CN104651793A - Preparation device and method for metal film on surface of polycrystalline silicon - Google Patents
Preparation device and method for metal film on surface of polycrystalline silicon Download PDFInfo
- Publication number
- CN104651793A CN104651793A CN201510120322.4A CN201510120322A CN104651793A CN 104651793 A CN104651793 A CN 104651793A CN 201510120322 A CN201510120322 A CN 201510120322A CN 104651793 A CN104651793 A CN 104651793A
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- China
- Prior art keywords
- polysilicon
- vacuum chamber
- metallic film
- driving mechanism
- voltage pulse
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a preparation device and method for a metal film on the surface of polycrystalline silicon. The method comprises the steps of respectively connecting a polycrystalline silicon wafer and a metal target to the anode and cathode of a high-voltage pulse power supply, and placing the polycrystalline silicon wafer and the metal target into a vacuum chamber filled with argon gas; ionizing the argon gas by virtue of an electric field located between the polycrystalline silicon wafer and the metal target to generate argon ions; bombarding the metal target by using the formed argon ions to generate sputtered particles; depositing the generated sputtered particles on the surface of the polycrystalline silicon wafer; heating the surface of the polycrystalline silicon wafer within the interval time of the high-voltage pulse power supply by laser scanning to accelerate the permeation of the sputtered particles; and circularly carrying out sputtering and laser heating according to the high-voltage pulse frequency to form the metal film on the surface of the polycrystalline silicon wafer. The metal film prepared on the surface of the polycrystalline silicon is good in uniformity and high in film base binding force; and meanwhile, the device is relatively simple in structure and is easily mounted and overhauled.
Description
technical field:
The present invention relates to preparation facilities of a kind of polysilicon surface metallic film and preparation method thereof.
background technology:
Along with the development of modern science and technology, the new physics of material surface or chemical property can be given to solid material enforcement film and sufacing, thus prepare the component with excellent properties.For semiconductor material, preparing metallic film on its surface can improve conductivity, is particularly useful for the backplate preparation of polysilicon solar cell.
The method at present preparing metallic film at polysilicon surface mainly contains: evaporation coating, sputter coating, ion film plating etc.Evaporation coating is for high-melting-point target because evaporation is too slow, and the speed of plated film is slow; The speed of sputter coating, ion film plating, but plated film is in uneven thickness.Aforesaid method is all form deposited plating layer at substrate material surface, and do not spread further, the bonding force of rete and base material is poor, rete easily occurs and comes off.
summary of the invention:
The object of the present invention is to provide a kind of can at non-metal material surface preparation facilities preparing the polysilicon surface metallic film that metallic film efficiency is high, thickness is even, film-substrate cohesion is good and preparation method thereof.
In order to realize foregoing invention object, the invention provides a kind of preparation method of polysilicon surface metallic film: polysilicon chip and metal targets are connected to the positive pole of high-voltage pulse power source and negative pole and are placed in and be filled with in the vacuum chamber of argon gas, electric field between the two makes argon gas ionize, the argon ion bombardment metal targets formed, produce sputtering particle and be deposited on polysilicon chip surface, this polysilicon chip surface is within the interval time of high-voltage pulse power source, be subject to the scanning heating of laser, accelerate the infiltration of sputtering particle, and sputtering and LASER HEATING are back and forth carried out by the frequency cycle of high-voltage pulse, polysilicon chip surface is made to form metallic film.
In order to ensure the abundant ionization of argon gas, after vacuum chamber, air pressure is at 5 × below 10-3Pa; Add the ar pressure that man-hour, vacuum chamber was filled with and remain at 0.1-1Pa.
In order to control the speed of growth of metal coating preferably, the high voltage pulse voltage between metal targets and polysilicon workpiece is 500-1000V.
In order to carry out scanning heating to polysilicon chip surface, accelerate the infiltration of depositing ions to base material, workpiece of can not burning again, the laser of use is semiconductor laser, and wavelength is 1064nm, and power controls at 30W-50W, and frequency control is at 500-2000Hz.
