201127978 六、發明說明： 【發明所屬之技術領域】 本發明，係有關於磁控管濺鍍電極以及濺鍍裝置。 【先前技術】 於先前技術中，在磁控管方式的濺鍍裝置中，係具備 有磁控管濺鍍電極，而此磁控管濺鎪電極，係具備有磁控 管陰極單元，該磁控管陰極單元，係具備有與應處理之基 板作對向配置之標靶、和將此標靶之與基板相對向之側作 爲上方而被配置在標靶之下側處且在此標靶上方而形成隧 道狀之磁束的磁石單元。 而，當對於標靶施加負的直流電壓或者是交流電壓而 對標靶作濺鍍時，係藉由上述磁束而將在標靶前方所電離 之電子以及經由濺鍍所產生之二次電子作捕捉，而提高標 靶上方處之電子密度，並使此些之電子與被導入至真空腔 內之稀有氣體的氣體分子間之碰撞機率增加，藉由此，而 提升電漿密度。若依據此濺鍍裝置，則係有著例如並不會 .伴隨著處理基板之顯著的溫度上升便能夠使成膜速度提升 等之優點，近年來，在大面積之平面面板顯示器的製造工 程中，係被廣泛地利用在透明電導膜之形成等。 於此，當作爲標靶而使用平面視之略矩形狀者的情況 時，作爲磁石單元，係藉由專利文獻1而週知有下述一般 者：亦即是，係在被與標靶作平行配置之平面視略矩形狀 的支持板（軛）的上面中央處，沿著其之長邊方向而線狀 -5- 201127978 地配置中央磁石，並且，以將此中央磁石之周圍作包圍的 方式來涵蓋支持板上面之週緣全體地而配置標靶側之極性 係成爲相異的週邊磁石，而構成之。 在上述磁石單元中，於標靶之上面（被作濺銨之面） 的週緣區域處之磁束密度，係局部性地增高。亦即是，若 是對於沿著中央磁石之延長線上的磁場分布作觀察，則在 從中央磁石之長邊方向的兩端起而靠向內側的位置處，磁 場之垂直成分係成爲具備有1個的峰値。因此，在濺鍍面 之週緣區域處的濺鑛速率係提高，而能夠涵蓋基板全面地 得到略均一之薄膜，但是，在該區域處，標靶係被集中性 地作侵蝕（亦即是，係成爲標靶之優先被作濺鍍的區域） 。於此情況，會產生標靶之利用效率變低的問題。 因此，在此種濺鍍裝置中，從先前技術起，便進行有 將隧道狀之磁束的位置作改變來將標靶均一地作侵蝕的方 法（例如，參考專利文獻2 )。亦即是，將支持板之外型 尺寸形成爲較標靶而更小上一圈，並在濺鍍中，使磁石單 元在沿著標靶之寬幅方向（與標靶之長邊方向相正交的方 向）的2點之間而於同一平面上以特定之速度來作往返移 動。此時，係亦考慮有除了寬幅方向之外而亦使磁石單元 在標靶之長邊方向上作反覆移動的方法。 然而，係判明了：若是在濺鍍中而使磁石單元如同上 述一般地作往返移動，則會在標靶中產生局部性之侵蝕區 域。可以想見’此係因爲，磁石單元在一次的往返中係產 生有磁束密度爲高之部分的滯留時間相對上成爲較長的場 -6- 201127978 所（所謂的交叉點）之故。若是如此這般地而在標靶中產 生局部性之侵蝕區域，則其結果，標靶壽命係會顯著地變 短，並產生無法將標靶之利用效率提升的問題。 [先前技術文獻] [專利文獻] [專利文獻1]日本特開平7-3 4244號公報 [專利文獻2]日本特開2005-290550號公報 【發明內容】 [發明所欲解決之課題] 本發明，係有鑑於上述之點，而以提供一種：就算是 在濺鍍時而使磁石單元與標靶作相對性移動，亦不會在標 靶上產生局部性之侵蝕區域，而對於標靶之利用效率係爲 良好的磁控管濺鍍電極以及濺鍍裝置一事，作爲課題。 [用以解決課題之手段] 爲了解決上述課題，本發明之磁控管濺鍍電極，其特 徵爲，具備有：標靶，係在濺鍍室中而被與應處理之基板 作對向配置；和磁石單元，係將標靶之與基板相對向之側 作爲上側，並被配置在標靶之下側處，而在此標靶之上方 形成隧道狀之磁束；和移動手段，係反覆進行將磁石單元 從特定之起點起而相對於標靶作相對移動再回到前述起點 之動作，在磁石單元以外之處，更設置在直到回到前述起 201127978 點爲止的1個循環中而將磁束密度爲高之部分的滯留時間 變長之位置處的磁場強度局部性地降低之磁性遮罩。 若依據本發明，則由於係藉由磁性遮罩而使磁束密度 爲高之部分的滞留時間變長的位置處之磁場強度局部性的 降低，因此，在標靶中而產生局部性的侵蝕區域之情況係 被抑制，而能夠延長標靶壽命。其結果，與藉由在濺鍍時 而使磁石單元與標靶作相對性移動來將標靶之侵蝕區域擴 廣一事相輔相成地，而能夠將標靶之利用效率提升。 於此，磁束密度爲高之部分的滯留時間變長之位置， 就算是使用相同之磁石單元，亦可能會由於在濺鍍裝置中 所進行之製程條件（真空腔內之壓力、例如導入至真空腔 內之氣體的流量）等而改變。因此，在使上述位置處之磁 場強度降低的情況時，例如，亦可考慮有對於磁石單元之 構成作變更並將磁束密度作局部性的變更，但是，如此一 來，該作業係會明顯地變得繁雜。相對於此，在本發明中 ，由於係採用了將磁性遮罩設置在磁石單元以外之處的構 成，因此，不需要對於磁石單元本身之構成作改變，而爲 有利。 在本發明中，前述磁性遮罩，若是設爲貼附在被接合 於標靶之背板的下面處，則就算是在將本發明之磁控管電 極設置在濺鍍裝置中之後，亦能夠藉由簡單之作業來實現 使磁場強度局部性降低之構成，而爲理想。於此種情況， 只要一面使標靶與磁石單元作相對性移動，一面進行濺鍍 ，並特定出標靶面內之局部性的侵蝕區域，再將磁性遮罩 -8- 201127978 安裝於該位置處即可。 另外，在本發明中，例如，前述標靶，係爲平面視之 而爲矩形者’前述磁石單元，係由配置爲線狀之中央磁石 、和以將此中央磁石之周圍作包圍的方式而作了設置的在 標靶側之極性互爲相異的週邊磁石所構成，前述移動手段 ，係爲使磁石單元在標靶之寬幅方向以及長邊方向的至少 其中一方向上而於同一平面上作往返移動者。 又，爲了解決上述課題，本發明之濺鍍裝置，其特徵 爲’具備有：如申請專利範圍第丨項乃至第3項中之任一項 所記載之磁控管濺鑛電極；和能夠保持爲真空狀態之真空 腔、和將特定之氣體導入至此真空腔內之氣體導入手段； 和使對於標靶之電力投入成爲可能之濺鑛電源。 【實施方式】 以下，參考圖面，針對作爲應處理之基板S而使用在 平面面板顯示器之製作中所被使用之玻璃基板，並在其之 表面上而形成A1等之薄膜的情況作爲例子，來對於具備有 本發明之磁控管濺鍍電極C之濺鍍裝置SM作說明。 如圖1中所示一般，濺鍍裝置SM，例如係爲線內（in· line )式，並具備有能夠經由旋轉幫浦、渦輪分子幫浦等 之真空排氣手段（未圖示）來保持在特定之真空度的濺鍍 室1。在濺鍍室1之上部空間處，係被設置有基板搬送手段 2 °基板搬送手段2，係具備有週知之構造，例如，係具備 有裝著基板S之載體2 1，並對於驅動手段作間歇驅動，而 201127978 成爲能夠將基板S依序地搬送至後述之與標靶相對向的位 置處。 在濺鑛室1中，係被設置有氣體導入手段3。氣體導入 手段3，係通過中介設置有質量流控制器31之氣體管32而 被與氣體源33相通連’並能夠將由氬等之稀有氣體所成的 '0 濺鍍氣體或者是在反應性濺鍍時所使用之反應氣體以一定 之流量來導入至濺鍍室1內。作爲反應氣體，係因應於欲 在被處理基板S上所成膜之薄膜的組合而作選擇，而使用 有包含氧、氮、碳、氫之氣體、臭氧、水或者是過氧化氫 、又或是此些之混合氣體等。在濺鍍室1之下側，係被配 置有磁控管職鍍電極c。 磁控管濺鍍電極C，係具備有以面臨濺鍍室1的方式而 作了設置的略直方體（平面視矩形）之標靶41和磁石單元 5。於以下，係將從標靶41而朝向基板S之方向設爲「上」 ，並將從基板S而朝向標靶41之方向作爲「下」，來進行 說明。又，將標靶之寬幅方向作爲X方向，並將與此寬幅 方向相正交之標靶41的長邊方向作爲Y方向，來進行說明 〇 標靶41，係因應於A1合金、Mo或者是IT Ο等之欲在處 理基板S上成膜的薄膜之組成，而藉由週知之方法來分別 製作之。標靶41之相當於上面的濺鍍面411之面積，係被 設定爲較處理基板S之外型尺寸更大。又，在標靶41之下 面，係隔著銦或者是錫等之接合材，而被接合有將標靶41 作冷卻之背板42。而後，在將標靶41接合於背板42上的狀 -10- 201127978 態下’來隔著絕緣板4 3而裝著在框架4 4上。 在將標靶41配置在濺鍍室1內之後，在標靶41之濺鑛 面411的周圍，係被裝著有被作了接地並達成作爲陽極之 功能的遮罩45。又，在標靶處，係被連接有從具備週知之 構造的濺鍍電源E而來之輸出端，並成爲被施加有負的直 流電壓或者是高頻電壓。 如圖2中所示一般，磁石單元5，係與標靶41之濺鍍面 4 1 1相平行地而被作設置，並具備有將磁石之吸附力作放 大的由磁性材料製之平板所構成的支持板（軛）51。在支 持板5 1上，以位置在延伸於支持板5 1之長邊方向的中心線 上的方式而被配置之中央磁石52、和以將此中央磁石52之 周圍作包圍的方式而沿著支持板5 1之上面外周來配置成環 狀的週邊磁石5 3，係以將標靶側之極性作改變的方式而被 作設置。係以使中央磁石52之換算爲同磁化時的體積和將 其之周圍作包圍的週邊磁石53之換算爲同磁化時的體積之 和（週邊磁石：中央磁石：週邊磁石=1: 2: 1，參考圖1 )之程度的方式，來作設計。藉由此，在標靶41之上方， 係形成有取得了平衡之隧道狀的磁束Ml、M2 (參考圖1) 。中央磁石5 2以及週邊磁石5 3，係爲鈸磁石等之週知之物 ，此些之中央磁石52以及週邊磁石53，係可爲一體化者， 或者是亦可爲將特定體積之磁石片作複數列設置所構成者 〇 而後，藉由基板搬送手段2來將基板S搬送至與標靶41 相對向之位置處，並經由氣體導入手段3而將特定之濺鍍 -11 - 201127978 氣體或者是反應氣體作導入，之後，經由濺鍍電源E來將 負的直流電壓或者是高頻電壓施加於標靶41處。