CN114752909A - Ion implantation method for improving ionization rate of ions - Google Patents
Ion implantation method for improving ionization rate of ions Download PDFInfo
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- CN114752909A CN114752909A CN202210215952.XA CN202210215952A CN114752909A CN 114752909 A CN114752909 A CN 114752909A CN 202210215952 A CN202210215952 A CN 202210215952A CN 114752909 A CN114752909 A CN 114752909A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
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Abstract
The invention provides an ion implantation method for improving the ionization rate of ions, which belongs to the technical field of ion implantation, wherein a cathode arc source component can generate metal ions and particles, wherein the metal ions are focused and accelerated under the action of a magnetic field formed by a rectangular coil, and then are drawn by an ion leading-out component to pass through an ion outlet, and uncharged particles in the metal ions move forwards along the speed direction of the uncharged particles and are deposited on the inner wall of an ion sputtering shell, so that the ionization efficiency is improved; meanwhile, an ion leading-out component forms a positive ion beam, required ions are further screened out through a mass analysis device, the ions are accelerated and led into a focusing system through an accelerating tube to be gathered into the ion beam with the diameter of several millimeters, and then the ions are implanted into a workpiece stored in a working target chamber through a deflection scanning system; in addition, the volume of the ion sputtering shell with the straight cylindrical square cavity is large, the path is short, and the deposition rate is greatly improved.
Description
Technical Field
The invention relates to the technical field of ion implantation, in particular to an ion implantation method for improving the ionization rate of ions.
Background
The ion implantation apparatus is one of high-voltage compact accelerators, and is used in the largest number. The ion source obtains the needed ions, and the ions are accelerated to obtain ion beam current with hundreds of kilo-electron volt energy, which is used for ion implantation of semiconductor materials, large-scale integrated circuits and devices, and is also used for surface modification and film making of metal materials, and the like.
The metal ions generated by a metal ion source in the existing ion implantation equipment often accompany with some impurity particles, meanwhile, air atoms which are not removed and impurity particles which are not completely ionized exist in the operation process of the equipment, when the ions move at high speed in a pipeline, the ions can collide with the air atoms or the impurity particles, so that charge exchange occurs, the ions transfer charges to the air atoms or the impurity particles and are electrically neutral, the neutral ions have no effect on doping, and therefore the generation of neutral ions needs to be avoided, namely, the ionization rate of the metal ion source needs to be improved.
Disclosure of Invention
The present invention is directed to overcoming the disadvantages and drawbacks of the prior art and providing an ion implantation method for increasing the ionization rate of ions.
The technical scheme adopted by the invention is as follows: an ion implantation method for improving ionization rate of ions adopts an ion implantation device which comprises an ion sputtering shell with a straight cylindrical square cavity, a mass analysis device, an accelerating tube, a focusing system, a deflection scanning system and a working target chamber with a vacuum cavity;
one end of the straight cylindrical square cavity is closed, the other end of the straight cylindrical square cavity is provided with an opening to form an ion outlet, an ion leading-out assembly is arranged at the ion outlet, two mounting surfaces forming a certain included angle are arranged at the closed end of the ion sputtering shell, the two mounting surfaces are symmetrical with the central axis of the straight cylindrical square cavity, a group of cathode arc source assemblies are arranged on the two mounting surfaces, an included angle larger than 0 and smaller than or equal to 135 degrees is formed between target surfaces of metal targets in the cathode arc source assemblies on the two mounting surfaces, and the two mounting surfaces are arranged towards the direction of the ion outlet (5) or form a parallel and opposite arrangement relation;
the ion sputtering device comprises an ion sputtering shell, a magnetic field generator and a control circuit, wherein a rectangular coil is sleeved on the outer wall of the ion sputtering shell and used for forming a magnetic field which has focusing and accelerating effects on positively charged particles;
a metal target is arranged in the cathode arc source component;
the ion sputtering shell is sequentially connected with a mass analysis device, an accelerating tube, a focusing system, a deflection scanning system and a working target chamber with a vacuum cavity through one side of an ion leading-out component;
the method comprises the following steps:
the method comprises the following steps: placing a workpiece to be processed in a working target chamber with a vacuum cavity;
step two: the cathode arc source component is electrified to generate metal positive ions and uncharged particles on the surface of the metal target material, and the generated metal positive ions and the uncharged particles enter the straight cylindrical square cavity at a certain initial speed;
step three: the rectangular coil is electrified to generate a magnetic field for deflecting, focusing and accelerating positively charged particles in the straight cylindrical square cavity, and the surface of the metal target generates metal positive ions, and the metal positive ions are deflected in motion tracks under the action of the magnetic field generated by the rectangular coil and are focused and accelerated to be guided to an ion outlet; meanwhile, the uncharged particles move forwards along the speed direction of the uncharged particles and are deposited on the inner wall of another metal target or an ion sputtering shell;
step four: the metal positive ions form positive ion beams through the ion leading-out component and enter the mass analysis device;
step five: the mass analysis device is used for guiding the ion beam to an accelerating tube after screening and purifying;
step six: the accelerating tube accelerates the ion beam to enable the ion beam to have certain ion energy, and then the ion beam is guided into the focusing system;
step seven: the focusing system collects the accelerated ions into ion beams with a certain diameter, and then the ion beams are guided to the deflection scanning system;
step eight: and carrying out uniform ion implantation on the workpiece to be processed stored in the working target chamber through the deflection scanning system.
