CN202167501U - Copper indium gallium selenium solar battery - Google Patents
Copper indium gallium selenium solar battery Download PDFInfo
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- CN202167501U CN202167501U CN 201120144916 CN201120144916U CN202167501U CN 202167501 U CN202167501 U CN 202167501U CN 201120144916 CN201120144916 CN 201120144916 CN 201120144916 U CN201120144916 U CN 201120144916U CN 202167501 U CN202167501 U CN 202167501U
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- Prior art keywords
- indium gallium
- copper indium
- selenium
- gallium selenium
- solar cell
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The utility model discloses a copper indium gallium selenium solar battery which includes a soda-lime glass substrate and a copper indium gallium selenium thin layer. The copper indium gallium selenium thin layer is electroplated on the soda-lime glass substrate. The copper indium gallium selenium solar battery adopts four elements of copper, indium, gallium, and selenium to compose a solid target material. An atmosphere which is full of the selenium gas in an annealing furnace can restrain the selenium loss in the copper indium gallium selenium thin layer, thus guaranteeing the selenium uniformity in the copper indium gallium selenium thin layer, and ensuring the copper indium gallium selenium mass production technology which is high in transformation rate. Besides, the production is rapid and convenient, and no toxic gas is generated in the production process.
Description
Technical field
The utility model relates to a kind of solar cell, relates in particular to a kind of copper indium gallium selenium solar cell.
Background technology
Existing CIGS thin-film photovoltaic solar chip manufacturing process adopts the soda-lime glass substrate, with 400-500 ℃ high temperature evaporation: copper, indium, gallium, materials such as two selenium; Or use earlier sputtering technology, plate wherein three kinds of metal unit cellulosic material after, adopt " selenizing " technology again, add the selenium material.This is a very difficult repetition, and technology very slowly; Also have another kind of method, use and electroplate depositing technology, or use " metal " or " metal oxide " to make through nano print technology; Neither being adapted to of these technologies produced in batches, and single selenizing technology just was 8 hours, and needs to use a large amount of toxic gases, such as using hydrogen selenide to come progressively to make the selenizing of copper indium gallium thin layer to become the CIGS thin-film layer.
The moulding on the substrate of " high temperature " of CIGS thin-film layer, purpose are in order to grow bigger crystallization, crystalline solid minimum this be itself thickness (1.0-2.0 micron) thickness over half.Too small crystal can produce a large amount of crystal boundaries, causes " electronics-hole " to recombinate once more, reduces the conversion efficiency of battery.Another purpose of high temperature is " sodium " that promotes " soda-lime glass " lining; After passing the molybdenum film layer; Be diffused in " CIGS " thin layer, " sodium " ion can promote much more more " CIGS " growth for Thin Film that have " p-type alloy ", accomplish " CIGS " these four kinds of elements at high temperature coevaporation be very bothersome; Technology extremely rambunctious is unwell to batch process simultaneously.
To at high temperature carry out " CIGS " film; And can guarantee that it holds optimized chemical composition ratio, and becoming the mass production processes of standard, we use the plain solid-state target of " CIGS " quaternary that has matched chemical composition; Use magnetron sputtering technique, disposable plated film; Simultaneously, for avoiding the loss of " selenium " under the high temperature, the technology that general industry adopts is to utilize " hydrogen selenide " gas, the loss that replenishes " selenium "; But this gas is poisonous, the incompatible batch process in batches; For fear of this defective, we use two warm area annealing furnaces, and use solid-state " selenium " to control the loss of " selenium ".
The utility model content
The technical problem that the utility model will solve provides a kind of solar cell that can fast produce and not produce in process of production toxic gas in a large number.
For solving above-mentioned technical problem, the utility model is realized through following scheme: a kind of copper indium gallium selenium solar cell, and it comprises soda-lime glass substrate and CIGS thin-film layer, the CIGS thin-film layer is electroplated on the soda-lime glass substrate.
Be coated with about 0.35 micron thick molybdenum film in the middle of said soda-lime glass substrate and the CIGS thin-film layer.
Upper surface setting " p-n junction " zone of said CIGS thin-film layer.
Be coated with the cadmium sulfide of 0.05 micron thick above the said CIGS thin-film layer.
Be coated with the insulating barrier zinc oxide of about 0.1 micron thick on the said cadmium sulfide.
Be coated with the zinc oxide ginseng aluminium of the conductive, transparent of about 0.35 micron thick on the said zinc oxide.
Said zinc oxide ginseng aluminium upper surface is provided with the nickel of about 0.05 micron thick.
Be provided with about 3.0 micron thick aluminium films above the said nickel.
Be coated with the layer of protecting nickel of about 0.05 micron thick protection aluminium above the said aluminium film.
Be coated with the sodium calcium cover glass of about 1.0 to 4.0 millimeters thick above the said protection nickel.