In order to realize foregoing invention object, the invention provides a kind of preparation facilities of polysilicon surface metallic film: comprise vacuum chamber, metal targets, magnet, laser apparatus, high-voltage pulse power source, argon bottle, vacuum pump, polysilicon and for clamping and the fixture driving polysilicon to move, some described magnets are arranged in vacuum chamber, metal targets is placed on magnet, argon bottle and vacuum pump respectively with vacuum chamber, the positive and negative electrode of high-voltage pulse power source is electrically connected with polysilicon and metal targets respectively, the corresponding hole of laser beam by vacuum chamber sidewall is arranged that laser apparatus is launched, project on polysilicon.
Just fully metallics can be splashed in face for the ease of polysilicon, described fixture be arranged on make X, Y-motion driving mechanism on, this driving mechanism comprises X to driving mechanism and Y-direction driving mechanism, Y-direction driving mechanism is slidably connected to X to driving mechanism, and X is to driving mechanism vertical movement relatively, fixture is arranged on Y-direction driving mechanism.
Further, described X includes guide rail, leading screw, nut and motor to driving mechanism and Y-direction driving mechanism, and described leading screw is fixedly connected with machine shaft, and nut screw is connected on leading screw, and one end is connected with slide; Guide rail in described Y-direction running gear and motor are arranged on X on the nut in running gear, and described fixture is arranged on the nut in Y-direction running gear.
Laser beam for ease of laser apparatus injection is incident on polysilicon better, laser reflection mechanism is also provided with in described vacuum chamber, this mechanism comprises guide rail, completely reflecting mirror, condenser lens and slide, described slide is slidably arranged on guide rail, completely reflecting mirror and condenser lens are arranged on slide, and described laser beam is by completely reflecting mirror and condenser lens projecting at the most on crystal silicon.
The magnetic field produced for preventing magnet impacts other working parts in vacuum chamber, and be also provided with the shielding pressing plate for shielding magnets magnetic fields in vacuum chamber, described shielding pressing plate is pressed together in metal targets.
For cooling metal targets better, this preparation facilities also comprises cooling body, this refrigerating unit comprises watercooling jacket, cooling water tank, return water pipe and water inlet pipe, described return water pipe is connected with cooling water tank with one end of water inlet pipe, the other end is connected with watercooling jacket, and described watercooling jacket is arranged between adjacent two magnets.
The present invention mainly sputters mode at polysilicon surface depositing metal atoms with magnetic control secondary, utilizes laser reflection mechanism to polysilicon surface scanning heating simultaneously, accelerates metal targets and produces sputtering particle infiltration polysilicon, thus improve the preparation speed of film.In metallic film preparation process, constantly converted the position of polysilicon by digital control system, make sputtering particle can uniform deposition at polysilicon surface, realize the preparation of good uniformity, metallic film that film-substrate cohesion is high.Apparatus of the present invention structure is simple, is easy to install, maintenance, easy to use.
accompanying drawing illustrates:
Fig. 1 is structural representation of the present invention.
Fig. 2 be in the present invention X to driving mechanism and Y-direction driving mechanism structure schematic diagram.
Fig. 3 is the mounting structure schematic diagram shielding pressing plate and magnet in the present invention.
Fig. 4 is laser apparatus mounting structure schematic diagram in the present invention.
Wherein
1, vacuum chamber; 2, digital control system; 4, laser reflection mechanism; 5, high-voltage pulse power source; 6, argon bottle; 7, cooling-water pump; 8, vacuum pump; 9, bracing frame; 10, fixture; 11, polysilicon; 12, worktable; 13, cooling water tank; 21, guide rail; 22, leading screw; 23, slide block; 24, Connection Block; 25, shaft coupling; 31, metal targets; 32, pressing plate is shielded; 33, magnet; 34, target stand; 35, base; 36, return water pipe; 37, water inlet pipe; 38, watercooling jacket; 41, laser apparatus; 42, support; 43, parallel guide; 44, completely reflecting mirror; 45, condenser lens; 46, bracket; 47, guide rod; 48, slide.
