CN109385602A - A kind of novel uniform surface shape deposition evaporation coating device and method - Google Patents
A kind of novel uniform surface shape deposition evaporation coating device and method Download PDFInfo
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- CN109385602A CN109385602A CN201810729975.6A CN201810729975A CN109385602A CN 109385602 A CN109385602 A CN 109385602A CN 201810729975 A CN201810729975 A CN 201810729975A CN 109385602 A CN109385602 A CN 109385602A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
Abstract
A kind of novel uniform surface shape deposition evaporation coating device and method, the effect of using circular cover with the specific multiple runner sandwich molds that be connected tos of rectangle in a manner of mixing runner, reach the promotion film thickness uniformity.Equipment design is simple, cost is relatively low, since copper, indium, gallium element steam flow through cover board and the specific multiple connection runner sandwich molds of rectangle are individually deposited with selenium element steam stream in linear manner again, material viscosity can be made, which to influence phenomenon, to be reduced, and is held in the uniformity of vapor deposition processing procedure film product whereby.Uniform surface shape deposition evaporation coating device of the invention is applied to the absorbed layer plated film of vapor deposition CIGS battery, since processing procedure speed is fast and the uniformity of film product improves, is beneficial to the raising of transfer efficiency, and meet the demand of large-scale production.
Description
Technical field
The present invention relates to a kind of novel uniform surface shape deposition evaporation coating device and methods, are applied to HJT heterojunction solar electricity
Pond, the fields such as CIGS thin film solar battery and the organic motor light emitting diode of OLED.
Background technique
The energy demand of current each industry is high, and the energy demand of existing items industry supplies to avoid the occurrence of the energy
The problem of shortage is answered, and ensures sustainable theory, therefore each industry is gradually to utilizing the renewable sources of energy, such as solar-electricity
Pond, as one of renewable sources of energy of hot topic are popular research field instantly at present.
The type of solar battery is in addition to silicon substrate (Silicon) solar battery and GaAs (GaAs) solar battery
Outside, copper indium gallium selenide (CIGS) the solar battery system being made of I-III-VI2 race element be another great potential the sun
Can battery, copper indium gallium selenium solar cell composition lie on a substrate, sequentially form plural layer respectively have different efficacies
Deposition film, general substrate material mainly select containing sodium alkali glass (SLG) or stainless steel (SS), and on the basis of substrate,
From bottom to top be sequentially Mo back electrode layer (Backcontact), CIGS absorbed layer (Absorber), CdS buffer layer (Buffer),
I-ZnO/AZO optical window layer (Window) and Ni/Al upper electrode layer (Frontcontact).Wherein, Mo back electrode layer and i-ZnO/
AZO optical window series of strata are formed through magneto-sputtering process (Sputtering), and CIGS absorbed layer is then through vapor deposition processing procedure
(evaporation) it is formed, finally again through e-beam evaporation deposition Ni/Al upper electrode layer to complete entire copper indium gallium selenide too
Positive energy battery.
CIGS absorbed layer is generally made of selenizing after full sputter, sputter or vapor deposition processing procedure.Full sputter process will be made
Make expensive target and plating rate is slow, cost is high；After sputter selenizing processing procedure mode equally need high target and after
Selenidation process is unable to that selenizing is complete, and efficiency is not also high, and more using equipment, therefore cost can not also reduce；Using vapor deposition
Evaporation material is placed in container by processing procedure, general system, and is heated through heater for those containers, then make each material with
Dotted vapor deposition mode is in forming CIGS thin film on substrate.Dotted vapor deposition is in the function that still can be only achieved uniform vapor deposition under small area
Effect, but so for for it is continuous and have large area it is big substrate, what dotted vapor deposition mode can not then make to be formed CIGS is thin
Film is presented uniform thickness, the general system of vapor deposition point be located at substrate center at, therefore increase with distance, lead to substrate
Edge CIGS thin film thickness much smaller than substrate center place thickness, cause be plated material on generated film thickness and
Inhomogeneities is presented in ingredient, therefore will reduce battery conversion efficiency；Traditional point evaporation source has that plated film area is small, large area is equal
Evenness is excessive, material rate low (< 30%) and maintenance cost it is high the disadvantages of, can not scale of mass production use, there is no at present effective
Large area is deposited and lower-cost mode is suggested.
Summary of the invention
The present invention is to provide a kind of novel uniform surface shape deposition evaporation coating device and method, has while large-area coating film
The uniformity that can guarantee film layer, can be applied to HJT heterojunction solar battery, CIGS thin film solar battery and OLED has
The manufacture of the film layer plated film of the metal or oxide of the components such as electromechanical machine light emitting diode.
The present invention includes circular cover and rectangular specific multiple connection runner interlayers with round metering hole
The mixing runner of box, such as Fig. 1, equipment design is simple, and cost is relatively low, and various composite materials are being deposited using cover board and mixing runner
Processing procedure, the mixing degree of a variety of materials and the uniformity of film layer can be improved, promoted with being conducive to transfer efficiency.
A kind of novel uniform surface shape deposits evaporation coating device, including specific multiple connection runner sandwich molds of ontology, rectangle, incessantly
One cover board, more than one crucible, more than one heater, thermal shield apparatus, substrate and test piece；Thermal shield apparatus is set to this
In vivo, an independent steam flow channel is formed inside thermal shield apparatus；Substrate is set to the bottom of ontology, the runner formed between substrate
It is connected to independent steam flow channel；Crucible is divided into interior crucible and outer crucible, and interior crucible is set in ontology and is wrapped up by thermal shield apparatus,
Outer crucible is set to body exterior, and interior crucible top is connected with the cover board of metering hole；It is specific multiple that cover board top connects rectangle
It is connected to runner sandwich mold, the both ends of the specific multiple connection runner sandwich molds of rectangle are connected to independent steam flow channel；Heater profile exists
The surrounding of the specific multiple runner sandwich molds of rectangle and outer crucible；Test piece be set to the top of ontology and be located at rectangle it is specific multiple
It is connected to the top of runner sandwich mold.