And an included angle which is larger than 0 and smaller than or equal to 90 degrees is formed between the metal target surfaces in the cathode arc source components respectively fixed on the two mounting surfaces.
The ion sputtering shell is provided with two parallel mounting surfaces at one end close to the closed end, and the target surfaces of the metal target materials in the cathode arc source components respectively fixed on the two mounting surfaces form a parallel and opposite relationship.
The accelerating tube comprises a plurality of groups of electrodes isolated by media, and the voltages on the electrodes are accumulated in sequence to accelerate ions.
The mass analysis device is a magnetic analyzer, and the required ions are separated from the mixed ion beam according to different masses and charges of different ions and different deflection angles in a magnetic field.
The ion leading-out component is used for leading positive ions to form ion beams by negative electrode absorption.
The invention has the following beneficial effects: according to the invention, the cathode arc source component can generate metal ions and particles, wherein the metal ions are focused and accelerated under the action of a magnetic field formed by the rectangular coil, and then are drawn by the ion leading-out component to pass through the ion outlet, and uncharged particles in the metal ions move forwards along the speed direction of the ion leading-out component and are deposited on the inner wall of the ion sputtering shell, so that the ionization efficiency is improved; meanwhile, an ion leading-out component forms a positive ion beam, required ions are further screened out through a mass analysis device, then the ions are accelerated and led into a focusing system through an accelerating tube to be gathered into the ion beam with the diameter of several millimeters, and then the uniform ion implantation is carried out on a workpiece stored in a working target chamber through a deflection scanning system; in addition, the volume of the ion sputtering shell with the straight cylindrical square cavity is large, the path is short, and the deposition rate is greatly improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the prior art descriptions will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is within the scope of the present invention for those skilled in the art to obtain other drawings based on the drawings without inventive labor.
FIG. 1 is a flow chart of the method of the present invention;
FIG. 2 is a schematic diagram of a first embodiment of the present invention;
FIG. 3 is a schematic view of a second embodiment of the present invention;
FIG. 4 is a schematic view of a third embodiment of the present invention;
in the figure, 1-cathode arc source component, 2-ion sputtering shell, 21-installation surface, 3-rectangular coil, 4-ion extraction component, 5-ion outlet, 6-mass analysis device and 7-accelerating tube.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings.
It should be noted that all expressions using "first" and "second" in the embodiments of the present invention are used for distinguishing two entities with the same name but different names or different parameters, and it should be noted that "first" and "second" are merely for convenience of description and should not be construed as limitations of the embodiments of the present invention, which are not described in any more detail in the following embodiments.
The terms of direction and position of the present invention, such as "up", "down", "front", "back", "left", "right", "inside", "outside", "top", "bottom", "side", etc., refer to the direction and position of the attached drawings. Accordingly, the use of directional and positional terms is intended to illustrate and understand the present invention and is not intended to limit the scope of the present invention.
