CN112689376A - Microwave plasma jet excitation device adopting piezoelectric material - Google Patents

Microwave plasma jet excitation device adopting piezoelectric material Download PDF

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CN112689376A
CN112689376A CN202110277454.3A CN202110277454A CN112689376A CN 112689376 A CN112689376 A CN 112689376A CN 202110277454 A CN202110277454 A CN 202110277454A CN 112689376 A CN112689376 A CN 112689376A
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piezoelectric material
substrate structure
gap
microwave signal
microwave
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CN112689376B (en
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张益�
黄卡玛
杨阳
朱铧丞
王策
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Sichuan University
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Sichuan University
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Abstract

本申请提供一种采用压电材料的微波等离子体射流激发装置。旨在实现小功率微波信号激发气体为等离子体、实现激发不同气体为等离子体,以及使激发产生的等离子体性能更好。包括:壳体、基板结构、压电材料、连接头、壳体上开设有进气口和出气口;基板结构和压电材料之间具有间隙,进气口中进入的气体充斥在间隙中;连接头与基板结构连接,连接头用于将微波信号输入到基板结构,以使微波信号沿着基板结构的信号线进入到壳体内;基板结构和压电材料末端之间间隙的大小随着压电材料上的电压而变化,以改变微波信号在所述间隙中形成的电场强度;充斥在间隙中的气体在微波信号形成的电场的作用下被激发为常压等离子体,常压等离子体由出气口输出。

Figure 202110277454

The present application provides a microwave plasma jet excitation device using piezoelectric materials. The purpose is to realize the excitation of gas into plasma by low-power microwave signal, to realize the excitation of different gases into plasma, and to make the plasma generated by excitation have better performance. It includes: the shell, the substrate structure, the piezoelectric material, the connector, and the shell with an air inlet and an air outlet; there is a gap between the substrate structure and the piezoelectric material, and the gas entering the air inlet is filled in the gap; the connection The head is connected to the substrate structure, and the connector is used to input the microwave signal to the substrate structure, so that the microwave signal enters the casing along the signal line of the substrate structure; the size of the gap between the substrate structure and the end of the piezoelectric material varies with the piezoelectric The voltage on the material changes to change the intensity of the electric field formed by the microwave signal in the gap; the gas filled in the gap is excited into atmospheric plasma under the action of the electric field formed by the microwave signal. Air port output.