Further, the ontology includes more than one layer of heatshield material.
Further, the material of the specific multiple connection runner sandwich molds of the rectangle is rectangular patch body graphite.
Further, the material of the cover board is round sheet body graphite, for controlling deposition materials steam flow, cover board
Metering hole diameter range is 0.5mm-20mm.
Further, the material of the crucible is graphite outer crucible, the interior crucible of pyrolytic boron nitride (PBN), stainless steel crucible
Or silica crucible；Wherein, pyrolytic boron nitride (PBN) interior crucible is suitable for accommodating copper coin cellulosic material, phosphide element material or gallium element
One or both of material or more, stainless steel or silica crucible are suitable for accommodating selenium element material.
Further, the heater is separately controllable heater, can be selected from RF induction heater, resistance heater
Or infrared heater；The heater profile is in the specific multiple runner sandwich molds of rectangle and the multiple outer crucible surrounding.
Further, the material of the thermal shield apparatus is graphite or refractory material.
Further, the material of the substrate is alkali-free glass or stainless steel.
A kind of method of novel uniform surface shape deposition vapor deposition, includes the following steps:
Step 1, copper, indium, gallium, the selenium element material by purity more than or equal to 99.99 atom % are put into different crucibles,
Middle copper and selenium element material crucible are not necessarily to cover board, and the diameter of phosphide element material crucible cover board metering hole is 1mm-5mm, gallium element material
Material crucible cover plate current limliting bore dia is 5mm-20mm；
Step 2, deposition evaporation coating device ontology is put into vapor deposition cavity, cavity background pressure will be deposited with vacuum-pumping system
Power is evacuated to 5-6 × 10-6Torr heats rectangular-shaped specific multiple runner sandwich molds and is heated to 1300 DEG C -1450 DEG C, while gallium member
Cellulosic material crucible is heated to 1250 DEG C -1400 DEG C, and copper material crucible is heated to 1250 DEG C -1400 DEG C, phosphide element material earthenware
Crucible heats 1200 DEG C -1350 DEG C, independently of this external selenium element material crucible external heat to 200 DEG C -400 DEG C；
Step 3, selenium element material vapor stream is filled by matrix hence into body interior, and through heat shielding by body bottom portion
The independent flow passage isolated is set mutually to mix with gallium, copper, the phosphide element material vapor stream in the specific multiple runner sandwich molds of rectangle,
Uniform surface shape deposition vapor stream is formed, finally forms the CIGS absorbed layer that uniform 1500-2500nm thickness is deposited in test piece.
The utility model has the advantages that compared with prior art, the present invention using high stable material and the mode of thermal evaporation, have maintenance at
This is low, the uniformity is high, plated film area is big, plating rate is high and material rate high (> 80%) the advantages of, since stock utilization is high and only
Plated film is carried out using raw material, is not made into complicated target, therefore processing procedure cost of material is greatly reduced, and is conducive to related film layer
Large-scale production.
Detailed description of the invention
Fig. 1: the front view of present apparatus structure；
Fig. 2: the left view of present apparatus structure；
In figure: 1- ontology；The specific multiple connection runner sandwich molds of 2- rectangle；3- cover board；4- crucible；5- heater；6- heat
Screening arrangement；7- matrix；8- test piece.
Specific embodiment
It is below several preferred embodiments for lifting the present invention, only for the composition, feature and purpose that the present invention is further explained
Person as described below, is only that and illustrates the preferred embodiments of the invention, the range being not intended to limit the invention, therefore all has with this hair
Based on bright spirit, and it is the modification or change of any form of the present invention, all still should belong to the scope that the invention is intended to protect.
A kind of novel uniform surface shape deposition evaporation coating device, comprising: the specific multiple connection runner sandwich molds 2 of ontology 1, rectangle,
More than one cover board 3, more than one crucible 4, more than one heater 5, thermal shield apparatus 6, substrate 7 and test piece 8；Heat shielding dress
It sets 6 to be set in ontology 1, forms an independent steam flow channel inside thermal shield apparatus 6；Substrate 7 is set to the bottom of ontology 1, base
The runner formed between plate 7 is connected to independent steam flow channel；4 crucible of crucible is divided into interior crucible and outer crucible, and interior crucible is set to this
It is wrapped up in body 1 and by thermal shield apparatus 6, outer crucible is set to outside ontology 1, and interior crucible top is connected with the cover board of metering hole
3；The specific multiple connection runner sandwich molds 2 of rectangle, specific multiple 2 both ends of the connection runner sandwich mold connections of rectangle are connected on cover board 3
Independent steam flow channel；Heater 5 is distributed in the surrounding of the specific multiple runner sandwich molds 2 of rectangle and outer crucible；Test piece 8 is set to
The top of ontology 1 and the top for being located at the specific multiple connection runner sandwich molds 2 of rectangle.
Ontology 1, material are more than one layer of heatshield material, for completely cutting off the opening of the specific multiple specific connection runners of rectangle
The radiant heat of sandwich mold and more than one crucible.
