CN107210327A - 光伏模块及用于产生其的方法 - Google Patents

光伏模块及用于产生其的方法 Download PDF

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Publication number
CN107210327A
CN107210327A CN201580065815.0A CN201580065815A CN107210327A CN 107210327 A CN107210327 A CN 107210327A CN 201580065815 A CN201580065815 A CN 201580065815A CN 107210327 A CN107210327 A CN 107210327A
Authority
CN
China
Prior art keywords
contact
photovoltaic
gap
hole
stack
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201580065815.0A
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English (en)
Chinese (zh)
Inventor
O.伦德伯格
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Solibro Res AB
Original Assignee
Solibro Res AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solibro Res AB filed Critical Solibro Res AB
Publication of CN107210327A publication Critical patent/CN107210327A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/35—Structures for the connecting of adjacent photovoltaic cells, e.g. interconnections or insulating spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/137—Batch treatment of the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/955—Circuit arrangements for devices having potential barriers for photovoltaic devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
CN201580065815.0A 2014-12-03 2015-11-27 光伏模块及用于产生其的方法 Pending CN107210327A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE1451472A SE538695C2 (en) 2014-12-03 2014-12-03 A photovoltaic module and a method for producing the same
SE1451472-3 2014-12-03
PCT/EP2015/077941 WO2016087330A1 (en) 2014-12-03 2015-11-27 A photovoltaic module and a method for producing the same

Publications (1)

Publication Number Publication Date
CN107210327A true CN107210327A (zh) 2017-09-26

Family

ID=54705633

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580065815.0A Pending CN107210327A (zh) 2014-12-03 2015-11-27 光伏模块及用于产生其的方法

Country Status (7)

Country Link
US (1) US20170330984A1 (enExample)
EP (1) EP3227927A1 (enExample)
JP (1) JP2017536705A (enExample)
CN (1) CN107210327A (enExample)
BR (1) BR112017011710A2 (enExample)
SE (1) SE538695C2 (enExample)
WO (1) WO2016087330A1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110071186A (zh) * 2019-04-28 2019-07-30 西安富阎移动能源有限公司 一种薄膜光伏组件内联结构及生产工艺
CN112531038A (zh) * 2020-11-06 2021-03-19 凯盛光伏材料有限公司 一种薄膜双玻光伏组件及其制备方法
CN112885905A (zh) * 2021-01-29 2021-06-01 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) 太阳能电池及其制备方法、太阳能电池组件
CN113488593A (zh) * 2021-06-01 2021-10-08 位速科技股份有限公司 薄膜光伏结构
TWI774397B (zh) * 2021-05-28 2022-08-11 位速科技股份有限公司 薄膜光伏結構

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140045293A1 (en) * 2012-08-07 2014-02-13 Pu Ni Tai Yang Neng (Hangzhou) Co., Limited Fabrication of interconnected thin-film concentrator cells using shadow masks
CN103988317A (zh) * 2011-10-11 2014-08-13 Lg伊诺特有限公司 太阳能电池及太阳能电池模块

Family Cites Families (9)

* Cited by examiner, † Cited by third party
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US8927315B1 (en) * 2005-01-20 2015-01-06 Aeris Capital Sustainable Ip Ltd. High-throughput assembly of series interconnected solar cells
ATE543219T1 (de) 2006-06-13 2012-02-15 Miasole Fotovoltaikmodul mit integrierter stromabnahme und zwischenverbindung
US20100229914A1 (en) * 2008-06-04 2010-09-16 Solexant Corp. Solar cells with shunt resistance
CN102272938B (zh) 2009-01-29 2013-10-09 京瓷株式会社 光电转换元件、光电转换模块及光电转换元件的制造方法
US20120094425A1 (en) * 2010-10-14 2012-04-19 Miasole Ablative scribing of solar cell structures
JP5990829B2 (ja) * 2011-10-14 2016-09-14 学校法人立命館 薄膜太陽電池、及びその製造方法
AU2013255707A1 (en) * 2012-05-03 2014-11-13 Nexcis Laser etching a stack of thin layers for a connection of a photovoltaic cell
JP2014006208A (ja) * 2012-06-27 2014-01-16 Nippon Dempa Kogyo Co Ltd 感知方法
KR101382880B1 (ko) * 2012-07-31 2014-04-09 엘지이노텍 주식회사 태양광 발전장치 및 이의 제조방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103988317A (zh) * 2011-10-11 2014-08-13 Lg伊诺特有限公司 太阳能电池及太阳能电池模块
US20140045293A1 (en) * 2012-08-07 2014-02-13 Pu Ni Tai Yang Neng (Hangzhou) Co., Limited Fabrication of interconnected thin-film concentrator cells using shadow masks

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110071186A (zh) * 2019-04-28 2019-07-30 西安富阎移动能源有限公司 一种薄膜光伏组件内联结构及生产工艺
CN110071186B (zh) * 2019-04-28 2020-11-20 西安富阎移动能源有限公司 一种薄膜光伏组件内联结构及生产工艺
CN112531038A (zh) * 2020-11-06 2021-03-19 凯盛光伏材料有限公司 一种薄膜双玻光伏组件及其制备方法
CN112885905A (zh) * 2021-01-29 2021-06-01 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) 太阳能电池及其制备方法、太阳能电池组件
TWI774397B (zh) * 2021-05-28 2022-08-11 位速科技股份有限公司 薄膜光伏結構
CN113488593A (zh) * 2021-06-01 2021-10-08 位速科技股份有限公司 薄膜光伏结构
CN113488593B (zh) * 2021-06-01 2023-11-14 位速科技股份有限公司 薄膜光伏结构

Also Published As

Publication number Publication date
JP2017536705A (ja) 2017-12-07
SE1451472A1 (sv) 2016-06-04
SE538695C2 (en) 2016-10-18
WO2016087330A1 (en) 2016-06-09
BR112017011710A2 (pt) 2017-12-26
US20170330984A1 (en) 2017-11-16
EP3227927A1 (en) 2017-10-11

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Application publication date: 20170926