CN106189891B - 各向异性导电膜和由其连接的半导体装置 - Google Patents

各向异性导电膜和由其连接的半导体装置 Download PDF

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CN106189891B
CN106189891B CN201510315757.4A CN201510315757A CN106189891B CN 106189891 B CN106189891 B CN 106189891B CN 201510315757 A CN201510315757 A CN 201510315757A CN 106189891 B CN106189891 B CN 106189891B
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anisotropic conductive
conductive film
group
methylbenzyl
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CN106189891A (zh
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申颍株
姜炅求
金智软
朴憬修
朴永祐
孙秉勤
申炅勳
郑光珍
韩在善
黄慈英
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Guo Dujianduansucai
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GUKTOH CHEMICAL CO Ltd
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Abstract

本发明提供一种各向异性导电膜和由其连接的半导体装置。所述各向异性导电膜在25℃下储存170小时之后具有如由方程式1所表示的30％或小于30％的模数变化率，并且具有60℃到85℃的差示扫描热量计(differential scanning calorimeter，DSC)起始温度。[方程式1]弹性模数变化率(％)＝{(M1‑M0)/M0}×100其中M0是如在25℃下测量的所述各向异性导电膜的初始弹性模数(千克力/平方厘米)，并且M1是所述各向异性导电膜在25℃下单独静置170小时之后如在25℃下测量的所述膜的弹性模数(千克力/平方厘米)。

Description

各向异性导电膜和由其连接的半导体装置
技术领域
本发明涉及一种各向异性导电膜，其包含氢化环氧树脂、锍(sulfonium)阳离子聚合催化剂和锍稳定剂，以及由所述膜连接的半导体装置。
背景技术
近年来随着通过制造小型和高度功能性电子装置来减少组件的连接端子(connection terminal)之间的距离的趋势增加，越来越多地使用能够促进这类端子之间的连接的各种膜状粘结剂将IC芯片和柔性印刷电路(flexible printed circuit，FPC)板接合，将IC芯片和包含在其上形成的氧化铟锡(indium tin oxide，ITO)电极电路的玻璃衬底接合等。
在作为膜状粘结剂之一并且在树脂组成物中含有导电粒子的各向异性导电膜(anisotropic conductive film，ACF)中，通过加热和压制使树脂流体化以密封在连接目标上彼此面对的电极之间的间隙，同时电极之间的空隙经一些导电粒子填充，从而允许电极之间的电连接。在电子产品中广泛使用阳离子可聚合环氧树脂粘结剂来将电线和LCD板安装或附接到衬底。确切地说，应用于ACF的阳离子催化剂需要200℃或小于200℃的固化温度和24小时或大于24小时的储存稳定性。
尽管提议硼酸锍催化剂(日本专利公开案第2010-132614A号)作为用于环氧树脂固化的阳离子催化剂，但这种催化剂在环氧树脂溶液中具有1小时或小于1小时的低储存稳定性，并且因此需要改良储存稳定性。此外，尽管可以添加稳定剂以改良储存稳定性，但在固化之后稳定剂不向各向异性导电膜提供致密结构。因此，需要一种展示较高耐湿性和耐热性同时展示改良连接可靠性和膜特性的各向异性导电膜。
发明内容
本发明的一个方面是提供一种各向异性导电膜，其就储存稳定性、耐湿性、耐热性以及膜可成形性来说具有改良特性同时通过热固化保证低温快速固化。
