CN202246841U - Sputtering device for preparing nano silicon film by medium-frequency magnetic control sputtering method - Google Patents
Sputtering device for preparing nano silicon film by medium-frequency magnetic control sputtering method Download PDFInfo
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- CN202246841U CN202246841U CN2011202318383U CN201120231838U CN202246841U CN 202246841 U CN202246841 U CN 202246841U CN 2011202318383 U CN2011202318383 U CN 2011202318383U CN 201120231838 U CN201120231838 U CN 201120231838U CN 202246841 U CN202246841 U CN 202246841U
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- 238000004544 sputter deposition Methods 0.000 title abstract description 16
- 239000005543 nano-size silicon particle Substances 0.000 title abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 46
- 239000010703 silicon Substances 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000010438 heat treatment Methods 0.000 claims abstract description 9
- 239000010409 thin film Substances 0.000 claims description 30
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 22
- 229910017083 AlN Inorganic materials 0.000 claims description 17
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 17
- 229910001220 stainless steel Inorganic materials 0.000 claims description 11
- 239000010935 stainless steel Substances 0.000 claims description 11
- 238000000151 deposition Methods 0.000 abstract description 10
- 239000000463 material Substances 0.000 abstract description 8
- 238000002360 preparation method Methods 0.000 abstract description 7
- 230000008021 deposition Effects 0.000 abstract description 6
- 239000013078 crystal Substances 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract description 3
- 238000005086 pumping Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 24
- 238000000034 method Methods 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 239000012528 membrane Substances 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 238000000869 ion-assisted deposition Methods 0.000 description 5
- 230000009466 transformation Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000010849 ion bombardment Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000004062 sedimentation Methods 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000000197 pyrolysis Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 238000013084 building-integrated photovoltaic technology Methods 0.000 description 1
- 230000010307 cell transformation Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
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Abstract
The utility model relates to the field of preparation of silicon film material, in particular to a sputtering device for preparing a nano silicon film by a medium-frequency magnetic control sputtering method. The sputtering device comprises a vacuum chamber and a pumping device; a nonequilibrium downward sputtering planar twin silicon target is arranged in a sputtering vacuum device; a substrate heating platform is arranged under the twin silicon target; a baffle plate is arranged between the substrate heating platform and the twin silicon target; and a serially-connected solenoid coil group is arranged under the substrate heating platform. According to the utility model, an additional solenoid coil is adopted for continuously adjusting the nonequilibrium of the twin target; high-rate ion assistant deposition of the nano silicon film at low power is realized; a film crystal structure is controllable within a large range; and an optical band gap is adjustable.
Description
Technical field
The utility model relates to the preparation field of silicon film material, and a kind of specifically medium frequency magnetron sputtering legal system is equipped with the sputter equipment of Nano thin film.
Background technology
To reducing silicon materials consumption, reducing the problem of solar cell cost, be that the thin-film solar cells of critical material demonstrates its unique charm with the silicon film today that solar battery technology is fast-developing.Silicon film solar batteries only has several microns usually with sensitive materials (silicon film) thickness, can save the HIGH-PURITY SILICON material in a large number.In addition; Its ME is simple, but big area continuous production less consumes energy; And can adopt lower cost materials such as glass or stainless steel as substrate, and also have the low light level simultaneously to respond characteristics preferably, be particularly suitable for being applied to desert photovoltaic plant and BIPV.At present, the silicon thin-film battery of industrialization mainly contains non-crystalline silicon and amorphous/microcrystalline silicon film battery.Non-crystalline silicon is a kind of good solar cell material, but because its optical band gap is 1.7eV, makes material itself insensitive to solar radiation spectrographic Long wavelength region, has limited the efficiency of conversion of non-crystal silicon solar cell.In addition, its defect state density is high, and photoelectric transformation efficiency can decay along with the continuity of light application time, and promptly so-called photic decline S-W effect makes battery performance unstable.Although the laboratory the highest transformation efficiency of amorphous silicon membrane battery has reached 13%, the stable conversion efficient of commercially available amorphous silicon film photovoltaic assembly is on the low side, is merely about 6-8%.Introduce microcrystal silicon layer in the amorphous silicon membrane battery structure, form amorphous/crystalline/micro-crystalline silicon laminated hull cell, improved the transformation efficiency and the stability of amorphous silicon membrane battery to a certain extent.The 1cm that in October, 2010, company of Kyocera announced
2Amorphous/crystalline/micro-crystalline silicon laminated hull cell transformation efficiency up to 13.8%.But the microcrystal silicon crystallization rate that common above-mentioned laminated cell adopted is low, and large-area uniformity is difficult to guarantee, make its industrialization product transformation efficiency be difficult to break through 10%, and its good article rate also only has about 60%.
