CN107345996B - Field effect transistor test circuit and test method - Google Patents
Field effect transistor test circuit and test method Download PDFInfo
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- CN107345996B CN107345996B CN201710561823.5A CN201710561823A CN107345996B CN 107345996 B CN107345996 B CN 107345996B CN 201710561823 A CN201710561823 A CN 201710561823A CN 107345996 B CN107345996 B CN 107345996B
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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Abstract
The application provides a field effect transistor test circuit, which comprises: the signal ends FH and FL of the first path four-wire Kelvin test channel in constant voltage working mode are respectively connected with the drain electrode and the source electrode of the field effect tube to be tested to form a loop, and a current sampling resistor is connected in series in the loop; the signal ends SH and SL are respectively connected with the drain electrode and the source electrode of the field effect transistor to be tested; one input end of the operational amplifier is connected with the voltage feedback of the current sampling resistor, and the other input end of the operational amplifier is connected with one voltage source; and the voltage detection circuit is used for detecting the voltage between the grid electrode and the source electrode of the field effect transistor to be detected. Correspondingly, the application also provides a testing method based on the testing circuit, the circuit realizes the feedback of the four-wire Kelvin testing channel, and the forward transconductance test of the field effect transistor to be tested can be completed according to the calculation formula of the forward transconductance by combining the current value specified by the testing condition.
Description
Technical Field
The application relates to the technical field of circuit testing, in particular to a field effect transistor testing circuit and a testing method.
Background
The forward transconductance (Forward Transconductance) of the FET is used for representing the relation between the output and the input of the FET, namely drain current I D Voltage V between gate and source GS The mathematical arithmetic formula of the change ratio of (2) is as follows: gfs =di D /dV GS Where gfs denotes the forward transconductance of the field effect transistor. On the transfer characteristic curve of the field effect transistor, gfs is the slope of the tangent line of the transfer characteristic curve, reflecting the voltage V between the gate and the source in the field effect transistor GS For drain current I D Is provided. In the circuit for switching operation, the higher the gfs value is, the better. Therefore gfs is an important parameter for judging the performance of the field effect transistor.
In the mass production of field effect transistor, gfs test adopts a voltage source with current measuring function connected in parallel between the drain and source of the field effect transistor to be tested, and the voltage source provides voltage V between the drain and source required by gfs test DS Drain current I D . Respectively connecting a grid electrode and a source electrode of the field effect tube to be tested in parallelA voltage source and a voltmeter. The current sampling signal of the voltage source with the current measuring function controls the output voltage V of the voltage source through feedback GS The voltmeter is used for measuring V DS 、I d Output voltage V under the condition GS 。
In mass production testing, two sampling points on the FET transfer characteristic curve are typically selected. The test conditions are V DS1 、I D1 And V DS2 、I D2 (the V DS1 And I D1 Respectively representing the voltage between the drain and the source of the first sampling point and the drain current, the V DS2 And I D2 Respectively representing the voltage between the drain and the source of the second sampling point and the drain current), and V DS1 ＝V DS2 . Measuring the corresponding output voltage V of two sampling points under the test condition GS1 And V GS2 Then take into the formulaThereby calculating the value of gfs. Currently, in mass production testing, a special testing device for semiconductor discrete devices is used to measure the forward transconductance of a field effect transistor.
Automatic test equipment (ATE, automatic Test Equipment) for analog devices or digital-to-analog hybrid devices is more versatile and can test many types of semiconductor devices. The automatic test equipment can provide voltage/current source (VIS, voltage Current Source) modules with various specifications, wherein a single VIS module comprises a plurality of four-wire kelvin test channels, each four-wire kelvin test channel has a constant voltage output or constant current output working mode, and the automatic test equipment also has the functions of measuring voltage and measuring current, and can provide various voltage/current sources (VIS, voltage Current Source). The four signal ends of the Kelvin test channel are respectively a driving signal line HIGH-end force_high (abbreviated as FH), a driving signal line LOW-end force_low (abbreviated as FL), a voltage detection signal line HIGH-end sense_high (abbreviated as SH) and a voltage detection signal line LOW-end sense_low (abbreviated as SL). Wherein signal terminals FH and FL are used to drive the voltage and current of the associated pins of the Device Under Test (DUT); the signal terminals SH and SL are used for detecting the voltage of the relevant pins of the tested device.
