CN107311222B - CsPb2Br5纳米片的制备方法 - Google Patents
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- 238000002360 preparation method Methods 0.000 title claims abstract description 29
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 claims abstract description 31
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 claims abstract description 31
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- 239000005642 Oleic acid Substances 0.000 claims abstract description 31
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 claims abstract description 31
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 claims abstract description 31
- 229910052792 caesium Inorganic materials 0.000 claims abstract description 22
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000002243 precursor Substances 0.000 claims abstract description 16
- 238000002156 mixing Methods 0.000 claims abstract description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000004020 luminiscence type Methods 0.000 claims abstract description 12
- 238000003756 stirring Methods 0.000 claims abstract description 10
- 235000021355 Stearic acid Nutrition 0.000 claims abstract description 8
- ZASWJUOMEGBQCQ-UHFFFAOYSA-L dibromolead Chemical compound Br[Pb]Br ZASWJUOMEGBQCQ-UHFFFAOYSA-L 0.000 claims abstract description 8
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 claims abstract description 8
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 claims abstract description 8
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- 230000003760 hair shine Effects 0.000 claims 1
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- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
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- 238000013019 agitation Methods 0.000 description 3
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- 238000003786 synthesis reaction Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
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- 229910001417 caesium ion Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
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Abstract
本发明涉及一种可调发光CsPb2Br5纳米片的制备方法及其产品和应用,其制备方法为在氮气保护下,将硬脂酸铯、十八稀和油酸混合,制备油酸铯溶液;另将溴化铅、十八稀、辛胺和油酸混合,加热搅拌,得到PbBr2前驱体溶液;再将油酸铯溶液加入到PbBr2前驱体溶液,混合搅拌后得到CsPb2Br5纳米片。通过调控制备PbBr2前躯体溶液的反应温度在100~140℃,得到不同尺寸的CsPb2Br5纳米片,且光致发光由蓝光逐渐变成绿光。所得CsPb2Br5纳米片可以制备发光二极管、太阳能电池或光电探测器,由本发明制备CsPb2Br5纳米片构造的高单色性绿光LEDs发光效率达到了34.49lm/W。