The utility model copper indium gallium selenium solar cell adopts the plain composite solid state target of " CIGS " quaternary; In annealing furnace, has rich " selenium " gas atmosphere; The loss of controlling " selenium " in " CIGS " film has guaranteed the uniformity of selenium between whole " CIGS " thin layer, has guaranteed " CIGS " mass production processes of high-conversion rate; And convenient and swift, production process does not produce toxic gas.
Description of drawings
Fig. 1 is the utility model matrix cross-sectional view;
Fig. 2 is the CIGS crystalline phase figure of the utility model;
Fig. 3 is the embodiment sketch map of the utility model.
Embodiment
Like Fig. 1,2, shown in 3; A kind of copper indium gallium selenium solar cell, it comprises soda-lime glass substrate 1 and CIGS thin-film layer 3, CIGS thin-film layer 3 is electroplated on soda-lime glass substrate 1; Be coated with about 0.35 micron thick molybdenum film 2 in the middle of soda-lime glass substrate 1 and the CIGS thin-film layer 3; The upper surface setting " p-n junction " of CIGS thin-film layer 3 zone 11 is coated with the cadmium sulfide 4 of 0.05 micron thick above the CIGS thin-film layer 3, be coated with the insulating barrier zinc oxide 5 of about 0.1 micron thick on the cadmium sulfide 4; Be coated with the zinc oxide ginseng aluminium 6 of the conductive, transparent of about 0.35 micron thick on the zinc oxide 5; Zinc oxide ginseng aluminium 6 upper surfaces plate the nickel 7 of about 0.05 micron thick, are provided with about 3.0 micron thick aluminium films 8 above the nickel 7, are coated with the layer of protecting nickel 9 of about 0.05 micron thick protection aluminium above the aluminium film 8; Be coated with about 1.0 to 4.0 millimeters thick above the protection nickel 9, or the sodium calcium cover glass 10 of 3.2 millimeters standard thicknesses.
We at first use a plain composite solid state target such as " copper, indium, gallium, selenium " quaternary that has matched chemical composition; Under lower substrate temperature (250-300 degree centigrade), with " pulse dc power sputter " plated film, with copper, indium; Gallium, elements such as selenium, disposable plating is on glass substrate 1; And then adopt and to have the annealing furnace that " selenium " closes envelope atmosphere, under 400-500 ℃ of high temperature, anneal.This technology has shortened the time of the required usefulness of tradition " CIGS " manufacturing process, has guaranteed the optimization chemical composition of film; Exempted and reach eight after a little while " selenizing technologies " in the traditional handicraft, traditional " selenizing " means are to use the gas of band " selenium " element, and the chemical reaction through several hours is from the top layer of in type " copper indium gallium " film, progressively down " selenizing ".
We adopt and are not higher than 300 degrees centigrade substrate temperature, in the time of avoiding the sputter of quaternary element, and the loss of selenium; And then; We will possess the CIGS thin-film layer 3 semi-finished product chip of good " chemical composition "; Leave the vacuum sputtering production line under order for avoiding taking " CIGS " vacuum line, it is a bottleneck process procedure the most complicated on the production line, and adopts independent cheap annealing furnace to carry out high annealing; This annealing furnace is special two warm area annealing furnaces, places solid-state selenium element with crucible 13 in the annealing furnace, under the air pressure of an atmosphere, carries out high annealing, grows " CIGS " crystal of big volume; Because the plain solid-state target of quaternary is adopted in the front; Guaranteed the chemical composition of " CIGS "; Need not to add the selenium element, solid-state " selenium " placed in the annealing furnace, it is not in order in " CIGS " film, to add " selenium "; But rich " selenium " gas atmosphere is arranged in the annealing furnace in order to guarantee, control the loss of " selenium " in " CIGS " film.This technology has guaranteed big volume " CIGS " crystal; The optimization and the repeatability of " CIGS " chemical composition have been guaranteed; " CIGS " film does not have the loss of " selenium " during having guaranteed to anneal; Guarantee the uniformity of selenium between whole " CIGS " thin layer, guaranteed " CIGS " mass production processes of high-conversion rate.The superiors of noting " CIGS " " absorbed layer " are very narrow " p-n junction " zones 11; Through sunlight " photovoltaic " effect " negatron " that discharged and " hole " of soaring, form " p-n junction " zone 11 in " negatron-hole ", it must be arranged on the superiors of " CIGS " layer.The bottom of " CIGS " must have rich " p-type " conduction, and the position, upper strata of " CIGS "; Need to reduce " p-type conduction " composition, make the last layer of CIGS thin-film layer 3, then " cadmium " in cadmium sulfide 4 thin layers; Can down spread, be penetrated into the upper epidermis of CIGS thin-film, make it and convert " n-type conduction " to; Simultaneously, we also will control " sodium " in " soda-lime glass " well upwards infiltration and assurance not allow " selenium " to run off; Because " lack copper " and the film of " sodium dopant " is arranged, all can promote " CIGS " film of " p-type "; And lack the film of " selenium "; But can promote " CIGS " film of " n-type "; We place " selenium " fritter or powdery in annealing furnace, will plate the substrate of " CIGS " then, in this has the annealing furnace of " selenium " atmosphere, carry out 300-500 degree C; 30 to 180 minutes annealing.
