CN107112246B - 可烧结的粘合材料及使用所述可烧结的粘合材料的半导体装置 - Google Patents
可烧结的粘合材料及使用所述可烧结的粘合材料的半导体装置 Download PDFInfo
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- CN107112246B CN107112246B CN201480084339.2A CN201480084339A CN107112246B CN 107112246 B CN107112246 B CN 107112246B CN 201480084339 A CN201480084339 A CN 201480084339A CN 107112246 B CN107112246 B CN 107112246B
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Images
Classifications
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Abstract
本发明的目的是提供可烧结性优异的可烧结的粘合材料。本发明涉及包含银填料和作为烧结促进剂的有机碱化合物的可烧结的粘合材料。
Description
技术领域
本发明涉及粘合材料。特别地,本发明涉及包含作为烧结促进剂的有机碱化合物的可烧结的粘合材料,以及所述可烧结的粘合材料的制造方法。本发明还涉及通过使用所述粘合材料制造的半导体装置,以及所述半导体装置的制造方法。
背景技术
由于电子装置的尺寸减小和重量减轻以及其性能改善,半导体装置中产生的热量趋于增加。近年来,在发动机控制领域中,已经开发出具有大带隙的功率半导体(例如碳化硅或氮化镓)用于其中需要高电压或高电流的应用,例如电气功率装置、载运工具或机械工具。相较于传统的硅半导体,这样的功率半导体可以在更高的温度下操作,因为半导体元件本身具有高耐热性。
为了利用功率半导体的这样的特性,需要具有优异导热率的粘合材料。近年来,已研究出包含纳米尺寸的金属微粒的膏体作为具有高导热率的粘合材料。在使用上述膏体的粘合方法中,利用金属颗粒的烧结现象进行粘合。
对于利用金属烧结的粘合方法,已经出现多种多样的研究。例如,专利文献2公开了包含载体的烧结预成形物(sintering preform),所述载体的表面具有至少一个包含硬化膏体的结构元件,其中所述硬化膏体包含(a)具有涂层的金属颗粒,所述涂层包含至少一种有机化合物;和(b)至少一种烧结助剂。专利文献2阐述了烧结助剂能够确保在烧结过程中涂层化合物被烧掉,并且公开了(b1)有机过氧化物、(b2)无机过氧化物、(b3)无机酸、(b4)有机酸的盐、(b5)有机酸的酯以及(b6)羰基络合物作为烧结助剂。
引用文献清单
利文献
专利文献1:日本专利特开(Laid-Open)第2006-352080号
专利文献2:日本专利特开第2012-60114号
发明内容
技术问题
然而,鉴于它们对粘合材料的可烧结性的效果,在上述专利文献2中公开的烧结助剂仍是不足的,并且需要进一步改进。
据此,本发明的一个目的是提供可烧结性优异的粘合材料,由此提供具有改进的导热率的粘合层。
解决技术问题的技术方案
本发明的一方面涉及包含银填料和作为烧结促进剂的有机碱化合物的可烧结的粘合材料。
本发明的有益效果
本发明可以提供可烧结性优异的粘合材料。
附图说明
[图1]图1是根据本发明的一实施方案的半导体装置的部分横截面图。
[图2]图2是实施例中的粘合材料的DSC图。
具体实施方式
<烧结促进剂>
根据本发明的粘合材料包含银填料和作为烧结促进剂的有机碱化合物。
作为烧结促进剂的有机碱化合物优选为含氮的碱性化合物。含氮的碱性化合物的实例包括非环状胺化合物、含氮的杂环化合物、磷腈化合物等,并且含氮的杂环化合物为优选的。
非环状胺化合物的实例包括烷基胺、氨基醇和亚烷基二胺。非环状胺化合物优选具有1至15个碳原子,更优选1至10个碳原子。烷基胺包括单-、二-或三-烷基胺,优选为三烷基胺。三烷基胺的实例包括三甲基胺、三乙基胺、二异丙基乙基胺、三丁基胺等。氨基醇的实例包括单-、二-或三-醇胺,例如单乙醇胺、二乙醇胺、三乙醇胺、2-氨基-2-甲基-1-丙醇、二异丙醇胺以及三异丙醇胺。亚烷基二胺的实例包括亚乙基二胺、六亚甲基二胺等。
含氮的杂环化合物的实例包括非芳族环状胺化合物、含氮的芳族杂环化合物、含氮的多环杂环化合物等。
非芳族环状胺化合物的实例包括环状仲胺化合物,例如乙烯亚胺(或氮丙啶)、吡咯烷、哌啶和吗啉;以及环状叔胺化合物,例如1,4-二氮杂双环[2.2.2]辛烷(DABCO)、N-甲基吡咯烷和N-甲基吗啉。
含氮的芳族杂环化合物的实例包括基于吡啶的化合物,例如吡啶、甲基吡啶、2,6-二甲基吡啶、三甲基吡啶(colidine)和二甲基氨基吡啶(DMAP);基于咪唑的化合物;基于三唑的化合物,例如1,2,3-三唑、1,2,4-三唑和苯并三唑;联吡啶化合物,例如2,2’-联吡啶和4,4’-联吡啶;嘧啶碱;嘌呤碱;以及基于三嗪的化合物。含氮的芳族杂环化合物优选具有五元环或六元环作为含氮的部分。在这些化合物之中,基于咪唑的化合物为优选的。
基于咪唑的化合物的实例可以包括,但不限于,咪唑和苯并咪唑。基于咪唑的化合物可以具有至少一个取代基,其实例包括具有1至4个碳原子的烷基、羟基、氨基、苯基等。取代基优选为甲基或乙基,且更优选为甲基。
含氮的多环杂环化合物的实例可以包括1,8-二氮杂双环[5.4.0]-7-十一烯(DBU)、1,5-二氮杂双环[4.3.0]-5-壬烯(DBN)、7-甲基-1,5,7-三氮杂双环[4.4.0]癸-5-烯(MTBD)、1,5,7-三氮杂双环[4.4.0]癸-5-烯(TBD)等。