However, the automatic test equipment does not have a feedback control function between different four-wire kelvin test channels, so that the measurement of gfs cannot be directly realized by adopting the feedback control mode.
Disclosure of Invention
The application mainly aims to provide a field effect transistor test circuit and a test method, wherein the test circuit comprises:
the signal ends FH and FL of the first path four-wire Kelvin test channel in constant voltage working mode are respectively connected with the drain electrode and the source electrode of the field effect tube to be tested to form a loop, and a current sampling resistor is connected in series in the loop; the signal ends SH and SL are respectively connected with the drain electrode and the source electrode of the field effect transistor to be tested;
one input end of the operational amplifier is connected with the voltage feedback of the current sampling resistor, and the other input end of the operational amplifier is connected with one voltage source;
and the voltage detection circuit is used for detecting the voltage between the grid electrode and the source electrode of the field effect transistor to be detected.
From the above, the first four-wire Kelvin test channel is used to provide the drain and source voltages of the field effect transistor to be tested; the voltage source provides the grid and source voltages of the field effect transistor to be tested; and the feedback voltage of the operational amplifier detection current sampling resistor and the grid electrode and source electrode voltage of the field effect transistor to be detected are the same, and the feedback voltage and the source electrode voltage are stable. The circuit realizes the feedback of the four-wire Kelvin test channel, and can complete the forward transconductance test of the field effect transistor to be tested according to the calculation formula of the forward transconductance by combining the current value specified by the test condition.
The voltage source is a second four-wire Kelvin test channel in a constant voltage working mode.
The voltage detection circuit is a third four-wire Kelvin test channel of a voltage measurement mode.
By the method, feedback among multiple paths of four-wire Kelvin test channels on the universal automatic test equipment is realized, and then forward transconductance test of the field effect transistor to be tested can be completed according to a forward transconductance calculation formula.
The device also comprises a current detection circuit for detecting the drain current of the field effect transistor to be detected.
By the method, the drain current is detected, and the transconductance test is calculated by measuring the obtained drain current.
Wherein the current detection circuit includes: and the voltmeter is connected with the current sampling resistor in parallel.
From above, connect in parallel a voltmeter at current sampling resistance R both ends, this voltmeter is used for measuring the voltage at current sampling resistance both ends, and then can obtain the electric current that flows through current sampling resistance through ohm's law, and this electric current is the drain current of the field effect transistor that is surveyed.
Wherein the current detection circuit includes: and the voltmeter is connected in parallel with the voltage source.
From the above, a voltmeter is connected in parallel to two ends of the voltage source, and the voltmeter measures the output voltage of the voltage source, and the current flowing through the current sampling resistor can be obtained through ohm's law, namely the drain current.
The logic control module is connected with the analog-to-digital/digital-to-analog interface of the four-wire Kelvin test channel and is used for controlling the driving time of the voltage and the current of each test channel.
Therefore, the application time of the voltage between the drain electrode and the source electrode of the field effect tube to be tested is accurately controlled in the testing process, so that the problem that the junction temperature of the field effect tube to be tested is increased to cause damage to the field effect tube to be tested is avoided.
And a zener diode is connected in parallel between the signal ends FL and SL and between the signal ends FH and SH of the first path four-wire Kelvin test channel.
Therefore, since the current sampling resistor is connected in series in the FL signal line of the first four-wire kelvin test channel, the voltage difference between the FL and the SL of the first four-wire kelvin test channel is increased, so that in practical use, the zener diode is increased to avoid the voltage difference between the FL and the SL exceeding the maximum voltage difference allowed by the design.
