CN107011813B - 各向异性导电膜的组成物、各向异性导电膜以及使用所述各向异性导电膜的连接结构 - Google Patents

各向异性导电膜的组成物、各向异性导电膜以及使用所述各向异性导电膜的连接结构 Download PDF

Info

Publication number
CN107011813B
CN107011813B CN201611119253.6A CN201611119253A CN107011813B CN 107011813 B CN107011813 B CN 107011813B CN 201611119253 A CN201611119253 A CN 201611119253A CN 107011813 B CN107011813 B CN 107011813B
Authority
CN
China
Prior art keywords
conductive film
anisotropic conductive
compound
resin
formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201611119253.6A
Other languages
English (en)
Other versions
CN107011813A (zh
Inventor
高连助
权纯荣
金智软
金荷娜
朴永祐
徐贤柱
许健宁
黄慈英
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Guo Dujianduansucai
Original Assignee
Guktoh Chemical Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guktoh Chemical Co ltd filed Critical Guktoh Chemical Co ltd
Publication of CN107011813A publication Critical patent/CN107011813A/zh
Application granted granted Critical
Publication of CN107011813B publication Critical patent/CN107011813B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18Manufacture of films or sheets
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02Non-macromolecular additives
    • C09J11/04Non-macromolecular additives inorganic
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02Non-macromolecular additives
    • C09J11/06Non-macromolecular additives organic
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J171/00Adhesives based on polyethers obtained by reactions forming an ether link in the main chain; Adhesives based on derivatives of such polymers
    • C09J171/08Polyethers derived from hydroxy compounds or from their metallic derivatives
    • C09J171/10Polyethers derived from hydroxy compounds or from their metallic derivatives from phenols
    • C09J171/12Polyphenylene oxides
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02Electrically-conducting adhesives
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • H01B1/24Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon or silicon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2300/00Characterised by the use of unspecified polymers
    • C08J2300/12Polymers characterised by physical features, e.g. anisotropy, viscosity or electrical conductivity
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2363/00Characterised by the use of epoxy resins; Derivatives of epoxy resins
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2371/00Characterised by the use of polyethers obtained by reactions forming an ether link in the main chain; Derivatives of such polymers
    • C08J2371/08Polyethers derived from hydroxy compounds or from their metallic derivatives
    • C08J2371/10Polyethers derived from hydroxy compounds or from their metallic derivatives from phenols
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2463/00Characterised by the use of epoxy resins; Derivatives of epoxy resins
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2471/00Characterised by the use of polyethers obtained by reactions forming an ether link in the main chain; Derivatives of such polymers
    • C08J2471/02Polyalkylene oxides
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/18Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20Oxides; Hydroxides
    • C08K3/22Oxides; Hydroxides of metals
    • C08K2003/2227Oxides; Hydroxides of metals of aluminium
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00Polymer mixtures characterised by other features
    • C08L2205/02Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00Polymer mixtures characterised by other features
    • C08L2205/03Polymer mixtures characterised by other features containing three or more polymers in a blend
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/30Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/30Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/314Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive layer and/or the carrier being conductive
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199Material of the matrix
    • H01L2224/2929Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339Silver [Ag] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29344Gold [Au] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29347Copper [Cu] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29355Nickel [Ni] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/29386Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2224/29387Ceramics, e.g. crystalline carbides, nitrides or oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119Arrangement of the bump connectors prior to mounting
    • H01L2224/81191Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/819Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector with the bump connector not providing any mechanical bonding
    • H01L2224/81901Pressing the bump connector against the bonding areas by means of another connector
    • H01L2224/81903Pressing the bump connector against the bonding areas by means of another connector by means of a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/921Connecting a surface with connectors of different types
    • H01L2224/9211Parallel connecting processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01012Magnesium [Mg]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0102Calcium [Ca]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0103Zinc [Zn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01058Cerium [Ce]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049Nitrides composed of metals from groups of the periodic table
    • H01L2924/04944th Group
    • H01L2924/04941TiN
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049Nitrides composed of metals from groups of the periodic table
    • H01L2924/050313th Group
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049Nitrides composed of metals from groups of the periodic table
    • H01L2924/050414th Group
    • H01L2924/05042Si3N4
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/053Oxides composed of metals from groups of the periodic table
    • H01L2924/05322nd Group
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/053Oxides composed of metals from groups of the periodic table
    • H01L2924/05344th Group
    • H01L2924/05341TiO2
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/053Oxides composed of metals from groups of the periodic table
    • H01L2924/05344th Group
    • H01L2924/05342ZrO2
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/053Oxides composed of metals from groups of the periodic table
    • H01L2924/05388th Group
    • H01L2924/05381FeOx
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/053Oxides composed of metals from groups of the periodic table
    • H01L2924/054212th Group
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/053Oxides composed of metals from groups of the periodic table
    • H01L2924/054313th Group
    • H01L2924/05432Al2O3
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/053Oxides composed of metals from groups of the periodic table
    • H01L2924/054414th Group
    • H01L2924/05442SiO2
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/059Being combinations of any of the materials from the groups H01L2924/042 - H01L2924/0584, e.g. oxynitrides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/0615Styrenic polymer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/0635Acrylic polymer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/066Phenolic resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/0665Epoxy resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/0675Polyester
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/069Polyurethane
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/0695Polyamide
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/07Polyamine or polyimide
    • H01L2924/07025Polyimide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Dispersion Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

本发明涉及一种各向异性导电膜组成物、各向异性导电膜以及使用所述各向异性导电膜的连接结构。各向异性导电膜包含:粘合剂树脂;包括脂环族环氧化合物和氧杂环丁烷化合物的可固化化合物;季铵催化剂;以及导电粒子,各向异性导电膜具有15%或小于15%的热量变化率,以差示扫描量热法(DSC)所测量和方程式1所计算:热量变化率(%)=[(H0‑H1)/H0]×100‑‑‑(1),其中H0是各向异性导电膜的DSC热量,如在25℃下和0小时的时间点所测量,并且H1是各向异性导电膜的DSC热量,如在40℃下静置24小时后所测量。各向异性导电膜可在低温下实现快速固化,同时展现极佳储存稳定性和可靠性。

