CN216947171U - Ion implantation equipment with magnetron sputtering subassembly - Google Patents

Abstract

The utility model provides an ion implantation device with a magnetron sputtering component, which belongs to the technical field of ion implantation and comprises a magnetron sputtering ion generation chamber shell provided with a reaction chamber, a metal target material and a sputtering power supply electrically connected with the metal target material, wherein the reaction chamber is internally provided with a sputtering area, one side of the reaction chamber is provided with an electron generation device, the other side of the reaction chamber is provided with two ion extraction components, the two metal target materials are fixed on the inner walls of the two sides of the magnetron sputtering ion generation chamber shell in the sputtering area and are oppositely arranged, the outer walls of the two sides of the magnetron sputtering ion generation chamber shell are provided with magnetron coils corresponding to the metal target material, one end of the reaction chamber, which is close to the ion extraction components, is sequentially provided with a mass analysis device, an accelerating tube and a process chamber, the process chamber is provided with a scanning disc, the utility model greatly reduces the particle number of an injection area through double screening, meanwhile, the injection speed is not influenced, and the structural layout is reasonable.

Description

Ion implantation equipment with magnetron sputtering subassembly

Technical Field

The utility model relates to the technical field of ion implantation, in particular to ion implantation equipment with a magnetron sputtering component.

Background

The ion implantation apparatus is one of high-voltage compact accelerators, and is used in the largest number. The ion source obtains the needed ions, and the ions are accelerated to obtain ion beam current with hundreds of kilo electron volt energy, which is used for ion implantation of semiconductor materials, large-scale integrated circuits and devices, and is also used for surface modification and film making of metal materials and the like.

The existing ion implantation equipment generally adopts an ion source to provide ions, the working principle of the ion implantation equipment is that electrons generated by a hot tungsten filament source are adopted to bombard impurity molecules or atoms under certain vacuum degree and low pressure, particles are ionized to generate positive ions, an external magnet applies a magnetic field to enable the electrons to rotate spirally, the ion acquisition quantity is improved, but generally the ion ionization cannot be thorough, some impurity particles usually exist, the ionization rate is low, the structure is complex, and the layout is unreasonable.

SUMMERY OF THE UTILITY MODEL

It is an object of the present invention to overcome the disadvantages and drawbacks of the prior art by providing an ion implantation apparatus having a magnetron sputtering assembly.

The technical scheme adopted by the utility model is as follows: an ion implantation device with a magnetron sputtering component comprises a magnetron sputtering ion generation cavity shell provided with a reaction cavity, two metal targets and a sputtering power supply electrically connected with the metal targets, wherein a sputtering area, a magnetic field guide area and an ion leading-out component are arranged in the reaction cavity;

the reaction chamber is provided with a mass analysis device, an accelerating tube and a process chamber in sequence at one end close to the ion leading-out component, the process chamber is provided with a scanning disc, electrons generated by the electron generation device collide with introduced gas to generate gas ions to bombard the metal target to generate metal target atoms and ions, the atoms can be further ionized under the collision of the electrons, the metal ions form ion beams through the ion leading-out component and enter the mass analysis device, and the ions are screened out through the mass analysis device and enter the process chamber after being accelerated by the accelerating tube.

Furthermore, two first coils which are oppositely arranged and used for forming a closed magnetic field are fixed on the inner wall and/or the outer wall of the shell of the magnetron sputtering ion generation chamber in the sputtering area; and a second coil for forming a magnetic field for accelerating ions to leave the reaction chamber is fixed on the inner wall and/or the outer wall of the shell of the magnetron sputtering ion generation chamber in the magnetic field guide area.

Furthermore, the electron generating device comprises a filament, an alternating current filament heating power supply and an air inlet pipe, the alternating current filament heating power supply is electrically connected with the filament and is used for providing electric energy to generate electrons, and the air inlet pipe is used for introducing gas and ionizing the electrons generated by the alternating current filament to generate gas ions with positive electricity.

Furthermore, the accelerating tube is composed of a plurality of groups of electrodes isolated by media, and voltages on the electrodes are sequentially accumulated and used for accelerating ions.

Further, the mass analysis device is a magnetic analyzer for separating desired ions from the mixed ion beam.

Further, the ion extraction assembly is used for sucking out the ion beam formed by the positive ions from the negative electrode.