Example one
As shown in fig. 2: an ion implantation method for improving the ionization rate of ions adopts an ion implantation device which comprises an ion sputtering shell 2 with a straight cylindrical square cavity, a mass analysis device 6, an accelerating tube 7, a focusing system, a deflection scanning system and a working target chamber with a vacuum cavity;
one end of the straight cylindrical square cavity is closed, the other end of the straight cylindrical square cavity is provided with an opening to form an ion outlet 5, an ion leading-out assembly 4 is arranged at the ion outlet 5, two mounting surfaces 21 forming a certain included angle are arranged at the closed end of the ion sputtering shell 2, the two mounting surfaces 21 are symmetrical about the central axis of the straight cylindrical square cavity, a group of cathode arc source assemblies 1 are arranged on the two mounting surfaces 21, an included angle larger than 0 and smaller than or equal to 135 degrees is formed between the target surfaces of the metal target materials in the cathode arc source assemblies 1 on the two mounting surfaces, and the included angles are arranged towards the direction of the ion outlet 5 or are arranged in a parallel and opposite manner;
the ion sputtering device comprises an ion sputtering shell 1, wherein a rectangular coil 3 is sleeved on the outer wall of the ion sputtering shell 1, and the rectangular coil 3 is used for forming a magnetic field which has focusing and accelerating effects on positively charged particles;
a metal target is arranged in the cathode arc source component 1;
the ion sputtering shell 2 is sequentially connected with a mass analysis device 6, an accelerating tube 7, a focusing system, a deflection scanning system and a working target chamber with a vacuum cavity through one side of an ion leading-out component 4;
as shown in fig. 1, the method comprises the steps of:
the method comprises the following steps: placing a workpiece to be processed in a working target chamber with a vacuum cavity;
step two: the cathode arc source component 1 is electrified to generate metal positive ions and uncharged particles on the surface of the metal target material, and the generated metal positive ions and the uncharged particles enter the straight cylindrical square cavity at a certain initial speed;
step three: the rectangular coil 3 is electrified to generate a magnetic field which has the effects of deflecting, focusing and accelerating positively charged particles in the straight cylindrical square cavity, and metal positive ions generated on the surface of the metal target material deviate in motion track under the effect of the magnetic field generated by the rectangular coil 3 and are focused and accelerated to be guided to the ion outlet 5; meanwhile, the uncharged particles move forward along the speed direction of the uncharged particles and are deposited on the inner wall of the other metal target or ion sputtering shell 2;
step four: the metal positive ions form a positive ion beam through the ion extraction component 4 and enter the mass analysis device 6;
step five: the mass analysis device 6 is used for screening and purifying the ion beam and guiding the ion beam to the accelerating tube 7;
step six: the accelerating tube 7 accelerates the ion beam to enable the ion beam to have certain ion energy, and then the ion beam is guided into the focusing system;
step seven: the focusing system collects the accelerated ions into ion beams with a certain diameter, and then the ion beams are guided to the deflection scanning system;
step eight: and carrying out uniform ion implantation on the workpiece to be processed stored in the working target chamber through a deflection scanning system.
The metal target surfaces in the cathode arc source assembly 1 respectively fixed on the two mounting surfaces 21 form an included angle larger than 0 and smaller than or equal to 90 degrees, and in this embodiment, the included angle is specifically set to 90 degrees.
The cathode arc source assembly 1 includes a target, a target base for fixing the target, an arc striking device, and other necessary or unnecessary components of the cathode arc source, and the specific structure can be referred to the cathode arc source structures with different structural advantages such as CN201210444314.1, CN201811360933.6, etc.
When the cathode arc source assembly 1 is powered on, arc spots generated by the arc ignition device etch a target surface to generate ions and particles, for example, a metal target such as chromium is used to generate metal ions and particles, the particles can be attached to a film along with the deposition of the metal ions, so that the surface of the film is uneven, when the cathode arc source assembly 1 is in operation, charged metal ions or uncharged particles are emitted from the cathode arc source assembly 1, the initial velocity direction is a direction directly ahead of the target surface, the moving direction of the charged metal ions is deviated towards the direction of the ion outlet 5 under the action of an electric field until the charged metal ions leave from the ion outlet 5, the charged metal ions leave from the ion outlet 5 and are relatively more concentrated under the acceleration of the magnetic field formed by the rectangular coil 3, the uncharged particles are not influenced by the electric field and the magnetic field, move forward along the initial velocity direction until the uncharged particles are deposited on the side wall of the ion sputtering housing 2, the volume of the ion sputtering shell with the straight cylindrical square cavity is large, the path is short, and the deposition rate is greatly improved.