embodiment:
The preparation method of a kind of polysilicon surface metallic film of the present invention, the method polysilicon chip and metal targets is connected to the positive pole of high-voltage pulse power source and negative pole and is placed in air pressure at air pressure 4 × 10
-3in the vacuum chamber of Pa, then continue to be filled with argon gas in this vacuum chamber, ensure that vacuum chamber internal gas pressure remains on 0.1-1Pa, open high-voltage pulse power source, make polysilicon chip and metal targets electric field between the two that argon gas is ionized, the argon ion bombardment metal targets formed, produce sputtering particle and be deposited on polysilicon chip surface, start laser to polysilicon chip scanning heating, on polysilicon chip surface within the interval time of high-voltage pulse power source, be subject to the scanning heating of laser, accelerate the infiltration of sputtering particle, and sputtering and LASER HEATING are back and forth carried out by the frequency cycle of high-voltage pulse, polysilicon chip surface is made to form metallic film.The laser used in present method is semiconductor laser, and wavelength is 1064nm, and power controls at 30W-50W, and frequency control is at 500-2000Hz.
As Fig. 1, for better implementing above-mentioned preparation method, the invention provides a kind of preparation facilities of polysilicon surface metallic film, this device has vacuum chamber 1, laser apparatus 41, high-voltage pulse power source 5, argon bottle 6, vacuum pump 8 and for clamping and the fixture 10 driving polysilicon 11 to move, outlet side and the vacuum pump 8 of argon bottle 6 are bled to hold and are connected with vacuum chamber 1 respectively, the positive and negative polarities end of high-voltage pulse power source 5 extends in vacuum chamber 1, and correspondingly with metal targets 31 with polysilicon 11 to be respectively connected, the irradiation end of laser apparatus 41 is arranged on vacuum chamber sidewall, and the laser beam of laser apparatus injection is incident upon on polysilicon 11, vacuum chamber 1 is provided with the sealing hatch door being convenient for changing polysilicon 11 and metal targets 31.
Composition graphs 2, the present invention is the sputtering strengthening metal targets 31 pairs of workpiece 11, magnet 33 is provided with in vacuum chamber 1, three pieces of magnets 33 are embedded on the base 35 of vacuum chamber 1 downside wall, wherein the two blocks of magnet in left and right be N magnetic pole upwards, center magnet be S pole upwards, metal targets 31 is fixedly connected on magnet 33.The present invention impacts other structural element work in vacuum chamber 1 to prevent the magnetic field of magnet 33, shielding pressing plate 32 and target stand 34 is provided with in vacuum chamber 1, target stand 34 is symmetricly set on base 35 both sides, and one end is fixedly connected with vacuum chamber 1 inwall, the other end is connected on the sidewall of metal targets 31, shielding pressing plate 32 is pressed together in metal targets 31, and is fixedly connected with target stand 34, and metal targets 31 is fixedly connected on magnet 33 by shielding pressing plate 32 and target stand 34.Magnet 33 in the present invention defines an annular magnetic confining field above metal targets 31, and this magnetic confining field has transverse magnetic field components and forms orthogonal electromagnetic field with longitudinal high-voltage electric field, can realize the magnetron sputtering of metal targets 31 pairs of polysilicons 11.
The present invention is in order to effectively cool metal targets 31, be provided with a cooling body, this refrigerating unit comprises watercooling jacket 38, cooling water tank 13, return water pipe 36 and water inlet pipe 37, watercooling jacket 38 is arranged between adjacent two magnets 33, cooling water tank 13 is arranged on below vacuum chamber 1, and watercooling jacket 38 is connected with cooling water tank 13 with water inlet pipe 37 by the return water pipe 36 in water-cooled tube.A cooling-water pump 7 is set at water inlet pipe 37, for being evacuated in watercooling jacket 38 by the water in cooling water tank 13.