The specific multiple connection runner sandwich molds 2 of rectangle, material are rectangular patch body graphite, and copper, indium, the gallium of evaporation deposit material
Expect that steam stream is mixed to form uniform linear CIGS deposition vapor stream in this connection runner mixing discharge, then with selenium element steam stream.
More than one cover board 3, material is round sheet body graphite, for controlling deposition materials steam flow, cover board current limliting
Bore dia range is 0.5mm-20mm.
More than one crucible 4, material can be graphite outer crucible, the interior crucible of pyrolytic boron nitride (PBN), 304 stainless steel crucibles
Or silica crucible, wherein crucible is used to accommodate one of copper coin cellulosic material, phosphide element material or gallium element material or two in PBN
Kind or more material, 304 stainless steels or silica crucible be used to accommodate selenium element material.
A unlikely heater 5, be separately controllable heater, can be RF induction heater, resistance heater or
At least one of infrared heater, the heater profile is in the specific multiple runner sandwich molds of rectangle and the multiple outer earthenware
Crucible surrounding, which heats the specific multiple runner sandwich molds of the rectangle and multiple crucibles until temperature is higher than deposition materials
Condensation point so that each of interior crucible deposition materials are all evaporated, and then enter the specific multiple runner sandwich molds of the rectangle with
And the steam flow channel that another independent thermal shield apparatus isolates.
Thermal shield apparatus 6, material be graphite or refractory material, for provide the specific multiple runner sandwich molds of the rectangle with
And at least one of multiple crucibles are locally thermally isolated, and provide another independent steam flow channel, make selenium element material vapor stream with
It is mutually mixed from the gallium, copper, phosphide element material vapor stream of the specific multiple runner sandwich molds of rectangle.
Substrate 7, material can be alkali-free glass or stainless steel, enter ontology by body bottom portion as selenium element material vapor stream
Internal runner.
Test piece 8, the steam stream for mixed selenium, gallium, copper, phosphide element material, which is formed, is deposited uniform CIGS absorbed layer
Place.
High uniform surface shape deposition evaporation coating device of the invention is applied to the absorbed layer plated film of CIGS battery, round using having
The circular cover of metering hole and rectangular-shaped specific multiple connection runners, and then mix, formation obtains uniform surface shape deposition and steams
The mode of steam flow is implemented to be deposited.
A kind of method of novel uniform surface shape deposition vapor deposition, includes the following steps:
Step 1, copper, indium, gallium, the selenium element material of the atom by purity more than or equal to 99.99% are put into different crucibles,
Wherein copper and selenium element material crucible are not necessarily to cover board, and the diameter of phosphide element material crucible cover board metering hole is 1mm-5mm, gallium element
Material crucible cover board current limliting bore dia is 5mm-20mm；
Step 2, deposition evaporation coating device ontology is put into vapor deposition cavity, cavity background pressure will be deposited with vacuum-pumping system
Power is evacuated to 5-6 × 10-6Torr reheats rectangular-shaped specific multiple runner sandwich molds and is heated to 1300 DEG C -1450 DEG C, while gallium
Element material crucible is heated to 1250 DEG C -1400 DEG C, and copper material crucible is heated to 1250 DEG C -1400 DEG C, phosphide element material
Crucible heat 1200 DEG C -1350 DEG C, independently of vapor deposition cavity outside selenium element material crucible independently of vapor deposition cavity external heat extremely
200℃-400℃；
Step 3, using alkali-free glass or stainless steel as substrate (basic specification: 300mm × 300mm × 0.12mm), make selenium
Element material steam stream enters body interior by body bottom portion, and the independent flow passage isolated through thermal shield apparatus and rectangle are specific
Gallium, copper, phosphide element material vapor stream in multiple runner sandwich molds mutually mix, and form uniform surface shape deposition vapor stream, finally
The CIGS absorbed layer that uniform 1500-2500nm thickness is deposited is formed in test piece.
Effective clean width of the CIGS absorbed layer of the formation is at least up to 15cm, and lateral length can not be by except vapor deposition dress
Limitation other than the length set.
Next, providing some specific embodiment parameters to the method for the present invention, and carried out as a comparison case with the prior art
Experimental result comparative analysis.
Embodiment 1:
Its uniform linear sedimentary origin evaporation coating device, it is specific multiple using the circular cover and rectangle with round metering hole
Connection runner sandwich mold is implemented to be deposited in a manner of runner to mix.
Copper, indium, gallium, selenium element material first by purity more than or equal to 99.99 atom % are put into different crucibles, wherein
Copper and selenium element material crucible are not necessarily to cover board, and phosphide element material crucible cover plate diameter is 1mm, gallium element material crucible cover plate diameter
For 5mm, 5-6 × 10 are evacuated to for cavity background pressure is deposited with vacuum-pumping system-6torr；
The sandwich mold for being built-in with the specific multiple runners of rectangle is heated to 1400 DEG C again, gallium element material crucible is heated to
1350 DEG C, copper material crucible is heated to 1380 DEG C, and phosphide element material crucible is heated to 1270 DEG C, independently of vapor deposition cavity outside
Selenium element material crucible be heated to 300 DEG C；
Then it using stainless steel as substrate, flows into selenium element material vapor stream from body bottom portion, is isolated through thermal shield apparatus
Gallium, copper, the phosphide element material vapor stream of independent flow passage out and the specific multiple runner sandwich molds of rectangle mutually mix, and are formed uniform
Linear deposition vapor stream is deposited on substrate (basic specification: 300mm × 300mm × 0.12mm), deposition thickness 1500nm, and
Measure the uniformity of CIGS absorbed layer film layer.
