CN107142452B - The magnetron sputtering that can be improved quality of forming film prepares the system of ito thin film - Google Patents
The magnetron sputtering that can be improved quality of forming film prepares the system of ito thin film Download PDFInfo
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- CN107142452B CN107142452B CN201710287731.2A CN201710287731A CN107142452B CN 107142452 B CN107142452 B CN 107142452B CN 201710287731 A CN201710287731 A CN 201710287731A CN 107142452 B CN107142452 B CN 107142452B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Abstract
The invention discloses a kind of systems that the magnetron sputtering that can be improved quality of forming film prepares ito thin film, comprising: preheating cavity, deposit cavity, cooling chamber, finished product chamber and the vacuum pump and control panel being sequentially connected.ITO target and magnet are provided on the two sidewalls of the deposit cavity, the front end of the ITO target is provided with openable and closable baffle；Venthole is uniformly provided on the two sidewalls of the deposit cavity, and the venthole on the two sidewalls is staggered, to be passed through reaction gas into the deposit cavity；The second heating plate is provided on the bottom surface of the cooling chamber；The finished product is intracavitary to be provided with multiple grids, is multiple compartments by the finished product chamber even partition.It uses the preparation system of pipeline system, so that film forming efficiency greatly improves, and the homogeneous quality that forms a film is high.The system is controlled in film forming and cooling step simultaneously, further improves quality of forming film.
Description
Technical field
The present invention relates to semiconductor processing equipment technical fields more particularly to a kind of magnetic control that can be improved quality of forming film to splash
Penetrate the system for preparing ito thin film.
Background technique
Indium tin oxide (ITO) is a kind of n-type semiconductor, and band gap is between 3.5 and 4.3eV, maximum carrier concentration
Up to 1021cm-3The order of magnitude, therefore ito film is transparent for visible light and near infrared light.Due to ito film have it is high visible
Light transmission rate, high infrared reflectivity, fabulous electrical conductance and the adhesiveness to substrate, it is in various fields such as photoelectricity
It is used as in sub- device, photovoltaic cell, liquid crystal display, sensor, biological devices, plate displaying device and hot mirror transparent
Electrode.
Electrically conducting transparent ito thin film can be prepared in many ways, due in efficient heterojunction solar battery preparation process
In, low temperature process and small ion bombardment are needed, and conductive film ITO requires low resistivity and high optical transmittance,
Therefore it is difficult to meet the requirements with conventional method.Film deposition techniques are the technologies that general technical field of semiconductors is widely used,
If insulating layer and metallized conductive layer are to be obtained by film deposition techniques.Physical vapor deposition device is to realize film deposition
The commonly used equipment of technology obtains film by means such as evaporation, ion beam, sputterings.Wherein, sputtering method deposition rate is fast, and
And obtain film compactness it is good, with high purity the features such as, generallyd use in the industry.But existing sputtering method deposits ito thin film
System completes the heating of substrate, deposition, cooling in a chamber, often inefficient, and film deposition is uneven, if
Standby maintenance is more troublesome.And there is no influence of the cooling temperature for film layer after consideration ito thin film deposition for the prior art.
Summary of the invention
It is an object of the invention to solve at least the above problems, and provide the advantages of at least will be described later.
It is a still further object of the present invention to provide what a kind of magnetron sputtering that can be improved quality of forming film prepared ito thin film to be
System, using the preparation system of pipeline system, so that film forming efficiency greatly improves, and the homogeneous quality that forms a film is high.
It is a still further object of the present invention to provide what a kind of magnetron sputtering that can be improved quality of forming film prepared ito thin film to be
System is controlled in film forming and cooling step, effectively increases quality of forming film.