Composition graphs 3, the present invention drives polysilicon 11 to move to make fixture 10, be provided with in vacuum chamber 1 drive fixture 10 do X, Y-motion X to driving mechanism and Y-direction driving mechanism, this states X, Y-direction running gear includes guide rail 21, leading screw 22, nut, slide block 23, shaft coupling 25 and motor 26.Leading screw 22 is fixedly connected with by the rotating shaft of shaft coupling 25 with motor 26, and nut screw is connected on leading screw 22, and leading screw 22 is slidably connected on guide rail 21 by slide block 23.At X in running gear, motor 26 is fixedly connected on vacuum chamber 1 outer side wall, and shaft coupling 25 cross-under is on vacuum chamber 1 sidewall, and guide rail 21 is fixedly connected on vacuum chamber 1 inner side-wall by bracing frame 9.In Y-direction running gear, guide rail 21 is fixedly connected on X on the slide block 23 in running gear by Connection Block 24, slide block 23 is provided with the worktable 12 for fixedly mounting fixture 10 in Y-direction running gear.Polysilicon 11 is fixedly connected with on table 12 by fixture 10, and is connected with the positive pole of high-voltage pulse power source 5.
Composition graphs 4, the present invention be better by the reflected incident light of laser apparatus 41 on polysilicon 11, one laser reflection mechanism 4 is set, this mechanism comprises guide rail 43, completely reflecting mirror 44, condenser lens 45 and slide 48, guide rail 43 is arranged on the inner side-wall of vacuum chamber 1 by support 42, slide 48 is slidably arranged on guide rail 43, completely reflecting mirror 44 is fixed on slide 48, condenser lens 45 is arranged on above condenser lens 45 by bracket 46 and guide rod 47, laser apparatus 41 is arranged on the outer side wall of vacuum chamber 1, the laser beam that laser apparatus 41 sends is incident upon completely reflecting mirror 44, be incident upon on condenser lens 45 after completely reflecting mirror 44 is launched entirely.Bracket 46 for fixed focus lenses 45 can move up and down along guide rod 47, by laser focusing to the surface of the polysilicon 11 of different thickness.
The above is only the preferred embodiment of the present invention, it should be pointed out that for those skilled in the art, can also make some improvement under the premise without departing from the principles of the invention, and these improvement also should be considered as protection scope of the present invention.
Claims (10)
1. the preparation method of a polysilicon surface metallic film, it is characterized in that: polysilicon chip and metal targets are connected to the positive pole of high-voltage pulse power source and negative pole and are placed in and be filled with in the vacuum chamber of argon gas, electric field between the two makes argon gas ionize, the argon ion bombardment metal targets formed, produce sputtering particle and be deposited on polysilicon chip surface, this polysilicon chip surface is within the interval time of high-voltage pulse power source, be subject to the scanning heating of laser, accelerate the infiltration of sputtering particle, and sputtering and LASER HEATING are back and forth carried out by the frequency cycle of high-voltage pulse, polysilicon chip surface is made to form metallic film.
2. the preparation method of a kind of polysilicon surface metallic film according to claim 1, is characterized in that: the vacuum tightness of described vacuum chamber reaches 5 × 10
-3below Pa; Argon gas is filled with to vacuum tightness 0.1-1Pa in vacuum chamber.
3. the preparation method of a kind of polysilicon surface metallic film according to claim 1, is characterized in that: the voltage of described high-voltage pulse power source is 500-1000V.
4. the preparation method of a kind of polysilicon surface metallic film according to claim 1, it is characterized in that: described laser is semiconductor laser, wavelength is 1064nm, and power is 30W-50W, and frequency is 500-2000Hz.
5. the preparation facilities of a polysilicon surface metallic film, it is characterized in that: comprise vacuum chamber (1), metal targets (31), magnet (33), laser apparatus (41), high-voltage pulse power source (5), argon bottle (6), vacuum pump (8), polysilicon (11) and for clamping and the fixture (10) driving polysilicon (11) to move, some described magnets (33) are arranged in vacuum chamber (1), metal targets (31) is placed on magnet (33), argon bottle (6) is communicated with vacuum chamber (1) respectively with vacuum pump (8), the positive and negative electrode of high-voltage pulse power source (5) is electrically connected with polysilicon (11) and metal targets (31) respectively, the corresponding hole of laser beam by vacuum chamber sidewall is arranged that laser apparatus (41) is launched, project on polysilicon (11).
