CN105483652A - Chemical vapor deposition device and use method thereof - Google Patents
Chemical vapor deposition device and use method thereof Download PDFInfo
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- CN105483652A CN105483652A CN201510898023.3A CN201510898023A CN105483652A CN 105483652 A CN105483652 A CN 105483652A CN 201510898023 A CN201510898023 A CN 201510898023A CN 105483652 A CN105483652 A CN 105483652A
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- bottom crown
- pad
- crown
- chamber body
- threaded post
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Abstract
The invention provides a chemical vapor deposition device and a use method thereof. The chemical vapor deposition device comprises an upper pole plate, a lower pole plate, a deposition base plate, a base and a supporting part, wherein the upper pole plate and the lower pole plate are oppositely arranged, the deposition base plate is arranged on the lower pole plate, the base is arranged under the lower pole plate, and the supporting part is arranged under the base; the supporting part, the base, the lower pole plate and the deposition base plate are connected through a plurality of threaded columns and a plurality of nuts arranged on the threaded columns in a sleeving mode and located on the deposition base plate; the lower pole plate can be inclined to different positions and by different angles by adjusting the height of the nuts, and therefore the distance between the upper pole plate and the lower pole plate can be adjusted; in the actual production and film formation process, the distance of the parts large in film thickness can be reduced, the distance of the parts small in film thickness can be increased, and therefore the film thickness can be changed, and the uniformity of the film thickness can be improved.
Description
Technical field
The present invention relates to chemical vapour deposition technique field, particularly relate to a kind of chemical vapor deposition unit and using method thereof.
Background technology
Chemical vapour deposition (CVD, ChemicalVaporDeposition) be a kind of method of vapor-phase growing preparing thin-film material, it one or more is contained the compound, the elementary gas that form film element pass into the reaction chamber being placed with base material, by the Technology of space gas-phase chemical reaction depositing solid films on matrix surface.The reaction mechanism of chemical vapour deposition is: imported by reactant gases in reactor, dissociate under the effect of heat energy, electric energy or luminous energy and become active extremely strong ion or ionic group (plasma), described ion or ionic group arrive solid substrate surface by diffusion way and chemical reaction generation solid product occur and is deposited on substrate surface.
As shown in Figure 1, for existing a kind of chemical vapor deposition unit, it comprises processing procedure chamber 100, to be located in processing procedure chamber 100 and the top crown be oppositely arranged (Diffuser) 200 and bottom crown (Susceptor) 300, and to be located in processing procedure chamber 100 and the glass substrate 400 be located at above described bottom crown 300, wherein, described processing procedure chamber 100 is reacting environment of CVD film forming, gas ionizes in processing procedure chamber 100, part or all of dissociating and form energetic atom, negative ions, the mixture of electronics and gas molecule, arrive substrate surface generation chemical reaction and be deposited on glass substrate 400, described top crown 200 can arrive glass substrate 400 surface uniformly for allowing reactant gases, thus improves the homogeneity of film forming, described bottom crown 300 provides a parallelism well heavy film platform and provide the process temperatures needed for reaction to glass substrate 400 to glass substrate 400.
For chemical vapour deposition, spacing (spacing) between top crown 200 and bottom crown 300 is the important technical parameter of CVD film forming, it affects the distribution of ionic group (plasma), thus the sedimentation rate affecting rete with become film uniformity.Within the specific limits, when spacing increases, the thickness of film forming also increases.But, if spacing is too large, greatly affects deposition speed, and cause particle (particle) problem, then can have a strong impact on quality of forming film.If spacing is too little, be directly sprayed onto glass substrate 400 from nozzle (Showhead) blast air out, blast air directly impacts glass substrate 400 surface, and ion may have little time deposit and just be taken away by blast air, this reduces rate of film build.So in suitable scope, the spacing size of adjustment top crown 200 and bottom crown 300, can the thickness of corresponding change film forming.