磷腈化合物的实例包括,但不限于,磷腈类,例如BEMP(2-叔丁基亚氨基-2-二乙基氨基-1,3-二甲基全氢-1,3,2-二氮杂膦杂苯)、tBu-P1(叔丁基亚氨基-三(二甲基氨基)正膦)、tBu-P1-t(叔丁基亚氨基-三(吡咯烷基)正膦)、Et-P2(1-乙基-2,2,4,4,4-五(二甲基氨基)-2λ5,4λ5-链二(磷腈))、tBu-P4(1-叔丁基-4,4,4-三(二甲基氨基)-2,2-双[三(二甲基氨基)-正膦亚基氨基]-2λ5,4λ5-链二(磷腈))等。
在一实施方案中,含氮的杂环化合物优选为分子中具有2个以上氮原子的化合物,其实例可以包括具有脒部分和/或胍部分的化合物。在此,脒部分是这样的结构,其中两个氮原子以一个单键和一个双键分别键合至一个碳原子。胍部分是这样的结构,其中三个氮原子以两个单键和一个双键分别键合至一个碳原子。这样的化合物的实例包括基于咪唑的化合物、DBU、DBN、MTBD、TBD等。
在一实施方案中,本发明有机碱化合物的共轭酸的pKa优选为6.0以上,且更优选为7.0以上。而且,可以优选使用具有较高碱性的化合物。在这样的实施方案中,其共轭酸的pKa优选为9.0以上,更优选为10.0以上,最优选为11.0以上。本文中,共轭酸的pKa是在DMSO中于25℃下测量的数值。共轭酸pKa为7.0以上的化合物的实例包括,但不限于,三乙基胺、吗啉、N-甲基吗啉、咪唑、N-甲基咪唑以及DMAP。共轭酸pKa为11.0以上的化合物的实例包括,但不限于,DBU、DBN、TBD、MTBD以及磷腈化合物。
优选地,有机碱化合物不存在或几乎不存在于烧结产物中。从此角度来看,有机碱化合物的沸点优选不过多地高于本发明的粘合材料的烧结温度,更优选低于所述烧结温度,且还更优选比所述烧结温度低100℃以上。
在一实施方案中,鉴于其对银填料的烧结的效果,基于咪唑的化合物、DBU以及DBN为优选的。
有机碱化合物可单独使用或两种以上组合使用。
基于100质量份的银填料,有机碱化合物的含量优选为0.01至5.0质量份,更优选为0.05至2.0质量份,且还更优选为0.1至1.0质量份。
根据本发明,有机碱化合物可以改进粘合材料的可烧结性。尚未清楚地理解其原因,但假定的是,有机碱化合物用于增加银填料的表面活性。
根据本发明,粘合材料的可烧结性可以得到改进;因此,可以获得具有较低孔隙率的粘合层。粘合层的导热率随着孔隙率的提高而降低。此外,当粘合层的孔隙率过高时,粘合层内空气空间的状态可能在半导体装置的操作期间在尺寸方面改变或成长,特别是在高温(例如200℃以上)下的长期操作期间,这可能不利地损害半导体装置的长期可靠性。根据本发明,使用有机碱化合物作为烧结促进剂,可以获得具有低孔隙率并由此具有优异导热率的粘合层。
<添加剂>
本发明的粘合材料可以包含添加剂与上述有机碱化合物的组合。
非有机碱化合物的添加剂的实例包括能够促进涂覆银填料表面的有机物质的洗脱和/或热分解的组分,例如氧化剂。
氧化剂的实例可包括有机过氧化物、无机过氧化物以及无机酸等。
有机过氧化物为具有过氧化物阴离子O2 2-或过氧化基团-O-O-和至少一个与其直接键合的有机基团的化合物。其实例包括过氧化二异丁酰、过氧化新癸酸异丙苯酯(cumolperoxyneodecanoate)、过氧化新癸酸1,1,3,3-四甲基丁酯、过氧化二碳酸二正丙酯、过氧化新癸酸叔戊酯、过氧化二碳酸二(2-乙基己基)酯、过氧化新癸酸叔丁酯、过氧化二碳酸二正丁酯、过氧化新戊酸1,1,3,3-四甲基丁酯、过氧化新庚酸叔丁酯、过氧化新戊酸叔戊酯、过氧化新戊酸叔丁酯、二(3,5,5-三甲基己酰基)过氧化物、过氧化-2-乙基己酸叔丁酯、过氧化异丁酸叔丁酯、1,1-二(叔丁过氧)-3,3,5-三甲基环己烷、1,1-二(叔丁基过氧)-环己烷、过氧化-3,5,5-三甲基己酸叔丁酯、2,2-二(叔丁基过氧)-丁烷、过氧化异丙基碳酸叔丁酯、过氧化乙酸叔丁酯、2,5-二甲基-2,5-二(2-乙基己酰基过氧)-己烷、过氧化-2-乙基己酸1,1,3,3-四甲基丁酯、过氧化-2-乙基己酸叔戊酯、过氧化二乙基乙酸叔丁酯、过氧化-2-乙基己基碳酸叔戊酯、过氧化-2-乙基己基碳酸叔丁酯、过氧化苯甲酸叔丁酯、二叔戊基过氧化物、2,5-二甲基-2,5-二(叔丁基过氧)-己烷、叔丁基异丙苯基过氧化物、2,5-二甲基-2,5-二(叔丁基过氧)己炔-3、二叔丁基过氧化物(Perbutyl D)、3,6,9-三乙基-3,6,9-三甲基-1,4,7-三过氧壬烷、二-异丙基苯-单-氢过氧化物、对薄荷烷氢过氧化物、异丙苯氢过氧化物、双异丙苯基过氧化物和1,1,3,3-四甲基丁基氢过氧化物。
无机过氧化物为具有过氧化物阴离子O2 2-或过氧化基团-O-O-和直接与其键合的无机基团的化合物。其实例包括过氧化氢、铵过氧化物(ammonium peroxide)、一甲基铵过氧化物、二甲基铵过氧化物、三甲基铵过氧化物、一乙基铵过氧化物、二乙基铵过氧化物、三乙基铵过氧化物、一丙基铵过氧化物、二丙基铵过氧化物、三丙基铵过氧化物、一异丙基铵过氧化物、二异丙基铵过氧化物、三异丙基铵过氧化物、一丁基铵过氧化物、二丁基铵过氧化物、三丁基铵过氧化物、过氧化锂、过氧化钠、过氧化钾、过氧化镁、过氧化钙、过氧化钡、过硼酸铵、过硼酸锂、过硼酸钾以及过硼酸钠。
在本发明中,有机过氧化物和无机过氧化物优选具有200℃以下的分解温度(1小时半衰期温度)。
无机酸的实例包括磷酸(phosphate)化合物,例如正磷酸、焦磷酸(pyrophoricacid)、偏磷酸和多磷酸。
可存在于银填料的表面上的促进氧化银还原的组分也优选用作添加剂。
促进氧化银还原的组分的实例包括醇化合物和羧酸化合物。醇化合物的实例可以包括多元醇,例如柠檬酸、抗坏血酸和葡萄糖。羧酸化合物的实例可以包括伯羧酸如烷基羧酸、仲羧酸和叔羧酸;二羧酸;以及具有环状结构的羧基化合物。在烧结期间逸出或产生一氧化碳的有机酸盐、有机酸酯和羰基络合物等也可以用作促进氧化银还原的组分。
添加剂可以单独使用或两种以上组合使用。
当非有机碱化合物的添加剂被使用时,基于100质量份的银填料,所述添加剂的含量优选为0.01至5.0质量份,更优选为0.05至2.0质量份,且还更优选为0.1至1.0质量份。
