WO2023169135A1

WO2023169135A1 - Ion generation device for straight tube square electromagnetic ion implantation equipment

Info

Publication number: WO2023169135A1
Application number: PCT/CN2023/075305
Authority: WO
Inventors: 王向红; 孟秋静; 戴正阳; 李云庆
Original assignee: 上海电子信息职业技术学院
Priority date: 2022-03-07
Filing date: 2023-02-10
Publication date: 2023-09-14

Abstract

An ion generation device for straight tube square electromagnetic ion implantation equipment, which belongs to the technical field of ion implantation. Said device comprises an ion sputtering housing (2) having a straight tube square-shaped cavity, one end of the straight tube square-shaped cavity being closed, and the other end of the straight tube square-shaped cavity being an ion outlet (5); two mounting surfaces (21) forming a certain included angle are arranged at the closed end of the ion sputtering housing (2); a set of cathode arc source assemblies (1) are arranged on each of the two mounting surfaces (21); an ion extraction assembly (4), a mass analysis device (6), and an acceleration pipe (7) are sequentially arranged at one side of the ion outlet (5); uncharged particles move at their own speed and direction and are deposited on an inner wall of the ion sputtering housing (2), and charged metal ions are focused and accelerated under the action of a magnetic field, and pass through the ion outlet (5). The rate of ionization is improved, and also the ion sputtering housing (2) having the straight tube square-shaped cavity is large in size, travel is short, and the rate of deposition is greatly improved.

Description

An ion generating device for straight square electromagnetic ion implantation equipment

Technical field

The utility model relates to the technical field of ion implantation, in particular to an ion generating device of a straight square electromagnetic ion implantation equipment.

Background technique

Ion implantation equipment is one of the high-voltage small accelerators with the largest number of applications. It obtains the required ions from an ion source and accelerates it to obtain an ion beam with an energy of several hundred kiloelectron volts. It is used for ion implantation of semiconductor materials, large-scale integrated circuits and devices, and is also used for surface modification and manufacturing of metal materials. membrane etc.

The metal ions generated by the metal ion source in existing ion implantation equipment are often accompanied by some impurity particles. At the same time, during the operation of the equipment, there are also air atoms that have not been eliminated and impurity particles that are not completely ionized. When the ions move at high speed in the pipeline, they It may collide with air atoms or impurity particles, resulting in charge exchange. The ions transfer the charge to the air atoms or impurity particles, and become electrically neutral. Neutral ions have no effect on doping, so neutral ions need to be avoided. To produce, it is necessary to increase the ionization rate of the metal ion source.

technical problem

The purpose of this utility model is to provide an ion generating device for a straight square electromagnetic ion implantation device in order to overcome the shortcomings and deficiencies of the prior art.

Technical solutions

The technical solution adopted by the utility model is as follows: an ion generating device of a straight-cylindrical square electromagnetic ion implantation equipment, which includes an ion sputtering shell with a straight-cylindrical square-shaped cavity. One end of the straight-cylindrical square-shaped cavity is closed and the other end is closed. One end is open to form an ion outlet. The ion sputtering shell is provided with two mounting surfaces forming a certain angle at the closed end. The two mounting surfaces are symmetrical to the center axis of the straight-cylindrical square cavity. The two mounting surfaces There is a set of cathode arc source components. The target surfaces of the metal targets in the cathode arc source components on the two mounting surfaces form an included angle greater than 0 and less than or equal to 135° and are set toward the ion outlet direction or formed parallel and Relative setting relationship;
One side of the ion outlet is provided with an ion extraction component, a mass analysis device and an accelerating tube in sequence.

The metal target surfaces of the cathode arc source assemblies respectively fixed on the two mounting surfaces form an included angle greater than 0 and less than or equal to 90°.

The ion sputtering housing is provided with two parallel mounting surfaces near the closed end, and the target surfaces of the metal targets in the cathode arc source assemblies respectively fixed on the two mounting surfaces form parallel and relatively opposite target surfaces. relation.

A rectangular coil is set on the outer wall of the ion sputtering shell, and the rectangular coil is used to form a magnetic field that focuses and accelerates positively charged particles.

The accelerating tube is composed of multiple groups of electrodes isolated by a medium, and the voltages on the electrodes are accumulated sequentially to accelerate ions.

The mass analysis device is a magnetic analyzer used to separate required ions from the mixed ion beam.

The ion extraction component is used to extract ions from the negative electrode to form an ion beam composed of positive ions.

beneficial effects

The beneficial effects of this utility model are as follows: the cathode arc source assembly in this utility model will produce metal ions and some particles, in which the metal ions will be focused and accelerated under the action of the magnetic field formed by the rectangular coil, and then pulled through the ion outlet by the ion extraction assembly. The uncharged particles move forward in the direction of their own speed and are deposited on the inner wall of the ion sputtering shell to improve the ionization efficiency; at the same time, the ion extraction component forms a positive ion beam, which is further screened out by the mass analysis device. The required ions are then accelerated and guided by the accelerating tube into the ion injection shell. In addition, the ion sputtering shell with a straight square cavity has a large volume and a short distance, so the deposition rate will be greatly increased.