The application also provides a test method of the test circuit, which comprises the following steps:
A. the first path of four-wire Kelvin test channel provides voltage between the drain electrode and the source electrode of the field effect transistor to be tested;
B. the voltage source outputs voltage to regulate the drain current of the field effect transistor to be tested to be a first drain current I D ；
C. After the output voltage of the operational amplifier is stabilized, the first drain current I is obtained D And a first voltage V between the grid electrode and the source electrode of the field effect transistor to be tested GS ；
D. The voltage source adjusts the output voltage to regulate the drain current of the field effect transistor to be tested to be the second drain current I' D ；
E. After the output voltage of the operational amplifier is stabilized again, the second drain current I 'is obtained' D Second voltage V 'between grid electrode and source electrode of field effect transistor to be tested' GS ；
F. Calculation formula based on forward transconductanceAnd calculating the forward transconductance of the field effect transistor to be tested.
From the above, the first four-wire Kelvin test channel is used to provide the drain and source voltages of the field effect transistor to be tested; the second four-wire Kelvin test channel is used for providing the grid and source voltages of the field effect transistor to be tested; the feedback voltage of the operational amplifier detection current sampling resistor is equal to the grid electrode and source electrode voltage of the field effect tube to be tested, and the feedback voltage and the source electrode voltage are stable in circuit, so that the drain electrode current of the field effect tube to be tested is detected by the first four-wire Kelvin test channel, and the grid electrode and source electrode voltage of the field effect tube to be tested are detected by the third four-wire Kelvin test channel, feedback of the multi-channel four-wire Kelvin test channel is realized, and further forward transconductance test of the field effect tube to be tested can be completed according to a forward transconductance calculation formula.
The application also provides a test method of the test circuit, which comprises the following steps:
A. the first path of four-wire Kelvin test channel provides voltage between the drain electrode and the source electrode of the field effect transistor to be tested;
B. the voltage source adjusts the output voltage to regulate the drain current I of the field effect transistor D ；
C. After the output voltage of the operational amplifier is stable, the voltage between the grid electrode and the source electrode of the field effect transistor to be measured is measured to be pinch-off voltage V GS 。
From above, the pinch-off voltage V is measured GS The method is used for representing that the drain electrode and the source electrode of the field effect tube to be tested are changed from off to on, or the grid electrode and the source electrode voltage which are required to be applied to the field effect tube to be tested are changed from on to off.
Drawings
FIG. 1 is an implementation diagram of a field effect transistor forward transconductance test circuit;
FIG. 2 is a schematic diagram of a field effect transistor forward transconductance test circuit;
FIG. 3 is a flow chart of a method of forward transconductance testing of a field effect transistor;
FIG. 4 is a schematic diagram of a first case of a second four-wire Kelvin test channel output signal timing;
FIG. 5 is a second example schematic diagram of a second four-wire Kelvin test channel output signal timing;
fig. 6 is a schematic diagram of the internal principle of a four-wire kelvin test channel.
Detailed Description
The field effect transistor test circuit and the test method according to the present application will be described in detail with reference to fig. 1 to 6.
The field effect tube forward transconductance test circuit comprises a current sampling resistor R connected with the source electrode of the field effect tube to be tested in series. Three four-wire Kelvin test channels are also included, corresponding to VIS-01, VIS-02, and VIS-03 in FIG. 1. The first four-wire Kelvin test channel VIS-01 and the second four-wire Kelvin test channel VIS-02 are set to be in a constant voltage working mode, and the third four-wire Kelvin test channel VIS-03 is set to be in a voltage measuring mode.
The signal ends FH and SH of the first four-wire Kelvin test channel VIS-01 are short-circuited to the drain electrode of the field effect transistor to be tested.
The signal end SL is connected to the source of the field effect transistor under test.
The source electrode of the field effect tube to be tested is connected in series with a current sampling resistor R and then connected to the signal end FL of the first four-wire Kelvin test channel VIS-01.