The utility model has the following beneficial effects: the electron generated by the electron generating device collides with the introduced gas to generate gas ions to bombard the curved-surface target to generate metal target atoms and ions, the positively charged metal ions leave the sputtering region under the action of an electromagnetic field and enter the magnetic field guide region, the metal ions are guided to the mass analysis device by the ion leading-out assembly and then enter the process chamber through the accelerating tube, most uncharged particles are retained in the sputtering region and further collide with the gas ions to form the positively charged metal ions, and meanwhile, the mass analysis device also has the function of ion screening.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is within the scope of the present invention for those skilled in the art to obtain other drawings based on the drawings without inventive exercise.

FIG. 1 is a schematic structural view of the present invention;

FIG. 2 is a schematic structural diagram of an electron generating device according to the present invention;

FIG. 3 is a schematic illustration of the particle distribution of the present invention;

in the figure, 1-an electron generating device, 101-a filament, 102-an air inlet pipe, 2-a magnetron sputtering ion generating chamber shell, 3-a metal target, 4-an ion leading-out assembly, 5-a mass analysis device, 6-an accelerating tube, 7-a magnetron coil, 71-a first coil and 72-a second coil.

Detailed Description

To make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings.

It should be noted that all expressions using "first" and "second" in the embodiments of the present invention are used for distinguishing two entities with the same name but different names or different parameters, and it should be noted that "first" and "second" are merely for convenience of description and should not be construed as limitations of the embodiments of the present invention, and they are not described in any more detail in the following embodiments.

The terms of direction and position of the present invention, such as "up", "down", "front", "back", "left", "right", "inside", "outside", "top", "bottom", "side", etc., refer to the direction and position of the attached drawings. Accordingly, the use of directional and positional terms is intended to illustrate and understand the present invention and is not intended to limit the scope of the present invention.

As shown in fig. 1 to 2, in order to provide an embodiment of the present invention, an ion implantation apparatus with a magnetron sputtering assembly includes a magnetron sputtering ion generation chamber housing 2 provided with a reaction chamber, a metal target 3, and a sputtering power supply electrically connected to the metal target, a sputtering region 21, a magnetic field guide region, and an ion extraction assembly 4 are provided in the reaction chamber, an electron generation device 1 is provided on one opposite side of the ion extraction assembly 4, two metal targets 3 are provided, the metal targets 3 are fixed on inner walls of two sides of the magnetron sputtering ion generation chamber housing 2 in the sputtering region 21 and are arranged oppositely, magnetron coils 7 are provided on outer walls of two sides of the magnetron sputtering ion generation chamber housing 2 corresponding to the metal targets, a magnetic field for guiding ions sputtered from the metal targets 3 to leave the reaction chamber from the ion extraction assembly 4 is provided in the magnetic field guide region, wherein the two metal targets 3 which are oppositely arranged are arranged approximately in parallel and coaxially;

the reaction chamber is provided with a mass analysis device 5, an accelerating tube 6 and a process chamber in sequence at one end close to an ion leading-out component 4, the process chamber is provided with a scanning disc, electrons generated by an electron generation device 1 collide with introduced gas to generate gas ions to bombard a metal target 3 to generate metal target atoms and ions, the atoms can be further ionized under the collision of the electrons, the metal ions form ion beams through the ion leading-out component 4 and enter the mass analysis device 5, and the ions required by the mass analysis device 5 are screened out and enter the process chamber after being accelerated by the accelerating tube 6; compared with the prior art, the two metal target materials 3 are oppositely arranged, uncharged particles can be retained in a sputtering area and further collide with gas ions to form metal ions, meanwhile, the mass analysis device 5 also has the function of screening ions, the number of the particles in an injection area is greatly reduced through double screening, and the injection speed is not influenced.

Two first coils 71 which are oppositely arranged and used for forming a closed magnetic field are fixed on the inner wall and/or the outer wall of the magnetron sputtering ion generation chamber shell 2 of the sputtering area; a second coil 72 for forming a magnetic field for accelerating ions to leave the reaction chamber is fixed on the inner wall and/or the outer wall of the magnetron sputtering ion generation chamber shell 2 of the magnetic field guide area.

In this embodiment, the magnetron coil 7 is a rectangular coil and includes a first coil 71 and a second coil 72, wherein the rectangular coil may be connected with a linear coil current capable of being programmed at will or a rectangular wave coil current capable of being remotely adjusted, having a relatively large period and capable of realizing linear regulation, and the intensity and distribution of a magnetic field may be changed by controlling the current flowing through the coil, so as to change the movement path of electrons and ions.