Further, the outer wall of the ion sputtering shell 1 is sleeved with a rectangular coil 2, and the rectangular coil 2 is used for forming a magnetic field which has focusing and accelerating effects on positively charged particles.
In this embodiment, the rectangular coil may be connected to a linear coil current capable of being programmed at will or a rectangular wave coil current capable of being remotely adjusted, having a relatively large period and capable of being linearly regulated, and the intensity and distribution of the magnetic field may be changed by controlling the current flowing through the coil, so as to change the movement path of electrons and ions.
Furthermore, the accelerating tube 7 is composed of a plurality of groups of electrodes isolated by media, voltages on the electrodes are accumulated in sequence, ions passing through the accelerating tube are accelerated by the electrodes, after positive ions enter the accelerating tube 7, the ions are accelerated by the electrodes, the movement speed of the ions is the superposition of acceleration at different levels, the higher the total voltage is, the faster the movement speed of the ions is, namely, the higher the kinetic energy is, and finally the required ion implantation energy is obtained.
Further, the mass analyzer 6 is mostly a magnetic analyzer, in which a 60 ° or 90 ° sector magnet is commonly used, and the mass analyzer 6 of the ion implantation apparatus has different masses and different charges according to different ions, and can separate the desired ions from the mixed ion beam by deflecting at different angles in the magnetic field.
Further, the ion extraction assembly 51 extracts positively charged ions from the plasma through a negatively biased anode to form an ion beam.
In this embodiment, the mass analysis device 6, the acceleration tube 7, the ion extraction assembly 5, the focusing system, the deflection scanning system and the working target chamber may be conventional devices known to those skilled in the art.
Example two
As shown in fig. 3:
the method of this embodiment is the same as the first embodiment, and the structure of the ion implantation apparatus used in the method is also substantially the same, where the largest difference is that the arrangement of the internal structure of the ion sputtering housing is different, an included angle of 60 ° is formed between the two mounting surfaces of this embodiment, an included angle of 60 ° is formed between the target surfaces of the metal targets in the cathode arc source assembly 1 on the two mounting surfaces of this embodiment, and a transition surface is provided between the two mounting surfaces of this embodiment, so as to avoid insufficient space for mounting the cathode arc source assembly 2.
EXAMPLE III
As shown in fig. 4:
the method of this embodiment is the same as the first embodiment, and the structure of the ion implantation apparatus used in the method is also substantially the same, wherein the largest difference is that the arrangement of the internal structure of the ion sputtering housing is different, the target surfaces of the metal targets in the cathode arc source assemblies 1 on the two mounting surfaces are arranged in parallel with a certain distance, the generated uncharged particles are concentrated in the cavity between the target surfaces of the metal targets in the cathode arc source assemblies 1 on the two mounting surfaces until moving to the target surface of the opposite metal target, and the charged metal ions leave the cavity between the two metal target surfaces under the action of the electric field formed by the negative bias voltage, and are relatively and intensively pulled away from the ion outlet 5 by the ion extraction assembly, and as shown in the first embodiment, the rectangular coil 3 can be additionally provided, so that the charged carbon ions can leave at a faster speed and focus.
The above disclosure is only for the purpose of illustrating the preferred embodiments of the present invention, and it is therefore to be understood that the invention is not limited by the scope of the appended claims.