Figure 202110277454

Description

Microwave plasma jet excitation device adopting piezoelectric material
Technical Field
The invention relates to the technical field of microwave plasma jet excitation, in particular to a microwave plasma jet excitation device adopting a piezoelectric material.
Background
With the rapid development of electronic technology, microwave normal-pressure plasma is widely applied to the fields of material surface modification treatment, biological medical treatment, food preservation, film coating, environmental protection and the like, and has the advantages of no need of external vacuum equipment, low gas temperature, high electron density, abundant active particles, no pollution to the surrounding environment, high system energy utilization rate, long service life and the like.
Common microwave plasma excitation devices are mostly coaxial-line-based plasma excitation devices, substrate-structure-based excitation devices, and the like. However, the structure of these exciting devices is generally fixed, dynamic adjustment cannot be performed after plasma excitation, and the power required for excitation is large due to the processing accuracy, the thickness of the gas pipe, and the like.
Disclosure of Invention
In view of the above, the present invention provides a microwave plasma jet excitation device using a piezoelectric material, which aims to reduce the power of a microwave signal required for exciting a plasma, and simultaneously, by changing the voltage applied to a piezoelectric material electrode in the device, realize dynamic adjustment of a gap between the piezoelectric material and a substrate structure, so that the electric field intensity formed by the microwave signal between the piezoelectric material and the substrate structure is changed, and further realize that a low-power microwave signal excites different gases into a plasma.
In addition, research has shown that pulsed plasmas generally have higher electron density and electron temperature than continuous wave plasmas at equivalent power; in the microwave plasma structure of the present application, the end of the piezoelectric sheet may vibrate by applying a pulse or an ac bias voltage with a specific frequency to the piezoelectric material, so as to achieve an effect similar to that of a pulse plasma, i.e., to excite a plasma with a higher electron density or electron temperature at the same power.
The embodiment of the application provides an adopt piezoelectric material's microwave plasma efflux excitation device, the device includes: the piezoelectric ceramic antenna comprises a shell and a substrate structure positioned in the shell, wherein the substrate structure comprises a substrate layer, a signal wire, a piezoelectric material positioned in the shell and a connector positioned outside the shell from top to bottom, and the shell is provided with an air inlet and an air outlet;
wherein a gap is arranged between the substrate structure and the piezoelectric material, and the gas entering from the gas inlet is filled in the gap;
the connector is connected with the substrate structure and used for inputting microwave signals to the substrate structure so that the microwave signals enter the shell along the signal line of the substrate structure;
wherein a size of a gap between the substrate structure and a distal end of the piezoelectric material varies with a voltage across the piezoelectric material to vary an electric field intensity of the microwave signal formed in the gap;
and the gas filled in the gap is excited into normal pressure plasma under the action of an electric field formed by the microwave signal, and the normal pressure plasma is output from the gas outlet.
Optionally, the substrate structure and the metal layer on the upper surface of the piezoelectric material, and the air filled between the substrate structure and the metal layer on the upper surface of the piezoelectric material form a microwave signal transmission line structure.
Optionally, the housing includes a first cavity and a cone-like cavity connected to the first cavity, a tip of the cone-like cavity is provided with the air inlet, and a tail end of the first cavity is provided with the air outlet.
Optionally, the apparatus further comprises: and the upper side and the lower side of the supporting block are respectively connected with the substrate structure and the piezoelectric material so as to separate the substrate structure and the piezoelectric material to form a gap.
Optionally, the electrode end of the piezoelectric material is located at a position close to one side of the air inlet.
Optionally, the support block is located proximate to the electrode end of the piezoelectric material.
Optionally, the piezoelectric material is configured to decrease a gap between the end of the substrate structure and the end of the piezoelectric material with an increase in voltage when the piezoelectric material is switched on, so that an electric field intensity formed in the gap by the microwave signal increases with the increase in voltage.
Optionally, the piezoelectric material is switched on by an alternating voltage, and the end of the piezoelectric material vibrates with the change of the alternating voltage so as to make the size of the gap alternately decrease and increase;
wherein the electric field intensity formed by the microwave signal in the gaps with alternating sizes is reduced along with the increase of the gaps and is increased along with the reduction of the gaps.
The embodiment of the application has the following advantages:
according to the microwave plasma jet excitation device adopting the piezoelectric material, the processing cost is low, meanwhile, through introducing the piezoelectric material, a gap is formed between the piezoelectric material and the substrate structure, the tail end of the piezoelectric material can be bent along with different voltages after the piezoelectric material is powered on, the gap between the tail end of the piezoelectric material and the tail end of the substrate structure is changed by changing the voltage applied to the piezoelectric material, through increasing the voltage applied to the piezoelectric material, the gap between the tail end of the piezoelectric material and the tail end of the substrate structure is reduced, an electric field formed between the gaps is increased, and a low-power microwave signal can excite gas into normal-pressure plasma. Meanwhile, by changing the gap between the end of the piezoelectric material and the end of the substrate structure, different gas molecules can be excited into atmospheric pressure plasma. Because the required excitation field intensity is different along with the different excited gas molecules, the field intensity is changed by changing the size of the gap, and the different gas molecules are excited into the normal-pressure plasma.
In a third aspect, the ends of the piezoelectric material are vibrated by applying an alternating voltage across the piezoelectric material to alternately decrease and increase the size of the gap between the ends of the piezoelectric material and the ends of the substrate structure, thereby improving the performance of the atmospheric pressure plasma excited in the gap alternately decreasing and increasing in size.
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In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the description of the embodiments of the present application will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without inventive exercise.
Fig. 1 is a schematic diagram of a microwave plasma jet excitation device using a piezoelectric material according to an embodiment of the present application.
Description of reference numerals:
11-a housing; 12-a base layer; 13-a signal line; 14-a piezoelectric material; 15-a connector; 16-support block.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some, but not all, embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Before describing the microwave plasma jet excitation device using piezoelectric material provided in the present application, a brief description of the microwave plasma jet excitation device in the related art will be given below. In the prior art, common microwave plasma excitation devices are mainly coaxial plasma excitation devices, excitation devices based on substrate structures, and the like. However, the structure of these excitation devices is generally fixed, and cannot be dynamically adjusted after the plasma is excited, and the power required for excitation is slightly large due to the processing accuracy, the thickness of the gas pipe, and the like.
Accordingly, the present application is directed to overcoming the problems occurring in the related art. The microwave plasma jet excitation device adopting the piezoelectric material can realize dynamic adjustment of the device by introducing the piezoelectric material, so that a low-power microwave signal can excite gas into normal-pressure plasma, different gases can be excited into plasma, in addition, the alternating voltage is added to the piezoelectric material, the electric field intensity generated by the microwave signal in a gap between the tail end of the piezoelectric material and the tail end of the substrate structure can be alternately increased and decreased, and the performance of the excited normal-pressure plasma is better.
In this application, the microwave plasma jet excitation device that adopts piezoelectric material that this application provided includes: the piezoelectric ceramic antenna comprises a shell and a substrate structure positioned in the shell, wherein the substrate structure comprises a substrate layer, a signal wire, a piezoelectric material positioned in the shell and a connector positioned outside the shell from top to bottom, and the shell is provided with an air inlet and an air outlet; wherein a gap is arranged between the substrate structure and the piezoelectric material, and the gas entering from the gas inlet is filled in the gap; the connector is connected with the substrate structure and used for inputting microwave signals to the substrate structure so that the microwave signals enter the shell along the signal line of the substrate structure; wherein a size of a gap between the substrate structure and a distal end of the piezoelectric material varies with a voltage across the piezoelectric material to vary an electric field intensity of the microwave signal formed in the gap; and the gas filled in the gap is excited into normal pressure plasma under the action of an electric field formed by the microwave signal, and the normal pressure plasma is output from the gas outlet.
In this embodiment, fig. 1 is a schematic diagram of a microwave plasma jet excitation device using a piezoelectric material according to an embodiment of the present application. The piezoelectric material 14 in the application is a piezoelectric ceramic bending piece, and is a bending element which utilizes the inverse piezoelectric effect of piezoelectric ceramic to generate transverse displacement under the drive of an electric field, the tail end of the piezoelectric ceramic bending piece can be bent in different degrees by changing the voltage applied to the electrode of the piezoelectric ceramic bending piece, and a layer of metal material is coated/plated on the upper surface of the piezoelectric ceramic bending piece, so that a very thin (single-sided/double-sided) copper-clad plate can be adopted and adhered on the piezoelectric ceramic bending piece, and the