Further, the electron generating device includes a filament 101, an ac filament heating power supply and an air inlet tube 102, the ac filament heating power supply is electrically connected to the filament 101 for providing electric energy to generate electrons, the air inlet tube 102 is used for introducing gas to ionize the electrons generated by the ac filament 101 to generate gas ions with positive charges, in this embodiment, Ar +.

Further, the accelerating tube 6 is composed of a plurality of groups of electrodes isolated by media, voltages on the electrodes are sequentially accumulated for accelerating ions, when positive ions enter the accelerating tube 6, each electrode accelerates the ions, the movement speed of the ions is the superposition of acceleration at all levels, the higher the total voltage is, the faster the movement speed of the ions is, namely, the higher the kinetic energy is, and finally the required ion implantation energy is obtained.

Further, the mass analyzer 5 of the ion implantation apparatus may be a magnetic analyzer, in which a 60 ° or 90 ° sector magnet is commonly used, and the hot electron bombardment of the impurity source gas molecules generates a plurality of ions, the dopant source gas forms a plurality of ions in the ion source, each ion has a different mass-to-charge ratio, and the motion trajectory of the ions is different when passing through the analyzing magnet of the mass analyzer 5, so that the mass analyzer 5 of the ion implantation apparatus may separate desired ions from the mixed ion beam.

Further, the ion extraction assembly 4 extracts positively charged ions from the plasma through a negatively biased anode to form an ion beam.

In this embodiment, the accelerating tube 6, the mass analysis device 5, the ion extraction assembly 4 and the process chamber may be any devices known to those skilled in the art.

The above disclosure is only for the purpose of illustrating the preferred embodiments of the present invention, and it is therefore to be understood that the utility model is not limited by the scope of the appended claims.

Claims (6)

1. An ion implantation device with a magnetron sputtering component is characterized by comprising a magnetron sputtering ion generation chamber shell (2) provided with a reaction chamber, a metal target material (3) and a sputtering power supply electrically connected with the metal target material, a sputtering area (21), a magnetic field guiding area and an ion extraction assembly (4) are arranged in the reaction chamber, an electron generating device (1) is arranged on one side opposite to the ion leading-out component (4), the number of the metal target materials (3) is two, the metal target materials (3) are fixed on the inner walls of the two sides of the magnetron sputtering ion generation cavity shell (2) in the sputtering area (21) and are arranged oppositely, the outer walls of the two sides of the magnetron sputtering ion generation cavity shell (2) are provided with magnetron coils (7) corresponding to the metal target, a magnetic field for guiding ions formed by sputtering the metal target (3) to leave the reaction chamber from the ion extraction assembly (4) is arranged in the magnetic field guide area;

one end of the reaction chamber, which is close to the ion extraction component (4), is sequentially provided with a mass analysis device (5), an accelerating tube (6) and a process chamber, and the process chamber is provided with a scanning disc.

2. The ion implantation apparatus with magnetron sputtering assembly according to claim 1, wherein two oppositely arranged first coils (71) for forming a closed magnetic field are fixed on the inner wall and/or outer wall of the magnetron sputtering ion generation chamber housing (2) of the sputtering zone; and a second coil (72) for forming a magnetic field for accelerating ions to leave the reaction chamber is fixed on the inner wall and/or the outer wall of the magnetron sputtering ion generation chamber shell (2) of the magnetic field guide area.

3. The ion implantation apparatus with magnetron sputtering component according to claim 1, wherein the electron generation device comprises a filament (101), an ac filament heating power supply and an inlet tube (102), the ac filament heating power supply is electrically connected with the filament (101) for providing electric energy to generate electrons, and the inlet tube (102) is used for introducing gas to ionize the electrons generated by the ac filament (101) to generate positively charged gas ions.

4. Ion implantation apparatus having a magnetron sputtering assembly according to claim 1, characterized in that the acceleration tube (6) consists of a plurality of sets of dielectrically isolated electrodes, the voltages on which are successively added for accelerating ions.

5. Ion implantation apparatus having a magnetron sputtering assembly as claimed in claim 1, wherein said mass analysis means (5) is a magnetic analyser for separating the desired ions from the mixed ion beam.

6. Ion implantation apparatus with magnetron sputtering assembly according to claim 1, characterized in that the ion extraction assembly (4) extracts for the negative pole an ion beam for forming positive ions.

Images