Description

各向异性导电膜的组成物、各向异性导电膜以及使用所述各 向异性导电膜的连接结构
相关申请案的交叉引用
本申请要求2015年12月07日在韩国知识产权局提交的韩国专利申请第10-2015-0173398号的权益,所述专利申请的全部公开内容以引用的方式并入本文中。
技术领域
本发明涉及各向异性导电膜组成物、使用所述各向异性导电膜组成物制备的各向异性导电膜以及使用所述各向异性导电膜的连接结构。
背景技术
一般来说,各向异性导电膜(anisotropic conductive film,ACF)是指通过使导电粒子分散于如环氧树脂的树脂中制备的膜状粘着剂,并且由各向异性粘着剂聚合物膜形成,所述各向异性导电膜在膜的厚度方向上展现导电特性并且在其表面方向上展现绝缘特性。
当安置于待连接的电路板之间的各向异性导电膜在特定条件下进行加热/压缩时,电路板的重叠电路端线经由导电粒子彼此电连接。另外,相邻电极之间的空间用绝缘粘合树脂填充以使导电粒子彼此隔离,从而使得相邻电极可以彼此电绝缘。
此类各向异性导电膜可以在制造平板显示器,如液晶显示器和有机发光二极管显示器时用于将驱动集成电路(integrated circuit,IC)连接到玻璃衬底。
最近,由于显示器面板厚度减小,不断需要更薄的玻璃衬底。然而,当经由各向异性导电膜将驱动IC安装于玻璃衬底上时,玻璃衬底在加热和压缩期间容易弯曲。玻璃衬底弯曲导致漏光,从而造成显示器故障。玻璃衬底越薄,弯曲越严重,并且使得故障率越高。
为了防止玻璃衬底弯曲,需要可以在5秒或小于5秒内,在150℃或小于150℃的低温下快速固化的各向异性导电膜。虽然可以使用具有高反应性的可固化化合物和固化剂来实现此需要,但使用固化化合物和固化剂由于其高反应性而导致储存稳定性下降并且需要过量稳定剂。日本专利公开案第2012-171980 A号(2012年9月10日)揭示了采用脂环族环氧化合物和氧杂环丁烷化合物作为可固化化合物以及具有特定结构的锍基潜在阳离子催化剂的各向异性导电膜。然而,此各向异性导电膜由于脂环族环氧化合物、氧杂环丁烷化合物以及锍基阳离子催化剂之间的较高反应性而具有较低储存稳定性的问题。
因此,需要可以在150℃或小于150℃的温度下快速固化,同时展现极佳储存稳定性的各向异性导电膜。
发明内容
本发明的一种实施方式是提供可以在低温下实现快速固化同时展现极佳储存稳定性和可靠性的各向异性导电膜组成物以及使用所述各向异性导电膜组成物制造的各向异性导电膜。
本发明的另一种实施方式是使用上文所阐述的各向异性导电膜提供半导体装置。
根据本发明的一种实施方式,提供一种各向异性导电膜组成物,包含:粘合剂树脂;包括脂环族环氧化合物和氧杂环丁烷化合物的可固化化合物;季铵催化剂;以及导电粒子。
根据本发明的另一种实施方式,提供一种各向异性导电膜,包含:粘合剂树脂;包括脂环族环氧化合物和氧杂环丁烷化合物的可固化化合物;季铵催化剂;以及导电粒子,并且热量变化率(heat quantity variation rate)为15%或小于15%,以差示扫描量热法(differential scanning calorimetry,DSC)所测量和方程式1所计算:
热量变化率(%)=[(H0-H1)/H0]×100---(1),
其中H0是各向异性导电膜的DSC热量,如在25℃下和0小时的时间点所测量,并且H1是各向异性导电膜的DSC热量,如在40℃下静置24小时之后所测量。
根据本发明的另一种实施方式,提供一种连接结构,包含:第一连接构件,包含第一电极;第二连接构件,包含第二电极;以及各向异性导电膜,安置于第一连接构件与第二连接构件之间以将第一电极连接到第二电极,其中所述各向异性导电膜是如上文所阐述的各向异性导电膜或使用如上文所阐述的各向异性导电膜制备的各向异性导电膜。
根据本发明,可提供各向异性导电膜组成物或使用脂环族环氧化合物和氧杂环丁烷化合物作为可固化化合物并且使用季铵催化剂的各向异性导电膜,从而在低温下实现快速固化,同时展现极佳储存稳定性和可靠性。
附图说明
图1是根据本发明的一个实施例的连接结构的剖面图。
具体实施方式
在下文中,将详细描述本发明的实施例。本文中将省略对所属领域的技术人员显而易知的细节描述。
本发明的一种实施方式涉及一种各向异性导电膜组成物,包含:粘合剂树脂;包含脂环族环氧化合物和氧杂环丁烷化合物的可固化化合物;季铵催化剂以及导电粒子。
粘合剂树脂
粘合剂树脂的实例可以包含聚酰亚胺树脂、聚酰胺树脂、苯氧基树脂(phenoxyresin)、聚甲基丙烯酸酯树脂、聚丙烯树脂、聚氨基甲酸酯树脂、聚酯树脂、聚酯氨基甲酸酯树脂、聚乙烯醇缩丁醛树脂、苯乙烯-丁二烯-苯乙烯(styrene-butadiene-styrene,SBS)树脂和其环氧化化合物、苯乙烯-乙烯/丁烯-苯乙烯(styrene-ethylene/butylene-styrene,SEBS)树脂和其经修饰的化合物、丙烯腈丁二烯橡胶(acrylonitrile butadiene rubber,NBR)和其氢化化合物以及其组合。具体地说,粘合剂树脂可以是苯氧基树脂,更尤其芴苯氧基树脂。作为芴苯氧基树脂(fluorene phenoxy resin),可以使用(但不限于)含有芴结构的任何苯氧基树脂。
就固体含量来说,按各向异性导电膜组成物的总量计,粘合剂树脂可以20重量%到60重量%的量存在。具体地说,就固体含量来说,按各向异性导电膜组成物的总量计,粘合剂树脂可以25重量%到40重量%,例如25重量%、26重量%、27重量%、28重量%、29重量%、30重量%、31重量%、32重量%、33重量%、34重量%、35重量%、36重量%、37重量%、38重量%、39重量%或40重量%的量存在。
脂环族环氧化合物
各向异性导电膜组成物包含脂环族环氧化合物作为可固化化合物中的一种。因为脂环族环氧化合物具有存在于脂肪族环附近的环氧结构,所述脂环族环氧化合物允许快速开环反应并且因此展现比其它环氧化合物更好的固化反应性。作为脂环族环氧化合物,可以使用(但不限于)包含直接与脂肪族环偶合或经由另一连接位点与其偶合的环氧结构的任何脂环族环氧化合物。在一个实施例中,各向异性导电膜组成物可以包含由式1到4表示的脂环族环氧化合物。
[式1]
Figure BDA0001172733500000041
[式2]
Figure BDA0001172733500000042
[式3]
Figure BDA0001172733500000043
[式4]
Figure BDA0001172733500000051
在式2到4中,n、s、t、u、v、m以及f可以各自独立地为1到50的整数,并且R可以是烷基、乙酰基、烷氧基或羰基。更具体地说,n、s、t、u、v、m以及f可以各自独立地为1到25的整数,并且R可以是烷基、乙酰基或烷氧基。
在本发明的实施例中,脂环族环氧化合物可以单独或以其组合形式使用。
氧杂环丁烷化合物
除脂环族环氧化合物以外,各向异性导电膜组成物还包含氧杂环丁烷化合物作为可固化化合物。如本文所使用,氧杂环丁烷化合物是指含有氧杂环丁烷环的碳基化合物。归因于氧杂环丁烷环的开环反应,氧杂环丁烷化合物具有良好的固化反应性。确切地说,每分子含有1到4个氧杂环丁烷环的氧杂环丁烷化合物可以用于抑制组成物在固化后裂化。具体地说,含有一个氧杂环丁烷环的氧杂环丁烷化合物可以由式5表示:
[式5]
Figure BDA0001172733500000052
其中R1是氢原子;C1到C6烷基,如甲基、乙基、丙基以及丁基;C1到C6氟烷基;烯丙基(allyl group);芳基;呋喃基或噻吩基。R2是C1到C6烷基,如甲基、乙基、丙基或丁基;C2到C6烯基(alkenyl),如1-丙烯基、2-丙烯基、2-甲基-1-丙烯基、2-甲基-2-丙烯基、1-丁烯基、2-丁烯基或3-丁烯基;含有芳香族环的基团,如苯基、苄基(benzyl)、氟苄基、甲氧基苄基(methoxybenzyl)或苯氧基乙基(phenoxyethyl);C2到C6烷基羰基(alkylcarbonyl),如乙基羰基、丙基羰基或丁基羰基;C2到C6烷氧羰基(alkoxycarbonyl),如乙氧基羰基、丙氧基羰基或丁氧基羰基;或C2到C6N-烷基氨甲酰基(N-alkylcarbamoyl group),如乙基氨甲酰基(ethylcarbamoyl)、丙基氨甲酰基、丁基氨甲酰基或戊基氨甲酰基。
具体地说,含有两个氧杂环丁烷环的氧杂环丁烷化合物可以由式6表示:
[式6]
Figure BDA0001172733500000061
其中R1与式5中的R1相同。R3可以由以下中选出:直链或支链亚烷基(alkylenegroup),如亚乙基、亚丙基或亚丁基;直链或支链聚(亚烷氧基);直链或支链不饱和烃基团,如亚丙烯基、甲基亚丙烯基或亚丁烯基;羰基;含有羰基的亚烷基;含有羧基的亚烷基;含有氨甲酰基的亚烷基;以及由式7到19表示的官能团中的任一个。
[式7]
Figure BDA0001172733500000062
其中R4是氢原子;C1到C4烷基,如甲基、乙基、丙基或丁基;C1到C4烷氧基,如甲氧基、乙氧基、丙氧基或丁氧基;卤素原子,如氯原子或溴原子;硝基;氰基;巯基;低级烷基羧基;羧基或氨甲酰基。
[式8]
Figure BDA0001172733500000063
其中R5是氧原子、硫原子、亚甲基、胺基、磺酰基、双(三氟甲基)亚甲基或二甲基亚甲基。
[式9]
Figure BDA0001172733500000064
其中R6是氢原子;C1到C4烷基,如甲基、乙基、丙基或丁基;C1到C4烷氧基,如甲氧基、乙氧基、丙氧基或丁氧基;卤素原子,如氯原子或溴原子;硝基;氰基;巯基;低级烷基羧基;羧基或氨甲酰基。
[式10]
Figure BDA0001172733500000071
其中R7是氧原子、硫原子、亚甲基、胺基、磺酰基、双(三氟甲基)亚甲基、二甲基亚甲基、苯基甲基亚甲基或二苯基亚甲基。
[式11]
Figure BDA0001172733500000072
[式12]
Figure BDA0001172733500000073
在式11和12中,R8是氢原子;C1到C4烷基,如甲基、乙基、丙基或丁基;C1到C4烷氧基,如甲氧基、乙氧基、丙氧基或丁氧基;卤素原子,如氯原子或溴原子;硝基;氰基;巯基;低级烷基羧基;羧基或氨甲酰基。在一些实施例中,R8还可以包含2到4个在萘环中经取代的取代基。
[式13]
Figure BDA0001172733500000074
[式14]
Figure BDA0001172733500000075
[式15]
Figure BDA0001172733500000076
[式16]
Figure BDA0001172733500000081
[式17]
Figure BDA0001172733500000082
[式18]
Figure BDA0001172733500000083
[式19]
Figure BDA0001172733500000084
(其中n在0到10范围内。)
在一些实施例中,含有两个氧杂环丁烷环的氧杂环丁烷化合物可以是由式19表示的化合物的混合物并且具有不同的n值。
除前述化合物以外,含有两个氧杂环丁烷环的氧杂环丁烷化合物可以是由式20表示的化合物:
[式20]
Figure BDA0001172733500000085
其中R1与式5中的R1相同。
具体地说,含有3到4个氧杂环丁烷环的氧杂环丁烷化合物可以是由式21表示的化合物:
[式21]
Figure BDA0001172733500000091
其中R1与式5中的R1相同,并且m是3或4。R9可以是C1到C12支链亚烷基,如由式22、式23以及式24表示的基团;或由式25表示的支链聚(亚烷氧基)。
[式22]
Figure BDA0001172733500000092
其中R10是低级烷基,如甲基、乙基或丙基。
[式23]
Figure BDA0001172733500000093
[式24]
Figure BDA0001172733500000094
[式25]
Figure BDA0001172733500000095
其中n是1到10的整数。
在本发明的实施例中,可以单独或以其组合形式使用上述氧杂环丁烷化合物。
包含脂环族环氧化合物和氧杂环丁烷化合物作为可固化化合物的各向异性导电膜组成物由于化合物的高反应性可以在低温下实现快速固化。在一些实施例中,就固体含量来说,按各向异性导电膜组成物的总重量计,包含脂环族环氧化合物和氧杂环丁烷化合物的可固化化合物可以10重量%到40重量%,尤其15重量%到40重量%,例如15重量%、16重量%、17重量%、18重量%、19重量%、20重量%、21重量%、22重量%、23重量%、24重量%、25重量%、26重量%、27重量%、28重量%、29重量%、30重量%、31重量%、32重量%、33重量%、34重量%、35重量%、36重量%、37重量%、38重量%、39重量%或40重量%的量存在。另外,脂环族环氧化合物与氧杂环丁烷化合物的重量比可以在1∶9到9∶1范围内。
其它可固化化合物
在一些实施例中,各向异性导电膜组成物可以还包含额外可固化化合物以及脂环族环氧化合物和氧杂环丁烷化合物。额外可固化化合物可以包含至少一种由以下所构成的族群中选出的可固化化合物:含有环氧基的倍半硅氧烷(epoxy group-containingsilsesquioxane)化合物、含有氧杂环丁烷基团的倍半硅氧烷化合物、苯酚酚醛环氧(phenol novolac epoxy)化合物以及甲酚酚醛环氧(cresol novolac epoxy)化合物。含有环氧基或氧杂环丁烷基团的倍半硅氧烷化合物可以具有多面体寡聚倍半硅氧烷(polyhedral oligomeric silsesquioxane,POS)结构、无规结构、梯状结构或部分笼状结构。
当此类含有多官能基团的可固化化合物还包含于组成物中时,有可能改进粒子捕获率,同时防止在高温和高湿度下可靠性测试之后各向异性导电膜的体积膨胀。
季铵催化剂
各向异性导电膜组成物包含季铵催化剂。具体地说,作为季铵催化剂,可以使用由式26表示的化合物。
[式26]
Figure BDA0001172733500000101