藉由此’ 而形成與基板S以及標靶4 1相垂直之電場，並在標靶4 1之201127978 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a magnetron sputtering electrode and a sputtering apparatus. [Prior Art] In the prior art, in a magnetron sputtering device, a magnetron sputtering electrode is provided, and the magnetron sputtering electrode is provided with a magnetron cathode unit. The control cathode unit is provided with a target disposed opposite to the substrate to be processed, and a side of the target opposite to the substrate is disposed above the target and above the target And a magnet unit that forms a tunnel-shaped magnetic flux. However, when a target is sputtered by applying a negative DC voltage or an AC voltage to the target, the electrons ionized in front of the target and the secondary electrons generated by sputtering are used as the magnetic flux. Capturing increases the electron density above the target and increases the probability of collision between such electrons and gas molecules introduced into the rare gas in the vacuum chamber, thereby increasing the plasma density. According to the sputtering apparatus, for example, there is no advantage that the film formation speed can be improved with a significant temperature rise of the processing substrate. In recent years, in the manufacturing process of a large-area flat panel display, It is widely used in the formation of transparent conductive films and the like. In the case where a rectangular shape is used as the target, the magnetite unit is known from the patent document 1 as follows: that is, the target is The center of the upper side of the parallel support plate (yoke) is arranged in a parallel manner, and the central magnet is arranged linearly along the longitudinal direction thereof, and the central magnet is surrounded by the central magnet. The method is to cover the periphery of the support plate and configure the polarity of the target side to be a different peripheral magnet. In the above magnet unit, the magnetic flux density at the peripheral region of the upper surface of the target (the surface to be splashed with ammonium) is locally increased. In other words, when the magnetic field distribution along the extension line of the central magnet is observed, the vertical component of the magnetic field is provided at a position that is inward from both ends in the longitudinal direction of the central magnet. The peak. Therefore, the sputtering rate at the peripheral region of the sputtering surface is improved, and it is possible to cover the substrate to obtain a substantially uniform film, but at this region, the target system is concentratedly eroded (that is, It is the preferred area for the target to be sputtered). In this case, there arises a problem that the utilization efficiency of the target becomes low. Therefore, in such a sputtering apparatus, from the prior art, a method of uniformly oscillating the target by changing the position of the tunnel-shaped magnetic flux is performed (for example, refer to Patent Document 2). That is, the outer dimension of the support plate is formed to be smaller than the target, and in the sputtering, the magnet unit is in the wide direction along the target (in the direction of the long side of the target) Between two points of the orthogonal direction) and reciprocating at a specific speed on the same plane. At this time, a method of moving the magnet unit in the longitudinal direction of the target in addition to the wide direction is also considered. However, it has been found that if the magnet unit is reciprocated as described above during sputtering, a localized erosion zone is created in the target. It is conceivable that this is because the magnetite unit generates a field having a high magnetic flux density in a round trip, and the residence time is relatively long, which is a relatively long field -6-201127978 (so-called intersection). If such a localized erosion region is generated in the target, the target life is significantly shortened, and the problem that the utilization efficiency of the target cannot be improved is caused. [PRIOR ART DOCUMENT] [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. 