<银填料>
银填料为根据本发明的粘合材料的主要组分。粘合材料中的银填料通过加热而融合在一起(烧结)以形成银烧结产物,由此形成具有优异导热率和粘合强度的粘合层。
根据本发明的粘合材料的银填料的含量优选为粘合材料中固体组分总质量的75质量%以上,更优选为85质量%以上,且还更优选为90质量%以上,且可以甚至更优选为95质量%以上。所述含量的上限不受特别限制,且可以为粘合材料中固体组分总质量的100质量%。本文中的“固体组分”意指在粘合材料之中除了通过加热从粘合层消失的组分以外的所有组分,换言之,意指在烧结后烧结产物中保留的所有组分。随着银填料的含量增加,获得具有优异粘合强度和导热率的粘合材料。
银填料优选具有1nm至50μm的中心颗粒直径(central particle diameter)。银填料的中心颗粒直径更优选为10nm至30μm,且还更优选为100nm至20μm。当银填料的中心颗粒直径位于上述范围内时,填料的可烧结性可以更为改进。此外,填料被很好地分散于粘合材料中,这可以改进粘合材料的保存稳定性,且提供均一的粘合强度。本文中,银填料的“中心颗粒直径”表示,通过由激光衍射粒径分析仪测量而获得的基于体积的粒径分布曲线中的中值直径(50%颗粒直径:D50)。
银填料的形状不受特别限制,且其实例包括球状、近似球形、椭圆球状、纺锤状、立方体状、近似立方体状、片状以及不定形形状。在上述形状之中,从保存稳定性的观点,优选使用球状、近似球形和片状的填料。
在一实施方案中,片状填料还为进一步更优选的。片状填料的实例可以包括薄片状(plate-shaped)、层状(lamellar-shaped)、鳞片状(scale-shaped)的填料。片状填料的优选实例包括在侧面方向上具有薄片状且在前面(front face)方向上具有圆形、椭圆状、多边形或不定形形状的颗粒。具有这样的形状的填料具有优异的加热可烧结性,因为填料之间有高接触面积,这可以降低烧结产物中的孔隙率。
片状填料的含量优选为银填料的30质量%以上,更优选为50质量%以上,且还更优选为60质量%以上,且进一步更优选为银填料的70质量%以上。在一实施方案中,片状填料的含量优选为80质量%以上,更优选为90质量%以上,且可以为100质量%。当以上述范围包含片状填料时,可以形成具有低孔隙率和优异导热率的烧结产物。
片状填料的优选实例将在下文描述。
在本发明中,具有平滑表面的片状填料为特别优选的。由于这样的填料具有平坦表面,填料之间的接触面积更为增加,这实现了优异的可烧结性,由此提供具有优异导热率的粘合层。此外,由于填料具有平滑表面,因此填料具有优异的可分散性,由此可以形成具有均匀粘合强度的粘合层。
本文中,当填料具有平滑表面时,该表面的算术平均粗糙度(Ra)优选为20nm以下,且更优选为10nm以下。从填料的可分散性及由其获得的粘合层的导热率的观点,填料的算术平均粗糙度(Ra)优选为8.5nm以下,更优选为5nm以下,且更优选为3.5nm以下。考虑到制造的容易性,填料的算术平均粗糙度(Ra)优选为1nm以上。
本文中,算术平均粗糙度(Ra)可以用原子力显微镜(AFM)测量。AFM使用连附于悬臂尖端的探针追踪样品表面,或于探针与样品表面之间维持恒定距离扫描样品表面。样品表面的凹凸形状通过测量悬臂的垂直位移来评价。测量条件如下。
模式:接触模式
悬臂:奥林巴斯公司制造的OMCL-TR800PSA-1
高度-方向分辨率:0.01nm
横向-方向分辨率:0.2nm
此外,具有平滑表面的片状填料优选为结晶填料。结晶片状填料具有优异的可烧结性,这可以提供优异的粘合强度。晶体可以为单晶或多晶。从表面平滑性的观点,晶体优选为单晶。结晶银填料可通过X射线衍射分析等确认。
片状填料优选具有0.05μm以上且20μm以下的中心颗粒直径(D50)。中心颗粒直径为0.05μm以上的颗粒容易制造,且中心颗粒直径为20μm以下的颗粒具有优异的可烧结性。中心颗粒直径更优选为15μm以下,且还更优选为8μm以下;在一实施方案中,5μm以下可以是特别优选的。中心颗粒直径更优选为0.1μm以上,且更优选为0.3μm以上。
颗粒直径的标准偏差(δD)优选为10μm以下,更优选为8μm以下,且还更优选为4μm以下。本文中,颗粒直径的标准偏差(δD)是基于随机选择的100个颗粒的颗粒直径所计算的数值。
颗粒的平均厚度(T)优选为1nm以上且100nm以下。平均厚度为1nm以上的颗粒可以比较容易制造,且平均厚度为100nm以下的颗粒可以提供具有优异导热率的烧结产物。平均厚度更优选为80nm以下,且还更优选为50nm以下。平均厚度更优选为10nm以上,且还更优选为20nm以上。本文中,颗粒的平均厚度(T)为随机选择的100个颗粒的厚度的平均数值。颗粒的厚度可以基于扫描电子显微镜(SEM)影像用肉眼或通过使用图像-分析软件而测量。
片状填料的纵横比(颗粒的中心颗粒直径(D50)/平均厚度(T))优选为20以上且1000以下。纵横比优选为30以上,且还更优选为35以上。纵横比更优选为500以下,还更优选为200以下,且特别优选为100以下。
可用于本发明的银填料可由已知方法制造,例如还原法、研磨法、电解法、雾化法或热处理法。制造片状填料的方法(例如以上描述的那些)的实例包括日本专利特开第2014-196527号中所描述的方法。其全部公开内容通过援引加入的方式纳入本文。
在一实施方案中,银填料的表面可以用有机物质涂覆。
有机物质的量优选为银填料的0.01至10重量%且更优选为0.1至2重量%。还优选根据银填料的形状等来调节有机物质的量。例如,有机物质的量可以通过加热来挥发或热分解有机物质并测量重量减少而测量。
本文中,其中银填料“用有机物质涂覆”的状态包括其中通过将银填料分散在有机溶剂中而使有机溶剂附着于银填料的表面的状态。
