CN107146859B - 一种薄膜制作方法及系统 - Google Patents
一种薄膜制作方法及系统 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 118
- 239000002904 solvent Substances 0.000 claims abstract description 82
- 238000000034 method Methods 0.000 claims abstract description 28
- 230000002093 peripheral effect Effects 0.000 claims abstract description 17
- 239000010408 film Substances 0.000 claims description 70
- 230000008569 process Effects 0.000 claims description 25
- 238000010438 heat treatment Methods 0.000 claims description 24
- 239000010409 thin film Substances 0.000 claims description 24
- 239000007788 liquid Substances 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 238000001035 drying Methods 0.000 claims description 10
- 238000007639 printing Methods 0.000 claims description 9
- 238000007641 inkjet printing Methods 0.000 claims description 8
- 238000009434 installation Methods 0.000 claims description 8
- 238000007664 blowing Methods 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 238000004090 dissolution Methods 0.000 claims description 2
- 238000005086 pumping Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 98
- 239000007789 gas Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 7
- 230000009286 beneficial effect Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 206010011224 Cough Diseases 0.000 description 1
- 206010027146 Melanoderma Diseases 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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Abstract
本发明公开一种薄膜制作方法及系统,涉及薄膜制作技术领域,为提高制得薄膜的厚度均匀性。所述薄膜制作方法包括:在衬底基板形成覆盖衬底基板表面的油墨层,向油墨层吹气,使得油墨层中的溶剂向衬底基板四周区域展开;去除油墨层中的溶剂,使得油墨层中的成膜材料形成覆盖在衬底基板表面的薄膜。所述薄膜制作系统包括上述技术方案所提的薄膜制作方法。本发明提供的薄膜制作方法用于制作薄膜。
Description
技术领域
本发明涉及薄膜制作技术领域,尤其涉及一种薄膜制作方法及系统。
背景技术
有机发光二极管(Organic Light Emitting Diode,缩写为OLED)显示装置因具有自发光、反应快、视角广、亮度高和色彩艳等优点而被广泛应用于显示技术中。
