CN107346736B - Bilateral transient voltage suppression diode and preparation method thereof - Google Patents
Bilateral transient voltage suppression diode and preparation method thereof Download PDFInfo
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- CN107346736B CN107346736B CN201610298246.0A CN201610298246A CN107346736B CN 107346736 B CN107346736 B CN 107346736B CN 201610298246 A CN201610298246 A CN 201610298246A CN 107346736 B CN107346736 B CN 107346736B
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- 230000001052 transient effect Effects 0.000 title claims abstract description 64
- 230000001629 suppression Effects 0.000 title claims abstract description 55
- 230000002146 bilateral effect Effects 0.000 title claims abstract description 54
- 238000002360 preparation method Methods 0.000 title abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 238000004519 manufacturing process Methods 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000002161 passivation Methods 0.000 claims description 16
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 230000002457 bidirectional effect Effects 0.000 claims description 4
- 230000002401 inhibitory effect Effects 0.000 claims 1
- 238000002347 injection Methods 0.000 abstract description 15
- 239000007924 injection Substances 0.000 abstract description 15
- 238000009826 distribution Methods 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 139
- 238000009792 diffusion process Methods 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 10
- 238000010586 diagram Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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Abstract
The present invention provides a kind of bilateral transient voltage suppression diode and preparation method thereof, and production method at least includes the following steps: 1) providing the substrate of one first doping type, the substrate of first doping type includes first surface and second surface；2) the first epitaxial layer of the first doping type is formed in the first surface of the substrate of first doping type；3) epitaxial layer of the second doping type is formed on the surface of the first epitaxial layer of first doping type；4) the second epitaxial layer of the first doping type is formed on the surface of the epitaxial layer of second doping type；5) first electrode is formed on the surface of the second epitaxial layer of first doping type；6) second electrode is formed in the second surface of the substrate of first doping type.The present invention only processes the substrate face of the first doping type, and manufacture craft is simple；Meanwhile according to the stress levels of diode, it can choose the extension and injection number of each epitaxial layer, obtain uniform concentration distribution.
Description
Technical field
The invention belongs to technical field of semiconductors, it is related to a kind of bilateral transient voltage suppression diode and preparation method thereof.
Background technique
Transient voltage suppressor diode (Transient Voltage Suppressor Diode, abbreviation TVS) is by silicon
The PN junction semiconductor diode device formed by diffusion technique.When the two poles of the earth of TVS receive reversed transient state high energy impact events, it
The high impedance of its two interpolar can be become into Low ESR with the time of 10s~12s magnitude, to absorb up to thousands of watts of surge function
Rate makes the voltage clamp of two interpolars in a predetermined value, is effectively protected the precision components in electronic circuit from various
The damage of surge pulse and electrostatic.TVS has one-way type (Unidirectional) TVS and two-way type (Bi-directional)
Two kinds of TVS.Two-way type TVS is equal to reversely to be concatenated by two unidirectional TVS, and no matter surge pulse and electrostatic are from just when use
To or reverse impact can protect device well.
As shown in Figure 1, traditional bilateral transient voltage suppression diode includes: the ion by injecting the first doping type
Silicon substrate 10, positive second doping type of silicon substrate 10 positioned at first doping type of the first doping type formed
First injection diffusion layer 11, positioned at second doping type first injection 11 surface of diffusion layer oxide layer (do not show
Out), the opening for exposing the first injection diffusion layer 11 of second doping type is formed in the oxide layer；Positioned at described
The anode electrode 13 on the first injection 11 surface of diffusion layer of second doping type in opening is located at the first doping class
The second of second doping type at 10 back side of silicon substrate of type injects diffusion layer 12 and positioned at the second of second doping type
The cathode electrode 14 of injection diffusion layer surface.In conjunction with Fig. 1, the preparation method of traditional bilateral transient voltage suppression diode includes
Following steps: 1) silicon substrate 10 of the first doping type is prepared；2) respectively the silicon substrate 10 of first doping type just
The ion of the second doping type is injected at face and the back side, and the first injection diffusion layer of the second doping type is formed by diffusion technique
11 and second doping type second injection diffusion layer 12；3) first in second doping type injects 11 surface of diffusion layer
Oxide layer is formed, and forms opening in the oxide layer, described be open exposes the first injection of second doping type
Diffusion layer 11；4) the first injection 11 surface of diffusion layer of second doping type in the opening forms anode electrode
13；5) cathode electrode 14 is formed at the back side of the silicon substrate 10 of first doping type.
