CN1087128A - Microwave plasma source ion implantation apparatus - Google Patents
Microwave plasma source ion implantation apparatus Download PDFInfo
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- CN1087128A CN1087128A CN 92111983 CN92111983A CN1087128A CN 1087128 A CN1087128 A CN 1087128A CN 92111983 CN92111983 CN 92111983 CN 92111983 A CN92111983 A CN 92111983A CN 1087128 A CN1087128 A CN 1087128A
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- microwave plasma
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- sputtering
- ion implantation
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Abstract
Microwave plasma source ion implantation apparatus is a kind of equipment that is used for Surface Modification of Ion Implanted.It is made up of target chamber [1], vacuum system [2], airing system [3] and one or more groups operation source [4,5,6,7].Every group of operation source comprise one or more microwave plasma sources [4] and (or) one or more material sputtering sources [5,6,7], microwave plasma source is with horizontal magnetic bottle electron cyclotron microwave plasma source; The material sputtering source can be used controlled sputtering source [5], microwave plasma sputtering source [6] or vacuum arc device [7].At working vacuum degree 10
-2-10
-3During Pa, connect direct current, interchange or pulsed high voltage generator [8,14,15] on the workpiece, that device can carry out is ion implantation, ionic fluid dynamically mixes, and forms good supercoat at workpiece surface.
Description
The present invention is a kind of equipment that is used for Surface Modification of Ion Implanted, is specially adapted to metal surface properties modification.
At Japan P43-50 " function material " in April, 1988, a kind of electron beam gun evaporating materials deposit film on substrate of using has been described in the article of thread Fang Jie, carry out ionic fluid with gaseous ion irradiation substrate simultaneously and dynamically mix the device that generates protective coating.The shortcoming of this device is the restriction that is subjected to sight line processing, the surface working that can only see an ionic fluid.
Having described a kind of device in 1988 in the United States Patent (USP) 4,764,394, is operating air pressure 10 in vacuum chamber
-2During Pa, produce plasma body with the hot filament ejected electron, workpiece is immersed in the plasma body, on workpiece, add the negative pulse high pressure, by attracting the positive ion bombardment workpiece in the plasma sheath that forms around the workpiece and being injected into workpiece surface, improve the workpiece surface performance.Though this device has overcome the restriction of " sight line processing ", can not produce gaseous ion and metal ion simultaneously and inject and thin film deposition, promptly can not carry out the dynamic hybrid process of ionic fluid.
In addition, when producing plasma body with the hot filament emitting electrons, can not long term operation in the reactant gases environment, filament material also can bring pollution.
In order to overcome the defective that prior art exists, the present invention proposes a kind of simple in structure, long working life, pollution little, at the ion implantation apparatus of condition of high vacuum degree work.
The invention allows for and to carry out gaseous ion and metal ion injects simultaneously or carry out the ion implantation and dynamic combination treatment device of ionic fluid thin film deposition simultaneously.
The object of the present invention is achieved like this: device is provided with at least one group of operation source, and every group of operation source comprises at least one microwave plasma source, operation source with the workpiece be central distribution around it, be connected to high-voltage power supply on the workpiece.
For realizing purpose of the present invention, the operation source of device can also comprise at least one material sputtering source.The material sputtering source is connected to shielding power supply.
The quantity of operation source is typically chosen in 20 groups, specifically can be according to the size of workpiece, and surface property requirement and deposition are selected the quantity of operation source, and be big as workpiece, requires the deposition height, and the quantity of operation source can be some more.
Device is 10 with the microwave plasma source in one or more groups operation source at working vacuum
-2-10
-3Produce plasma body during Pa, and be transported near sputtering target sheet or the workpiece, attract the ion in the microwave plasma under the shielding power supply effect of material sputtering source, to produce sputter, simultaneously workpiece is added high-voltage power supply, because the material particle that sputters is become the lewis' acid ion by the plasma body ionization, therefore at this moment except having gaseous ion produces, also producing has metal ion.This while is by the gaseous ion of microwave plasma source and the generation of material sputtering source and the effect of metal ion mixing injection or the dynamic combination treatment of ionic fluid; workpiece surface is carried out the comprehensive ion implantation or dynamic combination treatment of ionic fluid, can reach the effect that forms the high supercoat of adhesion strength at workpiece surface.
Fig. 1 is the structural representation that device has one group of operation source;
Fig. 2 is that operation source is the structural representation of microwave plasma sputtering source;
Fig. 3 is the structural representation that device has 6 groups of operation source.
Below in conjunction with accompanying drawing in detail the present invention is described in detail:
Express the present invention includes target chamber [1] among Fig. 1, Fig. 2 and Fig. 3, be connected with vacuum system [2], air supply system [3] with target chamber, vacuum system can make and reach base vacuum 10 in the target chamber-3-10
-7Pa; Working vacuum 10-2-10
-3Pa. Air supply system can be sent into sputter gas in the target chamber by microwave plasma source [4], be placed on the workpiece [16] in the target chamber and be connected to high voltage source [8,14,15], high voltage source can be used AC power [8] or dc source [14] or the pulse power [15] as required. The employing AC power is better, and its advantage is to eliminate the charge accumulated of surface of the work, with the damage that prevents that high-voltage breakdown from causing, and low price, easy to use.
The present invention is equipped with the operation source [4,5,6,7] that 1 group or many groups are carried out the dynamic mixed processing of ion beam at target chamber [1], every group of operation source include one or more microwave plasma sources [4] and (or) one or more material sputtering sources [5,6,7]. Microwave plasma source [4] preferably adopts horizontal magnetic bottle electron cyclotron microwave plasma source (No. 90105790.8 Chinese patents of inventor's application). The material sputtering source can adopt following several device:
1. controlled sputtering source [5]. Magnetic control sputtering cathode is made with permanent magnet, and Surface field＞1000 Gausses is contained on the target sheet [10] on the sputter cathode and is connected to shielding power supply [12], can use 0-4KV Dc source or high frequency electric source.
2. microwave plasma sputtering source [6]. It by microwave plasma source [4], be located at the sputter passage [9] on the target chamber [1] and be located at target chamber and passage between metering hole sheet [13] form, as shown in Figure 2. The sputter passage is made with quartz glass, and the metering hole sheet can be made with quartz glass or sputter material, to reduce the pollution of sputter material article on plasma body source. Sputtering target [11] is placed in the sputter passage, generally adopts the bigger geometry of area, can obtain bigger deposition, such as drum type brake or square tube formula, and diameter and highly adjustable. The target sheet connects dc source or the high frequency electric source of 0-4KV and makes shielding power supply [12].
3. vacuum arc device [7]. Available cathode arc or anode arc device, the cathode arc source of the DHD-600F type multi-Arc Ion Plating of producing such as Beijing instrument plant.
More than three kinds of material sputtering sources can combine with microwave plasma source and produce gaseous ion and metal ion mixes the effect of injecting or gaseous ion injects and the effect of thin film deposition.Particularly the ionization level of vacuum arc device can reach 70-90%, can produce a large amount of metal ions and be injected into workpiece surface and improve the workpiece surface performance.
Embodiment one:
Establish one or with a microwave plasma source [4] on the vacuum chamber [1], connect ac high voltage source [8] on metal or the semiconductor material workpiece [16] during work, voltage is 30-100KV, and electric current is 5-100mA, and power is 10KW.It is ion-implanted surface-modified on device metal works etc. to be carried out nitrogen; Ion implantation B of semiconductor workpiece or P etc. are carried out semi-conductor ooze the assorted shallow junction that forms.
Embodiment two:
As shown in Figure 1, adorn one group of operation source on the vacuum system [1].It comprises 1 microwave plasma source [4] or microwave plasma sputtering source [6] and 4 controlled sputtering sources [5].Microwave plasma source is used to produce plasma body and cleans the irradiation workpiece.Add DC high-voltage power supply [14] on the workpiece [16], the sputter cathode of 4 controlled sputtering sources is distributed in around the workpiece, and the sputtering target [10] that is contained on the sputter cathode connects shielding power supply [12].The Distribution of Magnetic Field of sputter cathode constitutes quadripolar magnetic field, and the article on plasma body plays effect of contraction, improves the plasma density of workspace.This device can carry out the material surface supercoat to be handled.
Embodiment three:
As shown in Figure 2, adorn one group of operation source on the target chamber [1], it comprises 5 microwave plasma sputtering sources [4].Sputtering target [11] is a drum type brake, and target can be used Ti, Al, Si etc.Biasing shielding power supply [12] on the target is that 0-4KV is adjustable with voltage, and electric current is direct current or the high frequency electric source of 0-150mA.From 5 microwave plasma sources simultaneously or import reactant gases or sputter gas in turn, as H
2SiH
4, CH
4, N
2Or O
2By the time in the target chamber, can carry out thin film deposition and generate Si at workpiece surface
3N
4, SiO
2, multilayer film such as a-Si:H-a-c:H.
In operation source work, making alive is 0-100KV on the workpiece, and the pulse power of power 10KW [15] can carry out the dynamic combination treatment of ion implantation and ion beam to workpiece surface, forms TiN, TiC, Al on the metal works surface
2O
3Etc. coating.