本发明的另一方面是提供一种甚至在150℃或小于150℃的连接温度下允许连接并且展示极好的稳定性、粘结性以及可靠性的各向异性导电膜，一种制造其的方法，以及一种由其连接的半导体装置。
根据本发明的一个实施例，提供一种各向异性导电膜的组成物或一种各向异性导电膜，其包含：包含氢化环氧树脂的环氧树脂；由式1表示的阳离子聚合催化剂；以及由式2表示的化合物。
[式1]
Figure BDA0000734999790000021
其中R1到R5各是氢原子、烷基、乙酰基、烷氧羰基、苯甲酰基或苯甲氧羰基；并且R6和R7各是烷基、苯甲基、邻甲基苯甲基(o-methylbenzyl group)、间甲基苯甲基、对甲基苯甲基或萘甲基(naphthylmethyl group)。
[式2]
Figure BDA0000734999790000022
其中R8到R12各是氢原子、烷基、乙酰基、烷氧羰基、苯甲酰基或苯甲氧羰基；R13和R14各是烷基、苯甲基、邻甲基苯甲基、间甲基苯甲基、对甲基苯甲基或萘甲基；并且X1是卤素原子或烷基硫酸。
根据本发明的另一实施例，提供一种各向异性导电膜，其在25℃下储存170小时之后具有如由方程式1所表示的30％或小于30％的弹性模数变化率，并且具有60℃到85℃的差示扫描热量计(differential scanning calorimeter，DSC)起始温度。
[方程式1]
弹性模数变化率(％)＝{(M1-M0)/M0}×100
其中M0是如在25℃下测量的所述各向异性导电膜的初始弹性模数(千克力/平方厘米)，并且M1是所述各向异性导电膜在25℃下单独静置170小时之后如在25℃下测量的所述膜的弹性模数(千克力/平方厘米)。具体而言，弹性模数变化为1％或大于1％至30％或小于30％。
根据本发明的另一实施例，提供一种包含以下各个的半导体装置：具有第一电极的第一连接部件；具有第二电极的第二连接部件；以及安置在第一连接部件和第二连接部件之间以连接第一电极和第二电极的各向异性导电膜。
根据本发明的实施例，各向异性导电膜就储存稳定性、耐湿性、耐热性以及膜特性来说展示改良特性同时保证低温快速固化，从而提供极好粘结性和连接可靠性的优势。
附图说明
图1是根据本发明的一个实施例的半导体装置30的剖视图，其包含具有第一电极70的第一连接部件50、具有第二电极80的第二连接部件60以及由安置在第一连接部件和第二连接部件之间以经由导电粒子3连接第一电极和第二电极的各向异性导电膜形成的粘结层10。
具体实施方式
本发明的一个实施例涉及一种各向异性导电膜的组成物或一种各向异性导电膜，其包含：包含氢化环氧树脂的环氧树脂；由式1表示的阳离子聚合催化剂；以及由式2表示的化合物。本发明的另一实施例涉及一种各向异性导电膜的组成物或一种各向异性导电膜，除如上文所阐述的组分外其还包含粘合剂树脂。
[式1]
Figure BDA0000734999790000031
其中R1到R5各是氢原子、烷基、乙酰基、烷氧羰基、苯甲酰基或苯甲氧羰基；并且R6和R7各是烷基、苯甲基、邻甲基苯甲基、间甲基苯甲基、对甲基苯甲基或萘甲基。
[式2]
Figure BDA0000734999790000041
其中R8到R12各是氢原子、烷基、乙酰基、烷氧羰基、苯甲酰基或苯甲氧羰基；R13和R14各是烷基、苯甲基、邻甲基苯甲基、间甲基苯甲基、对甲基苯甲基或萘甲基；并且X1是卤素原子或烷基硫酸。
根据本发明，氢化环氧树脂特别包含氢化双酚A型环氧树脂和脂环族氢化环氧树脂，例如环脂肪族(cycloaliphatic)环氧树脂。环脂肪族环氧树脂可以是具有结构的树脂，例如脂环族二环氧乙缩醛(alicyclic diepoxy acetal)、脂环族二环氧己二酸酯(alicyclic diepoxy adipate)、脂环族二环氧羧酸酯(alicyclic diepoxycarboxylate)、二氧化乙烯环己烯(vinyl cyclohexene dioxide)等。
氢化双酚A型环氧树脂一般使用氢化双酚A衍生物和表氯醇(epichlorohydrin)获得，并且可以具有其中双酚A分子中的双键经氢分子取代的结构。
举例来说，氢化双酚A型环氧树脂可以包含由式3表示的氢化双酚A型环氧树脂单体或由式4表示的氢化双酚A型环氧树脂寡聚物。
[式3]
Figure BDA0000734999790000042
[式4]
Figure BDA0000734999790000043