In order to realize these purposes and other advantages according to the present invention, following technical scheme is provided:
A kind of system that the magnetron sputtering can be improved quality of forming film prepares ito thin film, comprising:
Substrate is preheated to certain temperature, heating is respectively arranged on the top and bottom of the preheating cavity by preheating cavity
Device is provided with the first roller bearing on the two sidewalls of the preheating cavity；
Deposit cavity, is connected to the preheating cavity, and plasma results from the deposit cavity；The bottom surface of the deposit cavity
It is inside provided with the first heating plate, ITO target and magnet, the sputtering of the ITO target are provided on the two sidewalls of the deposit cavity
Face is opposite two-by-two, and the magnet is located at the rear portion of the ITO target, and the magnet on the two sidewalls magnetic force on the contrary, with
Magnetic field is formed between the two sidewalls；The front end of the ITO target is provided with openable and closable baffle；On the two sidewalls of the deposit cavity
It is uniformly provided with venthole, and the venthole on the two sidewalls is staggered, to be passed through reaction gas into the deposit cavity；
Be provided with the second roller bearing on the two sidewalls of the deposit cavity, second roller bearing is located at the lower section of the ITO target, and with it is described
The height of first roller bearing flushes, and second roller bearing is scalable setting；It is evenly arranged on the lower surface of the deposit cavity
Several pillars, the pillar can move up and down；
Cooling chamber is connected to the deposit cavity, is provided with the second heating plate on the bottom surface of the cooling chamber, and described second
It is identical that the initial temperature of the cooling chamber is heated to temperature when depositing in the deposit cavity with substrate by heating plate, and in institute
It states after substrate enters cooling chamber and stops heating；Third roller bearing is provided on the two sidewalls of the cooling chamber, the third roller bearing
Height is flushed with first roller bearing and the second roller bearing；
Finished product chamber is connected to the cooling chamber, and the finished product is intracavitary to be provided with multiple grids, and the finished product chamber is equal
It is even to be divided into multiple compartments；
Vacuum pump is separately connected with the preheating cavity, deposit cavity and cooling chamber, to control the vacuum of each chamber
Degree；
Control panel is separately connected with the preheating cavity, deposit cavity, cooling chamber and vacuum pump, in each chamber
Component and vacuum pump controlled.
Preferably, the magnetron sputtering that can be improved quality of forming film is prepared in the system of ito thin film, further includes:
Temperature sensor is controlled by the control panel, and is respectively arranged at the preheating cavity, deposit cavity and cooling chamber
Side wall on.
Preferably, the magnetron sputtering that can be improved quality of forming film is prepared in the system of ito thin film, and described second
Roller bearing is located at outside the region of the plasma.
Preferably, the magnetron sputtering that can be improved quality of forming film is prepared in the system of ito thin film, the baffle
Retractable mode specifically:
The baffle is cross-linked in a manner of openable and closable by least 3 sepals and is constituted, and the baffle open when, institute
It states sepal and forms a plane and parallel with the side wall of the deposit cavity, for the baffle in closure, the sepal forms a closure
The ITO target is wrapped in inside the closed cap body by cover.
Preferably, the magnetron sputtering that can be improved quality of forming film is prepared in the system of ito thin film, the finished product
The bottom of chamber is provided with telescopic platform, the telescopic platform make in full extension the lowermost compartment of the finished product chamber with it is described cold
But the outlet of chamber is concordant, and the telescopic platform makes the compartment and the cooling chamber of the top of the finished product chamber in complete shrink
Outlet is concordant.
Preferably, the magnetron sputtering that can be improved quality of forming film is prepared in the system of ito thin film, described flexible
Gravity sensor, the gravity sensor and the control panel communication connection are provided on platform, the gravity sensor is being felt
When measuring the weight increasing of the finished product chamber, Xiang Suoshu control panel sends signal, and the control panel controls the telescopic platform
The height of 1 compartment of stretching, extension upwards.
Preferably, the magnetron sputtering that can be improved quality of forming film is prepared in the system of ito thin film, described flexible
The suggestion device with the control panel communication connection is provided on platform, the suggestion device is after the telescopic platform full extension
It issues and prompts to the control panel.