Existing silicon thin-film battery at the experimental stage is mainly polysilicon and Nano thin film battery.But polycrystalline silicon film material has the big area of current carrier high mobility and the amorphous silicon material of single crystal silicon material, the advantage of low-cost preparation concurrently.The top efficiency that present laboratory is obtained reaches 18%; The efficiency of conversion of Japan Zhong Yuan (Kaneka) company pilot product is 12%; Also have bigger room for promotion, but (＞600 ℃) completion under higher temperature usually of prior art for preparing polysilicon membrane is difficult to carry out scale of mass production.Nano thin film is because of receiving much concern in promising application aspect the photoelectric device (such as thin film solar cell).Compare with amorphous silicon membrane, Nano thin film shows strong carrier mobility, and being directed to photo attenuation has high stability, and is beneficial to the absorption of the interior light of region of ultra-red of solar spectrum.In January, 2011, American National renewable energy resources laboratory announced that three joint laminate film cell conversion efficiency of the introducing nanometer silicon layer of United Solar company are 12%, and the introducing of nanometer silicon layer makes the efficient of original battery improve nearly 50%.Obviously, the development thin-film solar cell of nano silicon is significant for the transformation efficiency that improves silicon-based film solar cells.Yet because nano-silicon belongs to indirect optics gap semiconductor, the Nano thin film solar cell needs the thick intrinsic layer of 2-3 μ m to absorb the sunshine of q.s.Therefore, to prepare the Nano thin film of high quality, fabricating low-defect-density be one of key that promotes Nano thin film battery commercialization process to two-forty.
The preparation method of Nano thin film mainly contains chemical Vapor deposition process (CVD) and magnetron sputtering method (PVD).Compare with the CVD method, magnetron sputtering method has the incorporation that can only adopt Ar work, H and is easy to regulate, does not exist environmental pollution and safety-problems and characteristics such as low for equipment requirements.Sputtering sedimentation prepares Nano thin film, and most research concentrates on adopts pulse direct current or radio-frequency magnetron sputter method.Yet the problems such as uniformity of film of low sedimentation rate, nonideal technology stability and difference all are present in the middle of above-mentioned two kinds of methods.In addition, cost an arm and a leg and the also application of limitation of radio frequency sputtering technology in commercialization Nano thin film preparation of resistance matching problem.The medium frequency magnetron sputtering that starts from eighties of last century late nineteen nineties is thought that extensively a kind of big area very cost-effectively prepares the means of semiconductor film fast.Usually the medium frequency magnetron sputtering system comprises the target that a pair of suspension is installed at least, and two target sizes are all identical with profile.On the one hand, in the semiconductor film deposition process, two targets are alternately as sputter cathode and anode; When added voltage was in negative half period on the target, target surface was by the positive ion bombardment sputter, and when positive half cycle; Electronics in the plasma body is accelerated to target surface; The positive charge that has neutralized and accumulated on the target surface remains the fresh of two target surfaces, thereby has suppressed sparking.When such two targets discharged, the stability on time and the space was guaranteed, thereby RF sputtering possesses excellent process repeatability and film equality in making.On the other hand, when two targets sputter anode and cathode each other replaces, between two targets in the glow plasma charged particle vibrate back and forth, strengthen the collision of itself and gaseous state neutral particle, thereby improve the plasma density of whole electrical discharge zone.The increase of plasma density makes the ion bombardment intensity enhancing that acts on target surface and substrate surface in the unit time, and the target surface sputter rate improves, be beneficial to the substrate upper film fast, fine and close, growth in high quality.In the intermediate frequency sputtering system, two magnetic controlling target layouts that are used for sputter have twin target and to two kinds of forms of target.Usually the twin target layout is two targets parallel side by side (TwinMag I) or angled each other (TwinMag II) relatively.People such as U.Heister research shows that TwinMag II layout has high sedimentation rate and target utilization and long target life.Therefore, the twin target layout that the form of employing TwinMag II is arranged more can satisfy in the industrial production, the requirement of the efficient film of preparation fast.