However, traditional bilateral transient voltage suppression diode is and making silicon substrate front and back side simultaneous processing
At preparation process is more complicated.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of bidirectional transient voltages to inhibit two
Pole pipe and preparation method thereof is needed for solving traditional bilateral transient voltage suppression diode in the prior art by silicon substrate
The problem of preparation process complexity caused by front and back side simultaneous processing are made.
In order to achieve the above objects and other related objects, the present invention provides a kind of system of bilateral transient voltage suppression diode
Make method, the bilateral transient voltage suppression diode production method at least includes the following steps:
1) substrate of one first doping type is provided, the substrate of first doping type includes first surface and the second table
Face；
2) the first epitaxial layer of the first doping type is formed in the first surface of the substrate of first doping type；
3) epitaxial layer of the second doping type is formed on the surface of the first epitaxial layer of first doping type；
4) the second epitaxial layer of the first doping type is formed on the surface of the epitaxial layer of second doping type；
5) first electrode is formed on the surface of the second epitaxial layer of first doping type；
6) second electrode is formed in the second surface of the substrate of first doping type.
A kind of preferred embodiment of production method as bilateral transient voltage suppression diode of the invention, in step 1)
In, the substrate of first doping type is to be obtained and injecting the ion of the first doping type in substrate.
A kind of preferred embodiment of production method as bilateral transient voltage suppression diode of the invention, in step 2)
In, in the method that the first surface of the substrate of first doping type forms the first epitaxial layer of the first doping type are as follows: In
First epitaxial layer of the first doping type described in the direct epitaxial growth of first surface of the substrate of first doping type, extension
The number of growth is greater than or equal to primary.
A kind of preferred embodiment of production method as bilateral transient voltage suppression diode of the invention, in step 2)
In, forming the first epitaxial layer of the first doping type in the first surface of the substrate of first doping type includes following step
It is rapid:
2-1) in the first surface epitaxial growth first of the substrate of first doping type undoped with epitaxial layer；
2-2) Xiang Suoshu first is undoped with the ion for injecting the first doping type in epitaxial layer.
A kind of preferred embodiment of production method as bilateral transient voltage suppression diode of the invention, in step 2-2)
Later further include:
2-3) repeat step 2-1)~2-2) n times, wherein N is the integer more than or equal to 1.
A kind of preferred embodiment of production method as bilateral transient voltage suppression diode of the invention, in step 3)
In, in the method that the surface of the first epitaxial layer of first doping type forms the epitaxial layer of the second doping type are as follows: in institute
State the epitaxial layer of the second doping type described in the direct epitaxial growth in surface of the first epitaxial layer of the first doping type, epitaxial growth
Number be greater than or equal to it is primary.
A kind of preferred embodiment of production method as bilateral transient voltage suppression diode of the invention, in step 3)
In, first doping type the first epitaxial layer surface formed the second doping type epitaxial layer the following steps are included:
3-1) in the surface epitaxial growth second of the first epitaxial layer of first doping type undoped with epitaxial layer；
3-2) Xiang Suoshu second is undoped with the ion for injecting the second doping type in epitaxial layer.
A kind of preferred embodiment of production method as bilateral transient voltage suppression diode of the invention, in step 3-2)
Later further include:
3-3) repeat step 3-1)~3-2) n times, wherein N is the integer more than or equal to 1.
A kind of preferred embodiment of production method as bilateral transient voltage suppression diode of the invention, in step 4)
In, in the method that the surface of the epitaxial layer of second doping type forms the second epitaxial layer of the first doping type are as follows: in institute
State the second epitaxial layer of the first doping type described in the direct epitaxial growth in surface of the epitaxial layer of the second doping type, epitaxial growth
Number be greater than or equal to it is primary.
A kind of preferred embodiment of production method as bilateral transient voltage suppression diode of the invention, in step 4)
In, second doping type epitaxial layer surface formed the first doping type the second epitaxial layer the following steps are included:
4-1) in the surface epitaxial growth third of the epitaxial layer of second doping type undoped with epitaxial layer；
4-2) Xiang Suoshu third is undoped with the ion for injecting the first doping type in epitaxial layer.