Embodiment 2:
Its uniform linear sedimentary origin evaporation coating device, using the circular cover and the specific multiple companies of rectangle with round metering hole
Passage flow duct sandwich mold is implemented to be deposited in a manner of runner to mix.
Copper, indium, gallium, selenium element material first by purity more than or equal to 99.99 atom % are put into different crucibles, wherein
Copper and selenium element material crucible are not necessarily to cover board, and phosphide element material crucible cover plate diameter is 2mm, gallium element material crucible cover plate diameter
For 5mm, 5-6 × 10 are evacuated to for cavity background pressure is deposited with vacuum-pumping system-6torr；
It reheating the specific multiple runner sandwich molds of rectangle and is heated to 1400 DEG C, gallium element material crucible is heated to 1350 DEG C,
Copper material crucible is heated to 1380 DEG C, and phosphide element material crucible is heated to 1270 DEG C, and selenium element material crucible is independently of steaming
Cavity external heat is plated to 300 DEG C；
Then it using stainless steel as substrate, flows into selenium element material vapor stream from body bottom portion, is isolated through thermal shield apparatus
Independent flow passage out is mutually mixed with gallium, copper, phosphide element material vapor stream from the specific multiple runner sandwich molds of rectangle, is formed
Uniform linear deposition vapor stream, and (basic specification: 300mm × 300mm × 0.12mm) is deposited on substrate, deposition thickness reaches
1500nm, and measure the uniformity of CIGS absorbed layer film layer.
Embodiment 3:
Its uniform linear sedimentary origin evaporation coating device, it is specific multiple using the circular cover and rectangle with round metering hole
Connection runner sandwich mold is implemented to be deposited in a manner of runner to mix.
Copper, indium, gallium, selenium element material first by purity more than or equal to 99.99 atom % are put into different crucibles, wherein
Copper and selenium element material crucible are not necessarily to cover board, and phosphide element material crucible cover plate diameter is 3mm, gallium element material crucible cover plate diameter
For 5mm, 5-6 × 10 are evacuated to for cavity background pressure is deposited with vacuum-pumping system-6torr；
It reheating the specific multiple runner sandwich molds of rectangle and is heated to 1400 DEG C, gallium element material crucible is heated to 1350 DEG C,
Copper material crucible is heated to 1380 DEG C, and phosphide element material crucible is heated to 1270 DEG C, and selenium element material crucible is independently of steaming
Cavity external heat is plated to 300 DEG C；
Then it using stainless steel as substrate, flows into selenium element material vapor stream from body bottom portion, is isolated through thermal shield apparatus
Gallium, copper, the phosphide element material vapor stream of independent flow passage out and the specific multiple runner sandwich molds of rectangle mutually mix, and are formed uniform
Linear deposition vapor stream is deposited on substrate (basic specification: 300mm × 300mm × 0.12mm), and deposition thickness reaches
1500nm, and measure the uniformity of CIGS absorbed layer film layer.
Embodiment 4:
Its uniform linear sedimentary origin evaporation coating device, it is specific multiple using the circular cover and rectangle with round metering hole
Connection runner sandwich mold is implemented to be deposited in a manner of runner to mix.
Copper, indium, gallium, selenium element material first by purity more than or equal to 99.99 atom % are put into different crucibles, wherein
Copper and selenium element material crucible are not necessarily to cover board, and phosphide element material crucible cover plate diameter is 4mm, gallium element material crucible cover plate diameter
For 5mm, 5-6 × 10 are evacuated to for cavity background pressure is deposited with vacuum-pumping system-6torr；
It reheating the specific multiple runner sandwich molds of rectangle and is heated to 1400 DEG C, gallium element material crucible is heated to 1350 DEG C,
Copper material crucible is heated to 1380 DEG C, and phosphide element material crucible is heated to 1270 DEG C, and selenium element material crucible is independently of steaming
Cavity external heat is plated to 300 DEG C；
Then it using stainless steel as substrate, flows into selenium element material vapor stream from body bottom portion, is isolated through thermal shield apparatus
Gallium, copper, the phosphide element material vapor stream of independent flow passage out and the specific multiple runner sandwich molds of rectangle mutually mix, and are formed uniform
Linear deposition vapor stream is deposited on substrate (basic specification: 300mm × 300mm × 0.12mm), and deposition thickness reaches
1500nm, and measure the uniformity of CIGS absorbed layer film layer.
Embodiment 5:
Its uniform linear sedimentary origin evaporation coating device, it is specific multiple using the circular cover and rectangle with round metering hole
Connection runner sandwich mold is implemented to be deposited in a manner of runner to mix.
Copper, indium, gallium, selenium element material first by purity more than or equal to 99.99 atom % are put into different crucibles, wherein
Copper and selenium element material crucible are not necessarily to cover board, and phosphide element material crucible cover plate diameter is 5mm, gallium element material crucible cover plate diameter
For 5mm, 5-6 × 10 are evacuated to for cavity background pressure is deposited with vacuum-pumping system-6torr；
It reheating the specific multiple runner sandwich molds of rectangle and is heated to 1400 DEG C, gallium element material crucible is heated to 1350 DEG C,
Copper material crucible is heated to 1380 DEG C, and phosphide element material crucible is heated to 1270 DEG C, and selenium element material crucible is independently of steaming
Cavity external heat is plated to 300 DEG C；
Then it using stainless steel as substrate, flows into selenium element material vapor stream from body bottom portion, is isolated through thermal shield apparatus
Gallium, copper, the phosphide element material vapor stream of independent flow passage out and the specific multiple runner sandwich molds of rectangle mutually mix, and are formed uniform
Linear deposition vapor stream is deposited on substrate (basic specification: 300mm × 300mm × 0.12mm), deposition thickness 1500nm, and
Measure the uniformity of CIGS absorbed layer film layer.