其中,R11、R12、R13以及R14各自独立地为经取代或未经取代的C1到C6烷基和C6到C20芳基中的一个,并且M是Cl-、BF4 -、PF6 -、N(CF3SO2)2-、CH3CO2 -、CF3CO2 -、CF3SO3 -、HSO4 -、SO4 2-、SbF6 -以及B(C6F5)4 -中的一个,在式26中,例如由M的价数决定,季铵的许多部分可以被调整,以提供中性电荷(neutral charge)。
具体地说,R11、R12、R13以及R14可以各自独立地为由以下中选出的一个:甲基、乙基、丙基、异丙基、丁基、异丁基、仲丁基、叔丁基、戊基、正戊基、叔戊基、异戊基、己基、环己基、苯基、蒽基(anthryl)以及菲基(phenanthryl)。如本文所使用,术语“经取代的”意指化合物中的氢原子经由以下中选出的取代基取代:例如烷基、烷氧基、氨基、卤素原子以及硝基。
季铵催化剂在特定温度下促进脂环族环氧化合物的开环反应并且因此使得脂环族环氧化合物和氧杂环丁烷化合物在150℃或小于150℃的温度下快速固化。此外,与一般用作阳离子催化剂的锍基阳离子催化剂相比,季铵催化剂在小于固化温度的温度下,例如在室温下展现较低反应性,并且因此可以延迟脂环族环氧化合物的开环反应,从而提供极佳储存稳定性。
具体地说,在式26中,M可以是SbF6 -和B(C6F5)4 -中的一个。更具体地说,M可以是B(C6F5)4 -,其对于生态环较友善。
当季铵化合物催化剂与脂环族环氧化合物和氧杂环丁烷化合物一起使用时,有可能减小各向异性导电膜组成物的放热起始温度与放热峰值温度之间的温度差,以差示扫描量热法(DSC)所测量,从而使得组成物快速固化。
就固体含量来说,按各向异性导电膜组成物的总重量计,季铵催化剂可以1重量%到10重量%,例如1重量%、2重量%、3重量%、4重量%、5重量%、6重量%、7重量%、8重量%、9重量%或10重量%的量存在。
稳定剂
在一些实施例中,各向异性导电膜组成物可以包含稳定剂以调节组成物的固化温度。稳定剂用以延迟脂环族环氧化合物的开环反应,从而调节固化温度。
在一个实施例中,由式27表示的化合物可以用作稳定剂。
[式27]
Figure BDA0001172733500000111
其中R15到R19各自独立地为氢原子、烷基、乙酰基、烷氧基羰基、苯甲酰基或苄氧羰基(benzyloxycarbonyl),R20和R21各自独立地为烷基、苄基、邻甲基苄基、间甲基苄基、对甲基苄基或萘甲基(naphthylmethyl),并且X1是烷基硫酸。
在本发明的实施例中,可以使用少量稳定剂,因为稳定剂仅用于微调固化温度。举例来说,按季铵催化剂的重量计,稳定剂可以小于5重量%,尤其超过0重量%到小于5重量%,例如1重量%、2重量%、3重量%、4重量%的量包含于各向异性导电膜组成物中。
导电粒子
导电粒子不受特定限制并且可以由所属领域中使用的典型导电粒子中选出。导电粒子的实例可以包含:包含Au、Ag、Ni、Cu的金属粒子和焊料;碳粒子;通过涂布聚合树脂粒子获得的粒子,如聚乙烯、聚丙烯、聚酯、聚苯乙烯、聚乙烯醇以及其经修饰的树脂,其中金属包含Au、Ag、Ni等;以及经由通过用金属涂布聚合树脂粒子获得的粒子表面的绝缘处理获得的绝缘粒子。导电粒子可以具有例如1微米到20微米,尤其1微米到10微米,例如1微米、2微米、3微米、4微米、5微米、6微米、7微米、8微米、9微米或10微米的粒子大小,取决于电路间距。
在一个实施例中,就固体含量来说,按各向异性导电膜的总重量计,导电粒子可以1重量%到20重量%的量存在。
当各向异性导电膜具有导电层和介电层的双层结构并且用于玻璃衬底与IC之间的连接时,就固体含量来说,按导电层的重量计,导电粒子可以10重量%到50重量%,尤其15重量%到35重量%,例如15重量%、16重量%、17重量%、18重量%、19重量%、20重量%、21重量%、22重量%、23重量%、24重量%、25重量%、26重量%、27重量%、28重量%、29重量%、30重量%、31重量%、32重量%、33重量%、34重量%或35重量%的量存在,但导电粒子的量可以取决于待连接电路的电极区域和电极上粒子的所需数目变化。在此范围内,可以易于在端线之间压缩导电粒子以保持稳定连接可靠性,同时经由提高导电性来减小连接电阻。
无机填充剂
膜组成物中包含的无机填充剂不受特定限制并且可以由所属领域中使用的典型无机填充剂中选出。无机填充剂的实例可以包含(但不限于)氧化铝、二氧化硅、二氧化钛、氧化锆、氧化镁、氧化铈、氧化锌、氧化铁、氮化硅、氮化钛、氮化硼、碳酸钙、硫酸铝、氢氧化铝、钛酸钙、滑石、硅酸钙以及硅酸镁。具体地说,无机填充剂可以是氧化铝、二氧化硅、碳酸钙或氢氧化铝。在一个实施例中,无机填充剂可以是氢氧化铝或二氧化硅。确切地说,氢氧化铝可以改进各向异性导电膜组成物的可涂布性,调节膜组成物的流动性,以及防止粘附体的腐蚀。
就固体含量来说,按各向异性导电膜组成物的总重量计,无机填充剂可以5重量%到30重量%,例如5重量%、6重量%、7重量%、8重量%、9重量%、10重量%、11重量%、12重量%、13重量%、14重量%、15重量%、16重量%、17重量%、18重量%、19重量%、20重量%、21重量%、22重量%、23重量%、24重量%、25重量%、26重量%、27重量%、28重量%、29重量%或30重量%的量存在。在此范围内,无机填充剂可以有效地分散导电粒子并且可以适当地调节各向异性导电膜的流动性。
其它添加剂
在一个实施例中,各向异性导电膜组成物可以还包含硅烷偶合剂。硅烷偶合剂可以包含(但不限于)至少一种由以下所构成的族群中选出的物质:例如可聚合含有氟基的硅化合物,如乙烯基三甲氧基硅烷、乙烯基三乙氧基硅烷以及(甲基)丙烯酰氧基丙基三甲氧基硅烷;含有环氧基的硅化合物,如3-缩水甘油氧基丙基三甲氧基硅烷、3-缩水甘油氧基丙基甲基二甲氧基硅烷以及2-(3,4-环氧环己基)-乙基三甲氧基硅烷;含有氨基的硅化合物,如3-氨基丙基三甲氧基硅烷、N-(2-氨基乙基)-3-氨基丙基三甲氧基硅烷以及N-(2-氨基乙基)-3-氨基丙基甲基二甲氧基硅烷;以及3-氯丙基三甲氧基硅烷。
就固体含量来说,按各向异性导电膜组成物的总重量计,硅烷偶合剂可以0重量%到10重量%,例如1重量%、2重量%、3重量%、4重量%、5重量%、6重量%、7重量%、8重量%、9重量%或10重量%的量存在。
各向异性导电膜组成物可以还包含添加剂,如聚合抑制剂、抗氧化剂以及热稳定剂以提供额外特性,而不影响其基本特性。就固体含量来说,按各向异性导电膜组成物的总重量计,添加剂可以0.01重量%到2重量%,例如0.01重量%、0.05重量%、0.1重量%、0.5重量%、1.5重量%或2重量%的量存在。
聚合抑制剂的实例可以包含(但不限于)氢醌、氢醌单甲醚、对苯醌、吩噻嗪以及其混合物。抗氧化剂可以是酚类或羟基肉桂酸酯抗氧化剂。具体地说,抗氧化剂可以包含四[亚甲基(3,5-二-叔丁基-4-羟基肉桂酸酯)]甲烷、3,5-双(1,1-二甲基乙基)-4-羟基苯丙酸硫代二-2,1-乙烷二基酯等。
本发明的另一种实施方式涉及一种各向异性导电膜,包含:粘合剂树脂;包含脂环族环氧化合物和氧杂环丁烷化合物的可固化化合物;季铵催化剂;以及导电粒子,并且热量变化率为15%或小于15%,以差示扫描量热法(DSC)所测量和方程式1所计算:
热量变化率(%)=[(H0-H1)/H0]×100---(1),
其中H0是各向异性导电膜的DSC热量,如紧接在其制造之后所测量,例如,如在25℃下和0小时的时间点所测量,并且H1是各向异性导电膜的DSC热量,如在40℃下静置24小时之后所测量。
因为粘合剂树脂、包含脂环族环氧化合物和氧杂环丁烷化合物的可固化化合物以及季铵催化剂的细节与各向异性导电膜组成物所述者相同,所以将省略其描述。
在一些实施例中,各向异性导电膜可以还包含导电粒子、额外可固化化合物等。因为其细节与各向异性导电膜组成物所述者相同,所以将省略其描述。
在一个实施例中,各向异性导电膜可以还包含稳定剂。稳定剂与各向异性导电膜组成物的稳定剂相同。就固体含量来说,按各向异性导电膜的总重量计,稳定剂可以超过0重量%到小于5重量%,例如1重量%、2重量%、3重量%、4重量%的量存在。
热量变化率
根据本发明的各向异性导电膜可以具有15%或小于15%,尤其10%或小于10%的热量变化率,如通过方程式1所计算:
热量变化率(%)=[(H0-H1)/H0]×100---(1),
其中H0是各向异性导电膜的DSC热量,如在25℃下和0小时的时间点所测量,并且H1是各向异性导电膜的DSC热量,如在40℃下静置24小时之后所测量。
各向异性导电膜的DSC热量可以通过所属领域中使用的任何典型方法测量。举例来说,各向异性导电膜的DSC热量可以取决于温度,根据各向异性导电膜的卡路里计算,如在-50℃到250℃的温度范围内,以10℃/分钟的加热速率,在氮气氛围下使用DSC(差示扫描量热法计)(Q20,TA仪器)加热所述各向异性导电膜时所测量。在热量变化率的上述范围内,各向异性导电膜具有良好储存稳定性。
DSC放热起始温度和DSC放热峰值温度
根据本发明的各向异性导电膜可以具有70℃到85℃的DSC放热起始温度和90℃到110℃的放热峰值温度。
在DSC图上,DSC放热起始温度定义为热量产生起始点与热量产生结束点之间的基线与最高峰的切线相接时到DSC图斜率由于DSC测量后热量产生而开始增加时的温度。DSC放热峰值温度定义为热量的最高峰所处的温度。
举例来说,DSC放热起始温度和DSC放热峰值温度可以经由在-50℃到250℃的温度范围内,以10℃/分钟的加热速率,在氮气氛围下使用DSC(差示扫描量热法计)(Q20,TA仪器)加热膜组成物的方法所测量。
在DSC放热起始温度和DSC放热峰值温度的上述范围内,各向异性导电膜可以在150℃或小于150℃,例如130℃到150℃的相对较低温度下固化,并且可以归因于DSC放热起始温度与DSC放热峰值温度之间的较小差值而快速固化。
可靠性后连接电阻(T1)
各向异性导电膜可以具有0.5欧姆或小于0.5欧姆的可靠性后连接电阻,如在50℃到90℃的温度下,在0.5兆帕到2兆帕的压力下初步压缩0.5到2秒并且在100℃到150℃的温度下,在50兆帕到90兆帕的压力下主要压缩4到7秒,继而使各向异性导电膜在85℃和85%RH下静置500小时之后所测量。
在可靠性测试后连接电阻的此范围内,各向异性导电膜可以在连接可靠性和长期储存稳定性方面展现改进的特性。
可靠性测试之后的连接电阻可以通过(但不限于)以下示例性方法测量。在此方法中,首先,将各向异性导电膜放置在包含凸起面积为1,200平方微米并且厚度为2,000埃的氧化铟锡(indium tin oxide,ITO)电路的玻璃衬底上,继而在50℃到90℃的温度下,在0.5兆帕到2兆帕的压力下初步压缩0.5到2秒,并且在去除离型膜之后,将凸起面积为1,200平方微米并且厚度为1.5T的IC芯片放置在各向异性导电膜上,继而在100℃到150℃的温度下,在50兆帕到90兆帕的压力下主要压缩4到7秒,从而制备样本。接着,通过4点探针方法,使用电阻计(2000万用表(Multimeter),吉时利仪器(Keithley Instruments))测量所制备样本的4点之间的电阻值,从而发现初始连接电阻T0。接着,将样本在85℃和85%RH下静置500小时,继而以相同方式测量电阻,从而发现可靠性测试后的连接电阻T1。此处,基于在通过电阻计施加1毫安电流后所测量到的电压计算电阻值,并且取平均值。
制造各向异性导电膜的方法
制造各向异性导电膜的方法不需要任何特定装置或设备。举例来说,使包含如上文所阐述的组分的各向异性导电膜组成物溶解于如甲苯的有机溶剂中,继而以不会导致导电粒子粉碎的搅拌速度搅拌一定时间段。接着,将所得材料涂布到离型膜上,达到例如10微米到50微米的厚度,并且干燥一定时间段以使甲苯等挥发,从而获得各向异性导电膜。
本发明的另一种实施方式涉及一种连接结构,包含:第一连接构件,包含第一电极;第二连接构件,包含第二电极;以及各向异性导电膜,安置于第一连接构件与第二连接构件之间以将第一电极连接到第二电极,其中各向异性导电膜可以是根据本发明的实施例的各向异性导电膜。
第一连接构件或第二连接构件包含用于电连接的电极。具体地说,第一连接构件或第二连接构件可以是玻璃或塑料衬底、印刷线路板、陶瓷线路板、柔性线路板、半导体硅芯片、集成电路(integrated circuit,IC)芯片或驱动器IC芯片,对于LCD,其用氧化铟锡(indium tin oxide,ITO)或氧化铟锌(indium zinc oxide,IZO)电极形成。更具体地说,第一连接构件和第二连接构件中的一个可以是IC芯片或驱动器IC芯片,并且另一个可以是玻璃衬底。
参看图1,根据本发明的一个实施例的连接结构30包含:第一连接构件50,包含第一电极70;以及第二连接构件60,包含第二电极80,其中第一连接构件和第二连接构件可以经由各向异性导电膜10彼此连接,所述各向异性导电膜10安置于第一连接构件50与第二连接构件60之间并且包含将第一电极70连接到第二电极80的导电粒子3,以将第一电极70连接到第二电极80,其中所述各向异性导电膜10可以是如上文所阐述的各向异性导电膜10。
随后,将详细描述本发明的实例以及比较例。然而,应理解,本发明不限于以下实例。
为清楚起见,将省略对所属领域的技术人员显而易知的细节描述。
虽然实例和比较例中制造的各向异性导电薄膜中的每一个是用于将玻璃衬底连接到典型的显示器面板的IC的各向异性导电膜并且具有含有导电粒子的导电层和介电层的双层结构,但应理解,本发明不限于此并且各向异性导电膜可以具有不同的层结构。
实例
实例1
-含有导电粒子的导电层
通过混合30重量%联二苯芴苯氧基树脂(FX-293,日本钢铁公司(Nippon SteelCorporation))、22.5重量%脂环族环氧化合物(Celloxide 2021P,大赛璐(DAICEL))、2.5重量%氧杂环丁烷化合物(OXT-221,东亚合成(TOAGOSEI))、5重量%季铵催化剂(CXC-1612,国王企业(KING INDUSTRY))、3重量%硅烷化合物(KBM-403,信越(SHINETSU))、2重量%氢氧化铝(Al(OH)2)(奥德里奇化学公司(ALDRICH CHEMICALS))、10重量%球状二氧化硅(Sciqas,酒井(SAKAI),平均粒子直径:0.4微米)以及25重量%经过绝缘处理的导电粒子(N2EJB,平均粒子直径:3微米,日本积水株式会社(Sekisui Co.,Ltd.,Japan))制备导电层组成物。