The connection mode enables the signal ends FH and FL of the first path four-wire Kelvin test channel VIS-01, the drain electrode and the source electrode of the field effect tube to be tested and the current sampling resistor R to form a current loop, and the voltage V between the drain electrode and the source electrode of the field effect tube to be tested is provided through the signal ends FH and FL DS Drain current I of field effect transistor to be tested D The method comprises the steps of carrying out a first treatment on the surface of the VIS-01 detects drain electrode and source electrode voltage of the field effect tube to be tested through signal ends SH and SL and adjusts output voltage of FH to FL, so that voltage drop in a transmission loop can be compensated, and the drain electrode and source electrode voltage of the field effect tube to be tested is ensured to be V specified by forward transconductance test conditions DS 。
Optionally, the current sampling resistor R may be further connected in series with the drain electrode of the field effect transistor to be tested, that is, the signal ends FH and FL of the first four-wire kelvin test channel VIS-01, the current sampling resistor R, the drain electrode of the field effect transistor to be tested, and the source electrode form a current loop.
Drain current I for field effect transistor under test D The detection of the VIS-01 can be realized through a first four-wire Kelvin test channel; alternatively, a voltmeter (not shown) may be connected in parallel across the current sampling resistor R for measuring the voltage across the current sampling resistor R, so as to obtain the current flowing through the current sampling resistor R, i.e. the drain current I of the field effect transistor to be measured D The method comprises the steps of carrying out a first treatment on the surface of the Or the voltage meter (not shown) can be connected in parallel to two ends of the second four-wire Kelvin test channel VIS-02 to measure the output voltage of the second four-wire Kelvin test channel VIS-02, and the current flowing through the current sampling resistor R can be obtained by ohm's law, namely the drain current I D 。
After the signal ends SH and FH of the second four-wire Kelvin test channel VIS-02 are shorted, one end of a first protection resistor R2 is connected in series, and the other end of the first protection resistor R2 is connected to the non-inverting input end of an operational amplifier N1.
The current sampling resistor R is connected with the second protection resistor R3 in series at one end of the source electrode of the field effect transistor to be tested, and then is connected with the inverting input end of the operational amplifier N1. The resistance value of the second protection resistor R3 is the same as that of the first protection resistor R2.
The output end of the operational amplifier N1 is connected with a third protection resistor R1 in series and then connected with the grid electrode of the field effect tube to be tested.
After the signal ends FL and SL of the second four-wire Kelvin test channel VIS-02 are short-circuited, the signal ends FL and SL of the second four-wire Kelvin test channel VIS-01 are connected to one end of the current sampling resistor R, which is connected with the signal end FL of the first four-wire Kelvin test channel VIS-01.
The connection mode enables the constant voltage output of the second four-wire Kelvin test channel VIS-02 to drive the voltage between the grid electrode and the source electrode of the field effect transistor to be tested and the change of drain current through the operational amplifier N1, the operational amplifier N1 can detect the voltage feedback of the current sampling resistor R connected in series with the field effect transistor to be tested, and the constant voltage output of the second four-wire Kelvin test channel VIS-02 is compared with the voltage feedback of the current sampling resistor R.
Alternatively, the second four-wire Kelvin test channel VIS-02 may be replaced by a voltage source as shown in FIG. 2.
The signal end SH of the third path four-wire Kelvin test channel VIS-03 is connected with the grid electrode of the field effect tube to be tested, and the signal end SL of the third path four-wire Kelvin test channel VIS-03 is connected with the source electrode of the field effect tube to be tested.
The connection mode enables the signal ends SH and SL of the third four-wire Kelvin test channel VIS-03 to measure the voltage between the grid electrode and the source electrode of the field effect transistor to be tested.
Optionally, the third four-wire Kelvin test channel VIS-03 may be replaced by a voltmeter.
As shown in fig. 3, a first embodiment of a testing method of a field effect transistor testing circuit according to the present application is as follows:
step S10: the first four-wire Kelvin test channel VIS-01 provides the voltage between the drain and source of the FET under test.