6. the preparation facilities of polysilicon surface metallic film according to claim 1, it is characterized in that: described fixture (10) be arranged on make X, Y-motion driving mechanism on, this driving mechanism comprises X to driving mechanism and Y-direction driving mechanism, Y-direction driving mechanism is slidably connected to X to driving mechanism, and X is to driving mechanism vertical movement relatively, fixture (10) is arranged on Y-direction driving mechanism.
7. the preparation facilities of polysilicon surface metallic film according to claim 6, it is characterized in that: described X includes guide rail (21), leading screw (22), nut and motor (26) to driving mechanism and Y-direction driving mechanism, described leading screw (22) is fixedly connected with motor (26) rotating shaft, nut screw is connected on leading screw (22), and one end and guide rail (21) are slidably connected; Guide rail in described Y-direction running gear and motor are arranged on X on the nut in running gear, and described fixture (10) is arranged on the nut in Y-direction running gear.
8. the preparation facilities of polysilicon surface metallic film according to claim 1, it is characterized in that: in described vacuum chamber (1), be also provided with laser reflection mechanism (4), this mechanism comprises guide rail (43), completely reflecting mirror (44), condenser lens (45) and slide (48), described slide (48) is slidably arranged on guide rail (43), completely reflecting mirror (44) and condenser lens (45) are arranged on slide (48), and described laser beam is by completely reflecting mirror (44) and condenser lens (45) projecting at the most on crystal silicon (11).
9. the preparation facilities of polysilicon surface metallic film according to claim 1, it is characterized in that: be also provided with the shielding pressing plate (32) for shielding described magnets produce magnetic fields in described vacuum chamber (1), described shielding pressing plate (32) is pressed together in metal targets (31).
10. the preparation facilities of polysilicon surface metallic film according to claim 1, it is characterized in that: this preparation facilities also comprises cooling body, this refrigerating unit comprises watercooling jacket (38), cooling water tank (13), return water pipe (36) and water inlet pipe (37), described return water pipe (36) is connected with cooling water tank (13) with one end of water inlet pipe (37), the other end is connected with watercooling jacket (38), and described watercooling jacket (38) is arranged between adjacent two magnets (33).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510120322.4A CN104651793A (en) | 2015-03-19 | 2015-03-19 | Preparation device and method for metal film on surface of polycrystalline silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510120322.4A CN104651793A (en) | 2015-03-19 | 2015-03-19 | Preparation device and method for metal film on surface of polycrystalline silicon |
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| Publication Number | Publication Date |
|---|---|
| CN104651793A true CN104651793A (en) | 2015-05-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510120322.4A Pending CN104651793A (en) | 2015-03-19 | 2015-03-19 | Preparation device and method for metal film on surface of polycrystalline silicon |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111945122A (en) * | 2020-08-07 | 2020-11-17 | 安徽诚志显示玻璃有限公司 | TFT coating device |
| CN113073297A (en) * | 2021-03-23 | 2021-07-06 | 熔创金属表面科技(常州)有限公司 | Device for remanufacturing rotary silicon-aluminum target material and preparation method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111945122A (en) * | 2020-08-07 | 2020-11-17 | 安徽诚志显示玻璃有限公司 | TFT coating device |
| CN111945122B (en) * | 2020-08-07 | 2022-09-02 | 安徽诚志显示玻璃有限公司 | TFT coating device |
| CN113073297A (en) * | 2021-03-23 | 2021-07-06 | 熔创金属表面科技(常州)有限公司 | Device for remanufacturing rotary silicon-aluminum target material and preparation method thereof |
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Application publication date: 20150527 |
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