In addition, in the magnetic control sputtering system, the design meeting in magnetic controlling target magnetic field greatly influences sputter ability and the interior plasma density of the preceding discharge space of target and the distribution of target self.Usually the magnetic controlling target Magnetic Field Design is divided into equilibrium state and two kinds of nonequilibrium state, in the equilibrium state magnetic controlling target outer magnet magneticflow about equally, magneticline of force is in magnetic control target surface closure; Can be effectively plasma body (mainly being electronics) be constrained near the target surface, increases probability of collision, improve ionization efficient; Thereby just can build-up of luminance under lower operating air pressure and voltage and keep photoglow; Reduced the escape of target surface high energy secondary electron simultaneously, the ion current density that arrives substrate is little, usually about 10
-1MA/cm
2Magnitude, the suffered ion bombardment of substrate is little, helps realizing low temperature depositing; By comparison; The magneticline of force on nonequilibrium state magnetic controlling target surface is not closed; Magneticline of force can be along the border extended of target to substrate region, thereby portions of electronics and ion can expand to substrate along magneticline of force, have strengthened the specific ionization and the plasma density of substrate region; Substrate place saturation ion current density is big, can reach 1-10mA/cm usually
2Magnitude.Like this, change the non-equilibrium degree of magnetic control twin target, just can strengthen or weaken the plasma density and the ion bombardment intensity at substrate place.The target Magnetic Field Design of optimizing in addition also can improve target utilization, improves plasma body uneven distribution spatially, the thickness and the homogeneity of control large-area film deposition.In sum, the intermediate frequency twin target magnetic control sputtering system of employing target magnetic field optimization design is expected to realize the fast deposition of Nano thin film.
About adopting medium frequency magnetron sputtering to prepare silicon film; Rarely has report both at home and abroad; China Science in 2010 has reported that people such as Yu Wei adopt the intermediate frequency facing-target magnetron sputtering system to prepare the amorphous hydrogenated silicon film; Horse triumph in the same year waits the people to adopt the preparation amorphous silicon membrane to target medium frequency magnetron sputtering elder generation, utilizes the vacuum annealing processing under 550-950 ℃ of condition, to prepare crystallization rate then and is up to 45% Nano thin film.Although they adopt medium frequency magnetron sputtering to prepare the depositing silicon film, its deposited structure is amorphous, directly in substrate, does not prepare Nano thin film, even can obtain nano-silicon after the sample thermal treatment, but its crystallization rate is also very low; In addition, two target co-sputterings are very little to the high rate deposition contribution of film when adopting facing-target magnetron sputtering system, do not give full play of the fast characteristics of medium frequency magnetron sputtering deposition techniques speed.Magnetron sputtering deposition is mainly atomic deposition; The particle energy that deposits to substrate is all less, and during medium frequency magnetron sputtering depositing silicon film, because sedimentation rate is very fast; The mobility of substrate surface absorption Siliciumatom can further receive the restriction of the substrate silicon particle that arrives soon after; The relaxation that is unfavorable for unordered silicon network, therefore the forming core of silicon crystal grain and difficult growth are difficult to obtain the ideal Nano thin film.Obviously, it is significant to develop a kind of method of utilizing intermediate frequency twin target non-balance magnetically controlled sputter directly on substrate, to prepare Nano thin film fast based on above-mentioned background.
The utility model content
The purpose of the utility model is to overcome above-mentioned existing deficiency, provides a kind of medium frequency magnetron sputtering legal system to be equipped with the sputter equipment of Nano thin film.
For realizing above-mentioned purpose, the utility model adopts technical scheme:
A kind of medium frequency magnetron sputtering legal system is equipped with the sputter equipment of Nano thin film; Comprise Vakuumkammer, air extractor; Be provided with the twin silicon target in plane of the downward sputter of nonequilibrium state in the said sputter vacuum unit; Twin silicon target below is provided with the substrate warm table, is provided with baffle plate between substrate warm table and the twin silicon target, and substrate warm table below is provided with a placed in-line solenoid group.
Angle is 156 ° between twin silicon target two targets in the plane of the downward sputter of described nonequilibrium state.The twin silicon target of said solenoid group distance is 80-100mm.The twin magnetic control silicon target of said nonequilibrium state be located at that placed in-line solenoid forms coupled magnetic field under the substrate warm table, strengthen and confining plasma, wherein the twin magnetic control silicon target of nonequilibrium state ectonexine permanent magnet is that polarity inequality or polarity are identical.Said substrate heating table top is for embedding the Stainless Steel Disc of aluminium nitride AlN (AlN).
