CN105483652A - Chemical vapor deposition device and use method thereof - Google Patents

Chemical vapor deposition device and use method thereof Download PDF

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CN105483652A
CN105483652A CN 201510898023 CN201510898023A CN105483652A CN 105483652 A CN105483652 A CN 105483652A CN 201510898023 CN201510898023 CN 201510898023 CN 201510898023 A CN201510898023 A CN 201510898023A CN 105483652 A CN105483652 A CN 105483652A
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plate
pole
base
deposition
lower
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CN 201510898023
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CN105483652B (en )
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武汉华星光电技术有限公司
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52Controlling or regulating the coating process

Abstract

The invention provides a chemical vapor deposition device and a use method thereof. The chemical vapor deposition device comprises an upper pole plate, a lower pole plate, a deposition base plate, a base and a supporting part, wherein the upper pole plate and the lower pole plate are oppositely arranged, the deposition base plate is arranged on the lower pole plate, the base is arranged under the lower pole plate, and the supporting part is arranged under the base; the supporting part, the base, the lower pole plate and the deposition base plate are connected through a plurality of threaded columns and a plurality of nuts arranged on the threaded columns in a sleeving mode and located on the deposition base plate; the lower pole plate can be inclined to different positions and by different angles by adjusting the height of the nuts, and therefore the distance between the upper pole plate and the lower pole plate can be adjusted; in the actual production and film formation process, the distance of the parts large in film thickness can be reduced, the distance of the parts small in film thickness can be increased, and therefore the film thickness can be changed, and the uniformity of the film thickness can be improved.

Description

化学气相沉积装置及其使用方法 Chemical vapor deposition apparatus and method of use

技术领域 FIELD

[0001]本发明涉及化学气相沉积技术领域,尤其涉及一种化学气相沉积装置及其使用方法。 [0001] The present invention relates to chemical vapor deposition techniques, and in particular relates to a chemical vapor deposition apparatus and method of use.

背景技术 Background technique

[0002] 化学气相沉积(CVD,Chemical Vapor Deposit1n)是一种制备薄膜材料的气相生长方法,它是把一种或几种含有构成薄膜元素的化合物、单质气体通入放置有基材的反应室,借助空间气相化学反应在基体表面上沉积固态薄膜的工艺技术。 [0002] Chemical vapor deposition (CVD, Chemical Vapor Deposit1n) is a vapor phase growth method for preparing a thin film material, which is a reaction chamber to one or several compounds containing elements constituting a thin film, a single substance gas into the base material is placed , space-gas phase chemical reaction in the process of the solid film were deposited on the substrate surface. 化学气相沉积的反应机理为:将反应气体导入反应器中,在热能、电能或光能的作用下发生解离而变成活性极强的离子或离子团(plasma),所述离子或离子团通过扩散方式到达固体基板表面发生化学反应生成固态产物并沉积在基板表面。 The reaction mechanism for chemical vapor deposition: the reaction gas into the reactor, become highly active ions or cluster ions (Plasma) dissociates under the action of thermal energy, electrical energy, or light energy, the ion or ionic group the solid surface of the substrate form a solid chemical reaction products and deposited on the substrate surface by diffusion reach.

[0003]如图1所示,为现有的一种化学气相沉积装置,其包括制程腔100、设于制程腔100内且相对设置的上极板(0丨€如861')200与下极板(311806口1:01')300、以及设于制程腔100内且设于所述下极板300上方的玻璃基板400,其中,所述制程腔100是CVD成膜的反应场所,气体在制程腔100中电离,部分或全部发生解离而形成高能原子、正负离子、电子和气体分子的混合体,到达基板表面发生化学反应并沉积在玻璃基板400上;所述上极板200用于让反应气体能够均匀的到达玻璃基板400表面,从而提高成膜的均匀性;所述下极板300给玻璃基板400提供一个平行度很好的沉膜平台并且给玻璃基板400提供反应所需的制程温度。 [0003] As shown, for the conventional chemical vapor deposition apparatus, which includes a process chamber 100, disposed in the process chamber 100 and disposed on the opposite plate (such as 861 0 Shu € ') and a lower one 200 plate (1:01 311,806 ') 300, and disposed in the process chamber 100 and positioned within the lower glass plate 400 above the substrate 300, wherein the process chamber 100 is a CVD film forming properties of the reaction gas in the ionization process chamber 100, form a portion or all of the energetic atoms dissociation occurs, positive and negative ions, electrons, and a mixture of gas molecules reaching the substrate surface and the chemical reaction deposited on a glass substrate 400; 200 with the upper plate in the reaction gas can uniformly reach the surface of the glass substrate 400, thereby improving the uniformity of the film formation; the lower plate 300 to provide a degree of parallel to the glass substrate 400 and a good platform to sink film glass substrate 400 to provide the desired reaction the process temperature.

[0004]对于化学气相沉积来说,上极板200与下极板300之间的间距(spacing)是CVD成膜的重要工艺参数,它影响离子团(plasma)的分布,从而影响膜层的沉积速率和成膜均匀性。 [0004] For the chemical vapor deposition, the upper plate 200 and the pitch (spacing) between the lower plate 300 are important CVD deposition process parameters, which affect the distribution of ionic groups (Plasma), thereby affecting film layer deposition rate and film uniformity. 在一定范围内,当间距增大时,成膜的厚度也增大。 Within a certain range, when the pitch is increased, the thickness of the film formation increases. 然而,如果间距太大,大大影响淀积速度,并造成颗粒(particle)问题,则会严重影响成膜质量。 However, if the spacing is too large, greatly affect the deposition rate and cause particles (particle) problem, it will seriously affect film quality. 如果间距太小,从喷嘴(Showhead)出来的强气流直接喷到玻璃基板400上,强气流直接冲击玻璃基板400表面,离子可能来不及淀积就被强气流带走,这样就降低了成膜速率。 If the spacing is too small, strong wind from the nozzle (Showhead) out directly sprayed onto a glass substrate 400, a strong air flow directly impact the surface of the glass substrate 400, ion deposition may be too late to be taken away strong currents, thus reducing the film forming rate . 所以,在适当的范围内,调整上极板200与下极板300的间距大小,可以相应改变成膜的厚度。 Therefore, in an appropriate range, the size of the pitch adjustment plate 200 and bottom plate 300, a film thickness can be correspondingly changed.

[0005]在实际生产中,制程腔100两侧的膜厚是存在差异的。 [0005] In actual production, the thickness of both sides of the process chamber 100 is there is a difference. 在图1所示的制程腔结构中,制程腔100左侧的干栗(Dry Pump)500具有抽气的作用,导致腔内两侧气流不对称,即腔左侧的气流密度要大于右侧的气流密度。 In the process chamber configuration shown in FIG. 1, the left side of the process chamber 100 dry Li (Dry Pump) 500 having a suction effect resulting in asymmetric cavity on both sides of the gas flow, i.e. airflow is greater than the density of the left side of the right chamber air density. 再者,制程腔100左侧的真空阀(Slit Valve)600处开有小槽,导致离子团(plasma)在此聚集程度比较高。 Furthermore, the process chamber 100 on the left side of the vacuum valve (Slit Valve) opening at the small groove 600, resulting in ionic groups (Plasma) this relatively high degree of aggregation. 综合以上两点,制程腔100左侧成膜的膜厚要大于右侧成膜的膜厚,使用现有的化学气相沉积装置会导致成膜的不均匀。 Based on the above two points, the deposition thickness of 100 on the left side of the process chamber is greater than the thickness of the right side of film formation, using a conventional chemical vapor deposition apparatus can cause uneven film formation.