2005-290550. In view of the above, it is provided that a magnetite unit and a target are relatively moved even when sputtered, and a localized erosion region is not generated on the target, but for the target It is a problem that the efficiency is a good magnetron sputtering electrode and a sputtering device. [Means for Solving the Problems] In order to solve the above problems, a magnetron sputtering electrode according to the present invention is characterized in that: a target is provided in a sputtering chamber and disposed opposite to a substrate to be processed; And the magnet unit, which is the upper side of the target opposite to the substrate, and is disposed at the lower side of the target, and forms a tunnel-shaped magnetic beam above the target; and the moving means is repeated The magnet unit moves relative to the target from a specific starting point and then returns to the starting point. In addition to the magnet unit, the magnetic flux density is set in one cycle up to the point of 201127978. A magnetic mask in which the magnetic field strength at a position where the retention time of the high portion becomes long is locally reduced. According to the present invention, since the localization of the magnetic field strength at a position where the residence time of the portion where the magnetic flux density is high is reduced by the magnetic mask, a localized erosion region is generated in the target. The situation is suppressed and the target life can be extended. As a result, it is possible to enhance the utilization efficiency of the target by complementing the erosion region of the target by relatively moving the magnet unit and the target at the time of sputtering. Here, the position where the retention time of the portion where the magnetic flux density is high becomes long, even if the same magnet unit is used, the process conditions (the pressure in the vacuum chamber, for example, introduction into the vacuum) may be performed in the sputtering apparatus. The flow rate of the gas in the chamber is changed and the like. Therefore, when the magnetic field strength at the above position is lowered, for example, it is also possible to change the configuration of the magnet unit and change the magnetic flux density locally. However, the operation system will obviously It has become complicated. On the other hand, in the present invention, since the magnetic mask is disposed outside the magnet unit, it is not necessary to change the configuration of the magnet unit itself, which is advantageous. In the present invention, the magnetic mask can be attached to the lower surface of the back sheet to be bonded to the target, even after the magnetron electrode of the present invention is disposed in the sputtering apparatus. It is desirable to realize a configuration that reduces the local strength of the magnetic field by a simple operation. In this case, as long as the target and the magnet unit are moved relative to each other, sputtering is performed, and a localized erosion region in the target surface is specified, and the magnetic mask -8-201127978 is installed at the position. You can do it. Further, in the present invention, for example, the target is a rectangular magnet in a plan view, and the magnet unit is a central magnet arranged in a line shape and surrounded by the center magnet. The peripheral magnets having mutually different polarities on the target side are provided, and the moving means is such that the magnet unit is on the same plane in at least one of the wide direction and the long side direction of the target. Move back and forth. Further, in order to solve the above problems, the sputtering apparatus of the present invention is characterized in that: the magnetron sputtering electrode as described in any one of the above claims; A vacuum chamber in a vacuum state, and a gas introduction means for introducing a specific gas into the vacuum chamber; and a sputtering power source that makes power input to the target possible. [Embodiment] Hereinafter, a case where a glass substrate to be used in the production of a flat panel display is used as a substrate S to be processed, and a film of A1 or the like is formed on the surface thereof will be described as an example. A description will be given of a sputtering apparatus SM having the magnetron sputtering electrode C of the present invention. As shown in FIG. 1, the sputtering apparatus SM is, for example, an in-line type, and is provided with a vacuum exhausting means (not shown) that can be driven by a rotary pump, a turbo molecular pump, or the like. The sputtering chamber 1 is maintained at a specific degree of vacuum. In the upper space of the sputtering chamber 1, a substrate transporting means 2 is provided, and the substrate transporting means 2 is provided with a well-known structure. For example, the carrier 2 is provided with a substrate S, and is provided for the driving means. Intermittent driving, and 201127978 enables the substrate S to be sequentially transported to a position facing the