A kind of preferred embodiment of production method as bilateral transient voltage suppression diode of the invention, in step 4-2)
Later further include:
4-3) repeat step 4-1)~4-2) n times, wherein N is the integer more than or equal to 1.
A kind of preferred embodiment of production method as bilateral transient voltage suppression diode of the invention, step 4) with
It further include forming passivation protection layer on the surface of the second epitaxial layer of first doping type between step 5), and described blunt
Change the step of opening is formed in protective layer, described be open exposes the second epitaxial layer of first doping type.
A kind of preferred embodiment of production method as bilateral transient voltage suppression diode of the invention, in step 6)
In, the first electrode is formed in the surface of the second epitaxial layer of first doping type in the opening.
The present invention also provides a kind of bilateral transient voltage suppression diode, the bilateral transient voltage suppression diode packet
It includes:
The substrate of first doping type, the substrate of first doping type include first surface and second surface；
First epitaxial layer of the first doping type, positioned at the first surface of the substrate of first doping type；
The epitaxial layer of second doping type, positioned at the surface of the first epitaxial layer of first doping type；
Second epitaxial layer of the first doping type, positioned at the surface of the epitaxial layer of second doping type；
First electrode, positioned at the surface of the second epitaxial layer of first doping type；
Second electrode, positioned at the second surface of the substrate of first doping type.
As a kind of preferred embodiment of bilateral transient voltage suppression diode of the invention, the bidirectional transient voltage inhibits
Diode further includes passivation protection layer, and the passivation protection layer is located at the second epi-layer surface of first doping type, and
Opening is formed in the passivation protection layer, described be open exposes the second epitaxial layer of first doping type；Described
One electrode is located at the surface of the second epitaxial layer of first doping type in the opening.
As described above, bilateral transient voltage suppression diode and preparation method thereof of the invention, has the advantages that
1) only the substrate face of the first doping type is processed, manufacture craft is simple；It 2), can be with according to the stress levels of diode
The extension and injection number for selecting each epitaxial layer, obtain uniform concentration distribution.
Detailed description of the invention
Fig. 1 is shown as the structural schematic diagram of bilateral transient voltage suppression diode in the prior art.
Fig. 2 is shown as the flow chart of the production method of bilateral transient voltage suppression diode of the invention.
Fig. 3 to Figure 14 is shown as the knot of the production method of bilateral transient voltage suppression diode of the invention in each step
Structure schematic diagram.
Component label instructions
The silicon substrate of 10 first doping types
First injection diffusion layer of 11 second doping types
Second injection diffusion layer of 12 second doping types
13 anode electrodes
14 cathode electrodes
The substrate of 21 first doping types
211 first surfaces
212 second surfaces
First epitaxial layer of 22 first doping types
The epitaxial layer of 23 second doping types
Second epitaxial layer of 24 first doping types
25 first electrodes
26 second electrodes
27 first undoped with epitaxial layer
28 second undoped with epitaxial layer
29 thirds are undoped with epitaxial layer
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
It please refers to figure and please refers to Fig. 2 to Figure 14.It should be noted that diagram provided in the present embodiment is only with signal side
Formula illustrates basic conception of the invention, though it is only shown with related component in the present invention rather than when according to actual implementation in diagram
Component count, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind
Become, and its assembly layout kenel may also be increasingly complex.
Embodiment one
Referring to Fig. 2, the present invention provides a kind of production method of bilateral transient voltage suppression diode, the two-way transient state
The production method of voltage suppression diode at least includes the following steps:
1) substrate of one first doping type is provided, the substrate of first doping type includes first surface and the second table
Face；
2) the first epitaxial layer of the first doping type is formed in the first surface of the substrate of first doping type；
3) epitaxial layer of the second doping type is formed on the surface of the first epitaxial layer of first doping type；
4) the second epitaxial layer of the first doping type is formed on the surface of the epitaxial layer of second doping type；
5) first electrode is formed on the surface of the second epitaxial layer of first doping type；
6) second electrode is formed in the second surface of the substrate of first doping type.
Step 1) is executed, S1 step and Fig. 3 in Fig. 2 are please referred to, the substrate 2 of one first doping type is provided, described the
The substrate 21 of one doping type includes first surface 211 and second surface 212.
As an example, the substrate 2 of first doping type is the ion by injecting the first doping type in substrate
And it obtains.The substrate 2 of first doping type can be but be not limited only to silicon substrate.