Claims (6)
1. An ion implantation method for improving the ionization rate of ions is characterized in that an adopted ion implantation device comprises an ion sputtering shell (2) with a straight cylindrical square cavity, a mass analysis device (6), an accelerating tube (7), a focusing system, a deflection scanning system and a working target chamber with a vacuum cavity;
one end of the straight-cylinder square cavity is closed, the other end of the straight-cylinder square cavity is provided with an opening to form an ion outlet (5), an ion leading-out assembly (4) is arranged at the ion outlet (5), two mounting surfaces (21) forming a certain included angle are arranged at the closed end of the ion sputtering shell (2), the two mounting surfaces (21) are symmetrical with the central axis of the straight-cylinder square cavity, a group of cathode arc source assemblies (1) are arranged on the two mounting surfaces (21), an included angle larger than 0 and smaller than or equal to 135 degrees is formed between target surfaces of metal targets in the cathode arc source assemblies (1) on the two mounting surfaces, and the included angles are arranged towards the direction of the ion outlet (5) or form a parallel and opposite arrangement relation;
the ion sputtering device is characterized in that a rectangular coil (3) is sleeved on the outer wall of the ion sputtering shell (1), and the rectangular coil (3) is used for forming a magnetic field for deflecting, focusing and accelerating positively charged particles;
a metal target is arranged in the cathode arc source component (1);
the ion sputtering shell (2) is sequentially connected with a mass analysis device (6), an accelerating tube (7), a focusing system, a deflection scanning system and a working target chamber with a vacuum cavity through one side of an ion leading-out component (4);
the method comprises the following steps:
the method comprises the following steps: placing a workpiece to be processed in a working target chamber with a vacuum cavity;
step two: the cathode arc source component (1) is electrified to generate metal positive ions and uncharged particles on the surface of the metal target material, and the generated metal positive ions and the uncharged particles enter the straight cylindrical square cavity at a certain initial speed;
step three: the rectangular coil (3) is electrified to generate a magnetic field for deflecting, focusing and accelerating positively charged particles in the straight cylindrical square cavity, and the motion track of metal positive ions generated on the surface of the metal target material is deviated and focused and accelerated under the action of the magnetic field generated by the rectangular coil (3) and is guided to the ion outlet (5); meanwhile, the uncharged particles move forward along the speed direction of the uncharged particles and are deposited on the inner wall of another metal target or an ion sputtering shell (2);
step four: the metal positive ions form positive ion beams through the ion extraction component (4) and enter the mass analysis device (6);
step five: the mass analysis device (6) is used for screening and purifying the ion beam and guiding the ion beam to the accelerating tube (7);
step six: the accelerating tube (7) accelerates the ion beam to enable the ion beam to have certain ion energy and then guides the ion beam into the focusing system;
step seven: the focusing system collects the accelerated ions into ion beams with a certain diameter, and then the ion beams are guided to the deflection scanning system;
step eight: and carrying out uniform ion implantation on the workpiece to be processed stored in the working target chamber through the deflection scanning system.
2. The method according to claim 1, wherein the metal target surfaces of the cathode arc source components (1) respectively fixed on the two mounting surfaces (21) form an included angle of more than 0 and 90 degrees or less.
3. The method according to claim 1, wherein the ion sputtering housing (2) has two parallel mounting surfaces near the closed end, and the target surfaces of the metal target in the cathode arc source assembly (2) respectively fixed to the two mounting surfaces are in parallel and opposite relationship.
4. The method according to claim 1, wherein the accelerating tube (7) comprises a plurality of groups of electrodes separated by a medium, and voltages on the electrodes are sequentially added to accelerate ions.
5. The method according to claim 1, wherein the mass analyzer (6) is a magnetic analyzer, and the desired ions are separated from the mixed ion beam according to different mass and charge of different ions and different deflection angles in the magnetic field.
6. The ion implantation method for increasing the ionization rate of ions according to claim 1, wherein the ion extraction assembly (4) extracts positive ions for forming an ion beam for a negative electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210215952.XA CN114752909A (en) | 2022-03-07 | 2022-03-07 | Ion implantation method for improving ionization rate of ions |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210215952.XA CN114752909A (en) | 2022-03-07 | 2022-03-07 | Ion implantation method for improving ionization rate of ions |
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| CN114752909A true CN114752909A (en) | 2022-07-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202210215952.XA Withdrawn CN114752909A (en) | 2022-03-07 | 2022-03-07 | Ion implantation method for improving ionization rate of ions |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115637414A (en) * | 2022-10-31 | 2023-01-24 | 江苏省特种设备安全监督检验研究院 | Ultrasonic-assisted ion implantation device and processing method |
| WO2023169135A1 (en) * | 2022-03-07 | 2023-09-14 | 上海电子信息职业技术学院 | Ion generation device for straight tube square electromagnetic ion implantation equipment |
-
2022
- 2022-03-07 CN CN202210215952.XA patent/CN114752909A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023169135A1 (en) * | 2022-03-07 | 2023-09-14 | 上海电子信息职业技术学院 | Ion generation device for straight tube square electromagnetic ion implantation equipment |
| CN115637414A (en) * | 2022-10-31 | 2023-01-24 | 江苏省特种设备安全监督检验研究院 | Ultrasonic-assisted ion implantation device and processing method |
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