CN107210749B - 用于二次离子质谱仪的一次铯离子源 - Google Patents

用于二次离子质谱仪的一次铯离子源 Download PDF

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Publication number
CN107210749B
CN107210749B CN201580067008.2A CN201580067008A CN107210749B CN 107210749 B CN107210749 B CN 107210749B CN 201580067008 A CN201580067008 A CN 201580067008A CN 107210749 B CN107210749 B CN 107210749B
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ionizer
ion source
reservoir
aperture
primary ion
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Chinese (zh)
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CN107210749A (zh
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P·威廉姆斯
K·A·威廉姆斯
M·博塞
J·普林斯
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Arizona State University ASU
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Arizona State University ASU
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/022—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/20—Ion sources; Ion guns using particle beam bombardment, e.g. ionisers
    • H01J27/22—Metal ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/26—Mass spectrometers or separator tubes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2255—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident ion beams, e.g. proton beams
    • G01N23/2258—Measuring secondary ion emission, e.g. secondary ion mass spectrometry [SIMS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H3/00—Mechanisms for operating contacts
    • H01H3/02—Operating parts, i.e. for operating driving mechanism by a mechanical force external to the switch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/0004—Imaging particle spectrometry
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L7/00—Automatic control of frequency or phase; Synchronisation
    • H03L7/26—Automatic control of frequency or phase; Synchronisation using energy levels of molecules, atoms, or subatomic particles as a frequency reference

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Analytical Chemistry (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Electron Tubes For Measurement (AREA)
  • Electron Sources, Ion Sources (AREA)
CN201580067008.2A 2014-10-13 2015-10-13 用于二次离子质谱仪的一次铯离子源 Active CN107210749B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462063023P 2014-10-13 2014-10-13
US62/063,023 2014-10-13
PCT/US2015/055261 WO2016061057A1 (en) 2014-10-13 2015-10-13 Cesium primary ion source for secondary ion mass spectrometer

Publications (2)

Publication Number Publication Date
CN107210749A CN107210749A (zh) 2017-09-26
CN107210749B true CN107210749B (zh) 2021-03-19

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Country Link
US (1) US9941089B2 (enExample)
EP (1) EP3207636B1 (enExample)
JP (1) JP6879908B2 (enExample)
KR (1) KR102518443B1 (enExample)
CN (1) CN107210749B (enExample)
WO (1) WO2016061057A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10672602B2 (en) * 2014-10-13 2020-06-02 Arizona Board Of Regents On Behalf Of Arizona State University Cesium primary ion source for secondary ion mass spectrometer
US20190019662A1 (en) * 2017-07-14 2019-01-17 Purdue Research Foundation Electrophoretic mass spectrometry probes and systems and uses thereof
CN110504154B (zh) * 2018-11-25 2020-09-22 中国科学院大连化学物理研究所 一种高气密性离子迁移管
CN109360781B (zh) * 2018-11-29 2019-11-26 清华大学深圳研究生院 二次电喷雾离子源装置及质谱检测设备
US11705321B2 (en) * 2019-06-12 2023-07-18 Topanga Asia Limited Electrodeless plasma lamps, transmission lines and radio frequency systems
CN110444463B (zh) * 2019-08-12 2020-11-10 电子科技大学 一种微电流铯离子源
US11170973B2 (en) 2019-10-09 2021-11-09 Applied Materials, Inc. Temperature control for insertable target holder for solid dopant materials
US11289299B2 (en) 2019-10-24 2022-03-29 Arizona Board Of Regents On Behalf Of Arizona State University Duoplasmatron ion source with a partially ferromagnetic anode
US10957509B1 (en) * 2019-11-07 2021-03-23 Applied Materials, Inc. Insertable target holder for improved stability and performance for solid dopant materials
CN110967962B (zh) * 2019-11-26 2021-04-06 北京无线电计量测试研究所 一种铯炉的电击穿系统和方法
US11031205B1 (en) * 2020-02-04 2021-06-08 Georg-August-Universität Göttingen Stiftung Öffentlichen Rechts, Universitätsmedizin Device for generating negative ions by impinging positive ions on a target
US11854760B2 (en) 2021-06-21 2023-12-26 Applied Materials, Inc. Crucible design for liquid metal in an ion source

Citations (11)

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US3967115A (en) * 1974-10-09 1976-06-29 Frequency & Time Systems, Inc. Atomic beam tube
JPS5465482A (en) * 1977-11-02 1979-05-26 Fujitsu Ltd Particle beam device
JPS5966031A (ja) * 1982-10-07 1984-04-14 Ulvac Corp 高輝度表面電離型イオン源およびその製造法
US4488045A (en) * 1981-09-03 1984-12-11 Jeol Ltd. Metal ion source
US4617203A (en) * 1985-04-08 1986-10-14 Hughes Aircraft Company Preparation of liquid metal source structures for use in ion beam evaporation of boron-containing alloys
US4886966A (en) * 1988-01-07 1989-12-12 Kabushiki Kaisha Toshiba Apparatus for introducing samples into an inductively coupled, plasma source mass spectrometer
US4983845A (en) * 1987-11-19 1991-01-08 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften V.V. Apparatus operating with contact ionization for the production of a beam of accelerated ions
CN1828818A (zh) * 2004-10-15 2006-09-06 安捷伦科技有限公司 用于增强离子产生的装置和方法
CN200997383Y (zh) * 2006-06-20 2007-12-26 周振 大气压离子源接口
CN201465988U (zh) * 2009-06-04 2010-05-12 北京大学 质谱离子传输管外延长接口装置
CN203631482U (zh) * 2013-12-09 2014-06-04 中芯国际集成电路制造(北京)有限公司 离子源及离子注入机