In actual production, the thickness of both sides, processing procedure chamber 100 there are differences.In the processing procedure cavity configuration shown in Fig. 1, the dry pump (DryPump) 500 on the left of processing procedure chamber 100 has the effect of bleeding, and causes two sidewinds in chamber asymmetric, and the current density namely on the left of chamber is greater than the current density on right side.Moreover vacuum valve (SlitValve) 600 place on the left of processing procedure chamber 100 has sulculus, causes ionic group (plasma) higher at this aggregation extent.Comprehensive above 2 points, on the left of processing procedure chamber 100, the thickness of film forming is greater than the thickness of right side film forming, uses existing chemical vapor deposition unit can cause the uneven of film forming.
Summary of the invention
The object of the present invention is to provide a kind of chemical vapor deposition unit, can according to the spacing size between the upper and lower pole plate of the degree of uniformity adjustment different positions of film forming in the process used, local spacing larger for Film Thickness Ratio is turned down, local spacing smaller for thickness is tuned up, thus change thickness, film uniformity is played a role in improving.
The present invention also aims to the using method that a kind of chemical vapor deposition unit is provided, by regulating the height of the nut in the threaded post of different positions in chemical vapor deposition unit, spacing between the upper and lower pole plate of adjustment different positions, local spacing larger for Film Thickness Ratio is turned down, local spacing smaller for thickness is tuned up, thus change thickness, play the effect improving film uniformity.
For achieving the above object, the strut member that the invention provides a kind of chemical vapor deposition unit, comprise the top crown that is oppositely arranged and bottom crown, be located at deposition substrate above described bottom crown, be located at the pedestal below described bottom crown and be located at below described pedestal;
Wherein, described pedestal comprises the first back up pad for supporting described bottom crown and is fixedly connected on the back-up block below described first back up pad central authorities; Described strut member comprises the second back up pad for supporting described pedestal and is fixedly connected on the pillar stiffener below described second back up pad central authorities;
Described second back up pad with between the first back up pad, bottom crown and deposition substrate by several threaded post and to be sheathed on respectively in several threaded post and the several nuts be positioned at above described deposition substrate are connected;
The bottom of described several threaded post is fixedly connected with the second back up pad respectively, described first back up pad, bottom crown, and in deposition substrate, be respectively equipped with several first, second, third through-hole, described several threaded post is through described first back up pad, bottom crown, and first in deposition substrate, second, third through-hole also extends out, several nut is sheathed on several threaded post from the top of described deposition substrate, and with realize between threaded post being threaded, thus by regulating the height of several nut can realize the different positions of described bottom crown and the inclination of different angles, make, spacing between bottom crown is adjustable.
Described strut member is connected by two threaded post and two nuts with between pedestal, bottom crown and deposition substrate, and described two threaded post lay respectively at the left and right sides of described bottom crown.
Described upper and lower pole plate is about two pieces parallel electrodes, and wherein, described top crown is connected with radio-frequency power supply, described bottom crown ground connection.
Described deposition substrate is glass substrate.
Described first back up pad and the second back up pad are circular or trilateral substrate.
Described pedestal is connected to step motor by transmission mechanism, is elevated bottom crown in a stepwise manner.
Described chemical vapor deposition unit also comprises chamber body, it is inner that described top crown, bottom crown, deposition substrate, pedestal are all positioned at described chamber body, second back up pad of described strut member is positioned at described chamber body inside, the top of the pillar stiffener of described strut member is positioned at described chamber body inside, bottom passes from described chamber body, is positioned at described chamber body outside; Described chamber body is provided with the air inlet port for passing into reactant gases to chamber body inside.
Be provided with horizontal direction stop collar outside described pillar stiffener, described horizontal direction stop collar is positioned at the outside of described chamber body, and is fixed on wall by connection mechanism.
