CN107267964B - 化学气相沉积反应器中辐射测量偏离误差的缩减 - Google Patents

化学气相沉积反应器中辐射测量偏离误差的缩减 Download PDF

Info

Publication number
CN107267964B
CN107267964B CN201710251847.0A CN201710251847A CN107267964B CN 107267964 B CN107267964 B CN 107267964B CN 201710251847 A CN201710251847 A CN 201710251847A CN 107267964 B CN107267964 B CN 107267964B
Authority
CN
China
Prior art keywords
radiation
target
axis
heating element
wafer carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201710251847.0A
Other languages
English (en)
Chinese (zh)
Other versions
CN107267964A (zh
Inventor
古瑞·塔斯
周进
权大元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Veeco Instruments Inc
Original Assignee
Veeco Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/531,162 external-priority patent/US9448119B2/en
Priority claimed from US13/531,220 external-priority patent/US9085824B2/en
Application filed by Veeco Instruments Inc filed Critical Veeco Instruments Inc
Publication of CN107267964A publication Critical patent/CN107267964A/zh
Application granted granted Critical
Publication of CN107267964B publication Critical patent/CN107267964B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02Constructional details
    • G01J5/07Arrangements for adjusting the solid angle of collected radiation, e.g. adjusting or orienting field of view, tracking position or encoding angular position
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma & Fusion (AREA)
  • Radiation Pyrometers (AREA)
  • Chemical Vapour Deposition (AREA)
  • Apparatus For Disinfection Or Sterilisation (AREA)
  • Measurement Of Radiation (AREA)
CN201710251847.0A 2012-06-22 2013-06-21 化学气相沉积反应器中辐射测量偏离误差的缩减 Active CN107267964B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US13/531,162 US9448119B2 (en) 2012-06-22 2012-06-22 Radiation thermometer using off-focus telecentric optics
US13/531,162 2012-06-22
US13/531,220 2012-06-22
US13/531,220 US9085824B2 (en) 2012-06-22 2012-06-22 Control of stray radiation in a CVD chamber
CN201380033049.0A CN104520470B (zh) 2012-06-22 2013-06-21 化学气相沉积反应器中辐射测量偏离误差的缩减

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201380033049.0A Division CN104520470B (zh) 2012-06-22 2013-06-21 化学气相沉积反应器中辐射测量偏离误差的缩减

Publications (2)

Publication Number Publication Date
CN107267964A CN107267964A (zh) 2017-10-20
CN107267964B true CN107267964B (zh) 2020-06-05

Family

ID=49769419

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201710251847.0A Active CN107267964B (zh) 2012-06-22 2013-06-21 化学气相沉积反应器中辐射测量偏离误差的缩减
CN201380033049.0A Active CN104520470B (zh) 2012-06-22 2013-06-21 化学气相沉积反应器中辐射测量偏离误差的缩减

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201380033049.0A Active CN104520470B (zh) 2012-06-22 2013-06-21 化学气相沉积反应器中辐射测量偏离误差的缩减

Country Status (7)

Country Link
JP (1) JP2015528106A (ja)
KR (1) KR101679995B1 (ja)
CN (2) CN107267964B (ja)
DE (1) DE112013003131T5 (ja)
SG (1) SG11201408492QA (ja)
TW (1) TWI576570B (ja)
WO (1) WO2013192510A1 (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103776548A (zh) * 2014-02-14 2014-05-07 丹纳赫(上海)工业仪器技术研发有限公司 红外测温仪以及用于测量能量区域的温度的方法
JP6274578B2 (ja) * 2015-01-09 2018-02-07 信越半導体株式会社 エピタキシャルウェーハの製造方法
JP6574344B2 (ja) * 2015-06-23 2019-09-11 株式会社Screenホールディングス 熱処理装置および熱処理方法
EP3287190B1 (de) * 2016-08-26 2020-07-01 Aquila Biolabs GmbH Verfahren zum überwachen eines zielprozessparameters
JP6824080B2 (ja) * 2017-03-17 2021-02-03 株式会社Screenホールディングス 熱処理装置および放射温度計の測定位置調整方法
CN108254912B (zh) * 2018-01-23 2020-03-27 电子科技大学 一种用于氮化物mocvd外延生长模式的实时显微监测系统
BR112020026163A2 (pt) 2018-06-22 2021-03-23 Avava, Inc. detecção de realimentação para um dispositivo de tratamento
CN110006533A (zh) * 2019-04-11 2019-07-12 中国航发湖南动力机械研究所 用于抑制辐射源尺寸效应的器件及辐射测温计