发明内容 SUMMARY

[0006]本发明的目的在于提供一种化学气相沉积装置,在使用的过程中可以根据成膜的均匀程度调整不同位置的上、下极板之间的间距大小,将膜厚比较大的地方间距调小,将膜厚比较小的地方间距调大,从而改变膜厚,对膜厚均匀性起到改善作用。 [0006] The object of the present invention is to provide a chemical vapor deposition apparatus, on different positions can be adjusted according to the degree of uniformity of deposition during use, the size of the spacing between the plates, where relatively large film thickness transfer a small pitch, where a relatively small film thickness pitches transfer large, thereby changing the film thickness, the film thickness uniformity improvement functions.

[0007]本发明的目的还在于提供一种化学气相沉积装置的使用方法,通过调节化学气相沉积装置中不同位置的螺纹柱上的螺帽的高度,调节不同位置的上、下极板之间的间距,将膜厚比较大的地方间距调小,将膜厚比较小的地方间距调大,从而改变膜厚,起到改善膜厚均匀性的作用。 [0007] The object of the present invention is to provide a method using a chemical vapor deposition apparatus, between the plates by adjusting the height of a chemical vapor deposition apparatus nut threaded column at different positions, in different positions of adjustment, the pitch, where relatively large thickness of the transfer of small pitch, where a relatively small film thickness pitches transfer large, thereby changing the film thickness, play a role in improving the uniformity of the film thickness.

[0008]为实现上述目的,本发明提供一种化学气相沉积装置,包括相对设置的上极板与下极板、设于所述下极板上方的沉积基板、设于所述下极板下方的基座、以及设于所述基座下方的支撑件; [0008] To achieve the above object, the present invention provides a chemical vapor deposition apparatus, comprising an upper plate provided opposite to the bottom plate, the deposition substrate disposed above the lower plate, disposed below the lower plate a base, and a support member disposed below said base;

[0009]其中,所述基座包括用于支撑所述下极板的第一支撑板、以及固定连接于所述第一支撑板中央下方的支撑块;所述支撑件包括用于支撑所述基座的第二支撑板、以及固定连接于所述第二支撑板中央下方的支撑柱; [0009] wherein the base comprises a first support plate for supporting said lower electrode plate, and fixedly connected to the first support plate below the central support block; said support member comprises means for supporting the the second supporting base plate, and fixedly connected to the support column below the center of the second support plate;

[0010]所述第二支撑板与第一支撑板、下极板、及沉积基板之间通过数个螺纹柱以及分别套设于数个螺纹柱上且位于所述沉积基板上方的数个螺帽相连接; [0010] by the number of columns and the threaded sleeve provided on each column and a plurality of threads located above the deposition substrate between the plurality of spiral plates, the deposition substrate and the second support plate and the first support plate, a lower It is connected to the cap;

[0011]所述数个螺纹柱的底部分别与第二支撑板固定连接,所述第一支撑板、下极板、及沉积基板中分别设有数个第一、第二、第三通孔,所述数个螺纹柱穿过所述第一支撑板、下极板、及沉积基板中的第一、第二、第三通孔并延伸出去,数个螺帽从所述沉积基板的上方套设于数个螺纹柱上,并且与螺纹柱之间实现螺纹连接,从而通过调节数个螺帽的高度即可实现所述下极板的不同位置及不同角度的倾斜,使得上、下极板之间的间距可调。 [0011] The plurality of bottom threaded post are respectively connected to the second support plate fixed to the first support plate, a lower plate, and the deposition substrate are respectively provided with a plurality of first, second, third through hole, the plurality of threaded post through said first support plate, a lower plate, and the substrate is deposited a first, second, and third through-hole extending out from said plurality of nut sleeve is deposited over the substrate provided in a plurality of threaded column and to achieve a threaded connection between the threaded post, so that by adjusting the height of the nut can be realized a number of different positions and different angles of inclination of the lower plate, so that the upper and lower plate spacing between adjustable.

[0012]所述支撑件与基座、下极板、及沉积基板之间通过两个螺纹柱及两个螺帽相连接,且所述两个螺纹柱分别位于所述下极板的左右两侧。 [0012] between the support and the base, bottom plate, the deposition substrate and the two are connected by two threaded post and nut, said two threaded post and the lower plate are located about two side.

[0013]所述上、下极板为两块上下平行的电极,其中,所述上极板与射频电源相连,所述下极板接地。 [0013] The upper and lower two vertical parallel plate electrode, wherein said RF power source connected to the upper plate, the lower plate is grounded.

[0014]所述沉积基板为玻璃基板。 The [0014] deposition substrate is a glass substrate.

[0015]所述第一支撑板与第二支撑板为圆形或三角形基板。 [0015] the first support plate and the second support plate is circular or triangular substrate.

[0016]所述基座通过传动装置连接到步进马达,以步进方式升降下极板。 The [0016] base is connected to the stepping motor via a transmission, in a stepwise manner at the lifting plate.

[0017]所述化学气相沉积装置还包括腔室本体,所述上极板、下极板、沉积基板、基座均位于所述腔室本体内部,所述支撑件的第二支撑板位于所述腔室本体内部,所述支撑件的支撑柱的上部位于所述腔室本体内部,下部从所述腔室本体穿出,位于所述腔室本体外部;所述腔室本体上设有用来向腔室本体内部通入反应气体的进气孔。 [0017] The chemical vapor deposition apparatus further comprises a chamber body, said top plate, bottom plate, the deposition substrate, are located inside the base of the chamber body, the second supporting member is positioned by the support plate said internal chamber body, said upper support column supporting member located inside the chamber body, from the lower portion of the chamber body piercing, located outside the chamber body; said chamber body is provided for into the reaction gas inlet holes to the interior chamber body.

[0018]所述支撑柱外设有水平方向限位套,所述水平方向限位套位于所述腔室本体的外部,且通过连接机构固定于墙壁上。 [0018] The support column outside the limit set in the horizontal direction, the horizontal direction of the stopper sleeve located outside of the chamber body, and is secured by connecting means to the wall.