The first four-wire Kelvin test channel VIS-01 provides the voltage between the drain electrode and the source electrode of the field effect transistor to be tested through the output signal ends FH and FL, the acquisition signal ends SH and SL detect the voltage between the drain electrode and the source electrode of the field effect transistor to be tested, and the output voltage is fed back and regulated through the circuit inside the first four-wire Kelvin test channel VIS-01, so that the voltage between the drain electrode and the source electrode of the field effect transistor to be tested reaches the voltage value V meeting the test condition DS 。
Step S11: the second four-wire Kelvin test channel VIS-02 provides voltage between the gate and the source of the FET to regulate the first drain current I of the FET D 。
According to the calculation formulaV in VIS-02 The constant voltage output of the second four-wire Kelvin test channel VIS-02 is shown, R is the resistance value of a current sampling resistor R, I D Representing the first drain current required for gfs parametric testing. Due to R, I D It is known that the constant voltage output V of the second four-wire Kelvin test channel VIS-02 can thus be determined VIS-02 。
When the second four-wire Kelvin test channel VIS-02 outputs voltage V VIS-02 Then, the output voltage of the operational amplifier N1 drives the voltage between the gate and the source of the field effect transistor to be tested to change, thereby driving the drain current of the field effect transistor to be tested to change.
Step S12: after the circuit is stable, the first path four-wire Kelvin test channel VIS-01 measures the first drain current I of the field effect transistor to be tested D The third four-wire Kelvin test channel VIS-03 measures the voltage V between the first grid electrode and the source electrode of the field effect transistor to be tested GS 。
In this step, the judging circuit is stably executed by the operational amplifier N1, and the judging principle is as follows: the second four-wire Kelvin test channel VIS-02 outputs a voltage V at constant voltage VIS-02 To the non-inverting input of the operational amplifier N1 to drive the field effect to be measuredThe voltage between the gate and source of the tube changes (gradually increases from 0 until stable), so that the current between the drain and source of the field effect tube under test changes, which can be seen with reference to fig. 3 and 4. The current sampling resistor R is used for sampling the first drain current I of the field effect transistor to be tested D Converted into voltage V R And then fed back to the inverting input of the operational amplifier N1, when the voltage (V R ) With the voltage received at its non-inverting input (V VIS-02 ) When the two voltages are equal, the circuit is stable.
After the circuit is stable, the drain current of the field effect transistor to be tested is the first drain current value I specified by gfs parameter test D Measured by the first four-wire Kelvin test channel VIS-01. The third four-wire Kelvin test channel VIS-03 is used for measuring the voltage V between the grid electrode and the source electrode of the field effect transistor to be tested GS 。
Step S13: adjusting the output voltage of the second four-wire Kelvin test channel VIS-02 to adjust the drain current of the FET to be tested to be the second drain current I' D 。
In the same way as in step S11, according to the calculation formulaIn V' VIS-02 Representing the constant voltage output of the regulated second four-wire Kelvin test channel VIS-02, I' D A second drain current value specified by the gfs parameter test is indicated.
Step S14: when the circuit is stable, the first four-wire Kelvin test channel VIS-01 measures the second drain current I' D The third four-wire Kelvin test channel VIS-03 measures the voltage V 'between the second grid electrode and the source electrode of the field effect transistor to be tested' GS 。
The current sampling resistor R will be driven by the output voltage V 'in the same manner as step S12' VIS-02 Second drain current I 'of driven field effect transistor under test' D Converted into voltage V' R When the voltage received by the inverting input terminal of the operational amplifier N1 (V' R ) With the regulated voltage (V 'received at its non-inverting input' VIS-02 ) After equality, the drain current of the field effect transistor to be tested is the second drain current value I 'specified by gfs parameter test' D Measured by the first four-wire Kelvin test channel VIS-01. The third four-wire Kelvin test channel VIS-03 measures the voltage V 'between the grid electrode and the source electrode of the field effect transistor to be measured after adjustment' GS 。
Step S15: calculation formula based on forward transconductanceAnd calculating the forward transconductance of the field effect transistor to be tested.