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JPS5069571U (enExample) * 1973-10-25 1975-06-20
JPS5794159U (enExample) * 1980-12-01 1982-06-10
JPS58192249A (ja) * 1982-05-07 1983-11-09 Hitachi Ltd 高周波誘導加熱型液体金属イオン源
US4791273A (en) * 1987-05-15 1988-12-13 Varian Associates, Inc. Vaporizer system for ion source
IT1238337B (it) * 1990-01-23 1993-07-12 Cons Ric Microelettronica Dispositivo per la ionizzazione di metalli ad alta temperatura di fusione, utilizzabile su impiantatori ionici del tipo impiegante sorgenti di ioni di tipo freeman o assimilabili
FR2722333B1 (fr) * 1994-07-07 1996-09-13 Rech Scient Snrs Centre Nat De Source d'ions de metaux liquides
AU2002950505A0 (en) * 2002-07-31 2002-09-12 Varian Australia Pty Ltd Mass spectrometry apparatus and method
JP4177645B2 (ja) * 2002-11-14 2008-11-05 エスアイアイ・ナノテクノロジー株式会社 マイクロキャピラリー型Ｇａ液体金属イオン源
JP2004281213A (ja) * 2003-03-14 2004-10-07 Nec Kyushu Ltd イオン源用オーブン
JP4359131B2 (ja) * 2003-12-08 2009-11-04 株式会社日立ハイテクノロジーズ 液体金属イオン銃、及びイオンビーム装置
US7235796B2 (en) * 2004-11-24 2007-06-26 Technion Research & Development Foundation Ltd. Method and apparatus for the generation of anionic and neutral particulate beams and a system using same
EP1979925A2 (en) * 2006-01-13 2008-10-15 Technion Research And Development Foundation, Ltd. Method and apparatus for generating ion beam
JP5296341B2 (ja) * 2006-07-14 2013-09-25 ティーイーエル・エピオン・インコーポレーテッド ガスクラスターイオンビーム加工装置における粒子汚染を低減するための装置および方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3967115A (en) * 1974-10-09 1976-06-29 Frequency & Time Systems, Inc. Atomic beam tube
JPS5465482A (en) * 1977-11-02 1979-05-26 Fujitsu Ltd Particle beam device
US4488045A (en) * 1981-09-03 1984-12-11 Jeol Ltd. Metal ion source
JPS5966031A (ja) * 1982-10-07 1984-04-14 Ulvac Corp 高輝度表面電離型イオン源およびその製造法
US4617203A (en) * 1985-04-08 1986-10-14 Hughes Aircraft Company Preparation of liquid metal source structures for use in ion beam evaporation of boron-containing alloys
US4983845A (en) * 1987-11-19 1991-01-08 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften V.V. Apparatus operating with contact ionization for the production of a beam of accelerated ions
US4886966A (en) * 1988-01-07 1989-12-12 Kabushiki Kaisha Toshiba Apparatus for introducing samples into an inductively coupled, plasma source mass spectrometer
CN1828818A (zh) * 2004-10-15 2006-09-06 安捷伦科技有限公司 用于增强离子产生的装置和方法
CN200997383Y (zh) * 2006-06-20 2007-12-26 周振 大气压离子源接口
CN201465988U (zh) * 2009-06-04 2010-05-12 北京大学 质谱离子传输管外延长接口装置
CN203631482U (zh) * 2013-12-09 2014-06-04 中芯国际集成电路制造(北京)有限公司 离子源及离子注入机

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Title
133型铯离子源;曹永明等;《质谱学报》;19910702;第12卷(第2期);第78-81页 *
A Review of Sputter Negative Ion Sources;Roy Middleton;《IEEE Transactions on Nuclear Science》;19760430;第23卷(第2期);第1098-1103页 *

Also Published As

Publication number Publication date
KR20170117364A (ko) 2017-10-23
CN107210749A (zh) 2017-09-26
US20170309433A1 (en) 2017-10-26
EP3207636A4 (en) 2018-10-31
EP3207636A1 (en) 2017-08-23
EP3207636B1 (en) 2019-12-04
US9941089B2 (en) 2018-04-10
JP2017532744A (ja) 2017-11-02
WO2016061057A1 (en) 2016-04-21
KR102518443B1 (ko) 2023-04-06
JP6879908B2 (ja) 2021-06-02

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