其中n在0.1到13范围内。
氢化环氧树脂可以具有150克/当量到1,200克/当量的环氧当量重量和900厘泊/25℃到12,000厘泊/25℃的粘度。
就固体含量来说，以各向异性导电组成物的总重量计，氢化环氧树脂可以5重量％(wt％)到25重量％的量存在。此外，以100重量份环氧树脂计，氢化环氧树脂可以30重量份到60重量份，具体来说，35重量份到55重量份的量存在。在这个范围内，就膜特性、耐湿性、耐热性以及可靠性来说，各向异性导电膜可以具有优势。具体来说，如果以100重量份环氧树脂计，氢化环氧树脂的量大于60重量份，那么由于其膜特性的劣化在初始阶段和在可靠性评估之后各向异性导电膜可以展示增加的连接电阻。
根据本发明，可以另外使用除氢化环氧树脂之外的另一环氧树脂。环氧树脂可以包含(但不限于)至少一种由以下所构成的族群中选出的环氧树脂：双酚型环氧树脂、酚醛型环氧树脂、缩水甘油基型(glycidyl type)环氧树脂、脂肪族环氧树脂、脂环族环氧树脂以及芳香族环氧树脂。
根据本发明，可以使用由式1表示的阳离子聚合催化剂。
[式1]
Figure BDA0000734999790000051
其中R1到R5各是氢原子、烷基、乙酰基、烷氧羰基、苯甲酰基或苯甲氧羰基；并且R6和R7各是烷基、苯甲基、邻甲基苯甲基、间甲基苯甲基、对甲基苯甲基或萘甲基。具体来说，R1到R5可以各是氢原子或烷基，并且R6和R7可以各是烷基、苯甲基、邻甲基苯甲基、间甲基苯甲基、对甲基苯甲基或萘甲基。更具体来说，R1到R5可以各是氢原子，并且R6和R7可以各是烷基、苯甲基、邻甲基苯甲基、间甲基苯甲基、对甲基苯甲基或萘甲基。由式1表示的阳离子聚合催化剂可以防止大量氟离子在阳离子聚合时排放，并且因此防止金属线、连接垫等的腐蚀。此外，由式1表示的阳离子聚合催化剂在较低温度下产生阳离子，并且因此允许各向异性导电膜在例如150℃或低于150℃，具体来说140℃或低于140℃，更具体来说130℃或低于130℃的低温下快速固化。
以100重量份氢化环氧树脂计，由式1表示的阳离子聚合催化剂可以5重量份到30重量份，具体来说10重量份到25重量份的量存在。在这个范围内，就储存稳定性和低温快速固化来说，各向异性导电膜可以具有优势。
根据本发明，可以使用由式2表示的化合物。
[式2]
Figure BDA0000734999790000061
其中R8到R12各是氢原子、烷基、乙酰基、烷氧羰基、苯甲酰基或苯甲氧羰基；R13和R14各是烷基、苯甲基、邻甲基苯甲基、间甲基苯甲基、对甲基苯甲基或萘甲基；并且X1是卤素原子或烷基硫酸。
具体来说，R8到R12可以各是氢原子或烷基，并且R13和R14可以各是烷基、苯甲基、邻甲基苯甲基、间甲基苯甲基、对甲基苯甲基或萘甲基。更具体来说，R8到R12可以各是氢原子，R13和R14可以各是烷基、苯甲基、邻甲基苯甲基、间甲基苯甲基、对甲基苯甲基或萘甲基，并且X1可以是烷基硫酸。归因于由式1表示的聚合催化剂所产生的阳离子，各向异性导电膜甚至在室温下可以固化，并且因此遭受储存稳定性劣化。由式2表示的化合物通过捕捉由式1表示的聚合催化剂所产生的阳离子来抑制各向异性导电膜在室温下固化，并且因此促成各向异性导电膜的储存稳定性改良。
以100重量份由式1表示的聚合催化剂计，由式2表示的化合物可以0.1重量份到30重量份，具体来说3重量份到10重量份的量存在。在这个范围内，各向异性导电膜可以在不抑制其低温快速固化的情况下展示改良储存稳定性。
根据本发明的实施例的各向异性导电组成物或各向异性导电膜包含由式1表示的阳离子聚合催化剂和由式2表示的化合物，并且因此可以在低温下固化并且展示改良的储存稳定性和连接可靠性。
本发明的另一实施例涉及一种各向异性导电膜的组成物或一种各向异性导电膜，除如上文所阐述的组分外其还包含粘合剂树脂。粘合剂树脂的实例可以包含聚酰亚胺树脂、聚酰胺树脂、苯氧基树脂、环氧树脂、聚甲基丙烯酸酯树脂、聚丙烯酸酯树脂、聚氨基甲酸酯树脂、丙烯酸酯改性的氨基甲酸酯树脂、聚酯树脂、聚酯氨基甲酸酯树脂、聚乙烯缩丁醛(polyvinyl butyral)树脂、苯乙烯-丁烯-苯乙烯(styrene-butylene-styrene，SBS)树脂和其环氧化改性物、苯乙烯-乙烯-丁烯-苯乙烯(styrene-ethylene-butylene-styrene，SEBS)树脂和其改性物、丙烯腈丁二烯橡胶(acrylonitrile butadiene rubber，NBR)或其氢化化合物等。