The output signal timing of the second four-wire kelvin test channel VIS-02 in the above-described first embodiment includes two cases. FIG. 4 shows a first case in which the voltage V between the drain and source of the FET under test DS And keeping stability, and setting a certain time interval between constant voltages output by the second four-wire Kelvin test channel VIS-02 before and after the constant voltage is used for adjusting the duty ratio of the applied drain current. The time interval is set to ensure that the transient power of the field effect transistor to be tested is larger, the junction temperature of the field effect transistor can be increased, and the time interval can effectively avoid the duration time of the high temperature of the field effect transistor.
Fig. 5 shows a second case of the output signal timing of the second four-wire kelvin test channel VIS-02 according to the first embodiment, which is different from the first case in that: the two output voltages before and after the second four-wire kelvin test channel VIS-02 are continuous and the pulse duration is short, so that the measurement of the drain current and the gate and source voltages can be completed twice in a relatively short time.
Step S15: and calculating the forward transconductance of the field effect transistor to be tested.
Calculation formula based on forward transconductanceThe forward transconductance of the field effect transistor to be measured can be directly calculated.
In addition, the application also provides another embodiment of the test method, which comprises the following steps:
step S10, which is the same as the first embodiment, is not repeated.
Step S11': the second four-wire Kelvin test channel VIS-02 is controlled to regulate the drain current of the field effect transistor to be tested.
Step S12': the third path four-wire Kelvin test channel VIS-03 directly measures the voltage V between the grid electrode and the source electrode of the field effect transistor to be tested GS . The pinch-off voltage of the field effect transistor to be tested is reflected through the voltage. The physical meaning of the pinch-off voltage is the same as the voltage between the gate and the source of the field effect transistor to be tested in the step S12 and the step S14.
In addition, the present application also provides a third embodiment of the test method, including:
the current value specified by the test conditions is directly used to calculate gfs. For example, assume that a voltage V between the drain and source of the field effect transistor under test is now required DS =10v, first drain current value I D1 =2a and the voltage V between the drain and the source of the field effect transistor under test DS =10v, second drain current value I D2 Calculating gfs under two conditions of=1.5a, and obtaining the first gate-source voltage and the second gate-source voltage of the field effect transistor to be tested corresponding to the two test conditions according to the measurement circuit by actual measurement; then, the current set values 2A, 1.5A and the measured voltages of the first gate electrode, the second gate electrode and the source electrode are substituted into a gfs calculation formula to obtain a gfs measurement result. The method can omit the drain current I of the field effect transistor to be tested D Is a measurement of (a).
It should be noted that, when the forward transconductance test is performed on the fet, the transient power of the fet is relatively high, the junction temperature of the fet is raised, so that the voltage V between the drain and the source of the fet needs to be precisely controlled during the test to reduce the influence of the junction temperature change of the fet on the test and the possible damage of the fet DS First drain current I D And a second drain current I' D Is applied to the substrate. As shown in FIG. 6, a programmable logic control module and a memory are added in the first, second and third paths of four-wire Kelvin test channelsA unit, thereby realizing the output voltage V according to the pulse mode shown in FIG. 4 or FIG. 5 DS 、V VIS-02 、V’ VIS-02 So that the pulse width can be precisely controlled. In addition, the timing of the output signals of the four-wire Kelvin test channels is controlled by a synchronous technology. The logic control module is communicated through an analog-to-digital/digital-to-analog interface (ADC/DAC) of the four-wire Kelvin test channel, and the storage unit is in communication connection with the logic control module.