very thin copper-clad plate is softer, so that the bending can be carried out along with the bending of the piezoelectric ceramic bending piece. Referring to fig. 1, the microwave plasma jet excitation device using piezoelectric material 14 of the present application includes a housing 11, where the housing 11 is made of quartz, and an air inlet and an air outlet are disposed at the head and tail ends of the housing 11. The inside of the casing 11 includes a substrate structure and a piezoelectric material 14, the substrate structure is fixed on the upper end surface inside the casing 11, a base layer 12 is directly contacted with the upper end surface inside the casing 11, a signal line 13 is attached below the base layer 12, a metal layer is coated or plated on the upper surface of the piezoelectric material 14 and is located below the substrate structure, and a gap is formed between the substrate structure and the piezoelectric material 14, at this time, the substrate layer 12, the signal line 13, the metal layer on the upper surface of the piezoelectric material 14, and the air filled between the substrate structure and the piezoelectric material 14 can realize the transmission of microwave signals in the signal line 13. And gas entering the housing 11 from the gas inlet will flood the gap between the substrate structure and the piezoelectric material 14. The connector 15 is located outside the housing 11 and connected to the signal line 13 in the substrate structure, the connector 15 is connected to an external microwave signal source, so as to input a microwave signal to the substrate structure in the housing 11, the microwave signal is transmitted into the housing 11 along the signal line 13 in the substrate structure, and the microwave signal in the substrate structure excites the gas filled in the gap between the substrate structure and the piezoelectric material 14 to be normal pressure plasma. Meanwhile, by changing the voltage applied to the piezoelectric material 14, the size of the gap between the substrate structure and the end of the piezoelectric material 14 can be changed, thereby changing the intensity of the electric field formed in the gap by the microwave signal. The intensity of the electric field created in the gap by the microwave signal in the substrate structure will excite the gas into an atmospheric plasma, which will be output from the gas outlet near the end of the housing 11.
Preferably, the connector can be an N-type connector, an SMA or other radio frequency connector.
In the present application, the substrate structure and the metal layer on the upper surface of the piezoelectric material 14, and the air filled between the substrate structure and the metal layer on the upper surface of the piezoelectric material 14 form a microwave signal transmission line structure.
In the present embodiment, the base layer 12, the signal line 13, the metal layer on the upper surface of the piezoelectric material 14, and the air between the substrate structure and the piezoelectric material 14 form a microwave signal transmission line structure, in which microwave signals can be transmitted in the signal line 13, so as to excite the gas into atmospheric pressure plasma.
In the present application, the housing 11 includes a first cavity and a similar conical cavity connected to the first cavity, the tip of the similar conical cavity is provided with the air inlet, and the end of the first cavity is provided with the air outlet.
In this embodiment, the interior of the housing 11 includes two cavities, including a first cavity and a cone-like cavity, a tip of the cone-like cavity is provided with a gas inlet, a tail of the first cavity is provided with a gas outlet, gas is introduced into the gas inlet, and the gas is excited into a normal pressure plasma in a gap between the substrate structure and the piezoelectric material 14 and then is output from the gas outlet for subsequent application.
Preferably, the first cavity may be any shape, such as a rectangular parallelepiped cavity, a cylindrical cavity, a square cavity, etc.
In this application, the apparatus further comprises: and the upper side and the lower side of the supporting block 16 are respectively connected with the substrate structure and the piezoelectric material 14 so as to separate the substrate structure and the piezoelectric material 14 to form a gap.
In this embodiment, the substrate layer 12 in the substrate structure is fixed on the top surface inside the housing 11, the signal line 13 is disposed on the lower surface of the substrate layer 12, the upper surface of the piezoelectric material 14 is coated or plated with a layer of metal, and a gap needs to be formed between the substrate structure and the piezoelectric material 14, and the end of the electrode of the piezoelectric material 14 can swing up and down after being connected with a voltage, so that a supporting block 16 needs to be disposed between the substrate structure and the piezoelectric material 14, and the substrate structure and the piezoelectric material 14 are spaced apart by a small supporting block 16 to form a gap, which is the substrate structure, the supporting block 16, and the piezoelectric material 14 from top.
In the present application, the electrode end of the piezoelectric material 14 is located at a position close to the side of the gas inlet.
In this embodiment, the electrode end of the piezoelectric material 14 is located at a position on one side of the gas inlet, so that the end of the piezoelectric material 14 forms a gap with the substrate structure at the gas outlet, and thus, the microwave signal in the substrate structure excites the gas in the gap into the atmospheric pressure plasma.
In the present application, the support block 16 is located proximate to the electrode end of the piezoelectric material 14.
