CN107210062B - 用于铁电存储器中的数据感测的参考电压的设置 - Google Patents

用于铁电存储器中的数据感测的参考电压的设置 Download PDF

Info

Publication number
CN107210062B
CN107210062B CN201680006960.6A CN201680006960A CN107210062B CN 107210062 B CN107210062 B CN 107210062B CN 201680006960 A CN201680006960 A CN 201680006960A CN 107210062 B CN107210062 B CN 107210062B
Authority
CN
China
Prior art keywords
reference voltage
ferroelectric memory
voltage
data state
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201680006960.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN107210062A (zh
Inventor
C·Z·周
K·A·瑞麦克
J·A·罗德里格斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of CN107210062A publication Critical patent/CN107210062A/zh
Application granted granted Critical
Publication of CN107210062B publication Critical patent/CN107210062B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50016—Marginal testing, e.g. race, voltage or current testing of retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2273—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2275—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
CN201680006960.6A 2015-02-17 2016-02-16 用于铁电存储器中的数据感测的参考电压的设置 Active CN107210062B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562116977P 2015-02-17 2015-02-17
US62/116,977 2015-02-17
US15/019,026 2016-02-09
US15/019,026 US9767879B2 (en) 2015-02-17 2016-02-09 Setting of reference voltage for data sensing in ferroelectric memories
PCT/US2016/018011 WO2016133869A1 (en) 2015-02-17 2016-02-16 Setting of reference voltage for data sensing in ferroelectric memories

Publications (2)

Publication Number Publication Date
CN107210062A CN107210062A (zh) 2017-09-26
CN107210062B true CN107210062B (zh) 2020-11-10

Family

ID=56622245

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680006960.6A Active CN107210062B (zh) 2015-02-17 2016-02-16 用于铁电存储器中的数据感测的参考电压的设置

Country Status (4)

Country Link
US (2) US9767879B2 (enExample)
JP (1) JP6769975B2 (enExample)
CN (1) CN107210062B (enExample)
WO (1) WO2016133869A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9767879B2 (en) * 2015-02-17 2017-09-19 Texas Instruments Incorporated Setting of reference voltage for data sensing in ferroelectric memories
US10290341B2 (en) 2017-02-24 2019-05-14 Micron Technology, Inc. Self-reference for ferroelectric memory
CN108072367B (zh) * 2017-12-27 2021-02-23 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） 一种准确锁定激光陀螺工作模式的方法
US10847201B2 (en) * 2019-02-27 2020-11-24 Kepler Computing Inc. High-density low voltage non-volatile differential memory bit-cell with shared plate line
WO2020251854A1 (en) * 2019-06-14 2020-12-17 Cummins Inc. Methods and devices for determining battery state of health using incremental capacity analysis and support vector regression
EP4082015A4 (en) * 2019-12-23 2023-07-19 Micron Technology, Inc. COUNTER-BASED READING IN A MEMORY DEVICE
TW202236266A (zh) 2019-12-23 2022-09-16 美商美光科技公司 在記憶體裝置中基於計數器之讀取
US11081204B1 (en) * 2020-06-22 2021-08-03 Micron Technology, Inc. Method for setting a reference voltage for read operations
US11587603B2 (en) 2020-09-30 2023-02-21 Infineon Technologies LLC Local reference voltage generator for non-volatile memory
CN117542388A (zh) * 2022-08-02 2024-02-09 华为技术有限公司 集成电路及其控制方法、芯片、终端

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW412746B (en) * 1997-12-24 2000-11-21 Hyundai Electronics Ind A reference voltage generator for a ferroelectric material memory device
TW514918B (en) * 2000-11-17 2002-12-21 Macronix Int Co Ltd Method and structure for sensing the polarity of ferro-electric capacitor in the ferro-electric memory
JP3599291B2 (ja) * 1994-01-18 2004-12-08 ローム株式会社 不揮発性メモリ
CN1574073A (zh) * 2003-05-23 2005-02-02 海力士半导体有限公司 具有多位控制功能的非易失性铁电存储器件
CN1620698A (zh) * 2001-12-13 2005-05-25 米克伦技术公司 抑制存储器电容结构印记的系统和方法
CN1637929A (zh) * 2003-12-22 2005-07-13 三星电子株式会社 铁电体随机存取存储器器件和驱动方法
CN1666293A (zh) * 2002-05-06 2005-09-07 塞姆特里克斯公司 铁电存储器
TWI269296B (en) * 2002-02-25 2006-12-21 Fujitsu Ltd Semiconductor memory