[0019]本发明还提供一种化学气相沉积装置的使用方法,包括如下步骤: [0019] The present invention also provides a method of using a chemical vapor deposition apparatus, comprising the steps of:

[0020]步骤1、提供一化学气相沉积装置,其包括相对设置的上极板与下极板、设于所述下极板上方的沉积基板、设于所述下极板下方的基座、以及设于所述基座下方的支撑件; [0020] Step 1 provides a CVD apparatus, which includes an upper plate disposed opposite to the bottom plate, the deposition substrate disposed above the lower plate, provided in the base below the lower plate, and a support member disposed below said base;

[0021]其中,所述基座包括用于支撑所述下极板的第一支撑板、以及固定连接于所述第一支撑板中央下方的支撑块;所述支撑件包括用于支撑所述基座的第二支撑板、以及固定连接于所述第二支撑板中央下方的支撑柱; [0021] wherein the base comprises a first support plate for supporting said lower electrode plate, and fixedly connected to the first support plate below the central support block; said support member comprises means for supporting the the second supporting base plate, and fixedly connected to the support column below the center of the second support plate;

[0022]所述第二支撑板与第一支撑板、下极板、及沉积基板之间通过数个螺纹柱以及分别套设于数个螺纹柱上且位于所述沉积基板上方的数个螺帽相连接; [0022] by the number of columns and the threaded sleeve provided on each column and a plurality of threads located above the deposition substrate between the plurality of spiral plates, the deposition substrate and the second support plate and the first support plate, a lower It is connected to the cap;

[0023]所述数个螺纹柱的底部分别与第二支撑板固定连接,所述第一支撑板、下极板、及沉积基板中分别设有数个第一、第二、第三通孔,所述数个螺纹柱穿过所述第一支撑板、下极板、及沉积基板中的第一、第二、第三通孔并延伸出去,数个螺帽从所述沉积基板的上方套设于数个螺纹柱上,并且与螺纹柱之间实现螺纹连接;所述腔室本体上设有用来向腔室本体内部通入反应气体的进气孔; [0023] The plurality of bottom threaded post are respectively connected to the second support plate fixed to the first support plate, a lower plate, and the deposition substrate are respectively provided with a plurality of first, second, third through hole, the plurality of threaded post through said first support plate, a lower plate, and the substrate is deposited a first, second, and third through-hole extending out from said plurality of nut sleeve is deposited over the substrate provided in a plurality of threaded column and to achieve a threaded connection between the threaded post; provided with inlet holes to the interior of the chamber body of the reaction gas into the chamber body;

[0024] 步骤2、通过进气孔向腔室本体内部通入反应气体,射频电源通过上极板向腔室本体内部提供能量,下极板作为下电极直接接地,从而在上极板和下极板之间产生射频电场,将反应气体激发成等离子体,进而对放置于下极板上的沉积基板进行镀膜; [0024] Step 2, through the inlet hole to the chamber body through the interior of the reaction gas, the RF power source supplies energy to the interior of the chamber body through the upper plate, the lower plate as the lower electrode directly to ground, so that the lower plate and generating a radio frequency electric field between the plates, the reaction gas is excited into a plasma, and then deposited on the substrate placed on the lower electrode plate used for coating;

[0025]步骤3、当所述步骤2中出现下极板上不同位置的成膜厚度不一的情况时,停止沉积制程,打开腔室本体,通过调节不同位置的螺纹柱上的螺帽的高度,调节不同位置的上、下极板之间的间距,将膜厚比较大的地方间距调小,将膜厚比较小的地方间距调大,从而改变膜厚,起到改善膜厚均匀性的作用。 [0025] Step 3, when the film thickness occurs in the case of the step 2 of electrode plates in different positions varying, stopping the deposition process, the chamber body is opened, by adjusting the screw nut at different positions of column height, adjustable in different positions, the distance between the bottom plate, the film thickness where relatively large transfer of small pitch, where a relatively small film thickness pitches transfer large, thereby changing the film thickness, acts to improve the film thickness uniformity role.

[0026]所述化学气相沉积装置中,所述支撑件与基座、下极板、及沉积基板之间通过两个螺纹柱及两个螺帽相连接,且所述两个螺纹柱分别位于所述下极板的左右两侧; [0026] The chemical vapor deposition apparatus, said support member are connected by two threaded post between the base and the two nuts, the bottom plate, and with the deposition substrate, and the two are located in the threaded post left and right sides of the lower plate;

[0027]在步骤2中,当下极板左侧成膜的厚度要大于右侧成膜的厚度时,所述步骤3中,通过将下极板左侧的螺帽向上拧,将下极板右侧的螺帽向下拧,从而使得下极板的左侧向上倾斜,右侧向下倾斜,此时,左侧的上、下极板的间距变小,右侧的上、下极板的间距变大,从而降低左侧的成膜速率及厚度,提高右侧的成膜速率及厚度,进而提高下极板上成膜的均匀性; When [0027] In Step 2, the lower left side of the deposition thickness is greater than the thickness of the plates forming the right side, in the step 3, the nut is screwed up at the left side of the plate, the lower plate the nut is screwed down the right side, so that the upwardly inclined bottom plate of the left, downward to the right, this time, on the left, the smaller plate spacing, on the right side of the lower plate the pitch is large, thereby reducing the deposition rate and the thickness of the left, right and thickness to improve the film formation rate, thereby improving the uniformity of the deposition electrode plate;

[0028]在步骤2中,当下极板右侧成膜的厚度要大于左侧成膜的厚度时,所述步骤3中,通过将下极板右侧的螺帽向上拧,将下极板左侧的螺帽向下拧,从而使得下极板的右侧向上倾斜,左侧向下倾斜,此时,右侧的上、下极板的间距变小,左侧的上、下极板的间距变大,从而降低右侧的成膜速率及厚度,提高左侧的成膜速率及厚度,进而提高下极板上成膜的均匀性。 When [0028] In step 2, when the lower right side of the electrode plate thickness greater than a film thickness of the left side of the deposition, in the step 3, the right side of the nut by screwing up the bottom plate, the lower plate the nut is screwed down the left, so that the right side of the inclined bottom plate, downward to the left, this time, on the right side of the lower plate smaller pitch, on the left side of the lower plate the pitch is large, thereby reducing the deposition rate and the thickness of the right, left to improve the film formation rate and thickness, thereby improving the uniformity of deposition of the electrode plate.

[0029]本发明的有益效果:本发明提供的一种化学气相沉积装置及其使用方法,所述化学气相沉积装置包括相对设置的上、下极板、设于所述下极板上方的沉积基板、设于所述下极板下方的基座、以及设于所述基座下方的支撑件;其中,所述支撑件、基座、下极板、及沉积基板之间通过数个螺纹柱以及分别套设于数个螺纹柱上且位于所述沉积基板上方的数个螺帽相连接;从而通过调节数个螺帽的高度即可实现所述下极板的不同位置及不同角度的倾斜,使得上、下极板之间的间距可调,在实际生产成膜过程中,可将膜厚比较大的地方间距调小,将膜厚比较小的地方间距调大,从而改变膜厚,对膜厚均匀性起到改善作用。 [0029] Advantageous effects of the invention: A chemical vapor deposition apparatus and methods of use provided by this invention, the chemical vapor deposition apparatus comprising opposite disposed on the lower plate, disposed above the lower plate of the deposition a substrate disposed below the lower base plate, and a support member disposed underneath said base; wherein said support by a plurality of pillars between the threaded member, base, bottom plate, and the deposition substrate respectively, and a plurality of threaded sleeve disposed in said column and a plurality of nuts connected deposited over a substrate; thereby can be realized in different positions and at different angles to the plate by adjusting the height of a plurality of inclined nut , so that the spacing between the lower plate is adjustable in the actual production process of the film formation, the film thickness may be adjusted where relatively large spacing is small, the film thickness is relatively small pitch transfer large areas, thereby changing the film thickness, play a role in improving the uniformity of film thickness.

附图说明 BRIEF DESCRIPTION

[0030]为了能更进一步了解本发明的特征以及技术内容,请参阅以下有关本发明的详细说明与附图,然而附图仅提供参考与说明用,并非用来对本发明加以限制。 [0030] To further understand features and technical contents of the present invention, please see the following detailed description and appended drawings of the present invention, but are provided solely for reference and illustration, not intended to limit the present invention.

[0031] 附图中, [0031] In the drawings,

[0032]图1为现有的一种化学气相沉积装置的结构示意图; [0032] FIG. 1 is a schematic structure of a conventional chemical vapor deposition apparatus;

[0033]图2为本发明的化学气相沉积装置的结构示意图; [0033] The structural diagram of a chemical vapor deposition apparatus of the present invention, FIG 2;

[0034]图3为本发明的化学气相沉积装置中上、下极板的间距调整后的效果示意图。 Chemical vapor deposition apparatus of the present invention, FIG 3 [0034], a schematic view of the effect of the pitch adjustment plate. 具体实施方式 detailed description

[0035]为更进一步阐述本发明所采取的技术手段及其效果,以下结合本发明的优选实施例及其附图进行详细描述。 [0035] To further elaborate the technical means adopted and effects of the present invention, the following in connection with preferred embodiments and embodiment of the present invention is described in detail with the accompanying drawings.

[0036]请参阅图2,本发明提供一种化学气相沉积装置,包括相对设置的上极板10与下极板20、设于所述下极板20上方的沉积基板30、设于所述下极板20下方的基座40、以及设于所述基座40下方的支撑件50; [0036] Referring to FIG. 2, the present invention provides a chemical vapor deposition apparatus, comprising a top plate 10 disposed opposite the lower plate 20, provided on the lower substrate 30 is deposited over the electrode plate 20, provided on the 20 under the lower base plate 40, and a support member provided in the base below 4050;

[0037]其中,所述基座40包括用于支撑所述下极板20的第一支撑板41、以及固定连接于所述第一支撑板41中央下方的支撑块42;所述支撑件50包括用于支撑所述基座40的第二支撑板51、以及固定连接于所述第二支撑板51中央下方的支撑柱52; [0037] wherein, the base 40 comprises a lower plate for supporting the first support plate 20 and 41, and is fixedly connected to the first support plate 41 beneath the central support block 42; 50 of the support member comprising a support for supporting the base plate 40 of the second 51, and is fixedly connected to the support column 51 below the center of the second support plate 52;

[0038]具体的,所述第二支撑板51与第一支撑板41、下极板20、及沉积基板30之间通过数个螺纹柱60以及分别套设于数个螺纹柱60上且位于所述沉积基板30上方的数个螺帽70相连接; [0038] Specifically, the second support plate 51 and the first support plate 41, between the lower plate 20, and the deposition substrate 30 by a plurality of threaded post 60 and are disposed on a plurality of sets of threaded post 60 and positioned is deposited over the substrate 30 is connected to a plurality of nuts 70;

[0039]具体的,所述数个螺纹柱60的底部分别与第二支撑板51固定连接,所述第一支撑板41、下极板20、及沉积基板30中分别设有数个第一、第二、第三通孔43、23、33,所述数个螺纹柱60穿过所述第一支撑板41、下极板20、及沉积基板30中的第一、第二、第三通孔43、23、33并延伸出去,数个螺帽70从所述沉积基板30的上方套设于数个螺纹柱60上,并且与螺纹柱60之间实现螺纹连接,从而通过调节数个螺帽70的高度即可实现所述下极板20的不同位置及不同角度的倾斜,使得上、下极板10、20之间的间距可调,对膜厚均匀性起到改善作用。 [0039] Specifically, the number of the threaded post 60 of the bottom 51 are fixedly connected to the second support plate, the first support plate 41, bottom plate 20, and the deposition substrate 30 are respectively provided with a plurality of first, second and third through holes 43,23,33, the number of thread 60 passes through the first support plate 41, bottom plate 20, and the substrate 30 is deposited a first, second, third through holes 43,23,33 and extending out from a plurality of nuts 70 is deposited over the substrate 30 sleeved on said plurality of threaded post 60 and threaded connection between the threaded post realized with 60, so that by adjusting the number of spiro the height of the cap 70 can be realized in different positions and at different angles of inclination of the plate 20, so that the upper and lower plates 10, 20 the spacing between the adjustable functions of the film thickness uniformity improvement.

[0040]如图2所示,在本发明提供的实施例中,所述支撑件50与基座40、下极板20、及沉积基板30之间通过两个螺纹柱60及两个螺帽70相连接,且所述两个螺纹柱60分别位于所述下极板20的左右两侧。 [0040] As shown, in the embodiment of the present invention provides, the support member 50 and the base 402 by two threaded post 60 between the bottom plate and two nuts 20, 30 and the deposition substrate 70 is connected, and the two threaded columns 60 are located at the right and left sides of the plate 20.

[0041 ]在化学气相沉积过程中,当下极板20左侧成膜的厚度要大于右侧成膜的厚度时,可以将下极板20左侧的螺帽70向上拧,将下极板20右侧的螺帽70向下拧,从而使得下极板20的左侧向上倾斜,右侧向下倾斜,实现如图3所示的效果,此时,左侧的上、下极板10、20的间距(spacing)变小,右侧的上、下极板10、20的间距(spac ing)变大,从而降低左侧的成膜速率及厚度,提高右侧的成膜速率及厚度,进而提高下极板20上成膜的均匀性。 When [0041] In a chemical vapor deposition process, the thickness of the lower electrode plate 20 forming the left side to the right side is greater than the thickness of the film formation, the nut 20 may be left in the bottom plate 70 is screwed up, the lower plate 20 the right side of the nut 70 screwed down, so that the lower plate 20 is a left side upward inclination, downward to the right, to achieve the effect shown in Figure 3, this time, on the left lower plate 10, pitch (spacing) 20 becomes smaller, on the right side, the lower plate spacing 10, 20 (spac ing) is increased, thereby reducing the deposition rate and the thickness of the left, to improve the film formation rate and the thickness of the right side, thus improving the uniformity of the deposition plate 20.

[0042]反之,当下极板20右侧成膜的厚度要大于左侧成膜的厚度时,可以将下极板20右侧的螺帽70向上拧,将下极板20左侧的螺帽70向下拧,从而使得下极板20的右侧向上倾斜,左侧向下倾斜,此时,右侧的上、下极板10、20的间距(spac ing)变小,左侧的上、下极板10、20的间距(spacing)变大,从而降低右侧的成膜速率及厚度,提高左侧的成膜速率及厚度,进而提高下极板20上成膜的均匀性。 When [0042] Conversely, the lower the thickness of the plates forming the right side 20 is greater than the thickness of the left side of the film formation, the nut 20 may be the right lower plate 70 is screwed up, the nut 20 on the left side of the lower plate 70 is screwed down, so that the lower plate 20 is inclined right upward, downward to the left, this time, on the right side, the lower plate spacing 10, 20 (spac ing) becomes smaller, on the left side of lower plate 10, 20 pitch (spacing) becomes large, thereby reducing the deposition rate and the thickness of the right, left to improve the film formation rate and thickness, thereby improving the uniformity of deposition on the lower plate 20.

[0043]同理,当螺纹柱60分布于下极板20的前后位置时,可以通过调整下极板20在前后方向的倾斜角度,从而调整下极板20前后方向的成膜均匀性。 [0043] Similarly, when the threaded post 60 located in front and rear positions of the lower plate 20, lower plate 20 by adjusting the inclination angle in the longitudinal direction so as to adjust the lower plate 20 and the deposition uniformity longitudinal direction. 具体的,所述螺纹柱60还可以均匀性分布于下极板20的其它位置,通过调整不同位置的螺帽70的高度来调整下极板20上成膜的均匀性。 Specifically, the threaded post 60 also may be uniformly distributed in the other positions of the lower plate 20 by adjusting the height of the nut 70 at different positions to adjust the uniformity of deposition on the plate 20.

[0044]具体的,所述上、下极板10、20为两块上下平行的电极,其中,所述上极板10与射频电源11相连,所述下极板20接地。 [0044] Specifically, the upper and lower plates 10, 20 of two vertical parallel electrodes, wherein the upper plate 10 and RF power source 11 is connected to the ground pad 20.

[0045]具体的,所述沉积基板30为反应气体沉积成膜的衬底基板,优选的,所述沉积基板30为玻璃基板。 [0045] Specifically, the deposition substrate 30 is a base substrate of the reaction gas is deposited in a film, preferably, the deposition substrate 30 is a glass substrate.

[0046]具体的,所述第一支撑板41与第二支撑板51可以为圆形、三角形或其它形状的基板。 [0046] Specifically, the first support plate 41 and the second support plate 51 may be circular, triangular or other shaped substrate.

[0047]具体的,所述基座40通过传动装置连接到步进马达,以步进方式升降下极板20。 [0047] Specifically, the base 40 is connected to the stepping motor via a transmission, in a stepwise manner at the lifting plate 20.

[0048]具体的,所述化学气相沉积装置还包括腔室本体90,所述上极板10、下极板20、沉积基板30、基座40均位于所述腔室本体90内部,所述支撑件50的第二支撑板51位于所述腔室本体90内部,所述支撑件50的支撑柱52的上部位于所述腔室本体90内部,下部从所述腔室本体90穿出,位于所述腔室本体90外部。 [0048] Specifically, the chemical vapor deposition apparatus further comprises a chamber body 90, the upper plate 10, lower plate 20, the deposition substrate 30, the base 40 are located inside the chamber body 90, the support member 50 of the second support plate 51 is located inside the chamber body 90, the upper support member 52 of the support column 50 located on the interior of the chamber body 90, a lower portion of the chamber from the piercing body 90, it is located the outer chamber body 90.

[0049]具体的,所述腔室本体90上设有用来向腔室本体90内部通入反应气体的进气孔91ο [0049] Specifically, the chamber is provided with inlet port to the interior of the chamber body 90 into the reaction gas, the body 90 91ο

[0050]具体的,所述支撑柱52外设有水平方向限位套80,所述水平方向限位套80位于所述腔室本体90的外部,且通过连接机构固定于墙壁或其它物体上,当所述基座40在步进马达的带动下上下运动时,由于基座40与支撑件50通过螺纹柱60与螺帽70连接,从而支撑件50也会随基座40上下运动,此时,所述水平方向限位套80对所述支撑柱52起到水平方向限位的作用。 [0050] Specifically, the support column 52 outside the stopper sleeve 80 in the horizontal direction, the horizontal direction of the stopper sleeve 80 positioned outside the chamber body 90, and is secured by connecting means to a wall or other object , when the vertical movement of the base 40 driven by the stepping motor, since the base 50 is connected to the support member 40 through the threaded post 60 and the nut 70, so that the support member 50 will be moved up and down with the base 40, this when the horizontal direction, the stopper collar 80 supporting column 52 plays the role of limiting the horizontal direction.

[0051]请参阅图2-3,本发明还提供一种化学气相沉积装置的使用方法,包括如下步骤: [0051] Referring to FIG 2-3, the present invention also provides a method of using a chemical vapor deposition apparatus, comprising the steps of:

[0052]步骤1、如图2所示,提供一化学气相沉积装置,其包括相对设置的上极板10与下极板20、设于所述下极板20上方的沉积基板30、设于所述下极板20下方的基座40、以及设于所述基座40下方的支撑件50; [0052] Step 1 and 2, there is provided a chemical vapor deposition apparatus, which includes an upper plate 10 disposed opposite the lower plate 20, provided on the lower substrate 30 is deposited over the electrode plate 20, provided below the lower base plate 2040, and a support member provided in the base below 4050;

[0053]其中,所述基座40包括用于支撑所述下极板20的第一支撑板41、以及固定连接于所述第一支撑板41中央下方的支撑块42;所述支撑件50包括用于支撑所述基座40的第二支撑板51、以及固定连接于所述第二支撑板51中央下方的支撑柱52; [0053] wherein, the base 40 comprises a lower plate for supporting the first support plate 20 and 41, and is fixedly connected to the first support plate 41 beneath the central support block 42; 50 of the support member comprising a support for supporting the base plate 40 of the second 51, and is fixedly connected to the support column 51 below the center of the second support plate 52;

[0054]所述第二支撑板51与第一支撑板41、下极板20、及沉积基板30之间通过数个螺纹柱60以及分别套设于数个螺纹柱60上且位于所述沉积基板30上方的数个螺帽70相连接; [0054] The second support plate 51 and the first support plate 41, between the lower plate 20, the deposition and the deposition substrate 30 by a plurality of threaded post 60 and, situated respectively sleeved on the threaded post 60 of several a plurality of nuts over the substrate 3070 is connected;

[0055]所述数个螺纹柱60的底部分别与第二支撑板51固定连接,所述第一支撑板41、下极板20、及沉积基板30中分别设有数个第一、第二、第三通孔43、23、33,所述数个螺纹柱60穿过所述第一支撑板41、下极板20、及沉积基板30中的第一、第二、第三通孔43、23、33并延伸出去,数个螺帽70从所述沉积基板30的上方套设于数个螺纹柱60上,并且与螺纹柱60之间实现螺纹连接; [0055] The number of the bottom of the threaded post 60 and the second support plate 51 are fixedly connected to the first support plate 41, bottom plate 20, and the deposition substrate 30 are respectively provided with a plurality of first, second, 43,23,33 third through hole, said plurality of threaded post 60 through the first support plate 41, a first, second, third through holes 4320, and the deposition substrate 30 in the lower plate, 23, 33 and extending out from a plurality of nuts 70 is deposited over the substrate 30 sleeved on said plurality of threaded post 60 and threaded connection between the implement 60 and the threaded post;

[0056]所述化学气相沉积装置还包括腔室本体90,所述上极板10、下极板20、沉积基板30、基座40均位于所述腔室本体90内部,所述支撑件50的第二支撑板51位于所述腔室本体90内部,所述支撑件50的支撑柱52的上部位于所述腔室本体90内部,下部从所述腔室本体90穿出,位于所述腔室本体90外部;所述腔室本体90上设有用来向腔室本体90内部通入反应气体的进气孔91; [0056] The chemical vapor deposition apparatus further comprises a chamber body 90, the upper plate 10, lower plate 20, the deposition substrate 30, the base 40 are located inside the chamber body 90, the support member 50 a second support plate 51 is located inside the chamber body 90, the upper support member 50 of the support column 52 located on the interior of the chamber body 90, a lower portion of the chamber from the piercing body 90, located in the cavity the outer chamber body 90; the chamber to the chamber provided inside the main body 90 into the reaction gas inlet hole 91 of the body 90;