将导电层组成物涂布到离型膜上并且在60℃下在干燥器中干燥5分钟以使溶剂挥发,从而获得6微米厚的导电层。
-不含有导电粒子的介电层
除了不使用导电粒子以外,以与实例1相同的方式制备介电层组成物。将介电层组成物涂布到离型膜上并且在60℃下在干燥器中干燥5分钟以使溶剂挥发,从而获得12微米厚的介电层。
在40℃的温度下,在1兆帕的压力下,将导电膜层压在介电层上,从而获得具有双层结构的各向异性导电膜(厚度:18微米),其中介电层堆叠在导电层上。
在实例2到实例7和比较例1到比较例4中,以与实例1类似的方式制备具有双层结构的各向异性导电膜(厚度:18微米),其中介电层堆叠在导电层上。在实例和比较例中的每一个中,使用除了不包含导电粒子以外与导电层组成物相同的组成物制备介电层。因此,在实例2到实例7和比较例1到比较例4中,在下文中仅将描述含有导电粒子的导电层组成物之间的差异。
实例2到实例5
除了以总计25重量%的量使用脂环族环氧化合物(Celloxide 2021P,大赛璐)和氧杂环丁烷化合物(OXT-221,东亚合成)并且分别将脂环族环氧化合物与氧杂环丁烷化合物的重量比(在实例1中为9∶1)改变为7∶3(实例2)、5∶5(实例3)、3∶7(实例4)以及1∶9(实例5)以外,以与实例1相同的方式制备各向异性导电膜组成物,并且使用各别各向异性导电膜组成物获得各向异性导电膜。
实例6
除了将脂环族环氧化合物(Celloxide 2021P,大赛璐)和氧杂环丁烷化合物(OXT-221,东亚合成)的量分别改变为7.5重量%和7.5重量%并且使用10重量%苯酚酚醛环氧化合物(YDPN638,国都化工(KUKDO Chemical))以外,以与实例1相同的方式制备各向异性导电膜组成物,并且使用各向异性导电膜组成物获得各向异性导电膜。
实例7
除了将季铵催化剂(CXC-1612,国王工业)的量改变为4.8重量%并且使用0.2重量%由式27-1表示的化合物(SI-S,日本三信化工株式会社(Sanshin Chemical IndustryCo.,Ltd.,Japan))作为稳定剂以外,以与实例1相同的方式制备各向异性导电膜组成物,并且使用各向异性导电膜组成物获得各向异性导电膜。
[式27-1]
Figure BDA0001172733500000181
比较例1
除了使用锍阳离子催化剂(San-aid SI-60L,日本三信化工株式会社)替代季铵催化剂以外,以与实例3相同的方式制备各向异性导电膜组成物,并且使用各向异性导电膜组成物获得各向异性导电膜。
比较例2
除了使用锍阳离子催化剂(San-aid SI-60L,日本三信化工株式会社)替代季铵催化剂以外,以与实例6相同的方式制备各向异性导电膜组成物,并且使用各向异性导电膜组成物获得各向异性导电膜。
比较例3
除了不使用氧杂环丁烷化合物并且单独使用25重量%脂环族环氧化合物(Celloxide 2021P,大赛璐)作为可固化化合物以外,以与实例3相同的方式制备各向异性导电膜组成物,并且使用各向异性导电膜组成物获得各向异性导电膜。
比较例4
除了不使用脂环族环氧化合物并且单独使用25重量%氧杂环丁烷化合物(OXT-221,东亚合成)作为可固化化合物以外,以与实例3相同的方式制备各向异性导电膜组成物,并且使用各向异性导电膜组成物获得各向异性导电膜。
表1中示出了实例和比较例中使用的组分中的每一个的细节。
表1
Figure BDA0001172733500000191
实验实例1:计算各向异性导电膜的DSC热量变化率
以1毫克的量对实例1到实例6和比较例1到比较例4中制备的各向异性导电膜中的每一个进行取样,通过测量膜样品的卡路里,同时在-50℃到250℃的温度范围内,以10℃/分钟的加热速率,在氮气氛围下使用DSC(差示扫描量热计)(Q20,TA仪器)加热样品发现样品的初始热量(H0)和在40℃下静置24小时之后的热量(H1),继而根据方程式1计算各向异性导电膜的热量变化率:
热量变化率(%)=[(H0-H1)/H0]×100---(1)
实验实例2:在DSC上测量放热起始温度和放热峰值温度
使用差示扫描量热计(DSC)(Q20,TA仪器),同时在-50℃到250℃的温度范围内,以10℃/分钟的加热速率,在氮气氛围下加热各向异性导电膜,测量实例1到实例6和比较例1到比较例4中制备的各向异性导电膜中的每一个的DSC放热起始温度和放热峰值温度。在DSC图上,DSC放热起始温度定义为热量产生起始点与热量产生结束点之间的基线与最高峰的切线相接时到DSC图斜率由于DSC测量后热量产生而开始增加时的温度。DSC放热峰值温度定义为DSC图上热量的最高峰所处的温度。
实验实例3:测量初始凹痕均一性和可靠性后凹痕均一性
将实例和比较例中制备的各向异性导电膜中的每一个放置在包含凸起面积为1,200平方微米并且厚度为2,000埃的ITO电路的玻璃衬底(纽维科隆公司(Neoview Kolon,Inc.))上并且在70℃下在1兆帕下进行初步压缩1秒。接着,在去除离型膜之后,将凸起面积为1,200平方微米并且厚度为1.5T(三星(Samsung)LSI)的IC芯片放置在各向异性导电膜上,继而在130℃下在70兆帕下主要压缩5秒。接着,肉眼观测到凹痕的均一性。
另外,在85℃和85%RH下,将样本在高温和高湿度箱中静置500小时,继而肉眼观测凹痕均一性以评估可靠性。
具体地说,检查IC芯片的两个侧面的凹痕是否与其中心区域中的凹痕一样清晰。当凹痕为均一的并且第一行输出端线上的凹痕与第二行输出端线上的凹痕一样清晰时,此结果得分为5,并且当相比于其中心区域中的凹痕,IC芯片的两个侧面处的凹痕极不清楚或不可识别时,此结果得分为0。每个标准以0到5进行评分。
实验实例4:测量初始连接电阻和可靠性后连接电阻
将实例和比较例中制备的各向异性导电膜中的每一个放置在包含凸起面积为1,200平方微米并且厚度为2,000埃的ITO电路的玻璃衬底上并且在70℃和1.0兆帕下进行初步压缩1秒。接着,在去除离型膜之后,将凸起面积为1,200平方微米并且高度为15微米的IC芯片放置在各向异性导电膜上,继而在130℃下在70兆帕下主要压缩5秒,从而制备5个样本。
通过4点探针方法,使用具有4个探针的电阻计测量所制备样本中的每一个的4点之间的电阻值。此处,基于在通过电阻计施加1毫安电流后所测量到的电压计算电阻值,并且取平均值。
首先,测量样本的初始连接(T0)电阻。
接着,在85℃和85%RH下,将样本放置于高温和高湿度箱中500小时,继而以相同方式测量电阻,从而发现可靠性测试之后的连接电阻(T1)。
实验实例1到实验实例4的结果显示于表2中。
表2
Figure BDA0001172733500000211
如表2中所示,可见包含脂环族环氧化合物和氧杂环丁烷化合物以及季铵催化剂的实例1到实例6的各向异性导电膜具有低热量变化率和因此高储存稳定性,展现低DSC放热起始温度和低DSC放热峰值温度,并且提供其间相对较小的差异,从而在低温下实现快速固化。另外,在可靠性测试之后,实例1到实例6的各向异性导电膜在凹痕和连接电阻方面展现良好特性。