Description of the drawings

In order to explain the embodiments of the present invention or the technical solutions in the prior art more clearly, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings in the following description These are only some embodiments of the present utility model. For those of ordinary skill in the art, other drawings obtained based on these drawings still fall within the scope of the present utility model without exerting any creative effort.

Figure 1 is a schematic structural diagram of Embodiment 1 of the present utility model (the ion implantation housing is omitted);
Figure 2 is a simple schematic diagram of Embodiment 2 of the present utility model;
Figure 3 is a simple schematic diagram of Embodiment 3 of the present utility model;
In the figure, 1-cathode arc source assembly, 2-ion sputtering housing, 21-mounting surface, 3-rectangular coil, 4-ion extraction assembly, 5-ion outlet, 6-mass analysis device, 7-acceleration tube.

Best Mode of Carrying Out the Invention

In order to make the purpose, technical solutions and advantages of the present utility model clearer, the utility model will be further described in detail below with reference to the accompanying drawings.

It should be noted that all expressions using "first" and "second" in the embodiments of the present invention are to distinguish two entities or parameters with the same name but not the same. It can be seen that "first" and "second" ” is only for the convenience of expression and should not be understood as a limitation on the embodiments of the present invention. This will not be explained one by one in the subsequent embodiments.

The direction and position terms mentioned in this utility model, such as "up", "down", "front", "back", "left", "right", "inside", "outside", "top", " "Bottom", "side", etc. are only for reference to the direction or position in the attached drawings. Therefore, the direction and position terms used are used to illustrate and understand the present invention, but are not intended to limit the scope of protection of the present invention.

As shown in Figure 1, it is Embodiment 1 of the present invention: an ion generating device of a straight-cylindrical square electromagnetic ion implantation equipment, which includes an ion sputtering housing 2 with a straight-cylindrical square-shaped cavity. One end of the cavity is closed and the other end is open to form an ion outlet 5. The ion sputtering shell 2 is provided with two mounting surfaces 21 forming a certain angle at the closed end. The two mounting surfaces 21 are centered in the straight-cylindrical square cavity. Axis symmetry, there is a set of cathode arc source assemblies 1 on the two mounting surfaces 21, and an angle of greater than 0 and less than or equal to 135° is formed between the target surfaces of the metal targets in the cathode arc source assemblies 1 on the two mounting surfaces. The included angle is set toward the direction of the ion outlet 5 or forms a parallel and relatively arranged relationship, so that the uncharged particles therein move forward along the direction of their own speed and are deposited on the inner wall of the ion sputtering shell 2 to enhance the ionization. Efficiency: One side of the ion outlet 5 is provided with an ion extraction assembly 4, a mass analysis device 6 and an accelerating tube 7 in sequence.

The metal target surfaces in the cathode arc source assembly 1 respectively fixed on the two mounting surfaces 21 form an included angle greater than 0 and less than or equal to 90°. In this embodiment, it is specifically set to 90°.

The cathode arc source assembly 1 includes a target, a target base for fixing the target, an arc starting device, and other necessary or non-essential parts of the cathode arc source. For specific structures, please refer to patents CN201210444314.1, CN201811360933.6, etc. Structural advantages of the cathode arc source structure.

After the cathode arc source assembly 1 is powered on, the arc spots generated by the arc ignition device are etched on the target surface to produce ions and particles. For example, if a metal target (such as chromium) is used, metal ions and particles are produced. Such particles follow the metal. The deposition of ions will adhere to the film, making the coating surface uneven. When working, the cathode arc source component 1 emits charged metal ions or uncharged particles. When emitted, the initial velocity direction is toward the direction directly in front of the target surface, and the charged metal ions are emitted. Under the action of the electric field, the moving direction of the ions shifts toward the direction of the ion outlet 5 until it leaves the ion outlet 5. The magnetic field formed by the rectangular coil 3 accelerates the charged metal ions to leave the ion outlet 5 and makes the charged metal ions relatively more concentrated. Uncharged particles are not affected by electric and magnetic fields and move forward along the direction of their initial velocity until they are deposited on the side wall of the ion sputtering shell 2. The ion sputtering shell with a straight-cylindrical square cavity has a large volume and a short distance. , the deposition rate will be greatly increased.

Furthermore, a rectangular coil 2 is set on the outer wall of the ion sputtering shell 1. The rectangular coil 2 is used to form a magnetic field that focuses and accelerates positively charged particles.

In this embodiment, the rectangular coil can be connected to an arbitrarily programmable linear coil current or a remotely adjustable rectangular wave coil current with a larger period and capable of linear regulation, which can be changed by controlling the current flowing through the coil. The strength and distribution of the magnetic field change the movement paths of electrons and ions.