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63238533A (ja) * 1987-03-27 1988-10-04 Minolta Camera Co Ltd 放射温度計
JP2003508729A (ja) * 1999-05-14 2003-03-04 ブランディーズ・ユニバーシティ 核酸をベースとする検出
CN1533588A (zh) * 2001-05-23 2004-09-29 马特森热力产品有限责任公司 用于热处理衬底的方法和装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57200827A (en) * 1981-06-04 1982-12-09 Kansai Coke & Chem Co Ltd Temperature measuring method of combustion chamber in coke oven
US5209570A (en) * 1989-05-30 1993-05-11 Deutsche Forschungsanstalt Fur Luft- Und Raumfahrt E.V. Device for measuring the radiation temperature of a melt in vacuum
US6411377B1 (en) * 1991-04-02 2002-06-25 Hitachi, Ltd. Optical apparatus for defect and particle size inspection
JP4240754B2 (ja) * 1999-05-11 2009-03-18 コニカミノルタセンシング株式会社 テレセントリック光学系
US6614539B1 (en) * 1999-05-11 2003-09-02 Minolta Co., Ltd. Telecentric optical system
US6680377B1 (en) * 1999-05-14 2004-01-20 Brandeis University Nucleic acid-based detection
US6310347B1 (en) * 1999-06-29 2001-10-30 Goodrich Corporation Spectrometer with planar reflective slit to minimize thermal background at focal plane
US7136159B2 (en) * 2000-09-12 2006-11-14 Kla-Tencor Technologies Corporation Excimer laser inspection system
US6492625B1 (en) * 2000-09-27 2002-12-10 Emcore Corporation Apparatus and method for controlling temperature uniformity of substrates
JP2002122480A (ja) * 2000-10-12 2002-04-26 Toshiba Corp 温度測定方法および装置、並びにプラズマ処理装置
JP4873242B2 (ja) * 2004-06-22 2012-02-08 株式会社ニコン ベストフォーカス検出方法及び露光方法、並びに露光装置
US7275861B2 (en) * 2005-01-31 2007-10-02 Veeco Instruments Inc. Calibration wafer and method of calibrating in situ temperatures
US7946759B2 (en) * 2007-02-16 2011-05-24 Applied Materials, Inc. Substrate temperature measurement by infrared transmission
EP2299250B1 (en) * 2009-09-17 2014-04-23 LayTec Aktiengesellschaft Pyrometer adapted for detecting UV-radiation and use thereof
US9121760B2 (en) * 2010-01-27 2015-09-01 Ci Systems Ltd. Room-temperature filtering for passive infrared imaging
CN102822648B (zh) * 2010-03-31 2015-05-20 柯尼卡美能达精密光学仪器株式会社 测量用光学系统以及使用了该系统的色彩亮度计及色彩仪

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63238533A (ja) * 1987-03-27 1988-10-04 Minolta Camera Co Ltd 放射温度計
JP2003508729A (ja) * 1999-05-14 2003-03-04 ブランディーズ・ユニバーシティ 核酸をベースとする検出
CN1533588A (zh) * 2001-05-23 2004-09-29 马特森热力产品有限责任公司 用于热处理衬底的方法和装置

Also Published As

Publication number Publication date
TWI576570B (zh) 2017-04-01
SG11201408492QA (en) 2015-01-29
KR101679995B1 (ko) 2016-12-06
KR20150021119A (ko) 2015-02-27
CN107267964A (zh) 2017-10-20
CN104520470A (zh) 2015-04-15
TW201403037A (zh) 2014-01-16
JP2015528106A (ja) 2015-09-24
WO2013192510A1 (en) 2013-12-27
DE112013003131T5 (de) 2015-04-16
CN104520470B (zh) 2017-05-17

Similar Documents

Publication Publication Date Title
CN107267964B (zh) 化学气相沉积反应器中辐射测量偏离误差的缩减
CN108449957B (zh) 用于非接触式感测物质的基准开关架构
US9448119B2 (en) Radiation thermometer using off-focus telecentric optics
JP3516922B2 (ja) 放射率が波長により変化する物体の温度のアクティブパイロメトリーのための方法および装置
KR100630025B1 (ko) 기판 온도 측정 센서
KR101057853B1 (ko) 열처리 챔버에서 온도 측정 장치를 캘리브레이팅하기 위한 시스템 및 프로세스
TWI379074B (en) Calibration method of a radiometric optical monitoring system used for fault detection and process monitoring
US7837383B2 (en) Apparatus and method for real time measurement of substrate temperatures for use in semiconductor growth and wafer processing
TWI435181B (zh) 具有量測裝置之微蝕刻投射曝光工具及用於量測照射強度分佈之方法
US20070095812A1 (en) In-situ wafer parameter measurement method employing a hot susceptor as a reflected light source
KR20100125370A (ko) 근적외선 스펙트럼 반사광 측정을 이용한 개선된 프로세스 감지 및 제어
WO2012177649A1 (en) Compensation of stray light interference in substrate temperature measurement
KR102039200B1 (ko) 레이저 회절을 통해 3d 반도체 구조물의 온도를 측정하는 장치 및 방법
KR102416261B1 (ko) 저온 투과 고온측정을 위한 검출기
US6799137B2 (en) Wafer temperature measurement method for plasma environments
US11703391B2 (en) Continuous spectra transmission pyrometry
US20230375460A1 (en) Epi self-heating sensor tube as in-situ growth rate sensor
TW202407300A (zh) 用於遠程溫度量測的光學感測器

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant