CN107043916B - The system that the magnetron sputtering of maintenance convenient for safeguarding prepares ito thin film - Google Patents
The system that the magnetron sputtering of maintenance convenient for safeguarding prepares ito thin film Download PDFInfo
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- CN107043916B CN107043916B CN201710288617.1A CN201710288617A CN107043916B CN 107043916 B CN107043916 B CN 107043916B CN 201710288617 A CN201710288617 A CN 201710288617A CN 107043916 B CN107043916 B CN 107043916B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses the systems that a kind of magnetron sputtering of maintenance convenient for safeguarding prepares ito thin film, comprising: preheating cavity, deposit cavity, cooling chamber, finished product chamber and the vacuum pump and control panel being sequentially connected.ITO target and magnet are provided on the two sidewalls of the deposit cavity, top cover is provided in the opening on the top of the deposit cavity, the underside of the top cover is connected with tool hollow gas transmission plate with dissection, the lower surface of the gas transmission plate is uniformly provided with multiple through-holes, so that reaction gas is passed through deposit cavity by the interlayer, several pillars are evenly arranged on the lower surface of the deposit cavity, the pillar can move up and down；The finished product is intracavitary to be provided with multiple grids, is multiple compartments by the finished product chamber even partition.It uses the preparation system of pipeline system, so that film forming efficiency greatly improves, and the homogeneous quality that forms a film is high.The system facilitates cleaning and maintaining for system simultaneously, alleviates the workload of maintenance, improves work efficiency.
Description
Technical field
The present invention relates to semiconductor processing equipment technical field more particularly to a kind of magnetron sputtering systems of maintenance convenient for safeguarding
The system of standby ito thin film.
Background technique
Indium tin oxide (ITO) is a kind of n-type semiconductor, and band gap is between 3.5 and 4.3eV, maximum carrier concentration
Up to 1021cm-3The order of magnitude, therefore ito film is transparent for visible light and near infrared light.Due to ito film have it is high visible
Light transmission rate, high infrared reflectivity, fabulous electrical conductance and the adhesiveness to substrate, it is in various fields such as photoelectricity
It is used as in sub- device, photovoltaic cell, liquid crystal display, sensor, biological devices, plate displaying device and hot mirror transparent
Electrode.
Electrically conducting transparent ito thin film can be prepared in many ways, due in efficient heterojunction solar battery preparation process
In, low temperature process and small ion bombardment are needed, and conductive film ITO requires low resistivity and high optical transmittance,
Therefore it is difficult to meet the requirements with conventional method.Film deposition techniques are the technologies that general technical field of semiconductors is widely used,
If insulating layer and metallized conductive layer are to be obtained by film deposition techniques.Physical vapor deposition device is to realize film deposition
The commonly used equipment of technology obtains film by means such as evaporation, ion beam, sputterings.Wherein, sputtering method deposition rate is fast, and
And obtain film compactness it is good, with high purity the features such as, generallyd use in the industry.But existing sputtering method deposits ito thin film
System completes the heating of substrate, deposition, cooling in a chamber, often inefficient, and film deposition is uneven, if
Standby maintenance is more troublesome.And during depositing ito thin film on substrate, ITO target is easy to be attached to chamber roof, in turn
It in Reusability, so that the attachment of chamber roof is more and more, is easy to happen attachment and falls, and then influence under top
Substrate causes occur impurity on substrate, influences film deposition, causes defective goods substandard products to increase, influences manufacturing schedule, causes to waste.
Summary of the invention
It is an object of the invention to solve at least the above problems, and provide the advantages of at least will be described later.
It is a still further object of the present invention to provide the system that a kind of magnetron sputtering of maintenance convenient for safeguarding prepares ito thin film,
Using the preparation system of pipeline system, so that film forming efficiency greatly improves, and the homogeneous quality that forms a film is high.
It is a still further object of the present invention to provide the system that a kind of magnetron sputtering of maintenance convenient for safeguarding prepares ito thin film,
Facilitate cleaning and maintaining for system, alleviates the workload of maintenance, improve work efficiency.
In order to realize these purposes and other advantages according to the present invention, following technical scheme is provided:
A kind of system that the magnetron sputtering of maintenance convenient for safeguarding prepares ito thin film, comprising:
Substrate is preheated to certain temperature, heating is respectively arranged on the top and bottom of the preheating cavity by preheating cavity
Device is provided with the first roller bearing on the two sidewalls of the preheating cavity；
Deposit cavity, is connected to the preheating cavity, and plasma results from the deposit cavity；The bottom surface of the deposit cavity
It is inside provided with heating plate, ITO target and magnet, the sputter face two of the ITO target are provided on the two sidewalls of the deposit cavity
Two is opposite, and the magnet is located at the rear portion of the ITO target, and the magnetic force of the magnet on the two sidewalls is on the contrary, with described
Magnetic field is formed between two sidewalls；The upper opening of the deposit cavity is provided with top cover in the opening, by opening for the deposit cavity
Mouth closure, the underside of the top cover are connected with tool hollow gas transmission plate with dissection, and the lower surface of the gas transmission plate is uniform
Multiple through-holes are offered, so that reaction gas is passed through deposit cavity by the interlayer, four walls of the gas transmission plate and center are equal
Multiple air inlets are provided with, the air inlet is connected with external reaction gas device；It is provided on the two sidewalls of the deposit cavity
Second roller bearing, second roller bearing is located at the lower section of the ITO target, and flushes with the height of first roller bearing, and described
Second roller bearing is scalable setting；Several pillars are evenly arranged on the lower surface of the deposit cavity, the pillar can be transported up and down
It is dynamic；
Cooling chamber is connected to the deposit cavity, and third roller bearing, the third are provided on the two sidewalls of the cooling chamber
The height of roller bearing is flushed with first roller bearing and the second roller bearing；
Finished product chamber is connected to the cooling chamber, and the finished product is intracavitary to be provided with multiple grids, and the finished product chamber is equal
It is even to be divided into multiple compartments；
Vacuum pump is separately connected with the preheating cavity, deposit cavity and cooling chamber, to control the vacuum of each chamber
Degree；
Control panel is separately connected with the preheating cavity, deposit cavity, cooling chamber and vacuum pump, in each chamber
Component and vacuum pump controlled.
Preferably, the magnetron sputtering of the maintenance convenient for safeguarding is prepared in the system of ito thin film, further includes:
Temperature sensor is controlled by the control panel, and is respectively arranged at the preheating cavity, deposit cavity and cooling chamber
Side wall on.
Preferably, the magnetron sputtering of the maintenance convenient for safeguarding is prepared in the system of ito thin film, the ITO target
Rear portion be connected with cooler.
Preferably, the magnetron sputtering of the maintenance convenient for safeguarding is prepared in the system of ito thin film, the air inlet
Front end is provided with baffle, to form a gas storage chamber, the intermediate openings of the baffle, by the storage before the air inlet
The indoor reaction gas of air cavity is passed through the gas transmission plate.
Preferably, the magnetron sputtering of the maintenance convenient for safeguarding is prepared in the system of ito thin film, the finished product chamber
Bottom is provided with telescopic platform, and the telescopic platform makes the lowermost compartment and the cooling chamber of the finished product chamber in full extension
Outlet it is concordant, the telescopic platform makes the outlet of the compartment and the cooling chamber of the top of the finished product chamber in complete shrink
Concordantly.
Preferably, the magnetron sputtering of the maintenance convenient for safeguarding is prepared in the system of ito thin film, on the telescopic platform
It is provided with gravity sensor, the gravity sensor and the control panel communication connection, the gravity sensor is sensing
When the weight of the finished product chamber increases, Xiang Suoshu control panel sends signal, and it is upward that the control panel controls the telescopic platform
Stretch the height of 1 compartment.
Preferably, the magnetron sputtering of the maintenance convenient for safeguarding is prepared in the system of ito thin film, on the telescopic platform
It is provided with the suggestion device with the control panel communication connection, the suggestion device is after the telescopic platform full extension to institute
It states control panel and issues prompt.
The present invention is include at least the following beneficial effects:
The magnetron sputtering of maintenance convenient for safeguarding of the invention prepares the system of ito thin film and passes through by preheating cavity, deposit cavity, cold
But the system for preparing ito thin film of chamber, finished product chamber and vacuum pump control panel composition, will prepare ito thin film on substrate
Process decomposition is completed in several chambers, so that film forming efficiency greatly improves, that is, improves the productivity of equipment.
By the way that certain temperature will be preheated to before substrate film coating in preheating cavity, so that time of the substrate in deposit cavity has
The reduction of effect, and then improve the working efficiency of deposit cavity, while reducing residence time of the substrate in deposit cavity, thus can be
It delivers the substrate in cooling chamber and is cooled down immediately after film forming, avoid the remaining target material deposition in deposit cavity on substrate, shadow
Ring the quality of film forming.
By the pillar that telescopic second roller bearing is arranged in deposit cavity He can move up and down, so that the second roller bearing is being incited somebody to action
After substrate is transported to designated position, the pillar of deposit cavity lower surface is moved upwards, thus by fragmented second roller bearing of substrate, the second rolling
It takes turns to deposit cavity two sides and shrinks, not with the EDGE CONTACT of substrate, and back prop is moved downward, and substrate is placed in the bottom of deposit cavity
On face, after being heated to assigned temperature via the bottom surface of deposit cavity in favor of substrate, ito thin film deposition is carried out, it is multiple by being arranged
Pillar can guarantee that each stress of substrate is relatively uniform, to avoid being crushed caused by substrate unbalance stress, and due to pillar
Sectional area is much smaller than pillar, thus effectively reduces the contact area of substrate and supporting object, and then reduce dirt on substrate
Attachment, that is, improve final product quality.
By the way that top cover is arranged on deposit cavity, and it is flexibly connected gas transmission plate on top cover, allows gas transmission plate by depositing
Intracavitary convenient disassembly, and then in maintenance, gas transmission plate can be easily replaced, maintenance efficiency is improved, that is, improves life
Efficiency is produced, meanwhile, guarantee that substrate surface is clean, conducive to the deposition of ito thin film, that is, improves the quality of finished product.
Further advantage, target and feature of the invention will be partially reflected by the following instructions, and part will also be by this
The research and practice of invention and be understood by the person skilled in the art.
Detailed description of the invention
Fig. 1 is the structural schematic diagram that the magnetron sputtering of maintenance convenient for safeguarding of the present invention prepares the system of ito thin film.
Specific embodiment
Present invention will be described in further detail below with reference to the accompanying drawings, to enable those skilled in the art referring to specification text
Word can be implemented accordingly.
It should be appreciated that such as " having ", "comprising" and " comprising " term used herein do not allot one or more
The presence or addition of a other elements or combinations thereof.
As shown in Figure 1, a kind of system that the magnetron sputtering of maintenance convenient for safeguarding prepares ito thin film, comprising: preheating cavity 1,
Substrate is preheated to certain temperature, having heaters is respectively set on the top and bottom of the preheating cavity 1, the preheating cavity 1
The first roller bearing is provided on two sidewalls；Deposit cavity 2, is connected to the preheating cavity 1, and plasma results from the deposit cavity 2
It is interior；It is provided with heating plate in the bottom surface of the deposit cavity 2, ITO target and magnet, institute are provided on the two sidewalls of the deposit cavity
The sputter face for stating ITO target is opposite two-by-two, and the magnet is located at the rear portion of the ITO target, and the magnet on the two sidewalls
Magnetic force on the contrary, to form magnetic field between the two sidewalls；The upper opening of the deposit cavity 2 is provided with top in the opening
The opening of the deposit cavity 2 is closed by lid 3, and the underside of the top cover 3 is connected with tool hollow gas transmission plate with dissection
12, the lower surface of the gas transmission plate 12 is uniformly provided with multiple through-holes, so that reaction gas is passed through deposit cavity 2 by the interlayer,
Four walls of the gas transmission plate 12 and center are provided with multiple air inlets, the air inlet and external reaction gas device phase
Even；It is provided with the second roller bearing on the two sidewalls of the deposit cavity 2, second roller bearing is located at the lower section of the ITO target, and with
The height of first roller bearing flushes, and second roller bearing is scalable setting；It is uniformly set on the lower surface of the deposit cavity 2
Several pillars 4 are equipped with, the pillar 4 can move up and down；Cooling chamber 5, is connected to the deposit cavity 2, and the two of the cooling chamber 5
Third roller bearing is provided on side wall, the height of the third roller bearing is flushed with first roller bearing and the second roller bearing；Finished product chamber 6,
It is connected to the cooling chamber 5, and multiple grids 7 are provided in the finished product chamber 6, is more by 6 even partition of finished product chamber
A compartment；Vacuum pump 8 is separately connected with the preheating cavity 1, deposit cavity 2 and cooling chamber 5, to control each chamber
Vacuum degree；Control panel 9 is separately connected, to each chamber with the preheating cavity 1, deposit cavity 2, cooling chamber 5 and vacuum pump 8
Indoor component and vacuum pump 8 are controlled.
In the above scheme, by the way that the vacuum pump being separately connected with preheating cavity, deposit cavity and cooling chamber is arranged, can guarantee
Substrate is preheated and is cooled down in the environment of vacuum, to ensure that the cleannes of substrate surface, conducive to the matter for improving film forming
Amount can guarantee in deposit cavity in addition to reaction gas and target by the way that deposit cavity to be vacuum-treated without other impurities, thus
Further improve the quality of ito thin film.By in the multiple grids of the intracavitary setting of finished product so that finished product it is intracavitary can place it is more
A finished substrate, the convenience that the system of improving uses.By the way that the control panel connecting with each chamber and device is arranged, improve
The convenience that system uses.In the system that the magnetron sputtering of above-mentioned maintenance convenient for safeguarding prepares ito thin film, reaction gas
Enter gas transmission plate by multiple air inlets on gas transmission plate, is then passed through in chamber via the through-hole below gas transmission plate, is ionized production
Raw plasma, bombards the surface of ITO target, forms ito thin film on the surface of the substrate by the ITO target deposition that bombardment is got off,
By the way that magnet is arranged after ITO target, by the magnetic field that magnet generates, plasma is under the Lorentz force action in magnetic field, quilt
It tightly constrains between two targets, to realize high-speed sputtering.By setting reaction gas by several below gas transmission plate
Through-hole sprays so that reaction gas is more uniform in substrate surface distribution, i.e. plasma distribution is more uniform, and then improves
The uniformity of film forming.By the way that the air inlet of multiple reaction gas is arranged in four walls of gas transmission plate and center, to guarantee anti-
Answer gas to enter gas transmission plate by multiple directions, and then guarantee that gas transmission plate reaction gases are uniform first, that is, further ensure by
Through-hole enters the uniformity of the reaction gas of chamber.
In one preferred embodiment, further includes: temperature sensor is controlled by the control panel 9, and is respectively arranged at institute
On the side wall for stating preheating cavity 1, deposit cavity 2 and cooling chamber 5.
In the above scheme, by the way that temperature sensor, Neng Gouzhun are arranged on the side wall of preheating cavity, deposit cavity and cooling chamber
The true indoor temperature of understanding chamber, and then the indoor temperature of each chamber is controlled using control panel as needed.
In one preferred embodiment, the rear portion of the ITO target is connected with cooler.
In the above scheme, by connecting cooler at ITO target rear portion, cooling drop in real time can be carried out to ITO target
Temperature, it is excessively high to avoid target temperature, influence working efficiency.
In one preferred embodiment, the front end of the air inlet is provided with baffle, to form a storage before the air inlet
The indoor reaction gas of the air storing cavity is passed through the gas transmission plate 12 by gas chamber, the intermediate openings of the baffle.
In the above scheme, by the way that baffle is arranged before air inlet, gas storage chamber is formed, so that into the reaction of gas transmission plate
Gas is introduced into air storing cavity room, so that the air pressure of reaction gas obtains certain stabilization, then again by baffle
Opening enters in gas transmission plate, so that the reaction gas stable gas pressure and air-flow into gas transmission plate mitigate, in favor of in each through-hole
The uniformity of outlet is conducive to form a film more uniform so that the gas into deposit cavity is uniform.