涂覆银填料的有机物质的实例可以包括亲水性有机化合物,例如具有1至5个碳原子的烷基醇、具有1至5个碳原子的烷硫醇、和具有1至5个碳原子的烷多元醇、或具有1至5个碳原子的低级脂肪酸;以及疏水性有机化合物,例如具有15个以上碳原子的高级脂肪酸及其衍生物、具有6至14个碳原子的中级脂肪酸(middle fatty acid)及其衍生物、具有6个以上碳原子的烷基醇、具有16个以上碳原子的烷基胺、或具有6个以上碳原子的烷硫醇。
在这些物质中,高级脂肪酸、中级脂肪酸以及它们的金属盐、酰胺、胺或酯化合物是优选的。疏水性(憎水)有机化合物更优选为高级或中级脂肪酸,或其憎水衍生物。考虑到其涂覆效果,高级或中级脂肪酸是特别优选的。
高级脂肪酸的实例包括直链饱和脂肪酸,例如十五酸、十六酸、十七酸、十八酸、12-羟基十八酸、二十酸、二十二酸、二十四酸、二十六酸(蜡酸)或二十八酸;支链饱和脂肪酸,例如2-戊基壬酸、2-己基癸酸、2-庚基十二酸或异十八酸;不饱和脂肪酸,例如棕榈油酸、油酸、异油酸、反油酸、亚油酸、亚麻酸、蓖麻酸(recinoleic acid)、鳕油酸、芥酸以及鲨鱼油酸。
中级脂肪酸的实例包括直链饱和脂肪酸,例如己酸、庚酸、辛酸、壬酸、癸酸、十一酸、十二酸、十三酸、或十四酸;支链饱和脂肪酸,例如异己酸、异庚酸、2-乙基己酸、异辛酸、异壬酸、2-丙基庚酸、异癸酸、异十一酸、2-丁基辛酸、异十二酸、以及异十三酸;以及不饱和脂肪酸,例如10-十一烯酸。
制造具有用有机物质涂覆的表面的银填料的方法的实例包括,但不特别限于,通过还原法在有机溶剂的存在下制造银填料的方法。具体地,银填料可通过将羧酸银盐与伯胺混合、并且在有机溶剂的存在下使用还原剂沉积银填料而获得,例如如日本专利特开第2006-183072号和第2011-153362号等所描述。此外,银填料可以通过日本专利特开第2014-196527号所描述的方法获得,所述方法包括步骤:通过使用载体介质(例如水或醇)和分散介质(例如二醇)来分散草酸银,接着再施加热和/或压力。如此制造的片状填料可优选与本发明的烧结促进剂组合使用。上述申请的所有公开内容皆通过援引加入的方式纳入本文。
还优选将获得的银填料分散于用于制造填料的溶剂中、并将分散体直接加入到本发明的粘合材料中。
此外,银填料的表面可以涂覆有二层以上的有机物质。这样的填料可以例如通过将上述制造的具有有机物质涂层的银填料分散于其它有机溶剂中而获得。待加入到本发明粘合材料中的溶剂可优选用作这样的“其它溶剂”。
当银填料的表面用有机物质涂覆时,可以进一步防止或减少粘合材料中银填料的聚集。此外,可以将填料表面上的有机物质洗脱、挥发或在加热时热分解以暴露银表面,因此填料的可烧结性可以进一步提高。
在一实施方案中,银填料可以是氧化银颗粒或至少在其表面上具有氧化银层的颗粒。当使用这样的银填料时,银表面通过在烧结时氧化银的还原而被暴露出来,由此可以进一步提高可烧结性。
银填料可以单独使用或两种以上组合使用。不同形状或不同尺寸的填料的组合可以降低烧结产物的孔隙率。组合的实例包括,但不限于,片状填料与中心颗粒直径小于所述片状填料的中心颗粒直径的近似球形填料的混合物。近似球形填料的含量可以为银填料质量的1至50质量%,且更优选为5至30质量%。
在一实施方案中,根据本发明的粘合材料也可以包含其它金属的填料以代替一部分银填料。非银的金属的实例包含铜、金、锡、锌、钛以及这些金属的合金和氧化物,并且在这些物质中,铜和含有铜的合金为优选的。
这样的金属填料的颗粒直径、形状和表面涂覆的优选实例包括与上述银填料中所例示的那些相同的实例。非银填料的金属填料的含量优选为银填料的0至30质量%,更优选为1至20质量%。
<溶剂>
本发明的粘合材料可以还包含溶剂,所述溶剂在粘合材料的烧结温度以下的温度下挥发或消失。
溶剂可以调节粘合材料的流动性以改进可操作性。溶剂也可以具有通过在烧结期间挥发和/或移除涂覆银填料的有机层而改进银填料的可烧结性的作用。具有促进氧化银层还原的作用的化合物也优选用作溶剂。
用于本发明中的溶剂的沸点优选为60℃以上且300℃以下。当沸点在上述范围内时,可以抑制制造过程中的溶剂挥发或烧结后的溶剂残留。
溶剂的实例包括,但不限于:醇,例如脂肪族醇、脂环族醇、芳香族醇以及多元醇;二醇醚;二醇酯;二醇醚酯;脂肪族和/或芳香族烃;酯;醚;酰胺;以及环酮。溶剂的具体实例包括,但不特别限于,甲基卡必醇、乙基卡必醇、丙基卡必醇、丁基卡必醇(BC)、二丙二醇一甲醚(DPGME)、三乙二醇二甲醚、甲基溶纤剂、乙基溶纤剂、或丁基溶纤剂、乙基卡必醇乙酸酯、丁基卡必醇乙酸酯(BCA)、甲基溶纤剂乙酸酯、或乙基溶纤剂乙酸酯、乙二醇、一缩二丙二醇(DPG)、聚乙二醇、环辛酮、环庚酮、环己酮、苯甲醇、甘油、丁基乙氧基乙基乙酸酯、碳酸丙烯酯、四氢呋喃、二乙醚(diethyl eter)、γ-丁内酯、异佛尔酮、缩水甘油苯基醚、松香醇、二甲基甲酰胺、二甲基乙酰胺、N-甲基吡咯烷酮等。
溶剂可单独使用或两种以上组合使用。
待添加的溶剂的量并无特别限制,且基于100质量份的银填料,优选为0.5质量份以上且20质量份以下,更优选为1质量份以上且15质量份以下,且还更优选为2质量份以上且10质量份以下。在一实施方案中,所述量优选为8质量份以下,且更优选为6质量份以下。在溶剂的量在上述范围内时,在施加后的干燥或烧结步骤中的收缩率可以进一步降低,同时维持制造过程中改进的可操作性。
根据本发明的粘合材料具有优选5,000至150,000mPa·s且更优选8,000至100,000mPa·s的粘度。粘合材料优选具有1.0至5.0的触变指数。当粘度和触变指数在上述范围内时,可进一步改进粘合材料的可操作性。本文中,粘度表示于7号转子/10rpm/25℃的条件下使用brookfield粘度计(RVDV-II)测得的数值。触变指数为作为以相似方式测得的于0.5rpm的粘度/于5rpm的粘度之比所计算而得到的值。
此外,本发明可以适当地适用于还包含非可烧结金属的组分(例如无机细微颗粒、树脂、抗氧化剂、稳定剂、分散剂和触变性质赋予材料等)的粘合材料。
