CN107093451A - Ddr sdram控制电路、ddr sdram芯片、pcb板及电子设备 - Google Patents
Ddr sdram控制电路、ddr sdram芯片、pcb板及电子设备 Download PDFInfo
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- CN107093451A CN107093451A CN201710173906.7A CN201710173906A CN107093451A CN 107093451 A CN107093451 A CN 107093451A CN 201710173906 A CN201710173906 A CN 201710173906A CN 107093451 A CN107093451 A CN 107093451A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
- G11C7/1066—Output synchronization
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/1093—Input synchronization
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- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
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Abstract
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Priority Applications (1)
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CN201710173906.7A CN107093451B (zh) | 2017-03-22 | 2017-03-22 | Ddr sdram控制电路、ddr sdram芯片、pcb板及电子设备 |
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CN201710173906.7A CN107093451B (zh) | 2017-03-22 | 2017-03-22 | Ddr sdram控制电路、ddr sdram芯片、pcb板及电子设备 |
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CN107093451A true CN107093451A (zh) | 2017-08-25 |
CN107093451B CN107093451B (zh) | 2020-03-27 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108416176A (zh) * | 2018-04-28 | 2018-08-17 | 珠海市微半导体有限公司 | 一种dram控制器的抗干扰方法和电路及芯片 |
CN108922571A (zh) * | 2018-08-02 | 2018-11-30 | 珠海市微半导体有限公司 | 一种ddr内存的读数据信号处理电路及读数据处理方法 |
CN110379454A (zh) * | 2019-06-04 | 2019-10-25 | 航天科工防御技术研究试验中心 | 一种提升ddr器件测试速率的装置 |
CN110399319A (zh) * | 2019-07-25 | 2019-11-01 | 尧云科技(西安)有限公司 | 一种NAND Flash PHY |
CN112650139A (zh) * | 2020-12-11 | 2021-04-13 | 北京时代民芯科技有限公司 | 一种面向ddr3存储协议的时钟控制器及控制方法 |
CN116665731A (zh) * | 2023-08-02 | 2023-08-29 | 成都智多晶科技有限公司 | 一种ddr存储器采样校准方法及ddr存储器 |
Citations (4)
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CN101149961A (zh) * | 2006-09-20 | 2008-03-26 | 三星电子株式会社 | 用于控制存储器接口的设备和方法 |
CN101478308A (zh) * | 2009-01-13 | 2009-07-08 | 北京时代民芯科技有限公司 | 基于延时锁定环的可配置频率合成电路 |
US20100166132A1 (en) * | 2000-12-20 | 2010-07-01 | Benjamim Tang | Pll/dll dual loop data synchronization |
CN104658578A (zh) * | 2015-03-10 | 2015-05-27 | 广东工业大学 | 一种高速数据采集系统中的sdram控制方法 |
-
2017
- 2017-03-22 CN CN201710173906.7A patent/CN107093451B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100166132A1 (en) * | 2000-12-20 | 2010-07-01 | Benjamim Tang | Pll/dll dual loop data synchronization |
CN101149961A (zh) * | 2006-09-20 | 2008-03-26 | 三星电子株式会社 | 用于控制存储器接口的设备和方法 |
CN101478308A (zh) * | 2009-01-13 | 2009-07-08 | 北京时代民芯科技有限公司 | 基于延时锁定环的可配置频率合成电路 |
CN104658578A (zh) * | 2015-03-10 | 2015-05-27 | 广东工业大学 | 一种高速数据采集系统中的sdram控制方法 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108416176A (zh) * | 2018-04-28 | 2018-08-17 | 珠海市微半导体有限公司 | 一种dram控制器的抗干扰方法和电路及芯片 |
CN108416176B (zh) * | 2018-04-28 | 2023-09-08 | 珠海一微半导体股份有限公司 | 一种dram控制器的抗干扰方法和电路及芯片 |
CN108922571A (zh) * | 2018-08-02 | 2018-11-30 | 珠海市微半导体有限公司 | 一种ddr内存的读数据信号处理电路及读数据处理方法 |
CN108922571B (zh) * | 2018-08-02 | 2024-01-23 | 珠海一微半导体股份有限公司 | 一种ddr内存的读数据信号处理电路及读数据处理方法 |
CN110379454A (zh) * | 2019-06-04 | 2019-10-25 | 航天科工防御技术研究试验中心 | 一种提升ddr器件测试速率的装置 |
CN110399319A (zh) * | 2019-07-25 | 2019-11-01 | 尧云科技(西安)有限公司 | 一种NAND Flash PHY |
CN110399319B (zh) * | 2019-07-25 | 2021-03-23 | 尧云科技(西安)有限公司 | 一种NAND Flash PHY |
CN112650139A (zh) * | 2020-12-11 | 2021-04-13 | 北京时代民芯科技有限公司 | 一种面向ddr3存储协议的时钟控制器及控制方法 |
CN112650139B (zh) * | 2020-12-11 | 2022-08-02 | 北京时代民芯科技有限公司 | 一种面向ddr3存储协议的时钟控制器及控制方法 |
CN116665731A (zh) * | 2023-08-02 | 2023-08-29 | 成都智多晶科技有限公司 | 一种ddr存储器采样校准方法及ddr存储器 |
CN116665731B (zh) * | 2023-08-02 | 2023-10-03 | 成都智多晶科技有限公司 | 一种ddr存储器采样校准方法及ddr存储器 |
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CN107093451B (zh) | 2020-03-27 |
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Effective date of registration: 20191212 Address after: Unit D88, floor 2, convention and Exhibition Center, No.1, Software Park Road, Tangjiawan Town, hi tech Zone, Zhuhai City, Guangdong Province Applicant after: Jianrong Integrated Circuit Technology (Zhuhai) Co., Ltd. Address before: 518000 Guangdong city of Shenzhen province Nanshan District Gao Xin Road No. 013 Fu technology building B block 5 layer 505 Applicant before: Jian Rong semiconductor (Shenzhen) Co., Ltd. Applicant before: Jianrong Integrated Circuit Technology (Zhuhai) Co., Ltd. Applicant before: ZHUHAI HUANGRONG INTEGRATED CIRCUIT TECHNOLOGY CO., LTD. |
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Effective date of registration: 20220124 Address after: Rooms 1306-1309, 13 / F, 19 science Avenue West, Hong Kong Science Park, Shatin, New Territories, China Patentee after: BUILDWIN INTERNATIONAL (ZHUHAI) LTD. Address before: Unit D88, 2 / F, convention and Exhibition Center, No.1 Software Park Road, Tangjiawan Town, hi tech Zone, Zhuhai, Guangdong 519000 Patentee before: BUILDWIN INTERNATIONAL (ZHUHAI) Ltd. |