CN107092163B - 光刻装置以及物品制造方法 - Google Patents

光刻装置以及物品制造方法 Download PDF

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Publication number
CN107092163B
CN107092163B CN201710078450.6A CN201710078450A CN107092163B CN 107092163 B CN107092163 B CN 107092163B CN 201710078450 A CN201710078450 A CN 201710078450A CN 107092163 B CN107092163 B CN 107092163B
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CN
China
Prior art keywords
substrate
electrode
lithographic apparatus
electrode structure
master
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CN201710078450.6A
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English (en)
Chinese (zh)
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CN107092163A (zh
Inventor
米川雅见
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Canon Inc
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Canon Inc
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Publication of CN107092163A publication Critical patent/CN107092163A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN201710078450.6A 2016-02-17 2017-02-14 光刻装置以及物品制造方法 Active CN107092163B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-028297 2016-02-17
JP2016028297A JP6643135B2 (ja) 2016-02-17 2016-02-17 リソグラフィ装置および物品製造方法

Publications (2)

Publication Number Publication Date
CN107092163A CN107092163A (zh) 2017-08-25
CN107092163B true CN107092163B (zh) 2020-12-29

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ID=59561429

Family Applications (1)

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CN201710078450.6A Active CN107092163B (zh) 2016-02-17 2017-02-14 光刻装置以及物品制造方法

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Country Link
US (1) US10228624B2 (https=)
JP (1) JP6643135B2 (https=)
KR (1) KR102091908B1 (https=)
CN (1) CN107092163B (https=)
SG (1) SG10201700942WA (https=)
TW (1) TWI663487B (https=)

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JP6732475B2 (ja) * 2016-02-29 2020-07-29 キヤノン株式会社 インプリント装置、物品の製造方法、保持装置および露光装置
US10722925B2 (en) * 2017-12-04 2020-07-28 Suss Micro Tec Photomask Equipment Gmbh & Co Kg Treatment head, treatment system and method for treating a local surface area of a substrate
US11376640B2 (en) * 2018-10-01 2022-07-05 Tokyo Electron Limited Apparatus and method to electrostatically remove foreign matter from substrate surfaces
US11506985B2 (en) * 2019-04-29 2022-11-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor apparatus and method of operating the same for preventing photomask particulate contamination
JP7495814B2 (ja) * 2020-05-13 2024-06-05 キヤノン株式会社 インプリント装置、および物品の製造方法
US11567417B2 (en) * 2021-01-20 2023-01-31 Applied Materials, Inc. Anti-slippery stamp landing ring
KR102542639B1 (ko) * 2021-02-10 2023-06-12 성균관대학교산학협력단 미세 패턴 형성 장치 및 방법
KR102528880B1 (ko) * 2021-02-16 2023-05-03 성균관대학교산학협력단 전기수력학 불안정성을 이용한 패턴제작기술의 미세 구조체 사이의 2차 간섭효과에 의한 초미세구조체 제작 및 초소수성표면 형성방법
US12463042B2 (en) 2022-05-31 2025-11-04 Canon Kabushiki Kaisha Planarization system and method

Citations (1)

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CN1410953A (zh) * 2001-08-27 2003-04-16 佳能株式会社 布线基板及其制造方法和图象显示装置

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JP2000228439A (ja) * 1999-02-05 2000-08-15 Advantest Corp ステージ上のパーティクル除去方法及び清掃板
JP2008258490A (ja) * 2007-04-06 2008-10-23 Canon Inc 露光装置及び原版
US8125603B2 (en) * 2007-05-17 2012-02-28 Lg Display Co., Ltd. In-plane switching mode liquid crystal display device and method for fabricating the same
US7558045B1 (en) * 2008-03-20 2009-07-07 Novellus Systems, Inc. Electrostatic chuck assembly with capacitive sense feature, and related operating method
JP2009246046A (ja) * 2008-03-28 2009-10-22 Canon Inc 露光装置及びデバイス製造方法
JP2009302234A (ja) * 2008-06-12 2009-12-24 Canon Inc 露光装置及びデバイス製造方法
JP2011040464A (ja) * 2009-08-07 2011-02-24 Canon Inc 異物除去装置、露光装置及びデバイス製造方法
JP5828626B2 (ja) * 2010-10-04 2015-12-09 キヤノン株式会社 インプリント方法
JP5846572B2 (ja) * 2011-07-27 2016-01-20 ギガフォトン株式会社 チャンバ装置、極端紫外光生成装置および極端紫外光生成装置の制御方法
JP2013197465A (ja) * 2012-03-22 2013-09-30 Toshiba Corp 静電チャック装置および露光装置
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WO2014054749A1 (ja) 2012-10-04 2014-04-10 大日本印刷株式会社 インプリント方法およびインプリント装置
JP6171412B2 (ja) 2013-03-06 2017-08-02 大日本印刷株式会社 インプリント方法、インプリント用のモールドおよびインプリント装置
JP2015149390A (ja) * 2014-02-06 2015-08-20 キヤノン株式会社 インプリント装置、型、および物品の製造方法
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Also Published As

Publication number Publication date
JP6643135B2 (ja) 2020-02-12
SG10201700942WA (en) 2017-09-28
TWI663487B (zh) 2019-06-21
CN107092163A (zh) 2017-08-25
KR20170096961A (ko) 2017-08-25
KR102091908B1 (ko) 2020-03-20
JP2017147343A (ja) 2017-08-24
US20170235234A1 (en) 2017-08-17
TW201740222A (zh) 2017-11-16
US10228624B2 (en) 2019-03-12

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