根据本发明的粘合材料可以通过以下制造:将银填料和作为烧结促进剂的有机碱化合物以及任选存在的溶剂、添加剂等引入混合器(例如珠磨机、研磨机、罐磨机、三辊磨机、旋转式混合器或双螺杆混合器)中,并将这些物质混合。
粘合层通过将根据本发明的粘合材料施用于待粘合的部件的期望部分、并将其加热而形成。
根据本发明的一实施方案,可以获得具有较低孔隙率的粘合层。例如,粘合层的孔隙率可为10%以下,优选为6%以下,且更优选为4%以下。然而,孔隙率可随粘合材料中所包含的组分、烧结条件等而改变。
本文中,孔隙率为整个粘合区域(在两个待粘合的部件之间所夹的区域)的平均值,且可以如下测量且在实施例中详细地解释。
1.将粘合制品用抛光器抛光以暴露粘合层的截面表面。
2.从粘合区域的一端至另一端采集该表面的10张以上的SEM图像。
3.将这些图像输入显微镜中,通过亮度提取法(luminance extraction)提取出图中的空气空间,并计算空气空间的面积比例。粘合区域的孔隙率作为采集的所有图像的孔隙率的平均值计算。
根据本发明的一实施方案,可以得到具有高导热率的粘合层。例如,粘合层的导热率可以为200W/mK以上,优选为230W/mK以上。在一优选实施方案中,粘合层的导热率可为280W/mK以上,且优选为300W/mK以上。然而,导热率可以随粘合层中包含的组分、烧结条件等而改变。本文中,导热率可通过参考JIS R1611-2010使用激光-闪光热量计的方法来测定,其细节于实施例中解释。
粘合层的厚度可以根据应用而适当地设定以表现出所需的粘合强度,例如,厚度可以设定为40至100μm。
根据本发明的粘合材料可适当地用于各种应用,且特别适合用于粘合功率半导体的元件,对于所述功率半导体而言需要高热量释放特性、改进的粘合强度和高温操作下的高可靠性。
使用根据本发明的粘合材料制造粘合制品的方法包括以下步骤:
提供两个待粘合的部件;
布置这两个部件和粘合材料从而使所述两个部件的待粘合的表面面向彼此且根据本发明的粘合材料布置于其间;以及
将具有布置于其间的粘合材料的两个部件加热至预定温度。
作为其中使用根据本发明的粘合材料的粘合制品的一个方面,将描述半导体装置及其制造方法。
图1为根据本发明一实施方案的半导体装置的部分横截面图。半导体装置包括半导体芯片(1)和基板(4),其中半导体芯片(1)和基板的金属表面(3)由粘合层(2)彼此粘合在一起,所述粘合层(2)通过烧结根据本发明的粘合材料而获得。半导体装置可以还包括冷却板(5),其中半导体芯片(1)与基板的金属表面(3),和/或基板的金属表面(3)与冷却板(5)由通过烧结根据本发明的粘合材料而获得的粘合层(2和/或2')彼此粘合在一起。
(待粘合的部件)
半导体芯片不受特别限制。其实例可以包括,但不特别限于,Si芯片和SiC芯片。半导体芯片的背面(待粘合的表面)优选镀有银、铜、镍和金等金属。半导体芯片的形状的实例包括,但不特别限于,高度和宽度为约2mm至约15mm的正方形和矩形。
基板的实例包括,但不特别限于,金属基板、陶瓷基板以及具有其中金属层与陶瓷层以三明治结构层叠的结构的基板。基板的表面(待粘合的表面)优选为金属。例如,可适当地使用镀金属的基板,例如镀银基板、镀金基板、镀镍基板或镀锡基板;以及金属基板,例如铜基板或铝基板。具体的实例可以包括DBU基板、DBA基板、AMB基板等,但不限于此。
(制造半导体装置的方法)
制造根据本发明实施方案的半导体装置的方法包括以下步骤:
(1)将根据本发明的粘合材料施用于基板上,
(2)将半导体芯片放置于所述基板上,以及
(3)加热其上放置所述半导体芯片的基板。
在上述步骤(1)中,将粘合材料施用于基板上的方法并不受到特别限制,可以使用分配法(dispense method)和丝网印刷法。
在上述步骤(2)中,可以使用已知的方法作为将半导体芯片放置(安装)于基板上的方法。上述步骤(2)也可以包括将半导体芯片定位的步骤以及调节所施用的粘合材料的厚度的步骤等。
在上述步骤(3)中,可以根据粘合材料或待粘合的部件适当选择加热方法。
烧结曲线(sintering profile)的实例,但不限于,包括:
干燥步骤:90℃以上,15分钟以上
烧结温度:250℃以上,例如,300℃
压力:10MPa以上
时间:3分钟至5分钟
在另一实施方案中,由于本发明粘合材料的改进的烧结能力,可以适当地使用其中施加低压力或不施加压力的烧结曲线。烧结过程时的低压或不施加压力可通过减小模片(die)粘合过程的应力而具有提高生产率或改进半导体装置品质的效果。
根据本发明的粘合材料可以用于各种应用,例如电子零件、电子装置、电气零件和电气装置。例如,粘合材料可以适当地用以粘合芯片组件与电路基板,例如电容器或电阻器的电路基板;半导体芯片与引线框架或电路基板,例如二极管、内存、IC或CPU的引线框架或电路基板;以及高发热CPU芯片与冷却板。
实施例
在下文,出于更详细地描述本发明的目的,通过实施例描述本发明。这些实施例用于描述本发明,而绝非限制本发明。
以下示出本实施例中所用的材料。如果没有另外说明,则使用市售可得的高纯度产品作为试剂。
<银填料>
片状填料(纵横比=20~200,Ra≤10nm)与球状填料(D50=0.79μm)的混合物
<添加剂>
Perbutyl D(二叔丁基过氧化物)
比较化合物1:HOOC-(CH2)n-COOH(n=4-5)
比较化合物2:HOOC-(CH2)n-COOH(n=1-3)
咪唑(1,3-二氮杂-2,4-环戊二烯)
DBU(1,8-二氮杂双环[5.4.0]十一-7-烯)
<溶剂>
BC(丁基卡必醇)
BCA(丁基卡必醇乙酸酯)
DPG(一缩二丙二醇)
<实施例I>
将银填料1:90.24重量%、表1所示的添加剂:0.2重量%、以及溶剂(BCA/DPG=1/1(质量比)):9.56重量%进行混合以制备粘合材料。
将所获得的粘合材料以100μm的厚度印刷于基板(镀银的铜引线框架,25×25mm,厚度为0.3mm)上。将半导体芯片(背面镀银的Si模片,5×5mm)安装于基板上。将具有芯片的基板在烘箱中在250℃/60分钟/无压力的条件下加热,以获得用于评价的试件。试件的粘合层的孔隙率如下测定。