Embodiment 6:
Its uniform linear sedimentary origin evaporation coating device, it is specific multiple using the circular cover and rectangle with round metering hole
Connection runner sandwich mold is implemented to be deposited in a manner of runner to mix.
Copper, indium, gallium, selenium element material first by purity more than or equal to 99.99 atom % are put into different crucibles, wherein
Copper and selenium element material crucible are not necessarily to cover board, and phosphide element material crucible cover plate diameter is 2mm, gallium element material crucible cover plate diameter
For 10mm, 5-6 × 10 are evacuated to for cavity background pressure is deposited with vacuum-pumping system-6torr；
It reheating the specific multiple runner sandwich molds of rectangle and is heated to 1400 DEG C, gallium element material crucible is heated to 1350 DEG C,
Copper material crucible is heated to 1380 DEG C, and phosphide element material crucible is heated to 1270 DEG C, and selenium element material crucible is independently of steaming
Cavity external heat is plated to 300 DEG C；
Then it using stainless steel as substrate, flows into selenium element material vapor stream from body bottom portion, is isolated through thermal shield apparatus
Gallium, copper, the phosphide element material vapor stream of independent flow passage out and the specific multiple runner sandwich molds of rectangle mutually mix, and are formed uniform
Linear deposition vapor stream is deposited on substrate (basic specification: 300mm × 300mm × 0.12mm), deposition thickness 1500nm, and
Measure the uniformity of CIGS absorbed layer film layer.
Embodiment 7:
Its uniform linear sedimentary origin evaporation coating device, it is specific multiple using the circular cover and rectangle with round metering hole
Connection runner sandwich mold is implemented to be deposited in a manner of runner to mix.
Copper, indium, gallium, selenium element material first by purity more than or equal to 99.99 atom % are put into different crucibles, wherein
Copper and selenium element material crucible are not necessarily to cover board, and phosphide element material crucible cover plate diameter is 2mm, gallium element material crucible cover plate diameter
For 15mm, 5-6 × 10 are evacuated to for cavity background pressure is deposited with vacuum-pumping system-6torr；
It reheating the specific multiple runner sandwich molds of rectangle and is heated to 1400 DEG C, gallium element material crucible is heated to 1350 DEG C,
Copper material crucible is heated to 1380 DEG C, and phosphide element material crucible is heated to 1270 DEG C, and selenium element material crucible is independently of steaming
Cavity external heat is plated to 300 DEG C；
Then it using stainless steel as substrate, flows into selenium element material vapor stream from body bottom portion, is isolated through thermal shield apparatus
Gallium, copper, the phosphide element material vapor stream of independent flow passage out and the specific multiple runner sandwich molds of rectangle mutually mix, and are formed uniform
Linear deposition vapor stream is deposited on substrate (basic specification: 300mm × 300mm × 0.12mm), deposition thickness 1500nm, and
Measure the uniformity of CIGS absorbed layer film layer.
Embodiment 8:
Its uniform linear sedimentary origin evaporation coating device, it is specific multiple using the circular cover and rectangle with round metering hole
Connection runner sandwich mold is implemented to be deposited in a manner of runner to mix.
Copper, indium, gallium, selenium element material first by purity more than or equal to 99.99 atom % are put into different crucibles, wherein
Copper and selenium element material crucible are not necessarily to cover board, and phosphide element material crucible cover plate diameter is 2mm, gallium element material crucible cover plate diameter
For 20mm, 5-6 × 10 are evacuated to for cavity background pressure is deposited with vacuum-pumping system-6torr；
It reheating the specific multiple runner sandwich molds of rectangle and is heated to 1400 DEG C, gallium element material crucible is heated to 1350 DEG C,
Copper material crucible is heated to 1380 DEG C, and phosphide element material crucible is heated to 1270 DEG C, and selenium element material crucible is independently of steaming
Cavity external heat is plated to 300 DEG C；
Then it using stainless steel as substrate, flows into selenium element material vapor stream from body bottom portion, is isolated through thermal shield apparatus
Gallium, copper, the phosphide element material vapor stream of independent flow passage out and the specific multiple runner sandwich molds of rectangle mutually mix, and are formed uniform
Linear deposition vapor stream is deposited on substrate (basic specification: 300mm × 300mm × 0.12mm), deposition thickness 1500nm, and
Measure the uniformity of CIGS absorbed layer film layer.
Embodiment 9:
Its uniform linear sedimentary origin evaporation coating device, it is specific multiple using the circular cover and rectangle with round metering hole
Connection runner sandwich mold mixing is implemented to be deposited in a manner of runner.
Copper, indium, gallium, selenium element material first by purity more than or equal to 99.99 atom % are put into different crucibles, wherein
Copper and selenium element material crucible are not necessarily to cover board, and phosphide element material crucible cover plate diameter is 3mm, gallium element material crucible cover plate diameter
For 10mm, 5-6 × 10 are evacuated to for cavity background pressure is deposited with vacuum-pumping system-6torr；
It reheating the specific multiple runner sandwich molds of rectangle and is heated to 1400 DEG C, gallium element material crucible is heated to 1350 DEG C,
Copper material crucible is heated to 1380 DEG C, and phosphide element material crucible is heated to 1270 DEG C, and selenium element material crucible is independently of steaming
Cavity external heat is plated to 300 DEG C；
Then it using stainless steel as substrate, flows into selenium element material vapor stream from body bottom portion, is isolated through thermal shield apparatus
Gallium, copper, the phosphide element material vapor stream of independent flow passage out and the specific multiple runner sandwich molds of rectangle mutually mix, and are formed uniform
Linear deposition vapor stream is deposited on substrate (basic specification: 300mm × 300mm × 0.12mm), deposition thickness 1500nm, and
Measure CIGS absorbed layer membrane uniformity.