Step 2) is executed, S2 step and the fig. 4 to fig. 6 in Fig. 2 are please referred to, in the substrate 21 of first doping type
First surface 211 forms the first epitaxial layer 22 of the first doping type.
As an example, the first surface 211 in the substrate 21 of first doping type forms the of the first doping type
The method of one epitaxial layer 22 are as follows: described in the direct epitaxial growth of first surface 211 of the substrate 21 of first doping type
First epitaxial layer 22 of one doping type, as shown in Figure 4.The number of direct epitaxial growth can be according to finally formed described double
It is selected to the stress levels of transient voltage suppressor diode, it can be for once, twice or repeatedly.
As an example, the first surface 211 in the substrate 21 of first doping type forms the of the first doping type
One epitaxial layer 22 the following steps are included:
2-1) in 211 epitaxial growth first of first surface of the substrate 21 of first doping type undoped with epitaxial layer
27, as shown in Figure 5；
2-2) using ion implantation technology to described first undoped with the ion for injecting the first doping type in epitaxial layer 27,
To form the epitaxial layer 22 of first doping type, as shown in Figure 6.
As an example, can also include: after step 2-2)
2-3) repeat step 2-1)~2-2) n times, wherein N is the integer more than or equal to 1.The specific value of N can root
Selected according to the stress levels of the finally formed bilateral transient voltage suppression diode, N can for it is arbitrarily large in or wait
In 1 integer.
Step 3) is executed, the S3 step and Fig. 7 to Fig. 9 in Fig. 2 are please referred to, in the first extension of first doping type
The surface of layer 22 forms the epitaxial layer 23 of the second doping type.
As an example, forming the extension of the second doping type on the surface of the first epitaxial layer 22 of first doping type
The method of layer 23 are as follows: the second doping class described in the direct epitaxial growth in surface of the first epitaxial layer 22 of first doping type
The epitaxial layer 23 of type, as shown in Figure 7.The number of direct epitaxial growth can press down according to the finally formed bidirectional transient voltage
The stress levels of diode processed are selected, can be for once, twice or repeatedly.
As an example, forming the extension of the second doping type on the surface of the first epitaxial layer 22 of first doping type
Layer 23 the following steps are included:
3-1) in the surface epitaxial growth second of the first epitaxial layer 22 of first doping type undoped with epitaxial layer 28,
As shown in Figure 8；
3-2) using ion implantation technology to described second undoped with the ion for injecting the second doping type in epitaxial layer 28,
To form the epitaxial layer 23 of second doping type, as shown in Figure 9.
As an example, after step 3-2) further include:
3-3) repeat step 3-1)~3-2) n times, wherein N is the integer more than or equal to 1.The specific value of N can root
Selected according to the stress levels of the finally formed bilateral transient voltage suppression diode, N can for it is arbitrarily large in or wait
In 1 integer.
Step 4) is executed, the S4 step and Figure 10 to Figure 12 in Fig. 2 are please referred to, in the epitaxial layer of second doping type
23 surface forms the second epitaxial layer 24 of the first doping type.
As an example, forming the second extension of the first doping type on the surface of the epitaxial layer 23 of second doping type
The method of layer 24 are as follows: the first doping type described in the direct epitaxial growth in surface of the epitaxial layer 23 of second doping type
Second epitaxial layer 24, as shown in Figure 10.The number of epitaxial growth is greater than or equal to primary.The number of direct epitaxial growth can root
It is selected according to the stress levels of the finally formed bilateral transient voltage suppression diode, can be once, is twice or more
It is secondary.
As an example, forming the second extension of the first doping type on the surface of the epitaxial layer 23 of second doping type
Layer 24 the following steps are included:
4-1) such as scheme in the surface epitaxial growth third of the epitaxial layer 23 of second doping type undoped with epitaxial layer 29
Shown in 11；
4-2) Xiang Suoshu third is mixed undoped with the ion for injecting the first doping type in epitaxial layer 29 with forming described first
Second epitaxial layer 24 of miscellany type, as shown in figure 12.
As an example, after step 4-2) further include:
4-3) repeat step 4-1)~4-2) n times, wherein N is the integer more than or equal to 1.The specific value of N can root
Selected according to the stress levels of the finally formed bilateral transient voltage suppression diode, N can for it is arbitrarily large in or wait
In 1 integer.