Embodiment four:
As shown in Figure 3, adorn 6 groups of operation source on the vacuum chamber [1], every group comprises a microwave plasma source [4] and a cathode arc source [7], and operation source work the time adds high pressure gaseous ion that AC power [8] produces by microwave plasma source (as N on workpiece
2) and be injected into the metal works surface simultaneously by the metal ion (as Ti, Al) that cathode arc source produces and carry out ionic fluid and dynamically mix, form the TiN superhard coating, can reach vickers hardness hv 2500.
Claims (5)
1, microwave plasma ion implantation apparatus, include target chamber [1], vacuum system [2], airing system [3] is characterized in that having at least one group of operation source [4], [5], [6], [7], every group of operation source has a microwave plasma source [4] at least, operation source is that central distribution is around it with workpiece [16], be connected to high-voltage power supply [8] on the workpiece, [14], [15].
2, device as claimed in claim 1 is characterized in that every group of operation source has a material sputtering source [5], [6], [7] at least.
3, device as claimed in claim 2 is characterized in that said material sputtering source is controlled sputtering source [5] or microwave plasma sputtering source [6] or vacuum arc device [7].
4, device as claimed in claim 1 is characterized in that the high-voltage power supply that connects on the workpiece is AC power [8].
5, device as claimed in claim 3 is characterized in that said vacuum arc device [7] is the vacuum cathode arcing device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 92111983 CN1087128A (en) | 1992-11-16 | 1992-11-16 | Microwave plasma source ion implantation apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 92111983 CN1087128A (en) | 1992-11-16 | 1992-11-16 | Microwave plasma source ion implantation apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1087128A true CN1087128A (en) | 1994-05-25 |
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ID=4945676
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 92111983 Pending CN1087128A (en) | 1992-11-16 | 1992-11-16 | Microwave plasma source ion implantation apparatus |
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|---|---|
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100395371C (en) * | 2005-12-02 | 2008-06-18 | 太原理工大学 | Apparatus for reinforcing arc-glow percolation plated ceating by microwave plasma and process thereof |
| CN1868941B (en) * | 2005-05-25 | 2010-07-14 | 奥林巴斯株式会社 | Optical element forming mould and its manufacturing method and device |
| CN101798676A (en) * | 2009-02-09 | 2010-08-11 | 复旦大学 | Microwave ECR plasma-aid magnetron sputtering deposition device |
| CN102041481A (en) * | 2009-09-18 | 2011-05-04 | 罗门哈斯电子材料有限公司 | Method of making durable articles |
| CN101713065B (en) * | 2009-12-13 | 2012-03-21 | 大连理工大学 | Device for microwave plasma based low-energy ion implantation on internal surface of metal round pipe with small pipe diameter |
| CN112689376A (en) * | 2021-03-15 | 2021-04-20 | 四川大学 | Microwave plasma jet excitation device adopting piezoelectric material |
| WO2023169135A1 (en) * | 2022-03-07 | 2023-09-14 | 上海电子信息职业技术学院 | Ion generation device for straight tube square electromagnetic ion implantation equipment |
-
1992
- 1992-11-16 CN CN 92111983 patent/CN1087128A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1868941B (en) * | 2005-05-25 | 2010-07-14 | 奥林巴斯株式会社 | Optical element forming mould and its manufacturing method and device |
| CN100395371C (en) * | 2005-12-02 | 2008-06-18 | 太原理工大学 | Apparatus for reinforcing arc-glow percolation plated ceating by microwave plasma and process thereof |
| CN101798676A (en) * | 2009-02-09 | 2010-08-11 | 复旦大学 | Microwave ECR plasma-aid magnetron sputtering deposition device |
| CN101798676B (en) * | 2009-02-09 | 2014-06-11 | 复旦大学 | Microwave ECR plasma-aid magnetron sputtering deposition device |
| CN102041481A (en) * | 2009-09-18 | 2011-05-04 | 罗门哈斯电子材料有限公司 | Method of making durable articles |
| CN101713065B (en) * | 2009-12-13 | 2012-03-21 | 大连理工大学 | Device for microwave plasma based low-energy ion implantation on internal surface of metal round pipe with small pipe diameter |
| CN112689376A (en) * | 2021-03-15 | 2021-04-20 | 四川大学 | Microwave plasma jet excitation device adopting piezoelectric material |
| CN112689376B (en) * | 2021-03-15 | 2021-06-18 | 四川大学 | Microwave plasma jet excitation device adopting piezoelectric material |
| WO2023169135A1 (en) * | 2022-03-07 | 2023-09-14 | 上海电子信息职业技术学院 | Ion generation device for straight tube square electromagnetic ion implantation equipment |
| GB2628519A (en) * | 2022-03-07 | 2024-09-25 | Shanghai Technical Inst Electronics & Information | Ion generation device for straight tube square electromagnetic ion implantation equipment |
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| C01 | Deemed withdrawal of patent application (patent law 1993) | ||
| WD01 | Invention patent application deemed withdrawn after publication |