Table 1: " selenium " evaporating pressure and temperature
Shown in Figure 3, an embodiment wherein, in the method for laboratory operation: in the quartz ampoule 12 at four cun diameters, a placement plates the substrate of " CIGS " film earlier; Solid-state " selenium " of number grammes per square metre is placed in the other end; And then vacuumize sealing, and the temperature curve heating of pressing figure four to quartz ampoule 12; Like this, " selenium " that is evaporated can make in the scope of placing " CIGS " film substrate 14 positions in the quartz ampoule 12, keeps the atmosphere of " selenium ", the loss of control " selenium ", and after annealing, let " selenium " atmosphere in another warm area condensation.
Claims (10)
1. copper indium gallium selenium solar cell, it is characterized in that: it comprises soda-lime glass substrate (1) and CIGS thin-film layer (3), CIGS thin-film layer (3) is electroplated on soda-lime glass substrate (1).
2. copper indium gallium selenium solar cell according to claim 1 is characterized in that: be coated with about 0.35 micron thick molybdenum film (2) in the middle of said soda-lime glass substrate (1) and the CIGS thin-film layer (3).
3. copper indium gallium selenium solar cell according to claim 1 is characterized in that: upper surface setting " p-n junction " zone (11) of said CIGS thin-film layer (3).
4. copper indium gallium selenium solar cell according to claim 1 is characterized in that: the cadmium sulfide (4) that is coated with 0.05 micron thick above the said CIGS thin-film layer (3).
5. copper indium gallium selenium solar cell according to claim 4 is characterized in that: the insulating barrier zinc oxide (5) that is coated with about 0.1 micron thick on the said cadmium sulfide (4).
6. copper indium gallium selenium solar cell according to claim 5 is characterized in that: the zinc oxide ginseng aluminium (6) that is coated with the conductive, transparent of about 0.35 micron thick on the said zinc oxide (5).
7. copper indium gallium selenium solar cell according to claim 6 is characterized in that: said zinc oxide ginseng aluminium (6) upper surface plates the nickel (7) of about 0.05 micron thick.
8. copper indium gallium selenium solar cell according to claim 7 is characterized in that: be provided with about 3.0 micron thick aluminium films (8) above the said nickel (7).
9. copper indium gallium selenium solar cell according to claim 8 is characterized in that: the layer of protecting nickel (9) that is coated with about 0.05 micron thick protection aluminium above the said aluminium film (8).
10. copper indium gallium selenium solar cell according to claim 9 is characterized in that: the sodium calcium cover glass (10) that is coated with about 1.0 to 4.0 millimeters thick above the said protection nickel (9).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120144916 CN202167501U (en) | 2011-05-09 | 2011-05-09 | Copper indium gallium selenium solar battery |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120144916 CN202167501U (en) | 2011-05-09 | 2011-05-09 | Copper indium gallium selenium solar battery |
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| CN202167501U true CN202167501U (en) | 2012-03-14 |
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| CN 201120144916 Expired - Fee Related CN202167501U (en) | 2011-05-09 | 2011-05-09 | Copper indium gallium selenium solar battery |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103165748A (en) * | 2013-02-28 | 2013-06-19 | 宁波大学 | Method of preparing copper-zinc tin-sulphur solar cell absorbed layer thin film |
| CN104347752A (en) * | 2013-08-02 | 2015-02-11 | 许昌天地和光能源有限公司 | Method for preparing copper indium gallium selenide (CIGS) absorption layer film |
| CN112259623A (en) * | 2020-10-20 | 2021-01-22 | 北京圣阳科技发展有限公司 | Method for improving crystallinity of light absorption layer of Copper Indium Gallium Selenide (CIGS) thin-film solar cell |
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2011
- 2011-05-09 CN CN 201120144916 patent/CN202167501U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103165748A (en) * | 2013-02-28 | 2013-06-19 | 宁波大学 | Method of preparing copper-zinc tin-sulphur solar cell absorbed layer thin film |
| CN103165748B (en) * | 2013-02-28 | 2016-06-15 | 宁波大学 | A kind of method preparing copper-zinc-tin-sulfur solar battery obsorbing layer thin film |
| CN104347752A (en) * | 2013-08-02 | 2015-02-11 | 许昌天地和光能源有限公司 | Method for preparing copper indium gallium selenide (CIGS) absorption layer film |
| CN112259623A (en) * | 2020-10-20 | 2021-01-22 | 北京圣阳科技发展有限公司 | Method for improving crystallinity of light absorption layer of Copper Indium Gallium Selenide (CIGS) thin-film solar cell |
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| C14 | Grant of patent or utility model | ||
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Granted publication date: 20120314 Termination date: 20120509 |