In this embodiment, in order to ensure that the end of the piezoelectric material 14 can swing up and down after the electrodes of the piezoelectric material 14 are energized, the supporting block 16 needs to be located at a position away from the end of the piezoelectric material 14, and the position away from the end of the piezoelectric material 14 is a position close to the electrode end side of the piezoelectric material 14.
In the present application, the support block 16 is preferably made of polytetrafluoroethylene, but may be other materials such as alumina ceramics.
In the present application, the piezoelectric material 14 is configured such that when the piezoelectric material 14 is switched on, the gap between the end of the substrate structure and the end of the piezoelectric material 14 decreases with increasing voltage, so that the electric field intensity formed in the gap by the microwave signal increases with increasing voltage.
In the present embodiment, by turning on the electrodes of the piezoelectric material 14, the end of the piezoelectric material 14 is bent to the side close to the substrate structure, the gap between the end of the piezoelectric material 14 and the substrate structure is reduced, and the electric field intensity formed in the gap by the microwave signal transmitted in the substrate structure is increased. Meanwhile, the larger the power supply voltage is, the larger the bending degree of the end of the piezoelectric material 14 toward the side close to the substrate structure is, the smaller the gap between the end of the piezoelectric material 14 and the substrate structure is, and the electric field intensity formed in the gap by the microwave signal transmitted in the substrate structure is increased. When the electric field intensity formed between the gaps is increased along with the smaller gaps, the low-power microwave signal can also excite the gas into the normal-pressure plasma.
Meanwhile, the field intensities required by the excitation of different gas molecules are different, and the voltage applied to the piezoelectric material 14 is changed, so that the gap between the tail end of the substrate structure and the piezoelectric material 14 is changed, the field intensity formed between the two is changed, and the microwave signals with the same power can excite different gas molecules into normal-pressure plasma.
In the present application, the piezoelectric material 14 is switched on by an alternating voltage, and the end of the piezoelectric material 14 vibrates with the change of the alternating voltage, so that the size of the gap alternately decreases and increases; wherein the electric field intensity formed by the microwave signal in the gaps with alternating sizes is reduced along with the increase of the gaps and is increased along with the reduction of the gaps.
In this embodiment, the piezoelectric material 14 may further be connected to an alternating voltage on the electrode, and at this time, the end of the piezoelectric material 14 will be continuously and alternately bent towards the substrate structure and away from the substrate structure along with the voltage change of the alternating voltage, so that the gap between the end of the piezoelectric material 14 and the substrate structure is alternately increased and decreased, and further, the electric field intensity formed between the gaps by the microwave signal transmitted in the substrate structure is decreased and increased along with the increase and decrease of the gap alternation, and the gas filled in the gap will be excited into a normal pressure plasma with better performance. The normal pressure plasma formed by the method has the effect similar to that of pulse plasma, the pulse plasma has higher electron density, the activity of internal active substances is higher, and the intensity of the emitted ultraviolet light plasma is stronger. That is, the overall performance of the excited plasma is improved by the alternating current applied to the piezoelectric material 14 without changing the power of the microwave signal required for plasma maintenance.
The microwave plasma jet excitation device adopting the piezoelectric material is low in processing cost, and meanwhile, through the introduction of the piezoelectric material, a low-power microwave signal can be used for exciting gas into normal-pressure plasma. Meanwhile, the voltage applied to the piezoelectric material electrode is dynamically adjusted, so that the gap between the tail end of the piezoelectric material and the tail end of the substrate structure is adjusted, and different gas molecules can be excited into normal-pressure plasma. Meanwhile, the end of the piezoelectric material is vibrated by applying an alternating voltage to the piezoelectric material, so that the size of the gap between the end of the piezoelectric material and the end of the substrate structure is alternately decreased and increased, thereby making the performance of the atmospheric pressure plasma excited in the gap alternately decreased and increased in size better.
The embodiments in the present specification are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
Finally, it should also be noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or terminal that comprises the element.
The microwave plasma jet excitation device adopting the piezoelectric material provided by the invention is described in detail above, and the principle and the implementation mode of the invention are explained by applying specific examples in the text, and the description of the above examples is only used for helping to understand the method and the core idea of the invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.

