CN1948546A - Medium frequency twin magnetron sputtering device for cooling metal gallium target - Google Patents
Medium frequency twin magnetron sputtering device for cooling metal gallium target Download PDFInfo
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- CN1948546A CN1948546A CN 200610124959 CN200610124959A CN1948546A CN 1948546 A CN1948546 A CN 1948546A CN 200610124959 CN200610124959 CN 200610124959 CN 200610124959 A CN200610124959 A CN 200610124959A CN 1948546 A CN1948546 A CN 1948546A
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- magnetron sputtering
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Abstract
The invention discloses a twin magnetron spattering device with target medium frequency for cooling gallium. It contains vacuum chamber and vacuum-pumping port. There are magnetron target and rotatable substrate frame in vacuum chamber. Two magnetron targets with target tank structure compose the twin target. The two magnetron targets join separately to two outputs of medium-frequency power. Substrate frame is parallel to magnetron targets. There is a cooling chamber with inlet and outlet for cooling medium inside magnetron targets. Taking full advantage of medium-frequency twin magnetron spattering film, the invention can efficiently restrain inherent defects of target poisoning, get over molecular beam extension (MBE) and metal oxide chemical vapour deposition (MOCVD) which include high temperature growth, high cost and organic pollution etc. The invention has characteristics of low film forming temperature, high coating efficiency, low cost, convenient operation and without environmental pollution etc., which a GaN low-temperature depositing device with a great applicable value.
Description
Technical field
The present invention relates to a kind of intermediate frequency twin magnetron sputtering device that cooling metal gallium target is housed.
Background technology
The GaN monocrystal thin films generally uses MOCVD, MBE or halogenide vapour phase epitaxy (HVPE) method to form in the epitaxy on Sapphire Substrate of 800～1100oC high temperature; MOCVD and MBE are then generally adopted in the preparation of GaN photoelectric device, and HVPE also is successfully used to prepare the GaN luminescent device recently.But concerning Application Areass such as film crystal indicating meter and solar cell, because the general glass substrate that adopts is made flow process and need be finished at a lower temperature, above-mentioned three kinds of methods (MBE, MOCVD, HVPE) all are unsuitable for this Application Areas.The magnetron sputtering sputter is a kind of preparation technology in low temperature.Because the energy of sputtered atom can have only in several eV thereby the magnetically controlled sputter method, growth temperature can be controlled at below the 300C.On the other hand, MOCVD must use metal organic source, HVPE to adopt a large amount of HCl, and two kinds of methods all need to carry out necessary blowdown and handle, and magnetron sputtering adopts pure metal sources, reactant gases is N2, need not any blowdown and handles, and is a kind of environmentally friendly technology of preparing of not polluting.But existing magnetic control sputtering device such as direct current and radio-frequency unit Ga, N when film forming are reflected at and also generate the GaN layer on the target surface, thereby have a strong impact on sedimentation rate, form so-called target intoxicating phenomenon.
Summary of the invention
The object of the present invention is to provide a kind of cooling metal gallium target intermediate frequency twin magnetron sputtering device, this device has preferably that plated film ability, cost are low, good uniformity, be easy to control, low, the non-environmental-pollution of film-forming temperature.
Technical scheme provided by the invention is: a kind of cooling metal gallium target intermediate frequency twin magnetron sputtering device, comprise vacuum chamber, vacuum chamber is provided with vacuum orifice, be provided with magnetic controlling target and rotatable substrate holder in the vacuum chamber, it is characterized in that: magnetic controlling target adopts target tank structure, constitute twin target by two magnetic controlling targets, two magnetic controlling targets connect substrate holder and parallel placement relative with magnetic controlling target with two outputs of intermediate frequency power supply respectively; Be provided with cooling room in the magnetic controlling target, cooling room is provided with cooling medium inlet and outlet.
The target magnetic field layout type of above-mentioned each magnetic controlling target of the present invention is unbalanced magnetic field, forms closed alone.
The rectangular target tank structure of above-mentioned magnetic controlling target.
Above-mentioned substrate holder is provided with lining heat.
In order further to improve the sticking power of film and matrix, above-mentioned substrate is added with negative bias, and bias voltage can be adjustable continuously in 0-1000V.