(孔隙率测定)
1.试件的抛光:
装置:BUEHLER Beta GRINDER-POLISHER 60-1990
抛光纸:Struers SiC纸#120、#220、#500、#800、#1200、#2000
抛光轮(Buff):Struers DP-Nap尺寸:200mm直径(dia)
金刚石喷雾:Struers DP-Spray P 1μm、1/4μm
将试件依次用抛光纸#120、#220、#500、#800、#1200、#2000、抛光轮、金刚石喷雾1μm、1/4μm抛光,以暴露粘合层的横截面表面。
2.SEM成像:粘合层的横截面表面的SEM图像通过使用扫描电子显微镜(HITACHIS-3000,放大倍数=2000倍,1280×960dpi,15张图,从粘合区域的右边缘至左边缘)而进行采集。
3.孔隙率计算:将所获得的图像输入到显微镜(Keyence DigitalMicroscopeVHX-500)中,通过亮度提取来提取出空气空间,并且孔隙率作为通过图像中空气空间的面积的比例而确定。平均孔隙率通过对15张图像的孔隙率取平均值而计算。结果示于表1中。
[表1]
如表1所示,实施例1和2中实现了低于10%的孔隙率,这表明有机碱化合物当用作烧结促进剂时可改进粘合材料的可烧结性。
(发热特性)
对所获得的粘合材料的发热特性通过差示扫描量热法(升温速度为10℃/分钟)分析。结果示于图2中。
如图2所示,在实施例1和2中观察到了独特的放热峰,这表示用作烧结促进剂的有机碱化合物增强了银填料表面的活化,例如通过加速其涂层物质的降解。
<实施例II>
将银填料1:90.24重量%、作为烧结促进剂的DBU:0.2重量%、以及示于表2中的溶剂:9.56重量%混合以制备粘合材料。
将所获得的粘合材料以100μm的厚度印刷在基板(镀银的铜DBC,25×25mm,厚度为1mm)上。将半导体芯片(背面镀银的Si模片,5×5mm)安装在基板上。将具有芯片的基板于90℃干燥30分钟,且于烘箱中在250℃/5分钟/10MPa的条件下加热,以获得用于评价的试件。试件的粘合层的孔隙率如上所述那样确定。结果示于表2中。
[表2]
实施例3 | 实施例4 | |
溶剂 | BCA/DPG 1/1 | BCA |
孔隙率(%) | 2.4 | 1.9 |
如表2所示,在其中使用不同溶剂且将粘合材料于压力下烧结的情况下也实现了较低孔隙率。
<实施例III>
将银填料(片状填料(纵横比=20~200,Ra≤10nm)与球形填料(D50=0.45μm)的混合物):94.9重量%、作为烧结促进剂的DBU:0.2重量%、和BC:4.9重量%混合以制备粘合材料(实施例5)。
将所获得的粘合材料以100μm的厚度印刷于两个基板(厚度为500μm、的镀银的铜)之间。将具有粘合材料的两个基板于90℃下干燥30分钟,且于烘箱中在300℃/5分钟/10MPa的条件下加热,以获得用于评价的试件。烧结后粘合层的厚度为约40至60μm,所得试件(即,两个基板与粘合层的厚度)的厚度为约1.0至1.1mm。
(导热率的测量)
将所获得的试件放置在Kyoto Denshi Kogyo LFA-502内,且厚度方向的导热率通过测量热扩散系数(α(m2/s))、比热容量(c(J/gK))和室温下(23±1℃)的材料密度(ρ(g/m3)而测定,且导热率(λ(W/mK)通过关系式:λ=αcρ而计算。作为参比,将厚度为1mm的镀银的铜板的导热率以上述相同的方式测量,其为380W/mK。
实施例5的粘合材料的导热率为280W/mK。
这些结果表明,使用有机碱化合物作为烧结促进剂可以改进粘合材料的可烧结性;因此,形成具有低孔隙率和高导热率的粘合层。
[产业实用性]
根据本发明的粘合材料可以应用于电子组件、电子装置、电气组件、电气装置等。特别是,该粘合材料可以有效地用于粘合芯片组件与电容器、电阻器等的电路基板;半导体芯片与二极管、内存、IC、CPU等的引线框架或电路基板;以及高发热CPU元件与冷却板。
符号说明
1:半导体芯片
2、2’:粘合层
3:基板的金属表面
4:基板
5:冷却板
Claims (9)
1.可烧结的粘合材料,包含:
i)基于粘合材料中固体组分的总质量,至少85质量%的银填料;和
ii)作为烧结促进剂的有机碱化合物,
其中所述银填料包括片状填料,并且其中所述有机碱化合物为含氮的杂环化合物。
2.根据权利要求1所述的可烧结的粘合材料,其中所述有机碱化合物具有脒部分和/或胍部分。
3.根据权利要求1或2所述的可烧结的粘合材料,其中所述有机碱化合物的共轭酸的pKa为7.0以上。
4.根据权利要求1或2所述的可烧结的粘合材料,其中所述有机碱化合物是选自被取代的或未取代的咪唑、1,8-二氮杂双环[5.4.0]-7-十一烯和1,5-二氮杂双环[4.3.0]-5-壬烯中的至少一种。
5.根据权利要求1或2所述的可烧结的粘合材料,其中所述银填料包含至少30质量%的片状填料。
6.根据权利要求1或2所述的可烧结的粘合材料,其中所述银填料包括用原子力显微镜(AFM)测量的算术平均粗糙度(Ra)为10nm以下的片状填料。
7.根据权利要求1或2所述的可烧结的粘合材料,还包含溶剂。
8.通过使用权利要求1至7中任一项所述的可烧结的粘合材料制造的半导体装置。
9.制造半导体装置的方法,包括以下步骤:
提供两个待粘合的部件;
布置所述两个部件和粘合材料从而使所述两个部件的待粘合的表面面向彼此且所述粘合材料布置于其间;以及
将具有布置于其间的粘合材料的两个部件加热至预定的温度,
其中所述粘合材料是权利要求1至7中任一项所限定的可烧结的粘合材料,其包含:
i)基于粘合材料中固体组分的总质量,至少85质量%的银填料;和
ii)作为烧结促进剂的有机碱化合物,
其中所述银填料包括片状填料,并且其中所述有机碱化合物为含氮的杂环化合物。