The advantage that the utility model had:
1. optimize the twin magnetic controlling target of nonequilibrium state of Magnetic Field Design in the utility model and add the core that solenoid constitutes whole sputtering system; The structure of perfect coupled magnetic field makes the discharge chamber plasma body firmly constrained between two targets and the solenoid and is enhanced between twin target and the solenoid, has also improved near the uneven distribution of plasma body substrate simultaneously; Substrate is immersed in the equally distributed focusing plasma body in space, realizes ion assisted deposition.
2. the utility model utilizes stainless steel to be prone to processing and the aluminium nitride AlN thermal conductivity is high, the characteristics of Heat stability is good; The Stainless Steel Disc that AlN is inlayed in employing substitutes commercially available single stainless steel heating disks in pyrolysis plant; Improved the substrate uneven problem of being heated, accuracy of temperature control also necessarily promoted.
3. the utility model adopts and adds the non-equilibrium degree that solenoid is adjusted twin target continuously, has realized the ion assisted deposition of Nano thin film two-forty under the reduce power consumption, and the film crystal structure is controlled on a large scale, optical band gap is adjustable.
4. promptly adopt the ion assisted deposition of the twin target non-balance magnetically controlled sputter enforcement silicon film of closed magnetic field in the utility model deposition process; Adopt the ion assisted deposition of the twin target non-balance magnetically controlled sputter enforcement silicon film in minute surface magnetic field simultaneously, also adopt the twin target non-balance magnetically controlled sputter in minute surface magnetic field to add the ion assisted deposition that coupled magnetic field is implemented silicon film in addition.
Description of drawings
The twin target magnetic control sputtering system synoptic diagram that Fig. 1 provides for the utility model embodiment.1. sputter Vakuumkammers wherein; 2. the twin silicon target in plane; 3. baffle plate; 4. substrate warm table; 5. solenoid group; 6. vacuum pump group.
The stainless steel heating plate synoptic diagram of the embedding AlN that Fig. 2 provides for the utility model embodiment.
Embodiment
Below in conjunction with accompanying drawing and embodiment the utility model is done further to detail.
Embodiment
As shown in Figure 1; The twin target magnetic control sputtering system synoptic diagram that the embodiment of the invention provides, the medium frequency magnetron sputtering legal system is equipped with the sputter equipment of Nano thin film, comprises Vakuumkammer, air extractor; Be provided with the twin silicon target 2 in plane of the downward sputter of nonequilibrium state in the said sputter vacuum unit 1; Twin silicon target 2 belows are provided with substrate warm table 4, are provided with baffle plate 3 between substrate warm table 4 and the twin silicon target 2, and substrate warm table 4 belows are provided with a placed in-line solenoid group 5.Angle is 156 ° between 2 liang of targets of the twin silicon target in the plane of the downward sputter of nonequilibrium state.The twin silicon target 2 of solenoid group 5 distances is 80-100mm.
The twin magnetic control silicon target of nonequilibrium state be located at that placed in-line solenoid forms coupled magnetic field under the substrate warm table, strengthen and confining plasma, wherein the twin magnetic control silicon target of nonequilibrium state ectonexine permanent magnet is that polarity inequality or polarity are identical.Substrate heating table top is for embedding the Stainless Steel Disc (referring to Fig. 2) of aluminium nitride AlN (AlN).
In addition, the stainless steel heating disks in pyrolysis plant that embeds aluminium nitride AlN (AlN) is: adopt turning processing, on the stainless steel card of a circle, process a diameter and be slightly larger than 80mm; The degree of depth is the circular groove of 1.5mm; And bottom land carried out polished finish reaching certain smooth finish, the circular AlN sheet (diameter is 80mm, and roughness Ra is 0.3 micron) that guarantees to embed fits tightly with the stainless steel end liner; In the hope of reduce thermal resistance between the two as far as possible, realize the substrate thermally equivalent.
The foregoing description is a preferred implementation of the present invention; But embodiment of the present invention is not restricted to the described embodiments; Other any do not deviate from change, the modification done under spirit of the present invention and the principle, substitutes, combination, simplify; All should be the substitute mode of equivalence, be included within protection scope of the present invention.
