CN107290287A - 一种应用光谱仪来量测电浆气体解离状态的量测方法及其装置 - Google Patents
一种应用光谱仪来量测电浆气体解离状态的量测方法及其装置 Download PDFInfo
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Abstract
本发明提供一种利用光谱仪量测气体解离状态的量测方法及其装置。其原理主要藉由侦测管体内之气体解离状态,并藉由本装置计算出解离相对量值,俾于气体的主路径污染值过高时,由一第二路径适量释出被解离之反应气体,以排除该主路径之污染物其设置范围可应用于所有需量测气体解离状态之设备及/或装置,包括但不限于半导体、光电或面板等产业中的物理气相沉积设备、化学气相沉积设备或蚀刻设备等相关设备,也可直接设置于Remote Plasma Source(远端电浆源)设备内。另外,本发明也可应用在生技业、化学业及应用物理之相关行业的检验测试设备,更可进一步应用在以上相关行业之设备维修业的检验设备或测试平台。
Description
【技术领域】
本发明提供一种应用光谱仪来量测气体解离状态的量测方法及其装置。目前一般业界在应用到各种气体时,若遇到有些特殊气体解离的问题,各方均利用除光学方法以外之物理方法或化学方法来侦测及掌控气体的解离状态,进而采用包含但不限于调整气体的流量、配比或处置等解决方案。但截至目前为止,仍然无法得到确切有效的解决方案,是目前业界亟欲努力克服的棘手问题。本发明主要是跳脱上述已知技术而改以利用光谱原理来了解气体的解离状态。本案的特点在于提供一种量测气体解离状态的量测方法及其装置,利用本装置侦测管体之气体解离状态并计算出解离相对量值后,作为采用各种对应处置方式时的参考,例如可适量释出被解离的反应气体,以排除气体主路径之污染物,从而使清洁该主路径的作业更为快捷、确实。其原理主要藉由侦测管体内之气体解离状态,并藉由本装置计算出解离相对量值,俾于气体的主路径污染值过高时,由一第二路径适量释出被解离之反应气体,以排除该主路径之污染物,从而使清洁该主路径的作业更为快捷、确实。其中之主路径及结合于该主路径之第二路径供容置反应气体,而该主路径供业界进行电浆辅助沉积、薄膜蚀刻及改变材料表面等作业,以达到特殊的功能及效果。由于量测气体解离的位置有多样态,本发明之量测方法及其装置可应用于各种量测气体解离的位置,并不限于后述举例所称之腔室,所有设置量测气体解离装置之位置,均属本案之包含范畴(参阅图1)。本案发明的实施案例仅以其中之一案例作为说明,以半导体的物理气相沉积设备、化学气相沉积设备或蚀刻设备等相关设备为例来说明以上发明技术内容。
【背景技术】
按;电浆(Plasma)是一种由自由电子和带电离子为主要成分的物质形态,其广泛存在于宇宙中,常被视为是物质的第四态,被称为电浆态,或者「超气态」,也称「电浆体」。电浆是具有等量正电荷和负电荷的離子气体,更精确的定义,电浆是有着带电与中性粒子之准中性气体,电浆是这些粒子的集体行为。电浆源平台提供自稳定输送的原料气体中生成的中性活性种,用于表面改性、反应室清洁、薄膜蚀刻以及电浆辅助沉积等。
如图2所示,已知的电浆清洁制程包含主腔室1及连接该主腔室1之节流阀2、真空帮浦3及净气器4,在送入反应气体A后,于第二腔室6解离适量反应气体A,使其经由管体7进入主腔室1,以完成主腔室1的清洁作业,再配合真空帮浦3及净气器4构成真空排气5。在前述之清洁制程进行一段时间后,由于电浆沉积物亦会残留在主腔室1的壁面,使得该主腔室1会产生污染之状况,因此已知方式进行人工清洁保养,再放入积体电路晶圆测试体作测试,若测试效果不佳,则需再进一步清洁主腔室1,如此不但耗时费工,且重复放入积体电路晶圆测试体进行测试亦会增加人力及材料成本。
是以,已知作法于主腔室1以管体7连结一第二腔室6,以供容置电浆态气体,俾于主腔室1产生污染状况时,由第二腔室6解离适量反应气体A,使其经由管体7进入主腔室1,以构成对主腔室1之清洁。惟因无法得知第二腔室6需释出多少量的反应气体A方可确实完成主腔室1的清洁,因此需如前述,在第二腔室6解离适量反应气体A,使其经由管体7进入主腔室1,以完成主腔室1的清洁,再辅以人工清洁作业后,放入积体电路晶圆测试体作测试,依测试效果反应来判断是否需再进一步的清洁。此一已知方法虽利用反应气体A免除需要人工清洁保养的麻烦,却同样存在需重复放入积体电路晶圆测试体,反覆测试而增加人力及材料成本的问题。申请人有监于此,经不断研究、实验,遂萌生设计一种应用光谱仪来量测气体解离状态(包括但不限于电浆气体解离状态)的量测方法及其装置,从而使清洁该主腔室1的作业更为快捷、确实,且节省人力及材料成本。