As an example, further including being formed on the surface of the second epitaxial layer 24 of first doping type after step 4)
Passivation protection layer (not shown), and the step of opening is formed in the passivation protection layer by lithographic etch process, it is described to open
Mouth exposes the second epitaxial layer 24 of first doping type.
As an example, the passivation protection layer can be but be not limited only to silicon oxide layer.The opening corresponds to described the
Active area in the substrate 21 of one doping type, i.e., in the active region for the substrate 21 for corresponding to first doping type
The opening is formed in the passivation protection layer.
Step 5) is executed, S5 step and Figure 13 in Fig. 2 are please referred to, in the second epitaxial layer 24 of first doping type
Surface formed first electrode 25.
As an example, being formed by the surface deposition metal layer of the second epitaxial layer 24 in first doping type described
First electrode 25 more specifically passes through the surface of the second epitaxial layer 24 of first doping type in the opening
Deposited metal forms the first electrode 25.Sun of the first electrode 25 as the bilateral transient voltage suppression diode
Pole.
Step 6) is executed, S6 step and Figure 14 in Fig. 2 are please referred to, the second of the substrate 21 of first doping type
Surface 212 forms second electrode 26.
As an example, 212 deposited metal of second surface by the substrate 21 in first doping type forms institute
State second electrode 26.Cathode of the second electrode 26 as the bilateral transient voltage suppression diode.
In the production method of the bilateral transient voltage suppression diode in the present embodiment, only to the first doping class
The substrate 21 positive (i.e. first surface 211) of type is processed, and entire manufacture craft is fairly simple；Meanwhile in the production process,
According to the stress levels of diode, the extension and injection number of each epitaxial layer can be selected, to obtain uniform concentration distribution.
Embodiment two
Please continue to refer to Figure 14, the present invention also provides a kind of bilateral transient voltage suppression diode, the two-way transient state electricity
Constrain diode processed to obtain using the production of production method described in embodiment one, the bilateral transient voltage suppression diode
It include: the substrate 21 of the first doping type, the substrate 21 of first doping type includes first surface 211 and second surface
212；First epitaxial layer 22 of the first doping type, the first epitaxial layer 22 of first doping type are located at first doping
The first surface 211 of the substrate 21 of type；The epitaxial layer 23 of second doping type, the epitaxial layer of second doping type 23
In the surface of the first epitaxial layer 22 of first doping type；Second epitaxial layer 24 of the first doping type, described first mixes
Second epitaxial layer 24 of miscellany type is located at the surface of the epitaxial layer 23 of second doping type；First electrode 25, described first
Electrode 25 is located at the surface of the second epitaxial layer 24 of first doping type；Second electrode 26, the second electrode 26 are located at
The second surface 212 of the substrate 21 of first doping type.
As an example, the bilateral transient voltage suppression diode further includes passivation protection layer (not shown), the passivation
Protective layer is located at 24 surface of the second epitaxial layer of first doping type, and opening is formed in the passivation protection layer, institute
State the second epitaxial layer 24 that opening exposes first doping type；The first electrode 25 is located at described in the opening
The surface of second epitaxial layer 24 of the first doping type.
In conclusion the present invention provides a kind of bilateral transient voltage suppression diode and preparation method thereof, production method is extremely
Less the following steps are included: 1) providing the substrate of one first doping type, the substrate of first doping type includes first surface
And second surface；2) the first epitaxial layer of the first doping type is formed in the first surface of the substrate of first doping type；
3) epitaxial layer of the second doping type is formed on the surface of the first epitaxial layer of first doping type；4) it is mixed described second
The surface of the epitaxial layer of miscellany type forms the second epitaxial layer of the first doping type；5) outside the second of first doping type
The surface for prolonging layer forms first electrode；6) second electrode is formed in the second surface of the substrate of first doping type.This hair
Bright only to process to the substrate face of the first doping type, manufacture craft is simple；Meanwhile according to the stress levels of diode,
The extension and injection number that can choose each epitaxial layer, obtain uniform concentration distribution.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (12)
1. a kind of production method of bilateral transient voltage suppression diode, it is characterised in that: the following steps are included:
1) substrate of one first doping type is provided, the substrate of first doping type includes first surface and second surface；
2) the first epitaxial layer of the first doping type is formed in the first surface of the substrate of first doping type, including as follows
Step:
2-1) in the first surface epitaxial growth first of the substrate of first doping type undoped with epitaxial layer；
2-2) Xiang Suoshu first is undoped with the ion for injecting the first doping type in epitaxial layer；
2-3) repeat step 2-1)~2-2) n times, wherein N is the integer more than or equal to 1；
3) epitaxial layer of the second doping type is formed on the surface of the first epitaxial layer of first doping type；
4) the second epitaxial layer of the first doping type is formed on the surface of the epitaxial layer of second doping type；
5) first electrode is formed on the surface of the second epitaxial layer of first doping type；
6) second electrode is formed in the second surface of the substrate of first doping type.