这些可以单独使用或以其组合形式使用。尽管较高重量平均分子量的粘合剂树脂准许较容易地成膜，但本发明不限于特定重量平均分子量的粘合剂树脂。举例来说，粘合剂树脂可能具有具体来说5,000克/摩尔到150,000克/摩尔，更具体来说10,000克/摩尔到80,000克/摩尔的重量平均分子量。如果粘合剂树脂的重量平均分子量小于5,000克/摩尔，那么成膜可能受抑制，并且如果粘合剂树脂的重量平均分子量大于150,000克/摩尔，那么可能存在与其它组分的相容性不佳的问题。此外，以100重量份各向异性导电膜的组成物计，粘合剂树脂可以20重量份到60重量份，具体来说，30重量份到50重量份的量存在。
根据本发明的另一实施例，提供一种各向异性导电膜的组成物或一种各向异性导电膜，除如上文所阐述的组分外其还包含导电粒子。举例来说，导电粒子可以包含：包含Au、Ag、Ni、Cu以及Pb的金属粒子；碳粒子；通过用金属涂布聚合物树脂获得的粒子；通过将用金属涂布聚合物树脂获得的粒子的表面绝缘处理获得的粒子等。聚合物树脂包含(但不限于)聚乙烯、聚丙烯、聚酯、聚苯乙烯以及聚乙烯醇。涂布聚合物树脂的金属包含(但不限于)Au、Ag、Ni、Cu以及Pb。
具体来说，在外部引线接合(outer lead bonding，OLB)的情况下，因为粘着物是氧化铟锡(ITO)玻璃表面，所以可以使用包含由塑料组分制成的核的导电粒子来防止在各向异性导电膜连接过程中产生的压力对ITO的损害。在连接PCB衬底的情况下，可以使用金属粒子，例如Ni粒子。在等离子显示板(plasma display panel，PDP)的情况下，由于应用到电路的极高压，可以使用通过用金(Au)电镀金属粒子(例如Ni粒子)而获得的导电粒子。在玻璃芯片(chip on glass，COG)或窄间距膜芯片(chip on film，COF)的情况下，可以使用通过用热塑性树脂覆盖导电粒子表面而获得的绝缘导电粒子。在一个实施例中，根据本发明的各向异性导电膜的组成物或各向异性导电膜可能适用于COG接合。
取决于所应用的电路的间距和目的，导电粒子的尺寸经测定在1微米到30微米，优选3微米到20微米的范围内。就固体含量来说，以各向异性导电膜的组成物的总重量计，导电粒子可以1重量％到30重量％，具体来说1重量％到15重量％的量存在。在这个范围内，各向异性导电膜可以保证稳定连接可靠性，并且防止在热压制时由间距之间的导电粒子的聚集(agglomeration)引起的电短路。
根据本发明的又一实施例，各向异性导电膜的组成物或各向异性导电膜除如上文所阐述的组分外可以还包含硅烷偶合剂。
硅烷偶合剂可以包含(但不限于)至少一种由以下所构成的族群中选出的物质：可聚合含氟基的硅化合物，例如乙烯基三甲氧基硅烷、乙烯基三乙氧基硅烷(vinyltriethoxysilane)以及(甲基)丙烯酰氧基丙基三甲氧基硅烷((meth)acryloxypropyltrimethoxysilane)；环氧基化硅化合物，例如3-缩水甘油氧基丙基三甲氧基硅烷(3-glycidoxypropyltrimethoxysilane)、3-缩水甘油氧基丙基甲基二甲氧基硅烷(3-glycidoxypropylmethyldimethoxysilane)以及2-(3,4-环氧环己基)乙基三甲氧基硅烷(2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane)；含氨基的硅化合物，例如3-氨基丙基三甲氧基硅烷(3-aminopropyltrimethoxysilane)、N-(2-氨基乙基)-3-氨基丙基三甲氧基硅烷(N-(2-aminoethyl)-3-aminopropyltrimethoxysilane)以及N-(2-氨基乙基)-3-氨基丙基甲基二甲氧基硅烷(N-(2-aminoethyl)-3-aminopropylmethyldimethoxysilane)；以及3-氯丙基三甲氧基硅烷(3-chloropropyltrimethoxysilane)。
就固体含量来说，以各向异性导电膜的组成物的总重量计，硅烷偶合剂可以1重量％到10重量％的量存在。
根据本发明的又一实施例，各向异性导电膜可以还包含添加剂，例如聚合抑制剂、抗氧化剂以及热稳定剂，以在其基本特性不劣化的情况下展示额外特性。就固体含量来说，添加剂可以(但不限于)0.01重量％到10重量％的量存在于各向异性导电膜的组成物中。