【发明内容】
本发明之主要目的,即在提供一种应用光谱仪来量测气体解离状态的量测方法及其装置,以侦测件8侦测管体7内电浆气体之解离状态,并计算出解离相对量值,由第二腔室6适量释出被解离之反应气体A,以排除主腔室1之污染物,从而使清洁该主腔室1的作业更为快捷、确实,且节省人力及材料成本。
前述之应用光谱仪来量测气体解离状态的量测方法及其装置,藉由侦测管体7内电浆气体之解离状态,并藉由光谱仪量测电浆气体解离状态装置9计算出解离相对量值,俾于主腔室1污染值过高时,由第二腔室6适量释出被解离之反应气体A,以排除主腔室1之污染物,从而使清洁该主腔室1的作业更为快捷、确实。其中之主腔室1及结合于该主腔室1之第二腔室6供容置反应气体A,该主腔室1供半导体积体电路制造时进行电浆辅助沉积、薄膜蚀刻及改变材料表面等作业,以达到特殊的功能及效果,该侦测件8及光谱仪量测电浆气体解离状态装置9设于主腔室1与第二腔室6之间。
前述之应用光谱仪来量测气体解离状态的量测方法及其装置,其中主腔室1以管体7连结第二腔室6,该侦测件8设于该管体7之适当位置。
【附图说明】
图1为本发明实施及应用之相关领域图;
图2为已知电浆气体装置方块图;
图3为本发明之结构图;
图4为本发明之一安装点实施之方块图;
图5为本发明之另一安装点实施之方块图;
图6为本发明之另一安装点实施之方块图;
图7为本发明之另一安装点实施之方块图;
图8为本发明之使用状态图;
图9为本发明之清洁动作状态图。
主要符号说明:
1、主腔室
2、节流阀
3、真空帮浦
4、净气器
5、真空排气
6、第二腔室
7、管体
8、侦测件
9、光谱仪量测电浆气体解离状态装置
A、反应气体。
【具体实施方式】
请同时参阅图3及图4,为本发明之结构图及方块图。如图所示,本发明包含供容置电浆态气体之主腔室1,以及结合于该主腔室1的第二腔室6。其中,主腔室1供半导体积体电路制造时进行电浆辅助沉积、薄膜蚀刻及改变材料表面等作业,以达到特殊的功能及效果,其连结有节流阀2、真空帮浦3及净气器4,依据解离量值于第二腔室6适量释出反应气体A后,使其经由管体7进入主腔室1,以完成主腔室1的清洁作业,再配合真空帮浦3与净气器4构成真空排气5。
藉由前述构件的组合,构成应用光谱仪来量测气体解离状态的量测方法及其装置。俾于制程中藉由侦测件8侦测第二腔室6之解离状态,并藉由光谱仪量测电浆气体解离状态装置9计算出解离相对量值,俾于主腔室1污染值过高时,依据解离量值于第二腔室6适量释出反应气体A解离,再经由管体7进入主腔室1,以排除主腔室1之污染物,从而使主腔室1的清洁更为快捷、确实,且节省人力及材料成本。
请参阅图4及图8,为本发明之方块图及使用状态图。如图所示,本发明于使用时,如已知电浆气体装置,依据解离量值于第二腔室6适量释出反应气体A,使其经由管体7进入主腔室1,以完成主腔室1的清洁作业,再配合真空帮浦3与净气器4构成真空排气5。
请参阅图4及图9,为本发明之方块图及清洁动作状态图。如图所示,本发明当使用一段时间后,该侦测件8不断侦测第二腔室6之气体解离状态(气体波长),并藉由光谱仪量测电浆气体解离状态装置9计算出解离相对量值,显示提供予使用者,当主腔室1的污染值过高时,使用者即可开启第二腔室6,由第二腔室6依据光谱仪量测电浆气体解离状态装置9所计算出之解离相对量值,释出适量之反应气体A,使其经由管体7进入主腔室1,以构成对主腔室1之清洁,并可由光谱仪量测电浆气体解离状态装置9得知第二腔室6之电浆气体解离状态是否足以对主腔室1达到确实的清洁效果,而不需如已知电浆气体装置,必须重复放入积体电路晶圆测试体作测试后,才可得知是否需再进一步的清洁,从而使主腔室1的清洁作业更为快捷、确实,且可节省人力及材料成本。
实施例一:一种应用光谱仪来量测电浆气体解离状态的量测方法及其装置,其中,如图5所示,该侦测件8及光谱仪量测电浆气体解离状态装置9设于该第二腔室6内的适当位置,以供侦测第二腔室6中电浆气体之解离状态。