2. the production method of bilateral transient voltage suppression diode according to claim 1, it is characterised in that: in step 1)
In, the substrate of first doping type is to be obtained and injecting the ion of the first doping type in substrate.
3. the production method of bilateral transient voltage suppression diode according to claim 1, it is characterised in that: in step 3)
In, in the method that the surface of the first epitaxial layer of first doping type forms the epitaxial layer of the second doping type are as follows: in institute
State the epitaxial layer of the second doping type described in the direct epitaxial growth in surface of the first epitaxial layer of the first doping type, epitaxial growth
Number be greater than or equal to it is primary.
4. the production method of bilateral transient voltage suppression diode according to claim 1, it is characterised in that: in step 3)
In, first doping type the first epitaxial layer surface formed the second doping type epitaxial layer the following steps are included:
3-1) in the surface epitaxial growth second of the first epitaxial layer of first doping type undoped with epitaxial layer；
3-2) Xiang Suoshu second is undoped with the ion for injecting the second doping type in epitaxial layer.
5. the production method of bilateral transient voltage suppression diode according to claim 4, it is characterised in that: in step 3-
2) after further include:
3-3) repeat step 3-1)~3-2) n times, wherein N is the integer more than or equal to 1.
6. the production method of bilateral transient voltage suppression diode according to claim 1, it is characterised in that: in step 4)
In, in the method that the surface of the epitaxial layer of second doping type forms the second epitaxial layer of the first doping type are as follows: in institute
State the second epitaxial layer of the first doping type described in the direct epitaxial growth in surface of the epitaxial layer of the second doping type, epitaxial growth
Number be greater than or equal to it is primary.
7. the production method of bilateral transient voltage suppression diode according to claim 1, it is characterised in that: in step 4)
In, second doping type epitaxial layer surface formed the first doping type the second epitaxial layer the following steps are included:
4-1) in the surface epitaxial growth third of the epitaxial layer of second doping type undoped with epitaxial layer；
4-2) Xiang Suoshu third is undoped with the ion for injecting the first doping type in epitaxial layer.
8. the production method of bilateral transient voltage suppression diode according to claim 7, it is characterised in that: in step 4-
2) after further include:
4-3) repeat step 4-1)~4-2) n times, wherein N is the integer more than or equal to 1.
9. the production method of bilateral transient voltage suppression diode according to claim 1, it is characterised in that: in step 4)
With further include forming passivation protection layer on the surface of the second epitaxial layer of first doping type between step 5), and described
The step of opening is formed in passivation protection layer, described be open expose the second epitaxial layer of first doping type.
10. the production method of bilateral transient voltage suppression diode according to claim 9, it is characterised in that: in step
6) in, the first electrode is formed in the surface of the second epitaxial layer of first doping type in the opening.
11. a kind of production method using the bilateral transient voltage suppression diode as described in any one of claims 1 to 10
The bilateral transient voltage suppression diode of production characterized by comprising
The substrate of first doping type, the substrate of first doping type include first surface and second surface；
First epitaxial layer of the first doping type, positioned at the first surface of the substrate of first doping type；
The epitaxial layer of second doping type, positioned at the surface of the first epitaxial layer of first doping type；
Second epitaxial layer of the first doping type, positioned at the surface of the epitaxial layer of second doping type；
First electrode, positioned at the surface of the second epitaxial layer of first doping type；
Second electrode, positioned at the second surface of the substrate of first doping type.
12. bilateral transient voltage suppression diode according to claim 11, it is characterised in that: the bidirectional transient voltage
Inhibiting diode further includes passivation protection layer, and the passivation protection layer is located at the second epitaxial layer table of first doping type
Face, and opening is formed in the passivation protection layer, described be open exposes the second epitaxial layer of first doping type；Institute
State the surface of the second epitaxial layer of first doping type that first electrode is located in the opening.
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