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0293798B2 (en) * 1987-06-02 1998-12-30 National Semiconductor Corporation Non-volatile memory ciruit using ferroelectric capacitor storage element
JPH09134594A (ja) * 1995-11-08 1997-05-20 Hitachi Ltd 半導体不揮発メモリ
EP1128391A1 (en) * 2000-02-22 2001-08-29 STMicroelectronics S.r.l. A method and a circuit architecture for testing an integrated circuit comprising a programmable, non-volatile memory
JP2002216498A (ja) * 2001-01-18 2002-08-02 Rohm Co Ltd 強誘電体記憶装置
JP2004139632A (ja) * 2002-10-15 2004-05-13 Toshiba Corp 強誘電体メモリ
KR100506450B1 (ko) * 2003-01-24 2005-08-05 주식회사 하이닉스반도체 불휘발성 강유전체 메모리를 이용한 테스트 모드 제어 장치
US6804141B1 (en) * 2003-05-20 2004-10-12 Agilent Technologies, Inc. Dynamic reference voltage calibration integrated FeRAMS
US20050063212A1 (en) * 2003-09-18 2005-03-24 Michael Jacob Reference circuit implemented to reduce the degradation of reference capacitors providing reference voltages for 1T1C FeRAM devices
US20050251617A1 (en) * 2004-05-07 2005-11-10 Sinclair Alan W Hybrid non-volatile memory system
JP2005285190A (ja) * 2004-03-29 2005-10-13 Sanyo Electric Co Ltd メモリ
US7149137B2 (en) 2004-12-30 2006-12-12 Texas Instruments Incorporated Process monitoring for ferroelectric memory devices with in-line retention test
US8036013B2 (en) * 2005-03-30 2011-10-11 Ovonyx, Inc. Using higher current to read a triggered phase change memory
US7667997B2 (en) 2007-12-27 2010-02-23 Texas Instruments Incorporated Method to improve ferroelectronic memory performance and reliability
US7813193B2 (en) 2008-06-19 2010-10-12 Texas Instruments Incorporated Ferroelectric memory brake for screening and repairing bits
KR20130021199A (ko) * 2011-08-22 2013-03-05 삼성전자주식회사 비휘발성 메모리 소자 및 그 구동 방법
KR101892038B1 (ko) * 2012-01-30 2018-08-27 삼성전자주식회사 비휘발성 메모리 장치의 데이터 독출 방법
US20140029326A1 (en) 2012-07-26 2014-01-30 Texas Instruments Incorporated Ferroelectric random access memory with a non-destructive read
US8787057B2 (en) * 2012-08-15 2014-07-22 Apple Inc. Fast analog memory cell readout using modified bit-line charging configurations
KR101934892B1 (ko) * 2012-10-17 2019-01-04 삼성전자 주식회사 메모리 장치의 열화 상태 판정 방법 및 이를 이용한 메모리 시스템
US9378814B2 (en) * 2013-05-21 2016-06-28 Sandisk Technologies Inc. Sense amplifier local feedback to control bit line voltage
US8953373B1 (en) * 2013-10-03 2015-02-10 Lsi Corporation Flash memory read retry using histograms
KR102157875B1 (ko) * 2013-12-19 2020-09-22 삼성전자주식회사 불휘발성 메모리 장치 및 그것을 포함한 메모리 시스템
KR102187485B1 (ko) * 2014-02-21 2020-12-08 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 센싱 방법
KR102187116B1 (ko) * 2014-04-07 2020-12-04 삼성전자주식회사 비휘발성 메모리 장치와 이를 포함하는 메모리 시스템, 및 비휘발성 메모리 장치의 구동 방법
US9607717B2 (en) * 2014-06-06 2017-03-28 Texas Instruments Incorporated Reliability screening of ferroelectric memories in integrated circuits
KR102397016B1 (ko) * 2014-11-24 2022-05-13 삼성전자주식회사 불휘발성 메모리 시스템의 동작 방법
US9767879B2 (en) * 2015-02-17 2017-09-19 Texas Instruments Incorporated Setting of reference voltage for data sensing in ferroelectric memories
US9923140B2 (en) * 2016-04-20 2018-03-20 Sandisk Technologies Llc Low power barrier modulated cell for storage class memory

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3599291B2 (ja) * 1994-01-18 2004-12-08 ローム株式会社 不揮発性メモリ
TW412746B (en) * 1997-12-24 2000-11-21 Hyundai Electronics Ind A reference voltage generator for a ferroelectric material memory device
TW514918B (en) * 2000-11-17 2002-12-21 Macronix Int Co Ltd Method and structure for sensing the polarity of ferro-electric capacitor in the ferro-electric memory
CN1620698A (zh) * 2001-12-13 2005-05-25 米克伦技术公司 抑制存储器电容结构印记的系统和方法
TWI269296B (en) * 2002-02-25 2006-12-21 Fujitsu Ltd Semiconductor memory
CN1666293A (zh) * 2002-05-06 2005-09-07 塞姆特里克斯公司 铁电存储器
CN1574073A (zh) * 2003-05-23 2005-02-02 海力士半导体有限公司 具有多位控制功能的非易失性铁电存储器件
CN1637929A (zh) * 2003-12-22 2005-07-13 三星电子株式会社 铁电体随机存取存储器器件和驱动方法

Also Published As

Publication number Publication date
WO2016133869A1 (en) 2016-08-25
US20170345478A1 (en) 2017-11-30
US20160240238A1 (en) 2016-08-18
CN107210062A (zh) 2017-09-26
US9767879B2 (en) 2017-09-19
JP2018514891A (ja) 2018-06-07
JP6769975B2 (ja) 2020-10-14
US10573367B2 (en) 2020-02-25

Similar Documents

Publication Publication Date Title
CN107210062B (zh) 用于铁电存储器中的数据感测的参考电压的设置
US10332596B2 (en) 2T1C ferro-electric random access memory cell
US10553301B2 (en) Dynamic read table block filter
US10290362B2 (en) Screening for data retention loss in ferroelectric memories
US8472236B2 (en) Differential plate line screen test for ferroelectric latch circuits
US20140169095A1 (en) Select Transistor Tuning
WO2014176050A2 (en) Defective block management
US9251912B2 (en) Semiconductor memory device and method of wafer burn-in test for the same
US6754094B2 (en) Circuit and method for testing a ferroelectric memory device
US9607717B2 (en) Reliability screening of ferroelectric memories in integrated circuits
US9552880B2 (en) Screening for later life stuck bits in ferroelectric memories
US6584009B1 (en) Memory integrated circuit with improved reliability
US12293782B2 (en) Convertible memory device
TWI622997B (zh) 記憶體裝置、系統及其操作方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant