CN107301991A - 多信道瞬时电压抑制器 - Google Patents
多信道瞬时电压抑制器 Download PDFInfo
- Publication number
- CN107301991A CN107301991A CN201610326392.XA CN201610326392A CN107301991A CN 107301991 A CN107301991 A CN 107301991A CN 201610326392 A CN201610326392 A CN 201610326392A CN 107301991 A CN107301991 A CN 107301991A
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- Prior art keywords
- diode
- common bus
- coupled
- channel
- bypass
- Prior art date
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- Granted
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- 230000001052 transient effect Effects 0.000 title claims abstract description 37
- 238000003491 array Methods 0.000 claims abstract description 24
- 230000002441 reversible effect Effects 0.000 claims abstract description 3
- 230000000087 stabilizing effect Effects 0.000 claims abstract 2
- 230000003068 static effect Effects 0.000 claims description 20
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 3
- 210000004508 polar body Anatomy 0.000 claims 1
- 230000008901 benefit Effects 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 101100116283 Arabidopsis thaliana DD11 gene Proteins 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/044—Physical layout, materials not provided for elsewhere
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
- H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0254—High voltage adaptations; Electrical insulation details; Overvoltage or electrostatic discharge protection ; Arrangements for regulating voltages or for using plural voltages
- H05K1/0257—Overvoltage protection
- H05K1/0259—Electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/044—PV modules or arrays of single PV cells including bypass diodes
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/20—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess voltage
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/005—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection avoiding undesired transient conditions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Emergency Protection Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Direct Current Feeding And Distribution (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW105111585A TWI675448B (zh) | 2016-04-14 | 2016-04-14 | 多通道暫態電壓抑制器 |
TW105111585 | 2016-04-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107301991A true CN107301991A (zh) | 2017-10-27 |
CN107301991B CN107301991B (zh) | 2020-02-28 |
Family
ID=60038491
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610326392.XA Active CN107301991B (zh) | 2016-04-14 | 2016-05-17 | 多信道瞬时电压抑制器 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10270242B2 (zh) |
CN (1) | CN107301991B (zh) |
TW (1) | TWI675448B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110021922A (zh) * | 2018-09-12 | 2019-07-16 | 晶焱科技股份有限公司 | 超低电容瞬态电压抑制器 |
CN111446691A (zh) * | 2019-01-17 | 2020-07-24 | 力智电子股份有限公司 | 暂态电压抑制元件 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN209250234U (zh) * | 2018-09-13 | 2019-08-13 | 重庆惠科金渝光电科技有限公司 | 保护电路 |
CN110967852B (zh) * | 2019-11-20 | 2021-04-27 | Tcl华星光电技术有限公司 | 液晶显示装置 |
US11509133B2 (en) * | 2020-12-23 | 2022-11-22 | Amazing Microelectronic Corp. | Transient voltage suppression device |
CN112993962A (zh) * | 2021-04-22 | 2021-06-18 | 深圳市金誉半导体股份有限公司 | 高频信号端口的esd保护电路及电源管理系统 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101483175A (zh) * | 2008-01-07 | 2009-07-15 | 矽统科技股份有限公司 | 静电放电电路 |
CN101626020A (zh) * | 2008-07-10 | 2010-01-13 | 半导体元件工业有限责任公司 | 低钳位电压esd装置及其方法 |
CN102113117A (zh) * | 2008-08-12 | 2011-06-29 | 高通股份有限公司 | 用于多裸片封装中的过电压保护的系统和方法 |
EP2410566A1 (en) * | 2010-07-22 | 2012-01-25 | Nxp B.V. | An integrated circuit, comprising ESD circuitry for protecting a terminal of the integrated circuit |
CN203445119U (zh) * | 2013-09-16 | 2014-02-19 | 杭州士兰集成电路有限公司 | 集成式双向超低电容tvs器件 |
US20150201276A1 (en) * | 2013-06-13 | 2015-07-16 | Turtle Beach Corporation | Self-bias emitter circuit |
US20150333510A1 (en) * | 2014-05-19 | 2015-11-19 | Qmotion Incorporated | Electrostatic discharge protection system for window coverings |
CN204906816U (zh) * | 2015-09-06 | 2015-12-23 | 广德利德光电有限公司 | 一种供电与信号相结合的两线制led驱动控制集成电路 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5991135A (en) * | 1998-05-11 | 1999-11-23 | Vlsi Technology, Inc. | System including ESD protection |
US6456472B1 (en) * | 2000-04-07 | 2002-09-24 | Philsar Semiconductor Inc. | ESD protection in mixed signal ICs |
US7880223B2 (en) | 2005-02-11 | 2011-02-01 | Alpha & Omega Semiconductor, Ltd. | Latch-up free vertical TVS diode array structure using trench isolation |
US7812367B2 (en) | 2008-10-15 | 2010-10-12 | Semiconductor Components Industries, Llc | Two terminal low capacitance multi-channel ESD device |
US8089095B2 (en) | 2008-10-15 | 2012-01-03 | Semiconductor Components Industries, Llc | Two terminal multi-channel ESD device and method therefor |
US8199447B2 (en) * | 2010-01-04 | 2012-06-12 | Semiconductor Components Industries, Llc | Monolithic multi-channel ESD protection device |
US20130003242A1 (en) * | 2010-07-15 | 2013-01-03 | Kun-Hsien Lin | Transient voltage suppressor for multiple pin assignments |
US8982523B2 (en) * | 2011-02-25 | 2015-03-17 | Cambium Networks, Ltd | Bias voltage circuit for biasing a transient suppression device and apparatus using same |
CN105703345A (zh) * | 2014-11-26 | 2016-06-22 | 鸿富锦精密工业(武汉)有限公司 | Usb静电防护电路 |
-
2016
- 2016-04-14 TW TW105111585A patent/TWI675448B/zh active
- 2016-05-17 CN CN201610326392.XA patent/CN107301991B/zh active Active
- 2016-06-15 US US15/183,758 patent/US10270242B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101483175A (zh) * | 2008-01-07 | 2009-07-15 | 矽统科技股份有限公司 | 静电放电电路 |
CN101626020A (zh) * | 2008-07-10 | 2010-01-13 | 半导体元件工业有限责任公司 | 低钳位电压esd装置及其方法 |
CN102113117A (zh) * | 2008-08-12 | 2011-06-29 | 高通股份有限公司 | 用于多裸片封装中的过电压保护的系统和方法 |
EP2410566A1 (en) * | 2010-07-22 | 2012-01-25 | Nxp B.V. | An integrated circuit, comprising ESD circuitry for protecting a terminal of the integrated circuit |
US20150201276A1 (en) * | 2013-06-13 | 2015-07-16 | Turtle Beach Corporation | Self-bias emitter circuit |
CN203445119U (zh) * | 2013-09-16 | 2014-02-19 | 杭州士兰集成电路有限公司 | 集成式双向超低电容tvs器件 |
US20150333510A1 (en) * | 2014-05-19 | 2015-11-19 | Qmotion Incorporated | Electrostatic discharge protection system for window coverings |
CN204906816U (zh) * | 2015-09-06 | 2015-12-23 | 广德利德光电有限公司 | 一种供电与信号相结合的两线制led驱动控制集成电路 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110021922A (zh) * | 2018-09-12 | 2019-07-16 | 晶焱科技股份有限公司 | 超低电容瞬态电压抑制器 |
US10944255B2 (en) | 2018-09-12 | 2021-03-09 | Amazing Microelectronic Corp. | Ultra low capacitance transient voltage suppressor |
CN110021922B (zh) * | 2018-09-12 | 2021-09-10 | 晶焱科技股份有限公司 | 超低电容瞬态电压抑制器 |
CN111446691A (zh) * | 2019-01-17 | 2020-07-24 | 力智电子股份有限公司 | 暂态电压抑制元件 |
CN111446691B (zh) * | 2019-01-17 | 2023-12-01 | 源芯半导体股份有限公司 | 暂态电压抑制元件 |
Also Published As
Publication number | Publication date |
---|---|
US10270242B2 (en) | 2019-04-23 |
TWI675448B (zh) | 2019-10-21 |
TW201737460A (zh) | 2017-10-16 |
CN107301991B (zh) | 2020-02-28 |
US20170302072A1 (en) | 2017-10-19 |
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Legal Events
Date | Code | Title | Description |
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20180717 Address after: Taiwan Hsinchu County China jhubei City, Taiwan 5 yuan a Street No. 9 Building 1 Applicant after: Upi Semiconductor Corp. Address before: 6/F, 9 Taiyuan First Street, Zhubei City, Hsinchu County, Taiwan, China Applicant before: UBIQ Semiconductor Corp. |
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TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210207 Address after: 3 / F, 5 / F, 197 Tai Po First Street, Tai Po Li, Zhunan Town, Miaoli County, Taiwan, China Patentee after: Yuanxin Semiconductor Co.,Ltd. Address before: 1 / F, 9 / F, No.5, Taiyuan 1st Street, Zhubei City, Hsinchu County, Taiwan, China Patentee before: uPI Semiconductor Corp. |
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TR01 | Transfer of patent right |