In one preferred embodiment, the bottom of the finished product chamber 6 is provided with telescopic platform 10, and the telescopic platform 10 is in full extension
When keep the lowermost compartment of the finished product chamber 6 concordant with the outlet of the cooling chamber 6, the telescopic platform 10 is in complete shrink
Keep the compartment of the top of the finished product chamber 6 concordant with the outlet of the cooling chamber 6.
In the above scheme, by enabling finished product chamber to move up and down in the bottom of finished product chamber setting telescopic platform, so as to
It is placed in the intracavitary different compartments of finished product in the substrate come out by cooling chamber, facilitates the storage of finished product.
In one preferred embodiment, gravity sensor 11, the gravity sensor 11 and institute are provided on the telescopic platform 10
9 communication connection of control panel is stated, the gravity sensor 11 is when the weight for sensing the finished product chamber 6 increases, to the control
Panel 9 processed sends signal, and the control panel 9 controls the height that the telescopic platform 10 stretches 1 compartment upwards.
It in the above scheme, can be by gravity sensor to control plane by the way that gravity sensor is arranged on telescopic platform
Plate sends signal, and then realizes that telescopic platform stretches the height of a compartment upwards often in a compartment after one substrate of placement,
So that the subsequent substrate come out by cooling chamber is placed in the compartment below the compartment.
In one preferred embodiment, the suggestion device with 9 communication connection of control panel is provided on the telescopic platform 10,
The suggestion device is issued to the control panel 9 after 10 full extension of telescopic platform and is prompted.
In the above scheme, by the way that suggestion device is arranged, it can issue and prompt to control panel after a finished product chamber is filled,
In order to which the finished product chamber that user more renews in time is used to hold substrate.
Although the embodiments of the present invention have been disclosed as above, but its is not only in the description and the implementation listed
With it can be fully applied to various fields suitable for the present invention, for those skilled in the art, can be easily
Realize other modification, therefore without departing from the general concept defined in the claims and the equivalent scope, the present invention is simultaneously unlimited
In specific details and legend shown and described herein.
Claims (5)
1. a kind of system that the magnetron sputtering of maintenance convenient for safeguarding prepares ito thin film is used in deposition on substrate ito thin film,
In, comprising:
Substrate is preheated to certain temperature, having heaters, institute is respectively set on the top and bottom of the preheating cavity by preheating cavity
It states and is provided with the first roller bearing on the two sidewalls of preheating cavity；
Deposit cavity, is connected to the preheating cavity, and plasma results from the deposit cavity；It is set in the bottom surface of the deposit cavity
It is equipped with heating plate, ITO target and magnet, two two-phase of sputter face of the ITO target are provided on the two sidewalls of the deposit cavity
Right, the magnet is located at the rear portion of the ITO target, and the magnetic force of the magnet on the two sidewalls is on the contrary, in the two sides
Magnetic field is formed between wall；The upper opening of the deposit cavity is provided with top cover in the opening, the opening of the deposit cavity is closed
It closes, the underside of the top cover is connected with tool hollow gas transmission plate with dissection, and the lower surface of the gas transmission plate uniformly opens up
There are multiple through-holes, so that reaction gas is passed through deposit cavity by the interlayer, four walls of the gas transmission plate and center are respectively provided with
There are multiple air inlets, the air inlet is connected with external reaction gas device；Second is provided on the two sidewalls of the deposit cavity
Roller bearing, second roller bearing is located at the lower section of the ITO target, and flushes with the height of first roller bearing, and described second
Roller bearing is scalable setting；Several pillars are evenly arranged on the lower surface of the deposit cavity, the pillar can move up and down；
Cooling chamber is connected to the deposit cavity, and third roller bearing, the third roller bearing are provided on the two sidewalls of the cooling chamber
Height flushed with first roller bearing and the second roller bearing；
Finished product chamber is connected to the cooling chamber, and the finished product is intracavitary to be provided with multiple grids, and the finished product chamber is uniformly divided
It is divided into multiple compartments；
Vacuum pump is separately connected with the preheating cavity, deposit cavity and cooling chamber, to control the vacuum degree of each chamber；
Control panel is separately connected with the preheating cavity, deposit cavity, cooling chamber and vacuum pump, to the indoor portion of each chamber
Part and vacuum pump are controlled；
Wherein, the bottom of the finished product chamber is provided with telescopic platform, and the telescopic platform makes the finished product chamber in full extension most
The compartment of lower end is concordant with the outlet of the cooling chamber, and the telescopic platform makes the top of the finished product chamber in complete shrink
Compartment is concordant with the outlet of the cooling chamber；Be provided with gravity sensor on the telescopic platform, the gravity sensor with it is described
Control panel communication connection, the gravity sensor is when the weight for sensing the finished product chamber increases, Xiang Suoshu control panel
Signal is sent, the control panel controls the height that the telescopic platform stretches 1 compartment upwards.