聚合抑制剂的实例可以包含氢醌、氢醌单甲醚(hydroquinone monomethylether)、对苯醌、吩噻嗪以及其混合物。抗氧化剂可以包含酚类(phenolic)化合物、羟基肉桂酸酯(hydroxycinnamate)化合物等。抗氧化剂的实例可以包含四-(亚甲基-(3,5-二-叔丁基-4-羟基肉桂酸酯)甲烷(tetrakis-(methylene-(3,5-di-t-butyl-4-hydroxycinnamate)methane)、3,5-双(1,1-二甲基乙基)-4-羟基苯丙酸巯基二-2,1-乙烷二酯(3,5-bis(1,1-dimethylethyl)-4-hydroxybenzenepropanoic acid thioldi-2,1-ethanediyl ester)等。
根据本发明，各向异性导电膜可以包含由各向异性导电膜的组成物形成的各向异性导电粘结层，和离型膜。在将各向异性导电膜初步压制到第一连接部件或第二连接部件时可以移除离型膜。因此，各向异性导电膜和各向异性导电粘结层可以在本文中相容地使用。
根据本发明，各向异性导电膜可能具有：包含一个各向异性导电粘结层的单层结构；其中不含有导电粒子的不导电粘结层和含有导电粒子的导电粘结层依序堆叠的双层结构；或不导电粘结层堆叠于导电粘结层的两个表面上的三层结构。本文所公开的各向异性导电膜的组成物可以用于不导电粘结层、导电粘结层或不导电粘结层和导电粘结层两个。
本发明的又一实施例涉及一种各向异性导电膜，其在25℃下储存170小时之后具有如由方程式1所表示的30％或小于30％的弹性模数变化率，并且具有60℃到85℃的差示扫描热量计(DSC)起始温度。
[方程式1]
模数变化率(％)＝{(M1-M0)/M0}×100
其中M0是如在25℃下测量的所述各向异性导电膜的初始弹性模数(千克力/平方厘米)，并且M1是所述各向异性导电膜在25℃下单独静置170小时之后如在25℃下测量的所述膜的弹性模数(千克力/平方厘米)。
30％或小于30％的弹性模数变化率与各向异性导电膜的储存稳定性改良相关联，并且60℃到85℃的DSC起始温度与其低温快速固化特性相关联。如本文所用，DSC起始温度是指在使用DSC测量各向异性导电膜的热量以及温度变化时，归因于放热反应，DSC曲线的斜率首次增加的时间点下的温度。各向异性导电膜的初始弹性模数M0可以是100千克力/平方厘米到1200千克力/平方厘米，具体来说250千克力/平方厘米到750千克力/平方厘米。在这个初始弹性模数范围内，各向异性导电膜可以展示改良的膜特性。
根据本发明的实施例，各向异性导电膜如上所述可以包含环氧树脂，其包含氢化环氧树脂；由式1表示的阳离子聚合催化剂以及由式2表示的化合物，并且可以还包含粘合剂树脂或导电粒子。因此，细节(例如氢化环氧树脂、由式1表示的阳离子聚合催化剂以及由式2表示的化合物的量和类型)也可以适用于本发明的这些实施例。此外，根据实施例的各向异性导电膜可以具有10倍到60倍的连接电阻增加比率，如由方程式2表示：
[方程式2]
连接电阻增加比率＝T1/T0
其中T0是如在各向异性导电膜在150℃和70兆帕下经受压制5秒之后测量的连接电阻，并且T1是如在各向异性导电膜在85℃和85％RH下单独静置500小时之后测量的连接电阻。
本发明的又一实施例涉及一种包含以下各个的半导体装置：具有第一电极的第一连接部件；具有第二电极的第二连接部件；以及本文所公开并且安置在第一连接部件和第二连接部件之间以连接第一电极和第二电极的各向异性导电膜。
第一连接部件和第二连接部件各包含需要电连接的电极。具体来说，第一连接部件和第二连接部件可以包含玻璃衬底、塑料衬底、印刷电路板、陶瓷电路板、柔性电路板、半导体硅芯片、IC芯片、驱动器IC芯片等，其上形成有电极，例如氧化铟锡(ITO)和氧化铟锌(indium zinc oxide，IZO)。更具体来说，第一连接部件和第二连接部件中的一个可以是IC芯片或驱动器IC芯片，并且另一个可以是玻璃衬底。
参考图1，在半导体装置30中，具有第一电极70的第一连接部件50和具有第二电极80的第二连接部件60可以借助安置在第一连接部件和第二连接部件之间以连接第一电极和第二电极的根据本发明实施例的各向异性导电层彼此接合。
本发明提供一种由各向异性导电膜组成物形成的各向异性导电膜。不需要特别设备或装备来形成各向异性导电膜。举例来说，包含各向异性导电粘结层和离型膜的各向异性导电膜可以通过以下方式获得：将根据本发明的各向异性导电组成物溶解于有机溶剂(例如甲苯)中，在防止导电粒子粉碎的速度下以预定时间段搅拌所获得的溶液，将溶液以某一厚度(例如10微米到50微米的厚度)涂布到离型膜上，并且以预定时间段干燥溶液以蒸发甲苯等。