The present invention has that plated film efficient height, cost are low, good uniformity, be easy to characteristics such as control, film-forming temperature are low, non-environmental-pollution.
Description of drawings
Accompanying drawing is a structural representation of the present invention.
Embodiment
Be described further below in conjunction with the use of accompanying drawing device of the present invention:
The present invention includes vacuum chamber 13 as shown in drawings, depositing system and power supply and Controlling System, vacuum chamber 13 is provided with vacuum orifice 4, be provided with magnetic controlling target 6 and rotatable substrate holder 14 (substrate holder 14 is fixed on the turning axle 9 by drive mechanism) in the vacuum chamber 13, depositing system of the present invention is crucial, comprise target system and substrate system, magnetic controlling target 6 adopts target tank structure, constitute twin target by two magnetic controlling targets, two magnetic controlling targets 6 are by 8 power supplies of an intermediate frequency power supply, and frequency is 40KHz, and power is 20kW, two magnetic controlling targets 6 connect with two outputs of intermediate frequency power supply 8 respectively, two targets alternately are the positive and negative electrode of intermediate frequency power supply, constitute twin target, have avoided nucleation and the growth of compound at target surface, overcome the target intoxicating phenomenon, sedimentation rate is increased substantially.Substrate holder 14 and magnetic controlling target 6 relative and parallel placements, and distance adjustable (can realize by the turning axle of up-down adjustment substrate holder) are so that optimize processing parameter.Be provided with cooling room 5 in the magnetic controlling target 6, cooling room 5 is provided with heat-eliminating medium 7 imports and outlet.In vacuum chamber 13, each independent target preferably adopts the rectangular target pool structure (when substrate 12 rotates like this, substrate 12 always is in the sputter plasma, more common round target more helps large-area coating film), target pond 3 base plates adopt the good red copper of thermal conductivity, with isolating pipeline water flowing energising, cooling and bias voltage are controlled being circulated in the target pond below each target pond 3.Iron boron strong magnet is placed at each magnetic controlling target back side, and the magnetic field arranged direction is identical, forms closed, target surface magneticstrength 500Gauss; Each independent target magnetic field layout type all is a unbalanced magnetic field simultaneously.When depositing film forming, in gallium impouring target pond, to being lower than gallium fusing point (29 ℃), form solid target with cooling water circulation cooling (as 5--20 ℃ of water coolant), even for guaranteeing heat conduction, the target tank depth is designed to 3mm.Simultaneously in order further to improve film-Ji sticking power, the negative bias 2 that the substrate holder 14 of this device is installed about 1000V, carry out the original position ion before the plated film and clean, the substrate surface that obtains cleaning, in the film process again with suitable energy ion bombardment improve film base sticking power and film internal stress.
Substrate holder among the present invention is installed well heater and thermopair 1, can accurately control underlayer temperature.Gas 10 flows can be by mass flowmeter 11 controls.Vacuum system can be made up of diffusion pump and mechanical pump, also can adopt molecular pump.Working gas is nitrogen, argon gas mixed gas during deposition.With mass flowmeter the flow of gas is controlled.
When system starts, start mechanical pump earlier and take out rough vacuum, start the diffusion pump pumping high vacuum then, when vacuum tightness reaches 5 * 10
-3During Pa, start heating unit, carry out bake out, remove air adsorbed on vacuum-chamber wall, substrate holder and the substrate, keep about 100 ℃ underlayer temperature, vacuum tightness reaches 5 * 10
-3During Pa, stop heating, charge into working gas, begin to enter coating process, after coating process finished, logical nitrogen or naturally cooling when equitemperature drops to below 50 ℃, took out substrate, and whole workflow finishes.
The present invention is different with general both at home and abroad at present GaN filming equipment, cool metal target technology, twin technology, closed magnetic field technology have been made full use of, utilized the advantage of rectangular target especially, can on the big area substrate, form evenly level and smooth film, to be modified into the homogeneity of film thickness, improve film quality.This device can overcome the shortcoming of GaN deposition techniques such as MOCVD, HVPE,, environmental pollution higher as temperature etc.Device can adopt computer controlled automatic.Equipment provided by the invention has demonstrated fully the advantage of the twin coating technique of intermediate frequency, has overcome the deficiency of existing many preparation systems, has characteristics such as plated film efficient height, coating cost are low, easy to operate, non-environmental-pollution, has great using value.