The present invention is include at least the following beneficial effects:
The system that the magnetron sputtering that can be improved quality of forming film of the invention prepares ito thin film passes through by preheating cavity, deposition
The system for preparing ito thin film of chamber, cooling chamber, finished product chamber and vacuum pump control panel composition, it is thin will to prepare ITO on substrate
The process decomposition of film is completed in several chambers, so that film forming efficiency greatly improves, that is, improves the productivity of equipment.
By the way that certain temperature will be preheated to before substrate film coating in preheating cavity, so that time of the substrate in deposit cavity has
The reduction of effect, and then improve the working efficiency of deposit cavity, while reducing residence time of the substrate in deposit cavity, thus can be
It delivers the substrate in cooling chamber and is cooled down immediately after film forming, avoid the remaining target material deposition in deposit cavity on substrate, shadow
Ring the quality of film forming.
By the pillar that telescopic second roller bearing is arranged in deposit cavity He can move up and down, so that the second roller bearing is being incited somebody to action
After substrate is transported to designated position, the pillar of deposit cavity lower surface is moved upwards, thus by fragmented second roller bearing of substrate, the second rolling
It takes turns to deposit cavity two sides and shrinks, not with the EDGE CONTACT of substrate, and back prop is moved downward, and substrate is placed in the bottom of deposit cavity
On face, after being heated to assigned temperature via the bottom surface of deposit cavity in favor of substrate, ito thin film deposition is carried out, it is multiple by being arranged
Pillar can guarantee that each stress of substrate is relatively uniform, to avoid being crushed caused by substrate unbalance stress, and due to pillar
Sectional area is much smaller than pillar, thus effectively reduces the contact area of substrate and supporting object, and then reduce dirt on substrate
Attachment, that is, improve final product quality.
It, will by that can be controlled for the target quantity used in the openable and closable baffle of the front end of ITO target setting
It is not required to target to be used to block using baffle, to avoid plasma bombardment target.Meanwhile by setting venthole in two sides
Wall is staggered so that reaction gas enter it is more uniform in chamber, thus be conducive to film deposition thickness it is uniform.
By the way that heating plate is arranged in the bottom of cooling chamber, and guarantee that the initial temperature of cooling chamber is heated to and base by heating plate
Temperature when plate deposits in deposit cavity is identical, when so that the substrate after film deposition entering cooling chamber, and does not have in deposit cavity
The temperature difference, and then avoid excessive temperature differentials and film quality is caused to decline.
Further advantage, target and feature of the invention will be partially reflected by the following instructions, and part will also be by this
The research and practice of invention and be understood by the person skilled in the art.
Detailed description of the invention
Fig. 1 is that the structure for the system that the magnetron sputtering of the present invention that can be improved quality of forming film prepares ito thin film is shown
It is intended to.
Specific embodiment
Present invention will be described in further detail below with reference to the accompanying drawings, to enable those skilled in the art referring to specification text
Word can be implemented accordingly.
It should be appreciated that such as " having ", "comprising" and " comprising " term used herein do not allot one or more
The presence or addition of a other elements or combinations thereof.