离型膜可以包含例如聚烯烃膜，例如聚乙烯、聚丙烯、乙烯/丙烯共聚物、聚丁烯-1、乙烯/乙酸乙烯酯共聚物、聚乙烯/苯乙烯丁二烯橡胶的混合物、聚氯乙烯等。此外，离型膜可以包含：聚合物，例如聚对苯二甲酸乙二酯、聚碳酸酯、聚(甲基丙烯酸甲酯)等；热塑性弹性体，例如聚氨基甲酸酯、聚酰胺-多元醇(polyamide-polyol)共聚物等；以及其混合物。离型膜可以具有任何适合厚度。举例来说，离型膜的厚度可以是10微米到50微米。
随后，将参考一些实例更详细地描述本发明。应理解提供这些实例仅为了说明，并且不应以任何方式解释为限制本发明。
为清楚起见，将省略对本领域的技术人员显而易见的细节描述。
实例1：制造各向异性导电膜
将35重量％粘合剂(YP50，国都化学株式会社(Kukdo Chemical Co.,Ltd.))、20重量％氢化环氧树脂(ST-3000，国都化学株式会社)、20.8重量％环氧丙烷系环氧树脂(EP-4000S，艾迪科株式会社(Adeka Co.,Ltd.))、4重量％固化催化剂(SI-B3A，三信化学株式会社(Sanshin Chemical Co.,Ltd.))、0.2重量％稳定剂(SI-S，三信化学株式会社)、20重量％导电粒子(AUL704F，积水株式会社(Sekisui Co.,Ltd.))以及作为溶剂的丙二醇单甲醚乙酸酯(propylene glycol monomethyl ether acetate，PGMEA)混合。将所获得的混合液体涂布到离型膜上，随后在干燥器中在60℃下干燥以使溶剂挥发，从而获得各向异性导电膜(涂层厚度：10微米)。
实例2：制造各向异性导电膜
以与实例1中相同的方式制造各向异性导电膜，但其中改为使用SI-B2A(三信化学株式会社)代替SI-B3A作为固化催化剂。
实例3：制造各向异性导电膜
以与实例1中相同的方式制造各向异性导电膜，但其中改为使用S-ME(三信化学株式会社)代替SI-S作为稳定剂。
比较例1：制造各向异性导电膜
以与实例1中相同的方式制造各向异性导电膜，但其中改为使用缩水甘油胺型(glycidyl amine-type)环氧树脂(SE-300P，西纳T和C有限公司(SHINA T&C Co.,Ltd.))代替ST-3000的氢化环氧树脂。
比较例2：制造各向异性导电膜
以与实例1中相同的方式制造各向异性导电膜，但其中改为不使用稳定剂并且以4.2重量％的量使用固化催化剂。
比较例3：制造各向异性导电膜
以与实例1中相同的方式制造各向异性导电膜，但其中改为使用亚甲基双(methylenebis)(苯胺)(MDA-220，国都化学株式会社)代替SI-S作为稳定剂。
实验实例：各向异性导电膜的特性评估
使用关于DSC起始温度、在25℃下170小时之后的弹性模数变化率、连接电阻以及在可靠性评估之后的连接电阻的以下方法评估在实例1到实例3和比较例1到比较例3中制造的每一各向异性导电膜中。结果显示于表1中。
DSC起始温度
DSC起始温度定义为在使用差示扫描式热量计型号Q20(TA仪器(TAInstruments))以10℃/分钟的速率在0℃到300℃的温度范围内在氮气环境下测量各向异性导电膜粘结层的热量时，归因于产热，DSC曲线的斜率首次增加的时间点下的温度。
在25℃下170小时之后的弹性模数变化率
通过使用UTM设备在室温(25℃)下以5毫米/分钟的速度在两末端以180°方向拉动来测量尺寸是2毫米×10毫米×10微米(宽度×长度×厚度)的各向异性导电膜的粘结层在25℃下的初始弹性模数(M0)。此处，使用100牛顿UTM夹具进行测量，并由最大应力的一半的点的斜率来计算初始弹性模数，即，(最大应力的一半应力值-初始应力值)/(最大应力的一半的点的应变值)。随后，在膜于25℃下静置170小时之后以上述相同方法测量在25℃下的弹性模数(M1)。随后，以百分比形式计算在170小时之后相对于初始弹性模数的弹性模数变化率。
连接电阻和在可靠性评估之后的连接电阻
为了评估各向异性导电膜的连接电阻，将包含具有1200平方微米的凸块区域和2000埃的厚度的氧化铟锡(ITO)电路的玻璃衬底和具有1200平方微米的凸块区域和1.5毫米的厚度的IC芯片放置在各向异性导电膜的上表面和下表面上，随后在150℃和70兆帕的条件下压制并且加热5秒，从而每个样品制造5个样本。测量各样本中的初始连接电阻(T0)。