OLED显示装置包括依次形成于衬底基板上的阳极、有机功能层和阴极,其中,有机功能层需要通过薄膜制备工艺进行,在各种成膜工艺中,首先需将作为溶质的有机功能层材料与溶剂混合,并将混合后的液体涂覆在衬底基板上,继而对涂覆后的衬底基板进行干燥,以得到沉积在衬底基板上由有机功能层材料组成的薄膜。但是,在上述干燥过程中,由于位于衬底基板中间的液体被位于衬底基板边缘的液体所包围,导致位于衬底基板中间的液体的溶剂挥发速率小于位于衬底基板边缘的溶剂挥发速率,出现干燥后衬底基板表面薄膜厚度不均匀的问题,而薄膜厚度的均匀性对OLED显示器的显示品质有着重要影响,厚度不均将影响OLED显示器的亮度、光色甚至寿命。
发明内容
本发明的目的在于提供一种薄膜制作方法及系统,用于提高制得薄膜的厚度均匀性。
为了实现上述目的,本发明提供如下技术方案:
一种薄膜制作方法,包括:
在衬底基板形成覆盖衬底基板表面的油墨层,油墨层包括溶剂和溶解在溶剂中的成膜材料;
向油墨层吹气,使得油墨层中的溶剂向衬底基板四周区域展开;
去除油墨层中的溶剂,使得油墨层中的成膜材料形成覆盖在衬底基板表面的薄膜。
与现有技术相比,本发明提供的薄膜制作方法,首先在衬底基板形成覆盖衬底基板表面的油墨层,然后向油墨层吹气,使得油墨层中的溶剂向衬底基板四周区域展开,这样就避免出现衬底基板表面部分区域的油墨层被四周区域的油墨层包围的现象,使得衬底基板表面各区域的油墨层中溶剂的挥发不受阻碍,从而使衬底基板表面各区域油墨层中的溶剂挥发速率趋于一致,保证了在溶剂挥发完毕后,在衬底基板表面形成厚度均匀的薄膜。
本发明还提供一种薄膜制作系统,包括打印装置、吹气装置和干燥装置,其中,打印装置用于在衬底基板形成覆盖衬底基板表面的油墨层,油墨层包括溶剂和溶解在溶剂中的成膜材料;
吹气装置用于向油墨层吹气,使得油墨层中的溶剂向衬底基板四周区域展开;
干燥装置用于去除油墨层中的溶剂,使得油墨层中的成膜材料形成覆盖在衬底基板表面的薄膜。
与现有技术相比,本发明提供的薄膜制作系统的有益效果与上述薄膜制作方法的有益效果相同,在此不再赘述。
附图说明
此处所说明的附图用来提供对本发明的进一步理解,构成本发明的一部分,本发明的示意性实施例及其说明用于解释本发明,并不构成对本发明的不当限定。在附图中:
图1为本发明实施例一提供的薄膜制作方法流程图一;
图2为本发明实施例一提供的薄膜制作方法流程图二;
图3为本发明实施例二提供的薄膜制作系统的示意图。
附图标记:
1-吹气装置, 2-衬底基板;
3-油墨层, 4-薄膜制程腔室。
具体实施方式
为了进一步说明本发明实施例提供的薄膜制作方法及系统,下面结合说明书附图进行详细描述。
实施例一
请参阅图1,本实施例提供的薄膜制作方法,包括:
S100:在衬底基板形成覆盖衬底基板表面的油墨层,油墨层包括溶剂和溶解在溶剂中的成膜材料;
S200:向油墨层吹气,使得油墨层中的溶剂向衬底基板四周区域展开;
S300:去除油墨层中的溶剂,使得油墨层中的成膜材料形成覆盖在衬底基板表面的薄膜。
通过上述具体实施过程可知,本实施例提供的薄膜制作方法,首先在衬底基板形成覆盖衬底基板表面的油墨层,然后向油墨层吹气,使得油墨层中的溶剂向衬底基板四周区域展开,这样就避免出现衬底基板表面部分区域的油墨层被四周区域的油墨层包围的现象,使得衬底基板表面各区域的油墨层中溶剂的挥发不受阻碍,从而使衬底基板表面各位置油墨层中的溶剂挥发速率趋于一致,保证了在溶剂挥发完毕后,在衬底基板表面形成厚度均匀的薄膜。
需要注意的是,上述油墨层的粘度为1cP~20cP,在此范围内可以确保油墨层有较好的流变特性,并使得油墨层在衬底基板上能够均匀铺展,有助于在衬底基板表面形成厚度均匀的薄膜,例如,油墨层中的溶剂可以选用浓度为80%~90%的二甘醇一丁醚,成膜材料可以选用聚(3,4-乙烯二氧噻吩)-聚苯乙烯磺酸(PEDOT/PSS)或聚噻吩或聚苯胺或聚吡咯,其中溶剂在油墨层中的质量分数为95%~98%,成膜材料在油墨层中的质量分数为0.5%~5%。
示例性的,上述薄膜可以用作OLED的空穴注入层、空穴传输层、有机发光层中的一种或多种,当然,本实施例提供的薄膜制作方法同样适用于其他薄膜的制作工艺,本实施例对此不作限定。
值得注意的是,如图2所示,上述S100,在衬底基板形成覆盖衬底基板表面的油墨层,包括:
S101:通过喷墨打印的方式在衬底基板形成覆盖在衬底基板表面的油墨层;本实施例首先将成膜材料溶解在溶质中形成油墨,然后通过喷墨打印的方式,利用多个喷嘴将油墨喷涂在衬底基板上,与传统真空蒸镀法相比,减少了成膜材料的浪费,提高了成膜材料的利用率。
另外,上述S200,向油墨层吹气,使得油墨层中的溶剂向衬底基板四周区域展开,包括:
S210:向油墨层吹气,使得油墨层中的溶剂从衬底基板的几何中心向衬底基板四周区域展开。在本实施例提供的薄膜制作方法中,因为油墨层中的溶剂是从衬底基板的几何中心向外展开的,这样就保证了在溶剂的展开过程中,在距衬底基板几何中心距离相等的区域的油墨层中的溶剂同步移动,从而保证了吹气完毕后,衬底基板表面的油墨层中的溶剂含量以衬底基板的几何中心为圆心均匀递减,从而在后续去除溶剂时,使几何中心区域的油墨层中的溶剂的去除不受阻碍,也就是说,使衬底基板的几何中心区域的油墨层中的溶剂挥发速率与四周区域的油墨层中的溶剂挥发速率趋于一致,保证了在衬底基板表面形成的薄膜的厚度的均匀性。
值得注意的是,上述S200中,向油墨层吹气时,气体流速为0.1m/s~10m/s,吹气时间为300s~400s;本实施例通过将气体流速控制在0.1m/s~10m/s之间,可以使得油墨层中的溶剂平稳地向衬底基板的四周区域展开,避免出现因为气体流速过快而导致的将油墨层中的成膜材料一并移动的问题,同时也避免出现因为气体流速过小而导致的溶剂难以移动的问题,同时,本实施例提供的薄膜制作方法将吹气时间控制在300s~400s之间,使得油墨层中的溶剂有充足的时间流向衬底基板的四周区域,保证了覆盖衬底基板表面各区域的油墨层的溶剂的挥发不受阻碍,进而使得衬底基板表面各区域的油墨层中的溶剂挥发速率趋于一致,保证了在衬底基板表面形成薄膜的厚度均匀性。
可以理解的是,如图1所示,上述S100在衬底基板形成覆盖衬底基板表面的油墨层之前,本实施提供的薄膜制作方法还包括:
S001:将衬底基板放于薄膜制程腔室中;示例性的,可向薄膜制程腔室中通入干燥氮气或干燥空气,以保证形成在衬底基板表面的油墨层能够避免与水汽接触,这是因为当将上述制得的薄膜应用于OLED的空穴传输层时,水汽会被局限在空穴传输层中,在后续的器件操作过程中形成不发光的黑斑,这将导致制得的OLED显示装置的显示效果变差,所以本实施例通过保证薄膜制程腔室内部为干燥环境,以保证薄膜的制备过程不与水汽接触,从而保证了利用此薄膜制得的OLED的使用寿命。
上述S200向油墨层吹气,使得油墨层中的溶剂向衬底基板四周区域展开之后,上述S300去除油墨层中的溶剂之前,本实施例提供的薄膜制作方法还包括:
S201:抽除薄膜制程腔室中带有溶剂的气体;这样就可以使得薄膜制程腔室中的溶剂减少,从而减少后续去除油墨层中的溶剂的量,另外,本实施例通过抽除薄膜制程腔室中带有溶剂的气体,还能够使薄膜制程腔室中的湿度减小,从而在后续去除油墨层中的溶剂时,能够提高溶剂的去除效率,使得覆盖衬底基板表面的薄膜能够快速形成。
值得注意的是,如图2所示,上述S210抽除薄膜制程腔室中带有溶剂的气体,包括:
S211:在衬底基板的周向设置抽气装置;
S212:利用抽气装置抽除薄膜制程腔室中带有溶剂的气体;本实施例通过在衬底基板的周向设置抽气装置,这样在抽除薄膜制程腔室中带有溶剂的气体时,就可以使覆盖在衬底基板表面的油墨层中的成膜材料在抽气装置的作用下,均匀铺展在衬底基板表面,并经后续去除溶剂的步骤,在衬底基板表面形成厚度更加均匀的薄膜。
请继续参阅图2,上述S300去除油墨层中的溶剂,使得油墨层中的成膜材料形成覆盖在衬底基板表面的薄膜,包括:
S310:通过热板加热油墨层、热风加热油墨层、微波加热油墨层或红外线加热油墨层,使得油墨层中的成膜材料形成覆盖在衬底基板表面的薄膜溶剂;本实施例通过热板加热、热风加热、微波加热油墨层或红外线加热油墨层,使得油墨层中的溶剂挥发,从而使得油墨层中的成膜材料形成覆盖在衬底基板表面的薄膜,示例性的,加热温度可保持在20℃~60℃,并且,为了提高溶剂的挥发效率,本实施还可在S310的进行过程中,继续对薄膜制程腔室进行抽气,以及时的将加热过程中溶剂挥发产生的气体抽除,示例性的,加热完毕后,薄膜制程腔室内的压力保持在10-6torr左右。
实施例二
如图3所示,本实施例提供一种薄膜制作系统,包括打印装置、吹气装置1和干燥装置,其中,打印装置用于在衬底基板2形成覆盖衬底基板2表面的油墨层3,油墨层3包括溶剂和溶解在溶剂中的成膜材料;
吹气装置1用于向油墨层3吹气,使得油墨层3中的溶剂向衬底基板2四周区域展开;
干燥装置用于去除油墨层3中的溶剂,使得油墨层3中的成膜材料形成覆盖在衬底基板2表面的薄膜。
具体实施时,利用打印装置在衬底基板2形成覆盖衬底基板2表面的油墨层3,然后利用吹气装置1向油墨层3吹气,使得油墨层3中的溶剂向衬底基板2四周区域展开;继而利用干燥装置去除油墨层3中的溶剂,使得油墨层3中的成膜材料形成覆盖在衬底基板2表面的薄膜。
本实施例提供的薄膜制作系统的有益效果与上述实施例一提供的薄膜制作方法的有益效果相同,在此不再赘述。