2. the system that the magnetron sputtering of maintenance convenient for safeguarding as described in claim 1 prepares ito thin film, wherein further include:
Temperature sensor is controlled by the control panel, and is respectively arranged at the side of the preheating cavity, deposit cavity and cooling chamber
On wall.
3. the system that the magnetron sputtering of maintenance convenient for safeguarding as described in claim 1 prepares ito thin film, wherein the ITO target
The rear portion of material is connected with cooler.
4. the system that the magnetron sputtering of maintenance convenient for safeguarding as described in claim 1 prepares ito thin film, wherein the air inlet
The front end of mouth is provided with baffle, to form a gas storage chamber, the intermediate openings of the baffle, by institute before the air inlet
It states the indoor reaction gas of air storing cavity and is passed through the gas transmission plate.
5. the system that the magnetron sputtering of maintenance convenient for safeguarding as described in claim 1 prepares ito thin film, wherein described flexible
The suggestion device with the control panel communication connection is provided on platform, the suggestion device is after the telescopic platform full extension
It issues and prompts to the control panel.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710288617.1A CN107043916B (en) | 2017-04-27 | 2017-04-27 | The system that the magnetron sputtering of maintenance convenient for safeguarding prepares ito thin film |
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| CN201710288617.1A CN107043916B (en) | 2017-04-27 | 2017-04-27 | The system that the magnetron sputtering of maintenance convenient for safeguarding prepares ito thin film |
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| CN107043916A CN107043916A (en) | 2017-08-15 |
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| CN101962754A (en) * | 2009-07-24 | 2011-02-02 | 鸿富锦精密工业（深圳）有限公司 | Film coating device |
| CN102312208A (en) * | 2011-09-30 | 2012-01-11 | 芜湖长信科技股份有限公司 | Method for preparing indium tin oxide (ITO) film on resin substrate by using magnetron sputtering |
| CN202390535U (en) * | 2011-12-09 | 2012-08-22 | 深圳市创益科技发展有限公司 | Continuous vacuum plating facility with heating device |
| CN103147059A (en) * | 2013-03-29 | 2013-06-12 | 关长文 | Continuous vertical double-sided coating production line |
| CN104746031A (en) * | 2013-12-29 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A sputtering system |
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2017
- 2017-04-27 CN CN201710288617.1A patent/CN107043916B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101962754A (en) * | 2009-07-24 | 2011-02-02 | 鸿富锦精密工业（深圳）有限公司 | Film coating device |
| CN102312208A (en) * | 2011-09-30 | 2012-01-11 | 芜湖长信科技股份有限公司 | Method for preparing indium tin oxide (ITO) film on resin substrate by using magnetron sputtering |
| CN202390535U (en) * | 2011-12-09 | 2012-08-22 | 深圳市创益科技发展有限公司 | Continuous vacuum plating facility with heating device |
| CN103147059A (en) * | 2013-03-29 | 2013-06-12 | 关长文 | Continuous vertical double-sided coating production line |
| CN104746031A (en) * | 2013-12-29 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A sputtering system |
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