[0057] 步骤2、通过进气孔91向腔室本体90内部通入反应气体,射频电源11通过上极板10向腔室本体90内部提供能量,下极板20作为下电极直接接地,从而在上极板10和下极板20之间产生射频电场,将反应气体激发成等离子体,进而对放置于下极板20上的沉积基板30进行镀膜; [0057] Step 2, through the inlet 90 into the through hole 91 of the body inner chamber of the reaction gas, the RF power source 11 supplies energy to the interior of the chamber body 90 through upper plate 10, lower plate 20 as a lower electrode directly to ground, radio frequency electric field is generated between the upper plate 10 and lower plate 20, the reaction gas is excited into a plasma, and then deposited on the substrate 30 at the plate 20 be coated is placed;

[0058]步骤3、如图3所示,当所述步骤2中出现下极板20上不同位置的成膜厚度不一的情况时,停止沉积制程,打开腔室本体90,通过调节不同位置的螺纹柱60上的螺帽70的高度,调节不同位置的上、下极板10、20之间的间距,将膜厚比较大的地方间距调小,将膜厚比较小的地方间距调大,从而改变膜厚,起到改善膜厚均匀性的作用。 [0058] Step 3, shown in Figure 3, the case when the film thickness of the different positions of the lower plate 20 occurs in step 2 of varying, stopping the deposition process, the chamber body 90 is opened, by adjusting the different positions the height of the nut 70 on the threaded post 60, different positions of adjustment, the spacing between the plates 10 and 20, where relatively large thickness of the transfer of small pitch, where a relatively small film thickness pitch transfer large , thereby changing the film thickness, play a role in improving the uniformity of the film thickness.

[0059]优选的,所述化学气相沉积装置中,所述支撑件50与基座40、下极板20、及沉积基板30之间通过两个螺纹柱60及两个螺帽70相连接,且所述两个螺纹柱60分别位于所述下极板20的左右两侧。 [0059] Preferably, the chemical vapor deposition apparatus, the support member 50 and the base 40, connected by two threaded post 60 and the nut 70 between the two plates 20, 30 and the deposition substrate, and the two threaded columns 60 are located at the right and left sides of the plate 20.

[0060]在步骤2中,当下极板20左侧成膜的厚度要大于右侧成膜的厚度时,所述步骤3中,通过将下极板20左侧的螺帽70向上拧,将下极板20右侧的螺帽70向下拧,从而使得下极板20的左侧向上倾斜,右侧向下倾斜,实现如图3所示的效果,此时,左侧的上、下极板10、20的间距(spacing)变小,右侧的上、下极板10、20的间距(spac ing)变大,从而降低左侧的成膜速率及厚度,提高右侧的成膜速率及厚度,进而提高下极板20上成膜的均匀性。 When [0060] In Step 2, the thickness of the lower electrode plate 20 forming the left side to the right side is greater than the thickness of the film formation, in the step 3, the left side of the lower plate 20 the nut 70 is screwed up, the the right side of the nut 20 is screwed down the lower plate 70, so that the lower plate 20 is a left side upward inclination, downward to the right, to achieve the effect shown in Figure 3, at this time, the left upper and lower plates 10 and 20 pitch (spacing) is small, on the right side, the lower plate spacing 10, 20 (spac ing) is increased, thereby reducing the film forming rate and the thickness of the left side, the right improve the film rate and thickness, thereby improving the uniformity of deposition on the lower plate 20.

[0061]在步骤2中,当下极板20右侧成膜的厚度要大于左侧成膜的厚度时,所述步骤3中,通过将下极板20右侧的螺帽70向上拧,将下极板20左侧的螺帽70向下拧,从而使得下极板20的右侧向上倾斜,左侧向下倾斜,此时,右侧的上、下极板10、20的间距(spac ing)变小,左侧的上、下极板10、20的间距(spacing)变大,从而降低右侧的成膜速率及厚度,提高左侧的成膜速率及厚度,进而提高下极板20上成膜的均匀性。 When [0061] In Step 2, the thickness of the lower electrode plate 20 forming the right to the left is larger than the thickness of the film formation, in the step 3, the right side of the lower plate 20 the nut 70 is screwed up, the the left side plate 20 of the nut 70 screwed down, so that the lower plate 20 is inclined right upward, downward to the left, this time, on the right side of the lower plate 10, 20 pitches (SPAC ing) becomes small, on the left side of the lower plate 10, 20 pitch (spacing) becomes large, thereby reducing the deposition rate and the thickness of the right side, to improve the film formation rate and the thickness of the left, thereby increasing the lower plate 20 on film uniformity.

[0062]综上所述,本发明提供的一种化学气相沉积装置及其使用方法,所述化学气相沉积装置包括相对设置的上、下极板、设于所述下极板上方的沉积基板、设于所述下极板下方的基座、以及设于所述基座下方的支撑件;其中,所述支撑件、基座、下极板、及沉积基板之间通过数个螺纹柱以及分别套设于数个螺纹柱上且位于所述沉积基板上方的数个螺帽相连接;从而通过调节数个螺帽的高度即可实现所述下极板的不同位置及不同角度的倾斜,使得上、下极板之间的间距可调,在实际生产成膜过程中,可将膜厚比较大的地方间距调小,将膜厚比较小的地方间距调大,从而改变膜厚,对膜厚均匀性起到改善作用。 [0062] In summary, a chemical vapor deposition apparatus and methods of use provided by this invention, the chemical vapor deposition apparatus comprising opposite disposed on the lower plate, the lower the deposition substrate disposed above the plate , is provided below the lower base plate, and a support member disposed underneath said base; wherein between said support member, base, bottom plate, and the deposition substrate by a plurality of threaded post and respectively fit in a plurality of threads in said cartridge and depositing over a substrate a plurality of nuts connected; thereby can be realized in different positions and at different angles of inclination of the lower plate by a plurality of adjusting the height of the nut, such that the spacing between the lower plate is adjustable in the actual production process of the film formation, the film thickness may be adjusted where relatively large spacing is small, the film thickness is relatively small pitch transfer large areas, thereby changing the film thickness of play a role in improving the film thickness uniformity.

[0063]以上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。 [0063] The above, those of ordinary skill in the art, can make various corresponding modifications and other variations according to the technical idea and the technical solutions of the present invention, and all such changes and modifications shall belong to the present invention is attached the scope of the claims.