Embodiment 10:
Its uniform linear sedimentary origin evaporation coating device, it is specific multiple using the circular cover and rectangle with round metering hole
Connection runner sandwich mold is implemented to be deposited in a manner of runner to mix.
Copper, indium, gallium, selenium element material first by purity more than or equal to 99.99 atom % are put into different crucibles, wherein
Copper and selenium element material crucible are not necessarily to cover board, and phosphide element material crucible cover plate diameter is 3mm, gallium element material crucible cover plate diameter
For 15mm, 5-6 × 10 are evacuated to for cavity background pressure is deposited with vacuum-pumping system-6torr；
It reheating the specific multiple runner sandwich molds of rectangle and is heated to 1400 DEG C, gallium element material crucible is heated to 1350 DEG C,
Copper material crucible is heated to 1380 DEG C, and phosphide element material crucible is heated to 1270 DEG C, and selenium element material crucible is independently of steaming
Cavity external heat is plated to 300 DEG C；
Then it using stainless steel as substrate, flows into selenium element material vapor stream from body bottom portion, is isolated through thermal shield apparatus
Gallium, copper, the phosphide element material vapor stream of independent flow passage out and the specific multiple runner sandwich molds of rectangle mutually mix, and are formed uniform
Linear deposition vapor stream is deposited on substrate (basic specification: 300mm × 300mm × 0.12mm), deposition thickness 1500nm, and
Measure the uniformity of CIGS absorbed layer film layer.
Embodiment 11:
Its uniform linear sedimentary origin evaporation coating device, it is specific multiple using the circular cover and rectangle with round metering hole
Connection runner sandwich mold is implemented to be deposited in a manner of runner to mix.
Copper, indium, gallium, selenium element material first by purity more than or equal to 99.99 atom % are put into different crucibles, wherein
Copper and selenium element material crucible are not necessarily to cover board, and phosphide element material crucible cover plate diameter is 3mm, gallium element material crucible cover plate diameter
For 20mm, 5-6 × 10 are evacuated to for cavity background pressure is deposited with vacuum-pumping system-6torr；
It reheating the specific multiple runner sandwich molds of rectangle and is heated to 1400 DEG C, gallium element material crucible is heated to 1350 DEG C,
Copper material crucible is heated to 1380 DEG C, and phosphide element material crucible is heated to 1270 DEG C, and selenium element material crucible is independently of steaming
Cavity external heat is plated to 300 DEG C；
Then it using stainless steel as substrate, flows into selenium element material vapor stream from body bottom portion, is isolated through thermal shield apparatus
Gallium, copper, the phosphide element material vapor stream of independent flow passage out and the specific multiple runner sandwich molds of rectangle mutually mix, and are formed uniform
Linear deposition vapor stream is deposited on substrate (basic specification: 300mm × 300mm × 0.12mm), deposition thickness 1500nm, and
Measure the uniformity of CIGS absorbed layer film layer.
Embodiment 12:
Its uniform linear sedimentary origin evaporation coating device, it is specific multiple using the circular cover and rectangle with round metering hole
Connection runner sandwich mold is implemented to be deposited in a manner of runner to mix.
Copper, indium, gallium, selenium element material first by purity more than or equal to 99.99 atom % are put into different crucibles, wherein
Copper and selenium element material crucible are not necessarily to cover board, and phosphide element material crucible cover plate diameter is 4mm, gallium element material crucible cover plate diameter
For 10mm, 5-6 × 10 are evacuated to for cavity background pressure is deposited with vacuum-pumping system-6torr；
It reheating the specific multiple runner sandwich molds of rectangle and is heated to 1400 DEG C, gallium element material crucible is heated to 1350 DEG C,
Copper material crucible is heated to 1380 DEG C, and phosphide element material crucible is heated to 1270 DEG C, and selenium element material crucible is independently of steaming
Cavity external heat is plated to 300 DEG C；
Then it using stainless steel as substrate, flows into selenium element material vapor stream from body bottom portion, is isolated through thermal shield apparatus
Gallium, copper, the phosphide element material vapor stream of independent flow passage out and the specific multiple runner sandwich molds of rectangle mutually mix, and are formed uniform
Linear deposition vapor stream is deposited on substrate (basic specification: 300mm × 300mm × 0.12mm), deposition thickness 1500nm, and
Measure the uniformity of CIGS absorbed layer film layer.
Embodiment 13:
Its uniform linear sedimentary origin evaporation coating device, it is specific multiple using the circular cover and rectangle with round metering hole
Connection runner sandwich mold is implemented to be deposited in a manner of runner to mix.
Copper, indium, gallium, selenium element material first by purity more than or equal to 99.99 atom % are put into different crucibles, wherein
Copper and selenium element material crucible are not necessarily to cover board, and phosphide element material crucible cover plate diameter is 4mm, gallium element material crucible cover plate diameter
For 15mm, 5-6 × 10 are evacuated to for cavity background pressure is deposited with vacuum-pumping system-6torr；
It reheating the specific multiple runner sandwich molds of rectangle and is heated to 1400 DEG C, gallium element material crucible is heated to 1350 DEG C,
Copper material crucible is heated to 1380 DEG C, and phosphide element material crucible is heated to 1270 DEG C, and selenium element material crucible is independently of steaming
Cavity external heat is plated to 300 DEG C；
Then it using stainless steel as substrate, flows into selenium element material vapor stream from body bottom portion, is isolated through thermal shield apparatus
Gallium, copper, the phosphide element material vapor stream of independent flow passage out and the specific multiple runner sandwich molds of rectangle mutually mix, and are formed uniform
Linear deposition vapor stream is deposited on substrate (basic specification: 300mm × 300mm × 0.12mm), deposition thickness 1500nm, and
Measure the uniformity of CIGS absorbed layer film layer.