Further, in the first four-wire Kelvin test channel VIS-01, a zener diode is connected in parallel between the signal terminals FL and SL and between the signal terminals FH and SH, so as to prevent a large voltage difference between FL and SL and between FH and SH. Since the current sampling resistor R is connected in series with the FL signal line of the first four-wire kelvin test channel VIS-01, the voltage difference between the FL and the SL of the first four-wire kelvin test channel VIS-01 is increased, and therefore, in practical use, it is required to avoid that the voltage difference between the FL and the SL exceeds the maximum voltage difference allowed by design after the current sampling resistor R is added to the signal line of the signal terminal FL.
Preferably, the wire connecting the signal end FH of the first four-wire kelvin test channel VIS-01, the drain electrode and the source electrode of the field effect transistor to be tested, and the current sampling resistor R to form a current loop is a wide-wire-diameter wire, so that the impedance of the current loop can be effectively reduced, and a larger voltage drop on the transmission wire is avoided.
The foregoing description of the preferred embodiments of the application is not intended to limit the application to the precise form disclosed, and any such modifications, equivalents, and alternatives falling within the spirit and scope of the application are intended to be included within the scope of the application.
Claims (8)
1. A test method based on a field effect transistor test circuit, the test circuit comprising:
the first path four-wire Kelvin test channel in constant voltage working mode has signal ends FH and FL connected with drain electrode and source electrode of the field effect tube to be tested to form a loop, and a current sampling resistor is connected in series in the loop; the signal ends SH and SL are respectively connected with the drain electrode and the source electrode of the field effect transistor to be tested;
one input end of the operational amplifier is connected with the voltage feedback of the current sampling resistor, and the other input end of the operational amplifier is connected with one voltage source;
the voltage detection circuit is used for detecting the voltage between the grid electrode and the source electrode of the field effect transistor to be detected;
the test method comprises the following steps:
A. the first path of four-wire Kelvin test channel provides voltage between the drain electrode and the source electrode of the field effect transistor to be tested;
B. the voltage source outputs voltage to regulate the drain current of the field effect transistor to be tested to be a first drain current I D ；
C. After the output voltage of the operational amplifier is stabilized, the first drain current I is obtained D And a first voltage V between the grid electrode and the source electrode of the field effect transistor to be tested GS ；
D. The voltage source adjusts the output voltage to regulate the drain current of the field effect transistor to be tested to be the second drain current I' D ；
E. After the output voltage of the operational amplifier is stabilized again, the second drain current I 'is obtained' D Second voltage V 'between grid electrode and source electrode of field effect transistor to be tested' GS ；
F. Calculation formula based on forward transconductanceAnd calculating the forward transconductance of the field effect transistor to be tested.
2. The method of claim 1, wherein the voltage source is a second four-wire kelvin test channel in a constant voltage mode of operation.
3. The method of claim 1, wherein the voltage detection circuit is a third four-wire kelvin test channel of a voltage measurement mode.
4. The method of claim 1, further comprising a current detection circuit for detecting a drain current of the field effect transistor under test.
5. The test method of claim 4, wherein the current detection circuit comprises: and the voltmeter is connected with the current sampling resistor in parallel.
6. The test method of claim 4, wherein the current detection circuit comprises: and the voltmeter is connected in parallel with the voltage source.
7. A test method according to any one of claims 1, 2 or 3, further comprising a logic control module connected to the analog-to-digital/digital-to-analog interface of the four-wire kelvin test channels for controlling the driving time of the voltages and currents of the respective test channels.
8. The test method according to claim 1, wherein a zener diode is connected in parallel between the signal terminals FL and SL and between the signal terminals FH and SH of the first four-wire kelvin test channel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201710561823.5A CN107345996B (en) | 2017-07-11 | 2017-07-11 | Field effect transistor test circuit and test method |
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| CN115656765B (en) * | 2022-12-29 | 2023-04-07 | 佛山市联动科技股份有限公司 | Impedance test circuit of field effect transistor wafer |
| CN116879705B (en) * | 2023-09-08 | 2023-11-07 | 江苏摩派半导体有限公司 | Method and system for testing durability of semiconductor device |
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