Claims (14)

1.一种各向异性导电膜,其特征在于,包括:就固体含量来说,按所述各向异性导电膜的总重量计,
20重量%到60重量%粘合剂树脂;
10重量%到40重量%包括脂环族环氧化合物以及氧杂环丁烷化合物的可固化化合物,所述脂环族环氧化合物与所述氧杂环丁烷化合物的重量比在1:9到9:1范围内;
1重量%到10重量%季铵催化剂;
5重量%到30重量%无机填充剂;以及
1重量%到20重量%导电粒子,
所述各向异性导电膜具有15%或小于15%的热量变化率,以差示扫描量热法所测量以及方程式1所计算:
热量变化率=[(H0-H1)/H0]×100---(1),
其中H0是所述各向异性导电膜以差示扫描量热法测定的热量,在25℃下以及0小时的时间点所测量,以及H1是所述各向异性导电膜以差示扫描量热法测定的热量,在40℃下静置24小时后所测量。
2.根据权利要求1所述的各向异性导电膜,其特征在于,所述脂环族环氧化合物是由式1到4表示的脂环族环氧化合物中的任一个:
[式1]
Figure FDA0002380235430000011
[式2]
Figure FDA0002380235430000012
[式3]
Figure FDA0002380235430000021
[式4]
Figure FDA0002380235430000022
其中n、s、t、u、v、m以及f各自独立地为1到50的整数,以及R是烷基、乙酰基、烷氧基或羰基。
3.根据权利要求1所述的各向异性导电膜,其特征在于,所述氧杂环丁烷化合物是每分子含有1到4个氧杂环丁烷环的碳聚合物化合物。
4.根据权利要求1所述的各向异性导电膜,其特征在于,所述季铵催化剂由式26表示:
[式26]
Figure FDA0002380235430000023
其中R11、R12、R13以及R14各自独立地为经取代或未经取代的C1到C6烷基以及C6到C20芳基中的一个,以及M是Cl-、BF4 -、PF6 -、N(CF3SO2)2-、CH3CO2 -、CF3CO2 -、CF3SO3 -、HSO4 -、SO4 2-、SbF6 -以及B(C6F5)4 -中的一个。
5.根据权利要求4所述的各向异性导电膜,其特征在于,M是SbF6 -或B(C6F5)4 -
6.根据权利要求1所述的各向异性导电膜,其特征在于,所述粘合剂树脂是聚酰亚胺树脂、聚酰胺树脂、苯氧基树脂、聚甲基丙烯酸酯树脂、聚丙烯树脂、聚氨基甲酸酯树脂、聚酯树脂、聚酯氨基甲酸酯树脂、聚乙烯醇缩丁醛树脂、苯乙烯-丁二烯-苯乙烯树脂以及其环氧化化合物、苯乙烯-乙烯/丁烯-苯乙烯树脂以及其经修饰的化合物、丙烯腈丁二烯橡胶以及其氢化化合物或者其组合。
7.根据权利要求6所述的各向异性导电膜,其特征在于,所述苯氧基树脂是芴苯氧基树脂。
8.根据权利要求1所述的各向异性导电膜,其特征在于,所述无机填充剂包含由以下中选出的至少一种:氧化铝、二氧化硅、二氧化钛、氧化锆、氧化镁、氧化铈、氧化锌、氧化铁、氮化硅、氮化钛、氮化硼、碳酸钙、硫酸铝、氢氧化铝、钛酸钙、滑石、硅酸钙以及硅酸镁。
9.根据权利要求1所述的各向异性导电膜,其特征在于,还包括:就固体含量来说,按所述各向异性导电膜的总重量计,超过0重量%到小于5重量%的量的稳定剂。
10.根据权利要求1所述的各向异性导电膜,其特征在于,还包括至少一种由以下所构成的族群中选出的可固化化合物:含有环氧基的倍半硅氧烷化合物、含有氧杂环丁烷基团的倍半硅氧烷化合物、苯酚酚醛环氧化合物以及甲酚酚醛环氧化合物。
11.根据权利要求1所述的各向异性导电膜,其特征在于,所述各向异性导电膜具有70℃到85℃的差示扫描量热法放热起始温度以及90℃到110℃的差示扫描量热法放热峰值温度。
12.根据权利要求1所述的各向异性导电膜,其特征在于,所述各向异性导电膜具有0.5欧姆或小于0.5欧姆的可靠性后连接电阻,如在50℃到90℃的温度下,在0.5兆帕到2兆帕的压力下初步压缩0.5到2秒,以及在100℃到150℃的温度下,在50兆帕到90兆帕的压力下主要压缩4到7秒,继而使所述各向异性导电膜在85℃以及85%RH下静置500小时之后所测量。
13.一种各向异性导电膜组成物,其特征在于,包括:就固体含量来说,按所述各向异性导电膜的总重量计,
20重量%到60重量%粘合剂树脂;
10重量%到40重量%包括脂环族环氧化合物以及氧杂环丁烷化合物的可固化化合物,所述脂环族环氧化合物与所述氧杂环丁烷化合物的重量比在1:9到9:1范围内;
1重量%到10重量%季铵催化剂;
5重量%到30重量%无机填充剂;以及
1重量%到20重量%导电粒子。
14.一种连接结构,其特征在于,包括:
第一连接构件,包括第一电极;
第二连接构件,包括第二电极;以及
各向异性导电膜,安置于所述第一连接构件与所述第二连接构件之间以将所述第一电极连接到所述第二电极,其中所述各向异性导电膜是根据权利要求1所述的各向异性导电膜或使用根据权利要求13所述的各向异性导电膜组成物制备的各向异性导电膜。
CN201611119253.6A 2015-12-07 2016-12-07 各向异性导电膜的组成物、各向异性导电膜以及使用所述各向异性导电膜的连接结构 Active CN107011813B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020150173398A KR101900544B1 (ko) 2015-12-07 2015-12-07 이방 도전성 필름용 조성물, 이방 도전성 필름 및 이를 이용한 접속 구조체
KR10-2015-0173398 2015-12-07