此外，针对可靠性评估，将电路连接产品在85℃和85％RH下于高温高湿度箱中静置500小时，随后以与上述相同的方式测量在可靠性评估之后的连接电阻(T1)。
使用电阻测试仪型号2000万用表(multimeter)(吉时利有限公司(Keithley Co.,Ltd.))通过4点探针法(4-point probe method)测量连接电阻，其中使用与测试仪(ASTMF43-64T)连接的四个探针测量四点之间的电阻。使用通过应用1毫安的测试电流测量的电压来计算电阻，其又展现在测试仪上。
表1
Figure BDA0000734999790000131
(X表示连接失败)
如表1中所示，实例1到实例3的各向异性导电膜的DSC起始温度是60℃到85℃并且因此允许在低温下固化。此外，实例1到实例3的各向异性导电膜在初始阶段和在可靠性评估之后当在低温快速固化条件下经受初步和主要压制时展示极好的连接电阻，并且展示极好的储存稳定性，因为固化反应由于在25℃下170小时之后的小于30％的弹性模数变化率而未出现。另一方面，未使用氢化环氧树脂的比较例1的各向异性导电膜在可靠性评估之后在低温快速固化条件下初步并且主要压制时连接失败。此外，不含有稳定剂的比较例2的各向异性导电膜展示储存稳定性劣化。另外，对于比较例3的各向异性导电膜来说，认为因阳离子聚合催化剂产生的路易斯酸(Lewis acid)所致的环氧树脂的聚合延迟，归因于具有未共享电子对(例如N和O)的化合物与阳离子聚合催化剂的反应。因此，比较例3的各向异性导电膜在初始阶段展示不佳的连接电阻和在可靠性评估之后在低温接合时连接失败。

Claims (7)

1.一种各向异性导电膜，其在25℃下储存170小时之后具有如由方程式1所表示的30％或小于30％的模数变化率以及具有60℃到85℃的差示扫描热量计起始温度，
[方程式1]
弹性模数变化率(％)＝{(M1-M0)/M0}×100
其中M0是如在25℃下测量的所述各向异性导电膜的初始弹性模数，以及M1是所述各向异性导电膜在25℃下单独静置170小时之后如在25℃下测量的所述各向异性导电膜的弹性模数，
其中所述各向异性导电膜包括：包括氢化环氧树脂的环氧树脂；由式1表示的阳离子聚合催化剂；以及由式2表示的化合物，
[式1]
Figure FDA0002202147800000011
其中R1到R5各是氢原子、烷基、乙酰基、烷氧羰基、苯甲酰基或苯甲氧羰基；以及R6以及R7各是烷基、苯甲基、邻甲基苯甲基、间甲基苯甲基、对甲基苯甲基或萘甲基，
[式2]
Figure FDA0002202147800000012
其中R8到R12各是氢原子、烷基、乙酰基、烷氧羰基、苯甲酰基或苯甲氧羰基；R13以及R14各是烷基、苯甲基、邻甲基苯甲基、间甲基苯甲基、对甲基苯甲基或萘甲基；以及X1是卤素原子或烷基硫酸，
其中以100重量份所述环氧树脂计，所述氢化环氧树脂以30重量份到60重量份的量存在，
其中所述各向异性导电膜还包括粘合剂树脂以及导电粒子，
其中所述各向异性导电膜包括：
就固体含量来说以所述各向异性导电膜的组成物的总重量计，20重量％到50重量％所述环氧树脂；
以100重量份所述环氧树脂计，30重量份到60重量份所述氢化环氧树脂；
以100重量份所述氢化环氧树脂计，5重量份到30重量份由式1表示的所述阳离子聚合催化剂；
以100重量份由式1表示的所述阳离子聚合催化剂计，0.1重量份到30重量份由式2表示的所述化合物；
25重量％到60重量％所述粘合剂树脂；以及
1重量％到30重量％所述导电粒子。
2.根据权利要求1所述的各向异性导电膜，其中R1到R5各是氢原子，以及R6以及R7各是烷基、苯甲基、邻甲基苯甲基、间甲基苯甲基、对甲基苯甲基或萘甲基。
3.根据权利要求1所述的各向异性导电膜，其中R8到R12各是氢原子，R13以及R14各是烷基、苯甲基、邻甲基苯甲基、间甲基苯甲基、对甲基苯甲基或萘甲基；以及X1是烷基硫酸。
4.根据权利要求1到3中任一项所述的各向异性导电膜，其中所述氢化环氧树脂是由式3表示的氢化双酚A型环氧树脂单体或由式4表示的氢化双酚A型环氧树脂寡聚物，
[式3]
Figure FDA0002202147800000021
[式4]
Figure FDA0002202147800000022
其中n在0.1到13范围内。