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JP2018206826A (ja) * | 2017-05-31 | 2018-12-27 | Dowaエレクトロニクス株式会社 | 接合材、接合体および接合方法 |
US11287107B2 (en) * | 2018-02-14 | 2022-03-29 | Ngk Spark Plug Co., Ltd. | Optical wavelength conversion device |
JP7238352B2 (ja) * | 2018-11-14 | 2023-03-14 | 東洋インキScホールディングス株式会社 | 接合用ペースト、及び該接合用ペーストで接合されてなる物品 |
US20220118546A1 (en) * | 2019-03-29 | 2022-04-21 | Mitsui Mining & Smelting Co., Ltd. | Composition for pressure bonding, and bonded structure of conductive bodies and production method therefor |
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US10910340B1 (en) * | 2019-10-14 | 2021-02-02 | Heraeus Deutschland GmbH & Co. KG | Silver sintering preparation and the use thereof for the connecting of electronic components |
DE112021007870T5 (de) * | 2021-06-23 | 2024-04-04 | Mitsubishi Electric Corporation | Halbleitereinrichtung und verfahren zum herstellen einer halbleitereinrichtung |
CN114429829B (zh) * | 2021-12-06 | 2022-11-18 | 哈尔滨理工大学 | 一种功率器件封装用复合膏体及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11343179A (ja) * | 1998-05-28 | 1999-12-14 | Kyocera Corp | セラミックス−金属接合用ろう材 |
CN1497345A (zh) * | 2002-09-30 | 2004-05-19 | 太阳油墨制造株式会社 | 感光性热固性糊状组合物以及使用其得到的烧成物图案 |
CN1687992A (zh) * | 2005-05-13 | 2005-10-26 | 范琳 | 一种无铅银电极浆料及其制造方法 |
CN102598235A (zh) * | 2009-09-30 | 2012-07-18 | 积水化学工业株式会社 | 半导体接合用粘接剂、半导体接合用粘接膜、半导体芯片的安装方法及半导体装置 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3760578B2 (ja) * | 1997-07-07 | 2006-03-29 | ソニー株式会社 | 銀ペーストダイボンド材および半導体装置 |
US6422528B1 (en) * | 2001-01-17 | 2002-07-23 | Sandia National Laboratories | Sacrificial plastic mold with electroplatable base |
JP4487143B2 (ja) | 2004-12-27 | 2010-06-23 | ナミックス株式会社 | 銀微粒子及びその製造方法並びに導電ペースト及びその製造方法 |
JP4770533B2 (ja) | 2005-05-16 | 2011-09-14 | 富士電機株式会社 | 半導体装置の製造方法および半導体装置 |
JP4247801B2 (ja) | 2006-11-24 | 2009-04-02 | ニホンハンダ株式会社 | ペースト状金属粒子組成物および接合方法 |
JP4470193B2 (ja) | 2008-05-01 | 2010-06-02 | ニホンハンダ株式会社 | 加熱焼結性銀粒子の製造方法、固形状銀の製造方法、金属製部材の接合方法、プリント配線板の製造方法および電気回路接続用バンプの製造方法 |
JP5011225B2 (ja) | 2008-07-09 | 2012-08-29 | ニホンハンダ株式会社 | 金属製部材用接合剤、金属製部材接合体の製造方法、金属製部材接合体、および電気回路接続用バンプの製造方法 |
JP4633857B1 (ja) | 2009-04-16 | 2011-02-23 | ニホンハンダ株式会社 | 有機物被覆金属粒子の加熱焼結性の評価方法、加熱焼結性金属ペーストの製造方法、および金属製部材接合体の製造方法 |
JP4928639B2 (ja) | 2010-03-15 | 2012-05-09 | Dowaエレクトロニクス株式会社 | 接合材およびそれを用いた接合方法 |
JP5487301B2 (ja) | 2010-06-11 | 2014-05-07 | Dowaエレクトロニクス株式会社 | 低温焼結性接合材および該接合材を用いた接合方法 |
JP4870223B1 (ja) * | 2010-09-02 | 2012-02-08 | ニホンハンダ株式会社 | ペースト状銀粒子組成物、金属製部材接合体の製造方法および金属製部材接合体 |