Publications (2)

Publication Number Publication Date
CN107011813A CN107011813A (zh) 2017-08-04
CN107011813B true CN107011813B (zh) 2020-09-01

Family

ID=58800565

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201611119253.6A Active CN107011813B (zh) 2015-12-07 2016-12-07 各向异性导电膜的组成物、各向异性导电膜以及使用所述各向异性导电膜的连接结构

Country Status (4)

Country Link
US (1) US10224303B2 (zh)
KR (1) KR101900544B1 (zh)
CN (1) CN107011813B (zh)
TW (1) TWI658114B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102624920B1 (ko) * 2016-02-22 2024-01-16 데쿠세리아루즈 가부시키가이샤 이방성 도전 필름
JP6776609B2 (ja) 2016-02-22 2020-10-28 デクセリアルズ株式会社 異方性導電フィルム
CN108130029A (zh) * 2017-12-22 2018-06-08 烟台德邦科技有限公司 一种uv延迟固化的导电银胶及其制备方法
CN109096227B (zh) * 2018-08-02 2022-07-08 江苏泰特尔新材料科技股份有限公司 一种己内酯改性3,4-环氧环己基甲基-3’,4’-环氧环己基甲酸酯及其制备方法
JP7264662B2 (ja) * 2019-02-13 2023-04-25 シーカ・ハマタイト株式会社 導電性組成物
JP2021001966A (ja) * 2019-06-21 2021-01-07 セイコーエプソン株式会社 電気光学装置、及び電子機器
CN110564337B (zh) * 2019-09-12 2021-06-29 天津伟景诺兰达科技有限公司 一种acf导电胶带及其制备工艺和应用
JPWO2022025207A1 (zh) * 2020-07-31 2022-02-03
WO2022092080A1 (ja) * 2020-10-30 2022-05-05 株式会社Adeka 重合性組成物、硬化物及び硬化物の製造方法
US20230357580A1 (en) * 2022-05-04 2023-11-09 Mk High Technology Joint Stock Company Anisotropic conductive film and method and composition for making the same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001207150A (ja) * 2000-01-26 2001-07-31 Sony Chem Corp 接着剤組成物
US20060110600A1 (en) * 2004-11-19 2006-05-25 3M Innovative Properties Company Anisotropic conductive adhesive composition
KR100662175B1 (ko) * 2004-12-31 2006-12-27 제일모직주식회사 옥세탄 화합물을 함유하는 이방 도전성 접착재료
US7785488B2 (en) * 2005-12-08 2010-08-31 Chisso Corporation Lateral oxirane compound and polymer thereof
KR101127098B1 (ko) * 2008-11-19 2012-03-23 제일모직주식회사 이방 전도성 접착필름용 조성물 및 이를 이용한 이방 전도성 필름
KR101403846B1 (ko) 2009-11-05 2014-06-03 히타치가세이가부시끼가이샤 열 중합계 개시제 시스템 및 접착제 조성물
JP5561199B2 (ja) 2011-02-17 2014-07-30 日立化成株式会社 接着剤組成物、回路接続材料、接続体及びその製造方法、並びに半導体装置
WO2013089100A1 (ja) * 2011-12-16 2013-06-20 株式会社スリーボンド 硬化性樹脂組成物
KR20150092077A (ko) 2012-12-06 2015-08-12 세키스이가가쿠 고교가부시키가이샤 도전 재료, 접속 구조체 및 접속 구조체의 제조 방법
KR101659128B1 (ko) * 2013-09-30 2016-09-22 제일모직주식회사 이방성 도전 필름 및 이를 이용한 반도체 장치
JP2015179732A (ja) * 2014-03-19 2015-10-08 デクセリアルズ株式会社 異方性導電接着剤
KR101706818B1 (ko) * 2014-04-30 2017-02-15 제일모직주식회사 이방 도전성 필름용 조성물, 이방 도전성 필름 및 반도체 장치

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Current-Induced Degradation of Isotropically;Stefan Kotthaus;《IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A》;19980630;第21卷(第2期);第259-265页 *

Also Published As

Publication number Publication date
CN107011813A (zh) 2017-08-04
TWI658114B (zh) 2019-05-01
KR101900544B1 (ko) 2018-09-19
US10224303B2 (en) 2019-03-05
KR20170067031A (ko) 2017-06-15
TW201720888A (zh) 2017-06-16
US20170162531A1 (en) 2017-06-08

Similar Documents

Publication Publication Date Title
CN107011813B (zh) 各向异性导电膜的组成物、各向异性导电膜以及使用所述各向异性导电膜的连接结构
TWI482793B (zh) 各向異性導電膜及半導體裝置
KR20110074320A (ko) 저온 속경화형 이방 전도성 필름용 조성물 및 이를 이용한 저온 속경화형 이방 전도성 필름
CN106189891B (zh) 各向异性导电膜和由其连接的半导体装置
CN108291121B (zh) 非等向性导电膜及使用其的连接结构
TWI649399B (zh) 非等向性導電膜用組成物、非等向性導電膜及使用其的顯示裝置
TWI623569B (zh) 各向異性導電膜和使用其的顯示裝置
KR101900542B1 (ko) 이방 도전성 필름용 조성물, 이방 도전성 필름 및 이를 이용한 디스플레이 장치
KR101731677B1 (ko) 이방 도전성 필름용 조성물, 이방 도전성 필름 및 반도체 장치
KR101908177B1 (ko) 이방 도전성 필름 및 이를 이용한 전자 장치
CN107338008B (zh) 各向异性导电膜及使用其的连接结构
KR101758430B1 (ko) 이방 도전성 필름 및 이를 이용한 반도체 장치
KR101665171B1 (ko) 이방 도전성 필름 및 상기 필름에 의해 접속된 반도체 장치
KR101908185B1 (ko) 이방 도전성 필름 및 이를 이용해 접속된 디스플레이 장치
CN107848283B (zh) 各向异性导电膜以及使用其的显示装置
KR20160038248A (ko) 에폭시 수지 조성물, 이방성 도전 필름용 조성물 및 반도체 장치
KR101780544B1 (ko) 접착 필름 및 이를 이용한 반도체 장치

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20191115

Address after: 61 jiashanwei Er Road, Jinchuan District, Seoul 08588, South Korea

Applicant after: GUKTOH CHEMICAL Co.,Ltd.

Address before: South Korea Gyeonggi Do Yongin Giheung tribute District Road No. 150-20

Applicant before: Samsung SDI Co.,Ltd.

GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20220920

Address after: Gyeonggi Do, South Korea

Patentee after: Guo Dujianduansucai

Address before: 61 jiashanwei Er Road, Jinchuan District, Seoul 08588, South Korea

Patentee before: GUKTOH CHEMICAL Co.,Ltd.