The present invention also provides a kind of using method of chemical vapor deposition unit, comprises the steps:
Strut member step 1, providing a chemical vapor deposition unit, it comprises the top crown that is oppositely arranged and bottom crown, be located at deposition substrate above described bottom crown, be located at the pedestal below described bottom crown and be located at below described pedestal;
Wherein, described pedestal comprises the first back up pad for supporting described bottom crown and is fixedly connected on the back-up block below described first back up pad central authorities; Described strut member comprises the second back up pad for supporting described pedestal and is fixedly connected on the pillar stiffener below described second back up pad central authorities;
Described second back up pad with between the first back up pad, bottom crown and deposition substrate by several threaded post and to be sheathed on respectively in several threaded post and the several nuts be positioned at above described deposition substrate are connected;
The bottom of described several threaded post is fixedly connected with the second back up pad respectively, several first, second, third through hole is respectively equipped with in described first back up pad, bottom crown and deposition substrate, described several threaded post is passed first, second, third through hole in described first back up pad, bottom crown and deposition substrate and is extended out, several nut is sheathed on several threaded post from the top of described deposition substrate, and with realize between threaded post being threaded; Described chamber body is provided with the air inlet port for passing into reactant gases to chamber body inside;
Step 2, pass into reactant gases by air inlet port to chamber body inside, radio-frequency power supply provides energy by top crown to chamber body inside, bottom crown is as the direct ground connection of lower electrode, thus rf electric field is produced between top crown and bottom crown, reactant gases is excited into plasma body, and then plated film is carried out to the deposition substrate be positioned on bottom crown;
Step 3, when there is the situation that the film forming thickness of different positions on bottom crown differs in described step 2, stop deposition manufacture process, open chamber body, by regulating the height of the nut in the threaded post of different positions, spacing between the upper and lower pole plate of adjustment different positions, turns down local spacing larger for Film Thickness Ratio, local spacing smaller for thickness is tuned up, thus change thickness, play the effect improving film uniformity.
In described chemical vapor deposition unit, described strut member is connected by two threaded post and two nuts with between pedestal, bottom crown and deposition substrate, and described two threaded post lay respectively at the left and right sides of described bottom crown;
In step 2, when the thickness of film forming on the left of bottom crown is greater than the thickness of right side film forming, in described step 3, by the nut on the left of bottom crown is upwards twisted, nut on the right side of bottom crown is twisted downwards, thus the left side of bottom crown is inclined upwardly, right side is downward-sloping, now, the pitch smaller of the upper and lower pole plate in left side, the spacing of the upper and lower pole plate on right side becomes large, thus reduces rate of film build and the thickness in left side, improve rate of film build and the thickness on right side, and then improve the homogeneity of film forming on bottom crown;
In step 2, when the thickness of film forming on the right side of bottom crown is greater than the thickness of left side film forming, in described step 3, by the nut on the right side of bottom crown is upwards twisted, nut on the left of bottom crown is twisted downwards, thus the right side of bottom crown is inclined upwardly, left side is downward-sloping, now, the pitch smaller of the upper and lower pole plate on right side, the spacing of the upper and lower pole plate in left side becomes large, thus reduces rate of film build and the thickness on right side, improve rate of film build and the thickness in left side, and then improve the homogeneity of film forming on bottom crown.
Beneficial effect of the present invention: a kind of chemical vapor deposition unit provided by the invention and using method thereof, described chemical vapor deposition unit comprises the upper and lower pole plate be oppositely arranged, the strut member be located at deposition substrate above described bottom crown, be located at the pedestal below described bottom crown and be located at below described pedestal; Wherein, between described strut member, pedestal, bottom crown and deposition substrate by several threaded post and to be sheathed on respectively in several threaded post and the several nuts be positioned at above described deposition substrate are connected; Thus by regulating the height of several nut can realize the different positions of described bottom crown and the inclination of different angles, make the spacing between upper and lower pole plate adjustable, in actual production film process, local spacing larger for Film Thickness Ratio can be turned down, local spacing smaller for thickness is tuned up, thus change thickness, film uniformity is played a role in improving.