实施例二:一种应用光谱仪来量测电浆气体解离状态的量测方法及其装置,其中,如图6所示,该侦测件8及光谱仪量测电浆气体解离状态装置9设于该第一腔室1内的适当位置,以供侦测主腔室1中电浆气体之解离状态。
实施例三:一种应用光谱仪来量测电浆气体解离状态的量测方法及其装置,其中,该侦测件8及光谱仪量测电浆气体解离状态装置9设于该流体路径的适当位置,也可应用在如图3所示任一流体路径上以供侦测电浆气体之解离状态。
综上所述,本发明于主腔室1连结第二腔室6,并于主腔室1与第二腔室6之间,设有侦测件8及光谱仪量测电浆气体解离状态装置9,构成应用光谱仪来量测电浆气体解离状态的量测方法及其装置,以侦测件8侦测管体7内电浆气体之解离状态,并计算出解离相对量值,依据解离量值由第二腔室6适量释出被解离之反应气体A,使其经由管体7进入主腔室1,以排除主腔室1之污染物,从而使主腔室1的清洁更为快捷、确实,且节省人力成本。
本发明之实施应用之相关领域参阅图1之说明。本案的特点在于提供一种量测气体解离状态的方法及其装置,利用本装置侦测管体中之气体解离状态并计算出解离相对量值,以作为采用各种对应处置方式的参考,例如可适量释出被解离的反应气体,以排除气体主路径之污染物,从而使该主路径的清洁作业更为快捷、确实。其设置范围可应用于所有需量测气体解离状态之设备及/或装置,包括但不限于半导体、光电或面板等产业中的物理气相沉积设备、化学气相沉积设备或蚀刻设备等相关设备,也可直接设置于Remote PlasmaSource(远端电浆源)设备内。另外,本发明也可应用在生技业、化学业及应用物理之相关行业的检验测试设备,更可进一步应用在以上相关行业之设备维修业的检验设备或测试平台(参阅图1)。
且上述实施例仅为说明其中之一种气体解离状态量测方式与装置,本发明不仅可应用于半导体、光电或面板等产业中的物理气相沉积设备、化学气相沉积设备或蚀刻设备等相关设备,也可直接设置于Remote Plasma Source(远端电浆源)设备内,只要涉及利用光谱原理量测气体解离状态之装置,其任意设置于可量测气体解离状态之位置,不限于腔室,均属本案之包含范畴。且上述实施例并非限制本发明之范围,凡依此发明技术作些微修饰、变更,仍不失本发明之要义所在,亦不脱离本发明精神范。本发明为一实用之设计,本案诚属一具新颖性之创作,爰依法提出专利之申请,祈钧局予以审查,早日赐准专利,至感德便。
Claims (7)
1.一种应用光谱仪来量测气体解离状态的量测方法及其装置,其特征在于,包含:
一主路径,供半导体积体电路制造时,进行电浆辅助沉积、薄膜蚀刻及改变材料表面等作业,以达到特殊的功能及效果;
结合于该主路径之第二路径,供容置反应气体;
侦测件及光谱仪量测气体解离状态装置,设于主路径与第二路径之间,藉由该侦测件侦测管体内之气体解离状态,并由光谱仪量测气体解离状态装置计算出解离相对量值。
2.根据权利要求1所述的一种应用光谱仪来量测气体解离状态的量测方法及其装置,其特征在于,主路径与第二路径之间以管体连结,该侦测件及光谱仪量测气体解离状态装置设于该管体的适当位置。
3.根据权利要求1所述的一种应用光谱仪来量测气体解离状态的量测方法及其装置,其特征在于,该侦测件及光谱仪量测气体解离状态装置设于该主路径内的适当位置。
4.根据权利要求1所述的一种应用光谱仪来量测气体解离状态的量测方法及其装置,其特征在于,该侦测件及光谱仪量测气体解离状态装置设于该第二路径内的适当位置。
5.根据权利要求1所述的一种应用光谱仪来量测气体解离状态的量测方法及其装置,其特征在于,该侦测件及光谱仪量测气体解离状态装置设于该流体路径的适当位置。
6.根据权利要求1所述的一种应用光谱仪来量测气体解离状态的量测方法及其装置,其特征在于,该侦测件及光谱仪量测气体解离状态装置可设置在电浆源设备、电浆气体腔室及电控系统之装置中。
7.一种应用光谱仪来量测气体解离状态的量测方法及其装置,其特征在于,其方法及其装置应用于包括但不限于半导体、光电或面板等产业中的物理气相沉积设备、化学气相沉积设备或蚀刻设备等相关设备,也可直接设置于Remote Plasma Source(远端电浆源)设备内,另外,本发明也可应用在生技业、化学业及应用物理之相关行业的检验测试设备,更可进一步应用在以上相关行业之设备维修业的检验设备或测试平台。
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