Further, the accelerating tube 7 is composed of multiple groups of electrodes isolated by a medium. The voltages on the electrodes are accumulated sequentially to accelerate ions. When positive ions enter the accelerating tube 7, each electrode accelerates the ions, and the movement speed of the ions increases. It is the superposition of various levels of acceleration. The higher the total voltage, the faster the ions move, that is, the greater the kinetic energy, and finally the required ion injection energy is obtained.

Furthermore, most of the mass analysis devices 6 are magnetic analyzers. 60° or 90° sector magnets are commonly used in analyzers. The mass analyzer 6 of the ion implantation equipment can separate the required ions from the mixed ion beam. .

Further, the ion extraction component 51 uses a negatively biased suction electrode to suck the positively charged ions out of the plasma to form an ion beam.

In this embodiment, the mass analysis device 6 , the accelerating tube 7 and the ion extraction assembly 5 can all adopt conventional devices well known to those skilled in the art.

Figure 2 shows the second embodiment of the present utility model:
The structure of this embodiment is roughly the same as that of Embodiment 1. The biggest difference is the arrangement of the internal structure of the ion sputtering housing. The two mounting surfaces of this embodiment form an included angle of 60°. The target surfaces of the metal targets in the cathode arc source assembly 1 on the two mounting surfaces form an included angle of 60°. In this embodiment, a transition surface is provided between the two mounting surfaces to avoid insufficient space for the cathode arc source assembly 2. Install.

Figure 3 shows the third embodiment of the present utility model:
The structure of this embodiment is roughly the same as that of Embodiment 1. The biggest difference is the arrangement of the internal structure of the ion sputtering housing. The target surfaces of the metal targets in the cathode arc source assembly 1 on the two mounting surfaces are separated from each other. Arranged at a certain distance and parallel to each other, the generated uncharged particles are concentrated in the cavity between the target surfaces of the metal targets in the cathode arc source assembly 1 on the two mounting surfaces until they move to the target surface of the opposite metal target. , and the charged metal ions leave the cavity between the two metal target surfaces under the action of the electric field formed by the negative bias voltage, and are relatively concentrated and pulled away from the ion outlet 5 by the ion extraction component. As shown in Embodiment 1 As shown in the figure, a rectangular coil 3 is added to make the charged carbon ions leave faster and in a focused manner.

What is disclosed above is only the preferred embodiment of the present invention. Of course, it cannot be used to limit the scope of rights of the present utility model. Therefore, equivalent changes made according to the claims of the present utility model still fall within the scope of the present utility model.

Claims

An ion generating device of a straight-cylindrical square electromagnetic ion implantation equipment, characterized in that it includes an ion sputtering housing (2) with a straight-cylindrical square-shaped cavity, one end of which is closed and the other end is open. Ion outlet (5), the ion sputtering shell (2) is provided with two mounting surfaces (21) forming a certain angle at the closed end, and the two mounting surfaces (21) are symmetrical to the central axis of the straight-cylindrical square cavity. , there is a set of cathode arc source components (1) on the two mounting surfaces (21), and the target surface of the metal target material in the cathode arc source component (1) on the two mounting surfaces forms a gap greater than 0 and less than 0. Equivalent to an included angle of 135° and set toward the direction of the ion outlet (5) or forming a parallel and opposite relationship;

One side of the ion outlet (5) is provided with an ion extraction assembly (4), a mass analysis device (6) and an accelerating tube (7) in sequence.
An ion generating device for straight square electromagnetic ion implantation equipment according to claim 1, characterized in that the metal targets in the cathode arc source assembly (1) respectively fixed on the two mounting surfaces (21) The angle between the surfaces is greater than 0 and less than or equal to 90°.
An ion generating device for straight square electromagnetic ion implantation equipment according to claim 1, characterized in that the ion sputtering housing (2) is provided with two parallel mounting surfaces near the closed end, respectively. The target surfaces of the metal target materials in the cathode arc source assembly (2) fixed on the two mounting surfaces form a parallel and relatively arranged relationship.
An ion generating device for straight square electromagnetic ion implantation equipment according to claim 1, characterized in that a rectangular coil (3) is set on the outer wall of the ion sputtering housing (1), and the rectangular coil (3) 3) Used to form a magnetic field that focuses and accelerates positively charged particles.
An ion generating device for a straight-cylindrical square electromagnetic ion implantation equipment according to claim 1, characterized in that the accelerating tube (7) is composed of multiple groups of electrodes isolated by a medium, and the voltages on the electrodes are accumulated sequentially. to accelerate ions.
An ion generating device for a straight square electromagnetic ion implantation device according to claim 1, characterized in that the mass analysis device (6) is a magnetic analyzer used to separate required ions from the mixed ion beam. come out.
An ion generating device for a straight square electromagnetic ion implantation device according to claim 1, characterized in that the ion extraction component (4) is a negative electrode that extracts an ion beam composed of positive ions.