Accompanying drawing explanation
In order to further understand feature of the present invention and technology contents, refer to following detailed description for the present invention and accompanying drawing, but accompanying drawing only provides reference and explanation use, is not used for being limited the present invention.
In accompanying drawing,
Fig. 1 is the structural representation of existing a kind of chemical vapor deposition unit;
Fig. 2 is the structural representation of chemical vapor deposition unit of the present invention;
Fig. 3 is the effect schematic diagram after the spacing adjustment of upper and lower pole plate in chemical vapor deposition unit of the present invention.
Embodiment
For further setting forth the technique means and effect thereof that the present invention takes, be described in detail below in conjunction with the preferred embodiments of the present invention and accompanying drawing thereof.
Refer to Fig. 2, the strut member 50 that the invention provides a kind of chemical vapor deposition unit, comprise the top crown 10 that is oppositely arranged and bottom crown 20, be located at deposition substrate 30 above described bottom crown 20, be located at the pedestal 40 below described bottom crown 20 and be located at below described pedestal 40;
Wherein, described pedestal 40 comprises the first back up pad 41 for supporting described bottom crown 20 and is fixedly connected on the back-up block 42 of described first back up pad 41 central authorities below; Described strut member 50 comprises the second back up pad 51 for supporting described pedestal 40 and is fixedly connected on the pillar stiffener 52 of described second back up pad 51 central authorities below;
Concrete, described second back up pad 51 with between the first back up pad 41, bottom crown 20 and deposition substrate 30 by several threaded post 60 and to be sheathed on respectively in several threaded post 60 and the several nuts 70 be positioned at above described deposition substrate 30 are connected;
Concrete, the bottom of described several threaded post 60 is fixedly connected with the second back up pad 51 respectively, described first back up pad 41, bottom crown 20, and be respectively equipped with several first in deposition substrate 30, second, third through-hole 43, 23, 33, described several threaded post 60 is through described first back up pad 41, bottom crown 20, and first in deposition substrate 30, second, third through-hole 43, 23, 33 and extend out, several nut 70 is sheathed on several threaded post 60 from the top of described deposition substrate 30, and with realize between threaded post 60 being threaded, thus by regulating the height of several nut 70 can realize the described different positions of bottom crown 20 and the inclination of different angles, make, bottom crown 10, spacing between 20 is adjustable, film uniformity is played a role in improving.
As shown in Figure 2, in embodiment provided by the invention, described strut member 50 is connected by two threaded post 60 and two nuts 70 with between pedestal 40, bottom crown 20 and deposition substrate 30, and described two threaded post 60 lay respectively at the left and right sides of described bottom crown 20.
In chemical vapor deposition processes, when the thickness of film forming on the left of bottom crown 20 is greater than the thickness of right side film forming, nut 70 on the left of bottom crown 20 upwards can be twisted, nut 70 on the right side of bottom crown 20 is twisted downwards, thus the left side of bottom crown 20 is inclined upwardly, right side is downward-sloping, realize effect as shown in Figure 3, now, left side upper, bottom crown 10, the spacing (spacing) of 20 diminishes, right side upper, bottom crown 10, the spacing (spacing) of 20 becomes large, thus reduce rate of film build and the thickness in left side, improve rate of film build and the thickness on right side, and then improve the homogeneity of film forming on bottom crown 20.
Otherwise, when the thickness of film forming on the right side of bottom crown 20 is greater than the thickness of left side film forming, nut 70 on the right side of bottom crown 20 upwards can be twisted, nut 70 on the left of bottom crown 20 is twisted downwards, thus the right side of bottom crown 20 is inclined upwardly, left side is downward-sloping, now, right side upper, bottom crown 10, the spacing (spacing) of 20 diminishes, left side upper, bottom crown 10, the spacing (spacing) of 20 becomes large, thus reduce rate of film build and the thickness on right side, improve rate of film build and the thickness in left side, and then improve the homogeneity of film forming on bottom crown 20.
In like manner, when threaded post 60 is distributed in the front and back position of bottom crown 20, by adjustment bottom crown 20 at the angle of inclination of fore-and-aft direction, thus the one-tenth film uniformity of bottom crown 20 fore-and-aft direction can be adjusted.Concrete, all right uniform distribution of described threaded post 60, in other position of bottom crown 20, adjusts the homogeneity of film forming on bottom crown 20 by the height of the nut 70 adjusting different positions.
Concrete, described upper and lower pole plate 10,20 is about two pieces parallel electrodes, and wherein, described top crown 10 is connected with radio-frequency power supply 11, described bottom crown 20 ground connection.
Concrete, described deposition substrate 30 is the underlay substrate of reactant gases deposition film forming, and preferably, described deposition substrate 30 is glass substrate.
Concrete, described first back up pad 41 and the second back up pad 51 can be the substrate of circle, trilateral or other shape.
Concrete, described pedestal 40 is connected to step motor by transmission mechanism, is elevated bottom crown 20 in a stepwise manner.
Concrete, described chemical vapor deposition unit also comprises chamber body 90, it is inner that described top crown 10, bottom crown 20, deposition substrate 30, pedestal 40 are all positioned at described chamber body 90, second back up pad 51 of described strut member 50 is positioned at described chamber body 90 inside, the top of the pillar stiffener 52 of described strut member 50 is positioned at described chamber body 90 inside, bottom passes from described chamber body 90, is positioned at described chamber body 90 outside.
Concrete, described chamber body 90 is provided with the air inlet port 91 for passing into reactant gases to chamber body 90 inside.
Concrete, horizontal direction stop collar 80 is provided with outside described pillar stiffener 52, described horizontal direction stop collar 80 is positioned at the outside of described chamber body 90, and be fixed on wall or other object by connection mechanism, when moving up and down under the drive of described pedestal 40 at step motor, because pedestal 40 is connected with nut 70 by threaded post 60 with strut member 50, thus strut member 50 also can move up and down with pedestal 40, now, described horizontal direction stop collar 80 plays the spacing effect of horizontal direction to described pillar stiffener 52.
Refer to Fig. 2-3, the present invention also provides a kind of using method of chemical vapor deposition unit, comprises the steps:
Step 1, as shown in Figure 2, the strut member 50 one chemical vapor deposition unit being provided, it comprises the top crown 10 that is oppositely arranged and bottom crown 20, be located at deposition substrate 30 above described bottom crown 20, be located at the pedestal 40 below described bottom crown 20 and be located at below described pedestal 40;
Wherein, described pedestal 40 comprises the first back up pad 41 for supporting described bottom crown 20 and is fixedly connected on the back-up block 42 of described first back up pad 41 central authorities below; Described strut member 50 comprises the second back up pad 51 for supporting described pedestal 40 and is fixedly connected on the pillar stiffener 52 of described second back up pad 51 central authorities below;
Described second back up pad 51 with between the first back up pad 41, bottom crown 20 and deposition substrate 30 by several threaded post 60 and to be sheathed on respectively in several threaded post 60 and the several nuts 70 be positioned at above described deposition substrate 30 are connected;
The bottom of described several threaded post 60 is fixedly connected with the second back up pad 51 respectively, several first, second, third through hole 43,23,33 is respectively equipped with in described first back up pad 41, bottom crown 20 and deposition substrate 30, described several threaded post 60 is passed first, second, third through hole 43,23,33 in described first back up pad 41, bottom crown 20 and deposition substrate 30 and extends out, several nut 70 is sheathed on several threaded post 60 from the top of described deposition substrate 30, and with realize between threaded post 60 being threaded;