5.根据权利要求1到3中任一项所述的各向异性导电膜，其中所述各向异性导电膜的初始弹性模数M0是100千克力/平方厘米到1200千克力/平方厘米。
6.一种半导体装置，包括：
第一连接部件，具有第一电极；
第二连接部件，具有第二电极；以及
根据权利要求1到3中任一项所述的各向异性导电膜，安置在所述第一连接部件以及所述第二连接部件之间以连接所述第一电极以及所述第二电极。
7.根据权利要求6所述的半导体装置，其中所述第一连接部件以及所述第二连接部件中的一个包括IC芯片，以及另一个包括玻璃衬底。
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013093315A (ja) * 2011-10-03 2013-05-16 Sekisui Chem Co Ltd 異方性導電材料及び接続構造体
CN103160219A (zh) * 2011-12-14 2013-06-19 第一毛织株式会社 各向异性导电膜组合物、各向异性导电膜和半导体装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7604868B2 (en) * 1997-03-31 2009-10-20 Hitachi Chemical Company, Ltd. Electronic circuit including circuit-connecting material
US6699351B2 (en) * 2000-03-24 2004-03-02 3M Innovative Properties Company Anisotropically conductive adhesive composition and anisotropically conductive adhesive film formed from it
JP2003082318A (ja) 2001-09-13 2003-03-19 Three M Innovative Properties Co カチオン重合性接着剤組成物及び異方導電性接着剤組成物
CN100380741C (zh) * 2003-06-25 2008-04-09 日立化成工业株式会社 电路连接材料、电路构件的连接结构及其制造方法
MY150038A (en) * 2007-09-19 2013-11-29 Toray Industries Adhesive composition for electronic components, and adhesive sheet for electronic components using the same
KR100920612B1 (ko) * 2007-11-08 2009-10-08 제일모직주식회사 이방 전도성 필름용 조성물 및 이를 이용한 이방 전도성필름
KR100891414B1 (ko) 2007-11-20 2009-04-02 제일모직주식회사 저장안정성이 개선된 이방 도전성 필름용 조성물
JP5444702B2 (ja) 2008-12-05 2014-03-19 デクセリアルズ株式会社 新規なスルホニウムボレート錯体
JP5768454B2 (ja) 2011-04-14 2015-08-26 デクセリアルズ株式会社 異方性導電フィルム
KR101391696B1 (ko) * 2011-11-23 2014-05-07 제일모직주식회사 이방 전도성 조성물 및 필름
KR101355855B1 (ko) * 2011-12-19 2014-01-29 제일모직주식회사 이방성 도전 필름
KR101551758B1 (ko) * 2012-12-11 2015-09-09 제일모직주식회사 이방 도전성 필름용 조성물 및 이방 도전성 필름

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013093315A (ja) * 2011-10-03 2013-05-16 Sekisui Chem Co Ltd 異方性導電材料及び接続構造体
CN103160219A (zh) * 2011-12-14 2013-06-19 第一毛织株式会社 各向异性导电膜组合物、各向异性导电膜和半导体装置

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