Embodiment 14:
Its uniform linear sedimentary origin evaporation coating device, it is specific multiple using the circular cover and rectangle with round metering hole
Connection runner sandwich mold is implemented to be deposited in a manner of runner to mix.
Copper, indium, gallium, selenium element material first by purity more than or equal to 99.99 atom % are put into different crucibles, wherein
Copper and selenium element material crucible are not necessarily to cover board, and phosphide element material crucible cover plate diameter is 4mm, gallium element material crucible cover plate diameter
For 20mm, 5-6 × 10 are evacuated to for cavity background pressure is deposited with vacuum-pumping system-6torr；
It reheating the specific multiple runner sandwich molds of rectangle and is heated to 1400 DEG C, gallium element material crucible is heated to 1350 DEG C,
Copper material crucible is heated to 1380 DEG C, and phosphide element material crucible is heated to 1270 DEG C, and selenium element material crucible is independently of steaming
Cavity external heat is plated to 300 DEG C；
Then it using stainless steel as substrate, flows into selenium element material vapor stream from body bottom portion, is isolated through thermal shield apparatus
Gallium, copper, the phosphide element material vapor stream of independent flow passage out and the specific multiple runner sandwich molds of rectangle mutually mix, and are formed uniform
Linear deposition vapor stream is deposited on substrate (basic specification: 300mm × 300mm × 0.12mm), deposition thickness 1500nm, and
Measure the uniformity of CIGS absorbed layer film layer.
Embodiment 15:
Its uniform linear sedimentary origin evaporation coating device, it is specific multiple using the circular cover and rectangle with round metering hole
Connection runner sandwich mold is implemented to be deposited in a manner of runner to mix.
Copper, indium, gallium, selenium element material first by purity more than or equal to 99.99 atom % are put into different crucibles, wherein
Copper and selenium element material crucible are not necessarily to cover board, and phosphide element material crucible cover plate diameter is 5mm, gallium element material crucible cover plate diameter
For 10mm, 5-6 × 10 are evacuated to for cavity background pressure is deposited with vacuum-pumping system-6torr；
It reheating the specific multiple runner sandwich molds of rectangle and is heated to 1400 DEG C, gallium element material crucible is heated to 1350 DEG C,
Copper material crucible is heated to 1380 DEG C, and phosphide element material crucible is heated to 1270 DEG C, and selenium element material crucible is independently of steaming
Cavity external heat is plated to 300 DEG C；
Then it using stainless steel as substrate, flows into selenium element material vapor stream from body bottom portion, is isolated through thermal shield apparatus
Gallium, copper, the phosphide element material vapor stream of independent flow passage out and the specific multiple runner sandwich molds of rectangle mutually mix, and are formed uniform
Linear deposition vapor stream is deposited on substrate (basic specification: 300mm × 300mm × 0.12mm), deposition thickness 1500nm, and
Measure the uniformity of CIGS absorbed layer film layer.
Embodiment 16:
Its uniform linear sedimentary origin evaporation coating device, it is specific multiple using the circular cover and rectangle with round metering hole
Connection runner sandwich mold mixing runner mode is implemented to be deposited.
Copper, indium, gallium, selenium element material first by purity more than or equal to 99.99 atom % are put into different crucibles, wherein
Copper and selenium element material crucible are not necessarily to cover board, and phosphide element material crucible cover plate diameter is 5mm, gallium element material crucible cover plate diameter
For 15mm, 5-6 × 10 are evacuated to for cavity background pressure is deposited with vacuum-pumping system-6torr；
It reheating the specific multiple runner sandwich molds of rectangle and is heated to 1400 DEG C, gallium element material crucible is heated to 1350 DEG C,
Copper material crucible is heated to 1380 DEG C, and phosphide element material crucible is heated to 1270 DEG C, and selenium element material crucible is independently of steaming
Cavity external heat is plated to 300 DEG C；
Then it using stainless steel as substrate, flows into selenium element material vapor stream from body bottom portion, is isolated through thermal shield apparatus
Gallium, copper, the phosphide element material vapor stream of independent flow passage out and the specific multiple runner sandwich molds of rectangle mutually mix, and are formed uniform
Linear deposition vapor stream is deposited on substrate (basic specification: 300mm × 300mm × 0.12mm), deposition thickness 1500nm, and
Measure the uniformity of CIGS absorbed layer film layer.
Embodiment 17:
Its uniform linear sedimentary origin evaporation coating device, it is specific multiple using the circular cover and rectangle with round metering hole
Connection runner sandwich mold is implemented to be deposited in a manner of runner to mix.