Described chemical vapor deposition unit also comprises chamber body 90, it is inner that described top crown 10, bottom crown 20, deposition substrate 30, pedestal 40 are all positioned at described chamber body 90, second back up pad 51 of described strut member 50 is positioned at described chamber body 90 inside, the top of the pillar stiffener 52 of described strut member 50 is positioned at described chamber body 90 inside, bottom passes from described chamber body 90, is positioned at described chamber body 90 outside; Described chamber body 90 is provided with the air inlet port 91 for passing into reactant gases to chamber body 90 inside;
Step 2, pass into reactant gases by air inlet port 91 to chamber body 90 inside, radio-frequency power supply 11 provides energy by top crown 10 to chamber body 90 inside, bottom crown 20 is as the direct ground connection of lower electrode, thus rf electric field is produced between top crown 10 and bottom crown 20, reactant gases is excited into plasma body, and then plated film is carried out to the deposition substrate 30 be positioned on bottom crown 20;
Step 3, as shown in Figure 3, when there is the situation that the film forming thickness of different positions on bottom crown 20 differs in described step 2, stop deposition manufacture process, open chamber body 90, by regulating the height of the nut 70 in the threaded post 60 of different positions, the spacing between the upper and lower pole plate 10,20 of adjustment different positions, local spacing larger for Film Thickness Ratio is turned down, local spacing smaller for thickness is tuned up, thus changes thickness, play the effect improving film uniformity.
Preferably, in described chemical vapor deposition unit, described strut member 50 is connected by two threaded post 60 and two nuts 70 with between pedestal 40, bottom crown 20 and deposition substrate 30, and described two threaded post 60 lay respectively at the left and right sides of described bottom crown 20.
In step 2, when the thickness of film forming on the left of bottom crown 20 is greater than the thickness of right side film forming, in described step 3, by the nut 70 on the left of bottom crown 20 is upwards twisted, nut 70 on the right side of bottom crown 20 is twisted downwards, thus the left side of bottom crown 20 is inclined upwardly, right side is downward-sloping, realize effect as shown in Figure 3, now, left side upper, bottom crown 10, the spacing (spacing) of 20 diminishes, right side upper, bottom crown 10, the spacing (spacing) of 20 becomes large, thus reduce rate of film build and the thickness in left side, improve rate of film build and the thickness on right side, and then improve the homogeneity of film forming on bottom crown 20.
In step 2, when the thickness of film forming on the right side of bottom crown 20 is greater than the thickness of left side film forming, in described step 3, by the nut 70 on the right side of bottom crown 20 is upwards twisted, nut 70 on the left of bottom crown 20 is twisted downwards, thus the right side of bottom crown 20 is inclined upwardly, left side is downward-sloping, now, right side upper, bottom crown 10, the spacing (spacing) of 20 diminishes, left side upper, bottom crown 10, the spacing (spacing) of 20 becomes large, thus reduce rate of film build and the thickness on right side, improve rate of film build and the thickness in left side, and then improve the homogeneity of film forming on bottom crown 20.
In sum, a kind of chemical vapor deposition unit provided by the invention and using method thereof, described chemical vapor deposition unit comprises the upper and lower pole plate be oppositely arranged, the strut member be located at deposition substrate above described bottom crown, be located at the pedestal below described bottom crown and be located at below described pedestal; Wherein, between described strut member, pedestal, bottom crown and deposition substrate by several threaded post and to be sheathed on respectively in several threaded post and the several nuts be positioned at above described deposition substrate are connected; Thus by regulating the height of several nut can realize the different positions of described bottom crown and the inclination of different angles, make the spacing between upper and lower pole plate adjustable, in actual production film process, local spacing larger for Film Thickness Ratio can be turned down, local spacing smaller for thickness is tuned up, thus change thickness, film uniformity is played a role in improving.
The above; for the person of ordinary skill of the art; can make other various corresponding change and distortion according to technical scheme of the present invention and technical conceive, and all these change and be out of shape the protection domain that all should belong to the accompanying claim of the present invention.