As shown in Figure 1, a kind of system that the magnetron sputtering that can be improved quality of forming film prepares ito thin film, comprising: preheating cavity
1, substrate is preheated to certain temperature, having heaters, the preheating cavity are respectively set on the top and bottom of the preheating cavity 1
The first roller bearing is provided on 1 two sidewalls；Deposit cavity 2, is connected to the preheating cavity 1, and plasma results from the deposition
In chamber 2；It is provided with heating plate in the bottom surface of the deposit cavity 2, is provided with ITO target and magnetic on the two sidewalls of the deposit cavity
The sputter face of body, the ITO target is opposite two-by-two, and the magnet is located at the rear portion of the ITO target, and on the two sidewalls
The magnetic force of magnet is on the contrary, to form magnetic field between the two sidewalls；The front end of the ITO target is provided with openable and closable baffle；
Venthole is uniformly provided on the two sidewalls of the deposit cavity 2, and the venthole on the two sidewalls is staggered, with to described
Reaction gas is passed through in deposit cavity 2；The second roller bearing is provided on the two sidewalls of the deposit cavity 2, second roller bearing is located at institute
The lower section of ITO target is stated, and is flushed with the height of first roller bearing, and second roller bearing is scalable setting；It is described heavy
Several pillars 4 are evenly arranged on the lower surface of product chamber 2, the pillar 4 can move up and down；Cooling chamber 5, it is described heavy to be connected to
Chamber 2 is accumulated, is provided with the second heating plate 3 on the bottom surface of the cooling chamber 5, second heating plate 3 is initial by the cooling chamber 5
The temperature that temperature is heated to when depositing in the deposit cavity 2 with substrate is identical, and stops after the substrate enters cooling chamber 5
Heating；It is provided with third roller bearing on the two sidewalls of the cooling chamber 5, the height of the third roller bearing and first roller bearing and the
Two roller bearings flush；Finished product chamber 6 is connected to the cooling chamber 5, multiple grids 7 is provided in the finished product chamber 6, will be described
6 even partition of finished product chamber is multiple compartments；Vacuum pump 8 is separately connected with the preheating cavity 1, deposit cavity 2 and cooling chamber 5, with
Control the vacuum degree of each chamber；Control panel 9 divides with the preheating cavity 1, deposit cavity 2, cooling chamber 5 and vacuum pump 8
It does not connect, to control the indoor component of each chamber and vacuum pump 8.
In the above scheme, by the way that the vacuum pump being separately connected with preheating cavity, deposit cavity and cooling chamber is arranged, can guarantee
Substrate is preheated and is cooled down in the environment of vacuum, to ensure that the cleannes of substrate surface, conducive to the matter for improving film forming
Amount can guarantee in deposit cavity in addition to reaction gas and target by the way that deposit cavity to be vacuum-treated without other impurities, thus
Further improve the quality of ito thin film.By in the multiple grids of the intracavitary setting of finished product so that finished product it is intracavitary can place it is more
A finished substrate, the convenience that the system of improving uses.By the way that the control panel connecting with each chamber and device is arranged, improve
The convenience that system uses.In the system that the above-mentioned magnetron sputtering that can be improved quality of forming film prepares ito thin film, reaction
Gas enters gas transmission plate by multiple air inlets on gas transmission plate, is then passed through in chamber via the through-hole below gas transmission plate, electric
From plasma is generated, the surface of ITO target is bombarded, it is thin that the ITO target deposition got off by bombardment forms ITO on the surface of the substrate
Film, by the way that magnet is arranged after ITO target, by magnet generate magnetic field, plasma under the Lorentz force action in magnetic field,
It is tightly constrained between two targets, to realize high-speed sputtering.If by setting reaction gas by below gas transmission plate
Dry through-hole sprays so that reaction gas is more uniform in substrate surface distribution, i.e. plasma distribution is more uniform, and then improves
The uniformity of film forming.By the way that heating plate is arranged on the bottom plate of cooling chamber, so that heating plate effectively controls in the cooling chamber
Temperature, avoid substrate when being cooled down into cooling chamber, and excessive temperature differentials in deposit cavity, to affect quality of forming film.
In one preferred embodiment, further includes: temperature sensor is controlled by the control panel 9, and is respectively arranged at institute
On the side wall for stating preheating cavity 1, deposit cavity 2 and cooling chamber 5.
In the above scheme, by the way that temperature sensor, Neng Gouzhun are arranged on the side wall of preheating cavity, deposit cavity and cooling chamber
The true indoor temperature of understanding chamber, and then the indoor temperature of each chamber is controlled using control panel as needed.
In one preferred embodiment, second roller bearing is located at outside the region of the plasma.
