates | |
US7665399B2 (en) | System and method for vacuum generated imprinting | |
US4903886A (en) | Method and apparatus for fastening semiconductor components to substrates | |
US4126758A (en) | Method for sealing integrated circuit components with heat recoverable cap and resulting package | |
US6576996B2 (en) | Method for bonding heat sinks to overmolds and device formed thereby | |
KR101211218B1 (ko) | 2 개의 웨이퍼의 상호 콘택을 위한 방법 및 디바이스 | |
KR100910068B1 (ko) | 피처리체의 처리 장치 | |
JP2004146751A (ja) | 半導体装置及びその製造方法、回路基板、電子機器並びに半導体装置の製造装置 | |
CN102027574A (zh) | 等离子体处理室部件的保护性涂层及其使用方法 | |
KR20170126394A (ko) | 차압법으로 재료의 뒤틀림을 억제하는 방법 | |
JP4671900B2 (ja) | 接合方法および接合装置 | |
JPH0529362A (ja) | 半導体と基板との接合方法及び装置 | |
GB2357898A (en) | Plasma process apparatus and method for process for a substrate | |
US3303265A (en) | Miniature semiconductor enclosure | |
JP3736264B2 (ja) | プラズマ処理装置およびプラズマ処理方法 | |
US5201456A (en) | Process for assembly of a metal can on a substrate bearing an integrated circuit | |
CN109075127B (zh) | 贯通孔的密封结构及密封方法、以及用于将贯通孔密封的转印基板 | |
JP3612232B2 (ja) | パワー半導体装置の欠陥検査方法 | |
US3210459A (en) | Hermetic seal for semiconductor devices | |
JP6984194B2 (ja) | 加熱冷却装置 | |
RU1823031C (ru) | Способ соединени полупроводниковой пластины с термокомпенсатором | |
CN114496891A (zh) | 一种静电卡盘的集成装置及制造方法 | |
Shi et al. | Bending of Flex Leads During Thermal Cycling | |
JP4710768B2 (ja) | 半導体装置の製造装置及び半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050610 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20080806 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080825 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20081125 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20081128 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20081225 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20090106 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090223 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20090525 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20090528 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20090910 |