Claims (10)

  1. 1.一种化学气相沉积装置,其特征在于,包括相对设置的上极板(10)与下极板(20)、设于所述下极板(20)上方的沉积基板(30)、设于所述下极板(20)下方的基座(40)、以及设于所述基座(40)下方的支撑件(50); 其中,所述基座(40)包括用于支撑所述下极板(20)的第一支撑板(41)、以及固定连接于所述第一支撑板(41)中央下方的支撑块(42);所述支撑件(50)包括用于支撑所述基座(40)的第二支撑板(51)、以及固定连接于所述第二支撑板(51)中央下方的支撑柱(52); 所述第二支撑板(51)与第一支撑板(41)、下极板(20)、及沉积基板(30)之间通过数个螺纹柱(60)以及分别套设于数个螺纹柱(60)上且位于所述沉积基板(30)上方的数个螺帽(70)相连接; 所述数个螺纹柱(60)的底部分别与第二支撑板(51)固定连接,所述第一支撑板(41)、下极板(20)、及沉积基板(30)中分别设有数个第一、第二、第三通孔(43、2 1. A chemical vapor deposition apparatus, characterized by comprising a plate (10) disposed opposite to the lower plate (20), disposed on said lower plate (20) the deposition substrate (30) above, provided to the lower plate (20) below the base (40), and provided in the base (40) beneath the support member (50); wherein the base (40) comprises means for supporting the bottom plate (20) of the first support plate (41), and fixedly connected to said first support plate (41) beneath the central support block (42); said support member (50) comprises means for supporting the the base (40) of the second support plate (51), and fixedly attached to the second support plate (51) beneath the central support column (52); the second support plate (51) with the first support plate between (41), the plate (20), and a deposition substrate (30) through a plurality of threaded post (60) and are disposed in a plurality of sets of threaded post (60) and located above the deposition substrate (30) a plurality of nuts (70) are connected; bottom of the plurality of threaded post (60) are fixedly connected to the second support plate (51), the first support plate (41), the plate (20) , and the deposition substrate (30) are respectively provided with a plurality of first, second, third through holes (43,2 3、33),所述数个螺纹柱(60)穿过所述第一支撑板(41)、下极板(20)、及沉积基板(30)中的第一、第二、第三通孔(43、23、33)并延伸出去,数个螺帽(70)从所述沉积基板(30)的上方套设于数个螺纹柱(60)上,并且与螺纹柱(60)之间实现螺纹连接,从而通过调节数个螺帽(70)的高度即可实现所述下极板(20)的不同位置及不同角度的倾斜,使得上、下极板(10、20)之间的间距可调。 3,33), said plurality of threaded post (60) through the first, second, third through the first support plate (41), the plate (20), and a deposition substrate (30) holes (43,23,33) and extending out a number of nuts (70) from above the deposition substrate (30) is provided in a plurality of sets of threaded post (60), and between the threaded post (60) to achieve a threaded connection, so that a number can be achieved by adjusting the height of the nut (70) at the different positions and different angles of inclination of the plate (20), such that the upper and lower plates (10, 20) between the adjustable spacing.
  2. 2.如权利要求1所述的化学气相沉积装置,其特征在于,所述支撑件(50)与基座(40)、下极板(20)、及沉积基板(30)之间通过两个螺纹柱(60)及两个螺帽(70)相连接,且所述两个螺纹柱(60)分别位于所述下极板(20)的左右两侧。 2. The chemical vapor deposition apparatus according to claim 1, characterized in that the member (50) and the base (40) of the support, between the lower plate (20), and a deposition substrate (30) by two threaded post (60) and two nuts (70) are connected, and the two threaded columns (60) are located on right and left sides of the lower plate (20).
  3. 3.如权利要求1所述的化学气相沉积装置,其特征在于,所述上、下极板(10、20)为两块上下平行的电极,其中,所述上极板(10)与射频电源(11)相连,所述下极板(20)接地。 3. The chemical vapor deposition apparatus according to claim 1, wherein said upper and lower plates (10, 20) of two vertical parallel electrodes, wherein the top plate (10) and RF power supply (11), said lower plate (20) is grounded.
  4. 4.如权利要求1所述的化学气相沉积装置,其特征在于,所述沉积基板(30)为玻璃基板。 The chemical vapor deposition apparatus as claimed in claim 1, wherein said deposition substrate (30) is a glass substrate.
  5. 5.如权利要求1所述的化学气相沉积装置,其特征在于,所述第一支撑板(41)与第二支撑板(51)为圆形或三角形基板。 5. The chemical vapor deposition apparatus according to claim 1, wherein the first support plate (41) and the second support plate (51) is circular or triangular substrate.
  6. 6.如权利要求1所述的化学气相沉积装置,其特征在于,所述基座(40)通过传动装置连接到步进马达,以步进方式升降下极板(20)。 6. The chemical vapor deposition apparatus according to claim 1, characterized in that the base (40) is connected to the stepping motor via a transmission, in a stepwise manner at the lifting plate (20).
  7. 7.如权利要求1所述的化学气相沉积装置,其特征在于,所述化学气相沉积装置还包括腔室本体(90),所述上极板(10)、下极板(20)、沉积基板(30)、基座(40)均位于所述腔室本体(90)内部,所述支撑件(50)的第二支撑板(51)位于所述腔室本体(90)内部,所述支撑件(50)的支撑柱(52)的上部位于所述腔室本体(90)内部,下部从所述腔室本体(90)穿出,位于所述腔室本体(90)外部;所述腔室本体(90)上设有用来向腔室本体(90)内部通入反应气体的进气孔(91)。 7. The chemical vapor deposition apparatus according to claim 1, wherein said chemical vapor deposition apparatus further comprises a chamber body (90), said upper plate (10), the plate (20) is deposited a substrate (30), the base (40) are located in said chamber body (90) inside said support member (50) of the second support plate (51) located in said chamber body (90) inside the the upper support member (50) of the support column (52) located in said chamber body (90) inside the lower chamber from the body (90) piercing, located in said chamber body (90) outside; the It is provided on the chamber body (90) to the chamber body (90) into the interior of the reaction gas inlet holes (91).
  8. 8.如权利要求7所述的化学气相沉积装置,其特征在于,所述支撑柱(52)外设有水平方向限位套(80),所述水平方向限位套(80)位于所述腔室本体(90)的外部,且通过连接机构固定于墙壁上。 8. The chemical vapor deposition apparatus according to claim 7, wherein said support column (52) in the horizontal direction outside the stopper sleeve (80), the horizontal stopper sleeve (80) located chamber body (90) outside of and is fixed to the wall by a connecting means.