Claims (10)
1. a chemical vapor deposition unit, it is characterized in that, comprise the top crown (10) and bottom crown (20), the deposition substrate (30) being located at described bottom crown (20) top, the pedestal (40) being located at described bottom crown (20) below and the strut member (50) be located at below described pedestal (40) that are oppositely arranged;
Wherein, described pedestal (40) comprises the first back up pad (41) for supporting described bottom crown (20) and is fixedly connected on the back-up block (42) of described first back up pad (41) central authorities below; Described strut member (50) comprises the second back up pad (51) for supporting described pedestal (40) and is fixedly connected on the pillar stiffener (52) of described second back up pad (51) central authorities below;
Described second back up pad (51) with between the first back up pad (41), bottom crown (20) and deposition substrate (30) by several threaded post (60) and be sheathed on the upper and several nuts (70) being positioned at described deposition substrate (30) top of several threaded post (60) respectively and be connected;
The bottom of described several threaded post (60) is fixedly connected with the second back up pad (51) respectively, described first back up pad (41), bottom crown (20), and be respectively equipped with several first in deposition substrate (30), second, third through-hole (43, 23, 33), described several threaded post (60) is through described first back up pad (41), bottom crown (20), and first in deposition substrate (30), second, third through-hole (43, 23, 33) and extend out, several nut (70) is sheathed on several threaded post (60) from the top of described deposition substrate (30), and realize being threaded with between threaded post (60), thus by regulating the height of several nut (70) that the different positions of described bottom crown (20) and the inclination of different angles can be realized, make, bottom crown (10, 20) spacing between is adjustable.
2. chemical vapor deposition unit as claimed in claim 1, it is characterized in that, described strut member (50) is connected by two threaded post (60) and two nuts (70) with between pedestal (40), bottom crown (20) and deposition substrate (30), and described two threaded post (60) lay respectively at the left and right sides of described bottom crown (20).
3. chemical vapor deposition unit as claimed in claim 1, it is characterized in that, described upper and lower pole plate (10,20) is about two pieces parallel electrodes, wherein, described top crown (10) is connected with radio-frequency power supply (11), described bottom crown (20) ground connection.
4. chemical vapor deposition unit as claimed in claim 1, it is characterized in that, described deposition substrate (30) is glass substrate.
5. chemical vapor deposition unit as claimed in claim 1, is characterized in that, described first back up pad (41) and the second back up pad (51) are circular or trilateral substrate.
6. chemical vapor deposition unit as claimed in claim 1, it is characterized in that, described pedestal (40) is connected to step motor by transmission mechanism, is elevated bottom crown (20) in a stepwise manner.
7. chemical vapor deposition unit as claimed in claim 1, it is characterized in that, described chemical vapor deposition unit also comprises chamber body (90), described top crown (10), bottom crown (20), deposition substrate (30), it is inner that pedestal (40) is all positioned at described chamber body (90), second back up pad (51) of described strut member (50) is positioned at described chamber body (90) inside, the top of the pillar stiffener (52) of described strut member (50) is positioned at described chamber body (90) inside, bottom passes from described chamber body (90), be positioned at described chamber body (90) outside, described chamber body (90) is provided with the air inlet port (91) for passing into reactant gases to chamber body (90) inside.
8. chemical vapor deposition unit as claimed in claim 7, it is characterized in that, horizontal direction stop collar (80) is provided with outside described pillar stiffener (52), described horizontal direction stop collar (80) is positioned at the outside of described chamber body (90), and is fixed on wall by connection mechanism.