target, which will be described later. In the splashing chamber 1, a gas introduction means 3 is provided. The gas introduction means 3 is connected to the gas source 33 by interposing the gas pipe 32 of the mass flow controller 31 and is capable of forming a '0 sputtering gas made of a rare gas such as argon or reactive splashing. The reaction gas used in the plating is introduced into the sputtering chamber 1 at a constant flow rate. The reaction gas is selected in accordance with a combination of films to be formed on the substrate S to be processed, and a gas containing oxygen, nitrogen, carbon, hydrogen, ozone, water or hydrogen peroxide, or It is such a mixed gas or the like. On the lower side of the sputtering chamber 1, a magnetron plating electrode c is disposed. The magnetron sputtering electrode C is provided with a target 41 and a magnet unit 5 having a substantially rectangular parallelepiped (planar rectangular shape) provided in such a manner as to face the sputtering chamber 1. Hereinafter, the direction from the target 41 toward the substrate S will be referred to as "upper", and the direction from the substrate S toward the target 41 will be referred to as "lower". Further, the wide target direction of the target is referred to as the X direction, and the longitudinal direction of the target 41 orthogonal to the wide direction is referred to as the Y direction, and the target target 41 is explained in response to the A1 alloy and Mo. Alternatively, it is a composition of a film which is intended to be formed on the substrate S by IT, and is separately produced by a known method. The area of the target 41 corresponding to the upper sputtering surface 411 is set to be larger than the size of the processing substrate S. Further, under the target 41, a backing plate 42 for cooling the target 41 is bonded to the bonding material such as indium or tin. Then, the target 41 is joined to the back plate 42 in a state of -10-201127978, and is attached to the frame 4 4 via the insulating plate 43. After the target 41 is placed in the sputtering chamber 1, a mask 45 which is grounded and functions as an anode is attached around the splash surface 411 of the target 41. Further, at the target, an output terminal from a sputtering power source E having a well-known structure is connected, and a negative DC voltage or a high-frequency voltage is applied. As shown in Fig. 2, the magnet unit 5 is disposed in parallel with the sputtering surface 41 of the target 41, and is provided with a flat plate made of a magnetic material for amplifying the adsorption force of the magnet. Support plate (yoke) 51. On the support plate 51, the central magnet 52 disposed so as to be positioned on the center line extending in the longitudinal direction of the support plate 51, and the periphery of the central magnet 52 are supported along the support The peripheral magnets 5 3 arranged in a ring shape on the outer periphery of the upper surface of the plate 5 1 are provided so as to change the polarity of the target side. The conversion of the central magnet 52 to the volume at the same magnetization and the surrounding magnet 53 surrounded by the surrounding magnet are converted into the sum of the volumes at the same magnetization (peripheral magnet: central magnet: peripheral magnet = 1: 2: 1) , refer to Figure 1) to the extent of the design. Thereby, above the target 41, magnetic fluxes M1 and M2 having a balanced tunnel shape are formed (refer to FIG. 1). The central magnet 5 2 and the peripheral magnet 5 3 are well-known objects such as neodymium magnets, and the central magnet 52 and the peripheral magnet 53 may be integrated, or may be a magnet of a specific volume. After the plurality of columns are arranged, the substrate S is transported to the position facing the target 41 by the substrate transfer means 2, and the specific sputtering -11 - 201127978 gas is or The reaction gas is introduced, and then a negative DC voltage or a high-frequency voltage is applied to the target 41 via the sputtering power source E. By this, an electric field perpendicular to the substrate S and the target 4 1 is formed, and is in the target 4 1