Copper, indium, gallium, selenium element material first by purity more than or equal to 99.99 atom % are put into different crucibles, wherein
Copper and selenium element material crucible are not necessarily to cover board, and phosphide element material crucible cover plate diameter is 5mm, gallium element material crucible cover plate diameter
For 20mm, 5-6 × 10 are evacuated to for cavity background pressure is deposited with vacuum-pumping system-6torr；
It reheating the specific multiple runner sandwich molds of rectangle and is heated to 1400 DEG C, gallium element material crucible is heated to 1350 DEG C,
Copper material crucible is heated to 1380 DEG C, and phosphide element material crucible is heated to 1270 DEG C, and selenium element material crucible is independently of steaming
Cavity external heat is plated to 300 DEG C；
Then it using stainless steel as substrate, flows into selenium element material vapor stream from body bottom portion, is isolated through thermal shield apparatus
Gallium, copper, the phosphide element material vapor stream of independent flow passage out and the specific multiple runner sandwich molds of rectangle mutually mix, and are formed uniform
Linear deposition vapor stream is deposited on substrate (basic specification: 300mm × 300mm × 0.12mm), deposition thickness 1500nm, and
Measure the uniformity of CIGS absorbed layer film layer.
Comparative example 1:
CIGS absorbing membranous layer is deposited with stainless steel substrate 300mm × 300mm × 0.12mm, but lacks cover board and mixed flow
Road mode is fabricated to CIGS thin film solar battery obsorbing layer and measures the uniformity of its film layer.
The uniformity of CIGS thin film solar absorbing layer film layer made from each embodiment and comparative example is as shown in the table:
It can be seen that from upper table result and vapor deposition implemented using uniform linear sedimentary origin evaporation coating device of the invention, CIGS is thin
Film solar cell absorbed layer membrane uniformity is higher than no cover board and mixes the CIGS thin film solar absorbing layer of runner, this hair
Bright uniform surface shape deposition evaporation coating device is applied to the production of CIGS thin film solar battery obsorbing layer, and having can production.
Claims (9)
1. a kind of novel uniform surface shape deposits evaporation coating device, including the specific multiple connection runner sandwich molds of ontology, rectangle, Bu Zhiyi
A cover board, more than one crucible, more than one heater, thermal shield apparatus, substrate and test piece；Thermal shield apparatus is set to ontology
It is interior, an independent steam flow channel is formed inside thermal shield apparatus；Substrate is set to the bottom of ontology, and the runner formed between substrate connects
Lead to independent steam flow channel；Crucible is divided into interior crucible and outer crucible, and interior crucible is set in ontology and is wrapped up by thermal shield apparatus, outside
Crucible is set to body exterior, and interior crucible top is connected with the cover board of metering hole；Cover board top connects the specific multiple companies of rectangle
The both ends of passage flow duct sandwich mold, the specific multiple connection runner sandwich molds of rectangle are connected to independent steam flow channel；Heater profile is in square
The surrounding of the specific multiple runner sandwich molds of shape and outer crucible；Test piece is set to the top of ontology and is located at the specific multiple companies of rectangle
The top of passage flow duct sandwich mold.
2. novel uniform surface shape according to claim 1 deposits evaporation coating device, it is characterised in that: the ontology includes more than
One layer of heatshield material.
3. novel uniform surface shape according to claim 1 deposits evaporation coating device, it is characterised in that: the rectangle is specific multiple
The material for being connected to runner sandwich mold is rectangular patch body graphite.
4. novel uniform surface shape according to claim 1 deposits evaporation coating device, it is characterised in that: the material of the cover board is
Round sheet body graphite, metering hole diameter range are 0.5mm-20mm.
5. novel uniform surface shape according to claim 1 deposits evaporation coating device, it is characterised in that: the material of the crucible is
Graphite outer crucible, the interior crucible of pyrolytic boron nitride (PBN), stainless steel crucible or silica crucible；Wherein, in pyrolytic boron nitride (PBN)
Crucible is suitable for accommodating one or both of copper coin cellulosic material, phosphide element material or gallium element material or more, stainless steel or
Silica crucible is suitable for accommodating selenium element material.
6. novel uniform surface shape according to claim 1 deposits evaporation coating device, it is characterised in that: the heater is can be single
The heater solely controlled, selected from least one of RF induction heater, resistance heater or infrared heater.
7. novel uniform surface shape according to claim 1 deposits evaporation coating device, it is characterised in that: the thermal shield apparatus
Material is graphite or refractory material.
8. novel uniform surface shape according to claim 1 deposits evaporation coating device, it is characterised in that: the material of the substrate is
Alkali-free glass or stainless steel.
9. a kind of method of novel uniform surface shape deposition vapor deposition, it is characterised in that include the following steps:
Step 1, copper, indium, gallium, the selenium element material by purity more than or equal to 99.99 atom % are put into different crucibles, wherein copper
It is not necessarily to cover board with selenium element material crucible, the diameter of phosphide element material crucible cover board metering hole is 1mm-5mm, gallium element material earthenware
Crucible cover board current limliting bore dia is 5mm-20mm；
Step 2, deposition evaporation coating device ontology is put into vapor deposition cavity, cavity background pressure will be deposited with vacuum-pumping system and taken out
To 5-6 × 10-6Torr heats rectangular-shaped specific multiple runner sandwich molds and is heated to 1300 DEG C -1450 DEG C, while gallium element material
Material crucible is heated to 1250 DEG C -1400 DEG C, and copper material crucible is heated to 1250 DEG C -1400 DEG C, and phosphide element material crucible adds
1200 DEG C -1350 DEG C of heat is heated to 200 DEG C -400 DEG C independently of this external selenium element material outer crucible；
Step 3, selenium element material vapor stream by body bottom portion by matrix hence into body interior, and through thermal shield apparatus every
The independent flow passage separated out is mutually mixed with gallium, copper, the phosphide element material vapor stream in the specific multiple runner sandwich molds of rectangle, is formed
Uniform surface shape deposition vapor stream finally forms the CIGS absorbed layer that uniform 1500-2500nm thickness is deposited in test piece.
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