  9. 9.一种化学气相沉积装置的使用方法,其特征在于,包括如下步骤: 步骤1、提供一化学气相沉积装置,其包括相对设置的上极板(10)与下极板(20)、设于所述下极板(20)上方的沉积基板(30)、设于所述下极板(20)下方的基座(40)、以及设于所述基座(40)下方的支撑件(50); 其中,所述基座(40)包括用于支撑所述下极板(20)的第一支撑板(41)、以及固定连接于所述第一支撑板(41)中央下方的支撑块(42);所述支撑件(50)包括用于支撑所述基座(40)的第二支撑板(51)、以及固定连接于所述第二支撑板(51)中央下方的支撑柱(52); 所述第二支撑板(51)与第一支撑板(41)、下极板(20)、及沉积基板(30)之间通过数个螺纹柱(60)以及分别套设于数个螺纹柱(60)上且位于所述沉积基板(30)上方的数个螺帽(70)相连接; 所述数个螺纹柱(60)的底部分别与第二支撑板(51)固定连接,所述第一支撑板(41)、下极板 9. A method of using a chemical vapor deposition apparatus, characterized by comprising the following steps: Step 1, there is provided a chemical vapor deposition apparatus, which includes an upper plate (10) disposed opposite to the lower plate (20), provided to the lower plate (20) the deposition substrate (30) above, provided in the lower plate (20) below the base (40), and provided in the base (40) below the support ( 50); wherein the base (40) comprises a plate for supporting the lower (20) a first support plate (41), and fixedly connected to the support beneath a center of said first support plate (41) block (42); said support member (50) includes a second support plate (51) for supporting the base (40), and fixedly connected to the second support plate (51) beneath the central support column (52); the second support plate (51) with the first support plate (41), (20), and a deposition substrate (30) the plate through a plurality of threaded post (60) and respectively sleeved a plurality of threaded post (60) located in said deposition substrate (30) over the plurality of nuts (70) are connected; bottom of the plurality of threaded post (60) are fixed to the second support plate (51) connecting the first support plate (41), the lower plate (20)、及沉积基板(30)中分别设有数个第一、第二、第三通孔(43、23、33),所述数个螺纹柱(60)穿过所述第一支撑板(41)、下极板(20)、及沉积基板(30)中的第一、第二、第三通孔(43、23、33)并延伸出去,数个螺帽(70)从所述沉积基板(30)的上方套设于数个螺纹柱(60)上,并且与螺纹柱(60)之间实现螺纹连接; 所述化学气相沉积装置还包括腔室本体(90),所述上极板(10)、下极板(20)、沉积基板(30)、基座(40)均位于所述腔室本体(90)内部,所述支撑件(50)的第二支撑板(51)位于所述腔室本体(90)内部,所述支撑件(50)的支撑柱(52)的上部位于所述腔室本体(90)内部,下部从所述腔室本体(90)穿出,位于所述腔室本体(90)外部;所述腔室本体(90)上设有用来向腔室本体(90)内部通入反应气体的进气孔(91); 步骤2、通过进气孔(91)向腔室本体(90)内部通入反应气体,射频电源(11)通过上极板(10)向 (20), and a deposition substrate (30) are respectively provided with a plurality of first, second, third through holes (43,23,33), said plurality of threaded post (60) through the first support plate (41), the plate (20), and the substrate is deposited a first, second, third through holes (43,23,33) (30) and extending out a number of nuts (70) from the above the deposition substrate (30) is provided in a plurality of sets of threaded post (60), and to achieve a threaded connection between the threaded post (60); the apparatus further comprises a chemical vapor deposition chamber body (90), said upper plate (10), the plate (20), the deposition substrate (30), the base (40) are located in said chamber body (90) inside the support (50) a second support plate (51 ) located in said chamber body (90) inside an upper portion of said support member (50) of the support column (52) located in said chamber body (90) inside the lower portion (90) from said chamber body piercing , located in said chamber body (90) externally; the air inlet vent for the chamber body (90) into the interior of the reaction gas (91) to said chamber body (90); step 2, through the intake hole (91) through the interior of the reaction gas, the RF power supply (11) to the chamber body (90) through the upper plate (10) to 腔室本体(90)内部提供能量,下极板(20)作为下电极直接接地,从而在上极板(10)和下极板(20)之间产生射频电场,将反应气体激发成等离子体,进而对放置于下极板(20)上的沉积基板(30)进行镀膜; 步骤3、当所述步骤2中出现下极板(20)上不同位置的成膜厚度不一的情况时,停止沉积制程,打开腔室本体(90),通过调节不同位置的螺纹柱(60)上的螺帽(70)的高度,调节不同位置的上、下极板(10、20)之间的间距,将膜厚比较大的地方间距调小,将膜厚比较小的地方间距调大,从而改变膜厚,起到改善膜厚均匀性的作用。 Chamber body (90) provided inside the energy (20) directly grounded lower plate as a lower electrode, thereby generating a radio frequency electric field between the upper plate (10) and a lower plate (20), and the reaction gas is excited into a plasma , the deposition substrate (30) placed on the lower plate of the turn (20) for plating; step 3, where the film thickness varies at different locations when the lower plate 2 occurs in step (20), the deposition process is stopped, opens the chamber body (90) by adjusting nut threaded post on the different positions (60) height (70), different positions of adjustment, the distance between the bottom plate (10, 20) , where relatively large thickness of the transfer of small pitch, where a relatively small film thickness pitches transfer large, thereby changing the film thickness, play a role in improving the uniformity of the film thickness.
  10. 10.如权利要求9所述的化学气相沉积装置的使用方法,其特征在于,所述化学气相沉积装置中,所述支撑件(50)与基座(40)、下极板(20)、及沉积基板(30)之间通过两个螺纹柱(60)及两个螺帽(70)相连接,且所述两个螺纹柱(60)分别位于所述下极板(20)的左右两侧; 在步骤2中,当下极板(20)左侧成膜的厚度要大于右侧成膜的厚度时,所述步骤3中,通过将下极板(20)左侧的螺帽(70)向上拧,将下极板(20)右侧的螺帽(70)向下拧,从而使得下极板(20)的左侧向上倾斜,右侧向下倾斜,此时,左侧的上、下极板(10、20)的间距变小,右侧的上、下极板(10、20)的间距变大,从而降低左侧的成膜速率及厚度,提高右侧的成膜速率及厚度,进而提高下极板(20)上成膜的均匀性; 在步骤2中,当下极板(20)右侧成膜的厚度要大于左侧成膜的厚度时,所述步骤3中,通过将下极板(20)右侧的螺 The method of using a chemical vapor deposition apparatus as claimed in claim 9, wherein said chemical vapor deposition apparatus, said support member (50) and the base (40), the plate (20), and connected between the deposition substrate (30) by two threaded post (60) and two nuts (70), and the two threaded columns (60) are located in said lower plate (20) about two side; in step 2, the lower plate (20) to a thickness greater than the thickness of the left side of the right side of the deposition film formation, in the step 3, the nut (20) on the left side of the lower plate (70 , on the left side) is screwed up, the lower plate (20) on the right side of the nut (70) screwed down, so that the lower plate (20) is a left side upward inclination, downward to the right, then lower plate (10, 20) of the pitch becomes small, on the right side of the lower plate (10, 20) spacing is increased, thereby reducing the deposition rate and the thickness of the left side, the right to improve the film formation rate and thickness, thereby increasing the lower plate (20) on the uniformity of deposition; in step 2, when the lower plate (20) to a thickness greater than the thickness of the right side of the left side of the deposition film formation, the step 3 by the lower plate (20) to the right of spiro (70)向上拧,将下极板(20)左侧的螺帽(70)向下拧,从而使得下极板(20)的右侧向上倾斜,左侧向下倾斜,此时,右侧的上、下极板(10、20)的间距变小,左侧的上、下极板(10、20)的间距变大,从而降低右侧的成膜速率及厚度,提高左侧的成膜速率及厚度,进而提高下极板(20)上成膜的均匀性。 (70) is screwed up, the nut (20) on the left side of the bottom plate (70) is screwed down, so that the lower plate (20) is inclined right upward, downward to the left, this time, the right upper and lower plates (10, 20) of the pitch becomes small, on the left side of the lower plate (10, 20) spacing is increased, thereby reducing the deposition rate and the thickness of the right, left to increase the and film thickness rate, thereby increasing (20) the uniformity of deposition on the lower plate.
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