Claims (8)

1.一种采用压电材料的微波等离子体射流激发装置,其特征在于,所述装置包括:壳体、位于所述壳体内的基板结构,所述基板结构由上至下为基底层、信号线,位于所述壳体内的压电材料、位于所述壳体外的连接头,所述壳体上开设有进气口和出气口;1. a microwave plasma jet excitation device using piezoelectric material is characterized in that, the device comprises: a casing, a substrate structure located in the casing, and the substrate structure from top to bottom is a base layer, a signal a wire, a piezoelectric material located in the casing, a connector located outside the casing, and an air inlet and an air outlet are provided on the casing; 其中,所述基板结构和压电材料之间具有间隙,所述进气口中进入的气体充斥在所述间隙中;Wherein, there is a gap between the substrate structure and the piezoelectric material, and the gas entering the air inlet fills the gap; 所述连接头与所述基板结构连接,所述连接头用于将微波信号输入到所述基板结构,以使所述微波信号沿着所述基板结构的信号线进入到所述壳体内;The connector is connected to the substrate structure, and the connector is used to input a microwave signal to the substrate structure, so that the microwave signal enters the housing along a signal line of the substrate structure; 其中,所述基板结构和压电材料的末端之间具有的间隙的大小随着所述压电材料上的电压而变化,以改变所述微波信号在所述间隙中形成的电场强度;Wherein, the size of the gap between the substrate structure and the end of the piezoelectric material changes with the voltage on the piezoelectric material, so as to change the electric field strength formed by the microwave signal in the gap; 其中,充斥在所述间隙中的气体在所述微波信号形成的电场的作用下被激发为常压等离子体,所述常压等离子体由所述出气口输出。The gas filled in the gap is excited into atmospheric-pressure plasma under the action of the electric field formed by the microwave signal, and the atmospheric-pressure plasma is output from the gas outlet. 2.根据权利要求1所述的装置,其特征在于,所述基板结构与所述压电材料的上表面的金属层,以及所述基板结构与所述压电材料的上表面的金属层之间充斥的空气组成微波信号传输线结构。2 . The device according to claim 1 , wherein the metal layer on the upper surface of the substrate structure and the piezoelectric material, and the difference between the substrate structure and the metal layer on the upper surface of the piezoelectric material. 3 . The air filled between them forms a microwave signal transmission line structure. 3.根据权利要求1所述的装置,其特征在于,所述壳体包括第一空腔,以及与所述第一空腔连接的类锥形空腔,所述类锥形空腔的尖端部设置所述进气口,所述第一空腔的末端设置所述出气口。3. The device of claim 1, wherein the housing comprises a first cavity, and a conical-like cavity connected to the first cavity, the tip of the conical-like cavity The air inlet is provided at the end of the first cavity, and the air outlet is provided at the end of the first cavity. 4.根据权利要求1所述的装置,其特征在于,所述装置还包括:位于所述壳体内的支撑块,所述支撑块的上下两侧分别与所述基板结构和所述压电材料连接,以将所述基板结构和所述压电材料隔开形成间隙。4 . The device according to claim 1 , wherein the device further comprises: a support block located in the housing, the upper and lower sides of the support block are respectively connected with the substrate structure and the piezoelectric material. 5 . A connection is made to separate the substrate structure and the piezoelectric material to form a gap. 5.根据权利要求1-4任一所述的装置,其特征在于,所述压电材料的电极端位于靠近所述进气口一侧的位置。5 . The device according to claim 1 , wherein the electrode end of the piezoelectric material is located at a position close to one side of the air inlet. 6 . 6.根据权利要求4所述的装置,其特征在于,所述支撑块位于靠近所述压电材料的电极端的位置。6. The device of claim 4, wherein the support block is located close to the electrode end of the piezoelectric material. 7.根据权利要求1所述的装置,其特征在于,所述压电材料,用于在所述压电材料接通电压时,所述基板结构的末端和所述压电材料的末端之间的间隙随着电压的增大而减小,以使所述微波信号在所述间隙中形成的电场强度随着电压的增大而增大。7 . The device of claim 1 , wherein the piezoelectric material is used between the end of the substrate structure and the end of the piezoelectric material when the piezoelectric material is connected to a voltage. 8 . The gap decreases with the increase of the voltage, so that the electric field strength formed by the microwave signal in the gap increases with the increase of the voltage. 8.根据权利要求1所述的装置,其特征在于,所述压电材料接通交变电压,所述压电材料的的末端随着所述交变电压的变化而振动,以使所述间隙的大小交替性地减小和增大;8. The device according to claim 1, wherein the piezoelectric material is connected to an alternating voltage, and a tip of the piezoelectric material vibrates with the change of the alternating voltage, so that the piezoelectric material is The size of the gap decreases and increases alternately; 其中,所述微波信号在大小交替性变化的间隙中形成的电场强度随着所述间隙的增大而减小,并随着所述间隙的减小而增大。Wherein, the electric field strength formed by the microwave signal in the gaps with alternating sizes decreases as the gap increases, and increases as the gap decreases.
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Publication number Priority date Publication date Assignee Title
CN112996209A (en) * 2021-05-07 2021-06-18 四川大学 Structure and array structure for microwave excitation of atmospheric pressure plasma jet
CN114477362A (en) * 2022-02-24 2022-05-13 西安电子科技大学 Plasma activated water device based on piezoelectric material

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