9. a using method for chemical vapor deposition unit, is characterized in that, comprises the steps:
Step 1, provide a chemical vapor deposition unit, it comprises the top crown (10) that is oppositely arranged and bottom crown (20), is located at the deposition substrate (30) of described bottom crown (20) top, is located at the pedestal (40) of described bottom crown (20) below and is located at the strut member (50) of described pedestal (40) below;
Wherein, described pedestal (40) comprises the first back up pad (41) for supporting described bottom crown (20) and is fixedly connected on the back-up block (42) of described first back up pad (41) central authorities below; Described strut member (50) comprises the second back up pad (51) for supporting described pedestal (40) and is fixedly connected on the pillar stiffener (52) of described second back up pad (51) central authorities below;
Described second back up pad (51) with between the first back up pad (41), bottom crown (20) and deposition substrate (30) by several threaded post (60) and be sheathed on the upper and several nuts (70) being positioned at described deposition substrate (30) top of several threaded post (60) respectively and be connected;
The bottom of described several threaded post (60) is fixedly connected with the second back up pad (51) respectively, described first back up pad (41), bottom crown (20), and be respectively equipped with several first in deposition substrate (30), second, third through-hole (43, 23, 33), described several threaded post (60) is through described first back up pad (41), bottom crown (20), and first in deposition substrate (30), second, third through-hole (43, 23, 33) and extend out, several nut (70) is sheathed on several threaded post (60) from the top of described deposition substrate (30), and realize being threaded with between threaded post (60),
Described chemical vapor deposition unit also comprises chamber body (90), it is inner that described top crown (10), bottom crown (20), deposition substrate (30), pedestal (40) are all positioned at described chamber body (90), second back up pad (51) of described strut member (50) is positioned at described chamber body (90) inside, the top of the pillar stiffener (52) of described strut member (50) is positioned at described chamber body (90) inside, bottom passes from described chamber body (90), is positioned at described chamber body (90) outside; Described chamber body (90) is provided with the air inlet port (91) for passing into reactant gases to chamber body (90) inside;
Step 2, pass into reactant gases by air inlet port (91) to chamber body (90) inside, radio-frequency power supply (11) provides energy by top crown (10) to chamber body (90) inside, bottom crown (20) is as the direct ground connection of lower electrode, thus rf electric field is produced between top crown (10) and bottom crown (20), reactant gases is excited into plasma body, and then plated film is carried out to the deposition substrate (30) be positioned on bottom crown (20);
Step 3, when there is the situation that the film forming thickness of the upper different positions of bottom crown (20) differs in described step 2, stop deposition manufacture process, open chamber body (90), by regulating the height of the nut (70) in the threaded post (60) of different positions, spacing between the upper and lower pole plate (10,20) of adjustment different positions, local spacing larger for Film Thickness Ratio is turned down, local spacing smaller for thickness is tuned up, thus change thickness, play the effect improving film uniformity.
10. the using method of chemical vapor deposition unit as claimed in claim 9, it is characterized in that, in described chemical vapor deposition unit, described strut member (50) is connected by two threaded post (60) and two nuts (70) with between pedestal (40), bottom crown (20) and deposition substrate (30), and described two threaded post (60) lay respectively at the left and right sides of described bottom crown (20);
In step 2, when the thickness of bottom crown (20) left side film forming is greater than the thickness of right side film forming, in described step 3, by the nut (70) in bottom crown (20) left side is upwards twisted, the nut (70) on bottom crown (20) right side is twisted downwards, thus the left side of bottom crown (20) is inclined upwardly, right side is downward-sloping, now, left side upper, bottom crown (10, 20) pitch smaller, right side upper, bottom crown (10, 20) spacing becomes large, thus reduce rate of film build and the thickness in left side, improve rate of film build and the thickness on right side, and then improve the homogeneity of the upper film forming of bottom crown (20),
In step 2, when the thickness of bottom crown (20) right side film forming is greater than the thickness of left side film forming, in described step 3, by the nut (70) on bottom crown (20) right side is upwards twisted, the nut (70) in bottom crown (20) left side is twisted downwards, thus the right side of bottom crown (20) is inclined upwardly, left side is downward-sloping, now, right side upper, bottom crown (10, 20) pitch smaller, left side upper, bottom crown (10, 20) spacing becomes large, thus reduce rate of film build and the thickness on right side, improve rate of film build and the thickness in left side, and then improve the homogeneity of the upper film forming of bottom crown (20).
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