Claims (5)
1. a medium frequency magnetron sputtering legal system is equipped with the sputter equipment of Nano thin film; Comprise Vakuumkammer, air extractor; It is characterized in that: the twin silicon target in plane (2) that is provided with the downward sputter of nonequilibrium state in the said sputter vacuum unit (1); Twin silicon target (2) below is provided with substrate warm table (4), is provided with baffle plate (3) between substrate warm table (4) and the twin silicon target (2), and substrate warm table (4) below is provided with a placed in-line solenoid group (5).
2. be equipped with the sputter equipment of Nano thin film by the said medium frequency magnetron sputtering legal system of claim 1, it is characterized in that: angle is 156 ° between twin silicon target (2) two targets in the plane of the downward sputter of described nonequilibrium state.
3. be equipped with the sputter equipment of Nano thin film by the said medium frequency magnetron sputtering legal system of claim 1, it is characterized in that: said solenoid group (5) the twin silicon target of distance (2) is 80-100mm.
4. the sputter equipment that is equipped with Nano thin film by the said medium frequency magnetron sputtering legal system of claim 1; It is characterized in that: the twin silicon target in plane of the downward sputter of described nonequilibrium state be located at that placed in-line solenoid forms coupled magnetic field under the substrate warm table; Strengthen and confining plasma, wherein the twin magnetic control silicon target of nonequilibrium state ectonexine permanent magnet is that polarity inequality or polarity are identical.
5. be equipped with the sputter equipment of Nano thin film by the said medium frequency magnetron sputtering legal system of claim 1, it is characterized in that: said substrate heating table top is for embedding the Stainless Steel Disc of aluminium nitride AlN AlN.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202318383U CN202246841U (en) | 2011-06-09 | 2011-07-01 | Sputtering device for preparing nano silicon film by medium-frequency magnetic control sputtering method |
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| CN201110154713 | 2011-06-09 | ||
| CN201110154713.X | 2011-06-09 | ||
| CN2011202318383U CN202246841U (en) | 2011-06-09 | 2011-07-01 | Sputtering device for preparing nano silicon film by medium-frequency magnetic control sputtering method |
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| CN202246841U true CN202246841U (en) | 2012-05-30 |
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| CN2011202318383U Expired - Fee Related CN202246841U (en) | 2011-06-09 | 2011-07-01 | Sputtering device for preparing nano silicon film by medium-frequency magnetic control sputtering method |
| CN201110184004.6A Expired - Fee Related CN102817004B (en) | 2011-06-09 | 2011-07-01 | Method for preparing nanometer silicon film through intermediate-frequency magnetron sputtering process, and its special device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103668092A (en) * | 2012-09-24 | 2014-03-26 | 中国科学院大连化学物理研究所 | Plasma assisted magnetron sputtering depositing method |
| WO2023169135A1 (en) * | 2022-03-07 | 2023-09-14 | 上海电子信息职业技术学院 | Ion generation device for straight tube square electromagnetic ion implantation equipment |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103074586B (en) * | 2013-01-23 | 2015-03-25 | 中国科学院金属研究所 | Low-temperature and low-damage multifunctional composite coating device and method |
| CN110004419B (en) * | 2019-02-28 | 2020-10-30 | 武汉理工大学 | Method for preparing Fe-Si film by utilizing unbalanced magnetron sputtering technology |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112005001599B4 (en) * | 2004-07-09 | 2019-03-28 | National Institute For Materials Science | Method for switching the magnetic flux distribution of a magnetron sputtering apparatus |
| CN1948546A (en) * | 2006-11-07 | 2007-04-18 | 武汉大学 | Medium frequency twin magnetron sputtering device for cooling metal gallium target |
-
2011
- 2011-07-01 CN CN2011202318383U patent/CN202246841U/en not_active Expired - Fee Related
- 2011-07-01 CN CN201110184004.6A patent/CN102817004B/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103668092A (en) * | 2012-09-24 | 2014-03-26 | 中国科学院大连化学物理研究所 | Plasma assisted magnetron sputtering depositing method |
| CN103668092B (en) * | 2012-09-24 | 2016-03-02 | 中国科学院大连化学物理研究所 | A kind of plasma-aid magnetron sputtering deposition method |
| WO2023169135A1 (en) * | 2022-03-07 | 2023-09-14 | 上海电子信息职业技术学院 | Ion generation device for straight tube square electromagnetic ion implantation equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102817004B (en) | 2014-02-05 |
| CN102817004A (en) | 2012-12-12 |
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