上方產生電漿，而使標靶41被作濺鍍，藉由此，在基板S 表面上係被形成特定之薄膜。此時，係藉由磁束Ml、M2 ，而將在標靶上方所電離之電子以及經由濺鍍所產生之二 次電子作捕捉，而提高標靶前方處之電子密度，並使此些 之電子與被導入至真空腔1內之濺鍍氣體的氣體分子間之 碰撞機率增加，藉由此，而提升標靶41上方處之電漿密度 〇 另外，雖並未特別圖示說明，但是，在上述磁石單元 5中，若是對於沿著中央磁石52之長邊方向上的磁場分布 作觀察，則在從中央磁石52之長邊方向的兩端起而靠向內 側的位置處，磁場之垂直成分係成爲具備有1個的峰値。 若是在此狀態下而藉由濺鍍來形成薄膜，則係能夠涵蓋基 板S全面而形成略均一之薄膜。另一方面，由於在濺鍍面 411之週緣區域處的濺鍍速率係被局部性的提高，因此， 在該區域處，標靶4 1係被集中性地侵蝕。 故而，係將支持板5 1之外型尺寸形成爲較標靶而更小 上一圈，並且，在支持板51上附加設置移動手段6，而在 濺鍍中，使磁石單元5在X方向以及Y方向上而在同~平面 上以特定之速度且以一定之衝程（X方向：D1)來作往返 移動。於此情況，朝向X方向以及Y方向之移動，係可分 別地進行，又，亦可使朝向X方向以及Y方向之移動作同 -12- 201127978 步（於此情況’磁石單元5，係從圖1中之以實線所展示之 位置而以描繪出特定之橢圓狀之圓弧的方式而移動，並到 達圖1中之以一點鍊線所展示的位置處，再以描繪圓弧的 方式而作移動並回到位置A處）。藉由此移動手段6，磁石 單元5係從特定之起點起而對於標靶41作相對移動，並回 到前述起點，且反覆進行此動作。 移動手段6，係具備有：在基底板61之平坦的上面而 涵蓋標靶41之長邊方向全長地在水平方向上延伸並且以較 標靶4 1之寬幅更廣的間隔所設置之左右一對的軌道構件 62R' 62L，和可自由滑動地而與軌道構件62R、62L作卡 合，並且具備有未圖示之驅動馬達的滑動構件63，和以藉 由兩滑動構件63、63而被作支持的方式來設置並且具備有 驅動馬達Μ之進送螺桿64。而，在進送螺桿64處，係螺合 有被垂直設置在支持板51之下面中央處的螺帽構件65。 另外，在濺鍍中，當藉由移動手段6而使磁石單元5作 了移動的情況時，如圖3中所示一般，係產生有在藉由磁 石單元5所形成了的磁束Μ 1、M2中之磁束密度爲高的部分 之滯留時間相較於其他場所而成爲較長的場所處（所謂的 交叉點C Ρ，參考圖3 ( a ))。於此情況，在標靶4 1之長邊 方向略中央部處，係在其之寬幅方向上而被略均等地作侵 蝕（參考圖3 ( b )) ’但是，在滯留時間變長的場所處， 標靶4 1之侵蝕量係會局部性地變多，如此一來，標靶4 1之 爵命係會變短（參考圖3(c))。 因此，係一面使標靶4 1與磁石單元5作相對性移動， -13- 201127978 一面進行濺鍍，並特定出標靶41面內之局部性的侵蝕區域 ，再與該位置相對應地，而在背板42之下面，貼附上特定 面積之磁性遮罩7(參考圖2)。磁性遮罩7，只要是最大 透磁率爲高且具備有剛性之材料即可，例如，係可使用 SUS 43 0等之具備有磁性的不鏽鋼、能夠使磁場之衰減效果 增商的純鐵、鎳等之金屬、高導磁合金（permalloy)或超 高導磁合金等之透磁率爲高的合金。又，磁性遮罩之厚度 ，係對於其之材質或者是在交叉點處之標靶41的侵蝕量作 考慮，而在1.0〜5.0mm之範圍內作適宜設定。 若依據上述構成之磁控管濺鍍電極C，則由於係藉由 磁性遮罩7而使磁束密度爲高之部分的滯留時間變長的位 置處之磁場強度局部性的降低，因此，在標靶4 1中的局部 性之侵蝕區域的產生係被抑制，而能夠延長標靶壽命。其 結果，與藉由在濺鍍時而使磁石單元5與標靶41作相對性 移動來將標靶41之侵蝕區域擴廣一事相輔相成地，而能夠 將標靶41之利用效率提升。 又，磁束密度爲高之部分的滯留時間變長之位置，就 算是使用相同之磁石單元5，亦可能會由於製程條件（真 空腔內之壓力、例如導入至真空腔內之氣體的流量）等而 改變，但是，由於係採用將磁性遮罩7設置在磁石單元5以 外之部分處的構成，因此，係並不需要改變磁石單元5自 身之構成，而爲有利。又，就算是在將磁控管濺鍍電極C 設置在濺鍍室1內之後，亦能夠藉由簡單的作業來實現將 磁場強度局部性降低之構成。 -14· 201127978 爲了對於以上之效果作確認，係進行了以下之實驗。 作爲標靶4 1，係使用A1，並藉由週知之方法而成形爲 218mmx3400mmx厚度16mm之平面視略長方形，而接合在 背板42上。又，作爲磁石組裝體之支持板5 1，係使用具備 有100mmx3390mm之外型尺寸者，並在各支持板51上，設 置了沿著標靶4 1之長邊方向的棒狀之中央磁石5 2、和沿著 支持板51之外周的週邊磁石53。此時，在從標靶41之長邊 方向的兩端起而距離約51mm的位置處，磁場之垂直成分 係存在有1個的峰値P (約210G)。 而後，作爲基板S，係使用具備有約3100mmx2900mm 之外型尺寸的玻璃基板，又，作爲濺鍍條件，係以將被作 了真空排氣之濺鍍室1內的壓力保持在0.3Pa的方式，來控 制質量流控制器31，並將身爲濺鍍氣體之氬氣導入至濺鍍 室1內。標靶4 1與玻璃基板間之距離，係設爲2 1 0mm，對 於標靶41之投入電力（直流電壓），係設爲76kW，並一 直濺鍍至達到63 0 Ok Wh爲止。使磁石單元5在X方向上以 15mm/sec之速度來以70mm之衝程而作往返移動。 若是藉由上述條件而在基板表面上形成A1膜，則若是 對於標靶之寬幅方向中央的距離標靶之長邊方向端部 1 2 0mm的位置處之標靶4 1的侵蝕量作觀察，則與其之週邊 相比較，係確認到該處被侵蝕了約1 7 0 %之深度。因此，係 在背板42之下面中央處，將1 20 x 50mm且厚度爲2mm之由 SUS43 0所製的磁性遮罩7，貼附在距離標靶之長邊方向端 部8 0mm的位置處。之後，藉由與上述相同之條件而進行 -15- 201127978 了濺鍍’其結果，係確認到；局部性之標靶的侵蝕係被防 止，而能夠將標靶涵蓋其之略全面地來作侵蝕。 接著’作爲標靶41，係使用A1，並藉由週知之方法而 成形爲180mmx950mmx厚度16mm之平面視略長方形，而接 合在背板42上。又，作爲磁石組裝體之支持板51，係使用 具備有l〇〇mmx880mm之外型尺寸者，並在各支持板51上， 設置了沿著標靶41之長邊方向的棒狀之中央磁石52、和沿 著支持板51之外周的週邊磁石53。此時，在從標靶41之長 邊方向的兩端起而距離約61mm的位置處，磁場之垂直成 分係存在有1個的峰値P (約1 3 6G )。 作爲濺鍍條件，以將被作了真空排氣之濺鍍室1內的 壓力保持爲〇.5Pa的方式，來對於質量流控制器31作控制 並將身爲濺鍍氣體之氬氣導入至濺鍍室1內，並且，將對 於標靶41之投入電力（直流電壓）設爲13.6kW，而一直濺 鍍至達到2600kWh爲止。將磁石單元5之移動速度設爲 15mm/SeC，將X方向之衝程設爲60mm，並將Y方向之衝 程設爲50mm，而以使磁石單元5從特定之起點起來對於標 靶41作相對移動並回到前述起點的方式，來使其在X方向 以及Y方向上作了移動。 若是藉由上述條件而在基板表面上形成A1膜，則若是 對於標靶41之寬幅方向中央的距離標靶之長邊方向端部 100mm的位置處之標靶41的侵蝕量作觀察，則與其之週邊 相比較，係確認到該處被侵蝕了約1 70%之深度。因此，係 在背板42之下面中央處，將1 20 x 50mm且厚度爲2mm之由 -16- 201127978 SUS430所製的磁性遮罩7，貼附在距離標靶之長邊方向端 部55mm的位置處。而後，在藉由與上述相同之條件而進 行了濺鍍後，若是對於標靶41之寬幅方向中央的距離標靶 之長邊方向端部100mm的位置處之標靶41的侵蝕量作觀察 ，則與其之週邊相比較，係爲約1 1 〇%，而確認到：就算是 使其在X方向以及Y方向上作了移動的情況時，局部性之 標靶的侵蝕亦係被防止，而能夠將標靶涵蓋其之略全面地 來略均等地作侵蝕。 以上，雖係針對具備有本發明之實施形態的磁控管濺 鎪電極C之濺鍍裝置SM作了說明，但是，本發明，係並不 被限定於上述形態者。在上述實施形態中，雖係針對將標 靶設爲平面視矩形，並使磁石單元5在X方向以及Y方向上 而同步地作驅動者作了說明，但是，係並不被限定於此。 例如，在如同使用圓形的標靶並且將從標靶而作了偏心的 位置作爲旋轉中心而一面將磁石單元作旋轉驅動一面進行 濺鍍時的情況一般’只要是將從特定之起點起來對於標靶 而作相對移動並回到前述起點處一事反覆進行，並在使磁 石單元5移動時會產生磁束密度爲高的部分之滯留時間變 長的位置者，則均可適用本發明來將標靶之利用效率提升 〇 又’在上述實施形態中，雖係針對在1枚的標粑之下 方而設置1個的磁石單元5之情況爲例而作了說明，但是， 係並不被限定於此’就算是在1枚的標祀之下方而設置複 數個的磁石單兀5或者是在複數枚的標祀之下方設置1個的 -17- 201127978 磁石單元5等等的情況中，亦可適用本發明。 進而，在上述實施形態中，係針對使磁石單元5 _ @ 對於標靶而進行相對移動一面進行濺鍍，並特定出交^點 ，而將磁性遮罩7貼附在背板42上的情況爲例，而作了說 明，但是，係並不被限定於此。磁性遮罩7，只要是設置 在磁石單元5以外之處者即可，亦可設爲藉由省略圖示之 支持構件來將磁性遮罩7中介設置在標靶41與磁石單元5之 間。另一方面，交叉點，係亦可從在使磁石單元5作了移 動時之磁束變化的模擬而特定出來，在此種情況時，係亦 可設爲預先在背板42之下面形成磁性遮罩7安裝用之凹部 ，並進行螺絲鎖合。 【圖式簡單說明】 [圖1 ]對於本發明之濺鏟裝置作模式性說明之圖。 [圖2]對於磁石單元作說明之平面圖。 [圖3 ]( a )係爲對於當使磁石單元對於標靶而作相對 移動時之磁束的變化作模式性說明之圖。（b )係爲對於 標靶之侵蝕作模式性說明的沿著圖3 ( a )之B-B線的剖面 圖。（c )係爲對於標靶之侵蝕作模式性說明的沿著圖3 ( a)之C-C線的剖面圖。 