In the above scheme, it is located at outside the region of the plasma by limiting the second roller bearing, can be avoided ITO target
It is deposited on the second roller bearing, i.e., effectively controls the depositional area of ITO target, avoid target waste, saved cost.
In one preferred embodiment, the retractable mode of the baffle specifically: the baffle is by least 3 sepals can open
The mode of conjunction is cross-linked composition, and the baffle, when opening, the sepal forms a plane and the side with the deposit cavity
Wall is parallel, and for the baffle in closure, the sepal forms a closure cover, and the ITO target is wrapped in the closed cap
Internal portion.
In the above scheme, it is cross-linked by least 3 sepals by being by baffle plate setting, so that baffle is in closure,
Due between sepal staggeredly, the cover airtight space that baffle is formed, avoid not needing using ITO target by Hong
It hits, meanwhile, when the flaps are opened, due to keeping parallelism between sepal, because being conducive to ITO target without stopping target to expose baffle
Application.
In one preferred embodiment, the front end of the air inlet is provided with baffle, to form a storage before the air inlet
The indoor reaction gas of the air storing cavity is passed through the gas transmission plate 12 by gas chamber, the intermediate openings of the baffle.
In the above scheme, by the way that baffle is arranged before air inlet, gas storage chamber is formed, so that into the reaction of gas transmission plate
Gas is introduced into air storing cavity room, so that the air pressure of reaction gas obtains certain stabilization, then again by baffle
Opening enters in gas transmission plate, so that the reaction gas stable gas pressure and air-flow into gas transmission plate mitigate, in favor of in each through-hole
The uniformity of outlet is conducive to form a film more uniform so that the gas into deposit cavity is uniform.
In one preferred embodiment, the bottom of the finished product chamber 6 is provided with telescopic platform 10, and the telescopic platform 10 is in full extension
When keep the lowermost compartment of the finished product chamber 6 concordant with the outlet of the cooling chamber 6, the telescopic platform 10 is in complete shrink
Keep the compartment of the top of the finished product chamber 6 concordant with the outlet of the cooling chamber 6.
In the above scheme, by enabling finished product chamber to move up and down in the bottom of finished product chamber setting telescopic platform, so as to
It is placed in the intracavitary different compartments of finished product in the substrate come out by cooling chamber, facilitates the storage of finished product.
In one preferred embodiment, gravity sensor 11, the gravity sensor 11 and institute are provided on the telescopic platform 10
9 communication connection of control panel is stated, the gravity sensor 11 is when the weight for sensing the finished product chamber 6 increases, to the control
Panel 9 processed sends signal, and the control panel 9 controls the height that the telescopic platform 10 stretches 1 compartment upwards.
It in the above scheme, can be by gravity sensor to control plane by the way that gravity sensor is arranged on telescopic platform
Plate sends signal, and then realizes that telescopic platform stretches the height of a compartment upwards often in a compartment after one substrate of placement,
So that the subsequent substrate come out by cooling chamber is placed in the compartment below the compartment.
In one preferred embodiment, the suggestion device with 9 communication connection of control panel is provided on the telescopic platform 10,
The suggestion device is issued to the control panel 9 after 10 full extension of telescopic platform and is prompted.
In the above scheme, by the way that suggestion device is arranged, it can issue and prompt to control panel after a finished product chamber is filled,
In order to which the finished product chamber that user more renews in time is used to hold substrate.
Although the embodiments of the present invention have been disclosed as above, but its is not only in the description and the implementation listed
With it can be fully applied to various fields suitable for the present invention, for those skilled in the art, can be easily
Realize other modification, therefore without departing from the general concept defined in the claims and the equivalent scope, the present invention is simultaneously unlimited
In specific details and legend shown and described herein.