Description
技术领域
本发明属于纳米材料领域,涉及CsPb2Br5纳米片的制备方法,更涉及这种制备方法得到的产品和应用。
背景技术
无机钙钛矿纳米材料(CsPb2X5,X=Cl,Br,I)是一种新型的功能材料,在发光二极管、太阳能电池、光电探测器等方面均具有特殊性能,广泛应用于光电器件领域。近几年,CsPb2X5 纳米材料吸引了大量研究人员的关注,特别是对其形貌及应用的研究。例如德国化学会的《应用化学国际版》(Angew.Chem.Int.Ed,2016,55,8328)报道了一种快速离子交换法,成功制备了大量高效发光的CsPb2Br5纳米片;美国化学会的《先进光学材料》(Adv.Opt.Mater,2017, 5,1600788)报道了一种高结晶和强稳定性的CsPb2Br5微米片。然而以上的报道都不涉及到对 CsPb2Br5纳米片形貌进行调控从而实现对其发光性质的调控,以及将其应用于绿光LEDs和光电探测。
发明内容
有鉴于此,本发明通过调控温度来实现对CsPb2Br5纳米片的形貌调控,并进一步利用其构造了高单色性绿光LEDs和稳定的光电探测器。本发明的目的之一在于提供一种可调发光的CsPb2Br5纳米片制备方法,目的之二是提供一种可调发光的CsPb2Br5纳米片,目的之三是提供一种利用这种CsPb2Br5纳米片制备的高单色性绿光LEDs和稳定的光电探测器。
为达到上述目的,本发明提供如下技术方案:
1.可调发光CsPb2Br5纳米片的制备方法,其制备方法步骤如下:
(1)氮气保护下,将硬脂酸铯、十八稀和油酸混合,加热并搅拌,得到油酸铯溶液;
(2)将溴化铅、十八稀、辛胺和油酸混合,加热并搅拌,得到PbBr2前驱体溶液;所述加热为加热至温度100~140℃;
(3)采用热注入法将油酸铯溶液加入到PbBr2前驱体溶液,两者混合搅拌3h,再提纯得到CsPb2Br5纳米片。
进一步,步骤(1)中所述硬脂酸铯物质的量的终浓度为1.5mol/L,十八稀和油酸体积比为20:1~2。
进一步,步骤(1)或步骤(2)中所述搅拌的时间为0.5h,步骤(1)中所述加热温度为140℃。
进一步,步骤(2)中所述溴化铅物质的量的终浓度为0.032mol/L,十八稀、辛胺和油酸体积比为15:1~2:1~2。
进一步,步骤(3)中油酸铯溶液和PbBr2前驱体溶液体积比为1:22~25。
进一步,所述提纯的方法是加入与粗产物等量的甲苯,8000r转速下离心5min,反复4~5 次。
2.由以上任一项所述的制备方法制备的CsPb2Br5纳米片,通过调控制备PbBr2前躯体溶液的反应温度在100~140℃,得到不同尺寸的CsPb2Br5纳米片,且光致发光由蓝光逐渐变成绿光。
进一步,100℃温度条件下制备的CsPb2Br5纳米片光致发光呈蓝光,120℃温度条件下制备的CsPb2Br5纳米片光致发光呈蓝绿光,140℃温度条件下制备的CsPb2Br5纳米片光致发光呈蓝光。
3.制备的CsPb2Br5纳米片在制备发光二极管、太阳能电池或光电探测器中的应用。
进一步,用CsPb2Br5纳米片制备高单色性绿光LEDs。
进一步,用CsPb2Br5纳米片制备光电探测器。
本发明的有益效果在于:1.本发明通过简单的调控温度实现对纳米片形貌的调控,从而使其具有可调的发光性质,在光电器件方面具有广泛的应用前景;2.利用本发明制备的 CsPb2Br5纳米片构造的高单色性绿光LEDs发光效率达到了34.49lm/W.3.利用本发明制备的 CsPb2Br5纳米片构造的光电探测器具有稳定的光响应。
附图说明
为了使本发明的目的、技术方案和有益效果更加清楚,本发明提供如下附图进行说明:
图1为不同温度下合成纳米片的扫描电镜和原子力显微镜图;
图2为CsPb2Br5纳米片Mapping图;
图3为实施例1-3所制备的CsPb2Br5纳米片的光学性质图,其中a是各纳米片的XRD图, b是CsPb2Br5纳米片和CsPbBr3量子点的晶体结构图,c是各纳米片的吸收和荧光图,d是各纳米片的寿命图;
图4为绿光LEDs测试结果;
图5为光电探测结果;
图6为光电探测器的电流-时间曲线;
图7为实施例1-3所制备的CsPb2Br5纳米片荧光颜色图。
具体实施方式
下面将结合附图,对本发明的优选实施例进行详细的描述。实施例中未注明具体条件的实验方法,通常按照常规条件或按照制造厂商所建议的条件。
实施例1 CsPb2Br5的制备
采用热注入方法制备CsPb2Br5纳米片,制备步骤为:
(1)通入氮气且保持机械磁力搅拌的环境下,将625mg硬脂酸铯、10ml十八稀和0.5ml 油酸混合,加热至140℃混合搅拌0.5h,得到油酸铯溶液;
(2)将100mg溴化铅、7.5ml十八稀、0.5ml辛胺和0.5ml油酸混合,加热到100℃并混合搅拌0.5h,得到PbBr2前驱体溶液;
(3)采用热注入法将0.375ml的油酸铯溶液加入到PbBr2前驱体溶液,两者混合搅拌3h,得到粗产物,因粗产物表面存在配体,不能直接使用,要将其进行提纯。提纯方法是加入与粗产物等量的甲苯,8000r转速下离心5min,反复进行4至5次,提纯得到CsPb2Br5纳米片。
实施例2 CsPb2Br5的制备
采用热注入方法制备CsPb2Br5纳米片,制备步骤为:
(1)通入氮气且保持机械磁力搅拌的环境下,将625mg硬脂酸铯、10ml十八稀和0.5ml 油酸混合,加热至140℃混合搅拌0.5h,得到油酸铯溶液;
(2)将100mg溴化铅、7.5ml十八稀、0.5ml辛胺和0.5ml油酸混合,加热到120℃并混合搅拌0.5h,得到PbBr2前驱体溶液;
(3)采用热注入法将0.375ml的油酸铯溶液加入到PbBr2前驱体溶液,两者混合搅拌3h,将粗产物提纯得到CsPb2Br5纳米片。