【主要元件符號說明】 SM :濺鍍裝置 C:磁控管濺鍍電極 -18- 201127978 1 :濺鍍室 4 1 :標靶 42 :背板 5 :磁石單元 5 2 :中央磁石 5 3 :週邊磁石 6 _·移動手段 7 :磁性遮罩 3 :氣體導入手段 E :濺鍍電源 S :基板 Μ1、Μ 2 :磁束A plasma is generated on the upper side, and the target 41 is sputtered, whereby a specific film is formed on the surface of the substrate S. At this time, the electrons ionized above the target and the secondary electrons generated by the sputtering are captured by the magnetic fluxes M1 and M2, thereby increasing the electron density in front of the target and making the electrons The probability of collision with the gas molecules of the sputtering gas introduced into the vacuum chamber 1 is increased, whereby the plasma density at the top of the target 41 is raised, and although not specifically illustrated, In the magnet unit 5, when the magnetic field distribution in the longitudinal direction of the central magnet 52 is observed, the vertical component of the magnetic field is located at the inner side from the both ends in the longitudinal direction of the central magnet 52. It has a peak of one. If the film is formed by sputtering in this state, it is possible to cover the entire surface of the substrate S to form a slightly uniform film. On the other hand, since the sputtering rate at the peripheral region of the sputtering surface 411 is locally increased, the target 41 is concentratedly eroded at this region. Therefore, the outer shape of the support plate 51 is formed to be smaller than the target, and the moving means 6 is additionally provided on the support plate 51, and in the sputtering, the magnet unit 5 is placed in the X direction. And the Y direction and the reciprocating movement at a specific speed and a certain stroke (X direction: D1) on the same plane. In this case, the movement in the X direction and the Y direction can be performed separately, or the movement in the X direction and the Y direction can be made the same as -12-201127978 (in this case, the magnet unit 5, the slave In Fig. 1, the position shown by the solid line is moved in such a manner as to depict a specific elliptical arc, and reaches the position shown by a little chain line in Fig. 1, and then the arc is drawn. And move and return to position A). By means of the moving means 6, the magnet unit 5 moves relative to the target 41 from a specific starting point, returns to the starting point, and repeats this action. The moving means 6 is provided on the flat upper surface of the base plate 61 so as to extend in the horizontal direction over the entire length in the longitudinal direction of the target 41 and to be disposed at a wider interval than the width of the target 41. A pair of rail members 62R' 62L and a slide member 63 that is slidably engaged with the rail members 62R, 62L and provided with a drive motor (not shown), and by the two slide members 63, 63 It is provided in a supported manner and is provided with a feed screw 64 having a drive motor. Further, at the feed screw 64, a nut member 65 which is vertically disposed at the center of the lower surface of the support plate 51 is screwed. Further, in the case of sputtering, when the magnet unit 5 is moved by the moving means 6, as shown in Fig. 3, the magnetic flux Μ formed by the magnet unit 5 is generated. The residence time of the portion in which the magnetic flux density is high in M2 becomes a longer place than in other places (so-called intersection C Ρ , refer to FIG. 3 ( a )). In this case, at the central portion of the longitudinal direction of the target 41, it is slightly equalized in the width direction thereof (refer to FIG. 3(b)) 'However, the residence time becomes longer. At the site, the amount of erosion of the target 4 1 will be locally increased, and as a result, the target of the target 41 will become shorter (refer to Fig. 3 (c)). Therefore, while the target 4 1 and the magnet unit 5 are relatively moved, -13-201127978 is sputtered, and a localized erosion region in the surface of the target 41 is specified, and corresponding to the position, On the underside of the backing plate 42, a magnetic mask 7 of a specific area is attached (refer to FIG. 2). The magnetic mask 7 may be a material having a maximum magnetic permeability and a rigidity. For example, a stainless steel having magnetic properties such as SUS 43 0 or a pure iron or nickel capable of increasing the attenuation effect of a magnetic field can be used. An alloy having a high magnetic permeability such as a metal, a permalloy or an ultrahigh magnetic alloy. Further, the thickness of the magnetic mask is preferably set in the range of 1.0 to 5.0 mm in consideration of the material thereof or the amount of erosion of the target 41 at the intersection. When the magnet C is sputtered according to the above-described configuration, the magnetic field strength at the position where the retention time of the portion where the magnetic flux density