Claims (4)
1. a kind of system that the magnetron sputtering that can be improved quality of forming film prepares ito thin film, for thin in deposition on substrate ITO
Film, wherein include:
Substrate is preheated to certain temperature, having heaters, institute is respectively set on the top and bottom of the preheating cavity by preheating cavity
It states and is provided with the first roller bearing on the two sidewalls of preheating cavity；
Deposit cavity, is connected to the preheating cavity, and plasma results from the deposit cavity；It is set in the bottom surface of the deposit cavity
It is equipped with the first heating plate, ITO target and magnet, the sputter face two of the ITO target are provided on the two sidewalls of the deposit cavity
Two is opposite, and the magnet is located at the rear portion of the ITO target, and the magnetic force of the magnet on the two sidewalls is on the contrary, with described
Magnetic field is formed between two sidewalls；The front end of the ITO target is provided with openable and closable baffle；On the two sidewalls of the deposit cavity uniformly
Venthole is offered, and the venthole on the two sidewalls is staggered, to be passed through reaction gas into the deposit cavity；It is described
It is provided with the second roller bearing on the two sidewalls of deposit cavity, second roller bearing is located at the lower section of the ITO target, and with described first
The height of roller bearing flushes, and second roller bearing is scalable setting；It is evenly arranged on the lower surface of the deposit cavity several
Pillar, the pillar can move up and down；
Cooling chamber is connected to the deposit cavity, and the second heating plate, second heating are provided on the bottom surface of the cooling chamber
It is identical that the initial temperature of the cooling chamber is heated to temperature when depositing in the deposit cavity with substrate by plate, and in the base
Plate stops heating after entering cooling chamber；Third roller bearing, the height of the third roller bearing are provided on the two sidewalls of the cooling chamber
It is flushed with first roller bearing and the second roller bearing；
Finished product chamber is connected to the cooling chamber, and the finished product is intracavitary to be provided with multiple grids, and the finished product chamber is uniformly divided
It is divided into multiple compartments；
Vacuum pump is separately connected with the preheating cavity, deposit cavity and cooling chamber, to control the vacuum degree of each chamber；
Control panel is separately connected with the preheating cavity, deposit cavity, cooling chamber and vacuum pump, to the indoor portion of each chamber
Part and vacuum pump are controlled；
Wherein, the retractable mode of the baffle specifically:
The baffle is cross-linked in a manner of openable and closable by least 3 sepals and is constituted, and the baffle open when, the calyx
Piece one plane of formation is simultaneously parallel with the side wall of the deposit cavity, and for the baffle in closure, the sepal forms a closure cover,
The ITO target is wrapped in inside the closed cap body；
In addition, the bottom of the finished product chamber is provided with telescopic platform, the telescopic platform makes the finished product chamber in full extension most
The compartment of lower end is concordant with the outlet of the cooling chamber, and the telescopic platform makes the top of the finished product chamber in complete shrink
Compartment is concordant with the outlet of the cooling chamber；Be provided with gravity sensor on the telescopic platform, the gravity sensor with it is described
Control panel communication connection, the gravity sensor is when the weight for sensing the finished product chamber increases, Xiang Suoshu control panel
Signal is sent, the control panel controls the height that the telescopic platform stretches 1 compartment upwards.
2. can be improved the system that the magnetron sputtering of quality of forming film prepares ito thin film as described in claim 1, wherein also wrap
It includes:
Temperature sensor is controlled by the control panel, and is respectively arranged at the side of the preheating cavity, deposit cavity and cooling chamber
On wall.
3. can be improved the system that the magnetron sputtering of quality of forming film prepares ito thin film as described in claim 1, wherein described
Second roller bearing is located at outside the region of the plasma.
4. can be improved the system that the magnetron sputtering of quality of forming film prepares ito thin film as described in claim 1, wherein described
The suggestion device with the control panel communication connection is provided on telescopic platform, the suggestion device is stretched completely in the telescopic platform
Control panel described in Zhan Houxiang issues prompt.
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| CN201710287731.2A CN107142452B (en) | 2017-04-27 | 2017-04-27 | The magnetron sputtering that can be improved quality of forming film prepares the system of ito thin film |
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