DE102010044329A1 (de) | 2010-09-03 | 2012-03-08 | Heraeus Materials Technology Gmbh & Co. Kg | Kontaktierungsmittel und Verfahren zur Kontaktierung elektrischer Bauteile |
TWI509631B (zh) * | 2011-02-25 | 2015-11-21 | Henkel IP & Holding GmbH | 用於電子裝置之可燒結銀薄片黏著劑 |
JP2013041884A (ja) * | 2011-08-11 | 2013-02-28 | Furukawa Electric Co Ltd:The | 半導体装置 |
JP5962025B2 (ja) * | 2012-01-23 | 2016-08-03 | 三菱マテリアル株式会社 | 導電性組成物及び接合体の製造方法 |
JP5425962B2 (ja) | 2012-04-04 | 2014-02-26 | ニホンハンダ株式会社 | 加熱焼結性銀粒子の製造方法、ペースト状銀粒子組成物、固形状銀の製造方法、金属製部材の接合方法、プリント配線板の製造方法および電気回路接続用バンプの製造方法 |
US20150231698A1 (en) * | 2012-08-02 | 2015-08-20 | National University Corporation Yamagata University | Process for producing coated silver fine particles and coated silver fine particles produced by said production process |
JP6000771B2 (ja) * | 2012-09-12 | 2016-10-05 | 住友精化株式会社 | 金属ペースト組成物 |
JP6180769B2 (ja) * | 2013-03-29 | 2017-08-16 | トクセン工業株式会社 | フレーク状の微小粒子 |
JP6900148B2 (ja) * | 2013-10-22 | 2021-07-07 | 昭和電工マテリアルズ株式会社 | 銀ペースト及びそれを用いた半導体装置 |
-
2014
- 2014-12-26 WO PCT/JP2014/084764 patent/WO2016103527A1/en active Application Filing
- 2014-12-26 JP JP2017534361A patent/JP6857125B2/ja active Active
- 2014-12-26 EP EP14909127.4A patent/EP3238238B1/en active Active
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-
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- 2015-11-27 TW TW104139547A patent/TWI694884B/zh active
-
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- 2017-06-23 US US15/631,223 patent/US10141283B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11343179A (ja) * | 1998-05-28 | 1999-12-14 | Kyocera Corp | セラミックス−金属接合用ろう材 |
CN1497345A (zh) * | 2002-09-30 | 2004-05-19 | 太阳油墨制造株式会社 | 感光性热固性糊状组合物以及使用其得到的烧成物图案 |
CN1687992A (zh) * | 2005-05-13 | 2005-10-26 | 范琳 | 一种无铅银电极浆料及其制造方法 |
CN102598235A (zh) * | 2009-09-30 | 2012-07-18 | 积水化学工业株式会社 | 半导体接合用粘接剂、半导体接合用粘接膜、半导体芯片的安装方法及半导体装置 |
Non-Patent Citations (1)
Title |
---|
导电填料对电子浆料性能影响的研究进展;冯清福等;《贵金属》;20130515(第02期);正文 * |
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TW201628758A (zh) | 2016-08-16 |
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KR102236786B1 (ko) | 2021-04-05 |
EP3238238A4 (en) | 2018-08-29 |
US20170294396A1 (en) | 2017-10-12 |
EP3238238A1 (en) | 2017-11-01 |
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KR20170100622A (ko) | 2017-09-04 |
JP6857125B2 (ja) | 2021-04-14 |
US10141283B2 (en) | 2018-11-27 |
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JP2018501657A (ja) | 2018-01-18 |
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