is high is lowered by the magnetic mask 7 is reduced. The generation of localized erosion regions in the target 41 is suppressed, and the target life can be extended. As a result, the utilization efficiency of the target 41 can be improved by complementing the expansion of the erosion region of the target 41 by relatively moving the magnet unit 5 and the target 41 at the time of sputtering. Further, when the residence time of the portion where the magnetic flux density is high is long, even if the same magnet unit 5 is used, the process conditions (pressure in the vacuum chamber, for example, the flow rate of the gas introduced into the vacuum chamber) may be used. However, since the configuration in which the magnetic mask 7 is provided at a portion other than the magnet unit 5 is employed, it is advantageous to change the configuration of the magnet unit 5 itself. Further, even after the magnetron sputtering electrode C is placed in the sputtering chamber 1, the configuration in which the magnetic field strength is locally lowered can be realized by a simple operation. -14· 201127978 In order to confirm the above effects, the following experiments were carried out. As the target 4 1, A1 was used, and it was formed into a rectangular shape of 218 mm x 3400 mm x 16 mm thick by a known method, and joined to the back plate 42. Further, as the support plate 51 of the magnet assembly, a size of 100 mm x 3390 mm is used, and a rod-shaped central magnet 5 along the longitudinal direction of the target 4 1 is provided on each of the support plates 51. 2. A peripheral magnet 53 along the periphery of the support plate 51. At this time, at a position of about 51 mm from both ends in the longitudinal direction of the target 41, there is one peak 値P (about 210 G) in the vertical component of the magnetic field. Then, as the substrate S, a glass substrate having a size of about 3100 mm x 2900 mm is used, and as a sputtering condition, the pressure in the sputtering chamber 1 to be vacuum-exhausted is maintained at 0.3 Pa. The mass flow controller 31 is controlled to introduce argon gas as a sputtering gas into the sputtering chamber 1. The distance between the target 4 1 and the glass substrate was set to 210 mm, and the input power (DC voltage) to the target 41 was set to 76 kW, and was directly sputtered until it reached 63 0 Ok Wh. The magnet unit 5 was reciprocated in the X direction at a speed of 15 mm/sec with a stroke of 70 mm. If the A1 film is formed on the surface of the substrate by the above conditions, the amount of erosion of the target 4 1 at the position in the longitudinal direction of the target in the longitudinal direction at the end of the target at a distance of 1 0 0 mm is observed. , compared with its surroundings, it was confirmed that it was eroded by a depth of about 170%. Therefore, at the center of the lower surface of the backing plate 42, a magnetic mask 7 made of SUS43 0 of 1 20 x 50 mm and a thickness of 2 mm is attached at a position of 80 mm from the end of the long side direction of the target. . After that, by the same conditions as above, -15-201127978 Sputtering was performed, and it was confirmed that the local target erosion was prevented, and the target could be slightly comprehensively covered. erosion. Next, as the target 41, A1 was used, and it was formed into a rectangular shape of 180 mm x 950 mm x 16 mm in thickness by a known method, and was bonded to the back plate 42. Further, as the support plate 51 of the magnet assembly, a size of 10 mm×880 mm is used, and a rod-shaped central magnet along the longitudinal direction of the target 41 is provided on each of the support plates 51. 52. and a peripheral magnet 53 along the outer circumference of the support plate 51. At this time, at a position of about 61 mm from both ends in the longitudinal direction of the target 41, there is one peak 値P (about 136 G) in the vertical component of the magnetic field. As the sputtering condition, the mass flow controller 31 is controlled to introduce the argon gas as a sputtering gas to the pressure of the vacuum chamber 1 in which the vacuum is evacuated to 〇5 Pa. In the sputtering chamber 1, the input power (DC voltage) to the target 41 was set to 13.6 kW, and sputtering was continued until 2600 kWh. The moving speed of the magnet unit 5 is set to 15 mm/SeC, the stroke in the X direction is set to 60 mm, and the stroke in the Y direction is set