可以理解的是,上述打印装置为喷墨打印装置,干燥装置包括热板加热装置、热风加热装置、微波加热装置、红外加热装置中的一种或两种以上组合;本实施例首先将成膜材料溶解在溶质中形成油墨,然后通过采用喷墨打印装置,利用喷墨打印装置中的多个喷嘴将油墨喷涂在衬底基板上,与传统的采用真空蒸镀装置相比,减少了成膜材料的浪费,提高了成膜材料的利用率;而且本实施例通过采用热板加热装置、热风加热装置、微波加热装置、红外加热装置中的一种或两种来加热油墨层3,使油墨层3中的溶剂快速挥发,有助于衬底基板表面薄膜的快速形成。
如图3所示,本实施例提供的薄膜制作系统还包括薄膜制程腔室4和抽气装置,示例性的,上述抽气装置为真空泵;其中,抽气装置和衬底基板2位于薄膜制程腔室4中,抽气装置设于衬底基板2的周向,抽气装置用于抽除薄膜制程腔室4中带有溶剂的气体,本实施例通过在衬底基板2的周向设置抽气装置,这样在抽除薄膜制程腔室4中带有溶剂的气体时,就可以使覆盖在衬底基板2表面的油墨层3中的成膜材料在抽气装置的作用下,均匀铺展在衬底基板2表面,并经后续去除溶剂的步骤,在衬底基板2表面形成厚度更加均匀的薄膜。
在上述实施方式的描述中,具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
以上所述,仅为本发明的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本发明的保护范围之内。因此,本发明的保护范围应以所述权利要求的保护范围为准。
Claims (13)
1.一种薄膜制作方法,其特征在于,包括:
通过喷墨打印的方式在衬底基板形成覆盖衬底基板表面的油墨层,所述油墨层包括液态溶剂和溶解在液态溶剂中的成膜材料;
向所述油墨层吹气,使得所述油墨层中的液态溶剂向衬底基板四周区域展开;
去除所述油墨层中的液态溶剂,使得所述油墨层中的成膜材料形成覆盖在衬底基板表面的薄膜。
2.根据权利要求1所述的薄膜制作方法,其特征在于,所述油墨层的粘度为1cP~20cP。
3.根据权利要求1所述的薄膜制作方法,其特征在于,所述向油墨层吹气,使得油墨层中的溶剂向衬底基板四周区域展开,包括:
向所述油墨层吹气,使得所述油墨层中的溶剂从衬底基板的几何中心向衬底基板四周区域展开。
4.根据权利要求1所述的薄膜制作方法,其特征在于,所述在衬底基板形成覆盖衬底基板表面的油墨层,包括:
通过喷墨打印的方式在衬底基板形成覆盖衬底基板表面的油墨层。
5.根据权利要求1所述的薄膜制作方法,其特征在于,所述向油墨层吹气时,气体流速为0.1m/s~10m/s,吹气时间为300s~400s。
6.根据权利要求1所述的薄膜制作方法,其特征在于,所述在衬底基板形成覆盖衬底基板表面的油墨层之前,所述薄膜制作方法还包括:将所述衬底基板放于薄膜制程腔室中;
所述向油墨层吹气,使得油墨层中的溶剂向衬底基板四周区域展开之后,所述去除油墨层中的溶剂之前,所述薄膜制作方法还包括:抽除所述薄膜制程腔室中带有溶剂的气体。
7.根据权利要求6所述的薄膜制作方法,其特征在于,所述抽除薄膜制程腔室中带有溶剂的气体,包括:
在衬底基板的周向设置抽气装置;
利用抽气装置抽除薄膜制程腔室中带有溶剂的气体。
8.根据权利要求1所述的薄膜制作方法,其特征在于,所述去除油墨层中的溶剂,使得所述油墨层中的成膜材料形成覆盖在衬底基板表面的薄膜,包括:
通过热板加热油墨层、热风加热油墨层、微波加热油墨层或红外线加热油墨层,使得所述油墨层中的成膜材料形成覆盖在衬底基板表面的薄膜。
9.一种薄膜制作系统,其特征在于,包括打印装置、吹气装置和干燥装置,其中,所述打印装置用于在衬底基板形成覆盖衬底基板表面的油墨层,所述油墨层包括液态溶剂和溶解在液态溶剂中的成膜材料;
所述吹气装置用于向所述油墨层吹气,使得所述油墨层中的液态溶剂向衬底基板四周区域展开;
所述干燥装置用于去除油墨层中的液态溶剂,使得所述油墨层中的成膜材料形成覆盖在衬底基板表面的薄膜。
10.根据权利要求9所述的薄膜制作系统,其特征在于,所述打印装置为喷墨打印装置。
11.根据权利要求9所述的薄膜制作系统,其特征在于,所述干燥装置包括热板加热装置、热风加热装置、微波加热装置、红外加热装置中的一种或两种以上组合。
12.根据权利要求9所述的薄膜制作系统,其特征在于,还包括薄膜制程腔室和抽气装置,所述抽气装置和所述衬底基板位于所述薄膜制程腔室中,所述抽气装置沿所述衬底基板的周向设置,所述抽气装置用于抽除薄膜制程腔室中带有溶剂的气体。
13.根据权利要求12所述的薄膜制作系统,其特征在于,所述抽气装置为真空泵。
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