实施例3 CsPb2Br5的制备
采用热注入方法制备CsPb2Br5纳米片,制备步骤为:
(1)通入氮气且保持机械磁力搅拌的环境下,将625mg硬脂酸铯、10ml十八稀和0.5ml 油酸混合,加热至140℃混合搅拌0.5h,得到油酸铯溶液;
(2)将100mg溴化铅、7.5ml十八稀、0.5ml辛胺和0.5ml油酸混合,加热到140℃并混合搅拌1h,得到PbBr2前驱体溶液;
(3)采用热注入法将0.375ml的油酸铯溶液加入到PbBr2前驱体溶液,两者混合搅拌3h,将粗产物提纯得到CsPb2Br5纳米片。
将实施例1-3制备的CsPb2Br5纳米片分散于甲苯中保存。
图1为实施例1-3不同温度下制备的CsPb2Br5纳米片的扫描电镜和原子力显微镜图;由图1可知,纳米片尺寸在300nm至1um之间,多层纳米片的厚度在10nm至20nm之间;
图2为CsPb2Br5纳米片Mapping图;图3为不同温度下制备的CsPb2Br5纳米片的光学性质图,其中a是各纳米片的XRD图,b是各纳米片的晶格结构图,c是各纳米片的吸收和荧光图,d是各纳米片的寿命图;由图3可知XRD图表明合成的纳米片高度结晶,晶格结构表明在两层Br和Pb离子内有一层Cs离子。吸收和荧光图表面随着温度的升高,纳米片的吸收和荧光发生红移。寿命结果表明温度升高,寿命增加,140℃下合成的纳米片的平均寿命为9.25ns。
图7为实施例1-3不同温度下制备的CsPb2Br5纳米片的荧光照片图,由图7可知,通过调控制备PbBr2前躯体溶液的反应温度在100~140℃,不仅能得到不同尺寸的CsPb2Br5纳米片,且各纳米片的光致发光由蓝光逐渐变成绿光。随着温度的升高,纳米片尺寸逐渐减小,由1μm逐渐减小到300nm,PL发射峰发生红移,从蓝光(467nm)移至绿光(518nm)。100℃温度条件下制备的CsPb2Br5纳米片光致发光呈蓝光,120℃温度条件下制备的CsPb2Br5纳米片光致发光呈蓝光偏绿光,140℃温度条件下制备的CsPb2Br5纳米片光致发光呈绿光。
实施例4 构造高单色性绿光LEDs
在140℃下合成的CsPb2Br5纳米片能够发射窄带绿光,利用其构造高单色性绿光LEDs。采用的方法是用移液枪吸取5μL CsPb2Br5纳米片溶液滴在蓝光InGaN芯片上,并利用光谱仪 PR670测试其发光性质。通过多次涂覆CsPb2Br5纳米片,最终获得半高宽发射光谱峰值为538 nm,半高宽(FWHM)为18nm,色坐标是(0.250,0.690)的高单色性绿光,如图4所示,高单色性绿光LEDs发光效率达到了34.49lm/W.。
实施例5 构造光电探测器
制备的纳米片具有300nm至1μm的尺寸,利用其构造光电探测器,构造方法如下:
吸取20uL的100℃、120℃和140℃温度下制备的CsPb2Br5纳米片溶液分别滴在金叉指电极上,并利用Keithley 4200测试分别其性能,不同温度下制备的CsPb2Br5纳米片所构造的光电探测器都具有稳定的光响应,通过对比,100℃合成的CsPb2Br5纳米片构造的光电探测器上升、下降时间分别为0.426和0.422s,电流变化百分比达到了364%,优于其他温度下合成的纳米片构造的光电探测器,具有较好的性能,结果如图5,图6所示。
最后说明的是,以上优选实施例仅用以说明本发明的技术方案而非限制,尽管通过上述优选实施例已经对本发明进行了详细的描述,但本领域技术人员应当理解,可以在形式上和细节上对其作出各种各样的改变,而不偏离本发明权利要求书所限定的范围。
Claims (9)
1.可调发光CsPb2Br5纳米片的制备方法,其特征在于,制备方法步骤如下:
(1)氮气保护下,将硬脂酸铯、十八稀和油酸混合,加热并搅拌,得到油酸铯溶液;所述硬脂酸铯物质的量的终浓度为1.5mol/L,十八稀和油酸体积比为20:1~2;
(2)将溴化铅、十八稀、辛胺和油酸混合,加热并搅拌,得到PbBr2前驱体溶液;所述加热为加热至温度100~140℃;
(3)采用热注入法将油酸铯溶液加入步骤(2)的PbBr2前驱体溶液 ,两者混合搅拌3h,再提纯得到CsPb2Br5纳米片。
2.根据权利要求1所述的制备方法,其特征在于,步骤(1)或步骤(2)中所述搅拌的时间为0.5h-1h,步骤(1)中所述加热温度为140℃。
3.根据权利要求1所述的制备方法,其特征在于,步骤(2)中所述溴化铅物质的量的终浓度为0.032mol/L,十八稀、辛胺和油酸体积比为15:1~2:1~2,辛胺和油酸体积比1:1。
4.根据权利要求1所述的制备方法,其特征在于,步骤(3)中油酸铯溶液和PbBr2前驱体溶液体积比为1:22~25。
5.由权利要求1~4任一项所述的制备方法制备的CsPb2Br5纳米片,其特征在于,通过调控制备PbBr2前躯体溶液的反应温度在100~140℃,得到不同尺寸的CsPb2Br5纳米片,且光致发光由蓝光逐渐变成绿光。
6.根据权利要求5所述的CsPb2Br5纳米片,其特征在于,100℃温度条件下制备的CsPb2Br5纳米片光致发光呈蓝光,120℃温度条件下制备的CsPb2Br5纳米片光致发光呈蓝绿光,140℃温度条件下制备的CsPb2Br5纳米片光致发光呈绿光。
7.利用权利要求5所述的CsPb2Br5纳米片在制备发光二极管、太阳能电池或光电探测器中的应用。
8.权利要求7所述的应用,其特征在于,用CsPb2Br5纳米片制备高单色性绿光LEDs。
9.权利要求7所述的应用,其特征在于,用CsPb2Br5纳米片制备光电探测器。
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