to 50 mm, so that the magnet unit 5 is moved relative to the target 41 from a specific starting point. And returning to the aforementioned starting point to move it in the X direction and the Y direction. When the A1 film is formed on the surface of the substrate by the above-described conditions, the amount of erosion of the target 41 at the position of the center of the target 41 in the width direction of the target at a distance of 100 mm from the end in the longitudinal direction of the target is observed. Compared with its surroundings, it was confirmed that it was eroded by a depth of about 170%. Therefore, a magnetic mask 7 made of -16-201127978 SUS430 of 1 20 x 50 mm and a thickness of 2 mm is attached to the center of the back side of the backing plate 42 at 55 mm from the end of the long side of the target. Location. Then, after the sputtering is performed under the same conditions as described above, the amount of erosion of the target 41 at the position of the center of the wide direction of the target 41 at a distance of 100 mm from the end of the target in the longitudinal direction is observed. , compared with the surrounding area, it is about 11%, and it is confirmed that even if it is moved in the X direction and the Y direction, the erosion of the local target is prevented. It is possible to erode the target slightly and comprehensively. Although the sputtering apparatus SM having the magnetron sputtering electrode C according to the embodiment of the present invention has been described above, the present invention is not limited to the above embodiment. In the above-described embodiment, the description has been made on the case where the target is a plan view rectangle and the magnet unit 5 is driven in the X direction and the Y direction in synchronization. However, the present invention is not limited thereto. For example, when sputtering is performed while rotating a magnet unit as a center of rotation as a center of rotation using a circular target as a center of rotation, generally, as long as it is from a specific starting point, When the target moves relative to the starting point and returns to the starting point, and the position where the retention time of the portion where the magnetic flux density is high is increased when the magnet unit 5 is moved, the present invention can be applied to the standard. In the above-described embodiment, the case where one magnet unit 5 is provided under one of the standards is described as an example. However, the present invention is not limited to In this case, even if a plurality of magnets 兀 5 are placed under one of the labels or a -17-201127978 magnet unit 5 or the like is provided under the plurality of labels, The present invention is applicable. Further, in the above-described embodiment, the magnet unit 7 is sputter-plated while moving the magnet unit 5 _ @ relative to the target, and the magnetic mask 7 is attached to the backing plate 42 by specifying the intersection. Although it is explained as an example, it is not limited to this. The magnetic mask 7 may be provided outside the magnet unit 5, and the magnetic mask 7 may be interposed between the target 41 and the magnet unit 5 by a support member (not shown). On the other hand, the intersection can be specified from the simulation of the change of the magnetic flux when the magnet unit 5 is moved. In this case, it is also possible to form the magnetic cover under the back plate 42 in advance. The cover 7 is fitted with a recess and screwed. BRIEF DESCRIPTION OF THE DRAWINGS [Fig. 1] A schematic illustration of a splash shovel apparatus of the present invention. [Fig. 2] A plan view illustrating a magnet unit. [Fig. 3] (a) is a diagram for schematically explaining a change of a magnetic flux when a magnet unit is relatively moved with respect to a target. (b) is a cross-sectional view taken along line B-B of Fig. 3(a), which is a schematic description of the erosion of the target. (c) is a cross-sectional view taken along line C-C of Fig. 3(a), which is a schematic illustration of the erosion of the target. [Main component symbol description] SM: Sputtering device C: Magnetron sputtering electrode-18- 201127978 1 : Sputtering chamber 4 1 : Target 42: Back plate 5: Magnet unit 5 2: Central magnet 5 3 : Peripheral Magnet 6 _·Moving means 7: Magnetic mask 3: Gas introduction means E: Sputtering power supply S: Substrate Μ1, Μ 2: Magnetic flux