Claims (5)
1, a kind of cooling metal gallium target intermediate frequency twin magnetron sputtering device, comprise vacuum chamber, vacuum chamber is provided with vacuum orifice, be provided with magnetic controlling target and rotatable substrate holder in the vacuum chamber, it is characterized in that: magnetic controlling target adopts target tank structure, constitute twin target by two magnetic controlling targets, two magnetic controlling targets connect substrate holder and parallel placement relative with magnetic controlling target with two outputs of intermediate frequency power supply respectively; Be provided with cooling room in the magnetic controlling target, cooling room is provided with cooling medium inlet and outlet.
2, cooling metal gallium target intermediate frequency twin magnetron sputtering device according to claim 1 is characterized in that: the target magnetic field layout type of each magnetic controlling target is unbalanced magnetic field, forms closed alone.
3, cooling metal gallium target intermediate frequency twin magnetron sputtering device according to claim 1 and 2 is characterized in that: the rectangular target tank structure of magnetic controlling target.
4, cooling metal gallium target intermediate frequency twin magnetron sputtering device according to claim 1 and 2, it is characterized in that: substrate holder is provided with lining heat.
5, cooling metal gallium target intermediate frequency twin magnetron sputtering device according to claim 1 and 2 is characterized in that: substrate is added with continuously adjustable negative bias in the 0-1000V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610124959 CN1948546A (en) | 2006-11-07 | 2006-11-07 | Medium frequency twin magnetron sputtering device for cooling metal gallium target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610124959 CN1948546A (en) | 2006-11-07 | 2006-11-07 | Medium frequency twin magnetron sputtering device for cooling metal gallium target |
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| Publication Number | Publication Date |
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| CN1948546A true CN1948546A (en) | 2007-04-18 |
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| CN 200610124959 Pending CN1948546A (en) | 2006-11-07 | 2006-11-07 | Medium frequency twin magnetron sputtering device for cooling metal gallium target |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101397650B (en) * | 2007-09-25 | 2011-07-13 | 佳能安内华股份有限公司 | Target structure and target holding apparatus |
| CN101544473B (en) * | 2009-03-06 | 2011-11-23 | 湖州金泰科技股份有限公司 | Method for plating glasses to a large area without pollution |
| CN102534511A (en) * | 2012-02-28 | 2012-07-04 | 东北大学 | Film vapor deposition device and application method thereof |
| CN102817004A (en) * | 2011-06-09 | 2012-12-12 | 中国科学院金属研究所 | Method for preparing nanometer silicon film through intermediate-frequency magnetron sputtering process, and its special device |
| CN106367724A (en) * | 2016-09-28 | 2017-02-01 | 深圳市华星光电技术有限公司 | Sputtering device |
-
2006
- 2006-11-07 CN CN 200610124959 patent/CN1948546A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101397650B (en) * | 2007-09-25 | 2011-07-13 | 佳能安内华股份有限公司 | Target structure and target holding apparatus |
| CN101544473B (en) * | 2009-03-06 | 2011-11-23 | 湖州金泰科技股份有限公司 | Method for plating glasses to a large area without pollution |
| CN102817004A (en) * | 2011-06-09 | 2012-12-12 | 中国科学院金属研究所 | Method for preparing nanometer silicon film through intermediate-frequency magnetron sputtering process, and its special device |
| CN102817004B (en) * | 2011-06-09 | 2014-02-05 | 中国科学院金属研究所 | Method for preparing nanometer silicon film through intermediate-frequency magnetron sputtering process, and its special device |
| CN102534511A (en) * | 2012-02-28 | 2012-07-04 | 东北大学 | Film vapor deposition device and application method thereof |
| CN102534511B (en) * | 2012-02-28 | 2013-10-16 | 东北大学 | Film vapor deposition device and application method thereof |
| CN106367724A (en) * | 2016-09-28 | 2017-02-01 | 深圳市华星光电技术有限公司 | Sputtering device |
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